Single-tube packaging device and temperature detection system thereof

Abstract

The utility model discloses a single-tube packaging device and a temperature detection system thereof, and the single-tube packaging device comprises a power device which is provided with a heat conduction surface suitable for heat dissipation; the heat dissipation assembly comprises a first heat conduction layer, an insulating layer and a second heat conduction layer which are sequentially arranged in a stacked mode, and the first heat conduction layer is connected to the heat conduction face of the power device; the heat dissipation assembly further comprises a temperature sensor, and the temperature sensor is arranged on the insulating layer, so that the chip temperature of the power device can be timely and effectively detected.

Description

Technical Field

[0001] This utility model relates to the field of temperature detection technology, specifically to a single-tube packaged device and its temperature detection system. Background Technology

[0002] With the transformation of the global energy structure and the rapid development of power electronics technology, power devices such as IGBTs, MOSFETs, and SiC, as core components for energy conversion and transmission, have been widely used in many key fields such as photovoltaic inverters, smart grids, aerospace, and electric vehicles. These power devices provide strong support for the stable operation and performance optimization of modern energy systems through efficient power conversion and control. However, with the continuous advancement of power electronics technology, the power density of power devices is increasing, leading to a corresponding increase in heat generated during operation and increasing the risk of overheating failure. Overheating not only affects the performance and reliability of power devices but may also cause system failures or even safety accidents. Therefore, effective monitoring and control of the temperature of power devices is crucial.

[0003] In related technologies, there are certain limitations to temperature detection methods for single-transistor power devices. For example, estimating the chip temperature of a power device by installing a temperature sensor on a heat sink is not effective in predicting the chip's thermal risks due to the significant thermal resistance between the sensor and the chip. Similarly, while attaching a temperature sensor to the power device's casing allows for some detection of the chip temperature, this method is only suitable for experimental environments and is difficult to apply in real-world operation. Utility Model Content

[0004] One objective of this invention is to provide a single-tube packaged device that enables timely and effective temperature detection of power devices, thereby ensuring the stability of system operation.

[0005] To achieve at least one of the above objectives, the present invention provides the following technical solution: a single-tube packaged device, comprising: a power device having a thermally conductive surface suitable for heat dissipation; a heat dissipation assembly comprising a first thermally conductive layer, an insulating layer, and a second thermally conductive layer stacked sequentially, the first thermally conductive layer being connected to the thermally conductive surface of the power device; the heat dissipation assembly further comprising a temperature sensor disposed on the insulating layer to detect the chip temperature of the power device.

[0006] Preferably, the cross-section of the heat-conducting surface of the power device is consistent with the cross-section of the first heat-conducting layer, and the projection of the heat-conducting surface coincides with the projection of the first heat-conducting layer along the arrangement direction of the power device and the heat dissipation assembly.

[0007] Preferably, the cross-sections of the insulating layer and the second thermally conductive layer are both larger than the cross-section of the first thermally conductive layer. The cross-sections of the insulating layer and the second thermally conductive layer are the same. Along the arrangement direction of the power device and the heat dissipation assembly, the projection of the first thermally conductive layer falls in the middle of the projection of the insulating layer, and the projection of the insulating layer coincides with the projection of the second thermally conductive layer.

[0008] As a preferred embodiment, the temperature sensor and the first thermally conductive layer are disposed on the same side of the insulating layer.

[0009] As a preferred embodiment, the first thermally conductive layer and the second thermally conductive layer are at least one of a metal layer, a graphite layer, and a graphene layer.

[0010] As a preferred embodiment, the temperature sensor is an NTC thermistor.

[0011] As a preferred embodiment, the insulating layer is a ceramic plate, and the temperature sensor is welded to the insulating layer, or the temperature sensor and the insulating layer are sintered together.

[0012] As a preferred embodiment, when the single-tube packaged device is mounted on a heat sink, thermally conductive silicone grease is provided between the second thermally conductive layer and the heat sink.

