Deposition apparatus
By designing polygonal angle limiting plates in the deposition apparatus and utilizing rotational motion and temperature differences for in-situ cleaning, the problem of contaminant accumulation on the angle limiting plates was solved, improving the continuity and quality of the deposition process.
Patent Information
- Application Number
- CN202423155800.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-21
- Filing Date
- 2024-12-20
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2034-12-20
AI Technical Summary
In existing deposition equipment, the accumulation of contaminants on the angle limiting plate during deposition causes nozzle blockage, affecting the continuity and quality of the deposition process. Furthermore, traditional cleaning methods are time-consuming and inconvenient.
A deposition device including an angle limiting plate with a polygonal cross-sectional shape is designed, which is divided into a first region, a second region and a third region. The device switches between these regions by rotating, and uses heating, physical cleaning and cooling to achieve in-situ cleaning and prevent the accumulation of contaminants.
It achieves efficient removal of contaminants without disassembling the angle limiting plate, extends the continuous operation cycle of the sedimentation source, and improves production efficiency and sedimentation quality.
Smart Images
Figure CN223852733U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the deposition device including angle limiting board. More in detail, the utility model relates to the deposition device including angle limiting board and the cleaning method of deposition device. BACKGROUND
[0002] With the development of information technology, the importance of display devices as a connecting medium between users and information is increasingly highlighted. As a result, the use of display devices such as liquid crystal display devices (LCD), organic light emitting display devices (OLED), plasma display devices (PDP), etc. is increasing.
[0003] For example, the manufacturing process of a display device can include a deposition process of depositing a deposition material onto a substrate. In order to define the area deposited onto the substrate at a predetermined angle, an angle limiting plate can be used. SUMMARY
[0004] An object of the utility model is to provide a deposition device including an angle limiting plate capable of in-situ cleaning.
[0005] Another object of the utility model is to provide a cleaning method of the deposition device.
[0006] However, the objects of the utility model are not limited to the above-mentioned objects, and various extensions can be made without departing from the concept and field of the utility model.
[0007] In order to achieve the aforementioned object of the utility model, the deposition device according to an embodiment of the utility model can include: a deposition source that sprays a deposition material toward a substrate through a spray port; an angle limiting plate having a polygonal cross-sectional shape defined with a first area, a second area, and a third area, the first area being arranged at the periphery of the spray port to limit the spray angle of the deposition material, the second area intersecting the first area and performing physical cleaning, the third area being located between the first area and the second area and having a different temperature from the first area, the angle limiting plate being capable of in-situ cleaning when repeatedly moving in the first area, the second area, and the third area through a rotational motion; and a rotational driving device that rotates the angle limiting plate.
[0008] In an embodiment, the deposition apparatus can further include a heating device disposed inside the angle limiting plate and heating a portion of the angle limiting plate. The heating device can be an induction heating device including an induction coil.
[0009] In an embodiment, the heating device can further include a cooling pipe disposed inside the heating device and spaced apart from the induction coil. Cooling water that prevents the induction coil from being heated can flow inside the cooling pipe.
[0010] In an embodiment, the angle limiting plate can include a plurality of the heating devices. The plurality of the heating devices can be disposed adjacent to each side of the polygon.
[0011] In an embodiment, the heating device can include a first heating device adjacent to the first region, and the first heating device can provide heat above a vaporization / sublimation temperature of the deposition material to the first region.
[0012] In an embodiment, the deposition apparatus can further include a scrapper that scrapes the second region of the angle limiting plate and guides a fall of a contaminant.
[0013] In an embodiment, the deposition apparatus can further include a trap disposed below the second region of the angle limiting plate and trapping the contaminant falling from the second region.
[0014] In an embodiment, the deposition apparatus can further include a cooling device that cools the trap. The contaminant can be in a liquid state, and a trap material in which the contaminant is trapped can be in a solid state solidified by the cooling device.
[0015] In an embodiment, the deposition apparatus can further include a cooling device disposed above the third region of the angle limiting plate and cooling the third region.
[0016] In an embodiment, a third temperature of the third region can be less than a first temperature of the first region and a second temperature of the second region.
[0017] In an embodiment, the angle limiting plate can include steel use stainless (SUS).
[0018] In an embodiment, the deposition material can include a light emitting material.
[0019] To achieve the aforementioned another object of the present application, the cleaning method of the deposition apparatus according to an embodiment of the present application can include: a step of preparing an angle limiting plate having a polygonal cross-sectional shape in which a first region, a second region, and a third region are defined, the first region being arranged at a periphery of an injection port that injects a deposition material toward a substrate to limit an injection angle of the deposition material, the second region intersecting the first region and performing physical cleaning, the third region being located between the first region and the second region and processed to have a temperature different from that of the first region; and a step of performing in-situ cleaning when the angle limiting plate is repeatedly moved in the first region, the second region, and the third region through a rotational motion.
[0020] In an embodiment, the first region can be inductively heated.
[0021] In an embodiment, the inductive heating can be performed by a heating device arranged inside the angle limiting plate.
[0022] In an embodiment, the first region can be heated with heat above a vaporization / sublimation temperature of the deposition material.
[0023] In an embodiment, the physical cleaning of the second region can be a step of scraping the second region of the angle limiting plate to guide a fall of the contaminants.
[0024] In an embodiment, the cleaning method of the deposition apparatus can further include a step of capturing the contaminants falling from the second region below the second region of the angle limiting plate.
