Substrate processing apparatus and chemical filter

Abstract

The utility model provides a substrate processing device and a chemical filter. The purpose of the present invention is to perform stable pattern formation on a metal-containing resist film. The substrate processing apparatus according to the present disclosure is used for pattern formation by exposing and developing a metal-containing resist film formed on a substrate, and is characterized in that: a chemical filter is provided in a flow path through which a gas is supplied into the substrate processing apparatus; the chemical filter includes a plurality of filtration units that are arranged toward the downstream side and that respectively remove different substances in the gas, and the plurality of filtration units include an acid filtration unit for removing acidic substances and an alkali filtration unit for removing alkaline substances.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a chemical filter. Background Technology

[0002] In the manufacturing process of semiconductor devices, various processes are performed by transporting semiconductor wafers (hereinafter referred to as wafers) that serve as substrates within a system. For example, as shown in Patent Document 1, a gas that has passed through a filter and been purified is supplied into the system to keep the atmosphere in which the wafers are transported and processed clean.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-150372 Utility Model Content

[0006] Problems to be solved by utility models

[0007] This disclosure provides a technique for stable pattern formation on films containing metal resists.

[0008] Solution for solving the problem

[0009] This disclosure relates to a substrate processing apparatus for pattern formation by exposing and developing a metal resist-containing film formed on a substrate, wherein...

[0010] A chemical filter is provided in the gas supply path within the substrate processing apparatus. This chemical filter includes multiple filter sections arranged downstream to remove different substances from the gas.

[0011] The plurality of filtration sections include an acid filtration section for removing acidic substances and an alkaline filtration section for removing alkaline substances.

[0012] Preferably, the acid filtration section is located downstream of the alkali filtration section.

[0013] Preferably, the plurality of filtration sections include an organic filtration section for removing organic matter from the gas, the organic filtration section being disposed upstream of the alkaline filtration section in the flow path.

[0014] Preferably, the plurality of filtration sections includes an organic filtration section for removing organic matter from the gas, and the acid filtration section, the organic filtration section, and the alkali filtration section are sequentially arranged toward the downstream side.

[0015] Preferably, the chemical filter includes a first chemical filter and a second chemical filter, which are respectively provided in a first flow path and a second flow path for supplying the gas to different spaces within the substrate processing apparatus. In the first chemical filter and the second chemical filter, at least one of the following is different: the presence or absence of an organic filter section for removing organic matter from the gas, the arrangement order of the filter sections, and the thickness of the filter sections that remove the same object.

[0016] Preferably, the organic filter section is included only in the first chemical filter and the second chemical filter, and the thickness of the acid filter section in the second chemical filter is greater than the thickness of the acid filter section in the first chemical filter, or the thickness of the alkali filter section in the second chemical filter is greater than the thickness of the alkali filter section in the first chemical filter.

[0017] Preferably, a gap is provided between one of the plurality of filter sections and another filter section located behind the first filter section when the flow path is viewed downstream.

[0018] Another technical solution disclosed herein is a chemical filter for a substrate processing apparatus for exposing and developing patterns on a metal resist film formed on a substrate. The chemical filter includes a plurality of filtration sections arranged downstream in a gas supply path into the substrate processing apparatus and removing different substances from the gas. The plurality of filtration sections include an acid filtration section for removing acidic substances and an alkaline filtration section for removing alkaline substances.

[0019] Effects of the utility model

[0020] This disclosure enables stable pattern formation on films containing metal resists. Attached Figure Description

[0021] Figure 1 This is a top view of a wafer processing system that uses chemical filters.

[0022] Figure 2 This is a longitudinal sectional front view of the wafer processing system.

[0023] Figure 3 This is a schematic diagram of the wafer processing system.

[0024] Figure 4 This is a longitudinal sectional side view of the chemical filter of the first embodiment.

[0025] Figure 5 This is a schematic diagram illustrating the function of the chemical filter.

[0026] Figure 6 This is a schematic diagram illustrating the function of the chemical filter.

[0027] Figure 7 This is a schematic diagram illustrating the function of the chemical filter.

[0028] Figure 8 This is a schematic diagram illustrating the function of the chemical filter.

[0029] Figure 9 This is a longitudinal sectional side view of the chemical filter described in the second embodiment.

[0030] Figure 10 This is a longitudinal sectional side view of the chemical filter described in the third embodiment.

[0031] Figure 11 This is a longitudinal sectional side view showing a portion of the wafer processing system.

