Wafer processing equipment

Abstract

The utility model discloses wafer processing equipment. The wafer processing apparatus includes a processing chamber, a wafer support heating unit, a shower head, a first top gas source, a second top gas source, a first side gas source, and a second side gas source. The processing cavity is an accommodating space used for processing wafers. The wafer supporting and heating unit is arranged in the processing cavity and used for bearing a wafer. And the spraying head is arranged at the top of the processing cavity corresponding to the wafer supporting and heating unit. The first top gas source is connected above the processing chamber through a first top supply pipe. The second top gas source is connected above the processing chamber through a second top supply pipe. The first side gas source is connected to a side wall of the processing chamber through a first side supply tube. A second side gas source is connected to the side wall of the processing chamber through a second side supply tube. According to the wafer processing equipment provided by the utility model, the gas in the processing cavity can be uniformly distributed, so that the film forming uniformity is improved.

Description

Technical Field

[0001] This utility model relates to a wafer processing device, and more particularly to a wafer deposition device. Background Technology

[0002] In wafer processing, etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulse deposition layer (PDL), plasma-enhanced pulse deposition layer (PEPDL), and photoresist removal are commonly used to process wafers.

[0003] For example, plasma-enhanced atomic layer deposition (PEALD) involves injecting various excited precursors into a processing chamber containing a wafer to form a film on the wafer. In existing technologies, a heating platform supporting the wafer heats the source material, creating a hot zone near the heating platform and a cold zone near the spray head platform. Consequently, when the precursor enters the chamber, it easily diffuses from the hot zone to the cold zone, resulting in unsatisfactory wafer reaction uniformity on the platform.

[0004] Therefore, how to improve the uniformity of film formation by modifying the structural design to avoid uneven gas distribution in the processing chamber and thus overcome the above-mentioned defects has become one of the important issues that this project aims to solve. Utility Model Content

[0005] The technical problem to be solved by this utility model is to provide a wafer processing device that addresses the shortcomings of existing technologies. The device includes: a processing chamber serving as a accommodating space for processing a wafer; a wafer support heating unit disposed within the processing chamber to support the wafer; a spray head disposed at the top of the processing chamber corresponding to the wafer support heating unit; a first top gas source connected to the top of the processing chamber via a first top supply pipe, the first top supply pipe being equipped with a first top supply valve; and a second top gas source connected to the processing chamber via a second top supply pipe. Above, a second top supply pipe is provided with a second top supply valve; a first side gas source is connected to the side wall of the processing chamber through a first side supply pipe, the first side supply pipe being provided with a first side supply valve; and a second side gas source is connected to the side wall of the processing chamber through a second side supply pipe, the second side supply pipe being provided with a second side supply valve; wherein, the first top gas source and the second side gas source simultaneously supply gas to the processing chamber, and the first top gas source and the second top gas source do not simultaneously supply gas to the processing chamber.

[0006] Furthermore, the first top gas source and the first side gas source supply a carrier gas, and the second top gas source and the second side gas source supply a precursor.

[0007] Furthermore, the carrier gas is argon, helium, or nitrogen, or a mixture thereof, and the precursor is bis(diethylamino)silane (Si[N(C2H5)2]2H2, BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, BTBAS), tris(dimethylamino)silane (Si[N(CH3)2]3H, 3DMAS) or trimethylsilane (SiC3H 10 , TMS) and its mixtures.

[0008] Furthermore, the amount of the carrying gas is from 10 sccm to 100 sccm.

[0009] Furthermore, the second top gas source and the first side gas source simultaneously supply gas to the processing chamber, while the first side gas source and the second side gas source do not simultaneously supply gas to the processing chamber.

[0010] Furthermore, the wafer processing equipment further includes a gas extraction device disposed on the other side wall of the processing chamber relative to the first side gas source and the second side gas source.

[0011] Furthermore, the air extraction device is indirectly connected to the processing chamber through a low-pressure chamber, the pressure of which is less than the pressure of the processing chamber.

[0012] Furthermore, the temperature of the processing chamber is between 80°C and 350°C.

