Chuck device and laser annealing equipment

Abstract

The utility model discloses a chuck device and laser annealing equipment. The chuck device comprises a bearing platform, the bearing platform comprises a heating component and a wafer carrying disc on the heating component, and the distance between the wafer carrying disc and the heating component is adjustable; the temperature measuring part is used for acquiring the temperature of each measuring position of the wafer loading disc or the wafer; the levelness measuring part is used for acquiring the levelness of the wafer loading disc or the wafer; the first automatic adjusting assembly is used for automatically adjusting the distance between the wafer carrying disc and the heating part according to the temperature obtained by the temperature measuring part; and the second automatic adjusting assembly automatically adjusts the levelness of the wafer carrying disc according to the levelness obtained by the levelness measuring component. According to the technical scheme, the first automatic adjusting assembly and the second automatic adjusting assembly can automatically adjust the distance and the levelness according to the temperature and the levelness, the convenience and the real-time performance of calibrating the wafer carrying disc can be improved, the process processing effect is good, and then the process processing quality can be improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a chuck device and a laser annealing equipment. Background Technology

[0002] In semiconductor manufacturing, wafers undergo multiple processing steps. Among these, laser annealing, due to its advantage of achieving an ultra-low thermal budget, has been widely used in semiconductor manufacturing processes. For example, it is used to activate doping in specific areas of the wafer, or to modify or recrystallize materials.

[0003] Laser annealing involves scanning the wafer surface with a laser beam and briefly pausing in each scanned area to heat that area to a predetermined temperature. The uniformity of heating the wafer during laser annealing is crucial to the quality of the process.

[0004] Therefore, improving the heat uniformity of wafers during laser annealing to enhance the quality of laser annealing has become an urgent problem to be solved. Utility Model Content

[0005] The problem solved by this utility model embodiment is to provide a chuck device and laser annealing equipment to improve the quality of laser annealing processing.

[0006] To address the aforementioned problems, this utility model provides a laser annealing apparatus, comprising: a support platform including a heating component and a wafer carrier disk disposed on the heating component for supporting a wafer, the distance between the wafer carrier disk and the heating component being adjustable; a temperature measuring component for acquiring the temperature at various measuring positions of the wafer carrier disk or the wafer; a levelness measuring component for acquiring the levelness of the wafer carrier disk or the wafer; a first automatic adjustment component located at the bottom of the wafer carrier disk, the first automatic adjustment component being used to automatically adjust the distance between the wafer carrier disk and the heating component based on the temperature acquired by the temperature measuring component; and a second automatic adjustment component located at the bottom of the heating component, the second automatic adjustment component being used to automatically adjust the levelness of the wafer carrier disk via the heating component based on the levelness acquired by the levelness measuring component.

[0007] Accordingly, this utility model embodiment also provides a laser annealing device, including: a chamber; the chuck device described in this utility model embodiment, located in the chamber; and a laser, located in the chamber and above the wafer carrier.

[0008] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0009] The chuck device provided in this embodiment includes: a support platform, a temperature measuring component, a levelness measuring component, a first automatic adjustment component, and a second automatic adjustment component. The support platform includes a heating component and a wafer carrier disk disposed on the heating component. The distance between the wafer carrier disk and the heating component is adjustable. The first automatic adjustment component is used to automatically adjust the distance between the wafer carrier disk and the heating component according to the temperature obtained by the temperature measuring component. The second automatic adjustment component is used to automatically adjust the levelness of the wafer carrier disk through the heating component according to the levelness obtained by the levelness measuring component. Because the temperature measuring component can monitor the temperature of each measurement position of the wafer carrier or wafer after heating by the heating component, and the first automatic adjustment component can automatically adjust the distance between the wafer carrier and the heating component based on the temperature obtained by the temperature measuring component, and the second automatic adjustment component can automatically adjust the level of the wafer carrier based on the levelness obtained by the levelness measuring component, it is beneficial to improve the convenience and real-time performance of calibrating the temperature uniformity and levelness of the wafer carrier, thereby ensuring better temperature uniformity and levelness of the wafer carrier during process processing, resulting in better process processing effect, and thus improving the quality of wafer process processing. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the structure of an embodiment of the chuck device of this utility model;