[0032] Figure 12 This is a longitudinal sectional side view showing another structural example of the wafer processing system.

[0033] Figure 13 This is a longitudinal sectional side view of the chemical filter described in the fourth embodiment.

[0034] Figure 14 This is a longitudinal sectional side view of another chemical filter described in the fourth embodiment.

[0035] Figure 15 This is a longitudinal sectional side view of the chemical filter described in the fifth embodiment.

[0036] Figure 16 This is a longitudinal sectional side view of the chemical filter described in Embodiment 6.

[0037] Figure 17 This is a longitudinal sectional side view of the chemical filter described in Embodiment 7.

[0038] Figure 18 This is a longitudinal sectional side view of the chemical filter described in Embodiment 8.

[0039] Figure 19 This is a longitudinal sectional side view showing another structural example of the wafer processing system.

[0040] Figure 20 This is a longitudinal sectional side view showing another structural example of the wafer processing system.

[0041] Figure 21 This is a longitudinal sectional side view showing another structural example of the wafer processing system.

[0042] Figure 22This is a top view showing yet another structural example of the wafer processing system.

[0043] Figure 23 This is a longitudinal sectional front view of the junction station that constitutes the wafer processing system.

[0044] Figure 24 This is a cross-sectional top view of the box handover station.

[0045] Figure 25 This is a longitudinal sectional front view of the interface station that constitutes the wafer processing system.

[0046] Figure 26 It is a longitudinal sectional side view of the cylinder including the chemical filter.

[0047] Explanation of reference numerals in the attached figures

[0048] W, wafer; 1, wafer processing system; 5, chemical filter; 53, acid filtration section; 54, alkali filtration section. Detailed Implementation

[0049] Hereinafter, a wafer processing system as a substrate processing apparatus according to this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, thereby omitting repeated descriptions.

[0050] <Wafer Processing System>

[0051] First, the structure of the wafer processing system of this embodiment will be explained. Figure 1 , Figure 2 These are schematic top views and front views illustrating the structure of the wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography system that performs resist film formation and development processes on a wafer W, which is a circular substrate.

[0052] like Figure 1 As shown, the wafer processing system 1 includes a cassette transfer station 2 for receiving and sending in cassettes C that hold multiple wafers W, and a processing station 3 equipped with multiple processing devices for applying predetermined processing to the wafers W. Furthermore, the wafer processing system 1 has a structure that integrates the cassette transfer station 2, the processing station 3, and an interface station 4, which performs wafer W transfer between the processing station 3 and an exposure device (not shown) located on the opposite side of the processing station 3 and adjacent to the interface station 4. Additionally, as... Figure 1 As shown, two processing stations 3 are set between the box handover station 2 and the interface station 4, but there can be one or more processing stations 3.

[0053] The cassette transfer station 2 is equipped with multiple cassette mounting plates 21, wafer transport devices 22 and 23. The cassette transfer station 2 uses wafer transport devices 22 or 23 to transport wafers between the cassette C, which is mounted on the cassette mounting plates 21, and the processing station 3. Therefore, wafer transport devices 22 and 23 may each have drive mechanisms in the X direction, Y direction, vertical direction, and around the vertical axis (θ direction), or may have drive mechanisms in all directions, as needed.

[0054] At least one of the wafer transport device 22 and wafer transport device 23 is capable of transferring wafers to the housing C, and also capable of transferring wafers to the processing station 3. Furthermore, the wafer transfer to the processing station 3 refers, for example, to the transfer of wafers to a third module G3 equipped with transfer devices accessible by the wafer transport device 33 within the processing station 3 (described later). The third module G3 may include multiple transfer devices (not shown) arranged vertically.

[0055] In addition, an inspection device (not shown) for inspecting the wafer W can be provided at a location accessible by either the wafer transport device 22 or the wafer transport device 23.

[0056] Processing station 3 has multiple modules, such as module 1 G1, module 2 G2, and module 4 G4. Additionally, as... Figure 2 As shown, multiple layers 31, each containing a first module G1 and a second module G2, are stacked vertically. For example, on the front side of the processing station 3 ( Figure 1 The first module G1 is located on the negative X-direction side of the processing station 3. Figure 1 The second module G2 is located on the positive X-direction side of the processing station 3. On the interface station 4 side of the processing station 3 ( Figure 1 The fourth module G4 is provided on the part that is connected to another adjacent processing station 3 (on the positive Y-direction side). The fourth module G4 may have multiple connection devices arranged in the vertical direction. In addition, the aforementioned third module G3 may be provided inside the processing station 3.

