Carrying table, radiation annealing device and radiation annealing system

Abstract

The utility model discloses a carrying platform, a radiation annealing device and a radiation annealing system, and the carrying platform comprises a main body part and a rough part. The rough part is arranged on one side of the main body part and is connected with the main body part, the rough part is provided with a rough surface, the rough surface of the rough part faces a perovskite active layer to be annealed, and the rough surface is used for scattering at least part of radiation light penetrating through the perovskite active layer; wherein the projection of the rough part, which is formed towards the perovskite active layer, covers the perovskite active layer. The carrier, the radiation annealing device and the radiation annealing system provided by the utility model are used for scattering the radiation light irradiated on the carrier, so as to increase the optical path of the radiation light in the perovskite active layer, improve the utilization rate of the radiation light and improve the crystallization quality.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of radiation annealing, especially to a carrier, radiation annealing device and radiation annealing system. BACKGROUND

[0002] The perovskite layer is one of the core components in the perovskite solar cell. When preparing the perovskite layer, a perovskite precursor solution is generally coated on a glass substrate to form a liquid perovskite active layer, and then the liquid perovskite active layer is subjected to steps such as desolventizing and annealing to obtain the required perovskite layer.

[0003] The existing technology mainly uses heat conduction annealing to treat the liquid perovskite active layer. In the heat conduction annealing method, the glass substrate coated with the perovskite active layer is generally placed on a hot plate, and then the hot plate generates heat and conducts it to the perovskite active layer through the glass substrate to anneal the perovskite active layer. This method requires the hot plate to be heated to a high temperature, and the glass substrate may be deformed under the heating of the hot plate, resulting in uneven contact between the glass substrate and the hot plate, and thus uneven distribution of heat from the hot plate to the perovskite active layer, affecting the annealing crystallization quality of the perovskite layer. UTILITY MODEL CONTENT

[0004] The utility model aims to provide a carrier, radiation annealing device and radiation annealing system for scattering the radiation light irradiated onto the carrier to increase the optical path of the radiation light in the perovskite active layer, improve the utilization rate of the radiation light, and improve the crystallization quality.

[0005] The utility model achieves the above-mentioned purpose by adopting the following technical solutions:

[0006] A carrier for a radiation annealing device, comprising:

[0007] a main body part;

[0008] a rough part arranged on one side of the main body part and connected with the main body part, the rough part being provided with a rough surface, the rough surface of the rough part facing the perovskite active layer to be annealed, and the rough surface being used for scattering at least part of the radiation light passing through the perovskite active layer;

[0009] Preferably, the rough part is integrally formed with the main body part, or the rough part is a film attached to the surface of the main body part.

[0010] Preferably, the rough part is integrally formed with the main body part, or the rough part is a film attached to the surface of the main body part.

[0011] Preferably, when the rough part is a thin film attached to the surface of the main part, the thin film is a metal thin film; when the rough part is an integral structure with the main part, the rough part is a rough structure formed on the upper side of the main part.

[0012] Preferably, when the rough part is used to contact the substrate with the perovskite active layer attached, the root mean square of the height fluctuation of the rough part is greater than 0.4 and less than 0.9, and the surface correlation length of the rough part is 0.8-1.2 times the wavelength of the radiation light.

[0013] When the rough part is used to be spaced apart from the substrate, the root mean square of the height fluctuation of the rough part is greater than 0.6 and less than 0.8, and the surface correlation length of the rough part is 0.8-1.2 times the wavelength of the radiation light.

[0014] Preferably, it further comprises an air floating module for supporting the substrate, so that the substrate and the perovskite active layer attached to the substrate are suspended relative to the stage of the radiation annealing device.

[0015] A radiation annealing device, comprising:

[0016] A radiation light source for generating radiation light for annealing treatment of a perovskite active layer;

[0017] The stage of any one of the above radiation annealing devices is distributed on opposite sides of the perovskite active layer.

[0018] Preferably, the radiation light source is any one of an ultraviolet radiation source, an infrared radiation source, and a microwave radiation source.

[0019] A radiation annealing system, comprising:

[0020] The radiation annealing device of any one of the above;

[0021] A target material, comprising a substrate and a perovskite active layer attached to the surface of the substrate, the perovskite active layer being annealed by the radiation annealing device.

