Wafer electroplating device

Abstract

The wafer electroplating device comprises an electroplating mechanism, a clamping mechanism and a negative pressure mechanism, the electroplating mechanism is provided with an electroplating cavity and a negative pressure cavity which is arranged above the electroplating cavity and communicates with the electroplating cavity, the negative pressure cavity is provided with an opening, the negative pressure mechanism communicates with the negative pressure cavity, and the clamping mechanism is used for fixing a target wafer; the base has a first position and a second position; and when the clamping mechanism is located at the second position, the clamping mechanism immerses the target wafer into the electroplating liquid in the electroplating cavity and closes the opening, and meanwhile, the negative pressure mechanism is used for generating a vacuum environment lower than the atmospheric pressure in the negative pressure cavity when the clamping mechanism closes the opening, so that air in the negative pressure cavity is reduced, and the electroplating efficiency is improved. According to the method, bubbles generated in the process that the wafer is immersed in the electroplating liquid are reduced, meanwhile, the bubbles on the surface of the wafer can be conveniently separated from the surface of the wafer, holes and defects are prevented from being generated on the surface of the wafer in the electroplating process, and then the electroplating effect on the wafer is guaranteed.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer electroplating apparatus. Background Technology

[0002] In the field of semiconductor processing technology, semiconductor electroplating is a process that deposits a metal film on the surface of a wafer using an electroplating device, thereby achieving electrical interconnection between multiple devices on the wafer surface. Electroplating processes are divided into vertical electroplating and horizontal electroplating. Among them, horizontal electroplating equipment has gradually become the mainstream electroplating equipment due to its small required cavity volume, low requirement for electroplating solution, and low manufacturing cost.

[0003] In existing electroplating equipment, during the process of the wafer entering the electroplating solution, in order to prevent air between the wafer surface and the electroplating solution from easily entering the features to be plated on the wafer surface, a tilting mechanism is usually used to tilt the wafer into the electroplating solution at a certain angle to guide the air bubbles to be discharged along the tilted surface of the wafer. However, the above method cannot guarantee that the air bubbles are completely discharged from the wafer surface. Some air bubbles may enter the features to be plated on the wafer surface, resulting in holes and defects, which affects the electroplating effect. Utility Model Content

[0004] The purpose of this application is to provide a wafer electroplating apparatus to solve the technical problem of existing wafer electroplating apparatuses causing holes and defects on the wafer surface during wafer electroplating.

[0005] To achieve the above objectives, the technical solution adopted in this application is: to provide a wafer electroplating apparatus, comprising:

[0006] An electroplating mechanism includes an electroplating chamber and a negative pressure chamber located above and communicating with the electroplating chamber, wherein the negative pressure chamber has an opening;

[0007] A clamping mechanism for fixing a target wafer, having a first position and a second position; when the clamping mechanism is in the first position, the clamping mechanism is separated from the opening; when the clamping mechanism is in the second position, the clamping mechanism immerses the target wafer in the electroplating solution in the electroplating chamber, and the clamping mechanism closes the opening;

[0008] A negative pressure mechanism, connected to the negative pressure chamber, is used to create a vacuum environment in the negative pressure chamber when the clamping mechanism closes the opening.

[0009] Optionally, the negative pressure mechanism includes:

[0010] Negative pressure controller;

[0011] A vacuum generator is connected to the negative pressure chamber and electrically connected to the negative pressure controller.

[0012] When the clamping mechanism is in the first position, the negative pressure controller controls the vacuum generator to stop working;

[0013] When the clamping mechanism is in the second position, the negative pressure controller controls the vacuum generator to start or stop working.

[0014] Optionally, the negative pressure mechanism further includes:

[0015] A pressure sensor is installed inside the negative pressure chamber to detect the pressure value inside the negative pressure chamber and transmit the pressure value to the negative pressure controller. The negative pressure controller compares the pressure value with a preset pressure value set therein.

