Quartz ceramic crucible and single crystal furnace
By using a quartz ceramic crucible in a single crystal furnace, especially with a ceramic layer made of aluminosilicate fiber, the reaction between the crucible and the molten silicon is prevented, the oxygen content is reduced, the quality of the silicon rod is improved, and the service life of the crucible is extended.
Patent Information
- Application Number
- CN202422423296.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-08
- Publication Date
- 2026-01-02
- Estimated Expiration
- 2034-10-08
AI Technical Summary
In existing technologies, the oxygen content in the crucible within the main body of a single-crystal furnace is too high during the preparation of single-crystal silicon, which affects the quality of the silicon rod.
The quartz ceramic crucible consists of an outer layer and a ceramic layer. The outer layer is composed of an opaque layer and a vacuum transparent layer. The ceramic layer is made of aluminum silicate fiber, which prevents the crucible from reacting with the molten silicon, reduces the oxygen content, and forms dense, tiny cristobalite crystals on the inside of the crucible to improve its service life.
It effectively reduced the oxygen content, improved the quality of the silicon rod, and significantly extended the service life of the crucible.
Smart Images
Figure CN223752953U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to monocrystalline silicon preparation technical field, specifically a quartz ceramic crucible and single crystal furnace. BACKGROUND
[0002] With the continuous development of world economy, the demand for efficient energy is growing in modernization construction. As a kind of green energy and the main energy of human sustainable development, photovoltaic power generation is increasingly valued and developed by countries around the world. Monocrystalline silicon wafer, as a kind of basic material for photovoltaic power generation, has a wide market demand.
[0003] The oxygen content in the crucible in the main body of the prior art single crystal furnace is too high during the preparation of monocrystalline silicon, which affects the quality of the silicon rod. In order to solve this technical problem, a quartz ceramic crucible and single crystal furnace are proposed. SUMMARY
[0004] One of the technical problems to be solved by the present disclosure is that the oxygen content in the crucible in the main body of the prior art single crystal furnace is too high during the preparation of monocrystalline silicon, which affects the quality of the silicon rod.
[0005] To solve the above technical problems, the present disclosure provides a quartz ceramic crucible and single crystal furnace.
[0006] To achieve the above purpose, the utility model provides the following technical scheme:
[0007] A quartz ceramic crucible comprises an outer layer and a ceramic layer arranged on the inner wall of the outer layer.
[0008] In some embodiments, the outer layer comprises an opaque layer and a vacuum transparent layer arranged on the inner wall of the opaque layer; the ceramic layer is arranged on the inner wall of the vacuum transparent layer.
[0009] In some embodiments, the main component of the ceramic layer is aluminum silicate fiber.
[0010] The utility model provides the following another technical scheme:
[0011] A single crystal furnace comprises a single crystal furnace body, a flow guide cylinder, a water-cooled screen, a heater and a quartz ceramic crucible arranged inside the single crystal furnace body; the water-cooled screen is arranged inside the flow guide cylinder, and the quartz ceramic crucible is arranged directly below the flow guide cylinder; the heater is arranged below the quartz ceramic crucible.
[0012] In some embodiments, the quartz ceramic crucible is filled with silicon liquid.
[0013] In some embodiments, the quartz ceramic crucible is further provided with a crucible wall on the outside, and the crucible wall is arranged inside the single crystal furnace body.
[0014] In some embodiments, the quartz ceramic crucible bottom is further provided with a crucible support arranged inside the single crystal furnace body.
[0015] In some embodiments, the crucible side is fixedly installed on the crucible support, and the crucible support abuts against the quartz ceramic crucible bottom.
[0016] In some embodiments, the quartz ceramic crucible bottom is further connected with a support rod, the crucible support is fixedly installed on the support rod, and the support rod is rotatably installed on the single crystal furnace body.
[0017] In some embodiments, the single crystal furnace body is further provided with a power component for driving the rotation of the support rod, and the power component comprises a driving motor in transmission connection with the support rod.
[0018] Compared with the prior art, the quartz crucible and the molten silicon are prevented from reacting, the production of SiO is eliminated, and the oxygen content is reduced. BRIEF DESCRIPTION OF DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.
[0020] Figure 1 FIG. 1 is a structural schematic view of a quartz ceramic crucible in an embodiment of the present utility model.
[0021] Figure 2 FIG. 2 is a structural schematic view of a single crystal furnace in an embodiment of the present utility model.