[0013] Furthermore, the processing pressure in the processing chamber is from 0.1 torr to 10 torr.

[0014] Furthermore, the wafer processing equipment further includes a first top heater thermally coupled to the first top gas source, a second top heater thermally coupled to the second top gas source, a first side heater thermally coupled to the first side gas source, and a second side heater thermally coupled to the second side gas source.

[0015] To further understand the features and technical content of this utility model, please refer to the following detailed description and drawings of this utility model. However, the drawings provided are for reference and illustration only and are not intended to limit this utility model. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the wafer processing equipment according to the first embodiment of the present invention.

[0017] Figure 2 This is a schematic diagram of a wafer processing apparatus according to a second embodiment of the present invention.

[0018] Figure 3 This is a schematic diagram of a wafer processing device according to the third embodiment of the present invention.

[0019] Figure 4 This is a flowchart of the wafer processing method of this utility model.

[0020] Reference numerals: A1, A2, A3: Wafer processing equipment; D1: First direction; D2: Second direction; W: Wafer; S10~S50: Steps; 10: Processing chamber; 20: Wafer support heating unit; 30: Spray head; 40: Top gas source; 401: First top gas source; 4011: First top supply pipe; 4012: First top supply valve; 4013: First top heater; 402: Second top gas source; 402 1: Second top supply pipe; 4022: Second top supply valve; 50: Side gas source; 501: First side gas source; 5011: First side supply pipe; 5012: First side supply valve; 5013: First side heater; 502: Second side gas source; 5021: Second side supply pipe; 5022: Second side supply valve; 5023: Second side heater; 60: Air extraction device; 61: Low-pressure chamber; 62: Valve. Detailed Implementation

[0021] The following specific embodiments illustrate the implementation of the "wafer processing equipment" disclosed in this utility model. Those skilled in the art can understand the advantages and effects of this utility model from the content disclosed in this specification. This utility model can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this utility model. Furthermore, the accompanying drawings of this utility model are for simple illustrative purposes only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this utility model in detail, but the disclosed content is not intended to limit the scope of protection of this utility model.

[0022] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.

[0023] First Embodiment

[0024] See Figure 1 As shown, the first embodiment of this utility model provides a wafer processing apparatus A1, which includes: a processing chamber 10, a wafer support heating unit 20, a spray head 30, a top gas source 40, a side gas source 50, and a vacuum device 60. The processing chamber 10 can be a space for accommodating wafers W, and the wafer support heating unit 20 can be disposed in the processing chamber 10 to support the wafers W. The spray head 30 can be disposed at the top of the processing chamber 10 corresponding to the wafer support heating unit 20, that is, above the wafer support heating unit 20. The top gas source 40 can be connected to the top of the processing chamber 10, and the side gas source 50 can be connected to one side wall of the processing chamber 10. The vacuum device 60 can be disposed on the other side wall of the processing chamber 10 relative to the side gas source 50.

[0025] In one embodiment, wafer W may have blind vias or trenches. Further, wafer W may have a high aspect ratio (AR), for example, an aspect ratio of 10:1, 11:1, 12:1, 13:1, 14:1, or 15:1. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention. The wafer support heating unit 20 may be electrically coupled to a power source (not shown). For example, the power source may be a biasing device, which, under bias, facilitates the attraction of the precursor to wafer W and its placement within the high aspect ratio structure, thereby contributing to improved coating efficiency and uniformity.

[0026] The top gas source 40 may include a first top gas source 401 and a second top gas source 402. The first top gas source 401 and the second top gas source 402 can inject gas evenly into the processing chamber 10 along a first direction D1. The first top gas source 401 is connected to the top of the processing chamber 10 via a first top supply pipe 4011, and a first top supply valve 4012 may be provided on the first top supply pipe 4011 to control the gas supply of the first top gas source 401. The second top gas source 402 is connected to the top of the processing chamber 10 via a second top supply pipe 4021, and a second top supply valve 4022 may be provided on the second top supply pipe 4021 to control the gas supply of the second top gas source 402.