[0022] Preferably, the substrate abuts against the rough part in the radiation annealing device, or the substrate is supported by an air floating module and is spaced apart from the rough part, and the distance between the substrate and the rough part is 1-100 μm.

[0023] Preferably, the substrate is FTO glass or ordinary glass, and the thickness of the substrate is 2-3.5 mm.

[0024] The perovskite active layer is any one of a MAPbI3 perovskite film, a FAPbI3 perovskite film, and a CsFAPbI3 perovskite film, and the thickness of the perovskite active layer is 400 nm to 650 nm.

[0025] Compared with the prior art, the beneficial effects of the present application at least include:

[0026] By using the radiant light as the energy source of the annealing treatment, no intermediate medium such as a glass substrate needs to be arranged for heat transfer, and the uneven heat transfer caused by the deformation of the intermediate medium is avoided, thereby effectively improving the crystallization quality of the perovskite active layer after the annealing treatment. By arranging the rough part with the rough surface, when the radiant light passes through the perovskite active layer and irradiates onto the rough surface, the radiant light can be scattered under the action of the rough part, the scattered radiant light can be shot at the perovskite active layer and repeatedly oscillated, thereby effectively increasing the optical path of the radiant light in the perovskite active layer, improving the utilization rate of the radiant light, and improving the crystallization quality. Moreover, by making the projection of the rough part formed towards the perovskite active layer cover the perovskite active layer, the radiant light passing through the perovskite active layer can be completely or substantially completely shot at the rough part located below the perovskite active layer, thereby making more radiant light be scattered at the rough part, and further improving the utilization rate of the radiant light and the annealing crystallization quality. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 is a structure schematic view of a radiation annealing device used platform according to an embodiment of the present application;

[0028] Figure 2 is a structure schematic view of a radiation annealing system according to an embodiment of the present application;

[0029] Figure 3 is a structure schematic view of a radiation annealing system according to another embodiment of the present application.

[0030] In the drawings: 100, radiation annealing device used platform; 101, main body part; 102, rough part; 200, radiant light source; 300, target material; 301, substrate; 302, perovskite active layer; 400, spacing space. DETAILED DESCRIPTION

[0031] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations may, however, be implemented in many different forms and should not be construed as limited to the implementations set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art. Like reference numerals refer to like elements throughout the various drawings.

[0032] The words for expressing position and direction described in the utility model are all explained by taking the drawings as examples, but changes can also be made according to needs, and the changes are all included in the protection scope of the utility model.

[0033] As Figure 1 shown, the utility model provides a kind of radiation annealing device with platform 100, including main part 101 and rough part 102.

[0034] Rough part 102 is provided with rough surface, and rough part 102 is arranged at the side of main part 101 and is connected with main part 101, specifically, rough part 102 can be arranged at the upper side of main part 101.Rough part 102 can be integrally formed with main part 101, for example, platform 100 is formed by a big marble platform, and the upper surface of the marble platform is made into rough surface by etching process, and the part of the upper side of the marble platform forming rough surface is rough part 102, and the part below rough part 102 is main part 101.

[0035] Alternatively, rough part 102 and main part 101 can be two components connected with each other, for example, main part 101 can be a marble platform, and rough part 102 can be a film fixedly attached to main part 101, which is preferably a metal film made of metal material, and the material of the metal film is specifically one of silver, copper, aluminum, tin and the like.Rough part 102 is specifically formed on main part 101 by sputtering or evaporation, etc.Rough part 102 can also adopt other film structures with high reflectivity in addition to metal film.

[0036] Referring to Figure 2 , the rough surface of rough part 102 faces perovskite active layer 302 needing annealing treatment.Perovskite active layer 302 is formed by coating liquid perovskite precursor solution on substrate 301, and perovskite active layer 302 can be formed by transparent intermediate phase film after preliminary removal, so that perovskite active layer 302 has light transmission, and substrate 301 can be specifically a light-transmitting glass substrate.Perovskite active layer 302 is annealed by radiation light, perovskite active layer 302 has light transmission, and radiation light can pass through perovskite active layer 302 and substrate 301 to irradiate the rough surface of rough part 102.

