Wafer boat and semiconductor device

Abstract

The embodiment of the utility model provides a wafer boat and a semiconductor device, a first air injection hole in the wafer boat is located on a support column between at least a part of support legs, and the first air injection hole is arranged towards a wafer, so that the first air injection hole can be arranged towards the wafer in the process of processing the wafer in the wafer boat. Process gas is jetted on the wafer through at least part of the first gas jetting holes between the supporting legs to compensate the condition that the film layer near the supporting columns is too thin or too thick, so that the thickness of the film of the wafer at the supporting columns is easily the same as that of the film at the center of the wafer, and the thickness of the film at the edge of the wafer is easily the same. The difficulty of process control is reduced, and the product yield is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a crystal boat and semiconductor equipment. Background Technology

[0002] In semiconductor manufacturing, thin film deposition technology is one of the key steps in realizing the functions of integrated circuits. The equipment used in this technology is mainly divided into single-wafer chamber machines and batch furnace tube machines. Compared with single-wafer machines, batch furnace tube machines can process multiple wafers simultaneously, significantly improving production efficiency and capacity, and therefore have been widely used in the field of semiconductor thin film deposition.

[0003] In batch furnace tube machines, wafer loading is achieved using a wafer boat. The wafer boat is typically designed with three support pillars to support the wafer. While this improves wafer loading efficiency, it also presents a technical challenge: the support pillar structure may affect the distribution of gas ejected by the gas ejection device within the chamber.

[0004] Therefore, the presence of support pillars in the wafer boat means that the quality of thin film deposition on the wafer needs to be further improved. Utility Model Content

[0005] The problem solved by this utility model embodiment is to provide a crystal boat and semiconductor equipment for improving the quality of thin film deposition on wafers and for improving product yield.

[0006] To address the aforementioned problems, this utility model provides a wafer boat, comprising: multiple support pillars arranged circumferentially; multiple support feet spaced axially on the support pillars, with support feet at the same height on different support pillars used to support the same wafer; and a first air jet hole located on at least a portion of the support feet on the support pillars, the first air jet hole being oriented towards the wafer.

[0007] This utility model embodiment also provides a semiconductor device, including: a process chamber; the aforementioned crystal boat, located in the process chamber; and a gas supply system, located in the process chamber and communicating with the first jet hole, for supplying gas.

[0008] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0009] The first jet hole in the crystal boat provided in this embodiment is located on the support pillar between at least a portion of the support feet, and the first jet hole is configured to face the wafer. Thus, during the process of processing the wafer in the crystal boat, the process gas is injected onto the wafer through the first jet hole between at least a portion of the support feet to compensate for the situation where the film layer near the support pillar is too thin or too thick. This makes it easier for the film thickness at the support pillar to be the same as the film thickness at the center of the wafer, and also makes it easier for the film thickness at the edge of the wafer to be the same, reducing the difficulty of process control and improving product yield.

[0010] The semiconductor device provided in this embodiment includes a process chamber; a crystal boat located in the process chamber; and a gas supply system located in the process chamber and connected to the first jet hole for supplying gas. Because the first jet hole of the crystal boat is located on the support pillar between at least a portion of the support feet, and the first jet hole is oriented towards the wafer, the gas supply system is connected to the first jet hole. During the process processing of the wafer in the crystal boat through the process chamber, the process gas supplied by the gas supply system is delivered to the first jet hole between at least a portion of the support feet and sprayed onto the wafer through the first jet hole. This compensates for situations where the film layer near the support pillar is too thin or too thick, making it easier for the film thickness at the support pillar to be the same as the film thickness at the center of the wafer, and also making it easier for the film thickness at the edge of the wafer to be the same. This reduces the difficulty of process control and helps improve product yield. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the structure of a crystal boat according to an embodiment of the present utility model;

[0012] Figure 2 yes Figure 1 A schematic diagram of the half-section structure of the Zhongjingzhou;

[0013] Figure 3 A schematic diagram of the structure of the second embodiment of the crystal boat of this utility model;

[0014] Figure 4 Schematic diagram of the structure of the crystal boat in three embodiments of this utility model;

[0015] Figure 5 Schematic diagram of the structure of the four embodiments of the present utility model;

[0016] Figure 6 A schematic diagram of the structure of the fifth embodiment of the crystal boat of this utility model;

[0017] Figure 7 A schematic diagram of the structure of the sixth embodiment of the crystal boat of this utility model;

[0018] Figure 8A schematic diagram of the structure of the seventh embodiment of the present utility model;

[0019] Figure 9 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention;

[0020] Figure 10 yes Figure 9 A schematic diagram of a half-section of a semiconductor device;

[0021] Figure 11 This is a schematic diagram of the gas flow from the gas supply system of the semiconductor device to the first jet hole according to an embodiment of the present invention;

[0022] Figure 12 A schematic diagram of the gas flow from the gas supply system of the semiconductor device to the bottom jet unit in this embodiment of the utility model;

[0023] Figure 13 A schematic diagram of the gas flow from the gas supply system of the semiconductor device to the top jet unit according to an embodiment of this utility model;

[0024] Figure 14 This is a schematic diagram of the structure of a second embodiment of the semiconductor device of this utility model. Detailed Implementation

[0025] As the background technology indicates, the presence of support pillars in the wafer boat hinders the improvement of thin film deposition quality on the wafer. Specifically, due to the presence of support pillars, the film deposition thickness near the three support pillars differs from other locations, potentially leading to excessively thin or thick films, which in turn affects electrical performance or causes yield abnormalities. Furthermore, as the film thickness on the support pillars increases over time, there is a risk of film detachment. If detached film falls onto the wafer, it forms particles, resulting in product yield losses. Simultaneously, the uneven distribution of gas at the wafer edge and center also leads to uneven film thickness at the wafer edge, increasing the difficulty of process control.