[0016] When the clamping mechanism is in the second position, if:

[0017] If the pressure value is greater than the preset pressure value, the negative pressure controller controls the vacuum generator to turn on; if:

[0018] If the pressure value is less than or equal to the preset pressure value, the negative pressure controller controls the vacuum generator to stop working.

[0019] Optionally, the clamping mechanism further comprises:

[0020] The third position, along the vertical direction, is located between the first position and the second position;

[0021] When the clamping mechanism is in the third position, the clamping mechanism drives the target wafer to detach from the electroplating solution, and the clamping mechanism closes the opening.

[0022] Optionally, the top of the negative pressure chamber is provided with a vacuum interface, and the vacuum generator is connected to the vacuum interface.

[0023] Optionally, the clamping mechanism includes:

[0024] A clamping element for securing the target wafer and closing the opening when in the second and third positions.

[0025] Optionally, the diameter of the clamping member is equal to the diameter of the opening;

[0026] When the clamping member is in the second and third positions, the outer wall of the clamping member abuts against the inner wall of the opening to close the opening.

[0027] Optionally, the clamping mechanism further includes:

[0028] A rotary motor, connected to the clamping member, is used to drive the clamping member to rotate when the clamping member is in the second position and the third position.

[0029] Optionally, it also includes:

[0030] A driving component, connected to the rotary motor, is used to drive the rotary motor to move the clamping component between the first position, the second position, and the third position.

[0031] Optionally, the electroplating mechanism includes: an electroplating housing, which is provided with the electroplating chamber and the negative pressure chamber;

[0032] An ion exchange membrane is installed inside the electroplating chamber, dividing the electroplating chamber into a cathode chamber and an anode chamber, with the cathode chamber connected to the negative pressure chamber.

[0033] An electroplating anode is installed inside the anode cavity.

[0034] The beneficial effects of the wafer electroplating apparatus provided in this application are as follows: Compared with the prior art, the wafer electroplating apparatus provided in this application includes an electroplating mechanism, a clamping mechanism, and a negative pressure mechanism. The electroplating mechanism is provided with an electroplating chamber and a negative pressure chamber disposed above and communicating with the electroplating chamber. The negative pressure chamber has an opening. The negative pressure mechanism is communicating with the negative pressure chamber. The clamping mechanism is used to fix the target wafer and has a first position and a second position. When the clamping mechanism is in the second position, the clamping mechanism immerses the target wafer in the electroplating solution in the electroplating chamber, and the clamping mechanism closes the opening. At the same time, the negative pressure mechanism is used to create a vacuum environment lower than atmospheric pressure in the negative pressure chamber when the clamping mechanism closes the opening, thereby reducing the air in the negative pressure chamber, so as to reduce the generation of bubbles during the immersion of the wafer in the electroplating solution. It also facilitates the removal of bubbles from the wafer surface, preventing the generation of holes and defects on the wafer surface during the electroplating process, thereby ensuring the electroplating effect on the wafer. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of the clamping mechanism in the first position in an embodiment of this application;

[0037] Figure 2 This is a schematic diagram of the clamping mechanism in the second position in an embodiment of this application;

[0038] Figure 3 This is a schematic diagram of the clamping mechanism in the third position in this embodiment of the application;

[0039] Figure 4 This is a schematic diagram of the electroplating mechanism in the embodiments of this application;

[0040] Figure 5 This is a schematic diagram of the negative pressure mechanism in the embodiments of this application.