[0025] In an embodiment, the cleaning method of the deposition apparatus can further include a step of cooling a captured object that has captured the contaminants falling from the second region. The contaminants can be in a liquid state, and the captured object can be in a solid state.
[0026] In an embodiment, the third region can be cooled.
[0027] The deposition device according to an embodiment of the present application can include: a deposition source that sprays a deposition material toward a substrate through a spray port; an angle limiting plate having a polygonal cross-sectional shape defined with a first region, a second region, and a third region, the first region being arranged at a periphery of the spray port to limit a spray angle of the deposition material, the second region intersecting the first region and performing physical cleaning, the third region being located between the first region and the second region and having a different temperature from the first region, the angle limiting plate being capable of performing in-situ cleaning when repeatedly moving in the first region, the second region, and the third region through a rotational motion; and a rotational driving device that rotates the angle limiting plate. By performing in-situ cleaning on the angle limiting plate, accumulation of the contaminants on the angle limiting plate can be prevented, and a continuous operation period of the deposition source can be increased.
[0028] However, the effects of the present application are not limited to the aforementioned effects, and various extensions can be made without departing from the spirit and scope of the present application. BRIEF DESCRIPTION OF DRAWINGS
[0029] Figure 1 is a view for explaining a deposition device according to an embodiment of the present application.
[0030] Figure 2 is Figure 1 is an enlarged view of A portion of
[0031] Figure 3 is a view for explaining a path of a deposition material.
[0032] Figure 4 is Figure 2 is an enlarged view of B portion of
[0033] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 , Figure 14 , Figure 15 and Figure 16 are views for explaining a cleaning method of a deposition device using a deposition device according to an embodiment of the present application.
[0034] Figure 17 is a sectional view showing a sub-pixel on which a deposition process is completed using a deposition device according to an embodiment of the present application.
[0035] EXPLANATION OF REFERENCE NUMERALS
[0036] EH: ejection port BS: substrate
[0037] DM: deposition material S1: first region
[0038] S2: second region S3: third region
[0039] AS: angle limiting plate DUS: contaminant
[0040] DD1: first driving device IH: heating device
[0041] CO: induction coil RF: cooling pipe
[0042] CP: cooling device SC: physical cleaning device
[0043] CAP: capturing portion CAM: captured material DETAILED DESCRIPTION
[0044] Hereinafter, embodiments of the present application will be described in greater detail with reference to the accompanying drawings. Like reference numerals refer to like elements throughout the drawings and repeated description of the same elements will be omitted.
[0045] Figure 1 is a view for explaining a deposition apparatus according to an embodiment of the present application.
[0046] Referring to Figure 1 , the deposition apparatus 1 can include a deposition chamber CH and a deposition source DS disposed within the deposition chamber CH.
[0047] For example, at least one deposition source DS can be disposed within the deposition chamber CH. The deposition chamber CH can be maintained in a vacuum state during a deposition process. To this end, if a substrate BS is introduced into the inside of the deposition chamber CH through an inlet IN, the deposition chamber CH can be sealed. On the other hand, after the deposition process is completed, the vacuum state can be released, and the substrate BS on which the deposition process is completed can be discharged to the outside of the deposition chamber CH through an outlet OUT. For example, the substrate BS can be transferred by a roller and an electrostatic chuck. However, the present application is not limited thereto.
[0048] In an embodiment, the deposition source DS can eject a deposition material DM toward the substrate BS through an ejection port (for example, an ejection port EH of Figure 3 ).
[0049] For example, the deposition source DS can include a crucible, a heater, and a nozzle defining an ejection port EH. For example, the crucible can accommodate a deposition material DM. The heater can apply heat to the deposition material DM accommodated in the crucible to vaporize / desublimate the deposition material DM. The nozzle can eject the vaporized / desublimated deposition material DM toward the substrate BS through the ejection port EH.
[0050] For example, the deposition source DS can include a first deposition source DS1, a second deposition source DS2, and a third deposition source DS3. For example, the deposition material DM can include a first deposition material DM1, a second deposition material DM2, and a third deposition material DM3.
[0051] For example, the first deposition source DS1 can eject the first deposition material DM1 toward the first substrate BS1 through an ejection port (for example, the ejection port EH) of the deposition source DS. The second deposition source DS2 can eject the second deposition material DM2 toward the second substrate BS2 through the ejection port. The third deposition source DS3 can eject the third deposition material DM3 toward the third substrate BS3 through the ejection port. Figure 3
[0052] In an embodiment, the deposition material DM can include a light-emitting material. For example, the light-emitting material can include an organic material. As another example, the light-emitting material can include an inorganic material. However, the present application is not limited thereto.
[0053] For example, the first deposition material DM1 ejected from the first deposition source DS1 can include a red light-emitting material. The second deposition material DM2 ejected from the second deposition source DS2 can include a green light-emitting material. The third deposition material DM3 ejected from the third deposition source DS3 can include a blue light-emitting material. However, the present application is not limited thereto.
[0054] For example, the substrate BS can be arranged in a plurality within the deposition chamber CH. For example, the substrate BS can include a first substrate BS1, a second substrate BS2, and a third substrate BS3. The deposition process can be sequentially performed on the first substrate BS1, the second substrate BS2, and the third substrate BS3. At the third substrate BS3, the third deposition material DM3 can be deposited in a state in which the first deposition material DM1 and the second deposition material DM2 are deposited. At the second substrate BS2, the second deposition material DM2 can be deposited in a state in which the first deposition material DM1 is deposited. At the first substrate BS1, the first deposition material DM1 can be deposited. However, the present application is not limited thereto.