[0026] To address the aforementioned technical problem, the crystal boat provided in this embodiment of the invention includes: multiple support pillars arranged circumferentially; multiple support legs spaced axially on the support pillars, with support legs at the same height on different support pillars used to support the same wafer; and a first jet hole located on the support pillars between at least a portion of the support legs, and the first jet hole facing the wafer. In the crystal boat provided in this embodiment of the invention, the first jet hole is located on the support pillars between at least a portion of the support legs, and the first jet hole is facing the wafer. Therefore, during the processing of the wafer in the crystal boat, process gas is injected onto the wafer through the first jet hole between at least a portion of the support legs to compensate for situations where the film layer near the support pillars is too thin or too thick. This makes it easier for the film thickness at the support pillars to be the same as the film thickness at the center of the wafer, and also makes it easier for the film thickness at the wafer edges to be the same, reducing the difficulty of process control and improving product yield.

[0027] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] Accordingly, this utility model provides a crystal boat. (Reference) Figure 1 and Figure 2 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of this utility model.

[0029] The wafer boat 100 includes: a plurality of support pillars 101, which are arranged at intervals along the circumference; a plurality of support feet 102, which are spaced at intervals along the axial direction of the support pillars 101, and the support feet 102 at the same height on different support pillars 101 are used to support the same wafer; and a first jet hole 103, which is located on the support pillars 101 between at least a portion of the support feet 102, and the first jet hole 103 is oriented toward the wafer.

[0030] In the crystal boat provided in this embodiment of the present invention, the first jet hole 103 is located on the support pillar 101 between at least a portion of the support feet 102, and the first jet hole 103 is configured to face the wafer. Thus, during the process of processing the wafer in the crystal boat 100, the process gas is sprayed onto the wafer through the first jet hole 103 between at least a portion of the support feet 102 to compensate for the situation where the film layer near the support pillar 101 is too thin or too thick. This makes it easier for the film thickness at the support pillar 101 of the wafer to be the same as the film thickness at the center of the wafer, and also makes it easier for the film thickness at the edge of the wafer to be the same. This reduces the difficulty of process control and is beneficial to improving product yield.

[0031] The crystal boat 100 includes a plurality of support columns 101 arranged at intervals along the circumference.

[0032] The wafer boat 100 forms a stable structure through multiple support pillars 101 arranged at intervals along the circumference, providing a reliable load-bearing and support structure for the wafer.

[0033] In this embodiment, the crystal boat 100, in addition to the support columns 101, also includes: a top plate 104, located at the top of the plurality of support columns 101 and connected to the top of the support columns 101; and a bottom plate 105, located at the bottom of the plurality of support columns 101 and connected to the bottom of the support columns 101.

[0034] The top plate 104 is connected to the top of the multiple support pillars 101, forming a stable upper frame, and the bottom plate 105 is connected to the top of the multiple support pillars 101, forming a stable lower frame. The top plate 104 and the bottom plate 105 provide structural support for the entire wafer boat 100, enabling the wafer to be stably supported and positioned during the semiconductor manufacturing process.

[0035] In this embodiment, the top plate 104 and the bottom plate 105 can be fixedly connected or detachably connected to the support column 101.

[0036] It should be noted that the crystal boat 100 is mounted on the support base 300, specifically, the base plate 105 is fixedly mounted on the support base 300.

[0037] The support column 101 directly provides a bearing position for the support foot 102 and the first jet hole 103.

[0038] like Figure 2 and Figure 5 As shown, the support column 101 includes an axially extending internal channel 106; the first air jet 103 penetrates the side wall of the support column 101 and communicates with the internal channel 106.

[0039] The internal channel 106 provides a passage for gas delivery. The first jet port 103 penetrates the side wall of the support column 101 and communicates with the internal channel 106, so that process gas or cleaning gas can be delivered from the internal channel 106 to the first jet port 103 of the support column 101 (e.g., Figure 5 (As indicated by the middle arrow), the gas ejected from the first jet hole 103 can specifically improve the gas distribution at the support pillar 101, enhance the overall uniformity of gas distribution on the wafer surface, and improve the uniformity of thin film deposition. In addition, the internal channel 106 enables the support pillar 101 to not only provide structural support but also to perform gas transport functions, which helps to improve space utilization efficiency.

[0040] In this embodiment, the internal channel 106 is cylindrical to facilitate gas flow and the fabrication of the support column 101. In other embodiments, the internal channel may also be square.

[0041] In this embodiment, there are three support columns 101, arranged at circumferential intervals, meaning that adjacent support columns 101 are spaced 120° apart. In other embodiments, the number of support columns may be more than three, such as four, five, or six.

[0042] In this embodiment, the support column 101 is made of a high-temperature resistant and corrosion-resistant material, capable of withstanding high temperatures and corrosion from process gases during the process. Specifically, the material of the support column 101 includes quartz rods or ceramics.

[0043] Multiple support feet 102 are spaced apart along the axial direction of the support column 101 on the support column 101, and the support feet 102 at the same height on different support columns 101 are used to support the same wafer.