[0037] The surface of the partial carrier is a smooth surface. When the radiation light passes through the perovskite active layer 302 and the substrate 301 and irradiates the smooth surface, the radiation light is substantially reflected by the smooth surface along the original path. The radiation light reflected by the smooth surface passes through the perovskite active layer 302 and is dissipated in the environment. The optical path of the radiation light in the perovskite active layer 302 is related to the thickness of the perovskite active layer 302. Due to the limited thickness of the perovskite active layer 302, the optical path of the radiation light in the perovskite active layer 302 is short, which causes the perovskite active layer 302 to only absorb part of the radiation light, and the remaining part of the radiation light is wasted. The original path of the radiation light is the light path of the radiation light passing through the perovskite active layer 302 and irradiating the carrier. The radiation light specifically passes through the perovskite active layer 302 along a vertical path and irradiates the carrier.

[0038] In the present application, by providing the rough part 102 on the carrier, the surface of the rough part 102 forms a rough surface. When the radiation light irradiates the rough surface of the rough part 102, part of the radiation light may be reflected by the rough part 102 along the original path, and part of the radiation light may be scattered under the action of the rough part 102. The reflected radiation light exits toward the perovskite active layer 302 along the original path and passes through the perovskite active layer 302, and the optical path of the part of the radiation light in the perovskite active layer 302 is short. Part of the radiation light is attenuated and scattered in various directions. At least part of the radiation light scattered under the action of the rough part 102 irradiates the perovskite active layer 302 and repeatedly oscillates, so that the optical path of the part of the radiation light in the perovskite active layer 302 is significantly increased, the absorption amount of the perovskite active layer 302 to the radiation light is increased, and the utilization rate of the radiation light is improved, and the crystalline quality is improved. The radiation light reflected by the rough part 102 is a mirror reflection component, which can also be referred to as a coherent component. The radiation light scattered under the action of the rough part 102 is a diffuse component, which can also be referred to as a non-coherent component.

[0039] To ensure that the radiation light passing through the perovskite active layer 302 can completely or substantially completely irradiate the rough part 102, the projection of the rough part 102 toward the perovskite active layer 302 covers the perovskite active layer 302, so that part located below the perovskite active layer 302 is occupied by the rough part 102, and thus the radiation light passing through the perovskite active layer 302 can completely or substantially completely irradiate the rough part 102 located below the perovskite active layer 302. Specifically, the surface area of the rough part 102 is greater than the surface area of the perovskite active layer 302, and the rough part 102 can be centrally arranged with the perovskite active layer 302.

[0040] Referring to Figure 2The rough part 102 can be in contact with the substrate 301 on which the perovskite active layer 302 is attached. For example, the rough part 102 is used to abut against the substrate 301 so that the radiation annealing device can be used to support the substrate 301 in a contact manner. At this time, the radiation light scattered from the rough part 102 directly enters the substrate 301, and then the radiation light passes through the substrate 301 and enters the perovskite active layer 302 and is reflected by the perovskite active layer 302 back to the substrate 301 and to the rough part 102; therefore, the radiation light can repeatedly oscillate. Specifically, the radiation light can vertically enter the perovskite active layer 302, then vertically pass through the perovskite active layer 302 and the substrate 301 and enter the rough part 102, the radiation light is reflected and scattered at the rough part 102, the reflected radiation light passes through the perovskite active layer 302 and the substrate 301 along a vertical path, the direction of the scattered radiation light changes, the scattered radiation light enters the perovskite active layer 302 along an inclined path, the scattered radiation light is reflected by the upper surface of the perovskite active layer 302 to the rough part 102 when the scattered radiation light enters the lower surface of the perovskite active layer 302, and the scattered radiation light repeatedly between the perovskite active layer 302 and the rough part 102 so that the part of the radiation light repeatedly oscillates.

[0041] When the roughness of the rough part 102 is low, the coherent component is dominant and the incoherent component is weak, at this time, only a small amount of radiation light is scattered under the action of the rough part 102. When the roughness of the rough part 102 is high, the incoherent component is dominant and the coherent component is weak, at this time, a large amount of radiation light is scattered under the action of the rough part 102.

