Substrate structure, intelligent power module, controller and electric appliance

Abstract

The utility model discloses a substrate structure, an intelligent power module, a controller and an electric appliance, and relates to the technical field of semiconductors. The utility model comprises a ceramic copper-clad substrate and a plurality of connecting cylinders, wherein the ceramic copper-clad substrate is provided with at least two upper core areas. The joining cylinders are fixedly connected to the ceramic copper-clad substrate, surround each upper core area, and are electrically connected with the middle area of the bonding wire. Therefore, the connecting column body can be used as a middle connecting point of the bonding wire, the bonding wire can be bent to form a plurality of wire segments in the electrical connection process to reduce cross contact between the bonding wires under the condition that a new chip is added, the problem that the bonding wire collapses due to an overlong wire arc and is in contact with other bonding wires is solved, and the bonding wire quality is improved. The structure compatibility of the substrate structure of the intelligent power module is improved, the production cost of the intelligent power module during product iteration is reduced, and the research and development period is shortened.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to substrate structure, intelligent power module, controller and electrical appliance. Background Technology

[0002] An Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It is primarily used to control and drive high-power electronic devices, such as AC motor drivers, frequency converters, and inverters. For example, an IPM module can convert rectified and filtered DC power into adjustable-frequency three-phase power, changing the motor speed by altering the frequency of the output current.

[0003] IPM modules typically require wire bonding for internal electrical interconnection of components. During this process, it's crucial to avoid cross contact and excessively long wire arcs between wires. Cross contact can lead to short circuits and damage the IPM module, while excessively long arcs increase the risk of contact between adjacent wires. To mitigate these issues, current IPM modules generally design their copper-clad ceramic substrates based on the number and structure of driver and power chips. However, adding new driver or power chips necessitates redesigning the IPM module's copper-clad ceramic substrate, increasing production costs and extending the development cycle. Utility Model Content

[0004] To address the issue that the current design of copper-clad ceramic substrates for IPM modules is unique, requiring redesign of the copper-clad ceramic substrate during product iterations, thus increasing R&D cycle and production costs, this utility model is proposed to provide a substrate structure, intelligent power module, controller, and electrical components that overcome or at least partially solve the aforementioned problems.

[0005] Based on a first aspect of the present invention, a substrate structure is provided, the substrate structure comprising:

[0006] A ceramic copper-clad substrate, wherein at least two upper core regions are provided on the ceramic copper-clad substrate;

[0007] Multiple connecting pillars are fixedly connected to the ceramic copper-clad substrate, and the multiple connecting pillars surround each of the upper core area, and the connecting pillars are electrically connected to the middle area of ​​the bonding wire.

[0008] One optional utility model involves forming multiple interconnected pillars evenly spaced around the same upper core region.

[0009] In one optional utility model, among the plurality of connecting pillars forming a surrounding structure for the same upper core region, the distance between two adjacent connecting pillars is set within 0.3 mm to 0.4 mm.

[0010] One optional utility model involves multiple connecting pillars that completely surround the upper core region.

[0011] In one optional utility model, the connecting column extends upward along the surface of the ceramic copper-clad substrate to a height of 0.3 mm to 0.4 mm.

[0012] In one optional utility model, the connecting column further includes a body and a conductive layer, the conductive layer covering the outer surface of the body, and the bonding wires being bonded to the conductive layer.

[0013] One optional utility model involves the body and the ceramic copper-clad substrate forming an integral structure.

[0014] Based on a second aspect of this utility model, an intelligent power module is provided, the intelligent power module comprising a substrate structure as described in any one of the above utility model contents.

[0015] Based on a third aspect of this utility model, a controller is also provided, the controller including the intelligent power module as described in the above utility model content.

[0016] Based on a fourth aspect of this utility model, a household appliance is also provided, the household appliance including the controller as described in the above-described utility model content.

[0017] Compared with existing technologies, this utility model includes a ceramic copper-clad substrate and multiple connecting pillars. The ceramic copper-clad substrate has at least two upper core regions. The connecting pillars are fixedly connected to the ceramic copper-clad substrate, and the multiple connecting pillars surround each upper core region. The connecting pillars are electrically connected to the middle region of the bonding wire. Thus, the connecting pillars can serve as intermediate connection points for the bonding wire. When adding new chips, the bonding wire can be bent into multiple segments during the electrical connection process to reduce cross-contact between bonding wires. This also avoids the problem of the bonding wire collapsing and contacting other bonding wires due to excessively long arcs, improving the structural compatibility of the smart power module's substrate structure, reducing production costs during product iteration, and shortening the R&D cycle.

[0018] The above description is merely an overview of the technical solution of this utility model. In order to better understand the technical means of this utility model and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this utility model more obvious and understandable, specific embodiments of this utility model are given below. Attached Figure Description

[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings.

