Low-loss field effect transistor

Abstract

The utility model discloses a low-loss field effect transistor, which comprises a field effect transistor body and a mounting bottom plate, mounting mechanisms are symmetrically arranged on the front side and the rear side of the field effect transistor body, and the mounting mechanisms are used for compressing and positioning the field effect transistor body. The mounting mechanism drives the field effect transistor body to form a dismounting structure at the upper end of the mounting bottom plate, and the mounting mechanism is composed of a supporting plate, a limiting plate, a fixing pressing plate, a fixing bolt and a fixing block. According to the low-loss field effect transistor, through the arrangement of the positioning side plate and the mounting mechanism, the field effect transistor body and the mounting bottom plate can be mounted very quickly, the field effect transistor body can be detached, maintained and replaced conveniently in the later period, and the field effect transistor body is attached to the upper end of the heat dissipation copper sheet, so that the heat dissipation efficiency is improved. And through the arrangement of the heat dissipation copper sheet and the heat dissipation fins, the heat of the field effect transistor body can be dissipated outwards in an auxiliary manner.

Description

Technical Field

[0001] This utility model relates to the technical field of field-effect transistors, specifically to a low-loss field-effect transistor. Background Technology

[0002] A field-effect transistor (FET) is a semiconductor device that uses an electric field effect to control current. It can control the current in the output circuit by controlling the electric field effect in the input circuit, and can amplify weak electrical signals. It is widely used in audio amplifiers and radio frequency amplifiers.

[0003] As disclosed in publication number CN214043646U, a flexible field-effect transistor with a cumulative effect includes a silicon crystal. A metal connecting rod is movably embedded in the lower surface of the silicon crystal. A channel is fixedly installed inside the silicon crystal. The metal connecting rod includes a source connecting rod, a gate connecting rod, and a drain connecting rod. A source connection base is formed on the lower surface of the silicon crystal, and the source connecting rod is movably connected to the silicon crystal through the source connection base. A gate connection base is formed on one side of the lower surface of the silicon crystal near the source connection base, and the gate connecting rod is movably connected to the silicon crystal through the gate connection base. A drain connection base is formed on one side of the lower surface of the silicon crystal near the gate connection base. This flexible field-effect transistor with a cumulative effect allows for the free replacement of individual metal connecting pins, reducing cost waste.

[0004] However, existing technologies have several drawbacks. The disassembly and assembly of field-effect transistors are inconvenient, as most require bolts for positioning, which makes disassembly and maintenance difficult. Furthermore, the heat dissipation of field-effect transistors is poor, and the heat accumulation can affect their actual lifespan. For example, the comparative patents listed above have this problem.

[0005] To address this issue, we propose a low-loss field-effect transistor. Utility Model Content

[0006] The purpose of this invention is to provide a low-loss field-effect transistor to solve the problems mentioned in the background art, such as the inconvenience of disassembling and assembling field-effect transistors, which mostly require positioning with bolts, making it inconvenient for later disassembly and maintenance, and the poor heat dissipation effect of field-effect transistors, which can lead to heat accumulation and affect the actual service life of field-effect transistors.

[0007] To achieve the above objectives, this utility model provides the following technical solution: a low-loss field-effect transistor, comprising a field-effect transistor body and a mounting base plate;

[0008] Also includes:

[0009] The mounting mechanism is symmetrically arranged on the front and rear sides of the field-effect transistor body, and the mounting mechanism is used to press and position the field-effect transistor body. The mounting mechanism drives the field-effect transistor body to form a disassembly structure on the upper end of the mounting base plate.

[0010] The installation mechanism consists of a support plate, a limiting plate, a fixing plate, a fixing bolt, and a fixing block.

[0011] Preferably, multiple positioning side plates for positioning are attached to the corner of the field-effect transistor body, and the positioning side plates are fixedly connected to the upper end of the heat sink copper sheet.

[0012] Preferably, the support plate is fixedly connected to the front and rear sides of the upper end of the field-effect transistor body, and a limit plate is fixedly connected to the inner side of the support plate, and a fixed pressure plate is hinged to the upper end of the support plate.

[0013] The fixing plate is attached to the upper end of the field-effect transistor body.

[0014] Preferably, the middle of the fixed pressure plate is hinged to a fixing bolt, and the lower end of the fixing bolt is fixedly connected to a fixing block for limiting the position.

[0015] Preferably, the fixing block is engaged in the limiting plate.

[0016] Preferably, the lower end of the heat dissipation copper sheet is fixedly connected to multiple sets of heat dissipation fins, and the heat dissipation fins are disposed through the mounting base plate. A heat dissipation cavity is opened in the middle of the mounting base plate, and heat dissipation grooves are opened at equal intervals on the front and rear sides of the mounting base plate.