[0041] The following are the labeling elements in the figure:

[0042] 10. Electroplating mechanism; 11. Electroplating housing; 111. Electroplating chamber; 112. Negative pressure chamber; 113. Opening; 114. Vacuum interface; 12. Ion exchange membrane; 13. Electroplating anode; 20. Clamping mechanism; 21. Clamping component; 22. Rotary motor; 30. Negative pressure mechanism; 31. Negative pressure controller; 32. Vacuum generator; 33. Pressure sensor; 40. Target wafer; 50. Drive component; 51. Linear module; 511. Guide rail; 512. Slide; 52. Drive rod. Detailed Implementation

[0043] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0044] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0045] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0046] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0047] Please refer to the following: Figures 1 to 5 The wafer electroplating apparatus provided in the embodiments of this application will now be described. A wafer electroplating apparatus includes an electroplating mechanism 10, a clamping mechanism 20, and a negative pressure mechanism 30.

[0048] Please see Figure 1 and Figure 4 The electroplating mechanism 10 includes an electroplating chamber 111 and a negative pressure chamber 112 located above and communicating with the electroplating chamber 111. The negative pressure chamber 112 has an opening 113 located at the top of the negative pressure chamber 112. The electroplating chamber 111 contains an electroplating solution, and the surface of the electroplating solution is spaced apart from the opening 113, thereby forming a negative pressure chamber 112 between the electroplating solution and the opening 113.

[0049] The clamping mechanism 20 is used to fix the target wafer 40, and the target wafer 40 is fixed at the bottom end of the clamping mechanism 20, with the lower end surface of the target wafer 40 being the surface to be electroplated. The clamping mechanism 20 has a first position and a second position.

[0050] Please see Figure 1 When the clamping mechanism 20 is in the first position, the clamping mechanism 20 is separated from the target wafer 40 and the opening 113, and is located outside the opening 113. Preferably, when the clamping mechanism 20 is in the first position, both the clamping mechanism 20 and the target wafer 40 are located directly above the opening 113.

[0051] Please see Figure 2 When the clamping mechanism 20 is in the second position, the clamping mechanism 20 immerses the target wafer 40 into the electroplating solution in the electroplating chamber 111, that is, the target wafer 40 is below the surface of the electroplating solution, so as to facilitate electroplating of the surface to be electroplated. When the clamping mechanism 20 is in the second position, the clamping mechanism 20 closes the opening 113.

[0052] The negative pressure mechanism 30 is connected to the negative pressure chamber 112. When the clamping mechanism 20 moves to the second position, the negative pressure mechanism 30 activates, creating a vacuum environment within the negative pressure chamber 112. At this time, the pressure in the vacuum environment is lower than the atmospheric pressure in the environment where the wafer electroplating apparatus is located. Furthermore, when a vacuum environment is created within the negative pressure chamber 112, the upward force exerted on the electroplating solution within the negative pressure chamber 112 is less than the weight of the electroplating solution, thus preventing the electroplating solution from being drawn out of the electroplating chamber 111 by the negative pressure mechanism 30. Under the negative pressure in the vacuum environment, air bubbles adhering to the surface of the target wafer 40 to be electroplated detach from the surface of the target wafer 40 and re-enter the negative pressure chamber 112.

[0053] Compared with the prior art, the wafer electroplating apparatus provided in this application includes an electroplating mechanism 10, a clamping mechanism 20, and a negative pressure mechanism 30. The electroplating mechanism 10 is provided with an electroplating chamber 111 and a negative pressure chamber 112 disposed above and communicating with the electroplating chamber 111. The negative pressure chamber 112 is provided with an opening 113. The negative pressure mechanism 30 communicates with the negative pressure chamber 112. The clamping mechanism 20 is used to fix the target wafer 40 and has a first position and a second position. When the clamping mechanism 20 is in the second position, the clamping mechanism 20... The target wafer 40 is immersed in the electroplating solution in the electroplating chamber 111, and the clamping mechanism 20 closes the opening 113. At the same time, the negative pressure mechanism 30 is used to create a vacuum environment with a pressure lower than atmospheric pressure in the negative pressure chamber 112 when the clamping mechanism 20 closes the opening 113, thereby reducing the air in the negative pressure chamber and reducing the generation of bubbles during the immersion of the wafer in the electroplating solution. It also facilitates the removal of bubbles from the wafer surface, preventing the formation of holes and defects on the wafer surface during the electroplating process, thereby ensuring the electroplating effect on the wafer.