[0044] Multiple support feet 102 are spaced apart along the axial direction of the support column 101 on the support column 101, serving as the core support structure of the wafer boat 100 and providing direct support for the wafer. Furthermore, support feet 102 at the same height on different support columns 101 are used to support the same wafer, maintaining a high degree of flatness in the wafer and reducing the probability of wafer warping.

[0045] In this embodiment, the support foot 102 is made of a high-temperature resistant and corrosion-resistant material, capable of withstanding high temperatures and corrosion from process gases during the process. Specifically, the material of the support foot 102 includes quartz or ceramic.

[0046] It should be noted that, along the axial direction of the support column 101, the interval L between adjacent support feet 102 (e.g., ...) Figure 2 The spacing L (as shown) is 6mm to 10mm. If the spacing L is too large, the spacing between adjacent wafers will be too large, resulting in fewer wafers that can be placed on the support pillar 101 of the same length, reducing the space utilization of the wafer boat 100. If the spacing L is too small, the spacing between adjacent wafers will be too small, which is not conducive to the flow of gas ejected from the first jet hole 103 between wafers, affecting the uniformity of thin film deposition; moreover, a small spacing will increase the difficulty of cleaning the support pillar 101 and support foot 102, increase the risk of residue accumulation, and easily lead to particulate contamination problems.

[0047] The first jet hole 103 is located on the support post 101 between at least a portion of the support feet 102, and the first jet hole 103 is configured to face the wafer.

[0048] The first jet hole 103 is oriented towards the wafer, which can precisely control the direction of gas injection, effectively solve the problem of uneven gas distribution caused by the support pillar 101, reduce the thickness anomaly near the support pillar 101 and the wafer edge, and thus improve the consistency of thin film deposition.

[0049] In this embodiment, the first jet hole 103 extends horizontally, meaning it is parallel to the wafer surface. This horizontal extension of the first jet hole 103 allows for more uniform gas distribution on the wafer surface, reducing the thickness difference between the wafer at the support pillar 101 and the central region. In other embodiments, the first jet hole can extend obliquely downwards towards the edge of the wafer, specifically reducing film thickness differences near the support pillar and other areas of the wafer, thus improving product yield.

[0050] In this embodiment, along the axial direction of the support column 101, the first jet hole 103 is located at the middle position between two adjacent support feet 102.

[0051] By setting the first jet hole 103 at the middle position between adjacent support feet 102 of the support post 101, it is beneficial to control the gas injection position. While reducing the influence of the support feet 102 on the ejected gas on both sides of the first jet hole 103, it can also effectively compensate for the problem of the film layer being too thin or too thick near the support post 101, improve the inconsistent film thickness between the wafer edge and the center position, and improve the uniformity of thin film deposition.

[0052] In this embodiment, a plurality of first jet holes 103 are provided between adjacent support feet 102, and the plurality of first jet holes 103 are spaced apart along the axial direction of the support column 101. Compared with the case where a single first jet hole 103 is provided between adjacent support feet 102, providing multiple first jet holes 103 between adjacent support feet 102 increases the coverage area of ​​gas injection, which is beneficial to achieving uniform gas distribution and improving the consistency of film thickness and formation quality; the multiple first jet holes 103 are spaced apart along the axial direction of the support column 101, so that gas is ejected from different heights, which is beneficial to forming vortices or airflow cross regions on the wafer surface near the support column 101, and is beneficial to creating a more uniform gas environment between wafers.

[0053] In other embodiments, a plurality of first jet holes are provided between adjacent support feet, and the plurality of first jet holes are spaced apart on the same horizontal plane. Compared with the case where a single first jet hole is provided between adjacent support feet, providing multiple first jet holes between adjacent support feet increases the coverage area of ​​gas injection, which is beneficial to achieving uniform gas distribution and improving the consistency of film thickness and formation quality. The multiple first jet holes are spaced apart along the same horizontal plane, so that the gas is ejected from the same height, which is beneficial to forming a uniform gas distribution at a specific height on the wafer surface near the support pillar, increasing the coverage area of ​​gas injection. This can not only effectively compensate for the problem of the film being too thin or too thick near the support pillar, but also improve the situation of inconsistent film thickness between the wafer edge and the center.

[0054] like Figure 2 As shown, the support column 101 includes a bottom region I, a middle region II, and a top region III distributed along the axial direction. The first air jet 103 is provided between adjacent support feet 102 in one or more of the bottom region I, middle region II, and top region III.

[0055] By utilizing one or more of the bottom region I, middle region II, and top region III, the problem of uneven gas distribution caused by the support pillar 101 can be effectively compensated. In particular, the thickness difference of thin film deposition near the support pillar 101 and in the wafer center region, as well as the thickness difference at the wafer edge, can be reduced, thereby reducing electrical anomalies caused by uneven film thickness and improving product yield.

[0056] like Figure 3 As shown, the first jet hole 103 is provided between adjacent support feet 102 in the bottom region I.

[0057] When the crystal boat is used in a semiconductor device, although a heat shield 400 is provided between the crystal boat 100 and the tray, heat will still flow from the high-temperature region to the low-temperature region. The heat shield 400 cannot completely prevent heat transfer between the crystal boat 100 and the tray structure. Therefore, under actual operating conditions, the temperature of the bottom region I of the crystal boat 100 will be lower than the temperature of the middle region II and the top region III of the crystal boat 100. The lower temperature may lead to a decrease in the reaction rate of the bottom region I, affecting the uniformity of thin film growth, which will result in poor uniformity of the thin film thickness on the bottom wafer. By providing a first jet hole 103 between adjacent support feet 102 in the bottom region I, and by injecting gas from the first jet hole 103, it is helpful to appropriately increase the reactant concentration in the bottom region I, compensate for the decrease in reaction rate that may be caused by the lower temperature, and improve the uniformity of thin film deposition on the bottom wafer.