[0020] In the attached diagram:

[0021] Figure 1 This is a schematic diagram of a substrate structure provided in an embodiment of the present utility model;

[0022] Figure 2 This is a schematic diagram of the structure of an intelligent power module provided in an embodiment of the present invention;

[0023] Figure 3 This is a flowchart illustrating the steps of a method for manufacturing a substrate structure according to an embodiment of the present invention.

[0024] Figure 4 This is a schematic diagram of the structure of a ceramic substrate provided in an embodiment of the present invention;

[0025] Figure 5 This is a schematic diagram of the structure of a photocuring machine provided in an embodiment of the present invention;

[0026] Figure 6 This is a schematic diagram of the structure of a mask provided in an embodiment of the present invention;

[0027] Reference numerals: 1. Ceramic copper-clad substrate; 101. Core area; 102. Ceramic substrate; 2. Connecting pillar; 21. Body; 22. Conductive layer; 3. Bonding wire; 4. Driver chip; 5. Power chip; 6. Lead frame; 7. Sample stage; 8. Selective light transmission film platform; 9. Multilayer substrate green body; 10. Mirror; 11. Mask. Detailed Implementation

[0028] Exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0029] An Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It is primarily used to control and drive high-power electronic devices, such as AC motor drivers, frequency converters, and inverters. For example, an IPM module can convert rectified and filtered DC power into adjustable-frequency three-phase power, changing the motor speed by altering the frequency of the output current.

[0030] IPM modules typically require wire bonding for internal electrical interconnection of components. During this process, it's crucial to avoid cross contact and excessively long wire arcs between wires. Cross contact can lead to short circuits and damage the IPM module, while excessively long arcs increase the risk of contact between adjacent wires. To mitigate these issues, current IPM modules generally design their copper-clad ceramic substrates based on the number and structure of driver and power chips. However, adding new driver or power chips necessitates redesigning the IPM module's copper-clad ceramic substrate, increasing production costs and extending the development cycle.

[0031] Based on the aforementioned technical problems, this utility model embodiment is proposed. This utility model embodiment may include a ceramic copper-clad substrate 1 and multiple connecting pillars 2. The ceramic copper-clad substrate 1 has at least two upper core regions 101. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the multiple connecting pillars 2 surround each upper core region 101. The connecting pillars 2 form an electrical connection with the middle region of the bonding wire 3. Thus, the connecting pillars 2 can serve as the intermediate connection points of the bonding wire 3. When adding a new chip, the bonding wire 3 can be bent into multiple segments during the electrical connection process to reduce cross-contact between bonding wires 3, and avoid the problem of the bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. This improves the structural compatibility of the substrate structure of the intelligent power module, reduces the production cost of the intelligent power module during product iteration, and shortens the R&D cycle.

[0032] Reference Figure 1 and Figure 2As shown, this embodiment of the present invention provides a substrate structure, which includes a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2. The ceramic copper-clad substrate 1 has at least two upper core regions 101. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting pillars 2 surround each upper core region 101. The connecting pillars 2 are electrically connected to the middle region of the bonding wire 3.

[0033] In this embodiment of the invention, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2. The ceramic copper-clad substrate 1 can be understood as a substrate structure obtained by metallizing the surface of a ceramic substrate 102. At least two upper core regions 101 are provided on the ceramic copper-clad substrate 1. At least one upper core region 101 is used to mount the driver chip 4 of the intelligent power module, and at least one upper core region 101 is used to mount the power chip 5 of the intelligent power module. The driver chip 4 is used to convert the signals input to the intelligent power module into control signals suitable for the power devices. The power chip 5 is responsible for the power conversion and power output.

[0034] The connecting posts 2 are fixedly connected to the ceramic copper-clad substrate 1, and multiple connecting posts 2 surround each upper core region 101. That is, a large number of connecting posts 2 are arranged around the upper core region 101, so that the connecting posts 2 can serve as intermediate connection points for the bonding wires 3. Therefore, when connecting electrical connection devices in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle region of the bonding wire 3 can form an electrical connection with the connecting posts 2.

[0035] For example, when electrically connecting the driver chip 4QD1 and the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The intermediate node A1 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the driver chip 4QD1, and the intermediate node A2 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the power chip 5GL1.

[0036] For example, when electrically connecting the power chip 5GL1 to the lead frame 6Y1 of the smart power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The intermediate node B1 of the bonding wire 3B can be electrically connected to a connecting post 2 surrounding the driver chip 4QD1, and the intermediate node B2 of the bonding wire 3B can be electrically connected to a connecting post 2 surrounding the lead frame 6Y1.

[0037] Therefore, when adding a new chip, the bonding wire 3 can form multiple bent segments during the electrical connection process to reduce cross-contact between bonding wires 3, and avoid the problem of bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. Here, arc length refers to the total length of the bonding wire 3. If the arc is too long, the bonding wire 3 is more likely to be impacted during the injection molding of the intelligent power module. Under the impact force, the risk of contact between two bonding wires 3 that have collapsed due to excessively long arcs increases.