[0054] In this application, the clamping mechanism 20 is driven by the drive member 50 and driven by the drive member 50 to the first position and the second position. The wafer electroplating apparatus also includes a controller, which is electrically connected to the drive member 50 and the clamping mechanism 20.

[0055] Please see Figure 1 and Figure 2 In one embodiment of this application, the driving component 50 is a linear module 51, which is electrically connected to the controller. The linear module 51 includes a guide rail 511 extending in a vertical direction and a slide block 512 connected to the guide rail 511 and moving in a vertical direction. A driving rod 52 extending in a horizontal direction is connected to the slide block 512. A clamping mechanism 20 is connected to the end of the driving rod 52 away from the slide block 512. The controller is used to control the linear module 51 to drive the driving rod 52 to move the clamping mechanism 20 in a vertical direction between a first position and a second position.

[0056] Please see Figure 5In this application, the negative pressure mechanism 30 includes a negative pressure controller 31 and a vacuum generator 32, wherein the controller is electrically connected to the negative pressure controller 31 and the clamping mechanism 20. The vacuum generator 32 is connected to the negative pressure chamber 112 and is electrically connected to the negative pressure controller 31.

[0057] When the clamping mechanism 20 is in the first position, the negative pressure controller 31 controls the vacuum generator 32 to stop working. When the clamping mechanism 20 is in the second position, the negative pressure controller 31 controls the vacuum generator 32 to start or stop working.

[0058] Specifically, when the clamping mechanism 20 moves to the first position, the controller generates a first control signal and transmits the first control signal to the negative pressure controller 31. The negative pressure controller 31 receives the first control signal and generates a second control signal according to the first control signal, and transmits the second control signal to the vacuum generator 32. The vacuum generator 32 stops working according to the second control signal.

[0059] When the clamping mechanism 20 moves to the second position, the controller generates a third control signal and transmits the third control signal to the negative pressure controller 31. The negative pressure controller 31 receives the third control signal and generates a second control signal or a fourth control signal according to the third control signal, and transmits the second control signal or the fourth control signal to the vacuum generator 32. The vacuum generator 32 stops working according to the second control signal and starts working according to the fourth control signal.

[0060] In one embodiment of this application, please refer again. Figure 5 The negative pressure mechanism 30 also includes a pressure sensor 33. The pressure sensor 33 is electrically connected to the negative pressure controller 31 and is installed inside the negative pressure chamber 112. It is used to detect the pressure value inside the negative pressure chamber 112 and transmit the pressure value to the negative pressure controller 31.

[0061] When the clamping mechanism 20 is in the second position, the clamping mechanism 20 closes the opening 113 to create a sealed space in the negative pressure chamber 112. The negative pressure controller 31 receives the pressure value in the negative pressure chamber 112 detected by the pressure sensor 33 and compares the pressure value with the preset pressure value set therein.

[0062] When the pressure value in the negative pressure chamber 112 is greater than the preset pressure value set in the negative pressure controller 31, the negative pressure controller 31 generates a first judgment signal, and the negative pressure controller 31 generates a fourth control signal according to the first judgment signal, so that the vacuum generator 32 is turned on according to the fourth control signal, thereby forming a vacuum environment in the negative pressure chamber 112.

[0063] When the pressure value in the negative pressure chamber 112 is less than or equal to the preset pressure value set in the negative pressure controller 31, the negative pressure controller 31 generates a second judgment signal, and the negative pressure controller 31 generates a second control signal according to the second judgment signal, and the vacuum generator 32 stops working according to the second control signal.

[0064] In this application, please refer to Figure 3 The clamping mechanism 20 also has a third position. Vertically, the third position is located between the first and second positions. When the clamping mechanism 20 is in the third position, it drives the target wafer 40 out of the electroplating solution, and closes the opening 113.

