Radio frequency module

Abstract

The utility model discloses a radio frequency module, which comprises a first tuner switch, and the first tuner switch comprises a first switch branch. The first switch branch comprises a first terminal, a second terminal, n switch units and n first resistors, the n switch units are sequentially connected between the first terminal of the first switch branch and the second terminal of the first switch branch in series, and the n first resistors are connected with the n switch units in parallel in a one-to-one correspondence mode. The first switch unit to the third switch unit from the first terminal of the first switch branch form a first switch network, the (n-2) th switch unit to the nth switch unit form a second switch network, and n is a positive integer greater than or equal to 6; at least one end of the first harmonic processing unit is connected with the first switching network, and at least one end of the second harmonic processing unit is connected with the second switching network; harmonic signals in the first tuner switch are suppressed, and the linearity of the first tuner switch is further improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency module. Background Technology

[0002] In communication terminals, wireless communication is achieved through radio frequency (RF) modules. RF modules consist of an RF front-end module and an antenna port module; the combined action of these two modules enables the reception and transmission of RF signals. With the rapid development of mobile communication technology, higher performance requirements have been placed on RF modules, such as high isolation, better linearity, low insertion loss, small size, and low production cost. Summary of the Invention

[0003] This application provides an embodiment of a radio frequency module to solve the problem of poor linearity of the switching circuit on the radio frequency module.

[0004] A radio frequency module includes an antenna tuning circuit. The antenna tuning circuit includes a first tuner switch, a first terminal of which is configured to be connected to an antenna port, and a second terminal of which is configured to be grounded. The first tuner switch includes a first switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the first switch branch, n first resistors, and n first resistors connected in parallel with the n switch units in a one-to-one correspondence. It also includes at least one first harmonic processing unit and at least one second harmonic processing unit. A first switch network is formed from the first terminal of the first switch branch to the third switch unit, and a second switch network is formed from the (n-2)th switch unit to the nth switch unit, where n is a positive integer greater than or equal to 6. At least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network.

[0005] A radio frequency (RF) module includes an antenna tuning circuit and an RF front-end circuit. The antenna tuning circuit includes a first switch, and the RF front-end circuit includes a second switch. The first switch is connected between an antenna port and ground. The first switch includes a third switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the third switch branch, at least one first harmonic processing unit, and at least one second harmonic processing unit. The first to third switch units starting from the first terminal form a first switch network, and the (n-2)th to the nth switch units form a second switch network, where n is greater than or equal to 6. The first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network. The second switch is connected between any two different nodes on the RF front-end circuit. The system includes a fourth switch branch, comprising a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit, and at least one sixth harmonic processing unit. Switch units 1 to 3, starting from the first terminal of the fourth switch branch, form a fifth switch network, and switch units (n-2) to n, forming a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. When the first switch and the second switch are configured to support the same radio frequency signal transmission, the total number of the first and second harmonic processing units on the first switch is different from the total number of the fifth and sixth harmonic processing units on the second switch.

[0006] A radio frequency (RF) module includes an RF front-end circuit. The RF front-end circuit includes a second switch, the second switch including a fifth switch branch, the fifth switch branch including a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fifth switch branch, n first resistors, n first resistors connected in parallel with the n switch units, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit. The first to third switch units starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the (n-2)th to the nth switch units constitute a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0007] In a first embodiment, a radio frequency module includes an antenna tuning circuit. The antenna tuning circuit includes a first tuner switch, a first terminal of which is configured to be connected to an antenna port, and a second terminal of which is configured to be grounded. The first tuner switch includes a first switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the first switch branch, n first resistors, and n first resistors connected in parallel with the n switch units in a one-to-one correspondence. It also includes at least one first harmonic processing unit and at least one second harmonic processing unit. The first to third switch units, starting from the first terminal of the first switch branch, constitute a first switch network, and the (n-2)th to the nth switch units constitute a second switch network, where n is a positive integer greater than or equal to 6. At least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network. This embodiment, through the combined action of n first resistors, the first harmonic processing unit, and the second harmonic processing unit, can not only improve the uneven distribution of voltage swing in the first switching branch, but also effectively suppress or eliminate harmonic signals under different power levels, thereby improving the linearity of the first tuner switch; and thus optimizing the overall performance of the RF module.

[0008] In a second embodiment, a radio frequency (RF) module includes an antenna tuning circuit and an RF front-end circuit. The antenna tuning circuit includes a first switch, and the RF front-end circuit includes a second switch. The first switch is connected between an antenna port and ground. The first switch includes a third switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the third switch branch, at least one first harmonic processing unit, and at least one second harmonic processing unit. The first to third switch units starting from the first terminal form a first switch network, and the (n-2)th to the nth switch units form a second switch network, where n is greater than or equal to 6. The first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network. The second switch is connected between any two different nodes on the RF front-end circuit. The second switch includes a fourth switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fourth switch branch, and at least one... A fifth harmonic processing unit and at least one sixth harmonic processing unit are provided. The first to third switch units, starting from the first terminal of the fourth switch branch, form a fifth switch network, and the (n-2)th to the nth switch units form a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. When the first switch and the second switch are configured to support the same radio frequency signal transmission, the total number of the first and second harmonic processing units on the first switch is different from the total number of the fifth and sixth harmonic processing units on the second switch. In this embodiment, when the first and second switches are configured to support the same radio frequency signal transmission, by making the total number of the first and second harmonic processing units on the first switch different from the total number of the fifth and sixth harmonic processing units on the second switch, harmonic signals at different power levels can be effectively suppressed or eliminated to improve the linearity of the radio frequency module and thus optimize the overall performance of the radio frequency module.

[0009] In a third embodiment, an RF module includes an RF front-end circuit. The RF front-end circuit includes a second switch, which includes a fifth switch branch. The fifth switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fifth switch branch, n first resistors, and n first resistors connected in parallel with the n switch units, at least one fifth harmonic processing unit, and at least one sixth harmonic processing unit. The first switch unit starts from the first terminal of the fifth switch branch and extends to the third switch unit. The first resistors form the fifth switching network, and the (n-2)th to the nth switching units form the sixth switching network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switching network, and the sixth harmonic processing unit is connected to the sixth switching network. In this embodiment, through the combined action of the n first resistors, the fifth harmonic processing unit, and the sixth harmonic processing unit, not only can the uneven distribution of voltage swing on the fifth switching branch be improved, but also harmonic signals at different power levels can be effectively suppressed or eliminated to improve the linearity of the second switch; thereby optimizing the overall performance of the RF module. Attached Figure Description

[0010] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a schematic diagram of a radio frequency module in one embodiment of this application;

[0012] Figure 2 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0013] Figure 3 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0014] Figure 4 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0015] Figure 5 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0016] Figure 6 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0017] Figure 7 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0018] Figure 8 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0019] Figure 9 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0020] Figure 10 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0021] Figure 11 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0022] Figure 12 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0023] Figure 13 This is another schematic diagram of the radio frequency module in one embodiment of this application;

[0024] Figure 14 This is a simulation diagram of the radio frequency module in one embodiment of this application;

[0025] Figure 15 This is a simulation diagram of the radio frequency module in one embodiment of this application. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0027] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0028] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0029] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0030] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0031] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0032] as follows Figure 1 and2 As shown, this embodiment provides a radio frequency module, including an antenna tuning circuit. The antenna tuning circuit includes a first tuner switch 100, a first terminal of which is configured to be connected to an antenna port, and a second terminal of which is configured to be grounded. The first tuner switch 100 includes a first switch branch, which includes a first terminal A, a second terminal B, n switch units (K1-Kn) sequentially connected in series between the first terminal and the second terminal of the first switch branch, and n first resistors. (R1-Rn), n first resistors are connected in parallel with n switching units in a one-to-one correspondence, at least one first harmonic processing unit 11 and at least one second harmonic processing unit 21, the first to third switching units starting from the first terminal constitute a first switching network 10, and the (n-2)th to nth switching units constitute a second switching network 20, where n is greater than or equal to 6; wherein, at least one end of the first harmonic processing unit 11 is connected to the first switching network 10, and at least one end of the second harmonic processing unit 21 is connected to the second switching network 20. It should be noted that the term "connection" in this application can be understood as either a direct connection or an indirect connection.

[0033] In one specific embodiment, the antenna tuning circuit is configured to tune the impedance at the antenna and determine the optimal tuning state for antenna tuning based on the antenna impedance. In this embodiment, a first terminal of the first tuner switch is configured to be connected to the antenna via an antenna port, and a second terminal of the first tuner switch is configured to be grounded.

[0034] In one specific embodiment, as follows: Figure 2As shown, the first switch branch includes n switch units and n first resistors. The first terminal of the first switch unit K1 is connected to the first terminal A. The second terminal of the first switch unit K1 is connected to the first terminal K2. The second terminal of the second switch unit K2 is connected to the first terminal K3. The second terminal of the (n-2)th switch unit Kn-2 is connected to the first terminal of the (n-1)th switch unit Kn-1. The second terminal of the (n-1)th switch unit Kn-1 is connected to the first terminal of the nth switch unit Kn. The second terminal of the nth switch unit is connected to the second terminal B. The two ends of resistor R1 are connected to the first and second terminals of the first switch unit K1, the two ends of resistor R2 are connected to the first and second terminals of the second switch unit K2, and so on. The two ends of resistor Rn are connected to the first and second terminals of the nth switch unit Kn, where n is a positive integer greater than or equal to 6. The resistance value of each first resistor is generally between 10 KOhm and 20 KOhm. It can not only stabilize the DC potential across the switching unit and prevent DC voltage drop during switching, but also improve the uneven distribution of voltage swing in the first switching branch and improve linearity.