[0058] Furthermore, the first jet hole 103 is provided between adjacent support feet 102 in the bottom region I of the support pillar 101. During the thin film deposition process, gas (including process gas or inert gas) is sprayed near the support pillar 101 in the bottom region I for precise adjustment, thereby effectively solving the problem of uneven gas distribution caused by the support pillar 101 in the bottom region I blocking the gas jetting device. According to different process requirements, the composition of the gas sprayed near the support pillar 101 can be flexibly adjusted through the first jet hole 103 in the bottom region I, effectively improving the difference between the thin film deposition thickness near the support pillar 101 in the bottom region I and the wafer center region, as well as the thickness difference at the wafer edge, reducing electrical abnormalities caused by uneven thin film thickness, and improving product yield.

[0059] In this embodiment, when the first air jet 103 is provided between adjacent support feet 102 in the bottom region I, the internal channel 106 is only located in the bottom region I of the support column 101. In other embodiments, the internal channel is located in both the bottom and middle regions of the support column, or in the bottom, middle, and top regions simultaneously.

[0060] Or, such as Figure 4 As shown, the first jet hole 103 is provided between adjacent support feet 102 in the central region II.

[0061] When the crystal boat 100 is applied in a semiconductor device, the first jet hole 103 is provided between adjacent support feet 102 in the central region II of the support pillar 101. During the thin film deposition process, gas (including process gas or inert gas) is sprayed near the support pillar 101 in the central region II for precise adjustment, thereby effectively solving the problem of uneven gas distribution caused by the support pillar 101 in the central region II blocking the gas jetting device. According to different process requirements, the composition of the gas sprayed near the support pillar 101 can be flexibly adjusted through the first jet hole 103 in the central region II, effectively improving the difference between the thin film deposition thickness near the support pillar 101 in the central region II and the wafer center area, as well as the thickness difference at the wafer edge, reducing electrical abnormalities caused by uneven thin film thickness, and improving product yield.

[0062] In this embodiment, when the first air jet 103 is provided between adjacent support feet 102 in the middle region II, the internal channel 106 is located only in the bottom region I and the middle region II of the support column 101. In other embodiments, the internal channel may also be located simultaneously in the bottom region, middle region, and top region of the support column.

[0063] Or, such as Figure 5 As shown, the first jet hole 103 is provided between adjacent support feet 102 in the top region III.

[0064] When the crystal boat 100 is applied in a semiconductor device, the first jet hole 103 is provided between adjacent support feet 102 in the top region III of the support pillar 101. During the thin film deposition process, gas (including process gas or inert gas) is sprayed near the support pillar 101 in the top region III for precise adjustment, thereby effectively solving the problem of uneven gas distribution caused by the support pillar 101 in the top region III blocking the gas jetting device. According to different process requirements, the composition of the gas sprayed near the support pillar 101 can be flexibly adjusted through the first jet hole 103 in the top region III, effectively improving the difference between the thin film deposition thickness near the support pillar 101 in the top region III and the wafer center region, as well as the thickness difference at the wafer edge, reducing electrical abnormalities caused by uneven thin film thickness, and improving product yield.

[0065] In this embodiment, when the first jet hole 103 is provided between adjacent support feet 102 in the top region III, the column channel 106 is simultaneously located in the bottom region I, the middle region II and the top region III of the support column 101.

[0066] like Figure 6 As shown, the first jet hole 103 can also be provided between adjacent support feet 102 in the bottom region I and the middle region II. Alternatively, as... Figure 7 As shown, the first jet hole 103 is provided between adjacent support feet 102 in the middle region II and the top region III. Alternatively, as... Figure 8 As shown, the first air jet vent 103 is provided between adjacent support feet 102 in the bottom region I and the top region III. Alternatively, as... Figure 5 As shown, the first jet hole 103 is provided between adjacent support feet 102 in the bottom region I, the middle region II and the top region III.

[0067] It should be noted that the diameter of the first jet hole 103 is between 1 mm and 3 mm. If the diameter of the first jet hole 103 is too large, the corresponding gas flow rate will be too high, which can easily lead to local turbulence and affect the uniformity of thin film deposition. If the diameter of the first jet hole 103 is too small, the corresponding gas flow rate will be too low, which will not effectively reduce the difference in thin film thickness between the support pillar 101 and other areas of the wafer, and will be detrimental to improving product yield.

[0068] As an example, the diameter of the first jet orifice 103 is 2 mm. When the gas flow rate of the first jet orifice 103 is controlled to be less than 0.1 SLM (Standard Liter per Minute), the combined reaction gas has a maximum density of 5 kg / m³. 3The characteristics of this material result in an extremely low Reynolds coefficient (Re = 0.00002 << 1000), ensuring that the gas is in a completely laminar flow state. This laminar flow state not only avoids turbulent disturbances but also ensures that the flow fields between wafers do not interfere with each other, thus providing a stable and reliable basis for precise control of the thin film deposition process. Through this highly controllable airflow distribution, local airflow compensation can be performed on the wafer at the support pillar 101, making it easier for the film thickness at the support pillar 101 to be the same as the film thickness at the center of the wafer, and also making it easier for the film thickness at the edge of the wafer to be the same, reducing the difficulty of process control and improving product yield.