[0065] In one embodiment of this application, when the clamping mechanism 20 is in the third position, if a negative pressure state needs to be maintained in the negative pressure chamber 112, then when the pressure value in the negative pressure chamber 112 is greater than a preset pressure value set in the negative pressure controller 31, the negative pressure controller 31 generates a first judgment signal, and the negative pressure controller 31 generates a fourth control signal according to the first judgment signal, thereby causing the vacuum generator 32 to start according to the fourth control signal. And when the pressure value in the negative pressure chamber 112 is less than or equal to the preset pressure value set in the negative pressure controller 31, the negative pressure controller 31 generates a second judgment signal, and the negative pressure controller 31 generates a second control signal according to the second judgment signal, and the vacuum generator 32 stops working according to the second control signal.

[0066] In another embodiment of this application, when the clamping mechanism 20 is in the third position, if the negative pressure chamber 112 does not need to maintain a negative pressure state, the controller generates a first control signal and transmits the first control signal to the negative pressure controller 31. The negative pressure controller 31 receives the first control signal and generates a second control signal according to the first control signal, and transmits the second control signal to the vacuum generator 32. The vacuum generator 32 stops working according to the second control signal.

[0067] In one embodiment of this application, a vacuum interface 114 is provided at the top of the negative pressure chamber 112, and the vacuum generator 32 is connected to the vacuum interface 114. By placing the vacuum interface 114 at the top of the negative pressure chamber 112, the vacuum generator 32 is prevented from drawing the electroplating solution out of the electroplating chamber 111 when it is working.

[0068] In this application, please refer to Figures 1 to 3 The clamping mechanism 20 includes a clamping element 21.

[0069] The target wafer 40 is clamped on the clamping member 21, and the clamping member 21 closes the opening 113 when it is in the second and third positions.

[0070] Specifically, the clamping member 21 is connected to the end of the drive rod 52 away from the slide 512, and the clamping is a circular disc structure. The opening 113 is also circular, and the diameter of the clamping member 21 is equal to the diameter of the opening 113. When the clamping member 21 is in the second and third positions, the outer wall of the clamping member 21 abuts against the inner wall of the opening 113 to close the opening 113.

[0071] In another embodiment of this application, please refer to Figures 1 to 3 The clamping mechanism 20 also includes a rotary motor 22, which is electrically connected to the controller. The rotary motor 22 is fixedly connected to the end of the drive rod 52 away from the slide 512. The clamping member 21 is connected to an optional motor shaft for driving the clamping member 21 to rotate when it is in the second and third positions.

[0072] Specifically, when the clamping member 21 is in the first position, the controller also generates a fifth control signal and transmits the fifth control signal to the rotary motor 22, and the rotary motor 22 stops working according to the fifth control signal.

[0073] When the clamping member 21 is in the second and third positions, the controller also generates a sixth control signal and transmits the sixth control signal to the rotary motor 22. The rotary motor 22 starts according to the sixth control signal to drive the clamping member 21 to rotate.

[0074] When the clamping member 21 rotates in the second position, it enables rotational electroplating in the electroplating solution. When the clamping member 21 rotates in the third position, it removes the electroplating solution adhering to the target wafer 40 from the target wafer 40.

[0075] It should be noted that after the clamping member 21 has detached from the electroplating solution in the third position, the clamping member 21 moves to the first position to facilitate the replacement of the next target wafer 40.

[0076] In this application, please refer to Figures 1 to 4 The electroplating mechanism 10 includes an electroplating housing 11, an ion exchange membrane 12, and an electroplating anode 13. The electroplating housing 11 is provided with an electroplating chamber 111 and a negative pressure chamber 112. The ion exchange membrane 12 is installed in the electroplating chamber 111 and divides the electroplating chamber 111 into a cathode chamber and an anode chamber. The cathode chamber is connected to the negative pressure chamber 112. The electroplating anode 13 is installed in the anode chamber.