[0035] In one specific embodiment, at least one end of the first harmonic processing unit 11 is connected to the first switching network 10. Specifically, the first harmonic processing unit 11 may be connected at one end to a node on the first switching network 10 and at the other end to other nodes on the first switching branch, or both ends of the first harmonic processing unit 11 may be connected to nodes on the first switching network 10. Similarly, at least one end of the second harmonic processing unit 21 is connected to the second switching network 20. Specifically, the second harmonic processing unit 21 may be connected at one end to a node on the first switching network 20 and at the other end to other nodes on the first switching branch, or both ends of the second harmonic processing unit 21 may be connected to nodes on the second switching network 20.

[0036] The first harmonic processing unit 11 and the second harmonic processing unit 21 may be composed of diodes, transistors, or MOS capacitors.

[0037] In one specific embodiment, the first harmonic processing unit 11 and the second harmonic processing unit 21 have the same circuit structure. For example, both the first harmonic processing unit and the second harmonic processing unit consist of two reverse-connected transistors, which can be connected in parallel or in series. The two reverse-connected transistors can be two reverse-connected diodes or two reverse-connected transistors.

[0038] In at least one embodiment, the first harmonic processing unit 11 includes a first diode and a second diode connected in parallel and in reverse, with the anode of the first diode connected to the cathode of the second diode, and the anode of the second diode connected to the cathode of the first diode. Similarly, the second harmonic processing unit 12 includes a third diode and a fourth diode connected in parallel and in reverse, with the anode of the third diode connected to the cathode of the fourth diode, and the anode of the fourth diode connected to the cathode of the third diode. Further, the first diode and the second diode are identical, and all parameters (e.g., area) of the third diode and the fourth diode are identical.

[0039] When the radio frequency signal passes through the first diode and the second diode, a self-biasing voltage is generated. Based on the directionality of the diodes, this self-biasing voltage causes the first diode and the second diode to work alternately. During this working state, the currents of the first diode and the second diode change over time. The superimposed current generates a first suppression signal that is out of phase with the radio frequency signal in the first switching branch. This first suppression signal can suppress or eliminate harmonic signals in the first switching branch, thereby improving the linearity of the first tuner switch. It should be noted that the working principle of the second harmonic processing unit 21 is the same as that of the first harmonic processing unit 11, and will not be repeated here.

[0040] In one specific embodiment, the number and specific structure of the first harmonic processing unit and the second harmonic processing unit can be set according to actual needs. The number of the first harmonic processing unit and the number of the second harmonic processing unit can be the same or different. For example, the number of the first harmonic processing unit and the number of the second harmonic processing unit are both 1, or the number of the first harmonic processing unit is 2 and the number of the second harmonic processing unit is 1.

[0041] In at least one embodiment, the number of the first harmonic processing units is the same as the number of the second harmonic processing units.

[0042] In at least one embodiment, the radio frequency module includes a plurality of first harmonic processing units and a plurality of second harmonic processing units, wherein the first end and / or the second end of different first harmonic processing units are respectively connected to different nodes on the transmission path of the first switching network, and the first end and / or the second end of different second harmonic processing units are respectively connected to different nodes on the transmission path of the second switching network.

[0043] In one specific embodiment, a harmonic processing unit is defined as two harmonic processing units connected to the same two nodes of the first switch branch. Of the two first harmonic processing units, at least one end of one of the first harmonic processing units and the other first harmonic processing unit is connected to different nodes. For example: Reference Figure 4 As shown, harmonic processing unit 111 and harmonic processing unit 112 are connected in parallel across the two ends of switching unit K1. Harmonic processing unit 111 and harmonic processing unit 112 are equivalent to a first harmonic processing unit 11. Compared to Figure 3 The first harmonic processing unit 11 in the middle, Figure 4 The first harmonic processing unit 11 can be understood as a harmonic processing unit with an increased area. It should be noted that the method for determining the number of the second harmonic processing units is the same as that for the first harmonic processing unit, and will not be elaborated here.

[0044] In one specific embodiment, when the first tuner switch 100 includes multiple first harmonic processing units, the circuit structure of each first harmonic processing unit is identical. For example, the circuit structures of the first harmonic processing unit 11 and the first harmonic processing unit 12 are identical. Each first harmonic processing unit is composed of diodes.

[0045] Alternatively, each of the first harmonic processing units can be different. For example, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different; the first harmonic processing unit 11 is composed of diodes, and the second harmonic processing unit 12 is composed of MOS capacitors.

[0046] It should be noted that when the first tuner switch 100 includes multiple second harmonic processing units, the implementation of the second harmonic processing unit 21 is the same as that of the first harmonic processing unit described above, and will not be described redundantly here.

[0047] In this embodiment, "multiple" includes two or more.

[0048] as follows Figure 14 The diagram shows simulation results of different numbers of the first and second harmonic processing units connected to the first switching network (comprising the first to third switching units) and the second switching network (comprising the (n-2)th to the nth switching units) in this embodiment, where the areas of each first harmonic processing unit and each second harmonic processing unit are the same. Figure 14In the diagram, the horizontal axis represents the power of the input signal (Pin), and the vertical axis represents the power of the harmonic signal (Harminics). Specifically, the blue curve 0_0 represents the power of the harmonic signal on the first switch branch without the first and second harmonic processing units connected; the orange curve 1_1 represents the power of the harmonic signal on the first switch branch with one first harmonic processing unit connected to the first switch network and one second harmonic processing unit connected to the second switch network; the gray curve 2_2 represents the power of the harmonic signal on the first switch branch with two first harmonic processing units connected to the first switch network and two second harmonic processing units connected to the second switch network; and the yellow curve 3_3 represents the power of the harmonic signal on the first switch branch with three first harmonic processing units connected to the first switch network and three second harmonic processing units connected to the second switch network. Figure 14 As can be seen, this embodiment can effectively suppress or eliminate harmonic signals at different power levels by connecting different numbers of the first harmonic processing units to the first switching network composed of the first to the third switching units, and different numbers of the second harmonic processing units to the second switching network composed of the n-2 to the nth switching units.

[0049] In this embodiment, on the one hand, by connecting a first resistor in parallel across each switching unit, the uneven distribution of voltage swing on the switching link is improved to ensure linearity. However, since the harmonic signals on the first three switching units near the first terminal and the last three switching units near the second terminal in the first switching branch are relatively obvious, the first harmonic processing unit is connected to the first switching network composed of the first to third switching units, and the second harmonic processing unit is connected to the second switching network composed of the n-2 to nth switching units. Compared with the method of connecting a harmonic processing unit to any switching unit in the related technology, this embodiment can not only improve the uneven distribution of voltage swing on the switching link through the combined action of n first resistors, the first harmonic processing unit and the second harmonic processing unit, but also effectively suppress or eliminate harmonic signals at different power levels, ensuring that the performance of the first tuner switch is not affected at low power, and suppressing or eliminating harmonic signals on the first switching branch at high power, so as to improve the linearity of the first tuner switch while ensuring performance; thereby optimizing the overall performance of the RF module.

[0050] In this embodiment, a radio frequency module includes an antenna tuning circuit. The antenna tuning circuit includes a first tuner switch, a first terminal of which is configured to be connected to an antenna port, and a second terminal of which is configured to be grounded. The first tuner switch includes a first switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the first switch branch, n first resistors, and n first resistors connected in parallel with the n switch units, at least one first harmonic processing unit, and at least one second harmonic processing unit. The first to third switch units, starting from the first terminal of the first switch branch, constitute a first switch network. The (n-2)th to the nth switching units constitute the second switching network, where n is a positive integer greater than or equal to 6. At least one end of the first harmonic processing unit is connected to the first switching network, and at least one end of the second harmonic processing unit is connected to the second switching network. In this embodiment, the combined action of the n first resistors, the first harmonic processing unit, and the second harmonic processing unit not only improves the uneven distribution of voltage swing on the first switching branch, but also effectively suppresses or eliminates harmonic signals at different power levels, ensuring that the performance of the first tuner switch is unaffected at low power, and suppresses or eliminates harmonic signals on the first switching branch at high power, thereby improving the linearity of the first tuner switch while ensuring performance; thus optimizing the overall performance of the RF module.

[0051] In one embodiment, the first terminal is configured to connect to a node on the signal transmission path, and the second terminal is configured to be grounded. When the first terminal is configured to connect to a node on the signal transmission path and the second terminal is configured to be grounded, the switching unit in the first tuner switch transmits the radio frequency signal input from the node on the signal transmission path to the ground terminal when it is in the ON state.

[0052] In one specific embodiment, the number of the first harmonic processing units 11 is different from the number of the second harmonic processing units 12.