[0069] Accordingly, this utility model provides a semiconductor device. (Reference) Figure 9 and Figure 10 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of this utility model.

[0070] The semiconductor device includes: a process chamber (not shown in the figure); the aforementioned crystal boat 100, located in the process chamber; and a gas supply system 200, located in the process chamber and connected to the first jet orifice 103, for providing process gas during wafer processing.

[0071] In the semiconductor device provided in this embodiment of the present invention, a first jet hole 103 is located on the support pillar 101 between at least a portion of the support feet 102, and the first jet hole 103 is configured to face the wafer. A gas supply system 200 communicates with the first jet hole 103, thereby, during the process of processing the wafer in the wafer boat 100 through the process chamber, the process gas provided by the gas supply system 200 is delivered to the first jet hole 103 between at least a portion of the support feet 102 (e.g., ...). Figure 11 As shown in the figure), the film is sprayed onto the wafer (not shown) through the first jet hole 103 to compensate for the situation where the film layer near the support pillar 101 is too thin or too thick. This makes it easy for the film thickness at the support pillar 101 to be the same as the film thickness at the center of the wafer, and also makes it easy for the film thickness at the edge of the wafer to be the same. This reduces the difficulty of process control and helps to improve product yield.

[0072] The process chamber is used to house the wafer boat 100, providing a closed and controlled environment for the wafers of semiconductor equipment to undergo process processing.

[0073] In this embodiment, the size and shape of the process chamber need to match the size of the crystal boat 100 to better accommodate the crystal boat 100.

[0074] Continue to refer to Figure 9 and Figure 10The semiconductor device further includes: a support base 300 disposed at the bottom of the crystal boat 100; a heat insulation plate 400 disposed at the bottom of the support base 300; and a tray structure 500 disposed at the bottom of the heat insulation plate 400.

[0075] The support base 300 is used to provide stable support for the structure of the crystal boat 100, ensuring the stability of the wafer during the processing.

[0076] In this embodiment, the support base 300 is disc-shaped.

[0077] The heat insulation plate 400 is located at the bottom of the support base 300, which makes it difficult for heat exchange to occur between the crystal boat 100 and the tray structure 500 below the heat insulation plate 400. This keeps the crystal boat 100 in a stable and controllable temperature environment, which is conducive to the stability of the process and can improve the yield of the product.

[0078] In this embodiment, the size and shape of the heat insulation plate 400 are matched with the support base 300.

[0079] In this embodiment, the heat insulation plate 400 is made of a material with low thermal conductivity, specifically, ceramic.

[0080] It should be noted that there are multiple heat insulation plates 400, specifically, there are five heat insulation plates 400. In other embodiments, the number of heat insulation plates may also be four or six.

[0081] The tray structure 500 is used to support the base 300 and indirectly support the crystal boat 100.

[0082] In this embodiment, the tray structure 500 is fixedly installed at the bottom of the heat insulation tray 400, specifically by means of bolt fixing or snap-fit ​​fixing.

[0083] The gas supply system 200, located in the process chamber and connected to the first jet port 103, is used to provide process gas during wafer processing.

[0084] In this embodiment, the support column 101 of the crystal boat 100 includes an axially extending internal channel 106, which communicates with the first jet hole 103, and the bottom of the internal channel 106 communicates with the air supply system 200; the air supply system 200 includes: an air inlet pipe 201; and a first air supply branch 202, the air inlet end of the first air supply branch 202 being connected to the output end of the air inlet pipe 201, and the air outlet end of the first air supply branch 202 being connected to the bottom of the internal channel.

[0085] The intake pipe 201 serves as the main trunk of the entire gas delivery system 200. It transports gas from the gas source to the first gas delivery branch 202, which connects to the bottom of the column channel 106. This, in turn, connects the intake pipe 201 to the first jet nozzle 103. During the process, the gas passes through the intake pipe 201, the first gas delivery branch 202, the column channel 106, and the first jet nozzle 103 sequentially. The gas is then sprayed onto the wafer through the first jet nozzle 103 to compensate for excessively thin or thick film layers near the support pillar 101. This ensures that the film thickness at the support pillar 101 is similar to that at the wafer center, and also makes the film thickness at the wafer edges more uniform. This reduces the difficulty of process control and improves product yield.

[0086] It should be noted that the air intake pipe 201 passes through the support base 300, the heat insulation plate 400, the tray structure 500, and the base plate 105.

[0087] In this embodiment, the first air supply branch 202 is connected to the first air jet 103 through the column channel 106, which is beneficial to improving the space utilization rate inside the crystal boat 100.

[0088] In this embodiment, there is one first air delivery branch 202, and the first air delivery branch 202 is ring-shaped. The first air delivery branch 202 is disposed at the bottom of the plurality of support columns 101 and communicates with the column internal channels 106 within the plurality of support columns 101. In other embodiments, there may be multiple first air delivery branches, each communicating with the bottom of the column internal channel 106 within each of the support columns. Specifically, there are three first air delivery branches, each communicating with the first jet hole on one of the three support columns.

[0089] It should be noted that the first gas supply branch 202 is embedded in the support base 300, which helps to reduce the high temperature and chemical gas corrosion that the first gas supply branch 202 is subjected to.

[0090] In this embodiment, the inlet end of the first gas supply branch 202 is connected to the outlet end of the inlet pipe 201 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the first gas supply branch 202 and the sealing connector and prevent gas leakage. Similarly, the outlet end of the first gas supply branch 202 is connected to the column channel 106 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the first gas supply branch 202 and the column channel 106 and prevent gas leakage.