[0042] When the radiation light is scattered at the rough part 102, there can be part of the scattered radiation light passing through the substrate 301 and directly entering the environment from the substrate 301 without entering the perovskite active layer 302. As the roughness of the rough part 102 increases, the scattering range of the scattered radiation light under the action of the rough part 102 is also larger, at this time, the radiation light directly entering the environment without entering the perovskite active layer 302 is also more. The wavelength λ of the radiation light and the roughness of the rough part 102 both affect the scattering range of the radiation light, in order to make the radiation light scattered under the action of the rough part 102 can enter the perovskite active layer 302 to a greater extent and greatly increase the optical path of the radiation light in the perovskite active layer 302, to ensure the utilization efficiency of the radiation light, the height fluctuation root mean square δ of the rough part 102 can be greater than 0.4 and less than 0.9, the surface correlation length l of the rough part 102 is roughly the same as the wavelength of the radiation light, for example, the surface correlation length l of the rough part 102 is 0.8-1.2 times the wavelength of the radiation light.

[0043] wherein the root mean square of the height fluctuation δ and the surface correlation length l are used to jointly represent the roughness of the rough part 102. The root mean square of the height fluctuation δ represents the degree of deviation from the average height

[0044] In the formula for calculating the root mean square of the height fluctuation δ, z is the vertical distance between the highest point of the rough part 102 and the lower surface of the rough part 102, i.e. the maximum height of the rough part 102, in the part of the rough part 102 below the substrate 301. is the average height of each point in the part of the rough part 102 below the substrate 301. When the rough part 102 is a thin film structure with high reflectivity, the lower surface of the rough part 102 is the contact surface between the rough part 102 and the main part 101; when the rough part 102 and the main part 101 are an integral structure, the rough part 102 can be assumed to have the same structure as the thin film structure of the rough part 102, and the virtual contact surface between the rough part 102 and the main part 101 is the lower surface of the rough part 102. The surface correlation length l represents the density of the surface fluctuation of the rough part 102.

[0045] The physical surface height can be approximately considered to follow a Gaussian distribution or an exponential distribution, and the correlation degree of any two points on the surface of the rough part 102 with a horizontal distance of r is described by the autocorrelation function. The Gaussian distribution correlation function is: The exponential distribution function is: When r = 0, ρ(r) = δ 2 , as r increases, the value of ρ(r) gradually decreases, and when r tends to infinity, ρ(r) tends to 0. When the correlation coefficient ρ(r) drops to , the horizontal interval r of the two points is defined as the surface correlation length l.

[0046] Referring to Figure 3 In other embodiments, the rough part 102 can also be arranged to be spaced apart from the substrate 301. Specifically, the rough part 102 and the substrate 301 are arranged to be spaced apart and form a spacing space 400. By spacing the substrate 301 and the rough part 102, heat transfer caused by contact between the substrate 301 and the rough part 102 can be reduced or avoided, thereby avoiding the temperature difference between different parts of the substrate 301, and thus affecting the uniformity of annealing and the crystalline quality of annealing.

[0047] ​In order to enable the roughness 102 to be spaced apart from the substrate 301, the radiation annealing device support 100 further comprises an air floating module for supporting the substrate 301 so as to be suspended relative to the radiation annealing device support 100. In addition, the radiation annealing device support 100 can also support the substrate 301 by other components, for example, the radiation annealing device support 100 is provided with a clamping component which clamps and fixes the substrate 301 above the roughness 102 and is spaced apart from the roughness 102. Preferably, in the present embodiment, the radiation annealing device support 100 supports the substrate 301 by providing an air floating module. The structure of the air floating module supporting part and the structure of the clamping component clamping corresponding part can adopt existing air floating modules and clamping components, and thus will not be described here.

[0048] The part of the scattered radiation light under the action of the roughness 102 can pass through the spacing space 400 or the substrate 301 and directly shoot to the outside world without entering the perovskite active layer 302. With the increase of the roughness degree of the roughness 102, the scattering range of the scattered radiation light under the action of the roughness 102 is also larger, at this time, more radiation light is directly scattered to the environment and enters the perovskite active layer 302. The wavelength λ of the radiation light and the roughness degree of the roughness 102 both affect the scattering range of the radiation light, and the scattered radiation light can directly enter the outside world from the spacing space 400 or the substrate 301. In order to enable the scattered radiation light under the action of the roughness 102 to enter the perovskite active layer 302 to a greater extent and greatly increase the optical path of the radiation light in the perovskite active layer 302, so as to ensure the utilization efficiency of the radiation light, the root mean square δ of the height fluctuation of the roughness 102 can be greater than 0.6 and less than 0.8, and the surface correlation length l of the roughness 102 is approximately the same as the wavelength of the radiation light, for example, the surface correlation length l of the roughness 102 is 0.8-1.2 times the wavelength of the radiation light.