[0053] In at least one embodiment, since the voltage division between different switching units on the first switching branch is different, the magnitude of the generated harmonic signals is also different. Therefore, in order to effectively suppress the harmonic signals of each switching unit on the first switching branch, the number of the first harmonic processing units connected to the first switching network is different from the number of the second harmonic processing units 12 connected to the second switching network, so that the harmonic signals on the first switching branch can be suppressed or eliminated more flexibly.

[0054] In one specific embodiment, the number of the first harmonic processing units 11 is greater than the number of the second harmonic processing units 12.

[0055] As an example, when the area of ​​each switching unit on the first switching branch is the same, the voltage V of the first three switching units closest to the first terminal on the first switching branch is... DS The voltage V on the last three switching units closest to the second terminal DS The harmonic signals are larger and more pronounced. Therefore, by increasing the number of the first harmonic processing units to be greater than the number of the second harmonic processing units, the harmonic signals on the first switching branch can be suppressed or eliminated more effectively, thereby improving the harmonic suppression effect. For example, the number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 1.

[0056] In one specific embodiment, as follows: Figure 5 As shown, the first tuner switch 100 is an aperture tuning circuit. One end of the first tuner switch 100 is configured to connect to the first antenna port, and the other end of the first tuner switch is configured to ground. The aperture tuning circuit can be used to improve the efficiency of the antenna port.

[0057] In one specific embodiment, as follows: Figure 5 As shown, the first tuner switch is a single-pole multi-throw switch. The first tuner switch also includes a third terminal, which is connected to and grounded after being connected to the second terminal of the first tuner switch. Understandably, the third terminal and the second terminal of the first tuner switch are grounded after being connected to each other (the stationary terminals), and the first terminal of the first tuner switch (the moving terminal) is configured to be connected to the antenna port.

[0058] In one specific embodiment, as follows: Figure 6 As shown, the RF module also includes a second tuner switch 101. The second tuner switch 101 and the second tuner switch 100 can be connected to the same antenna port. Alternatively, the second tuner switch 101 and the second tuner switch 100 can be connected to different antenna ports. For example, the first tuner switch 100 is connected to the first antenna port, and the second tuner switch 101 is connected to the second antenna port.

[0059] In one specific embodiment, the antenna tuning circuit further includes a second tuner switch. The first terminal of the second tuner switch is configured to be connected to the antenna port, and the second terminal of the first tuner switch is configured to be grounded. The second tuner switch 101 includes a second switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the second switch branch, n second resistors, and n second resistors connected in parallel with the n switch units in a one-to-one correspondence. It also includes at least one third harmonic processing unit and at least one fourth harmonic processing unit. The first to third switch units starting from the first terminal of the second switch branch constitute a third switch network, and the (n-2)th to the nth switch units constitute a fourth switch network, where n is greater than or equal to 6. At least one end of each third harmonic processing unit is connected to the third switch network, and at least one end of each fourth harmonic processing unit is connected to the fourth switch network.

[0060] In this embodiment, the specific structure, connection method and function of the second resistor, the third harmonic processing unit and the fourth harmonic processing unit in the second tuner switch 101 are the same as the specific structure, connection method and function of the first resistor, the first harmonic processing unit and the second harmonic processing unit in the first tuner switch 100 in the above embodiment, and will not be described redundantly here.

[0061] In this embodiment, the RF module further includes a second tuner switch, which includes a second switch branch. The second switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the second switch branch, n second resistors, and n second resistors connected in parallel with the n switch units, at least one third harmonic processing unit, and at least one fourth harmonic processing unit. The first to third switch units starting from the first terminal of the second switch branch constitute a third switch network, and the (n-2)th to the nth switch units constitute a fourth switch network, where n is greater than or equal to 1. In 6; wherein, at least one end of the third harmonic processing unit is connected to the third switch network, and at least one end of the fourth harmonic processing unit is connected to the fourth switch network; in this embodiment, under the combined action of n second resistors, the third harmonic processing unit and the fourth harmonic processing unit, not only can the uneven distribution of voltage swing on the switch link be improved, but also the harmonic signals under different power levels can be effectively suppressed or eliminated, ensuring that the performance of the second tuner switch is not affected at low power, and suppressing or eliminating the harmonic signals on the second switch branch at high power, so as to improve the linearity of the second tuner switch while ensuring performance; thereby optimizing the overall performance of the RF module.

[0062] In one specific embodiment, the first tuner switch is configured to support radio frequency signal transmission in a first frequency band, and the second tuner switch is configured to support radio frequency signal transmission in a second frequency band, wherein the first frequency band is greater than the second frequency band; the total area of ​​the first harmonic processing unit and the second harmonic processing unit is greater than the total area of ​​the third harmonic processing unit and the fourth harmonic processing unit. The areas of the first harmonic processing unit, the second harmonic processing unit, the third harmonic processing unit, and the fourth harmonic processing unit can be obtained using simulation tools (e.g., the Cadence simulation tool).

[0063] In at least one embodiment, since the higher the operating frequency band of the radio frequency signal transmitted by the switching circuit, the more obvious its harmonic signals are, in order to process the harmonic signals on the first tuner switch and the second tuner switch more flexibly, when the frequency band of the radio frequency signal supported by the first tuner switch is greater than the frequency band of the radio frequency signal supported by the second tuner switch, the total area of ​​the first harmonic processing unit and the second harmonic processing unit is greater than the total area of ​​the third harmonic processing unit and the fourth harmonic processing unit. This allows for the effective suppression or elimination of harmonic signals of different frequency bands transmitted on the first tuner switch and the second tuner switch, thereby optimizing the overall performance of the radio frequency module.

[0064] In one specific embodiment, the first tuner switch is configured to suppress harmonic signals of a first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; the second tuner switch is configured to suppress harmonic signals of a second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; wherein, the first power is less than or equal to the second power, and X is less than or equal to Y.

[0065] In one specific embodiment, the higher the power of the radio frequency signal transmitted by the first tuner switch, the higher the power of the harmonic signals that need to be suppressed. This also means a greater impact of the harmonic signals on the circuit. Therefore, when the second tuner switch is configured to suppress higher-power harmonic signals, a greater number of third and fourth harmonic processing units are needed to generate harmonics with opposite phases to cancel out the higher-power harmonic signals. Conversely, when the first tuner switch is configured to suppress lower-power harmonic signals, the total number of first and second harmonic processing units can be reduced to avoid affecting other circuit performance. This allows for effective suppression of harmonic signals at different power levels while reducing the number of circuit components and lowering costs.

[0066] as follows Figure 15The diagram shows simulation results of different numbers of the first and second harmonic processing units connected to the first switching network (comprising the first to third switching units) and the second switching network (comprising the (n-2)th to the nth switching units) in this embodiment, where the areas of each first harmonic processing unit and each second harmonic processing unit are the same. Figure 15 Compared to Figure 14 The difference is Figure 15 The area of ​​each of the first harmonic processing units and each of the second harmonic processing units is greater than Figure 14 Each of the first harmonic processing units and each of the second harmonic processing units in the [theory / system]. Wherein, in [the context of the harmonic processing unit]... Figure 15 In the diagram, the horizontal axis represents the power of the input signal (Pin), and the vertical axis represents the power of the harmonic signal (Harminics). Specifically, the black curve 0_0 represents the power of the harmonic signal on the first switch branch without the first and second harmonic processing units connected; the gray curve 1_1 represents the power of the harmonic signal on the first switch branch with one first harmonic processing unit connected to the first switch network and one second harmonic processing unit connected to the second switch network; the green curve 2_2 represents the power of the harmonic signal on the first switch branch with two first harmonic processing units connected to the first switch network and two second harmonic processing units connected to the second switch network; and the blue curve 3_3 represents the power of the harmonic signal on the first switch branch with three first harmonic processing units connected to the first switch network and three second harmonic processing units connected to the second switch network. Through simulation... Figure 14 and simulation Figure 15 A comparison of simulation diagrams shows that, when the number of the first and second harmonic processing units is the same, if the areas of the first and second harmonic processing units are different, their ability to suppress harmonic signals will also differ. For example: Figure 14 The orange curve 3_3 and Figure 15 The blue curves 3_3 in the diagram represent the power of the harmonic signals on the first switch branch when three first harmonic processing units are connected to the first switch network and three second harmonic processing units are connected to the second switch network, respectively. However, since the areas of the first and second harmonic processing units are different, therefore... Figure 14 The orange curve 3_3 in the diagram shows the best suppression effect for harmonic signals with a power point of 33dBm. Figure 15The blue curve 3_3 in the diagram shows the best suppression effect for harmonic signals with a power point of 37dBm. Therefore, when suppressing higher power harmonic signals, given that the number of the first and second harmonic processing units remains constant, the area of ​​the first and second harmonic processing units can be increased to effectively suppress harmonic signals with higher power points.

[0067] In this embodiment, the first tuner switch is configured to suppress harmonic signals of a first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; the second tuner switch is configured to suppress harmonic signals of a second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; wherein, the first power is less than or equal to the second power, and X is less than or equal to Y; thereby, while ensuring that the circuit performance is not affected, harmonic signals at different power levels can be effectively suppressed or eliminated, thereby improving the linearity of the circuit.

[0068] In one specific embodiment, when the first tuner switch is configured to support radio frequency signals of the first frequency band, the area of ​​one of the first harmonic processing units is [20µm]. 2 50um 2 The area of ​​one of the second harmonic processing units is [20µm]. 2 50um 2 ], wherein the range of the first frequency band is [0, 900MHz].