[0077] The ion exchange membrane 12 is used to allow cations to enter the cathode cavity from the anode cavity, preventing impurities in the anode cavity from contaminating the cathode cavity, thereby ensuring the electroplating yield of the target wafer 40. The cathode cavity is located above the anode cavity, and when the clamping member 21 is in the second position, the target wafer 40 is located in the cathode cavity.

[0078] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A wafer electroplating apparatus, characterized in that, include: An electroplating mechanism includes an electroplating chamber and a negative pressure chamber located above and communicating with the electroplating chamber, wherein the negative pressure chamber has an opening; A clamping mechanism for fixing a target wafer, having a first position and a second position; when the clamping mechanism is in the first position, the clamping mechanism is separated from the opening; when the clamping mechanism is in the second position, the clamping mechanism immerses the target wafer in the electroplating solution in the electroplating chamber, and the clamping mechanism closes the opening; A negative pressure mechanism, connected to the negative pressure chamber, is used to create a vacuum environment in the negative pressure chamber when the clamping mechanism closes the opening.

2. The wafer electroplating apparatus as described in claim 1, characterized in that, The negative pressure mechanism includes: Negative pressure controller; A vacuum generator is connected to the negative pressure chamber and electrically connected to the negative pressure controller. When the clamping mechanism is in the first position, the negative pressure controller controls the vacuum generator to stop working; When the clamping mechanism is in the second position, the negative pressure controller controls the vacuum generator to start or stop working.

3. The wafer electroplating apparatus as described in claim 2, characterized in that, The negative pressure mechanism also includes: A pressure sensor is installed inside the negative pressure chamber to detect the pressure value inside the negative pressure chamber and transmit the pressure value to the negative pressure controller. The negative pressure controller compares the pressure value with a preset pressure value set therein. When the clamping mechanism is in the second position, if: If the pressure value is greater than the preset pressure value, the negative pressure controller controls the vacuum generator to turn on; if: If the pressure value is less than or equal to the preset pressure value, the negative pressure controller controls the vacuum generator to stop working.

4. The wafer electroplating apparatus as described in claim 3, characterized in that, The clamping mechanism also has: The third position, along the vertical direction, is located between the first position and the second position; When the clamping mechanism is in the third position, the clamping mechanism drives the target wafer to detach from the electroplating solution, and the clamping mechanism closes the opening.

5. The wafer electroplating apparatus as described in claim 4, characterized in that, The top of the negative pressure chamber is equipped with a vacuum interface, and the vacuum generator is connected to the vacuum interface.

6. The wafer electroplating apparatus as described in claim 5, characterized in that, The clamping mechanism includes: A clamping element for securing the target wafer and closing the opening when in the second and third positions.

7. The wafer electroplating apparatus as described in claim 6, characterized in that, The diameter of the clamping member is equal to the diameter of the opening; When the clamping member is in the second and third positions, the outer wall of the clamping member abuts against the inner wall of the opening to close the opening.

8. The wafer electroplating apparatus as described in claim 7, characterized in that, The clamping mechanism further includes: A rotary motor, connected to the clamping member, is used to drive the clamping member to rotate when the clamping member is in the second position and the third position.

9. The wafer electroplating apparatus as described in claim 8, characterized in that, Also includes: A driving component, connected to the rotary motor, is used to drive the rotary motor to move the clamping component between the first position, the second position, and the third position.

10. The wafer electroplating apparatus as described in claim 9, characterized in that, The electroplating mechanism includes: an electroplating housing, which is provided with the electroplating chamber and the negative pressure chamber; An ion exchange membrane is installed inside the electroplating chamber, dividing the electroplating chamber into a cathode chamber and an anode chamber, with the cathode chamber connected to the negative pressure chamber. An electroplating anode is installed inside the anode cavity.

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