[0091] As an example, sealing connections include flanges or quick couplings.

[0092] In this embodiment, the intake pipe 201 is equipped with a flow controller and a pressure regulator to control the gas flow and pressure.

[0093] refer to Figure 10 and Figure 12 The semiconductor device includes a top jet unit 700 disposed on the top of the crystal boat 100, the top jet unit 700 being connected to the gas delivery system 200 and used to jet gas onto the top of the crystal boat 100.

[0094] The top jet unit 700 is connected to the gas delivery system 200, which allows the top jet unit 700 to jet gas on the top of the wafer boat 100. This makes the gas distribution more uniform, reduces the thickness deviation of the wafer center and edge caused by uneven gas distribution, and thus improves product yield and quality.

[0095] In this embodiment, the top jet unit 700 includes: a top annular pipe 701; and a plurality of second jet holes 702, spaced apart on the top annular pipe 701, the second jet holes 702 being obliquely downward and facing outward of the wafer boat 100. Thus, when the semiconductor device is operating, the gas, guided by the second jet holes 702, can move precisely to the side of the wafer boat 100, controlling the gas environment around the wafer boat 100 and making it easier for the gas to distribute in the edge region of the wafer. This compensates for the uneven gas distribution caused by the support pillars 101, improves the film thickness difference between the wafer edge and the center region, and helps improve product yield.

[0096] In this embodiment, the air delivery system 200 further includes a second air delivery branch 203, the air inlet of the second air delivery branch 203 being connected to the output end of the air inlet pipe 201, and the air outlet of the second air delivery branch 203 being connected to the top jet unit 700.

[0097] The inlet end of the second air supply branch 203 is connected to the inlet pipe 201, and the outlet end of the second air supply branch 203 is connected to the top jet unit 700. In other words, the second air supply branch 203 connects the inlet pipe 201 and the top jet unit 700. When the semiconductor device is working, gas flows out from the gas source, passes through the inlet pipe 201, the second air supply branch 203, and the top annular pipe 701, and is then ejected from the second jet hole 702, realizing the delivery of gas from the source to the target location.

[0098] Specifically, the inlet end of the second gas supply branch 203 is connected to the outlet end of the inlet pipe 201 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the second gas supply branch 203 and the sealing connector and prevent gas leakage. Similarly, the outlet end of the second gas supply branch 203 is connected to the top annular pipe 701 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the second gas supply branch 203 and the top annular pipe 701 and prevent gas leakage.

[0099] As an example, sealing connections include flanges or quick couplings.

[0100] It should also be noted that in this embodiment, the second gas supply branch 203 passes through the internal channel 106 of the column and communicates with the top annular pipe 701. In other embodiments, the second gas supply branch may also be located outside the crystal boat and communicate with the top annular pipe.

[0101] refer to Figure 10 and Figure 13 The semiconductor device includes a bottom jetting unit 600 disposed at the bottom of the crystal boat 100. The bottom jetting unit 600 is connected to the gas delivery system 200 and is used to jet gas at the bottom of the crystal boat 100.

[0102] The bottom jet unit 600 is connected to the gas delivery system 200, which allows the bottom jet unit 600 to jet gas at the bottom of the wafer boat 100. This makes the gas distribution more uniform, reduces the thickness deviation of the wafer center and edge caused by uneven gas distribution, and thus improves the product yield.

[0103] In this embodiment, the bottom jet unit 600 includes: a bottom annular pipe 601; and a third jet hole 602 disposed on the bottom annular pipe 601, wherein the third jet hole 602 is obliquely upward and facing the outside of the crystal boat 100.

[0104] When the semiconductor device is working, the gas can move precisely to the side of the crystal boat 100 under the guidance of the third jet hole 602. This can improve the gas environment around the crystal boat 100 and make the gas easier to distribute in the edge area of ​​the wafer. This can not only compensate for the uneven gas distribution caused by the support pillar 101, but also improve the difference in film thickness between the wafer edge and the center area, which is beneficial to improving the product yield.

[0105] In this embodiment, the bottom annular pipe 601 is embedded within the support base 300, and the third jet hole 602 is exposed outside the support base 300. In other embodiments, the bottom annular pipe may also be exposed outside the support base, and the third jet hole may also be exposed outside the support base.

[0106] The air delivery system 200 includes a third air delivery branch 204, the air inlet of the third air delivery branch 204 being connected to the output end of the air inlet pipe 201, and the air outlet of the third air delivery branch 204 being connected to the bottom jet unit 600.

[0107] The third air supply branch 204 connects the air inlet pipe 201 and the bottom jet unit 600. When the semiconductor device is working, the gas flows out from the gas source, passes through the air inlet pipe 201, the third air supply branch 204, and the bottom annular pipe 601, and is then ejected from the third jet hole 602, realizing the delivery of gas from the source to the target position.

[0108] It should be noted that the third gas supply branch 204 is embedded in the support base 300, which helps to reduce the corrosion of the third gas supply branch 204 by high temperature and chemical gases.

[0109] Specifically, the inlet end of the third gas supply branch 204 is connected to the outlet end of the inlet pipe 201 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the third gas supply branch 204 and the sealing connector and prevent gas leakage. Similarly, the outlet end of the third gas supply branch 204 is connected to the bottom annular pipe 601 via a sealing connector (not shown in the figure), which helps to ensure the airtightness between the third gas supply branch 204 and the bottom annular pipe 601 and prevent gas leakage.

