Dielectric breakdown measurement circuit and semiconductor detection equipment

Abstract

The utility model provides a dielectric breakdown measurement circuit and a semiconductor detection device. The dielectric breakdown measurement circuit includes: an adjustable voltage source; the first end of the divider resistor is electrically connected with the adjustable voltage source, and the second end of the divider resistor serves as a voltage division output end; the tested circuit is electrically connected with the partial voltage output end; the input end of the detection circuit is electrically coupled to the voltage division output end, and the detection circuit is configured to convert a signal of the voltage division output end into a detection signal. In the breakdown process of the to-be-detected wafer, the change condition of the signal of the partial pressure output end is detected so as to reflect the breakdown degree of the to-be-detected wafer at any time, intermittent dielectric breakdown of the wafer can be prevented, electric breakdown and overlong detection time are further prevented, and the electric breakdown efficiency, the wafer electrostatic discharge efficiency and / or the wafer detection efficiency are remarkably improved. The voltage provided by the adjustable voltage source can also be used as a breakdown voltage, so that an extra electric breakdown circuit is not independently provided for the wafer to be tested.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a kind of dielectric breakdown measurement circuit and semiconductor detection equipment. BACKGROUND

[0002] In some wafer detection processes, it is necessary to rely on dielectric breakdown technology (Time-Dependent Dielectric Breakdown, TDDB) to test the oxide layer at the bottom of the wafer. Dielectric breakdown is an important means of evaluating the reliability of the wafer oxide layer. Currently, the dielectric breakdown measurement circuit usually detects whether the oxide layer is broken after applying a breakdown voltage to the bottom of the wafer, and this cycle continues until the detection of the wafer with a broken oxide layer is completed. However, the detection method of detecting the breakdown effect after applying the breakdown voltage has great limitations in wafer detection. For example, when detecting whether the oxide layer is broken, the application of the breakdown voltage to the bottom of the wafer is suspended. If it is detected that the oxide layer is not broken, the voltage needs to be continuously applied to the bottom of the wafer, which prolongs the time of dielectric breakdown, causing the wafer to be broken for too long. Moreover, in the process of detecting other wafers, the oxide layer needs to be broken to make the upper and lower surfaces of the wafer have the same electric potential. In the manufacturing process of wafers, static electricity is an important problem that needs to be paid attention to and controlled. Static electricity can cause damage to wafer devices, increase the rate of defective products, reduce chip performance and reliability, and other effects. In order to release the static electricity of the wafer, the wafer also needs to be electrically broken down. However, in the existing electric breakdown scheme, the dielectric is broken down, and the wafer cannot be measured at the same time. SUMMARY

[0003] In view of the above problems, the present utility model is proposed to provide a dielectric breakdown measurement circuit and semiconductor detection equipment that overcomes the above problems or at least partially solves the above problems, which can prevent intermittent dielectric breakdown of the wafer and prevent electric breakdown and long detection time.

[0004] Specifically, the present utility model provides a dielectric breakdown measurement circuit, which comprises:

[0005] An adjustable voltage source;

[0006] A voltage dividing resistor, the first end of which is electrically connected to the adjustable voltage source, and the second end of which serves as a voltage dividing output end;

[0007] A measured circuit, which is electrically connected to the voltage dividing output end;

[0008] A detection circuit, the input end of which is electrically coupled to the voltage dividing output end, and is configured to convert the signal of the voltage dividing output end into a detection signal.

[0009] Optionally, the detection circuit comprises:

[0010] a voltage follower circuit, an input end of the voltage follower circuit being electrically coupled to a voltage division output end of the voltage division resistor, the voltage follower circuit being configured to output a voltage signal generated at the voltage division output end.

[0011] Optionally, an output end of the voltage follower circuit is electrically coupled to an input end of a filter capacitor circuit and / or an input end of a sampling circuit, wherein an output end of the filter capacitor circuit is grounded, and the sampling circuit is configured to sample the voltage signal output by the voltage follower circuit.

[0012] Optionally, the voltage follower circuit comprises:

[0013] an operational amplifier, a same direction input end of the operational amplifier being electrically coupled to the voltage division output end via a protection circuit, an opposite direction input end of the operational amplifier being electrically coupled to an output end of the operational amplifier directly or indirectly via a feedback resistor, the output end of the operational amplifier serving as an output end of the voltage follower circuit.

