Grinding disc and semiconductor grinding equipment
By setting multiple grinding structures and plunger structures on the grinding disc, uniform grinding force is achieved, solving the problem of thickness difference caused by uneven grinding, improving the flatness of the product and reducing the risk of scratches.
Patent Information
- Application Number
- CN202520466117.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-17
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2035-03-17
AI Technical Summary
The existing planar structure of the grinding disc leads to uneven grinding, resulting in uneven thickness of the grinding pad at the end of its use, which affects the flatness of the product.
The grinding disc has multiple grinding structures on the side facing the grinding pad. The top of each grinding structure is a rounded polished surface, and the bottom is connected to a plunger structure, which can adaptively adjust according to the thickness difference of the grinding pad to ensure uniform grinding force.
It effectively avoids thickness differences caused by uneven polishing, improves the flatness of the product, and reduces the risk of scratches on the product surface by hard objects.
Smart Images
Figure CN223848955U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a grinding disc and a semiconductor grinding device. BACKGROUND
[0002] In the current semiconductor manufacturing process, chemical mechanical grinding technology as a key manufacturing process has an important influence on the flatness and quality of the wafer surface. With the rapid development of semiconductor technology, the flatness and precision of the wafer are increasingly required.
[0003] At present, the grinding disc on the grinding pad adjuster used in the chemical mechanical grinding process is a whole flat structure. In actual operation, when hard objects are stuck in the grinding pad groove, these hard objects will be ground by the grinding disc to be flat with the grinding pad, so that when the product is ground, the hard objects will contact the surface of the product, causing obvious scratches. In addition, as the grinding process continues, due to the uneven grinding of the grinding disc on the grinding pad, the grinding pad has uneven thickness at the end of use. With the passage of time, this thickness difference will gradually increase, eventually having a serious impact on the flatness of the product.
[0004] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present application, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. CONTENT OF THE INVENTION
[0005] Based on this, the present application provides a grinding disc and a semiconductor grinding device, which can effectively avoid the thickness difference caused by uneven grinding, and is beneficial to improve the flatness of the product.
[0006] According to some embodiments, the present application provides a grinding disc for a grinding pad adjuster of a semiconductor grinding device, wherein one side of the grinding disc facing the grinding pad is provided with a plurality of grinding structures, and the grinding structure includes a top portion facing the grinding pad and a bottom portion opposite to the top portion.
[0007] The top portion of the grinding structure has a circular arc polishing surface, and the bottom portion of the grinding structure is connected with a plunger structure, and the plunger structure is arranged in the thickness direction of the grinding disc.
[0008] In some embodiments, the diameter of the grinding structure ranges from 3mm to 6mm.
[0009] In some embodiments, the sum of the lengths of the plunger structure and the grinding structure in the thickness direction of the grinding disc is between 4mm and 6mm.
[0010] In some embodiments, the number of grinding structures ranges from 200 to 300.
[0011] In some embodiments, the plurality of grinding structures are evenly distributed on the side of the grinding plate facing the polishing pad.
[0012] In some embodiments, the distance between any two adjacent grinding structures ranges from 1mm to 3mm.
[0013] In some embodiments, the grinding structure closest to the edge of the grinding plate among the plurality of grinding structures has a minimum distance to the edge of the grinding plate ranging from 1mm to 3mm.
[0014] In some embodiments, the circular arc polishing surface is the surface of a ¼ sphere, and the diameter of the sphere is the same as the diameter of the grinding structure.
[0015] In some embodiments, the plunger structure comprises a spring.
[0016] According to some embodiments, another aspect of the present application further provides a semiconductor grinding device, comprising:
[0017] a polishing pad;
[0018] a polishing pad adjuster arranged above the polishing pad, wherein the polishing pad adjuster comprises the grinding plate provided in the foregoing embodiments.
[0019] The grinding plate and the semiconductor grinding device provided by the present application can / at least have the following advantages:
[0020] In the present application, the top of the grinding structure is provided with a circular arc polishing surface. In the grinding process, the top of the grinding structure is in contact with the polishing pad. Due to the design of the circular arc polishing surface, when the grinding plate grinds the polishing pad, the groove can be ground to a position lower than the plane of the polishing pad, forming a depression. This depression makes the product surface not directly contact with the hard object in the groove in the subsequent grinding process, but only contact with the flat part of the polishing pad, thereby effectively avoiding the hard object scratching the product surface.