[0011] Figure 2 This is a schematic diagram of an embodiment of the chuck device and laser of this utility model;

[0012] Figure 3 This is a top view of an embodiment of the laser annealing equipment of this utility model. Detailed Implementation

[0013] As the background technology indicates, the thermal uniformity of the wafer during laser annealing is closely related to the quality of the laser annealing process. If the initial temperatures of different areas of the wafer carrier are inconsistent, the laser will adjust its output power based on feedback from the temperature measurement components during the laser annealing process to ensure that all areas of the wafer reach the preset temperature. This can easily lead to temperature fluctuations in different areas of the wafer during laser annealing, resulting in poor thermal uniformity and consequently, poor quality of the laser annealing process. If the different areas of the wafer carrier are not on the same horizontal plane, the laser focus may not be on the wafer in some areas during the laser annealing process. This can cause temperature differences between these areas and other normal areas, leading to poor thermal uniformity and consequently, poor quality of the laser annealing process.

[0014] To address the aforementioned technical problems, this utility model provides a laser annealing apparatus, comprising: a support platform including a heating component and a wafer carrier disk disposed on the heating component for supporting a wafer, wherein the distance between the wafer carrier disk and the heating component is adjustable; a temperature measuring component for acquiring the temperature at various measuring positions of the wafer carrier disk or the wafer; a levelness measuring component for acquiring the levelness of the wafer carrier disk or the wafer; a first automatic adjustment component located at the bottom of the wafer carrier disk, wherein the first automatic adjustment component is used to automatically adjust the distance between the wafer carrier disk and the heating component based on the temperature acquired by the temperature measuring component; and a second automatic adjustment component located at the bottom of the heating component, wherein the second automatic adjustment component is used to automatically adjust the levelness of the wafer carrier disk via the heating component based on the levelness acquired by the levelness measuring component.

[0015] The solution disclosed in this utility model embodiment includes: a support platform, a temperature measuring component, a levelness measuring component, a first automatic adjustment component, and a second automatic adjustment component. The support platform includes a heating component and a wafer carrier disk disposed on the heating component. The distance between the wafer carrier disk and the heating component is adjustable. The first automatic adjustment component is used to automatically adjust the distance between the wafer carrier disk and the heating component according to the temperature obtained by the temperature measuring component. The second automatic adjustment component is used to automatically adjust the levelness of the wafer carrier disk through the heating component according to the levelness obtained by the levelness measuring component. Because the temperature measuring component can monitor the temperature of each measurement position of the wafer carrier or wafer after heating by the heating component, and the first automatic adjustment component can automatically adjust the distance between the wafer carrier and the heating component based on the temperature obtained by the temperature measuring component, and the second automatic adjustment component can automatically adjust the level of the wafer carrier based on the levelness obtained by the levelness measuring component, it is beneficial to improve the convenience and real-time performance of calibrating the temperature uniformity and levelness of the wafer carrier, thereby ensuring better temperature uniformity and levelness of the wafer carrier during process processing, resulting in better process processing effect, and thus improving the quality of wafer process processing.

[0016] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0017] Figure 1 This is a schematic diagram of the structure of an embodiment of the chuck device of this utility model.

[0018] refer to Figure 1In this embodiment, the chuck device 10 includes: a support platform 100, which includes a heating element 101 and a wafer carrier 102 disposed on the heating element 101 and used to support a wafer, the distance between the wafer carrier 102 and the heating element 101 being adjustable; a temperature measuring element 111, used to acquire the temperature of various measuring positions of the wafer carrier 102 or the wafer; a levelness measuring element 112, used to acquire the levelness of the wafer carrier 102 or the wafer; a first automatic adjustment component 120, located at the bottom of the wafer carrier 102, the first automatic adjustment component 120 being used to automatically adjust the distance between the wafer carrier 102 and the heating element 101 according to the temperature acquired by the temperature measuring element 111; and a second automatic adjustment component 130, located at the bottom of the heating element 101, the second automatic adjustment component 130 being used to automatically adjust the levelness of the wafer carrier 102 through the heating element 101 according to the levelness acquired by the levelness measuring element 112.