[0013] To achieve at least one of the above objectives, the present invention also provides a temperature detection system, comprising: a plurality of power devices; at least one heat dissipation component, each of the heat dissipation components being connected to a corresponding power device to form a single-tube packaged device as described above, wherein at least one heat dissipation component is connected to the power device most prone to overheating; and a processing unit connected to a temperature sensor of the heat dissipation component, wherein the processing unit receives a temperature signal returned by the temperature sensor and converts the temperature signal into the chip temperature of the power device.

[0014] Preferably, the processing unit converts the temperature signal into a sensor temperature, and the processing unit has sensor temperature-chip temperature relationship data, which enables the sensor temperature to be converted into the chip temperature of the power device.

[0015] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0016] The power device is connected to the first thermally conductive layer of the heat dissipation component, enabling the power device and the heat dissipation component to be integrated into a single design. The temperature sensor is placed in the insulating layer of the heat dissipation component, allowing for more timely and effective detection of the chip temperature of the power device. Attached Figure Description

[0017] Figure 1 This is a three-dimensional structural diagram of a single-tube packaged device disposed on a heat sink according to some embodiments of this application.

[0018] Figure 2 for Figure 1 Enlarged view of section A.

[0019] Figure 3 This is a schematic diagram of a temperature detection system according to some embodiments of this application.

[0020] Figure 4 This is a schematic diagram of a temperature detection system according to some other embodiments of this application.

[0021] In the figure: 10, single-tube packaged device; 11, power device; 111, thermally conductive surface; 12, heat dissipation assembly; 121, first thermally conductive layer; 122, insulating layer; 123, second thermally conductive layer; 124, temperature sensor; 20, heat sink; 30, temperature detection system; 31, processing unit. Detailed Implementation

[0022] The present invention will be further described below with reference to specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0023] In the description of this utility model, it should be noted that the directional terms such as "center", "lateral", "longitudinal", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", and "counterclockwise" are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. They should not be construed as limiting the specific protection scope of this utility model.

[0024] It should be noted that the terms "first," "second," etc., in the specification and claims of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0025] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection, a contact connection, or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0026] A single-tube packaged device 10, such as Figure 1 and Figure 2 As shown, the device includes a power device 11 and a heat dissipation assembly 12. The power device 11 has a thermally conductive surface 111 suitable for heat dissipation. The heat dissipation assembly 12 includes a first thermally conductive layer 121, an insulating layer 122, and a second thermally conductive layer 123 stacked sequentially. The first thermally conductive layer 121 is connected to the thermally conductive surface 111 of the power device 11, enabling the power device 11 and the heat dissipation assembly 12 to be integrated into a single design. The heat dissipation assembly 12 also includes a temperature sensor 124, which is disposed on the insulating layer 122, allowing for more timely and effective detection of the chip temperature of the power device 11. Furthermore, the power device 11 and the heat dissipation assembly 12 have a simple structure, which helps to reduce manufacturing difficulty and production costs.

[0027] In some embodiments, such as Figure 2 As shown, the cross-section of the heat-conducting surface 111 of the power device 11 is consistent with the cross-section of the first heat-conducting layer 121. Along the arrangement direction of the power device 11 and the heat dissipation assembly 12, the projection of the heat-conducting surface 111 coincides with the projection of the first heat-conducting layer 121. That is, when the first heat-conducting layer 121 is connected to the heat-conducting surface 111, the first heat-conducting layer 121 coincides with the heat-conducting surface 111.

[0028] It is understandable that if the cross-section of the first thermally conductive layer 121 is smaller than that of the thermally conductive surface 111, the thermal resistance of the first thermally conductive layer 121 may increase, making it difficult for the heat of the power device 11 to be efficiently transferred to the outside through the heat dissipation component 12, thereby increasing the risk of over-temperature failure of the power device 11. If the cross-section of the first thermally conductive layer 121 is larger than that of the thermally conductive surface 111, the heat will mainly be concentrated in the area where the thermally conductive surface 111 contacts the first thermally conductive layer 121. Consequently, the underutilized area on the first thermally conductive layer 121 may reduce the overall heat dissipation efficiency of the single-tube packaged device 10, affecting the long-term stability of the single-tube packaged device 10.