[0055] Figure 1 The deposition apparatus 1 is an example, and the present application is not limited thereto. For example, the deposition apparatus 1 can further include additional constituent elements, or can omit or change a part of the constituent elements.
[0056] For example, the substrate BS can be arranged as one within the deposition chamber CH.
[0057] As another example, the deposition chamber CH can further include an anti-adhesion plate or the like. For example, after performing the deposition process, the anti-adhesion plate can adsorb and remove residues of the deposition material DM. To this end, the anti-adhesion plate can be arranged inside the deposition chamber CH.
[0058] Figure 2 is an enlarged view of the A portion of Figure 1 Figure 3 is a diagram for explaining a path of a deposition material.
[0059] Referring to Figure 1 , Figure 2 and Figure 3 , the deposition apparatus 1 can include a deposition source DS arranged within the deposition chamber CH, a substrate BS, a mask MS, an angle limiting plate AS, a heating device IH, a physical cleaning device SC, a capturing portion CAP, a cooling device CP, a first driving device DD1, a second driving device DD2, and a third driving device DD3.
[0060] A deposition process of a second substrate BS2 using a second deposition source DS2 and a deposition process of a third substrate BS3 using a third deposition source DS3 can be substantially the same / similar to a deposition process of a first substrate BS1 using a first deposition source DS1. Therefore, for convenience of explanation, hereinafter, an explanation will be made centering on the first deposition source DS1 and the first substrate BS1.
[0061] In an embodiment, the deposition source DS can spray the deposition material DM toward the substrate BS through a spray port EH. For example, the first deposition source DS1 can spray the first deposition material DM1 toward the first substrate BS1 through the spray port EH.
[0062] The mask MS can include a mask frame MF. The mask MS can have a structure in which at least one hole HO is defined in the mask frame MF. The mask MS can be located between the deposition source DS and the substrate BS. For example, as shown in Figure 3 The first deposition material DM1 passing through the hole HO can form the first sub-pixel SP1. In forming the second sub-pixel SP2, a mask in which a hole is formed at a position overlapping the second sub-pixel SP2 can be used. The second deposition material DM2 passing through the hole can form the second sub-pixel SP2. In forming the third sub-pixel SP3, a mask in which a hole is formed at a position overlapping the third sub-pixel SP3 can be used. The third deposition material DM3 passing through the hole can form the third sub-pixel SP3.
[0063] In an embodiment, the angle restriction plate AS can be disposed around the ejection port EH so as to restrict the ejection angle of the deposition material DM.
[0064] In an embodiment, the cross-sectional shape of the angle restriction plate AS can have a polygonal shape. For example, when the cross-sectional shape of the angle restriction plate AS has a triangular shape, the cross-section can include a first side, a second side, and a third side. For example, as the angle restriction plate AS rotates, the first side, the second side, and the third side can sequentially restrict the ejection angle of the deposition material DM.
[0065] In an embodiment, the angle restriction plate AS can include SUS (stainless steel). However, the present application is not limited thereto.
[0066] A detailed description of the angle restriction plate AS will be described later with reference to Figure 4 A detailed description of the angle restriction plate AS will be described later with reference to
[0067] For example, the deposition material DM can be vaporized / sublimated by heating of the deposition source DS. Through the heating, the temperature of the deposition source DS can be greater than the temperature of the angle restriction plate AS.
[0068] Accordingly, the deposition material DM vaporized / sublimated in the deposition source DS can be liquefied / solidified on the angle restriction plate AS, which has a relatively small temperature. The deposition material DM (hereinafter, for convenience of explanation, referred to as "contamination") liquefied / solidified on the angle restriction plate AS can change the film forming angle, and if the contamination falls to the deposition source DS, can clog the ejection port EH.
[0069] A first driving device DD1 can be disposed in the angle restriction plate AS. In an embodiment, the first driving device DD1 can be a rotational driving device that rotates the angle restriction plate AS. The rotational driving device can be used without limitation as long as it can rotate the angle restriction plate AS by 360 degrees.
[0070] In an embodiment, the heating device IH can be disposed inside the angle restriction plate AS. In an embodiment, a plurality of heating devices IH can be disposed inside the angle restriction plate AS. In an embodiment, the plurality of heating devices IH can be disposed adjacent to each side included in the polygonal shape of the angle restriction plate AS.
[0071] For example, when the cross-sectional shape of the angle restriction plate AS has the triangular shape, a first heating device IH1 adjacent to the first side, a second heating device IH2 adjacent to the second side, and a third heating device IH3 adjacent to the third side can be disposed inside the angle restriction plate AS.
[0072] The number of the plurality of heating devices IH can be variously changed corresponding to the number of sides of the polygon.
[0073] In an embodiment, the heating device IH can heat a portion of the angle restriction plate AS. For example, the plurality of heating devices IH can be disposed at a position close to the deposition source DS, and at least one of the plurality of heating devices IH can heat the most adjacent side of the angle restriction plate AS.