[0027] The side gas source 50 may include a first side gas source 501 and a second side gas source 502. The first side gas source 501 and the second side gas source 502 can inject gas evenly into the processing chamber 10 along a second direction D2 perpendicular to the first direction D1. The first side gas source 501 is connected to the upper part of the processing chamber 10 via a first side supply pipe 5011, and a first side supply valve 5012 may be provided on the first side supply pipe 5011 to control the gas supply of the first side gas source 501. The second side gas source 502 is connected to the upper part of the processing chamber 10 via a second side supply pipe 5021, and a second side supply valve 5022 may be provided on the second side supply pipe 5021 to control the gas supply of the second side gas source 502.

[0028] The first top gas source 401 and the first side gas source 501 can provide a carrier gas to the processing chamber 10. For example, the carrier gas can be argon, helium, or nitrogen, or a mixture thereof. The second top gas source 402 and the second side gas source 502 can provide a precursor to the processing chamber 10. For example, the precursor can be bis(diethylamino)silane (Si[N(C2H5)2]2H2, BDEAS), bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, BTBAS), tris(dimethylamino)silane (Si[N(CH3)2]3H, 3DMAS) or trimethylsilane (SiC3H 10 , TMS) and its mixtures.

[0029] Furthermore, the gases provided by the first top gas source 401 and the second top gas source 402 can be mixed in the space surrounding the processing chamber 10 and the spray head 30 before being supplied to the wafer W.

[0030] In this utility model, see reference Figure 4 As shown, the wafer processing method of this utility model includes at least the following steps: Step S10: Opening the first top supply valve 4012 to supply a first carrier gas to the processing chamber 10, and opening the second side supply valve 5022 to supply a first precursor to the processing chamber; Step S20: Closing the first top supply valve 4012 and the second side supply valve 5022; Step S30: Opening the second top supply valve 4022 to supply a second precursor to the processing chamber 10, and opening the first side supply valve 5012 to supply a second carrier gas to the processing chamber 10; Step S40: Closing the second top supply valve 4022 and the first side supply valve 5012; and Step S50: Repeating steps S10 to S40 a predetermined number of times, and performing evacuation using the evacuation device 60. The evacuation device 60 can generate an evacuation airflow in the second direction D2. When the deposition step is completed, the evacuation device 60 can be opened to remove excess gas from the processing chamber 10.

[0031] As can be seen from the above, when the second top gas source 402 and the first side gas source 501 simultaneously supply gas to the processing chamber 10, the second top gas source 402 injects the precursor from the first direction D1, and the first side gas source 501 injects the carrier gas from the second direction D2. The amount of carrier gas used is approximately 10 sccm to 100 sccm (e.g., any positive integer between 10 torr and 100 torr) to form an air curtain, improving the diffusion of the precursor to the side gas source due to temperature influence. In other words, the second top gas source 402 and the first side gas source 501 simultaneously supply gas to the processing chamber 10, but the first side gas source 501 and the second side gas source 502 do not simultaneously supply gas to the processing chamber 10. It should be noted that sccm (Standard Cubic Centimeter per Minute) is a unit of gas mass flow rate, representing standard milliliters per minute.

[0032] In one embodiment, an ellipsometer is used to measure the film thickness (measuring the film thickness at the top, bottom, left, right, and center). When the carrier gas usage is low, the film thickness on the right side of wafer W is greater than that on the left side, with a film thickness non-uniformity of 4.29%. When the carrier gas usage is high, the film thickness on each side of wafer W is approximately the same, with a film thickness non-uniformity of only 0.23%. It should be noted that although film thickness uniformity increases with increasing carrier gas usage, excessively high usage will increase process costs and have limited effect on improving post-film uniformity. Therefore, the carrier gas usage can optionally be from approximately 10 sccm to 100 sccm. In other words, when the carrier gas usage is below 10 sccm, the film thickness non-uniformity problem cannot be overcome, and when the carrier gas usage is above 100 sccm, it will increase process costs.