[0022] In the figure, 1 is a flow guide cylinder, 2 is a water cooling screen, 3 is a crucible side, 4 is a silicon liquid, 5 is a crucible support, 6 is a support rod, 7 is a heater, 8 is a quartz ceramic crucible, 81 is an opaque layer, 82 is a vacuum transparent layer, and 83 is a ceramic layer. DETAILED DESCRIPTION
[0023] The embodiments of the present disclosure will be further described in detail below in combination with the drawings and the embodiments. The detailed description of the following embodiments and the drawings are used to exemplarily illustrate the principles of the present disclosure, but cannot be used to limit the scope of the present disclosure, and the present disclosure can be implemented in many different forms, and is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.
[0024] The present disclosure provides these examples to make the disclosure thorough and complete, and to fully convey the scope of the disclosure to those skilled in the art. It should be noted that: unless otherwise specified, the relative arrangement of components and steps, the components of materials, numerical expressions and numerical values set forth in these examples should be interpreted as merely exemplary, not as a limitation.
[0025] It should be noted that, in the description of the present disclosure, unless otherwise specified, the meaning of "a plurality of" is greater than or equal to two; The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer" and the like is only for the purpose of facilitating the description of the present disclosure and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation to the present disclosure. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0026] In addition, "first", "second", and similar words used in the present disclosure do not indicate any order, number or importance, but are only used to distinguish different parts. "Vertical" is not strictly vertical, but within the allowable range of error. "Parallel" is not strictly parallel, but within the allowable range of error. "Include" or "contain" and similar words mean that the elements before the word cover the elements listed after the word, and do not exclude the possibility of also covering other elements.
[0027] It should also be noted that, in the description of the present disclosure, unless otherwise specified and limited, the terms "mount", "connect", "connection" should be understood broadly, for example, it can be a fixed connection, or a detachable connection, or an integral connection; It can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances. When it is described that a specific device is located between the first device and the second device, there can be an intermediate device between the specific device and the first device or the second device, or there can be no intermediate device.
[0028] All terms used in the present disclosure have the same meaning as understood by those skilled in the art to which the present disclosure belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art, and should not be interpreted in an idealized or excessively formalized sense, unless otherwise defined explicitly herein.
[0029] Techniques, methods, and equipment known to those skilled in the relevant art may not be discussed in detail, but in appropriate circumstances, the techniques, methods, and equipment should be considered part of the specification.
[0030] SeeFigure 1 and Figure 2 as shown, Figure 1 is a structural schematic view of a quartz ceramic crucible in the embodiment of the present application. Figure 2 is a structural schematic view of a single crystal furnace in the embodiment of the present application. With the continuous development of the world economy, the modernization construction has a growing demand for efficient energy. As a kind of green energy and a major energy for human sustainable development, photovoltaic power generation is increasingly valued and developed by countries around the world. Single crystal silicon wafer, as a kind of basic material for photovoltaic power generation, has a wide market demand. In the process of preparing single crystal silicon in the crucible in the main body of the single crystal furnace in the prior art, the oxygen content is too high, which affects the quality of the silicon rod. In order to solve this technical problem, a quartz ceramic crucible and a single crystal furnace are provided.
[0031] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the case of no conflict, the following examples and features in the examples can be combined with each other.
[0032] Example 1
[0033] Please refer to Figure 1 , the structural view of the quartz ceramic crucible 8 provided in the embodiment 1 of the present application, the quartz ceramic crucible 8 comprises: an outer layer and a ceramic layer 83 arranged on the inner wall of the outer layer.
[0034] The present application discloses a novel quartz ceramic crucible, which prevents the reaction between the crucible and the molten silicon through the plating layer, not only reduces the oxygen content of the silicon rod, but also improves the service life of the crucible.
[0035] In some embodiments, the outer layer comprises an opaque layer 81 and a vacuum transparent layer 82, the vacuum transparent layer 82 is arranged on the inner wall of the opaque layer 81; the ceramic layer 83 is arranged on the inner wall of the vacuum transparent layer 82.
[0036] In some embodiments, the main component of the ceramic layer 83 is aluminum silicate fiber. On the one hand, the ceramic layer 83 prevents the reaction between the quartz crucible and the molten silicon, and eliminates the generation of SiO, thereby reducing the oxygen content. On the other hand, the dense and tiny cristobalite crystals formed on the inner side of the crucible can greatly improve the service life of the crucible.
[0037] Example 2
[0038] As Figure 2 shown, the present application further provides a single crystal furnace, which comprises: a single crystal furnace main body, a flow guide cylinder 1, a water-cooled screen 2, a heater 7 and a quartz ceramic crucible 8 arranged inside the single crystal furnace main body; the water-cooled screen 2 is arranged inside the flow guide cylinder 1, and the quartz ceramic crucible 8 is arranged directly below the flow guide cylinder 1; the heater 7 is arranged below the quartz ceramic crucible 8 and is used for heating the quartz ceramic crucible 8.