[0021] Meanwhile, the plunger structure connecting the bottom of the grinding structure can rebound up and down along the thickness direction of the grinding disc. During the grinding process, each grinding structure can be self-adaptively adjusted according to the thickness difference of different positions of the grinding pad by the elastic effect of the plunger structure. For example, when a certain position of the grinding pad is relatively thin, the plunger structure can pop out an appropriate length due to the elastic effect, so that the force of the grinding disc on the position is reduced; and when a certain position of the grinding pad is relatively thick, the plunger structure will be correspondingly contracted, so that the force of the grinding disc on the position is increased. In this way, each grinding structure can independently adjust the force according to the local thickness condition, so that the force of the grinding disc on the grinding pad is completely uniform on the entire surface. During the grinding process, the polishing force of each part of the grinding pad is basically consistent, thereby effectively avoiding the thickness difference caused by uneven polishing, and being beneficial to improving the flatness of the product.
[0022] Other advantages, objects, and features of the present application will be better understood from the following detailed description when read in connection with the accompanying drawings. The goals and other advantages of the present application can be achieved and obtained by the following description. BRIEF DESCRIPTION OF DRAWINGS
[0023] Other features, objects, and advantages of the present application will become more apparent from the following detailed description of non-limiting embodiments when read in connection with the accompanying drawings.
[0024] Figure 1 is a side structure schematic diagram of a grinding pad in some embodiments of the present application;
[0025] Figure 2 is a front structure schematic diagram of a grinding disc in some embodiments of the present application;
[0026] Figure 3 is a side structure schematic diagram of a grinding disc and a grinding pad in some embodiments of the present application;
[0027] Figure 4 is a side structure schematic diagram of a grinding pad after polishing in some embodiments of the present application;
[0028] Figure 5 is a side structure schematic diagram of a grinding disc in the grinding process in some embodiments of the present application;
[0029] Figure 6 is a side structure schematic diagram of a plurality of grinding structures in some embodiments of the present application;
[0030] Figure 7 is a side structure schematic diagram of a grinding disc in some embodiments of the present application.
[0031] Figure label:
[0032] 10 Grinding discs
[0033] 110 Grinding Structure 110a Arc Polished Surface
[0034] 111 Plunger structure 112 Sealing ring
[0035] 113 Abrasive particles
[0036] 20 Grinding Pads
[0037] 20a Groove 20b Hard object Detailed Implementation
[0038] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0040] While terms such as "above," "between," etc., may be used in this specification to describe different exemplary features and elements of this application, these terms are used herein for convenience only, such as the orientation of the examples described in the accompanying drawings. Nothing in this specification should be construed as requiring a specific three-dimensional orientation of the structure to fall within the scope of this application. Furthermore, the illustrations provided in this embodiment are merely schematic representations of the basic concept of this disclosure. Although the illustrations only show components relevant to this disclosure and are not drawn according to the actual number, shape, and size of components in implementation, the type, quantity, and proportion of each component in actual implementation may be arbitrarily changed, and the component layout may also be more complex.
[0041] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, element, and / or part is established, but the presence or addition of one or more other features, integers, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.
[0042] In view of the deficiencies in the related art, the present application provides a grinding disc and a semiconductor grinding device, which can effectively avoid thickness differences caused by uneven polishing and improve the flatness of the product. The details will be described in the subsequent embodiments.
[0043] According to some embodiments, the present application provides a grinding disc for a grinding pad adjuster of a semiconductor grinding device.
[0044] As shown in Figure 1 The grinding pad 20 is taken as an example. During the chemical mechanical polishing (CMP) process, the wafer surface is in contact with the grinding pad 20, and the grinding pad 20 is polished by the grinding disc under the action of the grinding pad adjuster. In actual operation, when the hard object 20b is stuck in the grinding pad groove 20a, the hard object 20b will be polished to be flush with the grinding pad 20 by the grinding disc, so that the hard object 20b will contact the product surface when the product is ground, causing obvious scratches.
[0045] Please refer to Figure 2 The grinding disc 10 provided by the present application is provided with a plurality of grinding structures 110 on the side facing the grinding pad 20. The grinding structure 110 includes a top portion facing the grinding pad 20 and a bottom portion opposite to the top portion.
[0046] Please refer to Figure 3 The top portion of the grinding structure 110 has a circular arc polishing surface 110a, and the bottom portion of the grinding structure 110 is connected with a plunger structure 111, which extends along the thickness direction of the grinding disc 10.
[0047] The present application sets the top portion of the grinding structure 110 as a circular arc polishing surface 110a. In the grinding process, the top portion of the grinding structure 110 is in contact with the grinding pad 20. Due to the design of the circular arc polishing surface 110a, when the grinding disc 10 polishes the grinding pad 20, as shown in Figure 4 , the position below the plane of the grinding pad 20 can be polished at the groove 20a, forming a depression. This depression makes the product surface not directly contact the hard object 20b in the groove 20a in the subsequent grinding process, but only contact the flat part of the grinding pad 20, thereby effectively avoiding scratches on the product surface caused by the hard object 20b.
