Universal IGBT (Insulated Gate Bipolar Translator) driving power supply circuit

Abstract

The utility model provides a universal IGBT driving power supply circuit. The universal IGBT driving power supply circuit comprises an IGBT driving power supply primary side circuit and an IGBT driving power supply secondary side circuit. The primary side of the IGBT driving power supply is built by depending on a control system power supply, the primary side circuit of the IGBT driving power supply comprises a self-excited oscillation chip, an MOS (Metal Oxide Semiconductor) tube chip and a transformer primary side, the secondary side circuit of the IGBT driving power supply is connected with secondary windings, each secondary winding provides power for one IGBT driver, one end of each secondary winding is connected with a diode, and the other end of each secondary winding is connected with a transformer. And a voltage-regulator tube and a divider resistor are also connected between the output end of the diode and the other end of the secondary winding. The secondary side of the IGBT driving power supply uses the voltage-regulator tube and the resistor for voltage division, so that the IGBT driving power supply has the capability of reliably switching on and switching off the IGBT, and is relatively low in cost and relatively low in loss; through a self-oscillation signal of a primary side, the primary side voltage establishment of a plurality of transformers can be realized, and a plurality of IGBT driving power supplies can be controlled.

Description

Technical Field

[0001] This utility model belongs to the field of IGBT drive power supply technology, and in particular relates to a general-purpose IGBT drive power supply circuit. Background Technology

[0002] In the current field of power electronics, Insulated Gate Bipolar Transistors (IGBTs) are widely used in various high-power devices. However, building a stable and low-cost IGBT driver power supply has always been a challenge for engineers. Existing primary-side solutions mainly include two types: one is to integrate the IGBT driver power supply into the same switching power supply, implemented through transformer windings; the other is to use the control system power supply voltage in conjunction with a dedicated driver module. The former requires customized design for different products, making it difficult to achieve universality; the latter, although more standardized, is more expensive and has limited structural size. In addition, secondary-side solutions such as capacitor voltage dividers, resistor voltage dividers, linear regulators, and voltage doubler rectifier circuits also have problems such as insufficient accuracy, large heat loss, and short lifespan, making it difficult to ensure reliable IGBT turn-on and turn-off. Utility Model Content

[0003] To address the problems existing in the prior art, this utility model provides a universal IGBT drive power supply circuit, comprising: a primary side circuit and a secondary side circuit of the IGBT drive power supply; the primary side of the IGBT drive power supply is built upon the power supply of the control system, and the primary side circuit of the IGBT drive power supply includes a self-excited oscillation chip, a MOSFET chip, and the primary side of a transformer. The control system power supply outputs two complementary PWM square waves through the self-excited oscillation chip, and the PWM square waves are input to the MOSFET chip. The output signal of the MOSFET chip is connected to the primary side of the transformer; the secondary side circuit of the IGBT drive power supply is connected to the secondary winding, and each secondary winding provides power for one IGBT drive. One end of the secondary winding is connected to a diode, and an electrolytic capacitor is connected between the output end of the diode and the other end of the secondary winding. A Zener diode and a voltage divider resistor are also connected between the output end of the diode and the other end of the secondary winding. The intermediate potential between the Zener diode and the voltage divider resistor is connected to the emitter of the IGBT. The other end of the Zener diode is connected to the positive terminal of the secondary side of the IGBT drive power supply, and the other end of the voltage divider resistor is connected to the negative terminal of the secondary side of the IGBT drive power supply.

[0004] Based on the above scheme, the MOS transistor chip can provide alternating signals to the primary side of multiple transformers.

[0005] Based on the above scheme, the primary side circuit of the driving power supply includes an adjustment resistor and an adjustment capacitor for adjusting the frequency of the PWM square wave, and the PWM square wave is connected to the MOS transistor chip via a driving resistor.

[0006] Based on the above scheme, the secondary winding has two paths, each providing power to one IGBT driver. The terminals of the two secondary windings with the same name are opposite to the terminals connected to the positive terminal of the electrolytic capacitor. Both the positive and negative half-cycles of the primary side voltage can be transferred through the secondary winding.