[0069] In one specific embodiment, the first tuner switch is configured to support radio frequency signals in the second frequency band, and the area of ​​one of the first harmonic processing units is [30µm]. 2 80um 2 The area of ​​one of the second harmonic processing units is [30µm]. 2 80um 2 ], wherein the range of the second frequency band is [900MHz, 1880MHz].

[0070] It should be noted that the areas of the first harmonic processing unit and the second harmonic processing unit in this embodiment can be determined by simulation tools (e.g., the simulation tool Cadence).

[0071] As can be seen from the above embodiments, when the first tuner switch is configured to transmit radio frequency signals of different frequency bands, the area of ​​the first harmonic processing unit and the area of ​​the second harmonic processing unit can be configured to be different. When the first tuner switch is configured to transmit radio frequency signals of higher frequency bands, the area of ​​the first harmonic processing unit and the area of ​​the second harmonic processing unit are configured to be larger; when the first tuner switch is configured to transmit radio frequency signals of lower frequency bands, the area of ​​the first harmonic processing unit and the area of ​​the second harmonic processing unit are configured to be smaller, thereby effectively suppressing or eliminating the harmonic signals of different frequency bands transmitted on the first tuner switch, thereby optimizing the overall performance of the radio frequency module.

[0072] In one specific embodiment, the first tuner switch is configured to suppress a first harmonic signal, wherein the power of the first harmonic signal is less than or equal to 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit ranges from [1,3].

[0073] In one specific embodiment, the first tuner switch is configured to suppress a second harmonic signal, wherein the power of the first harmonic signal is greater than 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit ranges from [3,5].

[0074] In one specific embodiment, the first tuner switch is configured to suppress a third harmonic signal, wherein the power of the first harmonic signal is less than or equal to 35 dBm, the number of the first harmonic processing unit is 1, and the number of the second harmonic processing unit is 1.

[0075] In one specific embodiment, the first tuner switch is configured to suppress a fourth harmonic signal with a power range of [43dBm, 48dBm], the number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 2.

[0076] As can be seen from the above embodiments, when the first tuner switch is configured to suppress radio frequency signals of different frequency bands, the number of the first harmonic processing unit and the number of the second harmonic processing unit are different. When the first tuner switch is configured to suppress higher power harmonic signals, the number of the first harmonic processing unit and the number of the second harmonic processing unit are larger; when the first tuner switch is configured to suppress lower power harmonic signals, the number of the first harmonic processing unit and the number of the second harmonic processing unit are smaller. By setting different numbers of the first harmonic processing unit and the second harmonic processing unit for harmonic signals of different power levels, harmonic signals at different power points on the first tuner switch can be effectively suppressed, thereby improving the overall performance of the circuit.

[0077] In one specific embodiment, the switching unit is a first field-effect transistor (FET). The gate of the first FET is configured to be connected to a bias control terminal Vb, which is configured to receive an external bias control voltage to turn the switching unit on or off. A first terminal of the first resistor is connected to the source of the FET, and a second terminal of the first resistor is connected to the drain of the FET. The first FET can be a PMOS transistor or an NMOS transistor.

[0078] As an example, the switching unit includes at least one transistor. The transistor is a first field-effect transistor (MOS transistor). As an example, the first terminal of the switching unit is the drain, and the second terminal of the switching unit is the source. The drain of the first switching unit in the n switching units is connected to the first terminal, the source of the first switching unit is connected to the drain of the second switching unit, the source of the (n-1)th switching unit is connected to the drain of the nth switching unit, and the source of the nth switching unit is connected to the second terminal, where n is a positive integer greater than or equal to 6. The first terminal of the first resistor R1 is connected to the drain of the switching unit K1, the second terminal of the first resistor R1 is connected to the source of the switching unit K1, the first terminal of the first resistor R2 is connected to the drain of the switching unit K2, the second terminal of the first resistor R2 is connected to the source of the switching unit K2, the first terminal of the first resistor Rn is connected to the drain of the switching unit Kn, and the second terminal of the first resistor Rn is connected to the source of the switching unit Kn.

[0079] As an example, the first terminal of the switching unit is the source, and the second terminal is the drain. The source of the first switching unit in the n switching units is connected to the first terminal, the drain of the first switching unit is connected to the source of the second switching unit, the drain of the (n-1)th switching unit is connected to the source of the nth switching unit, and the drain of the nth switching unit is connected to the second terminal, where n is a positive integer greater than or equal to 6. The first terminal of the first resistor R1 is connected to the source of the switching unit K1, and the second terminal of the first resistor R1 is connected to the drain of the switching unit K1. The first terminal of the first resistor R2 is connected to the source of the switching unit K2, and the second terminal of the first resistor R2 is connected to the drain of the switching unit K2. The first terminal of the first resistor Rn is connected to the source of the switching unit Kn, and the second terminal of the first resistor Rn is connected to the drain of the switching unit Kn.

[0080] In one specific embodiment, the first tuner switch further includes a second field-effect transistor (FET), the source of which is connected to the body of the first FET, and the gate of the second FET is connected to its drain and, in turn, to the gate of the first FET. The second FET can be a PMOS transistor or an NMOS transistor.

[0081] In this embodiment, by connecting a second field-effect transistor, the second field-effect transistor can effectively reduce harmonics (e.g., second or third harmonics) during switching of the switching unit without increasing the resistance value of the first resistor.

[0082] In one specific embodiment, the first field-effect transistor is an NMOS transistor, and the second field-effect transistor is a PMOS transistor.

[0083] In this embodiment, since the first field-effect transistor is a transistor on the switching branch and the NMOS transistor is a transistor that conducts in the forward direction and turns off in the reverse direction, by making the first field-effect transistor an NMOS transistor and the second field-effect transistor a PMOS transistor, the harmonics (e.g., second harmonics or third harmonics) during the switching of the switching unit can be reduced while ensuring the normal switching of the first tuner switch.

[0084] In one specific embodiment, when the first ends of each of the plurality of first harmonic processing units are connected to a first node on the transmission path of the first switching network, and the second ends of each of the plurality of first harmonic processing units are connected to a second node on the transmission path of the first switching network, the plurality of first harmonic processing units are equivalent to a single first harmonic processing unit with a larger area. Similarly, when the first ends of each of the plurality of second harmonic processing units are connected to a third node on the transmission path of the second switching network, and the second ends of each of the plurality of second harmonic processing units are connected to a fourth node on the transmission path of the second switching network, the plurality of second harmonic processing units are equivalent to a single second harmonic processing unit with a larger area.

[0085] In one specific embodiment, the radio frequency module includes a plurality of first harmonic processing units and a plurality of second harmonic processing units, at least one end of each of the first harmonic processing units is connected to a different node on the transmission path of the first switching network, and at least one end of each of the second harmonic processing units is connected to a different node on the transmission path of the second switching network.

[0086] It should be noted that the nodes on the transmission path between two interconnected switching units are the same nodes. For example, all nodes on the transmission path between the second end of the first tuner switching unit and the first end of the second switching unit are the same nodes.

[0087] In addition, the nodes on the connection path between the second end of the first tuner switch unit and the first end of the second switch unit are different nodes from the nodes on the connection path between the second end of the second switch unit and the first end of the third switch unit.

[0088] As an example: a plurality of first harmonic processing units include two first harmonic processing units, wherein a first end of one first harmonic processing unit is connected to a first end of a first tuner switch unit and a second end is connected to a second end of the first tuner switch unit, and a first end of the other first harmonic processing unit is connected to a second end of the first tuner switch unit and a second end is connected to a second end of the second switch unit.

[0089] As another example: a plurality of first harmonic processing units include two first harmonic processing units, wherein a first end of one first harmonic processing unit is connected to a first end of a first tuner switch unit and a second end is connected to a second end of the first tuner switch unit; a first end of another first harmonic processing unit is connected to a second end of a second switch unit and a second end is connected to a first end of a third switch unit.

[0090] In one specific embodiment, a first end of the first harmonic processing unit is connected to a first node in the first switching network, and a second end of the first harmonic processing unit is connected to a second node in the first switching network, wherein the first node and the second node are located at different nodes on the transmission path of the first switching network.

[0091] The nodes on the first switching network include a connection node between the first terminal A and the first terminal of the first switching unit K1, a connection node between the second terminal of the first tuner switching unit K1 and the first terminal of the second switching unit K2, a connection node between the second terminal of the second switching unit K2 and the first terminal of the third switching unit K3, and a connection node between the second terminal of the third switching unit K3 and the first terminal of the fourth switching unit K4. For example, the switching unit is a field-effect transistor, with the first terminal of the switching unit being the source and the second terminal of the switching unit being the drain, or vice versa.

[0092] In at least one embodiment, the first node is a connection node between the first terminal A and the first end of the first switching unit, and the second node is a connection node between the second end of the first tuner switching unit and the first end of the second switching unit.

[0093] In one specific embodiment, the first end of the second harmonic processing unit is connected to the third node in the second switching network, and the second end of the second harmonic processing unit is connected to the fourth node in the second switching network, wherein the third node and the fourth node are located at different nodes on the transmission path of the second switching network.