[0019] Here, wafer refers to test wafer (dummy wafer).

[0020] In this embodiment, laser annealing is used as an example of the process. In other embodiments, the process can also be other types of processes.

[0021] In this embodiment, the chuck device 10 is used to be disposed in the chamber of a semiconductor device to provide a process basis for the wafer to be processed in the chamber.

[0022] The support platform 100 is used to support the wafer and to heat the back side of the wafer to reduce the difference between the initial temperature of the wafer and the processing temperature, thereby reducing the probability of wafer fragmentation during laser annealing. Specifically, the wafer carrier 102 is used to support the wafer, and the heating element 101 is used to heat the back side of the wafer by heating the wafer carrier 102.

[0023] In this embodiment, the support platform 100 is a movable support platform capable of moving horizontally along a preset path.

[0024] During the horizontal movement of the carrier platform 100 along a preset path, the various measurement positions of the wafer carrier 102 or the wafer are sequentially located within the measurement range of the temperature measuring component 111, thereby facilitating the temperature measuring component 111 to obtain the temperature of each measurement position of the wafer carrier 102 or the wafer.

[0025] The temperature measuring component 111 is used to obtain the temperature of each measuring position of the wafer carrier 102 or the wafer, so that the first automatic adjustment component 120 can automatically adjust the distance between the wafer carrier 102 and the heating component 101 according to the temperature obtained by the temperature measuring component 111.

[0026] The temperature at each measurement location of the wafer carrier 102 refers to the temperature at each measurement location of the wafer carrier 102 after the heating element 101 heats the wafer carrier 102 and before any processing (e.g., laser annealing) is performed on the wafer. The temperature at each measurement location of the wafer refers to the temperature at each measurement location of the wafer after the heating element 101 heats the wafer via the wafer carrier 102 and before any processing (e.g., laser annealing) is performed on the wafer.

[0027] It should be noted that the temperature measuring component 111 is the first temperature measuring component.

[0028] In this embodiment, the temperature measuring component 111 includes a pyrometer. Specifically, the pyrometer is a non-contact pyrometer. More specifically, the non-contact pyrometer includes a radiation pyrometer. In other embodiments, the non-contact pyrometer may also be other types of pyrometers.

[0029] In this embodiment, the temperature measuring component 111 is disposed in the chamber and above the bearing surface of the wafer carrier 102. There is a large space above the bearing surface of the wafer carrier 102, which helps to reduce the difficulty of setting up the temperature measuring component 111.

[0030] The levelness measuring component 112 is used to obtain the levelness of the wafer carrier 102 or the wafer, so that the second automatic adjustment component 130 can automatically adjust the levelness of the wafer carrier 102 by means of the heating component based on the levelness obtained by the levelness measuring component.

[0031] In this embodiment, the levelness measuring component 112 is a rangefinder.

[0032] The rangefinder is used to obtain the levelness of the wafer carrier 102 by acquiring the distance from the rangefinder to each measurement position of the wafer carrier 102, or to obtain the levelness of the wafer by acquiring the distance from the rangefinder to each measurement position of the wafer.

[0033] Specifically, the rangefinder includes a laser rangefinder.

[0034] Laser rangefinders offer high measurement efficiency and good measurement accuracy, which helps to improve measurement efficiency while obtaining more accurate levelness.

[0035] In this embodiment, the support platform 100 is a movable support platform capable of moving horizontally along a preset path.

[0036] It should be noted that the carrier platform 100 is a movable carrier platform capable of moving horizontally along a preset path. When the levelness measuring component 112 is a rangefinder, during the horizontal movement of the carrier platform 100 along the preset path, each measurement position of the wafer carrier 102 or the wafer is sequentially located within the measurement range of the rangefinder. This allows the rangefinder to obtain the vertical distance from each measurement position of the wafer carrier 102 or the wafer to the rangefinder, thereby facilitating the acquisition of the levelness of the wafer carrier or the wafer through the vertical distance from each measurement position to the rangefinder.

[0037] In this embodiment, the levelness measuring component 112 is disposed in the chamber and located above the bearing surface of the wafer carrier 102. There is a large space above the bearing surface of the wafer carrier 102, which helps to reduce the difficulty of setting up the levelness measuring component 112.