[0029] In this embodiment, the first thermally conductive layer 121 overlaps with the thermally conductive surface 111, which reduces thermal resistance, improves the accuracy of the temperature sensor 124 in detecting the chip temperature, and enables effective heat dissipation of the power device 11, reducing the risk of overheating failure of the single-tube package device 10. Furthermore, the overlap between the first thermally conductive layer 121 and the thermally conductive surface 111 also facilitates a more compact structure for the single-tube package device 10, reducing its size and enabling miniaturized design.

[0030] In some embodiments, such as Figure 2 As shown, the cross-sections of the insulating layer 122 and the second heat-conducting layer 123 are both larger than the cross-section of the first heat-conducting layer 121. The cross-sections of the insulating layer 122 and the second heat-conducting layer 123 are identical. Along the arrangement direction of the power device 11 and the heat dissipation assembly 12, the projection of the first heat-conducting layer 121 falls in the middle of the projection of the insulating layer 122, and the projection of the insulating layer 122 coincides with the projection of the second heat-conducting layer 123. That is, under the condition that the first heat-conducting layer 121, the insulating layer 122, and the second heat-conducting layer 123 are sequentially stacked and connected, the first heat-conducting layer 121 is located in the middle region of the insulating layer 122, and the insulating layer 122 coincides with the second heat-conducting layer 123. It is worth mentioning that, depending on the actual operating environment, the power device 11 and the first heat-conducting layer 121 can also be arranged close to the side or corner of the insulating layer 122, and this application does not impose specific restrictions on this.

[0031] It should be understood that the cross-section of the second thermal conductive layer 123 is larger than that of the first thermal conductive layer 121, so that the second thermal conductive layer 123 can provide a larger heat dissipation area, thereby improving the heat dissipation efficiency of the heat dissipation component 12 and enhancing the heat dissipation performance of the single tube package device 10, which is beneficial to improving the stability of the single tube package device 10 under high power conditions.

[0032] Furthermore, the cross-section of the insulating layer 122 coincides with the cross-section of the second thermally conductive layer 123 and is larger than the cross-section of the first thermally conductive layer 121, so that the insulating layer 122 can provide reliable electrical isolation, which helps to avoid the risk of leakage or short circuit in the single-tube packaged device 10, thereby improving the safety of the single-tube packaged device 10 under high voltage conditions.

[0033] In some embodiments, such as Figure 2 As shown, the temperature sensor 124 and the first thermally conductive layer 121 are disposed on the same side of the insulating layer 122. That is, the temperature sensor 124 and the power device 11 are disposed on the side of the insulating layer 122 opposite to the second thermally conductive layer 123, thereby making the structure of the single-tube packaged device 10 more compact, which is beneficial to reducing the height and volume of the single-tube packaged device 10 and realizing the miniaturization design of the single-tube packaged device 10.

[0034] It should be understood that, compared to when the temperature sensor 124 and the first thermally conductive layer 121 are disposed on opposite sides of the insulating layer 122, in this embodiment, the temperature sensor 124 and the first thermally conductive layer 121 are disposed on the same side of the insulating layer 122. The heat from the power device 11 is conducted to the insulating layer 122 through the first thermally conductive layer 121 and can be detected by the temperature sensor 124 more quickly. In other words, this shortens the heat conduction path and thus improves the thermal response speed. It is worth mentioning that disposing the power device 11 and the temperature sensor 124 on the same side of the insulating layer 122 reduces the number of connection lines and interfaces that need to cross the insulating layer 122, which simplifies the insulation design, reduces the complexity of the single-tube packaged device 10, and improves the reliability of the single-tube packaged device 10.

[0035] In some embodiments, the first thermally conductive layer 121 and the second thermally conductive layer 123 are at least one of a metal layer, a graphite layer, and a graphene layer. That is, the materials of the first thermally conductive layer 121 and the second thermally conductive layer 123 can be independently selected from one of a metal, graphite, and graphene, thereby improving the heat dissipation efficiency of the heat dissipation component 12 and enhancing the heat dissipation performance of the single-tube packaged device 10, which is beneficial for the power device 11 to operate within the normal temperature range.

