Bridging structure of insulating DAF film in DFN0603 packaging
By employing an insulating DAF film bridging structure in the DFN0603 package, the problems of insufficient heat dissipation and overcurrent in small package shapes are solved, achieving a higher chip package area and improved performance.
Patent Information
- Application Number
- CN202520045539.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-08
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2035-01-08
AI Technical Summary
In small-form-factor chip packages, insufficient heat dissipation and overcurrent capacity affect chip performance and lifespan.
An insulating DAF film bridging structure is adopted to connect the electrodes of the chip to the electrodes of the DFN0603 frame through leads. By utilizing the insulation and adhesion of the insulating DAF film, the connection area between the chip and the frame electrodes is increased to form a bridging structure, thereby improving heat dissipation performance and overcurrent capacity.
With the same package shape, the chip's package area is increased, improving heat dissipation and overcurrent capacity, and enhancing the chip's electrical functions and overall performance.
Smart Images
Figure CN223786529U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor packaging technology, specifically to a bridging structure of insulating DAF film in DFN0603 packaging. Background Technology
[0002] A chip package frame is a carrier used to mount discrete semiconductor devices. It plays a role in placing, fixing, and connecting chips and enhancing their electrothermal performance. It also serves as a bridge between the internal world of the chip and external circuits. The electrodes on the chip are connected to the pins of the package frame by wires. These pins are then connected to other devices through wires on the printed circuit board to form circuits.
[0003] Chips generate heat during operation. Poor chip packaging can affect heat dissipation, leading to overheating and impacting chip performance and lifespan. The size of a chip with the same electrical parameters directly determines the heat dissipation performance and overcurrent capability of devices with the same package shape. Therefore, how to increase the area of packageable chips in a small package shape is a key technology in chip packaging. Thus, it is urgent to design a new mechanism to solve the above-mentioned technical problems. Utility Model Content
[0004] In view of the deficiencies in the prior art, the purpose of this utility model is to provide a bridging structure for the insulating DAF film in the DFN0603 package.
[0005] The present invention provides a bridging structure for an insulating DAF film in a DFN0603 package, comprising a chip, an insulating DAF film, and a DFN0603 frame.
[0006] The DFN0603 frame includes a first bonding area and a second bonding area, with a gap between them. The first and second bonding areas form two electrodes. Both electrodes of the chip are disposed on the front side of the chip, and the back side of the chip is disposed on top of the insulating DAF film. The bottom of the insulating DAF film crosses the gap and is disposed on the first and second bonding areas on both sides, respectively. One electrode on the chip is connected to the first bonding area via a lead, and the other electrode on the chip is connected to the second bonding area via another lead.
[0007] Preferably, the upper and lower surfaces of the insulating DAF film are both adhesive layers.
[0008] Preferably, the chip has the same surface area on the side that contacts the insulating DAF film.
[0009] Compared with the prior art, the present invention has the following beneficial effects:
[0010] This invention attaches a chip and an insulating DAF film together onto a DFN0603 frame, forming a bridging structure between the two electrodes of the DFN0603 frame. The two electrodes of the chip and the two electrodes of the DFN0603 frame are connected by leads to realize the chip's electrical functions. By utilizing the double-sided adhesiveness and insulation properties of the insulating DAF film, and by utilizing the area of the two electrodes of the frame, the chip area that can be packaged within the DFN0603 frame is increased, improving the device's heat dissipation performance and overcurrent capability, resulting in superior performance among devices with the same package shape. Attached Figure Description
[0011] Other features, objects, and advantages of this invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:
[0012] Figure 1 This is an exploded view of a bridging structure of the insulating DAF film in a DFN0603 package according to this utility model;
[0013] Figure 2 This is a schematic diagram of a bridging structure of the insulating DAF film in the DFN0603 package according to this embodiment.
[0014] The diagram shows:
[0015] Chip 1
[0016] Insulating DAF film 2
[0017] DFN0603 Frame 3
[0018] First adhesive area 31
[0019] Second adhesive area 32
[0020] Disconnection gap 33
[0021] Lead 4 Detailed Implementation
[0022] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the present invention in any way. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all fall within the protection scope of the present invention.
[0023] This invention provides a bridging structure for an insulating DAF film in a DFN0603 package, comprising a chip 1, with both electrodes of the chip 1 disposed on the front side of the chip, and the area of the chip 1 exceeding the limit of the chip area that the DFN0603 can package. Before wafer dicing, an insulating DAF film 2 is attached to the back side of the wafer. After dicing, the insulating DAF film 2 is divided together with the chip into insulating DAF films of the same area. The other side of the insulating DAF film 2 is adhesive. The chip 1 and the insulating DAF film 2 are picked up together from the blue film and attached to the DFN0603 frame 3.