[0094] The nodes on the second switching network include the connection node between the second terminal B and the second terminal of the nth switching unit, the connection node between the first terminal of the nth switching unit and the second terminal of the (n-1)th switching unit, the connection node between the first terminal of the (n-1)th switching unit and the second terminal of the (n-2)th switching unit, and the connection node between the first terminal of the (n-2)th switching unit and the second terminal of the (n-3)th switching unit. For example, the switching unit is a field-effect transistor, where the first terminal of the switching unit is the source and the second terminal of the switching unit is the drain, or the first terminal of the switching unit is the drain and the second terminal of the switching unit is the source.

[0095] In at least one embodiment, the third node is a connection node between the second terminal B and the second terminal of the nth switch unit, and the fourth node is a connection node between the first terminal of the nth switch unit and the second terminal of the (n-1)th switch unit.

[0096] In one specific embodiment, since the voltage division magnitudes borne by different switching units in the first tuner switch are different, the voltages at the ends of the switching units closer to the first terminal and closer to the second terminal are often larger (e.g., the voltages at the ends of the first tuner switch unit K1 and the nth switch unit Kn). Therefore, by connecting a first harmonic processing unit in parallel between the first and second ends of the first switching unit and a second harmonic processing unit in parallel between the first and second ends of the nth switching unit, not only can the harmonic signals in the first tuner switch be suppressed and the linearity of the first tuner switch be improved, but the problem of different voltage division magnitudes borne by different switching units in the first tuner switch can also be further improved, thereby improving the reliability of the first tuner switch.

[0097] In one specific embodiment, both ends of the first harmonic processing unit are connected to nodes on the first switching network, and both ends of the second harmonic processing unit are connected to nodes on the second switching network.

[0098] As an example, the first terminal of the first harmonic processing unit is connected to the first terminal of the first switching unit, and the second terminal of the first harmonic processing unit is connected to the second terminal of the first switching unit. The first terminal of the second harmonic processing unit is connected to the first terminal of the nth switching unit, and the second terminal of the second harmonic processing unit is connected to the second terminal of the nth switching unit.

[0099] In one specific embodiment, a first end of the first harmonic processing unit is connected to a node in the first switching network, a second end of the first harmonic processing unit is connected to a node outside the first switching network, a first end of the second harmonic processing unit is connected to a node in the second switching network, and a second end of the second harmonic processing unit is connected to a node outside the second switching network.

[0100] As an example, the first end of the first harmonic processing unit is connected to the connection node between the first terminal and the first end of the first switching unit. The second end of the first harmonic processing unit is connected to the connection node between the second end of the fourth switching unit and the first end of the fifth switching unit. The first end of the second harmonic processing unit is connected to the connection node between the first end of the nth switching unit and the second end of the (n-1)th switching unit. The second end of the second harmonic processing unit is connected to the connection node between the first end of the (n-5)th switching unit and the second end of the (n-4)th switching unit.

[0101] In one specific embodiment, reference is made to the following Figure 8 As shown, the first harmonic processing unit includes a first diode M1, a second diode M2, a first tuning resistor R1, and a second tuning resistor R2. The first terminal of the first tuning resistor R1 is connected to the cathode of the first diode M1 and then to the first terminal of the first harmonic processing unit. The second terminal of the second tuning resistor R2 is connected to the cathode of the second diode M2 ​​and then to the second terminal of the first harmonic processing unit. The second terminal of the first tuning resistor is connected to the first terminal of the second tuning resistor. The anode of the first diode is connected to the second terminal of the first tuning resistor. The anode of the second diode M2 ​​is connected to the first terminal of the second tuning resistor R2.

[0102] In one specific embodiment, the second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor (not shown in the figure). The first terminal of the third tuning resistor is connected to the cathode of the third diode and then to the first terminal of the second harmonic processing unit. The second terminal of the fourth tuning resistor is connected to the cathode of the fourth diode and then to the second terminal of the second harmonic processing unit. The second terminal of the third tuning resistor is connected to the first terminal of the fourth tuning resistor. The anode of the third diode is connected to the second terminal of the third tuning resistor, and the anode of the fourth diode is connected to the first terminal of the fourth tuning resistor. It should be noted that a detailed structural diagram of the second harmonic processing unit in this embodiment can be found in [reference needed]. Figure 8 A schematic diagram of the first harmonic processing unit.

[0103] In one specific embodiment, reference is made to the following Figure 9As shown, the first harmonic processing unit includes a first diode M1, a second diode M2, a first tuning resistor R1, and a second tuning resistor R2. A first node connecting the cathode of the first diode and the anode of the second diode is connected to a first end of the first resistor. A second end of the first resistor is connected to a first end of the first harmonic processing unit. A second node connecting the anode of the first diode and the cathode of the second diode is connected to a first end of the second resistor. A second end of the second resistor is connected to a second end of the second harmonic processing unit.

[0104] In one specific embodiment, the second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor (not shown in the figure). A first node connecting the cathode of the third diode and the anode of the fourth diode is connected to a first terminal of the third resistor. The second terminal of the third resistor is connected to a first terminal of the second harmonic processing unit. A second node connecting the anode of the third diode and the cathode of the fourth diode is connected to a first terminal of the fourth resistor. The second terminal of the fourth resistor is connected to a second terminal of the second harmonic processing unit. It should be noted that a detailed structural diagram of the second harmonic processing unit in this embodiment can be found in [reference needed]. Figure 9 A schematic diagram of the first harmonic processing unit.

[0105] In another specific embodiment, the first diode, the second diode, the third diode, and the fourth diode can all be replaced by field-effect transistors, that is, the function of diodes can also be achieved by field-effect transistors.

[0106] In one specific embodiment, the first harmonic processing unit and the second harmonic processing unit are configured to generate a first suppression signal, the first suppression signal being phase-differentiated from the harmonic signal in the first tuner switch by [±170°~±190°], and the amplitude of the first suppression signal can be set according to actual conditions.

[0107] As an example, the suppression effect on the harmonic signal in the first tuner switch is better when the phase of the first suppression signal differs from the phase of the harmonic signal in the first tuner switch by ±180°. Furthermore, the suppression effect on the harmonic signal in the first tuner switch is even better when the phase of the first suppression signal differs from the phase of the harmonic signal in the first tuner switch by ±180° and their amplitudes are exactly the same. Understandably, this embodiment generates a first suppression signal with a phase difference of [±170°~±190°] from the harmonic signal in the first tuner switch through the first harmonic processing unit and the second harmonic processing unit. The first suppression signal and the harmonic signal in the first tuner switch can at least partially cancel each other out, thereby suppressing the harmonic signal in the first tuner switch and improving linearity.

[0108] Optionally, the harmonic signal in the first tuner switch can be a second-order harmonic signal, a third-order harmonic signal, or a harmonic signal of any order. This application does not specifically limit the type of harmonic signal.

[0109] As an example, when the radio frequency signal passes through the first diode M1 and the second diode M2, a self-biasing voltage is generated. Based on the directivity of the transistor, this self-biasing voltage causes the first diode M1 and the second diode M2 ​​to work alternately. In this working state, the current of the first diode M1 and the second diode M2 ​​changes with time. The current superimposed by the two will generate a first suppression signal that is out of phase with the radio frequency signal on the switching branch. Through this first suppression signal, the harmonic signal on the switching branch can be suppressed or eliminated, thereby improving the linearity of the circuit.

[0110] In one specific embodiment, when the first diode is on, the second diode is off, and when the second diode is on, the first diode is off. The first signal formed when the radio frequency signal passes through the first diode and the second signal formed when the radio frequency signal passes through the second diode are superimposed to form the first suppression signal. It should be noted that in this implementation, the first diode and the second diode can generate self-bias without the need for additional bias voltage to conduct at a specific time. Thus, only one diode is on at any given time, while the other transistor is off. That is, the first diode is on for half a cycle, and the second diode is on for the other half cycle. The first signal formed when the radio frequency signal passes through the first diode and the second signal formed when the radio frequency signal passes through the second diode are superimposed to form a complete first suppression signal. The first suppression signal is used to suppress harmonic signals in the first tuner switch, thereby improving the linearity of the circuit.

[0111] It should be noted that the working mechanism and function of the third and fourth diodes are the same as those of the first and second diodes, and will not be elaborated upon here.

[0112] In one specific embodiment, the first tuning resistor R1 and the second tuning resistor R2 in the first harmonic processing unit are used to protect the first diode M1 and the second diode M2 ​​from being damaged by excessive voltage. This embodiment protects the first diode M1 and the second diode M2 ​​from being damaged by excessive voltage by connecting the first resistor R1 in parallel with the first diode M1, connecting the second tuning resistor R2 in parallel with the second diode M2, and connecting the second ends of the first tuning resistor R1 and the second tuning resistor R2, thereby improving the reliability of the first diode M1 and the second diode M2.

[0113] It should be noted that the working mechanism and function of the third and fourth tuning resistors in the second harmonic processing unit are the same as those of the first and second tuning resistors, and will not be elaborated here.