[0110] As an example, sealing connections include flanges or quick couplings.

[0111] It should be noted that the bottom jet unit 600 and the top jet unit 700 form a corresponding gas distribution system at the bottom and top of the wafer boat 100, respectively, jointly optimizing the gas flow and distribution within the process chamber. This not only compensates for the uneven gas distribution caused by the support pillar 101, but also improves the film thickness difference between the wafer edge and the center region, which is beneficial to improving product yield.

[0112] It should also be noted that the third gas supply branch 204, the second gas supply branch 203, and the first gas supply branch 202 are all directly connected to the air intake pipe 201. In other words, the third gas supply branch 204, the first gas supply branch 202, and the second gas supply branch 203 are all connected to the same gas source. This makes the first jet hole 103, the second jet hole 702, and the third jet hole 602 eject gas of the same composition, which helps to maintain the consistency of the gas in the entire process chamber.

[0113] It should also be noted that the top jet unit 700 sprays downwards at an angle, and the bottom jet unit 600 sprays upwards at an angle, forming a symmetrical airflow field, which helps to make the thin film deposition in the wafer edge area more uniform. At the same time, the first jet hole 103 on the support pillar 101 provides precise local gas spraying, which can avoid turbulence interference and help solve the problem of the film layer being too thin or too thick near the support pillar 101. Through the coordinated cooperation of the top jet unit 700, the bottom jet unit 600, and the first jet hole 103 on the support pillar 101, a complete gas compensation system is formed, which ultimately achieves the goal of improving the overall film uniformity of the wafer and effectively improves the product yield.

[0114] Furthermore, when the semiconductor equipment is idle and the wafer boat 100 is unloaded, the support pillar 101 is purged with a purging gas, specifically N2, Ar, O2, etc. The purging gas is delivered to the first jet hole 103 via the gas delivery system 200 and the internal channel 106, effectively preventing excessive film accumulation and detachment on the support pillar 101, reducing the risk of wafer contamination, improving product yield, and ensuring the stability of the surface state of the support pillar 101, thus guaranteeing the consistency of the deposition process. In some cases, the purging gas can also be injected into the process chamber through the top jet unit 700 and the bottom jet unit 600.

[0115] During semiconductor manufacturing, a film layer can accumulate on the surface of the support foot 102, the internal channel 106, and the interior of the gas supply system 200 during long-term use of semiconductor equipment. To address this issue, when the semiconductor equipment is idle and the crystal boat 100 is unloaded, cleaning gas can be introduced through the gas supply system 200 into the first jet hole 103, the top jet unit 700, and the bottom jet unit 600 to remove the accumulated film layer from the surface of the support foot 102, the internal channel 106, and the interior of the gas supply system 200. Specifically, the cleaning gas includes one or more of HF, F2, N2, ClF3, NF3, and NH3. This preventative maintenance measure reduces the risk of blockage in the gas supply system 200 and the internal channel 106, effectively extending the lifespan of the semiconductor equipment, reducing manual maintenance costs, and ultimately improving product yield and process stability.

[0116] refer to Figure 14 The diagram shows a structural schematic of a second embodiment of the semiconductor device according to this utility model.

[0117] The similarities between this utility model and the previous embodiment will not be repeated here. The difference is that the air delivery system includes: an air inlet pipe (not shown in the figure); one or more air delivery pipes, which are disposed in the column channel 106a. The air inlet end of the air delivery pipe is connected to the output end of the air inlet pipe. The air delivery pipe is provided with multiple air outlets, and the air outlets of the air delivery pipe are connected to the first jet hole 103a.

[0118] The column channel 106a provides space for one or more air delivery pipes. The air inlet end of the air delivery pipe is connected to the air inlet pipeline, and the air outlet end of the air delivery pipe is connected to the first jet hole 103a, so that the first jet hole 103a obtains a stable gas supply.

[0119] In this embodiment, the support column 101a includes a bottom region I, a middle region II, and a top region III distributed along the axial direction; the column channel 106a is simultaneously provided with multiple airflow delivery pipes, namely a first airflow delivery pipe 205a, a second airflow delivery pipe 206a, and a third airflow delivery pipe 207a, and the air outlet end of the first airflow delivery pipe 205a is connected to the first jet hole 103a of the bottom region I; the air outlet end of the second airflow delivery pipe 206a is connected to the first jet hole 103a of the middle region II; and the air outlet end of the third airflow delivery pipe 207a is connected to the first jet hole 103a of the top region III.

[0120] By providing a first gas delivery pipe 205a, a second gas delivery pipe 206a, and a third gas delivery pipe 207a in the inner channel 106a of the support pillar 101a, and connecting them to the first jet holes 103a in the bottom region I, the middle region II, and the top region III respectively, the flexibility of gas distribution is improved. This effectively compensates for the problem of the film layer being too thin or too thick near the support pillar 101a, improves the inconsistent film thickness between the wafer edge and the center, and enhances the uniformity of thin film deposition.

[0121] It should be noted that, in addition to having a first airflow delivery pipe 205a, a second airflow delivery pipe 206a, and a third airflow delivery pipe 207a (the first airflow delivery pipe 205a, the second airflow delivery pipe 206a, and the third airflow delivery pipe 207a are distinguished by different fillings), the column channel 106a also has a second air supply branch 203a that supplies air to the top jet unit 700a.

[0122] In this embodiment, the structures of the top jet unit 700a, the bottom jet unit 60a, and the air delivery system 200a are the same as in the first embodiment, and will not be described again here.