[0007] Based on the above scheme, in the secondary side circuit of the driving power supply, a ceramic capacitor is connected in parallel with the electrolytic capacitor, and a current-limiting resistor is connected in series between the secondary winding and the diode.

[0008] Based on the above scheme, a capacitor is used to divide the voltage for the positive and negative half cycles on the primary side. The first drain D1 is connected to the second terminal of the primary side of the transformer, and a first voltage divider capacitor C5 is connected between the first drain D1 and the second terminal of the primary side of the transformer. The second drain D2 is connected to the first terminal of the primary side of the transformer, and the current passes through the second terminal and then through the second voltage divider capacitor C4.

[0009] Based on the above scheme, according to the primary winding voltage of the transformer, a suitable winding turns ratio is selected to achieve a secondary winding voltage of 22V. The breakdown voltage of the Zener diode is 15V. The other end of the Zener diode is connected to the positive secondary side of the IGBT drive power supply to provide a +15V voltage. The other end of the voltage divider resistor is connected to the negative secondary side of the IGBT drive power supply to provide a -7V voltage, thereby realizing the IGBT's turn-on and turn-off.

[0010] Compared with the prior art, this utility model has the following advantages: The primary side of the IGBT drive power supply is built using a control system power supply, allowing for flexible arrangement of components according to structural requirements; the secondary side of the IGBT drive power supply uses Zener diodes and resistors for voltage division, providing reliable IGBT turn-on and turn-off capabilities with lower cost and losses; the self-oscillation signal of one primary side enables the establishment of primary voltages for several transformers, controlling multiple IGBT drive power supplies; a capacitor is used for voltage division during the positive and negative half-cycles of the primary side, achieving voltage smoothing and stability. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the primary side circuit of the IGBT drive power supply in this application;

[0012] Figure 2 This is a schematic diagram of the secondary side circuit of the IGBT drive power supply in this application; Detailed Implementation

[0013] The utility model will be further described below with reference to specific embodiments.

[0014] Since most industrial products have their own control system power supply, this application directly utilizes the control system power supply to build the primary side of the IGBT driver power supply, which can be adapted to the vast majority of industrial products.

[0015] like Figure 1 and Figure 2 As shown, this utility model provides a general-purpose IGBT drive power supply circuit, including an IGBT drive power supply primary side circuit and an IGBT drive power supply secondary side circuit. The IGBT drive power supply primary side is built on the control system power supply. Since the control system power supply of general industrial products is a 24V or 12V DC power supply, the control system power supply in this application is a 24V or 12V DC power supply.

[0016] The primary side circuit of the IGBT driver power supply includes a self-oscillating chip, a MOSFET chip, and the primary side of a transformer. The control system power supply outputs two complementary PWM square waves through the self-oscillating chip. The PWM square waves are input to the MOSFET chip, and the output signal of the MOSFET chip is connected to the primary side of the transformer. The primary side circuit of the driver power supply includes an adjusting resistor R2 and an adjusting capacitor C2 for adjusting the frequency of the PWM square waves. A driving resistor is connected between the PWM square waves and the MOSFET chip.

[0017] Furthermore, the MOSFET chip can provide alternating signals to the primary side of multiple transformers. The MOSFET chip has multiple independent channels, which can be connected to the primary side of multiple transformers, meaning that multiple transformer primary-side voltages can be established through a self-oscillating signal from one primary side. According to one embodiment of this application, the MOSFET chip has two independent channels. The self-oscillating chip outputs two complementary PWM square waves, which are respectively input to the two independent channels of the MOSFET chip. The two independent channels control two MOSFETs respectively. Resistors R3 and R4 are the driving resistors for the two MOSFETs. This application allows adjustment of the driving resistor values ​​according to different MOSFET selections. Under the control of the PWM square waves, the two MOSFETs alternately conduct, causing the primary side of the transformer to alternately reach a high level, thereby outputting alternating current. This application utilizes transformers to transfer energy, thereby achieving magnetic isolation, which not only improves system safety but also reduces electromagnetic interference.