[0036] In some embodiments, the thermally conductive surface 111 is a metal surface, the first thermally conductive layer 121 is a metal layer, and the thermally conductive surface 111 and the first thermally conductive layer 121 are welded together, so that the power device 11 and the heat dissipation assembly 12 can be reliably connected, improving the structural strength and structural reliability of the single-tube package device 10, and also helping to improve the efficiency and reliability of heat conduction between the thermally conductive surface 111 and the first thermally conductive layer 121.

[0037] In at least one embodiment, the first thermally conductive layer 121 is implemented as a copper sheet so that the heat of the chip of the power device 11 can be transferred to the heat dissipation assembly 12 more quickly through the first thermally conductive layer 121, thereby helping to avoid the power device 11 from overheating and failing.

[0038] In some embodiments, the temperature sensor 124 is an NTC thermistor. It should be understood that NTC thermistors have high sensitivity, enabling them to quickly detect minute changes in the chip temperature of the power device 11, thus facilitating timely and effective feedback of the chip temperature of the power device 11. Furthermore, NTC thermistors are easier to integrate with other electronic devices such as the power device 11, which helps reduce the design and manufacturing complexity of the single-tube package device 10. It is worth noting that the temperature sensor 124 can also be a PTC thermistor, a ceramic thermistor, or a thin-film thermistor, etc., and this application does not impose specific limitations in this regard.

[0039] In some embodiments, the insulating layer 122 is a ceramic plate, and the temperature sensor 124 is welded to the insulating layer 122, or the temperature sensor 124 and the insulating layer 122 are sintered together.

[0040] It should be understood that the insulating layer 122 is implemented as a ceramic material, which has both good insulation properties, which helps to block current flow and play a role in electrical isolation, reducing the risk of leakage and short circuit in the single-tube packaged device 10; and good heat resistance, which helps to maintain insulation in high-temperature environments, thereby improving the reliability of the single-tube packaged device 10 and making the single-tube packaged device 10 have a wider range of applications. In at least one embodiment, the insulating layer 122 is implemented as a DBC ceramic substrate (Direct Bonded Copper Ceramic), so that the insulating layer 122 has both high thermal conductivity and high insulation properties.

[0041] It is worth mentioning that, under the condition that the temperature sensor 124 is implemented as an NTC thermistor and the insulating layer 122 is implemented as a ceramic material, the temperature sensor 124 and the insulating layer 122 can be welded or sintered together to ensure a reliable connection between the temperature sensor 124 and the insulating layer 122.

[0042] In at least one embodiment, the temperature sensor 124 and the insulating layer 122 are soldered together by reflow soldering, which helps to reduce the thermal shock to the temperature sensor 124 and the insulating layer 122 and improve the strength of the solder joint between the temperature sensor 124 and the insulating layer 122. Furthermore, since the reflow soldering process is relatively mature, it helps to reduce the production difficulty and production cost of the single-tube packaged device 10, and improve the production efficiency of the single-tube packaged device 10, which is conducive to realizing the large-scale production of the single-tube packaged device 10.

[0043] In at least one embodiment, the sintering connection between the temperature sensor 124 and the insulating layer 122 facilitates the formation of a strong physical and chemical bond between them, improves the thermal stability of the connection point, and makes the single-tube packaged device 10 more suitable for use in high-temperature environments. Furthermore, the sintering connection facilitates the integration of the temperature sensor 124 and the insulating layer 122, reducing the risk of phase delamination and detachment between them. In addition, the sintering process also helps to optimize the microstructure of the temperature sensor 124.

[0044] In some embodiments, the power device 11 includes, but is not limited to, IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), SCR (Silicon Controlled Rectifier), TRIAC (Riode for Alternating Current), BJT (Bipolar Junction Transistor), GTO (Gate Turn-Off Thyristor), SIT (Static Induction Transistor), SITH (Static Induction Thyristor), and DIAC (Diode for Alternating Current). This application does not impose specific limitations on these.