[0049] With reference to Figure 2 and Figure 3 , the present embodiment also provides a radiation annealing device, comprising a radiation light source 200 and the above-mentioned radiation annealing device support 100.

[0050] The radiation light source 200 is configured to generate radiation light, and the radiation light is emitted from the radiation light source 200 towards the perovskite active layer 302. When the radiation light is irradiated on the perovskite active layer 302, the perovskite active layer 302 can absorb the energy of the radiation light, so that the radiation light can heat the perovskite active layer 302 and perform annealing treatment on the perovskite active layer 302. The radiation light source 200 can be a mercury lamp, a xenon lamp or other ultraviolet radiation source, and the radiation light can be ultraviolet radiation light. Alternatively, the radiation light source 200 can be other devices that can be used as a radiation annealing light source, such as an infrared radiation source, a laser radiation source or a microwave radiation source.

[0051] The carrier and the radiation light source 200 are arranged on opposite sides of the perovskite active layer 302. The radiation light passing through the perovskite active layer 302 and the substrate 301 is irradiated on the rough part 102 of the carrier, and the rough part 102 reflects and scatters the radiation light, so that the radiation light can be re-emitted towards the perovskite active layer 302.

[0052] Specifically, the radiation light can be vertically emitted towards the perovskite active layer 302, then vertically pass through the perovskite active layer 302 and the substrate 301 and be emitted towards the rough part 102. The radiation light is reflected and scattered at the rough part 102. The reflected radiation light passes through the substrate 301 and the perovskite active layer 302 along a vertical path. The direction of the scattered radiation light changes, and the scattered radiation light is emitted towards the perovskite active layer 302 along an inclined path. When the scattered radiation light is emitted from the lower surface of the perovskite active layer 302 towards the upper surface, it is reflected by the upper surface of the perovskite active layer 302 to the rough part 102. The scattered radiation light repeatedly between the perovskite active layer 302 and the rough part 102, so that the part of the radiation light repeatedly oscillates.

[0053] The embodiment also provides a radiation annealing system, which comprises the target material 300 and the radiation annealing device.

[0054] The target material 300 specifically comprises the substrate 301 and the perovskite active layer 302 attached to the surface of the substrate 301. The perovskite active layer 302 is annealed by the radiation annealing device, so that the perovskite active layer 302 is formed into a solid perovskite layer with a liquid film structure after the annealing treatment. The perovskite active layer 302 can be any one of a MAPbI3 perovskite thin film, a FAPbI3 perovskite thin film and a CsFAPbI3 perovskite thin film. The thickness of the perovskite active layer 302 can be 400-650 nm. The substrate 301 can be FTO glass or ordinary glass. The ordinary glass is glass without other treatments such as doping. The chemical composition of the ordinary glass can be Na2SiO3, CaSiO3, SiO2 or Na2O·CaO·6SiO2. The thickness of the substrate 301 can be 2-3.5 mm.

[0055] With reference to Figure 2 , the target material 300 can be directly placed on the rough part 102, so that the substrate 301 of the target material 300 directly abuts against the rough part 102, and the rough part 102 supports the target material 300. The size of the target material 300 can be 300mm*300mm-400mm*500mm, specifically, the width of the substrate 301 and the perovskite active layer 302 in the target material 300 can be 300mm-400mm, and the length of the substrate 301 and the perovskite active layer 302 in the target material 300 can be 300mm-500mm. At this time, the wavelength of the radiation light can be specifically 200nm-2μm.

