Gallium nitride LED driving power supply with adjustable output voltage

By combining a microprocessor and an NPN transistor with an active single-stage PFC flyback chip, the problems of brightness and power consumption in LED driver power supplies are solved, achieving adjustable output voltage and high integration design, thus improving product reliability and applicability.

CN223798379UActive Publication Date: 2026-01-13YIGUANG TECH (JIANGSU) CO LTD
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Patent Information

Application Number
CN202520071526.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-01-13
Publication Date
2026-01-13
Estimated Expiration
2035-01-13

AI Technical Summary

Technical Problem

Existing LED driver power supplies are insufficient in terms of adjusting brightness and power consumption, making it difficult to meet the needs of LED lighting applications with different voltage requirements.

Method used

By combining a microprocessor, an NPN transistor, and an active single-stage PFC flyback chip, the adjustable LED driver power supply is achieved by adjusting the output voltage. High integration design is achieved by utilizing gallium nitride third-generation semiconductor technology, reducing components and lowering costs.

Benefits of technology

This achieves adjustable LED brightness while reducing power consumption, ensuring the safety and stability of the driver power supply, and broadening the application range of the product.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a gallium nitride LED driving power supply with an adjustable output voltage. The gallium nitride LED driving power supply comprises a microprocessor, an NPN triode and an active single-stage PFC flyback chip. And the microprocessor is connected with the active single-stage PFC flyback chip through the NPN triode, and adjusts the output voltage, so that the output voltage of the active single-stage PFC flyback chip is adjustable. The microprocessor is connected with one end of the first resistor, the other end of the first resistor is connected with one end of the second resistor and is connected with a base electrode of the NPN triode, the other end of the second resistor is connected with an emitting electrode of the NPN triode, and a collector electrode of the NPN triode is connected with one end of the third resistor; and the other end of the third resistor is connected with an FB pin of the active single-stage PFC flyback chip. By using the gallium nitride third-generation semiconductor technology and the high-integration design, the output voltage can be adjusted and selected, the number of components is small, the product cost and the power consumption are reduced, and the reliability is improved.
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Description

Technical Field

[0001] This utility model relates to the field of electronics, and in particular to a gallium nitride LED driver power supply with adjustable output voltage. Background Technology

[0002] In recent years, existing LED lighting fixtures have combined many LEDs into a design similar to traditional lamps. Due to their high luminous efficiency, uniform spectral distribution, high energy efficiency, long lifespan, and low-voltage controllability, LED lights are widely used in urban greening lighting, festival lights, mine lights, flashlights, and indoor and outdoor lighting for vehicles. The brightness of an LED is positively correlated with the current flowing through it; however, the brightness of LED lighting fixtures is not as easily adjustable as that of ordinary incandescent bulbs. Adjustable LED brightness remains a problem that people are eager to solve. Utility Model Content

[0003] In view of this, the purpose of this application is to provide a gallium nitride LED driver power supply with adjustable output voltage to solve the above technical problems.

[0004] This application provides a gallium nitride LED driver power supply with adjustable output voltage, including: a microprocessor, an NPN transistor, and an active single-stage PFC flyback chip;

[0005] The microprocessor is connected to the active single-stage PFC flyback chip via the NPN transistor, and adjusts the output voltage to make the output voltage of the active single-stage PFC flyback chip adjustable.

[0006] In some alternative implementations, the microprocessor is a 32-bit MCU microcontroller of model STM32G030C8T6.

[0007] In some alternative implementations, the NPN transistor is an NPN bipolar transistor of type MMBT3904.

[0008] In some optional implementations, the active single-stage PFC flyback chip is a BP83223 gallium nitride encapsulated chip.

[0009] In some alternative implementations, the microprocessor is connected to the active single-stage PFC flyback chip of the enhancement-mode gallium nitride switch via the NPN transistor, including:

[0010] The pins of the STM32G030C8T6 are connected to one end of the first resistor, the other end of the first resistor is connected to one end of the second resistor and to the base of the NPN transistor, the other end of the second resistor is connected to the emitter of the NPN transistor, the collector of the NPN transistor is connected to one end of the third resistor, and the other end of the third resistor is connected to the FB pin of the active single-stage PFC flyback chip.