[0033] Similarly, when the first top gas source 401 and the second side gas source 502 simultaneously supply gas to the processing chamber 10, the second side gas source 502 injects the precursor from the second direction D2, and the first top gas source 401 injects the carrier gas from the first direction D1. The amount of carrier gas used is approximately 10 sccm to 100 sccm to form an air curtain, improving the diffusion of the precursor to the spray head 30 due to temperature influence. That is, the first top gas source 401 and the second side gas source 502 can simultaneously supply gas to the processing chamber 10, and the first top gas source 401 and the second top gas source 402 will not simultaneously supply gas to the processing chamber 10. Furthermore, in one embodiment of this invention, the chamber temperature of the processing chamber can be from 80°C to 350°C (e.g., any positive integer between 80°C and 350°C), and the processing pressure of the processing chamber is from 0.1 torr to 10 torr (e.g., any positive integer between 0.1 torr and 10 torr). Optionally, the temperature of the processing chamber can be from 100°C to 300°C, and the processing pressure of the processing chamber can be from 1 torr to 5 torr.

[0034] Second Embodiment

[0035] See Figure 2 As shown, the second embodiment of this utility model provides a wafer processing apparatus A2, which includes: a processing chamber 10, a wafer support heating unit 20, a spray head 30, a top gas source 40, a side gas source 50, and a vacuum device 60. The difference between the wafer processing apparatus A2 of the second embodiment and the wafer processing apparatus A1 of the first embodiment is that the wafer processing apparatus A2 may further include a first top heater 4013 thermally coupled to the first top gas source 401, a second top heater 4023 thermally coupled to the second top gas source 402, a first side heater 5013 thermally coupled to the first side gas source 501, and a second side heater 5023 thermally coupled to the second side gas source 502.

[0036] Furthermore, the heater can provide the energy required for the reaction of the carrier gas or precursor to the gas source. Specifically, the first top heater 4013 can heat the first top gas source 401, the second top heater 4023 can heat the second top gas source 402, the first side heater 5013 can heat the first side gas source 501, and the second side heater 5023 can heat the second side gas source 502.

[0037] Third Embodiment

[0038] See Figure 3As shown, the second embodiment of this utility model provides a wafer processing apparatus A3, which includes: a processing chamber 10, a wafer support heating unit 20, a spray head 30, a top gas source 40, a side gas source 50, and a vacuum device 60. The difference between the wafer processing apparatus A3 of the third embodiment and the wafer processing apparatus A1 of the first embodiment is that the vacuum device 60 of the wafer processing apparatus A3 may further include a low-pressure chamber 61. The low-pressure chamber 61 is disposed between the processing chamber 10 and the vacuum device 60, so that the vacuum device 60 is not directly connected to the processing chamber 10, but is connected to the low-pressure chamber 61 and performs vacuuming on the low-pressure chamber 61.

[0039] Furthermore, the low-pressure chamber 61 can be maintained in a near-vacuum state, meaning the pressure in the low-pressure chamber 61 is lower than the pressure in the processing chamber 10. Therefore, the pressure difference between the processing chamber 10 and the low-pressure chamber 61 can be used to allow gas to flow from the processing chamber 10 to the low-pressure chamber 61. Furthermore, a valve 62 can be installed between the processing chamber 10 and the low-pressure chamber 61 to control the gas flow. Specifically, during the deposition step, valve 62 can be closed to maintain the pressure in the processing chamber 10. After the deposition step is completed, valve 62 can be opened to remove excess gas from the processing chamber 10.

[0040] Furthermore, this invention does not particularly limit the number of the first top gas source 401, the second top gas source 402, the first side gas source 501, and the second side gas source 502. For example, this invention can employ multiple second top gas sources 402 and / or multiple second side gas sources 502 to provide different types of precursors.