[0038] As an example, the chuck device 10 is configured to be disposed in the chamber of a semiconductor device, and the temperature measuring component 111 and the levelness measuring component 112 are both configured in the chamber and located above the bearing surface of the wafer carrier 102.

[0039] In this embodiment, the chuck device 10 further includes: a second fixing component 150, which is fixed in the chamber and located above the bearing surface of the wafer carrier 102; the temperature measuring component 111 and the levelness measuring component 112 are fixedly connected to the same second fixing component 150.

[0040] The temperature measuring component 111 and the levelness measuring component 112 are fixedly connected to the same second fixing component 150, which helps to save space and thus reduces the difficulty of setting other components in the chamber.

[0041] Because the temperature measuring component 111 can monitor the temperature of each measurement position of the wafer carrier 102 or the wafer after being heated by the heating component 101, and the first automatic adjustment component 120 can automatically adjust the distance between the wafer carrier 102 and the heating component 101 according to the temperature obtained by the temperature measuring component 111, it is beneficial to improve the convenience and real-time performance of calibrating the distance between the wafer carrier 102 and the heating component 101. Correspondingly, it is also beneficial to improve the convenience and real-time performance of calibrating the temperature uniformity of the wafer carrier 102. This ensures that after the heating component 101 heats the wafer carrier 102 or the wafer, and before the wafer is processed (e.g., laser annealing), the temperature uniformity of each area of ​​the wafer carrier 102 or the wafer is better, thereby ensuring better temperature uniformity of the wafer carrier during the processing. This, in turn, provides a better process foundation for subsequent wafer processing, resulting in better processing effects and improving the quality of wafer processing.

[0042] The second automatic adjustment component 130 can automatically adjust the level of the wafer carrier 102 through the heating component 101 based on the levelness obtained by the levelness measuring component 112, which improves the convenience and real-time performance of calibrating the levelness of the wafer carrier 102. Furthermore, the automatic adjustment component 130's ability to automatically adjust the levelness of the wafer carrier 102 ensures better uniformity of the vertical distance from the processing equipment to each region of the wafer during processing, thereby improving the quality of wafer processing. For example, during laser annealing, better uniformity of the vertical distance from the laser to each region of the wafer helps reduce the amplitude and probability of fluctuations in the laser's output power, which in turn improves the temperature uniformity of laser annealing in each region of the wafer, thus improving the quality of laser annealing.

[0043] Therefore, the first automatic adjustment component 120 can automatically adjust the distance between the wafer carrier 102 and the heating component 101 according to the temperature obtained by the temperature measuring component 111, and the second automatic adjustment component 130 can automatically adjust the level of the wafer carrier 102 according to the levelness obtained by the levelness measuring component 112. This is beneficial to improving the convenience and real-time performance of calibrating the wafer carrier 102. For example, the wafer carrier 102 can be calibrated before and after laser annealing of each wafer, so that the heating uniformity of each position of the wafer is better during laser annealing, which is beneficial to improving the quality of laser annealing of the wafer.

[0044] In this embodiment, the first automatic adjustment component 120 includes: a first power component 121, fixed to the bottom of the support platform 100; and a first linear transmission component 122, passing through the heating component 101. One end of the first linear transmission component 122 is connected to the first power component 121, and the other end abuts against the bottom of the wafer carrier 102. The first linear transmission component 122 is used to drive the wafer carrier 102 to move vertically toward or away from the heating component 101.

[0045] The vertical direction refers to the direction perpendicular to the bearing surface of the wafer carrier 102.

[0046] The first power component 121 is used to provide a power source for the first linear transmission component 122.

[0047] The first linear transmission component 122 is used to drive the wafer carrier 102 to move vertically toward or away from the heating component 101, so as to automatically adjust the distance between the wafer carrier 102 and the heating component 101.

[0048] Specifically, the first power component 121 includes a first motor, which typically has a simpler structure and smaller size, which helps to reduce the difficulty of installing and arranging the first power component 121.

[0049] More specifically, the first motor includes one or both of stepper motors and servo motors.