[0014] Optionally, the protection circuit comprises a first protection circuit, the first protection circuit being a resistive circuit with a resistance value between 50kΩ and 150kΩ, an input end of the first protection circuit being electrically coupled to the same direction input end of the operational amplifier, and an output end of the first protection circuit being grounded.

[0015] Optionally, the protection circuit comprises a second protection circuit, the second protection circuit being a resistive circuit with a resistance value between 0.5MΩ and 1.5MΩ, an output end of the second protection circuit being electrically coupled to the same direction input end of the operational amplifier, and an input end of the second protection circuit serving as an input end of the voltage follower circuit.

[0016] Optionally, the second protection circuit comprises a first protection resistor, an output end of the first protection resistor serving as an output end of the second protection circuit, and an input end of the first protection resistor serving as an input end of the second protection circuit or being electrically connected to a second protection resistor with an adjustable resistance value or a fixed value.

[0017] Optionally, the circuit under test comprises a first access portion and a second access portion, the first access portion and the second access portion being configured to access a wafer under test, and the first access portion being electrically coupled to the voltage division output end, and the second access portion being grounded or electrically connected to a negative electrode of an adjustable voltage source.

[0018] Optionally, the adjustable voltage source has a rated voltage value higher than or equal to 2000 volts, and the voltage division resistor has a resistance value between 100kΩ and 300kΩ.

[0019] The utility model also provides a kind of semiconductor detection equipment, it includes:

[0020] The dielectric breakdown measurement circuit of any one above;

[0021] Device main body, the dielectric breakdown measurement circuit is arranged on the device main body, and the device main body is used to accommodate the wafer to be measured, to make the wafer to be measured access the measured circuit of the dielectric breakdown measurement circuit.

[0022] In the dielectric breakdown measurement circuit and semiconductor detection equipment of the utility model, the wafer to be measured can be accessed to the measured circuit, the change condition of the signal of detection voltage output end is detected in the process that the wafer to be measured is broken down, to react the breakdown degree of wafer to be measured at any time, can prevent intermittently dielectric breakdown to wafer, and further prevent electric breakdown and detection time is too long, significantly improve electric breakdown efficiency, wafer electrostatic discharge efficiency and / or wafer detection efficiency.

[0023] Further, in the dielectric breakdown measurement circuit and semiconductor detection equipment of the utility model, the voltage provided by adjustable voltage source can be used as breakdown voltage simultaneously, so that additional electric breakdown circuit is not provided for wafer to be measured separately. In order to control electric breakdown degree, adjustable voltage source can be adjusted according to demand, when the voltage provided by adjustable power supply changes, the voltage distributed by voltage dividing resistor and the voltage distributed by wafer to be measured can also change, and then the signal of voltage dividing output end changes, the detection signal output by detection circuit changes simultaneously, so that the change condition of the voltage provided by adjustable power supply can also be reflected.

[0024] The above and other objects, advantages and features of the present utility model will become more apparent from the following detailed description of some embodiments thereof, when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0025] Some specific embodiments of the present utility model will be described in detail hereinafter with reference to the accompanying drawings, which are shown by way of illustration and not by way of limitation. The same reference numbers in different drawings denote the same or similar components or parts. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the drawings:

[0026] Figure 1 is the schematic structural diagram of the dielectric breakdown measurement circuit according to one embodiment of the present utility model;

[0027] Figure 2 is the schematic structural diagram of the dielectric breakdown measurement circuit according to one embodiment of the present utility model;

[0028] Figure 3is a schematic structural diagram of a dielectric breakdown measurement circuit according to an embodiment of the present application;

[0029] Figure 4 is a schematic structural diagram of a dielectric breakdown measurement circuit according to an embodiment of the present application;

[0030] Figure 5 is a relationship diagram between a detection signal and a resistance value of a to-be-measured resistance obtained by a dielectric breakdown measurement circuit according to an embodiment of the present application;

[0031] Figure 6 is a relationship diagram between a detection signal and a resistance value of a to-be-measured resistance obtained by a dielectric breakdown measurement circuit according to an embodiment of the present application.