[0057] Module G1 is equipped with multiple processing devices, such as a pattern forming film forming apparatus and a developing process apparatus (not shown). The pattern forming film forming apparatus may include, for example, an anti-reflective film forming apparatus in addition to a resist film forming apparatus.

[0058] For example, multiple processing units can be arranged horizontally. Furthermore, the number, configuration, and type of these processing units can be arbitrarily selected.

[0059] In these pattern forming film forming apparatuses and developing apparatuses, processing is performed, for example, by supplying a predetermined processing solution or a predetermined gas to the wafer W. Thus, in the pattern forming film forming apparatus, a resist film used as a mask for forming a pattern of the underlying film is formed, as well as an anti-reflective film for efficiently performing light irradiation processing, such as exposure processing, is formed. On the other hand, in the developing apparatus, the exposed resist film is partially removed to form the uneven shape of the aforementioned mask.

[0060] For example, in module G2, heat treatment devices (not shown) for heating and cooling wafer W are arranged along the vertical and horizontal directions. Additionally, in module G2, although not shown, along the vertical direction (… Figure 2 The wafer W is equipped with a hydrophobic treatment device (for hydrophobic treatment to improve the fixing properties between the resist and the wafer W) arranged in the Z-direction and horizontal direction, and a peripheral exposure device for exposing the outer periphery of the wafer W. The number and configuration of these heat treatment devices, hydrophobic treatment devices, and peripheral exposure devices can be arbitrarily selected.

[0061] like Figure 1 As shown, a wafer transport region 32 is formed in the area sandwiched between the first module G1 and the second module G2 when viewed from above. A wafer transport device 33 is disposed, for example, in the wafer transport region 32.

[0062] The wafer transport device 33 has a transport arm 33a that is movable, for example, in the Y direction, front-back direction, θ direction, and vertical direction. The wafer transport device 33 moves within the wafer transport area 32 and is capable of transporting wafers W to designated devices within the surrounding first module G1, second module G2, third module G3, and fourth module G4. Figure 1 In the case shown with multiple processing stations 3, the wafer transport device 33 installed at the processing station 3 located on the interface station 4 side can transport wafers W to the first module G1, the second module G2, and the fourth module G4, and can also transport wafers W to a specified device in the fifth module G5 described later.

[0063] For example, Figure 2As shown, multiple wafer transport devices 33 are arranged vertically. One wafer transport device 33 can transport a wafer W to a device located at a predetermined height of the upper layer 31 among the multiple stacked layers 31. Other wafer transport devices 33 can transport wafers W to devices located at a predetermined height of the lower layer 31. Multiple wafer transport areas 32 are provided to enable the transport of such wafers W. Furthermore, the number of wafer transport devices 33 and the number of layers 31 corresponding to one wafer transport device 33 can be arbitrarily selected, such as providing a wafer transport device 33 for each layer 31.

[0064] Alternatively, a shuttle transport device (not shown) may be provided in wafer transport area 32 or in module 1 G1 and module 2 G2. The shuttle transport device transports wafer W linearly between a space adjacent to processing station 3 on one side and another space adjacent to it on the opposite side.

[0065] Interface station 4 is equipped with a fifth module G5 having multiple transfer devices, a wafer transport device 41, and a wafer transport device 42. Interface station 4 uses either wafer transport device 41 or wafer transport device 42 to transport wafer W between the fifth module G5 (which uses wafer transport device 33 for wafer transfer) and the exposure machine. For this purpose, wafer transport device 41 and wafer transport device 42 may each have drive mechanisms in the X direction, Y direction, vertical direction, and about the vertical axis (θ direction), or may have drive mechanisms in all directions, as needed. At least one of wafer transport device 41 and wafer transport device 42 can support wafer W and transport wafer W between the transfer devices and the exposure machine within the fifth module G5.

[0066] The cleaning device for cleaning the surface of wafer W and the aforementioned peripheral exposure device can be located within the interface station 4 at a position accessible to either the wafer transport device 41 or the wafer transport device 42.

[0067] As described above, the inspection device can be located at the box transfer station 2, but it can also be located at the processing station 3 and the interface station 4, in any of the conveyor arms located within their respective locations. Figure 1 or Figure 2 The positions that the wafer transport devices 33, 41, and 42 can reach.