[0038] When adding a new power chip 5GL2, the corresponding upper core area 101 of the power chip 5GL2 can be determined on the original ceramic copper-clad substrate 1 of the smart power module. Then, the middle area of ​​the bonding wire 3 is used to transition and connect on different connecting pillars 2, avoiding cross contact or excessively long wire arcs of the bonding wire 3 during electrical connection. This utility model improves the structural compatibility of the substrate structure of the smart power module by setting the connecting pillars 2, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle.

[0039] An optional utility model embodiment, referring to... Figure 1 , Figure 2 as well as Figure 4 As shown, multiple connecting pillars 2 are evenly distributed around the same upper core region 101.

[0040] In this embodiment of the present invention, in order to improve the uniformity of the distribution and ease of processing of the connecting pillars 2 forming around the upper core region 101, the spacing between any two adjacent connecting pillars 2 in the plurality of connecting pillars 2 surrounding the same upper core region 101 is the same.

[0041] In some optional utility model embodiments, among the plurality of connecting pillars 2 forming a surrounding area of ​​the same upper core region 101, the distance between two adjacent connecting pillars 2 is set within 0.3 mm to 0.4 mm.

[0042] In this embodiment of the invention, for the plurality of connecting pillars 2 surrounding the same upper core region 101, the distance between two adjacent connecting pillars 2 in each group can be set between 0.3 mm and 0.4 mm. Those skilled in the art can determine the distance between two adjacent connecting pillars 2 according to actual design requirements; for example, the distance can be set to 0.3 mm. Another example is that the distance can be set to 0.35 mm, and yet another example is that the distance can be set to 0.4 mm, etc., without further limitation.

[0043] By defining the distance between two adjacent connecting pillars 2, the processing ease of the connecting pillars 2 can be improved (for example, when the distance is less than 0.3 mm, the corresponding processing difficulty will be further increased). On the other hand, the number of connecting pillars 2 distributed around the upper core region 101 can be increased. With the dense distribution of multiple connecting pillars 2 around the upper core region 101, when a large number of bonding wires 3 are needed to achieve electrical connection between the current chip and other electrical connection devices (such as the chip and the lead frame 6), the arrangement and routing of multiple bonding wires 3 are facilitated. This facilitates the high integration of the intelligent power module and further improves the structural compatibility of the substrate structure.

[0044] An optional utility model embodiment, referring to... Figure 1 , Figure 2 as well as Figure 4 As shown, multiple connecting pillars 2 completely surround the upper core region 101.

[0045] In this embodiment of the invention, to facilitate the electrical connection of the chip in the upper chip region 101 with other electrical connection devices in different directions via the bonding wires 3, a plurality of connecting pillars 2 completely surround the upper chip region 101. That is, the connecting pillars 2 are arrayed on all edges of the upper chip region 101.

[0046] An optional utility model embodiment, referring to... Figure 1 and Figure 2 As shown, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2. The ceramic copper-clad substrate 1 has at least two upper core regions 101. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting pillars 2 surround each upper core region 101. The connecting pillars 2 are electrically connected to the middle region of the bonding wire 3. The height of the connecting pillars 2 extending upwards along the surface of the ceramic copper-clad substrate 1 is set within 0.3 mm to 0.4 mm.

[0047] In this embodiment of the invention, the substrate structure may include a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2. The ceramic copper-clad substrate 1 can be understood as a substrate structure obtained by metallizing the surface of a ceramic substrate 102. At least two upper core regions 101 are provided on the ceramic copper-clad substrate 1. At least one upper core region 101 is used to mount the driver chip 4 of the intelligent power module, and at least one upper core region 101 is used to mount the power chip 5 of the intelligent power module. The driver chip 4 is used to convert the signals input to the intelligent power module into control signals suitable for the power devices. The power chip 5 is responsible for the power conversion and power output.

[0048] The connecting posts 2 are fixedly connected to the ceramic copper-clad substrate 1, and multiple connecting posts 2 surround each upper core region 101. That is, a large number of connecting posts 2 are arranged around the upper core region 101, so that the connecting posts 2 can serve as intermediate connection points for the bonding wires 3. Therefore, when connecting electrical connection devices in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle region of the bonding wire 3 can form an electrical connection with the connecting posts 2.