[0017] The heat dissipation cavity is connected to the heat dissipation groove.

[0018] Preferably, the lower end of the heat dissipation fins extends into the heat dissipation cavity.

[0019] Compared with the prior art, the beneficial effects of this utility model are: the low-loss field-effect transistor, through the setting of the positioning side plate and the mounting mechanism, can be installed between the field-effect transistor body and the mounting base plate very quickly, which facilitates the disassembly, maintenance and replacement of the field-effect transistor body in the later stage. In addition, the field-effect transistor body is attached to the upper end of the heat sink copper plate. Through the setting of the heat sink copper plate and heat sink fins, the heat generated by the field-effect transistor body during use can be dissipated to the outside, which plays a good protective role, reduces loss and thus extends the service life of the field-effect transistor body.

[0020] 1. It is equipped with a field-effect transistor body, a positioning side plate and a mounting base plate. By engaging the field-effect transistor body with the positioning side plate, the field-effect transistor body can be easily positioned on the upper end of the mounting base plate.

[0021] 2. An installation mechanism is provided, which includes a support plate, a limiting plate, a fixing plate, a fixing bolt, and a fixing block. The installation mechanism facilitates the clamping and positioning of the field-effect transistor body, thereby facilitating the disassembly, assembly, and replacement of the field-effect transistor body.

[0022] 3. It is equipped with heat dissipation copper fins and heat dissipation fins. The heat dissipation copper fins are attached to the lower end of the field-effect transistor body, and the lower end of the heat dissipation fins extends into the heat dissipation cavity, thereby helping to dissipate the heat of the field-effect transistor body to the outside and reducing the loss of the field-effect transistor body. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0024] Figure 2 This is a schematic diagram of the overall structure of the field-effect transistor body, positioning side plate, and fixing pressure plate of this utility model;

[0025] Figure 3 This is a schematic diagram of the overall structure of the field-effect transistor body, positioning side plate, heat dissipation copper sheet and mounting base plate of this utility model;

[0026] Figure 4 This is a schematic diagram of the overall structure of the support plate, fixing plate, and fixing bolt of this utility model;

[0027] Figure 5 This is a schematic diagram of the structure of the fixed pressure plate and support plate in the flipped state of this utility model;

[0028] Figure 6 This is an exploded structural diagram of the mounting base plate, heat dissipation copper fins, and heat dissipation fins of this utility model.

[0029] In the diagram: 1. Field-effect transistor body; 2. Positioning side plate; 3. Mounting mechanism; 4. Support plate; 5. Limiting plate; 6. Fixing pressure plate; 7. Fixing bolt; 8. Fixing block; 9. Heat sink copper fin; 10. Heat sink fin; 11. Mounting base plate; 12. Heat sink cavity; 13. Heat sink groove. Detailed Implementation

[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0031] Please see Figures 1-6 The present invention provides the following technical solution.

[0032] Example 1: To address the inconvenience of disassembling and assembling field-effect transistors (FETs) in existing technologies, which often require bolts for positioning and hinder subsequent disassembly and maintenance, this example provides a low-loss FET comprising a FET body 1, a positioning side plate 2, and a mounting mechanism 3. The mounting mechanism 3 is symmetrically arranged on the front and rear sides of the FET body 1 and is used to press and position the FET body 1. The mounting mechanism 3 drives the FET body 1 to form a disassembly structure on the upper end of the mounting base plate 11. The mounting mechanism 3 consists of a support plate 4, a limiting plate 5, and a positioning plate 6. The device comprises a fixed pressure plate 6, a fixed bolt 7, and a fixed block 8. Multiple positioning side plates 2 are fitted at the corners of the field-effect transistor body 1 for positioning, and the positioning side plates 2 are fixedly connected to the upper end of the heat sink copper fin 9. Support plates 4 are fixedly connected to the front and rear sides of the upper end of the field-effect transistor body 1, and a limiting plate 5 is fixedly connected to the inner side of the support plate 4. A fixed pressure plate 6 is hinged to the upper end of the support plate 4, and the fixed pressure plate 6 is fitted at the upper end of the field-effect transistor body 1. A fixed bolt 7 is hinged to the middle of the fixed pressure plate 6, and a fixing block 8 for limiting is fixedly connected to the lower end of the fixed bolt 7. The fixing block 8 engages with the limiting plate 5. Figure 1 , Figure 2 , Figure 4 and Figure 5 As shown, the field-effect transistor body 1 is placed on the mounting base plate 11, and the field-effect transistor body 1 is attached to the upper end of the heat sink copper plate 9. At the same time, the field-effect transistor body 1 is engaged with the positioning side plate 2 to facilitate the positioning of the field-effect transistor body 1. Then, the fixing plate 6 is flipped and rotated on the upper end of the limiting plate 5. The fixing plate 6 is attached to the upper end of the field-effect transistor body 1 to press and position the field-effect transistor body 1. Then, the fixing bolt 7 threaded to the upper end of the fixing plate 6 is rotated. The fixing bolt 7 drives the fixing block 8 to move downward so that the fixing block 8 is engaged in the middle of the limiting plate 5, thereby facilitating the limiting between the fixing plate 6 and the support plate 4. This completes the pressing, installation and positioning of the field-effect transistor body 1. Moreover, the field-effect transistor body 1 can be disassembled, maintained and replaced by reversing the above operation.