[0074] For example, when the cross-sectional shape of the angle restriction plate AS is the triangular shape, the first heating device IH1 can be disposed adjacent to a vertex of the first side having a short perpendicular distance from the deposition source DS. The closer to the deposition source DS, the more the contaminants can be. In order to prevent the accumulation of the contaminants, at least one of the plurality of heating devices IH (e.g., the first heating device IH1) can apply heat to the contaminants (e.g., the first deposited substance DM1 on the first side) to vaporize / sublimate the contaminants. To this end, in an embodiment, the heating device IH (e.g., the first heating device IH1) can provide heat to the portion (e.g., the first side) of the angle restriction plate AS above the vaporization / sublimation temperature of the contaminants (e.g., the first deposited substance DM1 on the first side).
[0075] A detailed description of the heating device IH will be described later with reference to Figure 4 The following description relates to a detailed description of the heating device IH.
[0076] In an embodiment, the physical cleaning device SC can be a scraper. The scraper can scrape the second region (e.g., the second region S2) of the angle restriction plate AS. Accordingly, the fall of the contaminants can be guided. Figure 4
[0077] In an embodiment, the physical cleaning device SC can include SUS. For example, the scraper can include SUS. Thereby, when the scraper scrapes the angle restriction plate AS, damage due to a difference in hardness can be prevented.
[0078] For example, when the hardness of the scraper is large, the angle restriction plate AS can be scratched by the scraper. On the other hand, when the hardness of the scraper is small, the scraper can be worn.
[0079] For example, the second driving device DD2 can be disposed. For example, the second driving device DD2 can be a linear driving device. The second driving device DD2 can dispose the physical cleaning device SC close to the angle restriction plate AS, or dispose the physical cleaning device SC away from the angle restriction plate AS. The linear driving device can be used without limitation as long as it is a device capable of linearly moving the physical cleaning device SC.
[0080] In one embodiment, the trapping unit CAP can be arranged below the second region of the angle limiting plate AS. This allows the trapping of contaminants falling from the second region.
[0081] In one embodiment, the contaminant may be in a liquid state, and the contaminant captured by the capture unit CAP (e.g., Figure 11 The collected material (CAM) can be in a solid state. Therefore, in one embodiment, the collection unit CAP may further include a cooling device. For example, the cooling device may be a cooling pipe. The cooling pipe may be arranged around the collection unit CAP. Thus, the contaminant in its liquid state can be liquefied / solidified by the cooling device.
[0082] In one embodiment, the cooling device CP may be arranged in the third region of the angle limiting plate AS (e.g., Figure 4 Above the third region S3). Thus, the cooling device CP can cool the third region.
[0083] For example, the first region (e.g., Figure 4 The first temperature of the first region S1), the second temperature of the second region, and the third temperature of the third region can be different from each other. In one embodiment, as the first region is heated, the first temperature can be greater than the second and third temperatures. On the other hand, in one embodiment, as the third region is cooled, the third temperature can be less than the first and second temperatures. However, the present invention is not limited thereto. The first temperature, the second temperature, and / or the third temperature can also be the same.
[0084] For example, a third drive device DD3 can be arranged in the cooling device CP. For example, the third drive device DD3 can be a linear drive device. The third drive device DD3 can arrange the cooling device CP closer to the angle limiting plate AS, or farther away from the angle limiting plate AS. The linear drive device can be used without restriction as long as it is a device capable of linearly moving the cooling device CP. See below for further details. Figure 4 The following is a detailed description of the cooling device CP.
[0085] The deposition apparatus 1 can form a plurality of pixels PX on the substrate BS using the deposition process described above. For example, each of the plurality of pixels PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. For example, the first sub-pixel SP1 may emit red light. The second sub-pixel SP2 may emit green light. The third sub-pixel SP3 may emit blue light. However, the present invention is not limited thereto.
[0086] Figure 4 yes Figure 2 An enlarged view of part B.
[0087] Hereinafter, reference will be made to Figure 4 A detailed description will be given of an angle restriction plate AS capable of in-situ cleaning.
[0088] Referring to Figure 4 In an embodiment, the angle restriction plate AS capable of in-situ cleaning can have a polygonal cross-sectional shape. The angle restriction plate AS can define a first region S1, a second region S2, and a third region S3.
[0089] In an embodiment, the first region S1 can be disposed at a periphery of the ejection port EH to restrict an ejection angle of a deposition material (e.g., a first deposition material DM1). For example, the deposition material ejected in a radial pattern from a deposition source (e.g., a first deposition source DS1) can be blocked from flux by colliding with a portion (e.g., the first region S1) of the angle restriction plate AS. In this case, the deposition material can be prevented from being wasted by being radiated to a region apart from the substrate (e.g., Figure 1 the substrate BS).
[0090] In an embodiment, the first region S1 can be heated by a first heating device IH1. Accordingly, the contaminants can be prevented from being accumulated on the first region S1. In an embodiment, the first heating device IH1 can provide heat to the first region S1 above a vaporization / sublimation temperature of the contaminants. Thereby, the contaminants can be removed from the angle restriction plate AS.
[0091] When the contaminants exist in the first region S1, the contaminants can be vaporized / sublimated at a temperature above the vaporization / sublimation temperature to be removed from the angle restriction plate AS. Thereby, a separate cleaning process for removing the contaminants from the angle restriction plate AS can be omitted.
[0092] For example, the contaminants vaporized / sublimated from the angle restriction plate AS can be removed from the deposition chamber (e.g., Figure 1 the deposition chamber CH) by the anti-adhesion plate. However, the present application is not limited thereto. The contaminants vaporized / sublimated from the angle restriction plate AS can be removed from the deposition chamber in various ways.