[0032] In the drawings:

[0033] 10, adjustable voltage source; 20, voltage dividing resistance; 30, to-be-measured wafer; 40, detection circuit; 41, operational amplifier; 42, first protection circuit; 43, second protection circuit; 431, first protection resistance; 432, second protection resistance; 44, filter capacitor circuit; 45, feedback resistance; 50, sampling circuit; 61, first access part; 62, second access part. DETAILED DESCRIPTION

[0034] The dielectric breakdown measurement circuit and the semiconductor detection device according to the embodiments of the present application will be described below with reference to Figures 1 to 6 In the description of the embodiments, it should be understood that the terms "first" and "second" are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features, that is, one or more of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited. When a certain feature "includes or contains" a certain or certain features, unless otherwise specifically described, it indicates that other features and can further include other features.

[0035] Unless otherwise specifically defined and limited, the terms "set", "mount", "connected", "connected", "fixed", "coupled" and the like should be broadly understood, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the internal communication or interaction relationship of two elements, unless otherwise specifically limited. Those skilled in the art should be able to understand the specific meaning of the above terms in the present application according to the specific circumstances.

[0036] Further, in the description of the embodiments, the first feature being "on" or "under" the second feature can include the first and second features being in direct contact, or can include the first and second features not being in direct contact but being in contact through another feature between them. That is, in the description of the embodiments, the first feature being "on", "above", and "over" the second feature includes the first feature being directly above and obliquely above the second feature, or merely means that the first feature is higher in horizontal height than the second feature. The first feature being "under", "below", or "underneath" the second feature can be the first feature being directly below or obliquely below the second feature, or merely means that the first feature is lower in horizontal height than the second feature.

[0037] In the description of the embodiments, the description with reference to the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0038] Figure 1 is a schematic structural diagram of a dielectric breakdown measurement circuit according to an embodiment of the present application, as shown in Figure 1 The present application provides a dielectric breakdown measurement circuit. The dielectric breakdown measurement circuit comprises an adjustable voltage source 10, a voltage dividing resistor 20, a measured circuit, and a detection circuit 40. The first end of the voltage dividing resistor 20 is electrically connected to the adjustable voltage source 10, and the second end of the voltage dividing resistor 20 is used as a voltage dividing output end. The measured circuit is electrically connected to the voltage dividing output end, and is used for connecting a wafer to be measured 30. The input end of the detection circuit 40 is electrically coupled to the voltage dividing output end, and is configured to convert the signal of the voltage dividing output end into a detection signal.

[0039] In the present application, the wafer to be measured 30 is connected to the measured circuit. Then the adjustable voltage source 10 is adjusted to make the adjustable voltage source 10 provide the required voltage value, and make the adjustable voltage source 10 work, at this time the voltage acts on the wafer to be measured 30 and the voltage dividing resistor 20. In the process of the wafer to be measured 30 being broken down, the resistance value of the wafer to be measured 30 changes, so that the voltage distributed by the voltage dividing resistor 20 and the voltage distributed by the wafer to be measured 30 change, and then the signal of the voltage dividing output end changes, and the detection signal output by the detection circuit 40 changes at the same time, so that the breakdown degree of the wafer to be measured 30 can be reflected at any time.

[0040] Specifically, the detection signal can be received by the processor, and the processor can calculate the resistance value of the wafer 30 to be tested according to the change of the detection signal, as shown in the following formula: Figure 5 and Figure 6 The effect of the electrical breakdown can be known. The dielectric breakdown measurement circuit can reflect the degree and effect of the electrical breakdown at the same time in the process of the electrical breakdown of the wafer 30 to be tested, so that the wafer can be prevented from being intermittently subjected to the dielectric breakdown, and the electrical breakdown and the detection time can be prevented from being too long, and the efficiency of the electrical breakdown, the efficiency of the electrostatic discharge of the wafer and / or the efficiency of the wafer detection can be significantly improved. In this way, the wafer can also be prevented from being damaged due to the fact that the degree of the electrical breakdown cannot be known in time in the process of the electrical breakdown, that is, the wafer has been subjected to the electrical breakdown, and the wafer continues to be subjected to the electrical breakdown due to the fact that the wafer cannot be detected in time, and the wafer is damaged. The wafer 30 to be tested can be subjected to the electrical breakdown at the same time in the process of the electrical breakdown, and the wafer can be subjected to the electrical breakdown, so that the wafer can be immediately stopped from being subjected to the breakdown voltage, and the wafer can be prevented from being damaged.