[0048] At the same time, as shown in Figure 5As shown, the plunger structure 111 at the bottom of the grinding structure 110 can rebound up and down along the thickness direction of the grinding disc 10. During the grinding process, each grinding structure 110 can be self-adaptively adjusted according to the thickness difference of different positions of the grinding pad 20 through the elastic effect of the plunger structure 111. For example, when a certain position of the grinding pad 20 is relatively thin, the plunger structure 111 can pop out an appropriate length due to the elastic effect, so that the force of the grinding disc 10 on the position is reduced; and when a certain position of the grinding pad 20 is relatively thick, the plunger structure 111 will be correspondingly contracted, so that the force of the grinding disc 10 on the position is increased. In this way, each grinding structure 110 can independently adjust the force according to the local thickness condition, so that the force of the grinding disc 10 on the grinding pad 20 is completely uniform on the entire surface. During the grinding process, the polishing force of each part of the grinding pad 20 is basically consistent, thereby effectively avoiding the thickness difference caused by uneven polishing, and being beneficial to improving the flatness of the product.
[0049] The specific form of the plunger structure 111 is not limited in the embodiments of the present application. In some embodiments, as shown in Figure 3 and Figure 5 the plunger structure 111 can include a spring.
[0050] The specific diameter of the grinding structure 110 is not limited in the embodiments of the present application. In some embodiments, the diameter of the grinding structure 110 ranges from 3 mm to 6 mm, for example, the diameter of the grinding structure 110 can be 3 mm, 4 mm, 5 mm or 6 mm, etc.
[0051] The grinding structure 110 with a diameter ranging from 3 mm to 6 mm can make the contact area of the arc polishing surface 110a at the top thereof and the grinding pad groove 20a moderate, so that in the process of polishing the hard object 20b in the groove 20a to be lower than the plane of the grinding pad 20 to form a depression, the polishing is not insufficient or the depth of the depression is insufficient due to the excessive contact area, thereby effectively avoiding the contact between the hard object 20b in the groove 20a and the surface of the product, and reducing the risk of scratching.
[0052] The sum of the lengths of the plunger structure 111 and the grinding structure 110 in the thickness direction of the grinding disc 10 is not limited in the embodiments of the present application. In some embodiments, the sum of the lengths of the plunger structure 111 and the grinding structure 110 in the thickness direction of the grinding disc 10 is between 4 mm and 6 mm, for example, the sum of the lengths of the two can be 4 mm, 5 mm or 6 mm, etc.
[0053] The sum of the lengths of the plunger structure 111 and the grinding structure 110 between 4 mm and 6 mm can cooperate with the elastic deformation of the plunger structure 111 to meet the adjustment requirement of the thickness difference of different positions of the grinding pad 20, thereby effectively controlling the thickness difference of the grinding pad 20 and reducing the thickness difference.
[0054] In some embodiments, the number of abrasive structures 110 ranges from 200 to 300, but is not limited thereto. The 200 to 300 abrasive structures 110 enable the polishing pad 10 to have sufficient density on the surface of the polishing pad 20 to polish different positions of the polishing pad 20 sufficiently. Each abrasive structure 110 is precisely adjusted in pressure according to the thickness difference of different positions of the polishing pad 20 by the elasticity of the plunger structure 111, and the large number (200 to 300) of abrasive structures 110 can make the pressure distribution more precise, further reduce the thickness difference, and improve the flatness of the product.
[0055] For example, the plurality of abrasive structures 110 can be evenly distributed on the side of the polishing pad 10 facing the polishing pad 20. Because the abrasive structures 110 are evenly distributed, the plunger structures 111 are also evenly distributed, thereby helping to make more precise pressure adjustment according to the thickness difference of different positions of the polishing pad 20, and polishing the polishing pad 20 more carefully and uniformly, further reducing the thickness difference, and improving the flatness of the product.
[0056] The present application does not limit the specific spacing between the abrasive structures 110. Please refer to Figure 6 It is understood that, in some embodiments, the spacing d between any two adjacent abrasive structures 110 ranges from 1 mm to 3 mm, for example, the spacing d between any two adjacent abrasive structures 110 can be 1 mm, 2 mm, or 3 mm, and the like.
[0057] For example, the plurality of abrasive structures 110 can be evenly distributed on the side of the polishing pad 10 facing the polishing pad 20 according to the spacing requirements in the above embodiments.
[0058] In some embodiments, the minimum distance between the abrasive structure 110 closest to the edge of the polishing pad 10 and the edge of the polishing pad 10 ranges from 1 mm to 3 mm, for example, the minimum distance between the abrasive structure 110 closest to the edge of the polishing pad 10 and the edge of the polishing pad 10 can be 1 mm, 2 mm, or 3 mm, and the like.
[0059] Please refer to Figure 7 In some embodiments, the circular arc polishing surface 110a can be the surface of a 1 / 4 sphere, thereby helping to polish the hard object 20b in the groove 20a better during the polishing process, so that the hard object 20b is below the plane of the polishing pad 20, and the depth of the depression can reach 0.1 mm, ensuring that the hard object 20b will not scratch the product surface.