[0011] In some alternative embodiments, the first resistor has a resistance of 1KΩ, the second resistor has a resistance of 10KΩ, and the three-phase resistor has a resistance of 4.7KΩ.

[0012] Based on the above technical solution, the gallium nitride LED driver power supply with adjustable output voltage provided in this application uses gallium nitride third-generation semiconductor technology, features a highly integrated design with fewer components, reduces product cost, and improves reliability. In addition, the output voltage of the gallium nitride LED driver power supply is adjustable through a microprocessor and an NPN transistor, which allows for adjusting the brightness of the LED while reducing power consumption. This effectively solves the problems of high temperature and high energy consumption caused by adjusting the LED brightness by adjusting the LED current, ensuring the safety and stability of the gallium nitride LED driver power supply. Furthermore, the driver power supply can drive LEDs with different voltages, broadening the product application range. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a schematic diagram of a gallium nitride LED driver power supply with adjustable output voltage, provided as an embodiment of this application.

[0015] Figure 2 The main power circuit diagram of the BP83223 gallium nitride co-packaged chip provided in the embodiments of this application is shown.

[0016] Figure 3 A schematic diagram of the connection between an STM32G030C8T6 and an NPN bipolar transistor is provided for embodiments of this application. Detailed Implementation

[0017] The specific embodiments of this application will now be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are merely a part of the embodiments of this application, and not all of them. Based on the description of this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0018] In the description of this application, unless otherwise expressly specified and limited, the terms "connection," "setup," "installation," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0019] The terms “upper,” “lower,” “left,” “right,” “front,” “back,” “center,” “top,” “bottom,” “inner,” “outer,” “vertical,” “horizontal,” “clockwise,” “counterclockwise,” “axial,” “radial,” and “circumferential” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of description and simplification, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0020] The terms “first,” “second,” “third,” etc., are used only to distinguish elements with similar properties, and do not indicate or imply relative importance or a specific order, unless otherwise explicitly stated or limited.

[0021] The terms “comprising,” “including,” “having,” or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase “comprising one…” does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0022] The term "multiple" means two or more (including two).

[0023] The term "and / or" describes the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent three cases: A exists alone, A and B exist simultaneously, and B exists alone.

[0024] The terms "an embodiment," "as an example," and "in one implementation" refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which may be included in at least one embodiment or example of this application. These illustrative expressions do not necessarily refer to the same embodiment, nor are they independent or alternative embodiments mutually exclusive with other embodiments. Where there is no conflict, the embodiments and features described in these embodiments can be combined in a suitable manner.

[0025] Figure 1 This is a schematic diagram of a gallium nitride LED driver power supply with adjustable output voltage, provided as an embodiment of this application.

[0026] The adjustable output voltage gallium nitride LED driver power supply includes: a microprocessor, an NPN transistor, and an active single-stage PFC flyback chip; the microprocessor is connected to the active single-stage PFC flyback chip through the NPN transistor to adjust the output voltage, making the output voltage of the active single-stage PFC flyback chip adjustable.

[0027] See Figure 2 The main power circuit of the BP83223 gallium nitride (GaN) co-packaged chip shown is illustrated. The BP83223, developed by Chipone Technology, is an active single-stage PFC flyback chip with an integrated 650V withstand voltage and 115mΩ on-resistance enhancement-mode GaN switch. Its single-stage structure effectively reduces the size and cost by integrating a single-stage PFC flyback inductor and high-voltage filter capacitor. It integrates high-voltage startup and input voltage sampling circuits and features an enhanced power factor (PF) control algorithm. It requires very few external components to achieve high-precision constant voltage output, high power factor, and low current harmonics. The BP83223 can output up to 100W with extremely low standby power consumption (less than 100mW at 230V). It exhibits excellent line regulation and load regulation, and incorporates a dynamic acceleration module to effectively improve system response to loads and provide stable output voltage performance. The BP83223 uses a Ton-time control mechanism and an enhanced PF control algorithm, easily meeting the new ErP current harmonic standard under light loads. Quasi-resonant operating modes (BCM and DCM) turn on the power transistor at the valley, achieving higher efficiency and better EMI performance.