[0123] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A crystal boat, characterized in that, The crystal boat includes: Support columns, wherein there are multiple support columns, and they are arranged at intervals along the circumference; Multiple support feet are spaced apart on the support column along the axial direction of the support column, and the support feet at the same height on different support columns are used to support the same wafer; A first jet hole is located on the support post between at least a portion of the support feet, and the first jet hole is configured to face the wafer.

2. The crystal boat as described in claim 1, characterized in that, The support column includes an internal channel extending axially. The first air jet hole penetrates the side wall of the support column and communicates with the internal channel of the column.

3. The crystal boat as described in claim 1, characterized in that, The first jet hole extends horizontally or diagonally downward toward the edge of the wafer.

4. The crystal boat as described in claim 1, characterized in that, A plurality of first air jet holes are provided between adjacent support legs, and the plurality of first air jet holes are spaced apart along the axial direction of the support column, or the plurality of first air jet holes are spaced apart on the same horizontal plane.

5. The crystal boat as described in claim 1, characterized in that, Along the axial direction of the support column, the first air jet is located at the midpoint between two adjacent support feet.

6. The crystal boat as described in claim 2, characterized in that, The support column includes a bottom region, a middle region, and a top region distributed along the axial direction; The first air vent is provided between adjacent support feet in one or more of the bottom, middle, and top regions.

7. The crystal boat as described in claim 6, characterized in that, The internal channel is located in the bottom region of the supporting column; Alternatively, the internal channel is located in the bottom and middle regions of the support column; Alternatively, the internal channels are located in the bottom, middle, and top regions of the support column.

8. The crystal boat as described in claim 1, characterized in that, The crystal boat also includes: A top plate is located at the top of the plurality of support columns and is connected to the top of the support columns; The base plate is located at the bottom of the plurality of support columns and is connected to the bottom of the support columns.

9. A semiconductor device, characterized in that, include: Process chambers; The crystal boat as described in any one of claims 1 to 8 is located in the process chamber; A gas supply system, located in the process chamber and connected to the first jet orifice, is used to supply gas.

10. The semiconductor device as claimed in claim 9, characterized in that, The support column of the crystal boat includes an internal channel extending axially; the first air jet hole penetrates the side wall of the support column and communicates with the internal channel. The air delivery system includes: an air inlet pipe; One or more airflow delivery pipes are disposed in the column channel, the air inlet end of the airflow delivery pipe is connected to the output end of the air inlet pipe, the airflow delivery pipe is provided with multiple air outlets, and the air outlets of the airflow delivery pipe are connected to the first jet hole.

11. The semiconductor device as claimed in claim 10, characterized in that, The support column includes a bottom region, a middle region, and a top region distributed along the axial direction; The column channel is equipped with multiple airflow delivery pipes, namely a first airflow delivery pipe, a second airflow delivery pipe, and a third airflow delivery pipe. The air outlet of the first airflow delivery pipe is connected to the first jet hole in the bottom region; the air outlet of the second airflow delivery pipe is connected to the first jet hole in the middle region; and the air outlet of the third airflow delivery pipe is connected to the first jet hole in the top region.

12. The semiconductor device as claimed in claim 9, characterized in that, The support column of the crystal boat includes an axially extending internal channel that communicates with the first jet hole and the bottom of the internal channel is connected to the gas delivery system.

13. The semiconductor device as claimed in claim 12, characterized in that, The gas delivery system includes: Intake pipe; The first air supply branch has its inlet end connected to the outlet end of the air supply pipe, and its outlet end connected to the bottom of the column channel.

14. The semiconductor device as claimed in claim 13, characterized in that, The number of the first air supply branch is one, and the first air supply branch is in a ring shape. The first air supply branch is located at the bottom of the plurality of support columns and is connected to the column channel in the plurality of support columns. Alternatively, there may be multiple first air supply branches, each of which is connected to the bottom of the internal channel within each of the support columns.

15. The semiconductor device as claimed in claim 9, characterized in that, The semiconductor device includes: A top jet unit is disposed on the top of the crystal boat and is connected to the gas delivery system for jetting gas onto the top of the crystal boat.

16. The semiconductor device as claimed in claim 15, characterized in that, The gas delivery system includes: Intake pipe; The second air supply branch has its inlet end connected to the outlet end of the air supply pipe, and its outlet end connected to the top jet unit.

17. The semiconductor device as claimed in claim 15, characterized in that, The top jet unit includes: a top annular pipe; Multiple second jet holes are spaced apart on the top annular pipe, and the second jet holes are angled downward and facing outward of the crystal boat.

18. The semiconductor device as claimed in claim 9, characterized in that, The semiconductor device includes: A bottom jet unit is disposed at the bottom of the crystal boat and is connected to the gas delivery system for jetting gas at the bottom of the crystal boat.

19. The semiconductor device as claimed in claim 18, characterized in that, The gas delivery system includes: Intake pipe; The third air supply branch has its inlet end connected to the outlet end of the inlet pipe and its outlet end connected to the bottom jet unit.

20. The semiconductor device as claimed in claim 18, characterized in that, The bottom jet unit includes: a bottom annular pipe; Multiple third jet holes are spaced apart on the bottom annular pipe, and the third jet holes are obliquely upward and facing the outside of the crystal boat.

21. The semiconductor device as claimed in claim 9, characterized in that, The semiconductor device further includes: a support base disposed at the bottom of the crystal boat; A heat insulation plate is disposed at the bottom of the support base; A tray structure is provided at the bottom of the heat-insulating tray.

Images