[0093] As shown in Figure 3 and Figure 4 In an embodiment, each of the plurality of heating devices IH can be an induction heating device. In an embodiment, the induction heating device can include a frame FR, an induction coil CO, and a cooling pipe RF.
[0094] For example, the frame FR can provide a space in which the fixed induction coil CO and the cooling pipe RF are fixed. For example, the frame FR can be fixed to the inside of the angle limiting plate AS.
[0095] In an embodiment, the induction coil CO can generate heat to heat at least a portion (for example, the first region S1) of the angle limiting plate AS.
[0096] In an embodiment, the cooling pipe RF can be disposed to be spaced apart from the induction coil CO. Cooling water that prevents the induction coil CO from being heated can flow in the inside of the cooling pipe RF. The cooling water can remove heat generated in the induction coil CO while flowing through the cooling pipe RF.
[0097] Referring again to FIG. 1, Figure 4 In an embodiment, the second region S2 can be a region that crosses the first region S1 and is physically cleaned.
[0098] In an embodiment, the second region S2 can be adjacent to the physical cleaning device SC. For example, the physical cleaning device SC can be the scraper.
[0099] As described above, as the first region S1 is heated by the first heating device IH1, the first temperature of the first region S1 can be greater than the second temperature of the second region S2. As the second temperature is relatively smaller than the first temperature, the contaminants can be liquefied in the second region S2.
[0100] In an embodiment, the scraper can scrape the second region S2 to guide the contaminants to fall from the second region S2. Thereby, the contaminants can be removed from the angle limiting plate AS.
[0101] For example, as the deposition process proceeds, the amount of the deposition material that is liquefied / solidified on the first region S1 (that is, the amount of the contaminants) can increase. When the contaminants are not removed, as described above, the film forming angle can change, and if the contaminants fall to the deposition source DS, the ejection holes (for example, the ejection holes EH of the deposition source DS) can be clogged. Figure 3 Therefore, cleaning to remove the contaminants needs to be periodically performed.
[0102] In the case of the deposition apparatus according to the comparative example, after the deposition process is performed, the angle limiting plate is separated to perform a cleaning process. In this case, since a long time is consumed for cleaning due to the time for separating the angle limiting plate, the time for cleaning the angle limiting plate, and the time for resetting the angle limiting plate, and since the angle limiting plate is inconveniently disassembled and reset.
[0103] However, in the deposition apparatus according to an embodiment of the present application (for example, Figure 1In the case of the deposition apparatus 1), the in-situ cleaning can be performed in the second region S2. This prevents the accumulation of contaminants on the angle-limiting plate AS and increases the continuous operating cycle of the deposition source DS.
[0104] In one embodiment, the third region S3 may be located between the first region S1 and the second region S2. In another embodiment, the third region S3 may be adjacent to the cooling device CP.
[0105] For example, the cooling device CP can be a plate-shaped cooling plate. However, the present invention is not limited to this. For example, the cooling device CP can be used without limitation as long as it is a device capable of cooling at least a portion of the angle limiting plate AS (e.g., the third region S3).
[0106] As previously described, as the third region S3 is cooled by the cooling device CP, the third temperature of the third region S3 may differ from the first temperature of the first region S1 and the second temperature of the second region S2. In one embodiment, the third temperature of the third region S3 may be lower than the first temperature of the first region S1 and the second temperature of the second region S2.
[0107] When the angle limiting plate AS is rotated immediately after heating in the first region S1 and physical cleaning in the second region S2, the substrate (e.g., Figure 1 The substrate (BS) may be damaged by heat. To prevent this, the cleaning method of the deposition apparatus according to an embodiment of the present invention can cool a portion of the angle limiting plate AS in the third region S3.
[0108] In a deposition apparatus according to an embodiment of the present invention (e.g., Figure 1 In the case of the deposition device 1), when the first region S1, the second region S2 and the third region S3 are repeatedly moved by the rotation action, the contaminants can be prevented from liquefying / solidifying onto the angle limiting plate AS, and the contaminants on the angle limiting plate AS can be removed.
[0109] For example, when the angle limiting plate AS has the triangular shape, the angle limiting plate AS can rotate approximately 60 degrees. Thus, heating, physical cleaning, and cooling can be performed sequentially in the first region S1, the second region S2, and the third region S3.
[0110] The angle limiting plate AS is described above as having a triangular shape, but the present invention is not limited thereto. For example, the angle limiting plate AS can have various polygonal shapes, thereby including various faces, and can be rotated at various rotation angles.
[0111] For example, the angle restriction plate AS can have a rectangular shape. For example, the angle restriction plate AS can include a first face, a second face, a third face, and a fourth face. For example, the first face and the third face can be parallel to each other, and the second face and the fourth face can connect the first face and the third face.
[0112] For example, the angle restriction plate AS can be rotated if a predetermined amount or more of the deposition material (i.e., the contaminant) is deposited on the first face while the first face is heated to prevent the deposition of the deposition material. For example, the angle restriction plate AS can be rotated by about 90 degrees. Thereby, the second face can be located in the first region S1.
[0113] For example, the angle restriction plate AS can be rotated again if a predetermined amount or more of the deposition material (i.e., the contaminant) is deposited on the second face while the second face is heated to prevent the deposition of the deposition material. For example, the angle restriction plate AS can be rotated by about 90 degrees. Thereby, the third face can be located in the first region S1.