[0068] The wafer processing system 1 described above includes a control device 100. The control device 100, for example, is a computer, and has one or more control circuits and a program storage unit (not shown) to execute program-based processing. The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. Additionally, the program storage unit also stores a program for controlling the operation of the drive systems of the various processing devices, transport devices, etc., described above to realize wafer processing in the wafer processing system 1. Furthermore, the program can be stored in a computer-readable storage medium H and loaded into the control device 100 from that storage medium H. Commands (steps) are programmed into this program to output control signals to each part of the wafer processing system 1 according to the loaded program. These control signals control the transport of substrates based on each wafer transport device and the operation of each processing device.

[0069] <Operations of the Wafer Processing System>

[0070] The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0071] First, a cassette C containing multiple wafers W is fed into the cassette transfer station 2 of the wafer processing system 1 and placed on the cassette mounting plate 21. Next, the wafers W in the cassette C are sequentially removed using the wafer transport device 22 or the wafer transport device 23 and transported to the transfer device of the third module G3.

[0072] The wafer W, delivered to the handover device of module 3 G3, is supported by the wafer transport device 33 and transported to the hydrophobication treatment device located in module 2 G2 for hydrophobication treatment. Next, it is transported by the wafer transport device 33 to the resist film forming device where a resist film is formed on the wafer W. After being transported to the heat treatment device and pre-baked, it is transported to the handover device of module 5 G5. Furthermore, in cases such as... Figure 1 , Figure 2 In the case shown with multiple processing stations 3, the wafer W is temporarily placed in the transfer device of the fourth module G4 before being transferred to the transfer device of the fifth module G5, and then transferred between multiple wafer transport devices 33. Alternatively, the wafer W can also be transported to the peripheral exposure device by the wafer transport device 33 as needed for exposure processing of the peripheral portion of the wafer.

[0073] The wafer W, which is delivered to the handover device of module G5, is transported to the exposure device via wafer transport device 41 and wafer transport device 42, and exposed with a specified pattern. Alternatively, the wafer W can be cleaned using a cleaning device before exposure.

[0074] The exposed wafer W is transported to the handover device of module G5 via wafer transport devices 41 and 42. Then, it is transported to the heat treatment device via wafer transport device 33 for post-exposure baking.

[0075] After exposure and baking, the wafer W is transported to the developing unit via wafer transport device 33 for developing. After developing, the wafer W is transported to the heat treatment unit via wafer transport device 33 for hardening and baking.

[0076] Then, wafer W is transported to the handover device of module G3 via wafer transport device 33, and then to the designated cassette C of cassette carrier board 21 via wafer transport device 22 or wafer transport device 23 of cassette handover station 2. Thus, a series of photolithography processes are completed.

[0077] Furthermore, the wafer processing system (substrate processing system) disclosed herein is not limited to the structure and operation described above. For example, in the embodiment described above, the wafer W is transferred between the interface station 4 and the exposure apparatus, but it may also not be directly connected to the exposure apparatus. In this case, for example, after the wafer W is transported from the cassette transfer station 2 to the processing station 3 and undergoes the necessary processing, it is transported back to the cassette transfer station 2 to ship the wafer W to the outside. In addition, unnecessary devices among the devices listed as processing devices may not be provided, or the processing in that device may not be performed.

[0078] <About Resist Film>

[0079] In the resist film forming apparatus of wafer processing system 1, a resist film containing a metal resist is formed. More specifically, for example, a metal oxide resist (MOR) film is formed. Furthermore, the aforementioned metal resist contains a metal as a constituent component of the resist, and does not refer to a resist containing a metal only as an impurity. The metal as a constituent component of this resist is, for example, tin (Sn). Moreover, this MOR resist film is patterned (pattern formation) by exposure and development in an exposure apparatus using light of an appropriate wavelength, such as EUV (Extreme Ultraviolet). Unless otherwise specified, the resist film described below refers to the MOR resist film.

[0080] The wafer processing system 1 is located in the atmospheric atmosphere of a cleanroom in a semiconductor manufacturing plant. To suppress the dispersion of particles within the system, the wafer processing system 1 draws in the surrounding atmosphere and supplies this atmosphere in a predetermined direction to form an airflow. However, the resist film of the MOR (Metal Resistant) degenerates through reaction with various components contained in the atmosphere, resulting in a change in the critical dimension (CD) of the formed resist pattern. Furthermore, in the evaluation test described later, acidic substances, and more specifically acetic acid, are shown as an example of components that cause changes in CD.

