High-power field effect transistor with heat dissipation chip

Abstract

The utility model discloses a high-power field effect transistor with a heat dissipation chip. The high-power field effect transistor comprises a supporting plate; an adjusting mechanism is arranged on the upper side of the supporting plate, the adjusting mechanism comprises connecting rods, connecting sleeves and lug plates, the connecting rods are arranged on the upper side of the supporting plate, the connecting rods are distributed in an array mode, a cleaning mechanism is arranged on the upper side of the heat dissipation chip body, and the cleaning mechanism comprises an open groove, a connecting block and a cleaning piece. The open grooves are formed in the heat dissipation chip body, and the open grooves are in front-back symmetry about the vertical central axis of the heat dissipation chip body. According to the high-power field effect transistor with the heat dissipation chip, the connecting rods enable the supporting plates and the heat dissipation chip body to be connected together through the connecting sleeves, clamping heat dissipation can be carried out on the supporting plates of different sizes, the application range is wide, the open grooves can prevent the cleaning plate from moving upwards in the moving process, and the limiting effect is achieved; and the moving cleaning sheet can clean the heat dissipation chip body and the upper side of the heat dissipation sheet, so that the heat dissipation effect is enhanced.

Description

Technical Field

[0001] This utility model relates to the field of field-effect transistor technology, specifically a high-power field-effect transistor with a heat dissipation chip. Background Technology

[0002] A field-effect transistor (FET) is a voltage-controlled semiconductor device. FETs operate based on electric field control, using the gate voltage to control the current between the source and drain. It is a voltage-controlled semiconductor device with many advantages, playing a crucial role in electronic circuits. With continuous technological advancements and innovations, the application areas of FETs will continue to expand and deepen.

[0003] Referring to Chinese Patent Publication No. CN218385232U, with the publication date of the publication date being January 24, 2023, a high-power field-effect transistor is disclosed. This high-power field-effect transistor, through the combination of a base plate, an upper heat sink, and an upper heat sink, can enhance the heat dissipation performance of the field-effect transistor body, while also being low in cost. The base plate and the upper heat sink are also convenient for disassembly and assembly on the field-effect transistor body.

[0004] However, during the use of this utility model, it is inconvenient to install heat dissipation when clamping and heat dissipating field effect transistors of different sizes. Moreover, after long-term use, the heat sink is prone to accumulating dust, which will lead to a decrease in heat dissipation effect. Therefore, there is still room for further improvement.

[0005] Therefore, we propose a high-power MOSFET with a heat dissipation chip to solve the problems mentioned above. Utility Model Content

[0006] The purpose of this invention is to provide a high-power field-effect transistor with a heat dissipation chip, in order to solve the problems mentioned in the background art. In the current invention, when using field-effect transistors of different sizes, it is inconvenient to install heat dissipation, and the heat sink is prone to accumulating dust after long-term use, which leads to poor heat dissipation effect. Therefore, there is still room for further improvement.

[0007] To achieve the above objectives, this utility model provides the following technical solution: a high-power field-effect transistor with a heat dissipation chip, comprising: a support plate;

[0008] Also includes:

[0009] An adjustment mechanism is provided on the upper side of the support plate. The adjustment mechanism includes a connecting rod, a connecting sleeve, and an ear plate. The connecting rod is provided on the upper side of the support plate and is distributed in an array.

[0010] The heat dissipation chip body has a cleaning mechanism on its upper side. The cleaning mechanism includes a slot, a connecting block, and a cleaning plate. The slot is opened inside the heat dissipation chip body and is symmetrical about the vertical central axis of the heat dissipation chip body.

[0011] Preferably, a field-effect transistor body is provided on the upper side of the support plate, and a heat dissipation chip body is tightly attached to the upper side of the field-effect transistor body, and a mounting hole is provided inside the heat dissipation chip body.

[0012] Preferably, the mounting holes are arranged in an array, and each mounting hole corresponds to a connecting rod, and the connecting rod is slidably connected to the mounting holes.

[0013] Preferably, the connecting rod is threadedly connected to the connecting sleeve, and the connecting sleeve and the connecting rod correspond one-to-one. The outer side of the connecting sleeve is provided with an ear plate, and the ear plate is symmetrical about the vertical central axis of the connecting sleeve.

[0014] Preferably, a heat sink is provided on the upper side of the heat dissipation chip body, and the heat sink is distributed in an array.

[0015] Preferably, the slot is slidably connected to the connecting block, and the connecting block is located on the lower side of the cleaning plate, and the slot and the connecting block correspond one-to-one.