[0039] In some embodiments, the heater 7 provides heat for the quartz ceramic crucible 8. The water-cooled screen 2 is used to provide cooling for the silicon rod growth, increase the temperature gradient and thus increase the pulling speed. The flow guide cylinder 1 is used to insulate the heat field and guide the argon gas flow. The quartz ceramic crucible 8 is used as a container for the silicon liquid required for single crystal growth.
[0040] In some embodiments, the quartz ceramic crucible 8 is filled with silicon liquid 4 inside.
[0041] In some embodiments, the quartz ceramic crucible 8 is further provided with a crucible support 3 outside, which is arranged inside the single crystal furnace body and is used to support the quartz ceramic crucible 8.
[0042] In some embodiments, the quartz ceramic crucible 8 is further provided with a crucible support 5 at the bottom, which is arranged inside the single crystal furnace body, the crucible support 3 is fixedly installed on the crucible support 5, the crucible support 5 abuts against the bottom of the quartz ceramic crucible 8, and the crucible support 5 is used to support the quartz ceramic crucible 8 and the crucible support 3.
[0043] In some embodiments, the quartz ceramic crucible 8 is further connected with a support rod 6, which is used to support the heat field during the operation of the single crystal furnace and drive the quartz ceramic crucible 8 to rotate.
[0044] In some embodiments, the crucible support 5 is fixedly installed on the support rod 6, and the support rod 6 is rotatably installed on the single crystal furnace body.
[0045] In some embodiments, the single crystal furnace body is further provided with a power component for driving the rotation of the support rod 6, and the power component comprises a driving motor, which is in transmission connection with the support rod 6 and provides power for the rotation of the support rod 6.
[0046] The novel quartz ceramic crucible is developed, the reaction of the crucible and the molten silicon is prevented, the oxygen content can be reduced to 2ppma, and the service life of the crucible can be increased by 50H.
[0047] Thus, the embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concept of the present disclosure, some details known in the art are not described. Those skilled in the art can fully understand how to implement the technical solutions disclosed herein according to the above description.
[0048] Although some specific embodiments of the present disclosure have been described in detail by way of examples, one skilled in the art should understand that the above examples are only for illustration, and are not intended to limit the scope of the present disclosure. One skilled in the art should understand that the above embodiments can be modified or equivalent replacements can be made to some technical features without departing from the scope and spirit of the present disclosure. In particular, the technical features mentioned in each embodiment can be combined in any manner as long as there is no structural conflict.
Claims
1. A quartz ceramic crucible, characterized by, The quartz ceramic crucible (8) comprises: an outer layer and a ceramic layer (83) arranged on the inner wall of the outer layer, the outer layer comprises an opaque layer (81) and a vacuum transparent layer (82), the vacuum transparent layer (82) is arranged on the inner wall of the opaque layer (81); the ceramic layer (83) is arranged on the inner wall of the vacuum transparent layer (82), and the main component of the ceramic layer (83) is aluminum silicate fiber.
2. A single crystal furnace characterized by comprising: Comprise: A single crystal furnace body, a flow guide cylinder (1), a water-cooled screen (2), a heater (7) and the quartz ceramic crucible (8) as claimed in claim 1 arranged inside the single crystal furnace body; the water-cooled screen (2) is arranged inside the flow guide cylinder (1), and the quartz ceramic crucible (8) is arranged directly below the flow guide cylinder (1); the heater (7) is arranged below the quartz ceramic crucible (8).
3. A single crystal furnace as defined in claim 2, wherein The quartz ceramic crucible (8) is filled with silicon liquid (4) inside.
4. A single crystal furnace as defined in claim 2, wherein The quartz ceramic crucible (8) is further provided with a crucible support (3) outside, and the crucible support (3) is arranged inside the single crystal furnace body.
5. A single crystal furnace as claimed in claim 4, wherein The quartz ceramic crucible (8) is further provided with a crucible support (5) at the bottom, and the crucible support (5) is arranged inside the single crystal furnace body.
6. A single crystal furnace as claimed in claim 5, wherein The crucible support (3) is fixedly installed on the crucible support (5), and the crucible support (5) abuts against the bottom of the quartz ceramic crucible (8).
7. A single crystal furnace as defined in claim 6, wherein The quartz ceramic crucible (8) is further connected with a support rod (6) at the bottom, the crucible support (5) is fixedly installed on the support rod (6), and the support rod (6) is rotatably installed on the single crystal furnace body.
8. A single crystal furnace as defined in claim 7, wherein The single crystal furnace body is further provided with a power component for driving the rotation of the support rod (6), and the power component comprises a driving motor, and the driving motor is in transmission connection with the support rod (6).