[0114] Through the rotation action, the first face and the second face can be subjected to the physical cleaning in the second region S2 in turn after the physical cleaning, and can be subjected to the cooling in the third region S3. In this case, since the deposition process can be performed on the first face and the second face, the period of the in-situ cleaning can become longer.
[0115] As another example, the angle restriction plate AS can have a hexagonal shape. For example, the angle restriction plate AS can include a first face, a second face, a third face, a fourth face, a fifth face, and a sixth face. For example, the first face and the fourth face can be parallel to each other, the second face and the fifth face can be parallel to each other, the third face and the sixth face can be parallel to each other, and the first face, the second face, the third face, the fourth face, the fifth face, and the sixth face can be connected in turn.
[0116] For example, the angle restriction plate AS can repeatedly perform the heating, the physical cleaning, and the cooling while being rotated by about 60 degrees each time.
[0117] For example, the angle restriction plate AS can repeatedly perform the heating, the heating, the physical cleaning, the physical cleaning, the cooling, and the cooling while being rotated by about 60 degrees each time.
[0118] For example, when the physical cleaning is performed twice, a fast and rough cleaning can be performed in the first cleaning process, and a fine cleaning can be performed only on a portion in which the contaminant remains in the second cleaning process.
[0119] As another example, when the cooling process is performed twice, the temperature can be reduced once during the first cooling process, and then reduced twice during the second cooling process. This prevents deformation or damage to the angle limiting plate AS caused by rapid cooling.
[0120] However, this invention is not limited thereto. The shape, rotation angle, and function of each surface (deposition, cleaning, cooling) of the angle limiting plate AS can be modified in various ways.
[0121] As explained above, the deposition apparatus 1, including the angle limiting plate AS, can prevent the contaminants from accumulating on the angle limiting plate AS, thereby increasing the continuous operating time of the deposition source DS. It can also prevent or remove the accumulation of the contaminants by vaporizing / sublimating them in the first region S1, and remove them by physically cleaning them in the second region S2. This can improve productivity and increase maintenance efficiency (e.g., time, manpower, cost, etc.), and can also improve deposition quality (e.g., uniformity, thickness, area, etc.) by preventing changes in the film formation angle.
[0122] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 , Figure 14 , Figure 15 and Figure 16 This is a diagram illustrating a cleaning method for a deposition apparatus using a deposition apparatus according to an embodiment of the present invention.
[0123] In the following text, omissions or simplifications will be referenced. Figure 1 , Figure 2 , Figure 3 and Figure 4 The description of the deposition apparatus 1 described above is a repetition of the previous description.
[0124] Reference Figure 5 In one embodiment, an angle limiting plate AS (S100) may be prepared. For example, it may be prepared in the deposition chamber (e.g., Figure 1 Inside the deposition chamber CH, the angle limiting plate AS is arranged such that the angle limiting plate AS is located between the deposition source DS and the substrate BS.
[0125] In one embodiment, the angle limiting plate AS can be formed of SUS. However, the present invention is not limited thereto.
[0126] Angle limiting plate AS can be arranged facing the substrate (e.g., Figure 1The angle-limiting plate AS can have a polygonal cross-sectional shape. The angle-limiting plate AS can have a first region S1 limiting an ejection angle of the deposition material, a second region S2 intersecting the first region S1 and performing a physical cleaning, and a third region S3 between the first region S1 and the second region S2 and processed to have a temperature different from that of the first region S1.
[0127] In an embodiment, the angle-limiting plate AS can perform the in-situ cleaning by repeating movement in the first region S1, the second region S2, and the third region S3 through a rotating action. Thereby, the deposition material (i.e., the contaminants) on the angle-limiting plate AS can be removed in-situ without disassembling the angle-limiting plate AS (S200 to S1200). This will be described with reference to Figure 6 The following detailed description relates to the in-situ cleaning by the rotating action.
[0128] Referring to Figure 6 In an embodiment, the first region S1 can be inductively heated (S200). In an embodiment, the inductive heating can be performed by a heating device (e.g., a first heating device IH1) disposed inside the angle-limiting plate AS.
[0129] In a case where the first region S1 is not heated, a temperature of the angle-limiting plate AS can be less than a temperature of the deposition source (e.g., the first deposition source DS1) heated by the heater. Accordingly, the deposition material (e.g., the first deposition material DM1) vaporized / sublimated from the deposition source can be accumulated on the angle-limiting plate AS (e.g., the first region S1).
[0130] As the first region S1 is heated, the deposition material (i.e., the contaminants) can be prevented from being accumulated on the angle-limiting plate AS. To this end, in an embodiment, the first region S1 can be heated with heat above a vaporization / sublimation temperature of the deposition material.
[0131] Referring to Figure 7 If the contaminants are accumulated on the first region S1 by a predetermined amount or more, the angle-limiting plate AS can be rotated (S300). The rotating action can be adjusted by various methods such as a case where a set time elapses, a case where a sensed amount of the contaminants exceeds a reference value, etc. Further, the rotating action can be automatically performed according to a preset signal, or can be performed upon input of a control signal.
[0132] Referring to Figure 8 , Figure 9 and Figure 10The contaminants can be physically cleaned in the second region S2 (S400, S500, and S600). In an embodiment, the physical cleaning can be scraping of the contaminants off the second region S2 of the angle limiter plate AS. Thereby, the contaminants accumulated on the angle limiter plate AS can be removed.