[0050] Stepper motors and servo motors facilitate precise control, which helps reduce the difficulty of precisely adjusting the distance between the wafer carrier 102 and the heating element 101, thereby further improving the temperature uniformity of each area of ​​the wafer carrier 102 or the wafer.

[0051] As an example, the first linear drive component 122 is a lead screw. In other examples, the first linear drive component may also be other components capable of achieving linear drive.

[0052] In other embodiments, the first automatic adjustment component may also be a linear motor or an electric actuator, etc.

[0053] In this embodiment, the second automatic adjustment component 130 includes: a second power component 131 located below the heating component 101; and a second linear transmission component 132, one end of which is connected to the second power component 131 and the other end of which abuts against the bottom of the support platform 100. The second linear transmission component 132 is used to adjust the horizontal position of the wafer carrier 102.

[0054] The second power component 131 is used to provide a power source for the second linear transmission component 132.

[0055] The second linear transmission component 132 is used to adjust the horizontal position of the support platform 100 to adjust the levelness of the wafer carrier 102.

[0056] Specifically, the second power component 131 includes a second motor. The reason for including a second motor in the second power component 131 is similar to the reason for including a first motor in the first power component 121, and therefore will not be repeated here.

[0057] More specifically, the second motor includes one or both of stepper motors and servo motors. The reasons for including one or both of stepper motors and servo motors in the second motor are similar to those for including one or both of stepper motors and servo motors in the first motor, and therefore will not be repeated here.

[0058] As an example, the second linear drive component 132 is a lead screw. In other examples, the second linear drive component may also be other components capable of achieving linear drive.

[0059] In other embodiments, the second automatic adjustment component may also be a linear motor or an electric actuator, etc.

[0060] In one embodiment, the chuck device further includes: a controller (not shown), the input of which is coupled to the output of the temperature measuring component 111 and the output of the levelness measuring component 112, and the output of which is coupled to the input of the first automatic adjustment component 120 and the input of the second automatic adjustment component 130, respectively. The controller is used to automatically adjust the distance between the wafer carrier 102 and the heating component 101 by the first automatic adjustment component 120 according to the temperature obtained by the temperature measuring component 111, and to automatically adjust the levelness of the wafer carrier 102 by the second automatic adjustment component 130 through the heating component 101 according to the levelness obtained by the levelness measuring component 112.

[0061] The controller enables the first automatic adjustment component 120 to automatically adjust the distance between the wafer carrier 102 and the heating component 101, and the controller enables the second automatic adjustment component 130 to automatically adjust the levelness of the wafer carrier 102 through the heating component 101, which helps to further improve the efficiency of calibrating the temperature uniformity and levelness of the wafer carrier 102.

[0062] It is understood that the controller stores a program that can adjust the distance between the wafer carrier 102 and the heating element 101 according to the temperature of each measurement position of the wafer carrier 102 or the wafer, and stores a program that can adjust the levelness of the wafer carrier 102 according to the levelness of the wafer carrier 102 or the wafer.

[0063] In another embodiment, the chuck device may not include a controller. The first automatic adjustment component 120 is input with parameters based on the temperature of each measurement position of the wafer carrier 102 or wafer obtained by the temperature measuring component 111, and relevant process experience (e.g., the temperature distribution of each measurement position of the wafer carrier 102 or wafer, and the corresponding distance between each position of the wafer carrier 102 and the heating component 101). Similarly, the second automatic adjustment component 130 is input with parameters based on the levelness of the wafer carrier 102 or wafer obtained by the levelness measuring component 112, and relevant process experience (e.g., the levelness of the wafer carrier 102, and the corresponding height difference between each position of the wafer carrier 102). This causes the second automatic adjustment component 130 to automatically adjust the levelness of the wafer carrier 102 via the heating component 101.

[0064] In this embodiment, the chuck device 10 is used to be disposed in the chamber of a semiconductor device. The chuck device 10 further includes: a first fixing component 140, which is fixed in the chamber and located below the heating component 101; a second power component 131 is fixedly connected to the first fixing component 140; and a second linear transmission component 132 passes through the first fixing component 140.

[0065] The second power component 131 is fixedly connected to the first fixed component 140, which facilitates the second linear transmission component 132 to move in a straight line in the vertical direction.