[0041] Moreover, in some embodiments of the present application, the voltage provided by the adjustable voltage source 10 can also serve as the breakdown voltage, so that the wafer 30 to be tested does not need to be provided with an additional electrical breakdown circuit, and the circuit is simple and cost-saving. In order to control the degree of the electrical breakdown, the adjustable voltage source 10 can be adjusted according to requirements, and when the voltage provided by the adjustable voltage source changes, the voltage distributed by the voltage dividing resistor 20 and the voltage distributed by the wafer 30 to be tested also change, so that the signal at the voltage dividing output end changes, and the detection signal output by the detection circuit 40 also changes, so that the change of the voltage provided by the adjustable voltage source can also be reflected. When the adjustable voltage source 10 can be adjusted according to requirements, the performance of the wafer 30 to be tested under different breakdown voltages can be compared for the same type of wafer 30 to be tested, which is beneficial to the evaluation of the performance of the wafer 30 to be tested.

[0042] In the present example, the rated voltage value of the adjustable voltage source is higher than or equal to 2000 volts, and the resistance value of the voltage dividing resistor 20 is between 100kΩ and 300kΩ.

[0043] In some embodiments of the present application, as shown in the following formula: Figures 1 to 4 The detection circuit 40 includes a voltage follower circuit, the input end of the voltage follower circuit is electrically connected to the voltage dividing output end of the voltage dividing resistor 20, and the voltage follower circuit is used to output the voltage signal generated at the voltage dividing output end. The voltage follower circuit has the characteristics of high input impedance, low output impedance and voltage gain of 1, the input impedance of the voltage follower circuit is very high, which can reduce the influence on the signal source, the output impedance of the voltage follower circuit is very low, and in an ideal case, the gain of the voltage follower circuit is 1, that is, the output voltage is equal to the input voltage.

[0044] In some embodiments of the present application, as shown in the following formula: Figures 2 to 4As shown, the voltage follower circuit mainly consists of an operational amplifier 41 and a feedback circuit, the non-inverting input terminal of the operational amplifier 41 receives the input signal, and the output terminal is connected to the inverting input terminal through a feedback resistor 45, forming a negative feedback loop. Specifically, the non-inverting input terminal of the operational amplifier 41 is electrically coupled to the voltage dividing output terminal through the protection circuit, the inverting input terminal of the operational amplifier 41 is directly or indirectly electrically coupled to the output terminal of the operational amplifier 41 through the feedback resistor 45, and the output terminal of the operational amplifier 41 serves as the output terminal of the voltage follower circuit. This connection forces the operational amplifier 41 to adjust its output voltage to equal the input voltage.

[0045] That is, when the input voltage changes, the voltage follower circuit senses this change first and attempts to amplify it when it is working. However, due to the presence of the feedback circuit, the output voltage of the amplifier will be partially or completely fed back to its input terminal and compared with the original input voltage. The result of this comparison will serve as an adjustment signal to adjust the output of the amplifier to ensure that the output voltage always closely follows the changes in the input voltage, that is, in the dielectric breakdown measurement circuit of the utility model, the voltage follower circuit can improve the measurement accuracy and stability.

[0046] In some embodiments of the utility model, as shown in Figure 3 and Figure 4 The protection circuit includes a first protection circuit 42, the first protection circuit 42 is a resistive circuit with a resistance of 50kΩ to 150kΩ, the input terminal of the first protection circuit 42 is electrically coupled to the non-inverting input terminal of the operational amplifier 41, and the output terminal of the first protection circuit 42 is grounded.

[0047] In some embodiments of the utility model, the protection circuit includes a second protection circuit 43, the second protection circuit 43 is a resistive circuit with a resistance of 0.5MΩ to 1.5MΩ, the output terminal of the second protection circuit 43 is electrically coupled to the non-inverting input terminal of the operational amplifier 41, and the input terminal of the second protection circuit 43 serves as the input terminal of the voltage follower circuit.