[0049] The height of the connecting post 2 extending upward along the surface of the ceramic copper-clad substrate 1 is set within 0.3 mm to 0.4 mm. In other words, the height H of the connecting post 2 protruding from the surface of the ceramic copper-clad substrate 1 is within 0.3 mm to 0.4 mm. For example, the height H of the connecting post 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.3 mm. Another example is that the height H of the connecting post 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.35 mm. Yet another example is that the height H of the connecting post 2 extending upward along the surface of the ceramic copper-clad substrate 1 can be set to 0.4 mm; no further limitation is made here. Within the above-mentioned height limit range, the processing convenience of the connecting post 2 can be improved, and this height can be used to adapt to the chip thickness of the upper core region 101, avoiding a significant difference in thickness between the connecting post 2 and the chip, which would reduce the electrical connection stability of the bonding wire 3.

[0050] In some embodiments, when electrically connecting the driver chip 4QD1 and the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The intermediate node A1 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the driver chip 4QD1, and the intermediate node A2 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the power chip 5GL1.

[0051] In other embodiments, when electrically connecting the power chip 5GL1 to the lead frame 6Y1 of the smart power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The intermediate node B1 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the driver chip 4QD1, and the intermediate node B2 of the bonding wire 3B can be electrically connected to one of the connecting pillars 2 surrounding the lead frame 6Y1.

[0052] Therefore, when adding a new chip, the bonding wire 3 can form multiple bent segments during the electrical connection process to reduce cross-contact between bonding wires 3, and avoid the problem of bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. Here, arc length refers to the total length of the bonding wire 3. If the arc is too long, the bonding wire 3 is more likely to be impacted during the injection molding of the intelligent power module. Under the impact force, the risk of contact between two bonding wires 3 that have collapsed due to excessively long arcs increases.

[0053] When adding a new power chip 5GL2, the corresponding upper core area 101 of the power chip 5GL2 can be determined on the original ceramic copper-clad substrate 1 of the smart power module. Then, the middle area of ​​the bonding wire 3 is used to transition and connect on different connecting pillars 2, avoiding cross contact or excessively long wire arcs of the bonding wire 3 during electrical connection. This utility model improves the structural compatibility of the substrate structure of the smart power module by setting the connecting pillars 2, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle.

[0054] An optional utility model embodiment, referring to... Figure 1 and Figure 2 As shown, the connecting column 2 also includes a body 21 and a conductive layer 22. The conductive layer 22 covers the outer surface of the body 21, and the bonding wire 3 is bonded to the conductive layer 22.

[0055] In this embodiment of the invention, the connecting post 2 may further include a body 21 and a conductive layer 22. The body 21 may be fixed to the ceramic copper-clad substrate 1, and the conductive layer 22 may cover the outer surface of the body 21. Thus, the bonding wire 3 can be electrically connected to the conductive layer 22 on the top of the body 21 via wire bonding. Furthermore, the conductive layer 22 has a certain gap from the ceramic insulating substrate, forming electrical insulation through the body 21. In some embodiments, the bonding wire 3 may be a copper wire, and correspondingly, the conductive layer 22 may be a copper layer.

[0056] In some embodiments, the conductive layer 22 may be formed on the outer surface of the body 21 by an electroplating copper process.

[0057] An optional utility model embodiment, referring to... Figure 4 As shown, the body 21 and the ceramic copper-clad substrate 1 are an integral structure.

[0058] In this embodiment of the invention, to improve the ease of processing the substrate structure and reduce production costs, the body 21 and the ceramic copper-clad substrate 1 can be an integral structure, that is, the body 21 and the ceramic copper-clad substrate 1 are processed using an integral molding process. For example, the body 21 can be made of one of the following materials: alumina and silicon oxide.

[0059] In one optional embodiment of the utility model, the cross-sectional shape of the connecting column 2 includes one of the following: rectangular and circular.

[0060] In this embodiment of the invention, the cross-sectional shape of the connecting column 2 is circular, meaning that the connecting column 2 can be a cylindrical structure. In another example, the cross-sectional shape of the connecting column 2 can be rectangular, meaning that the connecting column 2 can be a cuboid or a cube structure. The regularly shaped connecting column 2 facilitates the processing of the substrate structure and makes it easier to control the spacing between two adjacent connecting columns 2.

[0061] As a preferred embodiment, the connecting column 2 can be a cube structure. For example, the connecting column 2 extends upward along the surface of the ceramic copper-clad substrate 1 to a height of 0.3 mm, and the cross-sectional shape of the connecting column 2 can be a square with a side length of 0.3 mm.

[0062] In summary, this utility model discloses a substrate structure, which may include a ceramic copper-clad substrate 1 and a plurality of connecting pillars 2. The ceramic copper-clad substrate 1 has at least two upper core regions 101. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the plurality of connecting pillars 2 surround each upper core region 101. The connecting pillars 2 form an electrical connection with the middle region of the bonding wire 3. Thus, the connecting pillars 2 can serve as the middle connection points of the bonding wire 3. When adding a new chip, the bonding wire 3 can be bent into multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. This improves the structural compatibility of the substrate structure of the smart power module, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle.