[0066] Furthermore, when the second power component 131 is fixedly connected to the first fixed component 140, the second linear transmission component 132 passes through the first fixed component 140, which helps to reduce the probability that the second linear transmission component 132 is limited by the first fixed component 140 in the vertical direction. Correspondingly, it also helps to increase the vertical range of motion of the second linear transmission component 132, thereby reducing the difficulty of adjusting the horizontal position of the bearing platform 100 by the second linear transmission component 132.

[0067] In this embodiment, there are multiple first automatic adjustment components 120 and multiple second automatic adjustment components 130. The projection patterns of the multiple first automatic adjustment components 120 and the projection patterns of the multiple second automatic adjustment components 130 on the bearing surface of the wafer carrier 102 are all evenly arranged around the center of the wafer carrier 102.

[0068] The presence of multiple first automatic adjustment components 120 reduces the difficulty of automatically adjusting the distance between the wafer carrier 102 and the heating element. Furthermore, the projection patterns of the multiple first automatic adjustment components 120 on the bearing surface of the wafer carrier 102 are uniformly arranged around the center of the wafer carrier 102, which improves the stability of the wafer carrier 102 and further reduces the difficulty of automatically adjusting the distance between the wafer carrier 102 and the heating element 101.

[0069] The presence of multiple second automatic adjustment components 130 reduces the difficulty of automatically adjusting the level of the wafer carrier 102. Furthermore, the fact that the projected patterns of the multiple second automatic adjustment components 130 on the bearing surface of the wafer carrier 102 are all uniformly arranged around the center of the wafer carrier 102 also helps improve the stability of the wafer carrier 102, thereby further reducing the difficulty of automatically adjusting the level of the wafer carrier 102 by the second automatic adjustment components 130.

[0070] Specifically, the projected patterns of the first automatic adjustment component 120 and the second automatic adjustment component 130 are located at different radius positions on the wafer carrier 102, which helps to reduce the mutual influence between setting the first automatic adjustment component 120 and setting the second automatic adjustment component 130. That is, when setting the first automatic adjustment component 120, there is no need to consider the position of the second automatic adjustment component 130 at the same radius position, and when setting the second automatic adjustment component 130, there is no need to consider the position of the first automatic adjustment component 120 at the same radius position.

[0071] In other embodiments, the projected patterns of the first and second automatic adjustment components are located at the same radius position on the wafer carrier.

[0072] More specifically, the projection pattern of the second automatic adjustment component 130 is located on the side of the projection pattern of the first automatic adjustment component 120 away from the center of the wafer carrier 102, which helps to increase the range of automatic adjustment of the level of the wafer carrier 102 by the second automatic adjustment component 130.

[0073] In this embodiment, the support platform 100 further includes a cooling component 103 disposed at the bottom of the heating component 101; the first power component 121 is fixed to the bottom of the cooling component 103.

[0074] The cooling component 103 is used to reduce the temperature of the first power component 121, thereby reducing the impact of the heating component 101 on the first power component 121, which in turn helps to improve the service life of the first power component 121.

[0075] Specifically, the cooling component 103 has a cooling pipe (not shown) for the flow of cooling medium, the cooling pipe including an inlet end (not shown) and an outlet end (not shown).

[0076] The cooling medium is beneficial for reducing the temperature of the first power component 121.

[0077] More specifically, the cooling medium is a coolant. As an example, the coolant is water.

[0078] Accordingly, this utility model embodiment also provides a laser annealing device. Figure 2 This is a schematic diagram of an embodiment of the chuck device and laser of this utility model. Figure 3 This is a top view of an embodiment of the laser annealing equipment of this utility model.

[0079] refer to Figure 2 and Figure 3 In this embodiment, the laser annealing device 1 includes: a chamber (such as...) Figure 3 (As shown) 11; the chuck device 10 of any embodiment of the present invention is located in the cavity; the laser 12 is located in the cavity 11 and above the wafer carrier 102 (as shown). Figure 2 (As shown).

[0080] The chamber 11 is a process chamber.