[0016] Preferably, a cleaning plate is provided on the lower side of the cleaning plate, and the cleaning plates are arranged in an array, and the cleaning plates are in close contact with the heat dissipation chip body and the heat dissipation plate.

[0017] Compared with the prior art, the beneficial effects of this utility model are: the high-power field-effect transistor with heat dissipation chip, the connecting rod connects the support plate and the heat dissipation chip body together through the connecting sleeve, which can clamp and dissipate heat for support plates of different sizes, and has a wide range of applications. The slot can prevent the cleaning plate from moving upward during the movement, and play a limiting role. The moving cleaning plate will clean the upper side of the heat dissipation chip body and the heat dissipation plate, thereby enhancing the heat dissipation effect.

[0018] 1. It is equipped with a connecting rod, mounting holes and a connecting sleeve. The connecting rod connects the support plate and the heat sink chip body together through the connecting sleeve. It can clamp and dissipate heat for support plates of different sizes and has a wide range of applications.

[0019] 2. It is equipped with a heat dissipation chip body, a slot and a connecting block. The slot is opened on the upper side of the heat dissipation chip body. The slot moves within the connecting block. The slot can prevent the cleaning plate from moving upward during the movement and plays a limiting role.

[0020] 3. It is equipped with a heat sink, a cleaning plate, and a cleaning plate. The heat sink and the cleaning plate are slidably connected and closely attached. The moving cleaning plate cleans the heat sink chip body and the upper side of the heat sink, thereby enhancing the heat dissipation effect. Attached Figure Description

[0021] Figure 1 This is a top-view three-dimensional structural diagram of the present invention;

[0022] Figure 2 This utility model Figure 1 Enlarged structural diagram at point A in the middle;

[0023] Figure 3 This is a three-dimensional structural diagram of the present invention viewed from below;

[0024] Figure 4 This is a schematic diagram of the cross-sectional structure of the heat dissipation chip body of this utility model;

[0025] Figure 5 This is a schematic diagram of the connection structure of the connecting rod and connecting sleeve of this utility model.

[0026] In the diagram: 1. Support plate; 2. MOSFET body; 3. Connecting rod; 4. Mounting hole; 5. Heat sink chip body; 6. Connecting sleeve; 7. Ear plate; 8. Heat sink; 9. Slot; 10. Connecting block; 11. Cleaning plate; 12. Cleaning plate. Detailed Implementation

[0027] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model. Specific Implementation Example 1

[0029] This embodiment is a high-power field-effect transistor with a heat dissipation chip.

[0030] like Figure 1 , Figure 2 and Figure 3 As shown, a field-effect transistor body 2 is provided on the upper side of the support plate 1, and a connecting rod 3 is provided on the upper side of the support plate 1. The connecting rods 3 are arranged in an array. A heat sink chip body 5 is tightly attached to the upper side of the field-effect transistor body 2. The heat sink chip body 5 has mounting holes 4 inside. The mounting holes 4 are arranged in an array. The mounting holes 4 correspond one-to-one with the connecting rods 3. The connecting rods 3 are slidably connected to the mounting holes 4. The connecting rods 3 are threadedly connected to the connecting sleeves 6. The connecting sleeves 6 correspond one-to-one with the connecting rods 3. An ear plate 7 is provided on the outer side of the connecting sleeve 6. The ear plate 7 is symmetrical about the vertical central axis of the connecting sleeve 6.

[0031] like Figure 1 , Figure 3 , Figure 4 and Figure 5 As shown, a heat sink 8 is provided on the upper side of the heat sink chip body 5. The heat sink 8 is arranged in an array. A slot 9 is provided inside the heat sink chip body 5. The slot 9 is symmetrical about the vertical central axis of the heat sink chip body 5. The slot 9 is slidably connected to the connecting block 10. The connecting block 10 is provided on the lower side of the cleaning plate 11. The slot 9 and the connecting block 10 correspond one-to-one. A cleaning plate 12 is provided on the lower side of the cleaning plate 11. The cleaning plate 12 is arranged in an array. The cleaning plate 12 is in close contact with both the heat sink chip body 5 and the heat sink 8.

[0032] It should be noted that after placing the MOSFET body 2 on the upper side of the support plate 1, and then placing the heat sink chip body 5 on the upper side of the MOSFET body 2, the MOSFET body 2 and the heat sink chip body 5 can be tightly fitted together. The upper side of the heat sink chip body 5 is provided with heat sinks 8, which can enhance the heat dissipation effect. Specific Implementation Example 2

[0034] This embodiment is designed to address the issue that the size and specifications of the field-effect transistor body 2 are limited by the snap-fit ​​connection method, resulting in a narrow range of applications.