[0063] Reference Figure 2 As shown in the figure, this utility model embodiment also discloses an intelligent power module, which may include the substrate structure described in any of the above utility model embodiments.

[0064] In this embodiment of the invention, the intelligent power module may further include a driver chip 4, a power chip 5, bonding wires 3, and a lead frame 6, wherein the driver chip 4 and the power chip 5 can be installed in the upper core region 101. In some embodiments, the driver chip 4 and the power chip 5 can be fixed in the upper core region 101 by welding or bonding. Bonding wires 3 can be used to form bonding connections between the driver chip 4 and the power chip 5, between the driver chip 4 and the lead frame 6, and between the power chip 5 and the lead frame 6. During the bonding process, the middle region of the bonding wire 3 can be electrically connected to the corresponding connecting post 2, which serves to form the bending path of the bonding wire 3 or to reduce the risk of wire collapse caused by excessively long arcs of the bonding wire 3.

[0065] After completing the electrical connections of all smart power modules, the smart power module may further include a molding compound, which can be obtained by injection molding the electrical connection devices using a molding compound. The molding compound may include epoxy resin materials, etc. Thus, after the molding compound is injection molded and cured, a molding compound is formed covering the top of the ceramic substrate 102. This molding compound encapsulates the lead frame 6, power chip 5, driver chip 4, connecting pillar 2, and bonding wire 3, achieving electrical insulation of the smart power module, thereby obtaining the manufactured smart power module.

[0066] This utility model embodiment also discloses a controller, which includes the intelligent power module as described in the above utility model embodiment.

[0067] This utility model embodiment also discloses a household appliance, which includes a controller as described in the above utility model embodiment.

[0068] In this embodiment of the utility model, the household appliances may include, but are not limited to, air conditioners, air purifiers, washing machines, refrigerators, fans, and vacuum cleaners.

[0069] In summary, this utility model discloses a substrate structure, a smart power module, a controller, and a home appliance. This utility model embodiment may include a ceramic copper-clad substrate 1 and multiple connecting pillars 2. The ceramic copper-clad substrate 1 has at least two upper core regions 101. The connecting pillars 2 are fixedly connected to the ceramic copper-clad substrate 1, and the multiple connecting pillars 2 surround each upper core region 101. The connecting pillars 2 form an electrical connection with the middle region of the bonding wires 3. Thus, the connecting pillars 2 can serve as the intermediate connection points of the bonding wires 3. When adding new chips, the bonding wires 3 can be bent into multiple segments during the electrical connection process to reduce cross-contact between bonding wires 3, and avoid the problem of bonding wires 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. This improves the structural compatibility of the smart power module substrate structure, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle.

[0070] Reference Figure 3 As shown in the figure, this utility model embodiment also discloses a method for manufacturing a substrate structure, the substrate manufacturing method including:

[0071] S301. Provide a ceramic slurry, coat the ceramic slurry onto a selectively transparent film platform, and press down the sample stage to expose the ceramic slurry so that the cured ceramic slurry adheres to the sample stage to obtain a substrate green layer.

[0072] In this embodiment of the invention, the ceramic slurry refers to a mixed slurry comprising at least ceramic powder, anhydrous ethanol, and photosensitive resin. For example, the anhydrous ethanol, alumina ceramic powder, and photosensitive resin can be mixed in a certain proportion to obtain the ceramic slurry. The photosensitive resin is mainly used to cure the ceramic slurry in a subsequent photocuring process. The anhydrous ethanol serves as a dispersion medium, allowing for thorough mixing of the alumina ceramic powder and photosensitive resin during the mixing process to obtain the ceramic slurry. The alumina content in the alumina ceramic powder is 99.99% or higher.

[0073] In some alternative embodiments, the anhydrous ethanol, silica ceramic powder, and photosensitive resin can be mixed in a certain proportion to obtain the ceramic slurry. The photosensitive resin is mainly used to cure the ceramic slurry in the subsequent photocuring process. The anhydrous ethanol serves as a dispersion medium, allowing for thorough mixing of the silica ceramic powder and photosensitive resin during the mixing process to obtain the ceramic slurry. The silica ceramic powder contains 99.99% or more silica.

[0074] In some alternative embodiments, to reduce the sintering problems of the subsequent multilayer substrate green body 9, the ceramic slurry may also include sintering aids, etc., thereby ensuring that the thermal conductivity of the final copper-clad ceramic substrate 102 is not less than 25 W / (m·K).

[0075] S302. The ceramic slurry is repeatedly coated onto the selective light-transmitting film platform, and the sample stage is pressed down to expose the ceramic slurry after each coating, so that the cured ceramic slurry adheres to the cured substrate green body on the sample stage to obtain a multilayer substrate green body. The multilayer substrate green body has at least two upper core regions 101, and multiple connecting pillars 2 extend from the multilayer substrate green body, the multiple connecting pillars 2 surrounding each upper core region 101.