[0114] In one specific embodiment, reference is made to the following Figure 10As shown, the first harmonic processing unit includes a first transistor N1 and a second transistor N2; the first terminal of the first transistor is connected to the first terminal of the first harmonic processing unit, the second terminal of the first transistor is connected to the first terminal of the second transistor, and the second terminal of the second transistor is connected to the second terminal of the first harmonic processing unit. As an example, both the first transistor and the second transistor are first diodes, with the first terminal of the first transistor and the first terminal of the second transistor being the positive terminal of the first diode, and the second terminal of the first transistor and the second terminal of the second transistor being the negative terminal of the first diode. In this embodiment, the two first diodes are connected in reverse. When a bias voltage is applied to the two first diodes, the two first diodes can be equivalent to a capacitor with a continuously changing capacitance. When the radio frequency signal passes through the first harmonic processing unit, the two first diodes can jointly generate a first suppression signal, which can suppress harmonic signals in the radio frequency signal. In a specific embodiment, the second harmonic processing unit includes a third transistor and a fourth transistor (not shown in the figure); the first terminal of the third transistor is connected to the first terminal of the second harmonic processing unit, the second terminal of the third transistor is connected to the first terminal of the fourth transistor, and the second terminal of the fourth transistor is connected to the second terminal of the second harmonic processing unit. As an example, both the third and fourth transistors are second diodes. The first terminals of the third and fourth transistors are the positive terminals of the second diodes, and the second terminals of the third and fourth transistors are the negative terminals of the second diodes. In this embodiment, the two second diodes are connected in reverse. When a bias voltage is applied to the two second diodes, they can be equivalent to a capacitor with a continuously changing capacitance. When the radio frequency signal passes through the second harmonic processing unit, the two second diodes can jointly generate a first suppression signal, which can suppress harmonic signals in the radio frequency signal. It should be noted that the specific structural diagrams of the third and fourth transistors of the second harmonic processing unit in this embodiment can be found in [reference needed]. Figure 10 A schematic diagram of the first transistor N1 and the second transistor N2 in the first harmonic processing unit.

[0115] In one specific embodiment, each of the switching units includes at least one field-effect transistor (FET), the gate of the switching unit is the bias control terminal of the switching unit, the source of the switching unit is the first terminal of the switching unit, and the drain of the switching unit is the second terminal of the switching unit. In n switching units, the drain of the preceding switching unit is connected to the source of the following switching unit. As an example, each of the switching units includes at least one FET, and in n switching units, the drain of the preceding switching unit is connected to the source of the following switching unit. As an example, in the n switching units, the source of the first tuner switching unit is connected to the first terminal, the drain of the first tuner switching unit is connected to the source of the second switching unit, the drain of the (n-1)th switching unit is connected to the source of the nth switching unit, and the drain of the Nth switching unit is connected to the second terminal, where n is a positive integer. Since the drain of the previous switch unit is directly connected to the source of the next switch unit in the n switch units, the connection node between two adjacent switch units is either the drain of the previous switch unit or the source of the next switch unit.

[0116] This embodiment also provides a radio frequency module, as shown below. Figure 11 As shown, an antenna tuning circuit and an RF front-end circuit are included. The antenna tuning circuit includes a first switch 201, and the RF front-end circuit includes a second switch 202. The first switch 201 is connected between the antenna port and ground (GND). The first switch 201 includes a third switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the third switch branch, at least one first harmonic processing unit, and at least one second harmonic processing unit. The first to third switch units starting from the first terminal of the third switch branch form a first switch network, and the (n-2)th to the nth switch units form a second switch network, where n is greater than or equal to 6. The first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network.

[0117] In one specific embodiment, at least one end of the first harmonic processing unit 11 is connected to the first switching network 10. That is, the first harmonic processing unit 11 can be connected at one end to a node on the first switching network 10 and at the other end to other nodes on the third switching branch. Alternatively, both ends of the first harmonic processing unit 11 can be connected to nodes on the first switching network 10. Similarly, at least one end of the second harmonic processing unit 21 is connected to the second switching network 20. That is, the second harmonic processing unit 21 can be connected at one end to a node on the first switching network 20 and at the other end to other nodes on the third switching branch. Alternatively, both ends of the second harmonic processing unit 21 can be connected to nodes on the second switching network 20.

[0118] The first harmonic processing unit and the second harmonic processing unit can both be composed of diodes, transistors or MOS capacitors.

[0119] In one specific embodiment, when the first switch 201 includes multiple first harmonic processing units, the circuit structure of each first harmonic processing unit is identical. For example, the circuit structures of the first harmonic processing unit 11 and the first harmonic processing unit 12 are identical. Both the first harmonic processing unit 11 and the first harmonic processing unit 12 are composed of diodes.

[0120] Alternatively, each of the first harmonic processing units can be different. For example, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different. The first harmonic processing unit is composed of diodes, and the second harmonic processing unit is composed of MOS capacitors.

[0121] It should be noted that when the first switch 201 includes multiple second harmonic processing units, the implementation of the second harmonic processing unit 21 is the same as that of the first harmonic processing unit described above, and will not be described redundantly here.

[0122] In one specific embodiment, the first harmonic processing unit 11 and the second harmonic processing unit 21 have the same circuit structure. For example, both the first harmonic processing unit and the second harmonic processing unit are composed of diodes.

[0123] In one specific embodiment, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different. The first harmonic processing unit is composed of diodes, and the second harmonic processing unit is composed of MOS capacitors.

[0124] The second switch 202 is connected between any two different nodes on the signal transmission path of the radio frequency front-end circuit. The second switch includes a fourth switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit, and at least one sixth harmonic processing unit. The first to third switch units starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the (n-2)th to the nth switch units constitute a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0125] In one specific embodiment, at least one end of the fifth harmonic processing unit is connected to the fifth switching network. That is, the fifth harmonic processing unit can be connected at one end to a node on the fifth switching network and at the other end to other nodes on the fourth switching branch, or both ends of the fifth harmonic processing unit can be connected to nodes on the fifth switching network. Similarly, at least one end of the sixth harmonic processing unit is connected to the sixth switching network. That is, the sixth harmonic processing unit can be connected at one end to a node on the sixth switching network and at the other end to other nodes on the fourth switching branch, or both ends of the sixth harmonic processing unit can be connected to nodes on the sixth switching network.

[0126] In one specific embodiment, the fifth harmonic processing unit and the sixth harmonic processing unit can be composed of diodes, transistors (e.g., MOSFETs), or MOS capacitors. The circuit structures of the fifth harmonic processing unit and the sixth harmonic processing unit are identical. For example, both the fifth harmonic processing unit and the sixth harmonic processing unit can be composed of diodes. Alternatively, the circuit structures of the fifth harmonic processing unit and the sixth harmonic processing unit can be different; one can be composed of diodes, and the other of the fifth harmonic processing units can be composed of MOS capacitors.

[0127] In one specific embodiment, when the second switch 202 includes two or more fifth harmonic processing units, the circuit structure of each fifth harmonic processing unit is identical. For example, each fifth harmonic processing unit is composed of diodes. Alternatively, each fifth harmonic processing unit may be different; for example, some fifth harmonic processing units are composed of diodes, while others are composed of MOS capacitors.

[0128] It should be noted that when the second switch 100 includes two or more sixth harmonic processing units, the implementation method of the sixth harmonic processing unit is the same as that of the fifth harmonic processing unit described above, and will not be repeated here.

[0129] It should be noted that the connection method, structure and function of the first harmonic processing unit, the second harmonic processing unit, the fifth harmonic processing unit and the sixth harmonic processing unit in this embodiment are similar to those of the first harmonic processing unit and the second harmonic processing unit in the above embodiment, and will not be described in detail here.

[0130] In one specific embodiment, when the first switch 201 and the second switch 202 are configured to support the same radio frequency signal, the total number of the first harmonic processing units and the second harmonic processing units on the first switch 201 is different from the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

[0131] In at least one embodiment, the first switch 201 and the second switch 202 are two switching circuits connected on the same radio frequency path. The first switch 201 and the second switch 202 can be directly connected, or other components can be connected between them. The first switch 201 is mainly connected to the antenna port and can be used to reduce losses caused by impedance mismatch or to improve the efficiency of the antenna port. The second switch 202 can be a switching switch or band selection switch connected to the receive path RX or transmit path TX, or it can be an antenna switch (ASM switch) connected to the antenna port.

[0132] In at least one embodiment, since the output of the second switch 202 needs to meet a 50-ohm impedance matching requirement, while the impedance of the first switch 201 is often variable and may be greater than 50 ohms, the power of the RF signal transmitted on the first switch 201 is often greater than the power of the RF signal transmitted on the second switch 202. Therefore, the power of the harmonic signals that the first switch 201 needs to suppress is often different from the power of the harmonic signals that the second switch 202 needs to suppress. Therefore, when the first switch 201 and the second switch 202 are configured to support the same RF signal, by configuring the total number of the first and second harmonic processing units on the first switch 201 to be different from the total number of the fifth and sixth harmonic processing units on the second switch, it is possible to effectively suppress harmonic signals of different power levels on different switches in the RF path, thereby improving the linearity and performance of the RF module.