[0048] In some embodiments of the utility model, as shown in Figure 3 and Figure 4 The protection circuit includes a first protection circuit 42 and a second protection circuit 43.

[0049] In some embodiments of the utility model, as shown in Figures 2 to 4As shown, the second protection circuit 43 comprises a first protection resistor 431, an output end of the first protection resistor 431 serving as an output end of the second protection circuit 43, and an input end of the first protection resistor 431 serving as an input end of the second protection circuit 43. In some other embodiments of the present application, the input end of the first protection resistor 431 is electrically connected to a second protection resistor 432 of adjustable resistance. In yet some other embodiments of the present application, the input end of the first protection resistor 431 is electrically connected to the second protection resistor 432 of fixed resistance. The other end of the second protection resistor 432 is electrically coupled to the voltage dividing output end. The resistance of the first protection resistor 431 can be set according to the voltage provided by the adjustable voltage source 10. In the breakdown process of different wafers 30 to be measured, the resistance of the first protection resistor 431 can be different. The first protection resistor 431 is a resistor of adjustable resistance, such as a rheostat.

[0050] In some embodiments of the present application, the voltage following circuit outputs a voltage signal generated on the voltage dividing output end, which can be a detection signal. The output end of the voltage following circuit can be electrically coupled to the input end of the sampling circuit 50, which is used to sample the voltage signal output by the voltage following circuit, so that the detection signal is collected by the sampling circuit and then used to calculate the resistance of the wafer 30 to be measured.

[0051] In some embodiments of the present application, the output end of the voltage following circuit is electrically coupled to the input end of the filter capacitor circuit 44 and the input end of the sampling circuit 50, wherein the output end of the filter capacitor circuit 44 is grounded. That is, the voltage signal at the output end of the voltage following circuit is filtered by the filter capacitor circuit 44 and then used as a detection signal, which is collected by the sampling circuit.

[0052] In some embodiments of the present application, the measured circuit comprises a first access part 61 and a second access part 62, and the wafer 30 to be measured can be electrically connected between the first access part 61 and the second access part 62. The first access part 61 is electrically coupled to the voltage dividing output end, and the second access part 62 is grounded or electrically connected to the negative electrode of the adjustable voltage source 10. In some other embodiments of the present application, the second access part 62 is grounded or electrically connected to the negative electrode of the adjustable voltage source 10 through a resistor of adjustable resistance or fixed resistance. Further, the first access part 61 and the second access part 62 can be probes.

[0053] The present application also provides a semiconductor detection device, which comprises a device main body and the dielectric breakdown measurement circuit in any of the above embodiments. The dielectric breakdown measurement circuit is arranged on the device main body, and the device main body is used to accommodate the wafer 30 to be measured, so as to make the wafer 30 to be measured access to the measured circuit of the dielectric breakdown measurement circuit.

[0054] In some embodiments of the utility model, the semiconductor detection equipment is a charged particle beam imaging device, the charged particle beam imaging device controls the focusing state of the charged particles, makes the charged particles interact with the semiconductor sample, and performs imaging through capturing particle signals such as secondary particles and transmission particles, and can characterize the information such as the appearance, structure and composition of the sample. The commonly used charged particle beam imaging device is a scanning electron microscope, a transmission electron microscope or a focused ion beam microscope.

[0055] The dielectric breakdown measurement circuit and the semiconductor detection equipment can simultaneously detect the electrical breakdown and the breakdown degree of the wafer to be measured, improve the test efficiency, prevent the wafer to be measured from being damaged, and are simple in circuit and low in cost. According to the dielectric breakdown measurement circuit, when the resistance of the wafer to be measured is lower than 500Ω, the detection signal and the resistance of the wafer to be measured are in linear relationship, the measurement is convenient, and the real-time resistance of the wafer to be measured can be conveniently obtained, as shown in the figure. Figure 5 When the resistance of the wafer to be measured is higher than 500Ω, high detection precision is not required. Of course, the real-time resistance of the wafer to be measured can also be estimated through a fitting curve between the detection signal and the resistance, and is mainly used for real-time acquisition of the real-time resistance of the wafer to be measured when the resistance of the wafer to be measured is higher than 500Ω, as shown in the figure. Figure 6 When the resistance of the wafer to be measured is higher than 500Ω, high detection precision is not required. Of course, the real-time resistance of the wafer to be measured can also be estimated through a fitting curve between the detection signal and the resistance, and is mainly used for real-time acquisition of the real-time resistance of the wafer to be measured when the resistance of the wafer to be measured is higher than 500Ω, as shown in the figure.