[0076] In this embodiment of the utility model, reference is made to Figure 5 As shown, the photopolymerization molding machine may include a selectively transparent film platform 8, an ultraviolet lamp, a reflector 10, and a sample stage 7. The selectively transparent film platform 8 refers to a worktable equipped with a selectively transparent film, which can utilize selective area light transmission technology. The ultraviolet lamp emits a light source, which is reflected by the reflector 10 and projected vertically onto the selectively transparent film platform 8, causing the photosensitive resin to react with the ultraviolet light and curing the ceramic slurry on the selectively transparent film platform 8.

[0077] The sample stage 7 is pressed down to contact the ceramic slurry, thereby allowing the cured ceramic slurry to adhere to the sample stage 7 during exposure (light source irradiation), resulting in a substrate green layer. This substrate green layer can be raised along with the sample stage 7. During the manufacturing of the next substrate green layer, the ceramic slurry is repeatedly coated onto the selectively transparent film platform 8. After each coating of ceramic slurry, the sample stage 7 is repeatedly pressed down to expose the ceramic slurry, allowing the cured ceramic slurry to adhere to the substrate green layer 9, or two substrate green layers, or multiple substrate green layers on the sample stage 7. After curing, a multi-layer substrate green layer 9 is obtained.

[0078] Before manufacturing the copper-clad ceramic substrate 102, the three-dimensional model of the copper-clad ceramic substrate 102 can be sliced, that is, divided into multiple layers in the thickness direction, to obtain a photocurable model. The photocurable model is then imported into a photocurable molding machine. The preset exposure intensity and preset exposure time for each layer of the substrate green can be preset, and the substrate is cured layer by layer according to the preset exposure intensity and preset exposure time. The preset exposure intensity refers to the operating power of the ultraviolet lamp. The preset exposure time refers to the duration for which the ultraviolet lamp emits light. For example, the preset exposure intensity can be between 5 mW / cm³ and 6 mW / cm³, the preset exposure time can be between 1.5 microseconds and 3 microseconds, and the curing time after exposure stops can be between 2 microseconds and 3 microseconds.

[0079] After obtaining the multilayer substrate green body, at least two upper core regions 101 are provided on the current multilayer substrate green body, and multiple connecting pillars 2 extend from the multilayer substrate green body, with the multiple connecting pillars 2 surrounding each upper core region 101. At least one upper core region 101 is used to mount the driver chip 4 of the intelligent power module, and at least one upper core region 101 is used to mount the power chip 5 of the intelligent power module. The driver chip 4 is used to convert the signals input to the intelligent power module into control signals suitable for the power device. The power chip 5 is used to be responsible for the power conversion and power output.

[0080] The connecting posts 2 are fixedly connected to the ceramic copper-clad substrate 1, and multiple connecting posts 2 surround each upper core region 101. That is, a large number of connecting posts 2 are arranged around the upper core region 101, so that the connecting posts 2 can serve as intermediate connection points for the bonding wires 3. Therefore, when connecting electrical connection devices in the intelligent power module, one end of the bonding wire 3 can be connected to the chip, and the middle region of the bonding wire 3 can form an electrical connection with the connecting posts 2.

[0081] For example, when electrically connecting the driver chip 4QD1 and the power chip 5GL1, one end of the bonding wire 3A can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3A can be electrically connected to the power chip 5GL1. The intermediate node A1 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the driver chip 4QD1, and the intermediate node A2 of the bonding wire 3A can be electrically connected to one of the connecting posts 2 surrounding the power chip 5GL1.

[0082] For example, when electrically connecting the power chip 5GL1 to the lead frame 6Y1 of the smart power module, one end of the bonding wire 3B can be electrically connected to the driver chip 4QD1, and the other end of the bonding wire 3B can be electrically connected to the lead frame 6Y1. The intermediate node B1 of the bonding wire 3B can be electrically connected to a connecting post 2 surrounding the driver chip 4QD1, and the intermediate node B2 of the bonding wire 3B can be electrically connected to a connecting post 2 surrounding the lead frame 6Y1.

[0083] Therefore, when adding a new chip, the bonding wire 3 can form multiple bent segments during the electrical connection process to reduce cross-contact between bonding wires 3, and avoid the problem of bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. Here, arc length refers to the total length of the bonding wire 3. If the arc is too long, the bonding wire 3 is more likely to be impacted during the injection molding of the intelligent power module. Under the impact force, the risk of contact between two bonding wires 3 that have collapsed due to excessively long arcs increases.

[0084] When adding a new power chip 5GL2, the corresponding upper core area 101 of the power chip 5GL2 can be determined on the original ceramic copper-clad substrate 1 of the smart power module. Then, the middle area of ​​the bonding wire 3 is used to transition and connect on different connecting pillars 2, avoiding cross contact or excessively long wire arcs of the bonding wire 3 during electrical connection. This utility model improves the structural compatibility of the substrate structure of the smart power module by setting the connecting pillars 2, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle.