[0133] For example, the physical cleaning can be performed by a physical cleaning device SC (e.g., the scraper). The physical cleaning device SC can be disposed adjacent to the second region S2 of the angle limiter plate AS. For example, the physical cleaning device SC can be located at a position not interfering with the angle limiter plate AS while the angle limiter plate AS is rotating. To perform the physical cleaning, the physical cleaning device SC can be linearly moved to be adjacent to the angle limiter plate AS (refer to S400). To this end, the second driving device DD2 can be disposed in the physical cleaning device SC.
[0134] For example, the physical cleaning can be scraping of the second region S2 to direct the contaminants DUS to fall off (S500 and S600). To this end, the physical cleaning device SC can be linearly moved on the second region S2.
[0135] As previously described, the first region S1 can be heated by the heating device (e.g., the first heating device IH1) to have the first temperature, and the second region S2 can not be heated by the heating device to have a second temperature less than the first temperature. Accordingly, the contaminants DUS can be liquefied in the second region S2. By the physical cleaning, the contaminants DUS in a liquid state can be directed to fall off.
[0136] Referring to Figure 11 For example, the physical cleaning device SC can be linearly moved to a position not interfering with the angle limiter plate AS (S700).
[0137] Referring to Figure 12 In an embodiment, the contaminants DUS falling off from the second region S2 can be trapped into the trap portion CAP below the second region S2 (S800).
[0138] In an embodiment, the contaminants DUS trapped into the trap portion CAP (i.e., the trapped material CAM) can be cooled. In other words, the contaminants DUS can be in a liquid state, and the trapped material CAM can be in a solid state. Thereby, the trapped material CAM can be prevented from being scattered into the deposition chamber.
[0139] Referring to Figure 13 After the physical cleaning is completed, the angle limiter plate AS can be rotated (S900).
[0140] Referring to Figure 14In an embodiment, a portion of the angle restriction plate AS on which the physical cleaning is completed can be cooled (S1000). For example, the third region S3 of the angle restriction plate AS can be cooled.
[0141] When the angle restriction plate AS is rotated immediately after the heating in the first region S1 and the physical cleaning in the second region S2, the substrate (for example, Figure 1 the substrate BS) can be damaged by heat. To prevent such a phenomenon, the cleaning method of the deposition apparatus according to an embodiment of the present application can cool the portion of the angle restriction plate AS in the third region S3.
[0142] For example, the cooling can be performed by a cooling device CP. The cooling device CP can be disposed adjacent to the third region S3 of the angle restriction plate AS. For example, the cooling device CP can be positioned not to interfere with the angle restriction plate AS while the angle restriction plate AS is rotated. To perform the cooling, the cooling device CP can be linearly moved to be adjacent to the angle restriction plate AS (refer to S1000). To this end, the third driving device DD3 can be disposed in the cooling device CP.
[0143] Referring to Figure 15 for example, the cooling device CP can be linearly moved to a position not to interfere with the angle restriction plate AS (S1100).
[0144] Referring to Figure 16 After the cooling is completed, the angle restriction plate AS can be rotated (S1200).
[0145] As described above, the angle restriction plate AS can perform the in-situ cleaning while repeatedly moving in the first region S1, the second region S2, and the third region S3 by the rotating operation. Thereby, the deposited substance (i.e., the contaminant) on the angle restriction plate AS can be removed in-situ without disassembling the angle restriction plate AS (S200 to S1200).
[0146] Figure 17 is a cross-sectional view illustrating a sub-pixel on which a deposition process is completed using a deposition apparatus according to an embodiment of the present application.
[0147] Referring to Figure 17 , the sub-pixel can include a substrate BS, a buffer layer BFR, a transistor TR, a gate insulating layer GI, an interlayer insulating layer ILD, a via insulating layer VIA, a light emitting element EL, and a pixel definition layer PDL.
[0148] The transistor TR can include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. The light emitting element EL can include a first electrode AE, a light emitting layer EML, and a second electrode CAE.
[0149] The substrate BS can include glass, quartz, plastic, or the like. For example, the substrate BS can have a flexible, bendable, or rollable characteristic.
[0150] The buffer layer BFR can be disposed on the substrate BS. The buffer layer BFR can include an inorganic insulating substance. For example, the buffer layer BFR can include silicon oxide, silicon nitride, silicon oxynitride, or the like. The buffer layer BFR can function to block impurities to prevent the active layer ACT of the transistor TR from being damaged by impurities diffused from the substrate BS.
[0151] The active layer ACT can be disposed on the buffer layer BFR. For example, the active layer ACT can include a silicon semiconductor substance. For example, the active layer ACT can include amorphous silicon, polycrystalline silicon, or the like. As another example, the active layer ACT can include an oxide semiconductor substance. For example, the active layer ACT can include zinc oxide, zinc-tin oxide, zinc-indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide, indium-zinc-tin oxide, or the like.
[0152] The gate insulating layer GI can be disposed on the active layer ACT. The gate insulating layer GI can include an inorganic insulating substance. For example, the gate insulating layer GI can include silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, tantalum oxide, or the like. The gate insulating layer GI can function to electrically insulate the active layer ACT and the gate electrode GE from each other.
[0153] The gate electrode GE can be disposed on the gate insulating layer GI. The gate electrode GE can include an electrically conductive substance. For example, the gate electrode GE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. A gate signal can be applied to the gate electrode GE. The gate signal can adjust the electrical conductivity of the active layer ACT by turning on / off the transistor TR.