[0033] Example 2: To address the problem of poor heat dissipation in existing field-effect transistors (FETs), which leads to heat accumulation affecting the actual lifespan of the FET, this example provides a low-loss FET comprising a heat sink copper plate 9, heat sink fins 10, a mounting base plate 11, a heat dissipation cavity 12, and heat dissipation grooves 13. The heat sink copper plate 9 is embedded in the upper end of the mounting base plate 11 and is fitted against the lower end of the FET body 1. Multiple sets of heat sink fins 10 are fixedly connected to the lower end of the heat sink copper plate 9, and the heat sink fins 10 penetrate the mounting base plate 11. A heat dissipation cavity 12 is formed in the middle of the mounting base plate 11, and heat dissipation grooves 13 are equally spaced on both the front and rear sides of the mounting base plate 11. The heat dissipation cavity 12 is connected to the heat dissipation grooves 13, and the lower ends of the heat sink fins 10 extend into the heat dissipation cavity 12. Figure 1 , Figure 3 and Figure 6 As shown, the heat sink 9 is attached to the lower end of the field-effect transistor body 1, and the heat sink 9 drives the heat sink fins 10 to pass through the field-effect transistor body 1. The heat of the field-effect transistor body 1 is dissipated to the outside through the heat sink 9 and the heat sink fins 10, and is ventilated and dissipated through the heat sink 13 and the heat sink cavity 12, which can achieve a good heat dissipation effect, reduce the wear of the field-effect transistor body 1, and extend the service life of the field-effect transistor body 1.

[0034] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A low-loss field-effect transistor, comprising a field-effect transistor body (1) and a mounting base (11); Its features are, Also includes: The mounting mechanism (3) is symmetrically arranged on the front and rear sides of the field-effect transistor body (1), and the mounting mechanism (3) is used to press and position the field-effect transistor body (1). The mounting mechanism (3) drives the field-effect transistor body (1) to form a disassembly structure on the upper end of the mounting base plate (11). The installation mechanism (3) consists of a support plate (4), a limiting plate (5), a fixing plate (6), a fixing bolt (7), and a fixing block (8); A heat dissipation copper sheet (9) is embedded in the upper end of the mounting base plate (11) and is attached to the lower end of the field effect transistor body (1).

2. The low-loss field-effect transistor according to claim 1, characterized in that: Multiple positioning side plates (2) for positioning are attached to the corner of the field effect transistor body (1), and the positioning side plates (2) are fixedly connected to the upper end of the heat sink copper sheet (9).

3. The low-loss field-effect transistor according to claim 1, characterized in that: The support plate (4) is fixedly connected to the front and rear sides of the upper end of the field effect transistor body (1), and the inner side of the support plate (4) is fixedly connected to the limiting plate (5). The upper end of the support plate (4) is hinged to the fixing pressure plate (6). The fixing plate (6) is attached to the upper end of the field-effect transistor body (1).

4. A low-loss field-effect transistor according to claim 3, characterized in that: The fixed plate (6) is hinged in the middle and has a fixing bolt (7) connected to it. The lower end of the fixing bolt (7) is fixedly connected to a fixing block (8) for limiting the position.

5. A low-loss field-effect transistor according to claim 4, characterized in that: The fixing block (8) is engaged in the limiting plate (5).

6. A low-loss field-effect transistor according to claim 1, characterized in that: The lower end of the heat dissipation copper sheet (9) is fixedly connected to multiple sets of heat dissipation fins (10), and the heat dissipation fins (10) are installed through the mounting base plate (11). The mounting base plate (11) has a heat dissipation cavity (12) in the middle, and heat dissipation grooves (13) are equally spaced on the front and rear sides of the mounting base plate (11). The heat dissipation cavity (12) is connected to the heat dissipation groove (13).

7. A low-loss field-effect transistor according to claim 6, characterized in that: The lower end of the heat dissipation fins (10) extends into the heat dissipation cavity (12).

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