[0081] The wafer processing system 1 is equipped with a chemical filter for removing chemical substances from the gas. As described above, the air drawn into the wafer processing system 1 passes through this chemical filter, forming an airflow within the system. This chemical filter consists of multiple filter sections that remove different substances from each other. Therefore, it is possible to remove various chemical substances from the air supplied to the wafer processing system 1 that could cause variations in the resist pattern CD. Consequently, a stable patterning process can be performed on each wafer W, suppressing variations in CD between wafers W in the same batch and preventing CD deviations from permissible ranges.

[0082] <Example of Chemical Filter Configuration>

[0083] Reference Figure 3 A schematic front view of the wafer processing system 1 is described below. The junction station 2, processing station 3, and interface station 4 each have housings 20, 30, and 40, respectively, with each housing having a space that is separated from the others. Within these separated spaces are the aforementioned wafer W transport paths and various devices for processing and loading the wafer W. The wafer W is transported between stations 2 and 4 through openings (not shown) formed in housings 20 to 40.

[0084] A fan 51 is provided on the upper part of each of the housings 20, 30, and 40. Additionally, each of the housings 20, 30, and 40 has a flow path 52 leading downwards from the fan 51, and a chemical filter 5 is provided at the downstream end of the flow path 52, which is also the top of the housing. Furthermore, reference numeral 52A in the figures indicates a flow path forming member for forming the flow path 52. Using the action of the fan 51, air is drawn in from outside the wafer processing system 1 into the flow path 52, and then flows downstream within the flow path 52. With this flow, the air is supplied from above to the chemical filter 5, passes through the chemical filter 5, and is released from below the chemical filter 5. Thus, the air, having had various chemical substances removed by the chemical filter 5, forms a downward airflow within the housing.

[0085] <Example of the structure of a chemical filter>

[0086] Figure 4This is a longitudinal sectional side view of chemical filter 5. Furthermore, this... Figure 4 The arrows in the figures illustrating the structure of the chemical filter, as described later, indicate the direction of gas flow through the chemical filter. The chemical filter 5 includes an acid filter section 53 for removing acidic substances, an alkali filter section 54 for removing alkaline substances, and an organic filter section 55 for removing organic matter. The acid filter section 53, alkali filter section 54, and organic filter section 55 are stacked sequentially towards the upstream side of the flow path 52. In this example, the thickness (in the direction of gas flow) of each of the acid filter section 53, alkali filter section 54, and organic filter section 55 is the same.

[0087] These acid filtration sections 53, alkali filtration sections 54, and organic filtration sections 55 are sometimes collectively referred to as filtration sections 53 to 55. Furthermore, in this example, the flow path 52 is formed along the Z direction (vertical direction), therefore, the stacking direction of filtration sections 53 to 55 is also the Z direction.

[0088] The filter sections 53 to 55 are described in further detail. These filter sections 53 to 55 are filter materials that remove the aforementioned substances. The organic filter section 55 is, for example, composed of activated carbon, capable of adsorbing and removing various organic substances such as hydrocarbons, alcohols, ketones, esters, and aromatic compounds. The alkaline filter section 54 is, for example, composed of an ion exchanger, capable of removing various amines and ammonia, which are alkaline substances, as described above. This ion exchanger is, for example, a strongly acidic cation exchanger having a sulfonic acid group as a functional group. The acid filter section 53 is, for example, composed of an ion exchanger, capable of removing various organic acids such as acetic acid, which are acidic substances, as well as various inorganic acids such as hydrochloric acid, hydrofluoric acid, nitric acid, and sulfuric acid. This ion exchanger is, for example, a strongly basic anion exchanger having a quaternary ammonium group as a functional group.

[0089] For example, each of the filter sections 53 to 55 is configured as a plate-like body, with a structure having a plurality of small holes connecting one main surface of the plate to another main surface, so that supplied gas can pass through. A specific example of this structure could be a honeycomb structure. As described above, for the acid filter section 53 and the alkali filter section 54, which are ion exchangers, an ion exchange resin can be used, for example, in such a configuration.

[0090] Alternatively, instead of that structure, the filter sections 53-55 can also be formed as a sheet (including a thin sheet) by making fibers containing components for removing the aforementioned chemical substances into textiles, woven fabrics, or nonwoven fabrics. In this case, the aforementioned pores are gaps formed between the fibers. When using fibers in this way, the acid filter section 53 and the alkali filter section 54 can be constructed using ion exchange fibers to form an ion exchanger. The organic filter section 55 can be constructed from activated carbon fibers.