[0056] Alternatively, with reference to Figure 3 , the target material 300 can be arranged in a spaced manner with the rough part 102, for example, the substrate 301 of the target material 300 is supported by an air floating module to be arranged in a spaced manner with the rough part 102, and the spacing h between the substrate 301 and the rough part 102 can be 1μm-100μm. The spacing between the substrate 301 and the rough part 102 is preferably the minimum spacing between the substrate 301 and the rough part 102. At this time, the size of the target material 300 can be 0.6m*1m-1.2m*2.4m, specifically, the width of the substrate 301 and the perovskite active layer 302 in the target material 300 can be 0.6m-1.2m, and the length of the substrate 301 and the perovskite active layer 302 in the target material 300 can be 1m-2.4m. At this time, the wavelength of the radiation light can be specifically 380nm-10μm.

[0057] Although the embodiments of the utility model have been shown and described above, it can be understood that the above-mentioned embodiments are exemplary and cannot be understood as limiting the utility model, and the person skilled in the art can change, modify, replace and modify the above-mentioned embodiments within the scope of the utility model without departing from the principles and purposes of the utility model, all these changes should belong to the protection scope of the utility model claim.

Claims

1. A stage for a radiation annealing apparatus, characterized by, It comprises: a main body (101); a rough part (102) arranged on one side of the main body (101) and connected with the main body (101), the rough part (102) is provided with a rough surface, the rough surface of the rough part (102) faces the perovskite active layer (302) to be annealed, and the rough surface is used for scattering at least part of the radiation light passing through the perovskite active layer (302); Wherein, the projection formed by the rough part (102) towards the perovskite active layer (302) covers the perovskite active layer (302).

2. The stage for a radiation annealing apparatus according to claim 1, wherein The rough part (102) and the main body (101) are integrated structure, or the rough part (102) is a thin film attached to the surface of the main body (101).

3. The stage for a radiation annealing apparatus according to claim 2, wherein When the rough part (102) is a thin film attached to the surface of the main body (101), the thin film is a metal thin film; when the rough part (102) and the main body (101) are integrated structure, the rough part (102) is a rough structure formed on the upper side of the main body (101).

4. The stage for a radiation annealing apparatus according to claim 1, wherein When the rough part (102) is used to contact the substrate (301) with the perovskite active layer (302) attached thereto, the root mean square of the height fluctuation of the rough part (102) is greater than 0.4 and less than 0.9, and the surface correlation length of the rough part (102) is 0.8-1.2 times the wavelength of the radiation light; When the rough part (102) is used to be arranged at intervals with the substrate (301), the root mean square of the height fluctuation of the rough part (102) is greater than 0.6 and less than 0.8, and the surface correlation length of the rough part (102) is 0.8-1.2 times the wavelength of the radiation light.

5. The stage for a radiation annealing apparatus according to claim 4, wherein It also comprises an air floating module for supporting the substrate (301), so that the substrate (301) and the perovskite active layer (302) attached to the substrate (301) are suspended relative to the radiation annealing device stage.

6. A radiation annealing apparatus, characterized by comprising: It comprises: a radiation light source (200) for generating radiation light, the radiation light is used for annealing treatment of perovskite active layer (302); The radiation annealing device stage (100) of any one of claims 1 to 5, the stage (100) and the radiation light source (200) are distributed on the opposite sides of the perovskite active layer (302).

7. The radiation annealing device of claim 6, wherein The radiation light source (200) is any one of ultraviolet radiation source, infrared radiation source, microwave radiation source.

8. A radiation annealing system, characterized by, It comprises: The radiation annealing device of claim 6 or 7; Target material (300) comprising substrate (301) and perovskite active layer (302) attached to the surface of the substrate (301), the perovskite active layer (302) is annealed by the radiation annealing device.

9. The radiation annealing system of claim 8, wherein, The substrate (301) is in contact with the rough part (102) in the radiation annealing device, or the substrate (301) is supported by the air floating module and arranged at intervals with the rough part (102), and the distance between the substrate (301) and the rough part (102) is 1-100 μm.

10. The radiation annealing system of claim 8, wherein, The substrate (301) is FTO glass or ordinary glass, and the thickness of the substrate (301) is 2mm-3.5mm. The perovskite active layer (302) is any one of MAPbI3 perovskite thin film, FAPbI3 perovskite thin film, and CsFAPbI3 perovskite thin film, and the thickness of the perovskite active layer (302) is 400nm-650nm.

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