[0045] In some embodiments, when the single-tube packaged device 10 is mounted on the heat sink 20, thermally conductive grease is disposed between the second thermally conductive layer 123 and the heat sink 20, which fixes the single-tube packaged device 10 to the heat sink 20 and helps to improve the heat dissipation efficiency between the second thermally conductive layer 123 and the heat sink 20, further reducing the risk of over-temperature failure of the power device 11. It is worth mentioning that a thermally conductive sheet or thermally conductive adhesive may also be disposed between the second thermally conductive layer 123 and the heat sink 20, and this application does not impose specific limitations on this.

[0046] A temperature detection system 30, such as Figure 3 and Figure 4 As shown, the device includes: several power devices 11, at least one heat dissipation component 12, and a processing unit 31. Each heat dissipation component 12 is connected to a corresponding power device 11 to form the single-tube packaged device 10 described above. At least one heat dissipation component 12 is connected to the power device 11 most prone to overheating. The processing unit 31 is connected to a temperature sensor 124 of the heat dissipation component 12. The processing unit 31 receives the temperature signal returned by the temperature sensor 124 and converts the temperature signal into the chip temperature of the power device 11. The power devices 11 most prone to overheating include, but are not limited to: power devices operating under high load, power devices with high switching frequencies, power devices with poor heat dissipation, and power devices with high ambient temperatures. The power device 11 requiring the heat dissipation component 12 can be selected according to the actual operating conditions; this application does not impose specific limitations in this regard.

[0047] In at least one embodiment, such as Figure 3 As shown, the temperature detection system 30 includes several power devices 11 and a heat dissipation component 12. The heat dissipation component 12 is connected to the power device 11 that is most prone to overheating to form the single-tube packaged device 10 described above. By detecting the temperature of the power device 11 that is most prone to overheating, it is possible to determine whether the temperatures of other power devices 11 are normal. This helps to reduce the complexity of the temperature detection system 30 and reduce its cost.

[0048] In at least one embodiment, the temperature detection system 30 includes a plurality of power devices 11 and a plurality of heat dissipation components 12, wherein the number of heat dissipation components 12 is less than the number of power devices 11. The heat dissipation components 12 are connected to some of the power devices 11 to form the single-tube packaged device 10 described above. For example, the heat dissipation components 12 are connected to some of the power devices 11 that have a greater risk of over-temperature failure, which is beneficial to both reducing the cost of the temperature detection system 30 and improving the reliability of the temperature detection system 30.

[0049] In at least one embodiment, such as Figure 4 As shown, each power device 11 of the temperature detection system 30 is connected to a heat dissipation component 12 to form the single-tube packaged device 10 described above, thereby enabling temperature detection of each power device 11, which helps to further improve the reliability of the temperature detection system 30 and reduce the risk of over-temperature failure of the power device 11.

[0050] In some embodiments, the processing unit 31 converts the temperature signal into a sensor temperature. The processing unit 31 possesses sensor temperature-chip temperature relationship data, enabling it to convert the sensor temperature into the chip temperature of the power device 11. That is, the processing unit 31 converts the temperature signal returned by the temperature sensor 124 into a sensor temperature, and then queries the sensor temperature-chip temperature relationship data in the processing unit 31 to obtain the chip temperature of the power device 11, thereby detecting the chip temperature of the power device 11. It should be understood that the sensor temperature-chip temperature relationship data includes, but is not limited to, sensor temperature-chip temperature curves, sensor temperature-chip temperature lookup tables, etc., and this application does not impose specific limitations on this.

[0051] In at least one embodiment, the sensor temperature-chip temperature relationship data is obtained using the thermistor parameter method. Specifically, a small test current is used to obtain the temperature coefficient of the power device under test 11, thereby obtaining the relationship between the forward voltage and the chip temperature of the power device 11. Under the actual operating conditions of the single-tube packaged device 10, the large current is cut off, and a small test current is applied to the power device 11 to obtain the forward voltage, thereby obtaining the chip temperature of the power device 11; simultaneously, the sensor temperature of the temperature sensor 124 is collected. After performing multiple sets of test conditions, the sensor temperature-chip temperature relationship data is obtained. It should be understood that the sensor temperature-chip temperature relationship data is related to the cooling method of the single-tube packaged device 10 in the actual application scenario. The temperature difference between the sensor temperature and the chip temperature increases with the improvement of cooling performance; therefore, it is necessary to obtain the sensor temperature-chip temperature relationship data according to the actual application scenario.