[0018] Specifically, the first gate G1 of the MOS transistor chip is connected to one output terminal of the self-excited oscillator chip through the drive resistor R3, and the first drain D1 is connected to one end of the primary side of the transformer; the second gate G2 is connected to the other output terminal of the self-excited oscillator chip through the drive resistor R4, and the second drain D2 is connected to the other end of the primary side of the transformer.

[0019] According to one embodiment of this application, a capacitor is used for voltage division during the positive and negative half-cycles of the primary side, specifically, as follows: Figure 1As shown, the first drain D1 is connected to the second terminal of the primary side of the transformer. A first voltage-dividing capacitor C5 is connected between the first drain D1 and the second terminal of the primary side of the transformer. When the first drain D1 has an output signal, the second terminal of the primary side of the transformer is at a high level. The second drain D2 is connected to the first terminal of the primary side of the transformer. When the second drain D2 has an output signal, the first terminal of the primary side of the transformer is at a high level. The current flows through the second terminal and then through the second voltage-dividing capacitor C4. Using capacitors to divide the voltage in the primary side circuit can reduce the ripple component in the output voltage, achieving voltage smoothness and stability.

[0020] The secondary circuit of the IGBT driver power supply includes a transformer secondary side, which comprises multiple secondary windings, each providing power to one IGBT driver. Due to the requirement for stable and precise gate control voltage, the secondary circuit of the IGBT driver power supply needs to provide DC power to the IGBT driver. In this application, a diode is used for rectification; specifically, one end of the secondary winding is connected to a diode. To store energy, an electrolytic capacitor is connected between the output terminal of the diode and the other end of the secondary winding. A Zener diode and a voltage divider resistor are also connected between the output terminal of the diode and the other end of the secondary winding. The midpoint potential between the Zener diode and the voltage divider resistor is connected to the emitter of the IGBT. The other end of the Zener diode is connected to the positive terminal VCC of the IGBT driver power supply, and the other end of the voltage divider resistor is connected to the negative terminal VEE of the IGBT driver power supply.

[0021] According to one embodiment of this application, such as Figure 2 As shown, the transformer has two independent secondary windings on the secondary side. Each secondary winding provides power to one IGBT driver. The terminals of the two secondary windings with the same name are opposite to the terminals connected to the positive terminal of the electrolytic capacitor. Both the positive and negative half-cycles of the primary side voltage can be transferred through the secondary windings. Specifically, when a positive voltage is applied to the primary side, a positive voltage is generated at the terminal of the first secondary winding with the same name. This voltage directs current through the first rectifier diode D2 to charge the first electrolytic capacitor C8, simultaneously supplying power to the first IGBT driver. A positive voltage is also generated at the terminal of the second secondary winding with the same name, causing the second electrolytic capacitor C12 to release its stored energy, supplying power to the second IGBT driver.

[0022] When a negative voltage is applied to the primary side, the situation reverses. A negative voltage is generated at the same-name terminal of the first primary winding, and the first electrolytic capacitor C8 discharges, continuing to supply power to the first IGBT drive. A positive voltage is generated at the opposite-name terminal of the second primary winding, and the current is directed to the second electrolytic capacitor C12 through the second rectifier diode D4 to charge it, while simultaneously supplying power to the second IGBT drive.

[0023] like Figure 2As shown in the first secondary winding, the same-name terminal of the secondary winding is connected to diode D2. An electrolytic capacitor C8 is connected between the output terminal of the diode and the other end of the secondary winding. A Zener diode D3 and a voltage divider resistor R7 are also connected between the output terminal of the diode and the other end of the secondary winding. The Zener diode and the voltage divider resistor are connected in parallel with the electrolytic capacitor. The two ends of the Zener diode D3 are connected to the first capacitor C7, and the two ends of the voltage divider resistor R7 are connected to the second capacitor C10.

[0024] Based on the primary winding voltage of the transformer, a suitable winding turns ratio is selected to achieve a secondary winding voltage of 22V. The breakdown voltage of the Zener diode is 15V. The other end of the Zener diode is connected to the positive secondary side of the IGBT drive power supply, providing a +15V voltage. The other end of the voltage divider resistor is connected to the negative secondary side (VEE) of the IGBT drive power supply, providing a -7V voltage, thus enabling the IGBT to turn on and off. When the primary side control signal of the IGBT drive power supply is high, the secondary side outputs VCC, meaning the IGBT's GE voltage is approximately 15V, and the IGBT is turned on. When the primary side control signal of the IGBT drive power supply is low, the secondary side outputs VEE, meaning the IGBT's GE voltage is approximately -7V, and the IGBT is turned off.