[0041] Beneficial effects of the embodiments

[0042] One of the beneficial effects of this utility model is that the wafer processing equipment provided by this utility model can improve the uniformity of film formation by using the technical solution of "a first top gas source, which is connected to the top of the processing cavity through a first top supply pipe, the first top supply pipe being provided with a first top supply valve; a second top gas source, which is connected to the top of the processing cavity through a second top supply pipe, the second top supply pipe being provided with a second top supply valve; a first side gas source, which is connected to the side wall of the processing cavity through a first side supply pipe, the first side supply pipe being provided with a first side supply valve; and a second side gas source, which is connected to the side wall of the processing cavity through a second side supply pipe, the second side supply pipe being provided with a second side supply valve" and "the first top gas source and the second side gas source simultaneously supply gas to the processing cavity, and the first top gas source and the second top gas source do not simultaneously supply gas to the processing cavity", so as to make the gas distribution in the processing cavity uniform.

[0043] Furthermore, the amount of carrier gas used, calculated based on the amount of precursor injected into the processing chamber from the second direction, is approximately 10 to 100 sccm to form a gas curtain. This gas curtain prevents the precursor from diffusing into the spray head during the second-direction injection step, thus preventing poor wafer reaction uniformity. Similarly, during the precursor deposition step where the precursor is injected from the first direction, carrier gas is added in the second direction, also forming a gas curtain. The amount of carrier gas used is approximately 10 to 100 sccm, calculated based on the amount of precursor injected from the first direction. This gas curtain prevents the precursor from diffusing into the side gas source during the first-direction injection step, thus preventing poor wafer reaction uniformity.

[0044] The above-disclosed content is only a preferred and feasible embodiment of the present utility model, and is not intended to limit the scope of protection of the claims of the present utility model. Therefore, all equivalent technical changes made based on the content of the present utility model specification and drawings are included in the scope of protection of the claims of the present utility model.

Claims

1. A wafer processing device, characterized in that, The wafer processing equipment includes: Processing cavity, which is a space for accommodating wafers; A wafer support heating unit is disposed in the processing cavity to support the wafer; A spray head, corresponding to the wafer support heating unit, is disposed at the top of the processing chamber; A first top gas source is connected to the top of the processing chamber via a first top supply pipe, and the first top supply pipe is equipped with a first top supply valve; A second top gas source is connected to the top of the processing chamber via a second top supply pipe, and the second top supply pipe is equipped with a second top supply valve; A first side gas source is connected to the side wall of the processing chamber via a first side supply pipe, and the first side supply pipe is equipped with a first side supply valve; and A second side gas source is connected to the side wall of the processing chamber via a second side supply pipe, and the second side supply pipe is equipped with a second side supply valve. The first top gas source and the second side gas source simultaneously supply gas to the processing chamber, but the first top gas source and the second top gas source do not simultaneously supply gas to the processing chamber.

2. The wafer processing equipment according to claim 1, characterized in that, The first top gas source and the first side gas source supply the carrier gas, and the second top gas source and the second side gas source supply the precursor.

3. The wafer processing equipment according to claim 2, characterized in that, The amount of the carrier gas is from 10 sccm to 100 sccm.

4. The wafer processing equipment according to claim 1, characterized in that, The second top gas source and the first side gas source simultaneously supply gas to the processing chamber, but the first side gas source and the second side gas source do not simultaneously supply gas to the processing chamber.

5. The wafer processing equipment according to claim 1, characterized in that, The wafer processing equipment further includes: an air extraction device disposed on the other side wall of the processing chamber relative to the first side gas source and the second side gas source.

6. The wafer processing equipment according to claim 5, characterized in that, The air extraction device is indirectly connected to the processing chamber through a low-pressure chamber, and the pressure in the low-pressure chamber is lower than the pressure in the processing chamber.

7. The wafer processing equipment according to claim 1, characterized in that, The temperature of the processing chamber is between 80°C and 350°C.

8. The wafer processing equipment according to claim 1, characterized in that, The processing pressure in the processing chamber is 0.1 torr to 10 torr.

9. The wafer processing equipment according to claim 1, characterized in that, The wafer processing equipment further includes a first top heater thermally coupled to the first top gas source, a second top heater thermally coupled to the second top gas source, a first side heater thermally coupled to the first side gas source, and a second side heater thermally coupled to the second side gas source.

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