[0060] In the above embodiments, the diameter of the sphere is the same as the diameter of the abrasive structure 110.
[0061] In some embodiments, as shown in FIG. 1, the polishing structures 110 are provided with a sealing ring 112 between the polishing structures 110 and the body of the polishing plate 10. During the polishing process, each polishing structure 110 is resiliently moved up and down along the thickness direction of the polishing plate 10 by the elastic action of the plunger structure 111, and the up-and-down movement space of each polishing structure 110 is limited by the sealing ring 112 and cannot exceed the range of the sealing ring 112. Figure 3
[0062] In addition, the material of the abrasive particles on the arc polishing surface 110a is not specifically limited in the embodiments of the present application, and the selection of the abrasive particles depends on the specific CMP process requirements, the characteristics of the processed material, and cost considerations, etc. For example Figure 3 As shown in FIG. 1, the abrasive particles 113 on the arc polishing surface 110a can include diamond abrasive particles.
[0063] The material of the plunger structure 111 and the polishing plate 10 can be a hard metal or plastic material that is resistant to acid and alkali, corrosion resistant, and wear resistant, so as to adapt to various working environments, resist chemical erosion and mechanical wear, prolong the service life of the polishing plate 10 and the plunger structure 111, and reduce the maintenance and replacement costs of the equipment.
[0064] By providing a plurality of polishing structures 110 on the side of the polishing plate 10 facing the polishing pad 20, and installing a plunger structure 111 capable of resiliently moving up and down to adjust the height of the arc polishing surface 110a at the bottom of each polishing structure 110, the arc polishing surface 110a can uniformly and finely polish the polishing pad 20. Due to the elastic action of the plunger structure 111, each polishing structure 110 can be self-adaptively adjusted according to the local thickness difference of the polishing pad 20, so as to ensure that the polishing force of the polishing plate 10 is uniformly distributed on the polishing pad 20, effectively avoiding the problem of product flatness caused by uneven thickness of the polishing pad 20, and further prolonging the service life of the polishing pad 20.
[0065] In addition, the arc polishing surface 110a of the polishing structure 110 can polish a depression lower than the plane of the polishing pad 20 at the groove 20a, so that the hard object 20b in the groove 20a does not contact the product surface, thereby effectively reducing the occurrence of scratches.
[0066] According to some embodiments, another aspect of the present application also provides a semiconductor polishing device. Please continue to refer to Figure 3 The semiconductor polishing device includes a polishing pad 20 and a polishing pad adjuster.
[0067] The polishing pad adjuster is arranged above the polishing pad 20 and includes the polishing plate 10 provided in the foregoing embodiments. The specific structure of the polishing plate 10 is described above, and the technical effects that can be achieved by the foregoing polishing plate 10 can also be achieved by the semiconductor polishing device, which will not be described here.
[0068] Any combination of the technical features of the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, it is to be understood that the scope of protection includes all possible combinations of the technical features.
[0069] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, some modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.
Claims
1. A polishing disc applied to a polishing pad adjuster of a semiconductor polishing apparatus, characterized in that, a side of the polishing disc facing a polishing pad is provided with a plurality of polishing structures, the polishing structure comprising a top portion facing the polishing pad and a bottom portion opposite to the top portion; wherein the top portion of the polishing structure has a circular arc polishing surface, and the bottom portion of the polishing structure is connected with a plunger structure, the plunger structure extending along the thickness direction of the polishing disc.
2. The grinding disc according to claim 1, characterized in that The diameter of the polishing structure ranges from 3mm to 6mm.
3. The polishing pad of claim 1, wherein, The sum of the length of the plunger structure and the polishing structure in the thickness direction of the polishing disc ranges from 4mm to 6mm.
4. The polishing pad of claim 1, wherein, The number of the polishing structure ranges from 200 to 300.
5. The polishing pad of claim 1, wherein, The plurality of polishing structures uniformly cover the side of the polishing disc facing the polishing pad.
6. The polishing pad of claim 1, wherein, The distance between any two adjacent polishing structures ranges from 1mm to 3mm.
7. The polishing pad of claim 1, wherein The minimum distance between the polishing structure closest to the edge of the polishing disc and the edge of the polishing disc ranges from 1mm to 3mm.
8. The polishing pad of claim 1, wherein, The circular arc polishing surface is the surface of a 1 / 4 sphere, and the diameter of the sphere is the same as the diameter of the polishing structure.
9. The grinding disc according to any one of claims 1 to 8, characterized in that, The plunger structure comprises a spring.
10. A semiconductor polishing apparatus characterized by comprising: Comprising: a polishing pad; a polishing pad adjuster arranged above the polishing pad, the polishing pad adjuster comprising the polishing disc according to any one of claims 1 to 9.