[0025] To reduce the impact of high-frequency ripple, a ceramic capacitor is connected in parallel across the electrolytic capacitor. At the same time, to prevent damage to circuit components due to excessive output current from the secondary winding when the electrolytic capacitor is initially powered on and there is no voltage in it, a current-limiting resistor is connected in series between the secondary winding and the diode.

[0026] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0027] While the specific embodiments of this utility model have been described above, they are not intended to limit the scope of protection of this utility model. Those skilled in the art should understand that various modifications or variations that can be made by those skilled in the art without creative effort based on the technical solution of this utility model are still within the scope of protection of this utility model.

Claims

1. A general-purpose IGBT drive power supply circuit, characterized in that, include: IGBT drive power supply primary side circuit and IGBT drive power supply secondary side circuit; The primary side of the IGBT drive power supply is built upon the control system power supply. The primary side circuit of the IGBT drive power supply includes a self-oscillating chip, a MOSFET chip, and the primary side of a transformer. The control system power supply outputs two complementary PWM square waves through the self-oscillating chip. The PWM square waves are input to the MOSFET chip, and the output signal of the MOSFET chip is connected to the primary side of the transformer. The secondary side circuit of the IGBT drive power supply is connected to the secondary winding. Each secondary winding provides power for one IGBT drive. One end of the secondary winding is connected to a diode. An electrolytic capacitor is connected between the output of the diode and the other end of the secondary winding. A Zener diode and a voltage divider resistor are also connected between the output of the diode and the other end of the secondary winding. The midpoint between the Zener diode and the voltage divider resistor is connected to the emitter of the IGBT. The other end of the Zener diode is connected to the positive terminal of the secondary side of the IGBT drive power supply, and the other end of the voltage divider resistor is connected to the negative terminal of the secondary side of the IGBT drive power supply.

2. The universal IGBT drive power supply circuit according to claim 1, characterized in that, The MOS transistor chip can provide alternating signals to the primary side of multiple transformers.

3. The universal IGBT drive power supply circuit according to claim 1, characterized in that, The primary circuit of the drive power supply includes an adjustment resistor and an adjustment capacitor for adjusting the frequency of the PWM square wave. The PWM square wave is connected to the MOS transistor chip via a drive resistor.

4. A general-purpose IGBT drive power supply circuit according to claim 2, characterized in that, The secondary winding has two paths, each providing power to one IGBT driver. The terminals of the two secondary windings with the same name are opposite to the terminals connected to the positive terminal of the electrolytic capacitor. Both the positive and negative half-cycles of the primary side voltage can be transferred through the secondary winding.

5. A general-purpose IGBT drive power supply circuit according to claim 1, characterized in that, In the secondary side circuit of the drive power supply, a ceramic capacitor is connected in parallel with the electrolytic capacitor, and a current-limiting resistor is connected in series between the secondary winding and the diode.

6. A general-purpose IGBT drive power supply circuit according to claim 1, characterized in that, The primary side uses a capacitor to divide the voltage for the positive and negative half-cycles respectively. The first drain is connected to the second terminal of the primary side of the transformer, and a first voltage divider capacitor is connected between the first drain and the second terminal of the primary side of the transformer. The second drain is connected to the first terminal of the primary side of the transformer, and the current passes through the second terminal and then through the second voltage divider capacitor.

7. A general-purpose IGBT drive power supply circuit according to claim 1, characterized in that, Based on the primary winding voltage of the transformer, the winding turns ratio is selected to achieve a secondary winding voltage of 22V. The breakdown voltage of the Zener diode is 15V. The other end of the Zener diode is connected to the positive secondary side of the IGBT drive power supply to provide a +15V voltage. The other end of the voltage divider resistor is connected to the negative secondary side of the IGBT drive power supply to provide a -7V voltage, thereby realizing the IGBT's turn-on and turn-off.

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