[0133] In one specific embodiment, the radio frequency module includes multiple first harmonic processing units, multiple second harmonic processing units, multiple fourth harmonic processing units, and multiple fourth harmonic processing units. The first and / or second ends of different first harmonic processing units are respectively connected to different nodes on the transmission path of the first switching network; the first and / or second ends of different second harmonic processing units are respectively connected to different nodes on the transmission path of the second switching network; the first and / or second ends of different fifth harmonic processing units are respectively connected to different nodes on the transmission path of the fifth switching network; and the first and / or second ends of different sixth harmonic processing units are respectively connected to different nodes on the transmission path of the sixth switching network.

[0134] In this embodiment, a harmonic processing unit is defined as a harmonic processing unit connected to the same two nodes of the first switch 201. Of the two first harmonic processing units, at least one end of one of the first harmonic processing units and the other first harmonic processing unit is connected to different nodes. For example: Refer to... Figure 4 As shown, harmonic processing unit 111 and harmonic processing unit 112 are connected in parallel across the two ends of switching unit K1. Harmonic processing unit 111 and harmonic processing unit 112 are equivalent to a first harmonic processing unit 11. Compared to Figure 3 The first harmonic processing unit 11 in the middle, Figure 4 The first harmonic processing unit 11 in the text can be understood as a harmonic processing unit with an increased area.

[0135] It should be noted that the number of the second, fifth, and sixth harmonic processing units is determined in the same way as that of the first harmonic processing unit, and will not be elaborated upon here.

[0136] In one specific embodiment, when the first switch 201 and the second switch 202 are configured to support the same radio frequency signal, the total number of the first harmonic processing unit and the second harmonic processing unit 200 on the first switch 201 is greater than the total number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch 202.

[0137] In one specific embodiment, since the power of the radio frequency signal transmitted by the first switch is greater than that transmitted by the second switch, by setting the number of the first harmonic processing units and the second harmonic processing units on the first switch to be greater than the number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch, it is possible to effectively suppress harmonic signals of different power levels on different switches in the radio frequency path without affecting the performance of the radio frequency module, thereby improving the linearity and performance of the radio frequency module.

[0138] In this embodiment, the number of the first harmonic processing unit and the second harmonic processing unit is greater than the number of the fifth harmonic processing unit and the sixth harmonic processing unit, which can generate harmonics with opposite phases to cancel the harmonic signal with higher power on the first switch.

[0139] In one specific embodiment, when the first switch and the second switch are configured to support the same radio frequency signal, the area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch is greater than the total size of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch.

[0140] In one specific embodiment, since the power of the radio frequency signal transmitted by the first switch is greater than that transmitted by the second switch, by setting the area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch to be larger than the area of ​​the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch, harmonic signals of different power levels on different switches in the radio frequency path can be effectively suppressed, thereby improving the linearity and performance of the radio frequency module.

[0141] In this embodiment, the area of ​​the first harmonic processing unit and / or the second harmonic processing unit is larger than the area of ​​the fifth harmonic processing unit and / or the sixth harmonic processing unit, which can generate harmonics with opposite phase to cancel the larger power harmonic signal on the first tuner switch 100.

[0142] In a specific application scenario, the first terminal of the first switch is connected to the antenna port, the second terminal of the resonant switch circuit is grounded, the first terminal of the second switch is connected to the antenna port, and the second terminal of the second switch is connected to the filter.

[0143] In at least one embodiment, the first switch is located on a path close to the antenna port. The first switch and the antenna port can be directly connected, or other components (e.g., matching elements) can be present between them. The second switch can be an antenna switch, with a first end connected to the antenna port and a second end connected to an amplifier. The antenna switch and the antenna port can be directly connected, or other components (e.g., matching elements) can be present between them. The antenna switch and the filter can be directly connected, or other components (e.g., filtering elements or matching elements) can be present between them. The amplifier can be a low-noise amplifier on the receiving path or a power amplifier on the transmitting path.

[0144] In a specific application scenario, the first terminal of the first switch is connected to the antenna port, the second terminal of the first switch is grounded, the first terminal of the second switch is connected to the first filter, and the second terminal of the second switch is connected to the amplifier.

[0145] In at least one embodiment, the first harmonic processing unit and the second harmonic processing unit connected to the first switch are mainly used to suppress harmonic signals within the operating frequency band. The fourth harmonic processing unit and the fifth harmonic processing unit connected to the second switch are mainly used to suppress harmonic signals within the operating frequency band. The first filter is mainly used to suppress harmonic signals outside the operating frequency band.

[0146] In at least one embodiment, the first switch is located on a path close to the antenna port. The first switch and the antenna port can be directly connected, or other components (e.g., matching elements) can be present between them. The second switch can be a band selection switch, with a first terminal connected to a first filter and a second terminal connected to an amplifier. The band selection switch and the first filter can be directly connected, or other components (e.g., matching elements) can be present between them. The band selection switch and the amplifier can be directly connected, or other components (e.g., matching elements) can be present between them and the antenna port. The amplifier can be a low-noise amplifier on the receiving path or a power amplifier on the transmitting path.

[0147] This embodiment also provides an RF module, including an RF front-end circuit. The RF front-end circuit includes a second switch, the second switch including a fifth switch branch, the fifth switch branch including a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fifth switch branch, n first resistors, n first resistors connected in parallel with the n switch units, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit. The first to third switch units starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the (n-2)th to the nth switch units constitute a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0148] It should be noted that the specific implementation methods and functions of the second switch, the fifth harmonic processing unit and the sixth harmonic processing unit in this embodiment are the same as those in the above embodiments, and will not be described redundantly here.

[0149] In this embodiment, an RF module includes an RF front-end circuit. The RF front-end circuit includes a second switch, which includes a fifth switch branch. The fifth switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fifth switch branch, n first resistors, and n first resistors connected in parallel with the n switch units. It also includes at least one fifth harmonic processing unit and at least one sixth harmonic processing unit. The first to third switch units, starting from the first terminal of the fifth switch branch, form a fifth switch network, and the (n-2)th to the nth switch units form a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. This embodiment, through the combined action of the n first resistors, the fifth harmonic processing unit, and the sixth harmonic processing unit, can not only improve the uneven distribution of voltage swing on the switch link but also effectively suppress or eliminate harmonic signals at different power levels, thereby improving the linearity of the second switch and optimizing the overall performance of the RF module.

[0150] In one specific embodiment, the second switch is connected in series in the radio frequency signal transmission path.

[0151] In one specific embodiment, the second switch is a radio frequency antenna switch, with a first terminal connected to an antenna port and a second terminal connected to a filter; or, the second switch is a frequency band selection switch, with a first terminal connected to a filter and a second terminal connected to an amplifier.

[0152] In at least one specific embodiment, the second switch is a radio frequency (RF) antenna switch, with a first end connected to an antenna port and a second end connected to a filter. The RF antenna switch and the antenna port can be directly connected, or other components (e.g., matching elements) can be present between them. Similarly, the RF antenna switch and the filter can be directly connected, or other components (e.g., filtering elements or matching elements) can be present between them. The filter can be a filter on the receiving path or a filter on the transmitting path.

[0153] In at least one specific embodiment, the second switch can be a frequency band selection switch, with a first terminal connected to a first filter and a second terminal connected to an amplifier. The frequency band selection switch and the first filter can be directly connected, or other components (e.g., matching elements) can be present between them. Similarly, the frequency band selection switch and the amplifier can be directly connected, or other components (e.g., matching elements) can be present between the frequency band selection switch and the antenna port. The amplifier can be a low-noise amplifier on the receiving path or a power amplifier on the transmitting path.

[0154] This embodiment also provides an RF front-end module, characterized in that it includes the second switching circuit described in the above embodiment.

[0155] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A radio frequency module, characterized in that, The device includes an antenna tuning circuit, comprising a first tuner switch, a first terminal of which is configured to be connected to an antenna port, and a second terminal of which is configured to be grounded. The first tuner switch includes a first switch branch, comprising a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the first switch branch, n first resistors, and n first resistors connected in parallel with the n switch units, at least one first harmonic processing unit, and at least one second harmonic processing unit. Switch units 1 to 3 from the first terminal of the first switch branch form a first switch network, and switch units (n-2) to n form a second switch network, where n is a positive integer greater than or equal to 6. At least one end of each of the first and second harmonic processing units is connected to the first switch network.

2. The radio frequency module as described in claim 1, characterized in that, The number of the first harmonic processing unit is different from the number of the second harmonic processing unit.

3. The radio frequency module as described in claim 2, characterized in that, The number of the first harmonic processing units is greater than the number of the second harmonic processing units.

4. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is a single-pole multi-throw switch. The first tuner switch also includes a third terminal, which is connected to the second terminal of the first tuner switch and then grounded.

5. The radio frequency module as described in claim 1, characterized in that, The antenna tuning circuit further includes a second tuner switch, the first end of which is configured to be connected to the antenna port, and the second end of which is configured to be grounded. The second tuner switch includes a second switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the second switch branch, n second resistors, and n second resistors connected in parallel with the n switch units in a one-to-one correspondence. It also includes at least one third harmonic processing unit and at least one fourth harmonic processing unit. The first to third switch units starting from the first terminal of the second switch branch constitute a third switch network, and the (n-2)th to the nth switch units constitute a fourth switch network, where n is greater than or equal to 6. At least one end of each third harmonic processing unit is connected to the third switch network, and at least one end of each fourth harmonic processing unit is connected to the fourth switch network.