[0028] The microprocessor is connected to the active single-stage PFC flyback chip of the enhanced gallium nitride switch via the NPN transistor.

[0029] like Figure 3 As shown, the microprocessor is a 32-bit MCU microcontroller of model STM32G030C8T6 from STMicroelectronics.

[0030] Specifically, STMicroelectronics' STM32G030C8T6 is based on a high-performance... The STM32G030C8T6 features a RISC core operating at up to 64MHz. It includes a Memory Protection Unit (MPU), a high-speed embedded memory, 8kbytes of SRAM, and up to 64kbytes of Flash program memory with read and write protection, extensive system functions, and enhanced I / O and peripherals. The device provides a standard communication interface and two I / O pins. 2 c, two SPIs / one I 2 The STM32G030C8T6 features two USARTS, a 12-bit ADC (2.5MSPS) with up to 19 channels, a low-power RTC, an advanced control PWM timer, four general-purpose 16-bit timers, two watchdog timers, and a Systick timer. The STM32G030C8T6 operates from -40°C to 85°C and from 2.0V to 3.6V. It incorporates a comprehensive set of power-saving modes to optimize dynamic power consumption, allowing for the design of low-power applications. A direct battery input (VBAT) allows the RTC and backup registers to be powered.

[0031] The STMicroelectronics STM32G030C8T6 also includes multiple GPIO pins for connecting various external devices and sensors. These pins can be used to input and output digital signals to enable interaction with the external environment. In low-power mode, the STM32G030C8T6 supports multiple low-power modes, which can effectively reduce power consumption in different application scenarios. These low-power modes can extend battery life and reduce system energy consumption.

[0032] Specifically, see Figure 3The STM32G030C8T6 has 48 pins, each with different functions, including power supply, ground, general purpose input / output (GPIO), clock, and peripheral interfaces. For GPIO, the STM32F103C8T6 has 16 GPIO ports, each with its own control register. The state of the GPIO port can be controlled by writing control words to the registers. The STM32F103C8T6 integrates three 16-bit counters and one basic timer, all of which can be matched to external analog or digital signals. The STM32F103C8T6 also includes a built-in 12-bit analog-to-digital converter (ADC), supporting multiple analog inputs and single-channel, multi-channel, and continuous conversion modes. Finally, the STM32F103C8T6 has three built-in synchronous serial communication ports (UARTs) for serial communication with external devices. USART1 is a communication port equipped with hardware flow control and is also the debugging port used in hardware emulation mode. It can be used to communicate with a computer to complete information debugging. The STM32F103C8T6 has two built-in SPI communication ports, supporting communication between master and slave. SPI communication generally requires timing control, so the master needs to master the SPI communication timing.

[0033] like Figure 3 As shown, the NPN transistor is an NPN bipolar transistor of model MMBT3904, packaged in SOT-23. When a positive bias is applied to the base, the current will flow from the collector to the emitter. The maximum voltage that the collector and base can withstand, as well as the maximum voltage that the collector and emitter can withstand, is 40V. The maximum voltage that the emitter and base can withstand is 6V. The maximum collector current that the transistor can withstand under normal operating conditions is 200mA. The temperature range that the transistor can withstand under normal operating conditions is -55℃ to +150℃.

[0034] The STM32G030C8T6 microprocessor controls and adjusts the FB pin voltage of the BP83223 gallium nitride (GaN) chip through the NPN bipolar transistor MMBT3904, thereby changing the output voltage.

