Novel ITO film layer structure

Abstract

The utility model relates to the technical field of semiconductors, and particularly discloses a novel ITO film layer structure, which comprises a substrate, an ITO film layer I and an ITO film layer II, the ITO film layer I is deposited on the substrate, the film layer I has the structure that IN2O3: SNO2 = 90: 10, the ITO film layer II is deposited on the ITO film layer I, and the film layer II has the structure that IN2O3: SNO2 = 93: 7. According to the utility model, by designing the composite ITO film layer, an appropriate IN / SN ratio is found to obtain optimal lattice matching, and the IN / SN ratio in the ITO film layer is solved, so that the brightness of the chip is effectively improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor technical field especially relates to a novel ITO film layer structure. BACKGROUND

[0002] Nowadays, semiconductor LED lighting has been widely used in indoor and outdoor lighting, display devices, mining and other industries, and has been supported by the state due to its energy-saving and environment-friendly advantages, and has huge development prospects. Looking at the current LED industry market competition is becoming increasingly fierce, and the competition for LED chips mainly reflects the competition of product brightness. ITO (indium tin oxide, a kind of transparent conductive film) plays an important role in the brightness contribution of LED chip, and in order to improve the brightness of the chip, it is necessary to maximize the transmittance of ITO film layer.

[0003] The ITO manufacturing process is generally in a high vacuum environment, Ar is introduced (Ar is ionized to produce plasma under the action of radio frequency power), the gas produces high-speed ions under the action of electromagnetic field, and the target material is impacted to make the target material surface atoms be impacted and sputtered to form a thin film on the substrate surface. The SPUT target material commonly used in the industry is IN2O3: SNO2 = 90:10, which is a single layer film, and the coating method is single. In the process of improving the brightness of the chip, in order to improve the light efficiency of ITO, the coating parameters are usually adjusted, such as changing TSD, DC\RF power, gas flow and other ways, the adjustment space is limited, and the influence on the crystal state of ITO film and IN / SN ratio is small, the IN / SN ratio in ITO film layer, the lattice of Sn itself is larger than that of In, so if too much Sn fills the vacancy, the overall lattice will be uneven, and additional absorption peak will appear, and the brightness improvement effect is difficult to further improve. UTILITY MODEL CONTENTS

[0004] In order to further improve the light efficiency of ITO and obtain a film layer with good crystal state, the utility model develops an ITO film layer structure of a composite film layer.

[0005] In order to achieve the above purpose, the utility model adopts the following technical scheme:

[0006] A novel ITO film layer structure, comprising a substrate, an ITO film layer one and an ITO film layer two, the ITO film layer one is deposited on the substrate, the film layer one structure is IN2O3: SNO2 = 90:10, the ITO film layer two is deposited on the ITO film layer one, and the film layer two structure is IN2O3: SNO2 = 93:7.

[0007] Further, the sum of the thicknesses of the ITO film layer one and the ITO film layer two is equal to the thickness of the original single layer film.

[0008] Preferably, the thickness ratio of the ITO film layer one and the ITO film layer two is 1:2.

[0009] Compared with the prior art, the novel ITO film layer structure has the following beneficial effects:

[0010] The ITO film layer is designed, the suitable IN / SN ratio is found, the best lattice matching is obtained, the IN / SN ratio in the ITO film layer is solved, and the brightness of the chip is effectively improved. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 The utility model discloses a structure schematic diagram.

[0012] Figure 2 The utility model discloses an embodiment contrast structure diagram.

[0013] Figure 3 The utility model discloses an embodiment experimental result diagram. DETAILED DESCRIPTION

[0014] In order to further illustrate the technical means and effects adopted by the utility model to achieve the predetermined utility model purposes, the specific implementation, structure, features and effects of the utility model are described in detail as follows by combining with the drawings and preferred embodiments.

[0015] As shown in 1, the novel ITO film layer structure of the utility model, including substrate, ITO film layer one, ITO film layer two, ITO film layer one is deposited on the substrate, and the film layer one structure is IN2O3: SNO2=90:10, ITO film layer two is deposited on ITO film layer one, and the film layer two structure is IN2O3: SNO2=93:7.

[0016] Embodiment:

[0017] As shown in Figure 2 The existing ITO film layer is a single-layer structure, specifically IN2O3: SNO2=90:10, and the thickness is 900A.

[0018] The ITO film layer of the utility model is a two-layer composite structure, specifically the first layer IN2O3: SNO2=90:10, the thickness is 300A, and the second layer IN2O3: SNO2=93:7, the thickness is 600A.

[0019] As shown in Figure 3 As shown in the drawings, through the test experiment on the structure of the utility model and the existing structure, it can be seen from the data that the light extraction efficiency of the composite film layer of the utility model is improved by 0.5%.

[0020] Specific preparation process:

[0021] Two different target positions are prepared on the SPUT coating machine, and different proportion ITO target materials are installed in each target position according to the above method. The combination mode is set by the machine program, and the ITO film layer indium tin ratio gradually changes.

[0022] The ITO coating conditions are as follows: temperature 25-120℃, initial vacuum degree 1.0E-5 to 1.0E-6 millibar, coating vacuum degree 2.0E-3 to 8.0E-3, DC / RF power 100-1000W, AR process 0-200sccm, O2 flow 0-5sccm, and target material spacing 50-200mm.

[0023] The ITO high-temperature annealing conditions are as follows: temperature 400-800℃, initial vacuum degree 30-100mtorr, annealing time 3-10min, and O2 (0-100sccm) and N2 (0-100SLM) atmosphere.

[0024] The above is only a preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content without departing from the technical solution of the present application, and any equivalent embodiments with equivalent changes and modifications are still within the scope of the present application.

Claims

1. A novel ITO film layer structure, characterized by: The ITO film layer one is deposited on the substrate, and the structure of the film layer one is IN2O3:SNO2=90:10; the ITO film layer two is deposited on the ITO film layer one, and the structure of the film layer two is IN2O3:SNO2=93:

7.

2. A novel ITO film layer structure as claimed in claim 1, characterized by: The sum of the thicknesses of the ITO film layer one and the ITO film layer two is equal to the thickness of the original single-layer film.

3. A novel ITO film layer structure as claimed in claim 2, characterized by: The thickness ratio of the ITO film layer one and the ITO film layer two is 1:2.

Images