[0024] Furthermore, such as Figure 1 , Figure 2 As shown, the DFN0603 frame 3 includes two bonding areas, namely a first bonding area 31 and a second bonding area 32, with a gap 33 between them. The first bonding area 31 and the second bonding area 32 form two electrodes. The back of the chip 1 is disposed on top of the insulating DAF film 2, and the bottom of the insulating DAF film 2 spans the gap 33 and is disposed on the first bonding area 31 and the second bonding area 32 on both sides. One electrode on the chip 1 is connected to the first bonding area 31 through a lead 4, and the other electrode on the chip 1 is connected to the second bonding area 32 through another lead 4. In this invention, the chip 1 and the insulating DAF film 2 are bonded together on the DFN0603 frame 3, forming a bridge between the two electrodes of the DFN0603 frame 3. The two electrodes of the chip 1 and the two electrodes of the DFN0603 frame 3 are connected by the lead 4 to realize the electrical function of the chip.
[0025] In practical applications, when the area of the packaging frame for attaching the chip is insufficient, the insulating DAF film 2 is used to attach the insulating DAF film 2 to the wafer and the other side to the blue film. During the dicing process, the insulating DAF film 2 is divided into sections with the same area as the chip 1, which makes it easier to attach to the DFN0603 frame 3.
[0026] Specifically, a chip 1 with an insulating DAF film 2 is bonded across the two electrodes of a DFN0603 frame 3 to form a bridge. This increases the area of the packageable chip by utilizing the two electrodes of the DFN0603 frame 3, facilitating a larger packageable chip area for devices with the same package shape. The insulating DAF film 2 is bonded to the chip 1, which is then bonded between the two electrodes of the DFN0603 frame 3. Leads 4 connect the two electrodes of the chip 1 to the two electrodes of the DFN0603 frame 3, forming a circuit to realize the electrical function of the chip 1. This invention increases the packageable chip area within the DFN0603 frame 3, improves the device's heat dissipation and overcurrent capacity, and makes it more competitive in applications with devices of the same package shape.
[0027] The principle behind the fabrication of the bridging structure of the insulating DAF film in the DFN0603 package in this invention is as follows:
[0028] First, a film is attached to chip 1, where both electrodes are on the front side. Specifically, an insulating DAF film 2 is attached to the back side of the wafer, and the other side of the wafer is attached to an adhesive film.
[0029] Next, wafer dicing is performed, specifically, the wafer is diced into granules with an insulating DAF film 2 of the same area attached to the back.
[0030] Next, the chip 1 with the insulating DAF film 2 is attached; specifically, the chip 1 with the insulating DAF film 2 attached to its back is picked up from the blue film and attached to the two electrodes of the DFN0603 frame 3. The good adhesion and insulation of the insulating DAF film 2 are used to isolate the chip 1 from the two electrodes of the DFN0603 frame 3. The insulating DAF film 2 has good heat dissipation performance and does not affect the heat dissipation generated by the chip 1 during operation.
[0031] Finally, the electrodes of chip 1 and the electrodes of DFN0603 frame 3 are connected by lead 4; specifically, the two electrodes of chip 1 are connected to the two electrodes of DFN0603 frame 3 by metal wire to form a circuit and realize the electrical function of the chip.
[0032] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0033] The specific embodiments of this utility model have been described above. It should be understood that this utility model is not limited to the specific embodiments described above, and those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the substantive content of this utility model. Unless otherwise specified, the embodiments and features described in this application can be arbitrarily combined with each other.
Claims
1. A bridging structure for the insulating DAF film in a DFN0603 package, characterized in that, It includes a chip (1), an insulating DAF film (2), and a DFN0603 frame (3); The DFN0603 frame (3) includes a first bonding area (31) and a second bonding area (32), with a break gap (33) between the first bonding area (31) and the second bonding area (32). The first bonding area (31) and the second bonding area (32) form two electrodes. Both electrodes of the chip (1) are disposed on the front side of the chip (1), and the back side of the chip (1) is disposed on the top of the insulating DAF film (2). The bottom side of the insulating DAF film (2) crosses the break gap (33) and is disposed on the first bonding area (31) and the second bonding area (32) on both sides respectively. One electrode on the chip (1) is connected to the first bonding area (31) through a lead (4), and the other electrode on the chip (1) is connected to the second bonding area (32) through another lead (4).
2. The bridging structure of the insulating DAF film in the DFN0603 package according to claim 1, characterized in that, The insulating DAF film (2) has adhesive layers on both the top and bottom.
3. The bridging structure of the insulating DAF film in the DFN0603 package according to claim 1, characterized in that, The chip (1) has the same surface area as the insulating DAF film (2).