[0154] The interlayer insulating layer ILD can be disposed on the gate electrode GE. The interlayer insulating layer ILD can include an organic insulating substance and / or an inorganic insulating substance. The interlayer insulating layer ILD can function to electrically insulate the source electrode SE and the drain electrode DE from the gate electrode GE.
[0155] The source electrode SE and the drain electrode DE can be disposed on the interlayer insulating layer ILD. Each of the source electrode SE and the drain electrode DE can include an electrically conductive substance. For example, each of the source electrode SE and the drain electrode DE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. Each of the source electrode SE and the drain electrode DE can be in electrical contact with the active layer ACT through a contact hole that penetrates the interlayer insulating layer ILD and the gate insulating layer GI.
[0156] The via insulating layer VIA can be disposed on the source electrode SE and the drain electrode DE. The via insulating layer VIA can include an organic insulating substance. For example, the via insulating layer VIA can include a polyacrylic resin, a polyimide resin, an acrylic resin, or the like. Accordingly, an upper surface of the via insulating layer VIA can be substantially flat.
[0157] The first electrode AE can be disposed on the via insulating layer VIA. The first electrode AE can include an electrically conductive substance. For example, the first electrode AE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. The first electrode AE can be in electrical contact with the source electrode SE or the drain electrode DE through a contact hole that penetrates the via insulating layer VIA.
[0158] The pixel defining film PDL can be disposed on the first electrode AE. The pixel defining film PDL can include an organic insulating substance. For example, the pixel defining film PDL can include a polyacrylic compound, a polyimide compound, or the like. The pixel defining film PDL can divide a light emitting region of each of the plurality of pixels. To this end, the pixel defining film PDL can define a pixel opening that exposes the first electrode AE.
[0159] The light emitting layer EML can be disposed on the first electrode AE within the pixel opening. The light emitting layer EML can include an organic light emitting substance. For example, the light emitting layer EML can have a multi-layer structure including various functional layers. For example, the light emitting layer EML can further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
[0160] The second electrode CAE can be disposed on the light emitting layer EML and can cover the pixel defining film PDL.
[0161] In an embodiment, the deposition substance can be deposited on the first electrode AE to form the light emitting layer EML. In other words, the light emitting layer EML can be formed by the deposition apparatus (e.g., the deposition apparatus 1 of FIG. 1). Figure 1 In an embodiment, the deposition substance can be deposited on the first electrode AE to form the light emitting layer EML. In other words, the light emitting layer EML can be formed by the deposition apparatus (e.g., the deposition apparatus 1 of FIG. 1).
[0162] However, the present application is not limited thereto, and the layer formed by the deposition process can be a functional layer such as a hole transport layer, a charge transport layer. Alternatively, the layer formed by the deposition process can also be a capping layer, an encapsulation layer, etc. disposed on the second electrode CAE.
[0163] Industrial applicability
[0164] The deposition apparatus according to the exemplary embodiments of the present application can be applied to a process of manufacturing a display apparatus included in a computer, a notebook, a mobile phone, a smart phone, a smart pad, a portable media player (PMP), a personal digital assistant (PDA), an MP3 player, etc.
[0165] In the foregoing, the present application has been described with reference to embodiments thereof. However, it will be understood by those having ordinary skill in the art to which the present application pertains that various modifications and changes can be made thereto without departing from the spirit and scope of the present application as recited in the appended claims.
Claims
1. A deposition apparatus characterized by comprising: Comprising: a deposition source that sprays a deposition material toward a substrate through a spray port; an angle limiting plate having a cross-sectional shape of a polygon that defines a first region, a second region, and a third region, the first region being arranged at a periphery of the spray port to limit a spray angle of the deposition material, the second region intersecting the first region and performing a physical cleaning, the third region being located between the first region and the second region and having a temperature different from that of the first region, the angle limiting plate being capable of performing an in-situ cleaning when repeatedly moving in the first region, the second region, and the third region by a rotational motion; and a rotational driving device that rotates the angle limiting plate.
2. The deposition apparatus according to claim 1, further comprising: a heating device that is arranged inside the angle limiting plate and heats a part of the angle limiting plate, the heating device being an induction heating device including an induction coil.
3. The deposition apparatus according to claim 2, wherein: the heating device further includes a cooling pipe arranged inside the heating device and spaced apart from the induction coil, cooling water that flows inside the cooling pipe prevents the induction coil from being heated.
4. The deposition apparatus according to claim 2, wherein: the angle limiting plate includes a plurality of the heating devices, the plurality of the heating devices are arranged adjacent to each of the sides of the polygon.
5. The deposition apparatus according to claim 2, wherein: the heating device includes a first heating device adjacent to the first region, the first heating device supplies heat to the first region that is above a vaporization / sublimation temperature of the deposition material.
6. The deposition apparatus according to claim 1, further comprising: a squeegee that scrapes the second region of the angle limiting plate to guide a fall of contaminants.
7. The deposition apparatus according to claim 6, further comprising: a trap that is arranged below the second region of the angle limiting plate and traps the contaminants that fall from the second region.
8. The deposition apparatus according to claim 7, further comprising: a cooling device that cools the trap, the contaminants are in a liquid state, the trap material that is formed by trapping the contaminants in the trap is in a solid state by being solidified by the cooling device.
9. The deposition apparatus according to claim 1, further comprising: a cooling device that is arranged above the third region of the angle limiting plate and cools the third region.
10. The deposition apparatus according to claim 1, wherein: a third temperature of the third region is lower than a first temperature of the first region and a second temperature of the second region.