[0085] Furthermore, considering the small gap between two adjacent connecting pillars 2 and the high brittleness of the substrate material, traditional turning processes can easily lead to breakage of the connecting pillars 2 during processing. Therefore, by using additive manufacturing to integrally form the connecting pillars 2 with the ceramic substrate 102 of the ceramic copper-clad substrate 1, the processing convenience and structural robustness of the connecting pillars 2 can be improved, and the processing defect rate of the connecting pillars 2 can be greatly reduced.

[0086] S303. The multilayer substrate green is calcined and the calcined multilayer substrate green is sintered to obtain ceramic substrate 102.

[0087] In this embodiment of the present invention, after obtaining a complete multilayer substrate green 9 corresponding to the ceramic substrate 102, the multilayer substrate green 9 is calcined, and the calcined multilayer substrate green 9 is sintered to obtain the ceramic substrate 102. (Refer to...) Figure 4 As shown.

[0088] In some optional embodiments, the multilayer substrate green 9 can be placed in a vacuum degreasing furnace for low-temperature calcination. First, the multilayer substrate green 9 is heated to a first temperature range at a first heating rate and held at that temperature for a first duration. Then, the multilayer substrate green 9, after being held at that temperature for the first duration, is heated to a second temperature range at the first heating rate and held at that temperature for a second duration. Next, the multilayer substrate green 9, after being held at that temperature for the second duration, is heated to a third temperature range at the first heating rate and held at that temperature for a third duration. Finally, the multilayer substrate green 9, after being held at that temperature for the third duration, is cooled back to the second temperature range at a first cooling rate.

[0089] The first heating rate refers to the preset heating rate for raising the temperature of the multilayer substrate green 9 during the low-temperature calcination process. For example, the first heating rate can be 1 degree Celsius per minute, meaning that the temperature of the multilayer substrate green 9 increases by 1 degree Celsius per minute. The first cooling rate refers to the preset cooling rate for lowering the temperature of the multilayer substrate green 9 during the low-temperature calcination process. For example, the first cooling rate can be 5 degrees Celsius per minute, meaning that the temperature of the multilayer substrate green 9 decreases by 5 degrees Celsius per minute. When a higher calcination temperature is desired, the heating stage can be divided into multiple stages, and a holding stage for the multilayer substrate green 9 can be added between two adjacent heating stages.

[0090] In some embodiments, the first temperature range can be 120-150 degrees Celsius; the second temperature range can be 300-350 degrees Celsius; and the third temperature range can be 600-650 degrees Celsius. The first duration can be between 1-2 hours, the second duration can be between 1-2 hours, and the third duration can be between 10-15 hours. Those skilled in the art can select the above parameter values ​​based on actual test results, and no further limitations are made here. After cooling to the second temperature range, the substrate can be cooled to room temperature along with the furnace before high-temperature sintering of the multilayer substrate green 9 is performed.

[0091] First, the calcined multilayer substrate green 9 is heated to the fourth temperature range at the second heating rate. Then, the multilayer substrate green 9, heated to the fourth temperature range, is further heated to the fifth temperature range at the third heating rate and held at that temperature for the fourth duration. Finally, the multilayer substrate green 9, after being held at that temperature for the fourth duration, is cooled back to the fourth temperature range at the second cooling rate.

[0092] In this embodiment of the invention, a multilayer substrate green blank 9 can be placed in a muffle furnace for high-temperature sintering. Both the second and third heating rates can be understood as preset heating rates for raising the temperature of the multilayer substrate green blank 9 during the high-temperature sintering process. For example, the second heating rate could be 10 degrees Celsius per minute, meaning the temperature of the multilayer substrate green blank 9 increases by 10 degrees Celsius per minute. As another example, the third heating rate could be 5 degrees Celsius per minute, meaning the temperature of the multilayer substrate green blank 9 increases by 5 degrees Celsius per minute.

[0093] The second cooling rate refers to the preset cooling rate for cooling the multilayer substrate green 9 during the high-temperature sintering process. For example, the second cooling rate can be 5 degrees Celsius per minute, that is, the temperature of the multilayer substrate green 9 decreases by 5 degrees Celsius per minute. When the desired sintering temperature is high, the heating stage can be divided into multiple stages, and a holding stage of the multilayer substrate green 9 can be added between two adjacent heating stages.

[0094] In some embodiments, the fourth temperature range can be 800-850 degrees Celsius; the fifth temperature range can be 1400-1550 degrees Celsius; and the fourth duration can be between 2 and 4 hours. Those skilled in the art can select the above parameter values ​​based on actual test results, and no further limitations are imposed here. After cooling to the fourth temperature range, the ceramic substrate 1021 can be cooled to room temperature along with the furnace, thereby obtaining the manufactured ceramic substrate 1021.