[0035] like Figure 1 , Figure 2 and Figure 3 As shown, after the heat dissipation chip body 5 is placed on the upper side of the support plate 1, the connecting sleeve 6 is threaded together with the connecting rod 3. At this time, the support plate 1 and the heat dissipation chip body 5 are connected together through the connecting sleeve 6. It can clamp and dissipate heat for support plates 1 of different sizes, and has a wide range of applications. In addition, the outer side of the connecting sleeve 6 is provided with an ear plate 7. The presence of the ear plate 7 makes it easy to rotate the connecting sleeve 6, which is more labor-saving. Specific Implementation Example 3

[0037] This embodiment is designed to address the problem that the heat dissipation chip body 5 and the heat sink 8 are prone to dust accumulation, which leads to poor heat dissipation performance.

[0038] like Figure 1 , Figure 3 , Figure 4 and Figure 5 As shown, a slot 9 is provided on the upper side of the heat dissipation chip body 5. The slot 9 moves within the connecting block 10. Therefore, the slot 9 can prevent stubborn dust from remaining on the upper side of the heat dissipation chip body 5. When the cleaning plate 11 moves with the cleaning plate 11, the cleaning plate 11 and the cleaning plate 12 move upward, avoiding stubborn dust residue during cleaning. The connecting block 10 limits the cleaning plate 11. In addition, the heat dissipation fin 8 and the cleaning plate 12 are slidably connected and tightly fitted. Therefore, the moving cleaning plate 12 will clean the upper side of the heat dissipation chip body 5 and the heat dissipation fin 8, thereby enhancing the heat dissipation effect.

[0039] The contents not described in detail in this specification are existing technologies known to those skilled in the art. All standard parts used in this utility model can be purchased from the market, and irregular parts can be customized according to the description and drawings. The specific connection methods of each part adopt conventional methods such as bolts, rivets, and welding that are mature in the prior art. The machinery, parts and equipment adopt conventional models in the prior art, and the circuit connection adopts conventional connection methods in the prior art, which will not be described in detail here.

[0040] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A high-power field-effect transistor with a heat dissipation chip, comprising: Support plate (1); Its characteristic is that it further includes: An adjustment mechanism is provided on the upper side of the support plate (1), wherein the adjustment mechanism includes a connecting rod (3), a connecting sleeve (6) and an ear plate (7). The connecting rod (3) is provided on the upper side of the support plate (1) and the connecting rods (3) are arranged in an array. The heat dissipation chip body (5) has a cleaning mechanism on its upper side. The cleaning mechanism includes a slot (9), a connecting block (10), and a cleaning plate (12). The slot (9) is opened inside the heat dissipation chip body (5) and is symmetrical about the vertical central axis of the heat dissipation chip body (5).

2. A high-power MOSFET with a heat dissipation chip according to claim 1, characterized in that: The upper side of the support plate (1) is provided with a field effect transistor body (2), and the upper side of the field effect transistor body (2) is closely attached to the heat dissipation chip body (5), and the heat dissipation chip body (5) has an installation hole (4) inside.

3. A high-power MOSFET with a heat dissipation chip according to claim 2, characterized in that: The mounting holes (4) are arranged in an array, and the mounting holes (4) correspond one-to-one with the connecting rods (3), and the connecting rods (3) are slidably connected to the mounting holes (4).

4. A high-power MOSFET with a heat dissipation chip according to claim 3, characterized in that: The connecting rod (3) is threadedly connected to the connecting sleeve (6), and the connecting sleeve (6) corresponds to the connecting rod (3) one by one. The outer side of the connecting sleeve (6) is provided with an ear plate (7), and the ear plate (7) is symmetrical about the vertical central axis of the connecting sleeve (6).

5. A high-power MOSFET with a heat dissipation chip according to claim 1, characterized in that: The heat dissipation chip body (5) is provided with heat sinks (8) on its upper side, and the heat sinks (8) are arranged in an array.

6. A high-power MOSFET with a heat dissipation chip according to claim 1, characterized in that: The slot (9) is slidably connected to the connecting block (10), and the connecting block (10) is located on the lower side of the cleaning plate (11), and the slot (9) and the connecting block (10) correspond one-to-one.

7. A high-power MOSFET with a heat dissipation chip according to claim 6, characterized in that: The cleaning plate (11) is provided with a cleaning plate (12) on its lower side, and the cleaning plate (12) is arranged in an array. The cleaning plate (12) is in close contact with the heat dissipation chip body (5) and the heat dissipation plate (8).

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