[0081] Because the temperature measuring component 111 can monitor the temperature of each measurement position of the wafer carrier 102 or the wafer after being heated by the heating component 101, and the first automatic adjustment component 120 can automatically adjust the distance between the wafer carrier 102 and the heating component 101 according to the temperature obtained by the temperature measuring component 111, it is beneficial to improve the convenience and real-time performance of calibrating the distance between the wafer carrier 102 and the heating component 101. Correspondingly, it is also beneficial to improve the convenience and real-time performance of calibrating the temperature uniformity of the wafer carrier 102. This ensures that after the heating component 101 heats the wafer carrier 102 or the wafer, and before the wafer is processed (e.g., laser annealing), the temperature uniformity of each area of ​​the wafer carrier 102 or the wafer is better, thereby ensuring better temperature uniformity of the wafer carrier during the processing. This, in turn, provides a better process foundation for subsequent wafer processing, resulting in better processing effects and improving the quality of wafer processing.

[0082] The second automatic adjustment component 130 can automatically adjust the level of the wafer carrier 102 through the heating component 101 based on the levelness obtained by the levelness measuring component 112, which improves the convenience and real-time performance of calibrating the levelness of the wafer carrier 102. Furthermore, the automatic adjustment component 130's ability to automatically adjust the levelness of the wafer carrier 102 ensures better uniformity of the vertical distance from the processing equipment to each region of the wafer during processing, thereby improving the quality of wafer processing. For example, during laser annealing, better uniformity of the vertical distance from the laser to each region of the wafer helps reduce the amplitude and probability of fluctuations in the laser's output power, which in turn improves the temperature uniformity of laser annealing in each region of the wafer, thus improving the quality of laser annealing.

[0083] Therefore, the first automatic adjustment component 120 can automatically adjust the distance between the wafer carrier 102 and the heating component 101 according to the temperature obtained by the temperature measuring component 111, and the second automatic adjustment component 130 can automatically adjust the level of the wafer carrier 102 according to the levelness obtained by the levelness measuring component 112. This is beneficial to improving the convenience and real-time performance of calibrating the wafer carrier 102. For example, the wafer carrier 102 can be calibrated before and after laser annealing of each wafer, so that the heating uniformity of each position of the wafer is better during laser annealing, which is beneficial to improving the quality of laser annealing of the wafer.

[0084] In this embodiment, the laser annealing equipment 1 further includes a second temperature measuring component (not shown), which is disposed on the same horizontal plane as the first temperature measuring component. The temperature measuring device is used to detect the temperature of the wafer 20 in real time when the laser 12 is working. In other embodiments, the second temperature measuring component may also be disposed at a different horizontal height than the first temperature measuring component.

[0085] As an example, the second temperature measuring component also includes a pyrometer.

[0086] It should be noted that the first temperature measuring component is used to acquire the temperature of various measurement locations on the wafer carrier 102 or test wafer after the heating component 101 heats the wafer carrier 102 and before the laser annealing process; the second temperature measuring component is used to acquire the temperature of various measurement locations on the wafer 20 during the laser annealing process of the wafer (e.g., a process wafer). Since the operating temperature of the heating component 101 is different from the operating temperature of the laser 12, the measuring ranges of the first and second temperature measuring components are correspondingly different.

[0087] In this embodiment, the laser annealing equipment 1 further includes: a preparation chamber 13, which is connected to the chamber 11 when transferring the wafer 20; a preheating device 14, located in the preparation chamber 13, which is used to preheat the wafer 20 before laser annealing; a cooling device 15, located in the preparation chamber 13 on the side of the preheating device 14, which is used to cool the wafer 20 after laser annealing; and a transfer device 16, located in the preparation chamber 13 and between the preheating device 14 and the cooling device 15, which is used to transfer the wafer.

[0088] For a detailed description of the chuck device 10 in the laser annealing equipment, please refer to the relevant records in the foregoing embodiments, which will not be repeated here.