6. The radio frequency module as described in claim 5, characterized in that, The first tuner switch is configured to support radio frequency signal transmission in a first frequency band, and the second tuner switch is configured to support radio frequency signal transmission in a second frequency band, wherein the first frequency band is greater than the second frequency band; The total area of ​​the first harmonic processing unit and the second harmonic processing unit is greater than the total area of ​​the third harmonic processing unit and the fourth harmonic processing unit.

7. The radio frequency module as described in claim 5, characterized in that, The first tuner switch is configured to suppress harmonic signals of the first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; The second tuner switch is configured to suppress harmonic signals of the second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; Wherein, the first power is less than or equal to the second power, and X is less than or equal to Y.

8. The radio frequency module as described in claim 1, characterized in that, When the first tuner switch is configured to support radio frequency signal transmission in the first frequency band, the area range of one first harmonic processing unit is [20um2, 50um2], the area range of one second harmonic processing unit is [20um2, 50um2], and the range of the first frequency band is [0, 900MHz].

9. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is configured to support radio frequency signal transmission in the second frequency band. The area of ​​the first harmonic processing unit is [30um2, 80um2], and the area of ​​the second harmonic processing unit is [30um2, 80um2]. The range of the second frequency band is [900MHz, 1880MHz].

10. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is configured to suppress a first harmonic signal, wherein the power of the first harmonic signal is less than or equal to 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit ranges from [1,3].

11. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is configured to suppress a second harmonic signal, wherein the power of the second harmonic signal is greater than 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit ranges from [3,5].

12. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is configured to suppress a third harmonic signal, wherein the power of the third harmonic signal is less than or equal to 35 dBm, the number of the first harmonic processing unit is 1, and the number of the second harmonic processing unit is 1.

13. The radio frequency module as described in claim 1, characterized in that, The first tuner switch is configured to suppress a fourth harmonic signal with a power range of [43dBm, 48dBm]. The number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 2.

14. The radio frequency module as described in claim 1, characterized in that, The switching unit is a first field-effect transistor, the gate of the first field-effect transistor is configured to be connected to a bias control terminal, the first end of the first resistor is connected to the source of the field-effect transistor, and the first end of the first resistor is connected to the drain of the field-effect transistor.

15. The radio frequency module as described in claim 14, characterized in that, The first tuner switch further includes a second field-effect transistor, the source of which is connected to the body of the first field-effect transistor, and the gate of which is connected to the drain and, in turn, to the gate of the first field-effect transistor.

16. The radio frequency module as described in claim 15, characterized in that, The first field-effect transistor is an NMOS transistor, and the second field-effect transistor is a PMOS transistor.

17. The radio frequency module as described in claim 1, characterized in that, The radio frequency module includes multiple first harmonic processing units and multiple second harmonic processing units. At least one end of each of the first harmonic processing units is connected to a different node on the transmission path of the first switching network, and at least one end of each of the second harmonic processing units is connected to a different node on the transmission path of the second switching network.

18. The radio frequency module as described in claim 17, characterized in that, Both ends of the first harmonic processing unit are connected to nodes on the first switching network, and both ends of the second harmonic processing unit are connected to nodes on the second switching network. Alternatively, the first end of the first harmonic processing unit is connected to a node in the first switching network, the second end of the first harmonic processing unit is connected to a node outside the first switching network, the first end of the second harmonic processing unit is connected to a node in the second switching network, and the second end of the second harmonic processing unit is connected to a node outside the second switching network.

19. The radio frequency module as described in claim 1, characterized in that, The first harmonic processing unit includes a first diode, a second diode, a first tuning resistor, and a second tuning resistor. The first terminal of the first tuning resistor is connected to the cathode of the first diode and then to the first terminal of the first harmonic processing unit. The second terminal of the second tuning resistor is connected to the cathode of the second diode and then to the second terminal of the first harmonic processing unit. The second terminal of the first tuning resistor is connected to the first terminal of the second tuning resistor. The anode of the first diode is connected to the second terminal of the first tuning resistor. The anode of the second diode is connected to the first terminal of the second tuning resistor. The second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor. The first terminal of the third tuning resistor is connected to the cathode of the third diode and then to the first terminal of the second harmonic processing unit. The second terminal of the fourth tuning resistor is connected to the cathode of the fourth diode and then to the second terminal of the second harmonic processing unit. The second terminal of the third tuning resistor is connected to the first terminal of the fourth tuning resistor. The anode of the third diode is connected to the second terminal of the third tuning resistor. The anode of the fourth diode is connected to the first terminal of the fourth tuning resistor.

20. The radio frequency module as described in claim 1, characterized in that, The first harmonic processing unit includes a first diode, a second diode, a first tuning resistor, and a second tuning resistor. A first node connecting the cathode of the first diode and the anode of the second diode is connected to a first end of the first tuning resistor. A second end of the first tuning resistor is connected to a first end of the first harmonic processing unit. A second node connecting the anode of the first diode and the cathode of the second diode is connected to a first end of the second tuning resistor. A second end of the second tuning resistor is connected to a second end of the second harmonic processing unit. The second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor. A first node connecting the cathode of the third diode and the anode of the fourth diode is connected to a first end of the third tuning resistor. A second end of the third tuning resistor is connected to a first end of the second harmonic processing unit. A second node connecting the anode of the third diode and the cathode of the fourth diode is connected to a first end of the fourth tuning resistor. A second end of the fourth tuning resistor is connected to a second end of the second harmonic processing unit.

21. The radio frequency module as described in claim 1, characterized in that, The first harmonic processing unit includes a first transistor and a second transistor; a first terminal of the first transistor is connected to a first terminal of the first harmonic processing unit, a second terminal of the first transistor is connected to a first terminal of the second transistor, and a second terminal of the second transistor is connected to a second terminal of the first harmonic processing unit. The second harmonic processing unit includes a third transistor and a fourth transistor; the first terminal of the third transistor is connected to the first terminal of the second harmonic processing unit, the second terminal of the third transistor is connected to the first terminal of the fourth transistor, and the second terminal of the fourth transistor is connected to the second terminal of the second harmonic processing unit.

22. The radio frequency module as described in claim 21, characterized in that, Both the first transistor and the second transistor are first diodes, with the first terminal of the first transistor and the first terminal of the second transistor being the positive terminal of the first diode, and the second terminal of the first transistor and the second terminal of the second transistor being the negative terminal of the first diode; both the third transistor and the fourth transistor are second diodes, with the first terminal of the third transistor and the first terminal of the fourth transistor being the positive terminal of the second diode, and the second terminal of the third transistor and the second terminal of the fourth transistor being the negative terminal of the second diode.

23. A radio frequency module, characterized in that, It includes an antenna tuning circuit and a radio frequency front-end circuit, wherein the antenna tuning circuit includes a first switch and the radio frequency front-end circuit includes a second switch; The first switch is connected between the antenna port and ground. The first switch includes a third switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the third switch branch, at least one first harmonic processing unit, and at least one second harmonic processing unit. The first to third switch units starting from the first terminal form a first switch network, and the (n-2)th to nth switch units form a second switch network, where n is greater than or equal to 6. The first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network. The second switch is connected between any two different nodes on the signal transmission path of the RF front-end circuit. The second switch includes a fourth switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit, and at least one sixth harmonic processing unit. The first to third switch units starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the (n-2)th to the nth switch units constitute a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. When the first switch and the second switch are configured to support the same radio frequency signal transmission, the total number of the first harmonic processing units and the second harmonic processing units on the first switch is different from the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

24. The radio frequency module as described in claim 23, characterized in that, When the first switch and the second switch are configured to support the same radio frequency signal, the total number of the first harmonic processing units and the second harmonic processing units on the first switch is greater than the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

25. The radio frequency module as described in claim 23, characterized in that, When the first switch and the second switch are configured to support the same radio frequency signal, the area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch is greater than the area of ​​the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch.

26. The radio frequency module as described in claim 23, characterized in that, The first terminal of the first switch is connected to the antenna port, the second terminal of the first switch is grounded, the first terminal of the second switch is connected to the antenna port, and the second terminal of the second switch is connected to the first filter.

27. The radio frequency module as described in claim 23, characterized in that, The first terminal of the first switch is connected to the antenna port, the second terminal of the first switch is grounded, the first terminal of the second switch is connected to the first filter, and the second terminal of the second switch is connected to the amplifier.

28. A radio frequency module, characterized in that, The system includes an RF front-end circuit, which includes a second switch. The second switch includes a fifth switch branch, which includes a first terminal, a second terminal, n switch units connected in series between the first terminal and the second terminal of the fifth switch branch, n first resistors, and n first resistors connected in parallel with the n switch units. It also includes at least one fifth harmonic processing unit and at least one sixth harmonic processing unit. The first to third switch units, starting from the first terminal of the fifth switch branch, form a fifth switch network, and the (n-2)th to the nth switch units form a sixth switch network, where n is greater than or equal to 6. The fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

29. The radio frequency module as described in claim 28, characterized in that, The second switch is connected in series in the radio frequency signal transmission path.

30. The radio frequency module as described in claim 29, characterized in that, The second switch is an antenna switch, with its first end connected to an antenna port and its second end connected to a filter; or, the second switch is a frequency band selection switch, with its first end connected to a filter and its second end connected to an amplifier.

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