[0095] S304. Copper plating is applied to the ceramic substrate 102 to obtain a substrate structure.

[0096] In this embodiment of the invention, a pre-set mask 11 can be applied to the surface of the ceramic substrate 102 using vacuum sputtering technology, as shown in the reference. Figure 6 As shown, a metal layer, such as copper or molybdenum, is deposited on the surface area of ​​the ceramic substrate 102 not covered by the mask plate 11. Then, copper is electroplated on the surface of this metal layer to obtain the substrate structure, which is a copper-clad ceramic substrate 102 and a connecting pillar 2 with a conductive layer 22 at the top.

[0097] In summary, this utility model discloses a method for manufacturing a substrate structure. The method may include first providing a ceramic slurry, coating the ceramic slurry onto a selectively transparent film platform, and then pressing down on a sample stage to expose the ceramic slurry, causing the cured ceramic slurry to adhere to the sample stage, thus obtaining a substrate green layer. Then, the ceramic slurry is repeatedly coated onto the selectively transparent film platform, and after each coating, the sample stage is pressed down to expose the ceramic slurry, causing the cured ceramic slurry to adhere to the cured substrate green layer on the sample stage, thus obtaining a multilayer substrate green layer. Finally, the multilayer substrate green layer is calcined and sintered to obtain a ceramic substrate 102. Copper plating is then applied to the ceramic substrate 102 to obtain the substrate structure.

[0098] Therefore, the connecting pillar 2 of the substrate structure obtained by the above manufacturing method can serve as the intermediate connection point of the bonding wire 3. In the case of adding chips, the bonding wire 3 can be bent into multiple segments during the electrical connection process to reduce the cross contact between the bonding wires 3, and avoid the problem of the bonding wire 3 collapsing and contacting other bonding wires 3 due to excessively long arcs. This improves the structural compatibility of the substrate structure of the smart power module, reduces the production cost of the smart power module during product iteration, and shortens the R&D cycle. Furthermore, considering that the interval between two adjacent connecting pillars 2 is small and the substrate material is brittle, traditional turning processes are prone to causing the connecting pillar 2 to break during processing. Therefore, the connecting pillar 2 and the ceramic substrate 102 of the ceramic copper-clad substrate 1 are integrally formed through additive manufacturing, which can improve the processing convenience and structural robustness of the connecting pillar 2, and greatly reduce the processing defect rate of the connecting pillar 2.

[0099] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0100] It will be readily apparent to those skilled in the art that any combination of the above embodiments is feasible. Therefore, any combination of the above embodiments is an implementation scheme of this utility model. However, due to space limitations, this specification will not describe them in detail here.

[0101] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of the present invention may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0102] Similarly, it should be understood that, in order to simplify the present invention and aid in understanding one or more of the various aspects of the invention, in the description of exemplary embodiments of the present invention above, various features of the present invention are sometimes grouped together in a single embodiment, figure, or description thereof.

[0103] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this invention and form different embodiments. For example, in the claims, any of the claimed embodiments can be used in any combination.

Claims

1. A substrate structure, characterized in that, The substrate structure includes: A ceramic copper-clad substrate (1) having at least two upper core regions (101) thereon; Multiple connecting pillars (2) are fixedly connected to the ceramic copper-clad substrate (1), and the multiple connecting pillars (2) surround each of the upper core area (101). The connecting pillars (2) are electrically connected to the middle area of ​​the bonding wire (3).

2. The substrate structure according to claim 1, characterized in that, Multiple connecting pillars (2) are formed around the same upper core region (101) and are distributed at equal intervals.

3. The substrate structure according to claim 2, characterized in that, In the plurality of connecting pillars (2) that surround the same upper core region (101), the distance between two adjacent connecting pillars (2) is set within 0.3 mm to 0.4 mm.

4. The substrate structure according to claim 3, characterized in that, Multiple connecting columns (2) completely surround the upper core region (101).

5. The substrate structure according to claim 1, characterized in that, The height of the connecting column (2) extending upward along the surface of the ceramic copper-clad substrate (1) is set within 0.3 mm to 0.4 mm.

6. The substrate structure according to claim 1, characterized in that, The connecting column (2) also includes a body (21) and a conductive layer (22). The conductive layer (22) covers the outer surface of the body (21), and the bonding wire (3) is bonded to the conductive layer (22).

7. The substrate structure according to claim 6, characterized in that, The body (21) and the ceramic copper-clad substrate (1) are an integral structure.

8. A smart power module, characterized in that, The intelligent power module includes the substrate structure as described in any one of claims 1-7.

9. A controller, characterized in that, The controller includes the intelligent power module as described in claim 8.

10. A household appliance, characterized in that, The household appliance includes the controller as described in claim 9.

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