[0056] At this point, those skilled in the art should realize that, although the utility model has been shown and described in detail in the text, many other variants or modifications conforming to the principles of the utility model can be directly determined or deduced according to the content disclosed by the utility model without departing from the spirit and scope of the utility model. Therefore, the scope of the utility model should be understood and recognized as covering all these other variants or modifications.

Claims

1. A dielectric breakdown measurement circuit, characterized by, The device comprises: a voltage regulator; a voltage dividing resistor, a first end of which is electrically connected to the voltage regulator, and a second end of which is a voltage dividing output end; a circuit under test, which is electrically connected to the voltage dividing output end; a detection circuit, an input end of which is electrically coupled to the voltage dividing output end, and which is configured to convert a signal at the voltage dividing output end into a detection signal.

2. The dielectric breakdown measurement circuit according to claim 1, wherein the detection circuit comprises: a voltage follower circuit, an input end of which is electrically coupled to the voltage dividing output end of the voltage dividing resistor, and which is configured to output a voltage signal generated at the voltage dividing output end.

3. The dielectric breakdown measurement circuit according to claim 2, wherein an output end of the voltage follower circuit is electrically coupled to an input end of a filter capacitor circuit and / or an input end of a sampling circuit, wherein an output end of the filter capacitor circuit is grounded, and the sampling circuit is configured to sample the voltage signal output by the voltage follower circuit.

4. The dielectric breakdown measurement circuit according to claim 2, wherein the voltage follower circuit comprises: an operational amplifier, a same direction input end of which is electrically coupled to the voltage dividing output end via a protection circuit, an opposite direction input end of which is directly or indirectly electrically coupled to an output end of the operational amplifier via a feedback resistor, and the output end of the operational amplifier is an output end of the voltage follower circuit.

5. The dielectric breakdown measurement circuit according to claim 4, wherein the protection circuit comprises a first protection circuit, which is a resistive circuit with a resistance of 50kΩ to 150kΩ, an input end of the first protection circuit is electrically coupled to the same direction input end of the operational amplifier, and an output end of the first protection circuit is grounded.

6. The dielectric breakdown measurement circuit according to claim 4, wherein the protection circuit comprises a second protection circuit, which is a resistive circuit with a resistance of 0.5MΩ to 1.5MΩ, an output end of the second protection circuit is electrically coupled to the same direction input end of the operational amplifier, and an input end of the second protection circuit is an input end of the voltage follower circuit.

7. The dielectric breakdown measurement circuit according to claim 6, wherein the second protection circuit comprises a first protection resistor, an output end of the first protection resistor is an output end of the second protection circuit, and an input end of the first protection resistor is an input end of the second protection circuit, or is electrically connected to a second protection resistor with an adjustable resistance or a fixed resistance.

8. The dielectric breakdown measurement circuit according to claim 1, wherein the circuit under test comprises a first access portion and a second access portion, the first access portion and the second access portion are configured to access a wafer under test, the first access portion is electrically coupled to the voltage dividing output end, and the second access portion is grounded or electrically connected to a negative electrode of the voltage regulator.

9. The dielectric breakdown measurement circuit according to claim 1, wherein The adjustable voltage source has a rated voltage value higher than or equal to 2000 volts, and the resistance value of the voltage dividing resistor is between 100 kΩ and 300 kΩ.

10. A semiconductor inspection apparatus characterized by comprising: Comprise: The dielectric breakdown measurement circuit according to any one of claims 1 to 9; A device body on which the dielectric breakdown measurement circuit is arranged, the device body being used to accommodate a wafer to be measured so as to cause the wafer to be measured to access the measured circuit of the dielectric breakdown measurement circuit.

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