[0052] It is worth mentioning that the sensor temperature-chip temperature relationship data can also be obtained through contact detection, which is beneficial for improving the accuracy of the sensor temperature-chip temperature relationship data and is simple to operate. Alternatively, the sensor temperature-chip temperature relationship data can also be obtained through finite element method calculation, which is beneficial for simulating the actual operating environment of the single-tube packaged device 10 by combining multiple factors, thereby improving the accuracy of the sensor temperature-chip temperature relationship data. Alternatively, the sensor temperature-chip temperature relationship data can also be obtained through thermal network method, which is beneficial for improving efficiency and quickly estimating the sensor temperature-chip temperature relationship data, facilitating the optimization of the single-tube packaged device 10 and the overall system. This application does not impose specific restrictions on the method of obtaining the sensor temperature-chip temperature relationship data.

[0053] The basic principles, main features, and advantages of this utility model have been described above. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A single-tube packaged device, characterized in that, include: A power device having a heat-conducting surface suitable for heat dissipation; The heat dissipation assembly includes a first thermally conductive layer, an insulating layer, and a second thermally conductive layer stacked sequentially, wherein the first thermally conductive layer is connected to the thermally conductive surface of the power device; the heat dissipation assembly also includes a temperature sensor disposed on the insulating layer to detect the chip temperature of the power device.

2. The single-tube packaged device according to claim 1, characterized in that, The cross-section of the heat-conducting surface of the power device is consistent with the cross-section of the first heat-conducting layer, and the projection of the heat-conducting surface coincides with the projection of the first heat-conducting layer along the arrangement direction of the power device and the heat dissipation assembly.

3. The single-tube packaged device according to claim 2, characterized in that, The cross-sections of the insulating layer and the second thermal conductive layer are both larger than the cross-section of the first thermal conductive layer. The cross-sections of the insulating layer and the second thermal conductive layer are the same. Along the arrangement direction of the power device and the heat dissipation assembly, the projection of the first thermal conductive layer falls in the middle of the projection of the insulating layer, and the projection of the insulating layer coincides with the projection of the second thermal conductive layer.

4. The single-tube packaged device according to claim 3, characterized in that, The temperature sensor and the first thermally conductive layer are disposed on the same side of the insulating layer.

5. The single-tube packaged device according to claim 1, characterized in that, The first thermally conductive layer and the second thermally conductive layer are at least one of a metal layer, a graphite layer, and a graphene layer.

6. The single-tube packaged device according to claim 1, characterized in that, The temperature sensor is an NTC thermistor.

7. The single-tube packaged device according to claim 1, characterized in that, The insulating layer is a ceramic plate, and the temperature sensor is welded to the insulating layer, or the temperature sensor is sintered to the insulating layer.

8. The single-tube packaged device according to any one of claims 1-7, characterized in that, When the single-tube packaged device is mounted on a heat sink, thermally conductive grease is provided between the second thermally conductive layer and the heat sink.

9. A temperature detection system, characterized in that, include: Several power devices; At least one heat dissipation component, each of the heat dissipation components being connected to a corresponding power device to form a single-tube packaged device as described in any one of claims 1-8, wherein at least one of the heat dissipation components is connected to the power device most prone to overheating; The processing unit is connected to the temperature sensor of the heat dissipation component. The processing unit can receive the temperature signal returned by the temperature sensor and convert the temperature signal into the chip temperature of the power device.

10. The temperature detection system according to claim 9, characterized in that, The processing unit converts the temperature signal into a sensor temperature. The processing unit has sensor temperature-chip temperature relationship data, which enables the sensor temperature to be converted into the chip temperature of the power device.

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