[0089] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A chuck device, characterized in that, include: A carrier platform, comprising a heating element and a wafer carrier disk disposed on the heating element for supporting a wafer, wherein the spacing between the wafer carrier disk and the heating element is adjustable; Temperature measuring components are used to acquire the temperature at various measuring locations on the wafer carrier or wafer; A levelness measuring component is used to obtain the levelness of the wafer carrier or wafer; A first automatic adjustment component is located at the bottom of the wafer carrier. The first automatic adjustment component is used to automatically adjust the distance between the wafer carrier and the heating component according to the temperature obtained by the temperature measuring component. The second automatic adjustment component is located at the bottom of the heating component. The second automatic adjustment component is used to automatically adjust the level of the wafer carrier disk through the heating component based on the levelness obtained by the levelness measuring component.

2. The chuck device as described in claim 1, characterized in that, The number of the first automatic adjustment component and the second automatic adjustment component are both multiple, and the projection patterns of the multiple first automatic adjustment components on the bearing surface of the wafer carrier and the projection patterns of the second automatic adjustment components on the bearing surface of the wafer carrier are all evenly arranged around the center of the wafer carrier. The projected patterns of the first automatic adjustment component and the second automatic adjustment component are located at different radius positions on the wafer carrier, or the projected patterns of the first automatic adjustment component and the second automatic adjustment component are located at the same radius position on the wafer carrier.

3. The chuck device as described in claim 2, characterized in that, The projection pattern of the second automatic adjustment component is located on the side of the projection pattern of the first automatic adjustment component away from the center of the wafer carrier.

4. The chuck device as described in claim 1, characterized in that, The first automatic adjustment component includes: a first power component, fixed to the bottom of the support platform; and a first linear transmission component, passing through the heating component. One end of the first linear transmission component is connected to the first power component, and the other end abuts against the bottom of the wafer carrier. The first linear transmission component is used to drive the wafer carrier to move vertically toward or away from the heating component. The second automatic adjustment component includes: a second power component located below the heating component; and a second linear transmission component, one end of which is connected to the second power component and the other end of which abuts against the bottom of the support platform. The second linear transmission component is used to adjust the levelness of the wafer carrier.

5. The chuck device as described in claim 4, characterized in that, The first power component includes a first motor, which includes one or both of a stepper motor and a servo motor; The second power component includes a second motor, which includes one or both of a stepper motor and a servo motor.

6. The chuck device as described in claim 4 or 5, characterized in that, The chuck device further includes: a controller, the input terminal of which is coupled to the output terminal of the temperature measuring component and the output terminal of the levelness measuring component, and the output terminal of which is coupled to the input terminal of the first automatic adjustment component and the input terminal of the second automatic adjustment component, respectively. The controller is used to automatically adjust the distance between the wafer carrier and the heating component according to the temperature obtained by the temperature measuring component, and to automatically adjust the levelness of the wafer carrier through the heating component according to the levelness obtained by the levelness measuring component.

7. The chuck device as described in claim 4, characterized in that, The chuck device is used to be disposed in the chamber of a semiconductor device, and the chuck device further includes: a first fixing component for fixing in the chamber and located below the heating component; The second power component is fixedly connected to the first fixed component, and the second linear transmission component passes through the first fixed component.

8. The chuck device as described in claim 4, characterized in that, The support platform also includes a cooling component disposed at the bottom of the heating component; The first power component is fixed to the bottom of the cooling component.

9. The chuck device as described in claim 8, characterized in that, The cooling component has a cooling pipe for the flow of cooling medium, the cooling pipe having an inlet end and an outlet end.

10. The chuck device as claimed in claim 1, characterized in that, The chuck device is used to be installed in the chamber of the semiconductor device, and the temperature measuring component and the level measuring component are both used to be installed in the chamber and located above the bearing surface of the wafer carrier.

11. The chuck device as claimed in claim 10, characterized in that, The chuck device further includes: a second fixing component, used to fix it in the chamber and located above the bearing surface of the wafer carrier; The temperature measuring component and the levelness measuring component are fixedly connected to the same second fixed component.

12. The chuck device as claimed in claim 1, characterized in that, The levelness measuring component is a rangefinder, which includes a laser rangefinder.

13. The chuck device as claimed in claim 1 or 11, characterized in that, The support platform is a movable support platform that can move horizontally along a preset path.

14. A laser annealing apparatus, characterized in that, include: chamber; The chuck device as described in any one of claims 1 to 13 is located within the cavity; The laser is located inside the cavity and above the wafer carrier.

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