[0035] Specifically, the general-purpose input / output pin PA15 of the STM32G030C8T6 microprocessor is connected to one end of a first resistor. The other end of the first resistor is connected to one end of a second resistor and to the base of the NPN transistor. The other end of the second resistor is connected to the emitter of the NPN transistor. The collector of the NPN transistor is connected to one end of a third resistor, and the other end of the third resistor is connected to the FB pin of the active single-stage PFC flyback chip. The FB (Feedback) pin of the single-stage PFC flyback chip is a feedback input port. In power supply design, the single-stage PFC flyback circuit is used to improve the power factor of AC power supplies. The FB pin is typically used to monitor the output voltage and feed this information back to the controller to adjust the switching frequency or duty cycle, thereby maintaining the stability of the output voltage. It is a key part of the closed-loop control system, ensuring that the single-stage PFC flyback circuit can accurately regulate and maintain the output voltage at the setpoint.

[0036] The PA15 pin can be configured as a general purpose output (GPIO) pin to drive an external load; the first resistor has a resistance of 1KΩ, the second resistor has a resistance of 10KΩ, and the third resistor has a resistance of 4.7KΩ.

[0037] By pre-selecting and configuring the STM32G030C8T6, the output voltage can be adjusted. For example, when the LED load requires 24V, the microprocessor output port can output a high level, turning on the transistor Q1MMBT3904-E, allowing current to flow. The resistor voltage division ratio will increase accordingly, and the output voltage will be higher to obtain 24V. Conversely, if the microprocessor outputs a low level, the transistor Q1MMBT3904-E will be cut off, the resistor voltage division ratio will decrease, and the output voltage will be lower to obtain 12V. In this way, by adjusting the high and low levels of the microprocessor output port, the gallium nitride LED driver power supply can be switched between 12V and 24V to meet the customer's needs for different output voltages for different LED loads.

[0038] In summary, this application connects an NPN bipolar transistor and a gallium nitride (GaN) packaged chip to a microprocessor in sequence. By pre-selecting and configuring the microprocessor, the output voltage can be adjusted to meet the different output voltage requirements of customers for different LED loads. In addition, by using third-generation gallium nitride semiconductor technology, a high degree of integration design is achieved, reducing the number of components, lowering product costs, and improving reliability.

[0039] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this application, and these should all be included within the scope of protection of this application.

Claims

1. A gallium nitride LED driving power source with adjustable output voltage, characterized in that, The utility model relates to a gallium nitride LED drive power supply, including: a microprocessor, an NPN triode and an active single-stage PFC flyback chip; the microprocessor is connected with the active single-stage PFC flyback chip through the NPN triode, and the output voltage is adjusted so that the output voltage of the gallium nitride LED drive power supply is adjustable; the microprocessor is connected with the active single-stage PFC flyback chip through the NPN triode, including: the general input / output pin of the microprocessor is connected with one end of the first resistance, the other end of the first resistance is connected with one end of the second resistance and the base of the NPN triode, the other end of the second resistance is connected with the emitter of the NPN triode, one end of the third resistance is connected with the collector of the NPN triode, and the other end of the third resistance is connected with the FB pin of the active single-stage PFC flyback chip; if the output port of the microprocessor outputs high level, the NPN triode is turned on, allows current to flow, and the resistance voltage dividing ratio is correspondingly changed, the output voltage of the LED drive power supply is correspondingly changed, and high voltage is obtained, otherwise, if the output port of the microprocessor outputs low level, the NPN triode is cut off, the resistance voltage dividing ratio is changed, and the output voltage of the LED drive power supply is correspondingly changed, and low voltage is obtained, the output voltage is adjusted by the microprocessor, and the adjustable output voltage is realized; the active single-stage PFC flyback chip adopts a gallium nitride hybrid sealing chip with the model BP83223.

2. The adjustable output voltage GaN LED driving power supply according to claim 1, wherein, the microprocessor adopts a 32-bit MCU microcontroller with the model STM32G030C8T6.

3. The adjustable output voltage GaN LED driving power supply according to claim 1, wherein, the NPN triode adopts an NPN type bipolar transistor triode with the model MMBT3904.

4. The adjustable output voltage GaN LED driving power supply according to claim 1, wherein, the resistance value of the first resistance is 1KΩ, the resistance value of the second resistance is 10KΩ, and the resistance value of the third resistance is 4.7KΩ.