[0091] <Effects of Chemical Filters>

[0092] As described above, the chemical filter 5 includes an organic filter section 55, an alkaline filter section 54, and an acid filter section 53 facing downstream. Thus, by providing each filter section with different removal targets, the atmosphere passing through the chemical filter 5 removes various chemical substances that cause variations in the CD pattern formed on the resist film, supplying the wafer W to the transport path within the wafer processing system 1, as well as the devices for processing and mounting the wafer W. Therefore, as described above, the stabilization of the CD pattern on the resist film can be achieved.

[0093] Furthermore, in the film forming apparatus for patterning, EBR (Edge Bead Removal) is performed, which involves supplying an organic solvent to the periphery of the wafer W after film formation to remove unwanted portions, and pre-wetting treatment is performed, which involves supplying an organic solvent to the wafer W before film formation to improve the wettability of the processing solution used to form the film. This organic solvent may contain, for example, PGMEA (Propylene glycol monomethyl ether acetate), and a small amount of PGMEA may leak outside the wafer processing system 1 and be supplied to the chemical filter 5 by the fan 51.

[0094] Reference Figures 5-8 This explains the function of chemical filter 5 when PGMEA is supplied as an organic substance. Figures 5-8 In this context, atmospheric PGMEA is denoted as 61. For a period of time after the installation of a new chemical filter 5 in the wafer processing system 1, the PGMEA 61 supplied to the chemical filter 5 is collected by the organic filter section 55, which is located at the upstream end of the chemical filter 5, and is not released from the chemical filter 5. Figure 5 ).

[0095] However, when the supply of PGMEA61 or other organic matter to the chemical filter 5 continues, and the amount collected in the organic filter section 55 becomes large, the adsorption and removal performance of the organic filter section 55 for the newly supplied organic matter decreases, and this performance falls below the allowable range. That is, the organic filter section 55 reaches the end of its service life. Figure 6 Therefore, PGMEA 61 supplied to the chemical filter 5 passes through the organic filter section 55 and is then supplied to the alkaline filter section 54. Using the action of the alkaline filter section 54, PGMEA 61 decomposes and produces acetic acid (shown as 62 in the figure). Figure 7 As described above, acetic acid 62 causes changes in the CD pattern of the resist film used as MOR. However, since an acid filter section 53 is provided downstream of the alkali filter section 54 where acetic acid 62 is generated, the acetic acid 62 is removed by the action of this acid filter section 53. Figure 8This prevents acetic acid 62 from being released from chemical filter 5.

[0096] Further explanation of this Figures 5-8 The chemical filter 5 shown has filter sections 53 to 55, which, as described above, can remove various chemical substances, thus being advantageous for suppressing CD variations in the resist pattern. However, when the height of the space where the chemical filter 5 is installed is limited, the thickness of each of the filter sections 53 to 55 is relatively small due to the structure of having filter sections that can be used as multiple filter materials. Since the lifespan of the filter sections 53 to 55 corresponds to their thickness, it is difficult to extend the lifespan of each of the filter sections 53 to 55.

[0097] Therefore, when the concentration of organic matter around wafer processing system 1 is high, such as Figure 5 , Figure 6 As shown, the organic filter section 55 reaches the end of its lifespan relatively early, due to the generation of acetic acid 62 by PGMEA 61, which is the main cause of CD variation in the resist pattern. However, in the chemical filter 5, an alkali filter section 54 and an acid filter section 53 are arranged sequentially downstream of the organic filter section 55, therefore, as Figure 7 , Figure 8 As explained in the instructions, this is to prevent acetic acid 62 from being released from chemical filter 5.

[0098] Therefore, even if the wafer processing system 1 is placed in an environment where the concentration of organic matter around the wafer processing system 1 is relatively high, resulting in a relatively short lifespan for the organic filter section 55, it is not necessary to replace the chemical filter 5 before the end of its lifespan. In other words, based on the structure of the chemical filter 5, its replacement frequency is prevented from increasing when it is installed in the wafer processing system 1. This reduces the frequency of situations where the transport and processing of wafers W in the wafer processing system 1 are stopped due to replacement, thereby suppressing a decrease in the productivity of the wafer processing system 1.

[0099] <Second Embodiment of Chemical Filter>

[0100] The following describes other examples of chemical filters installed in the wafer processing system 1 instead of chemical filter 5. Figure 9This is a longitudinal sectional side view of the chemical filter 5A according to the second embodiment. The chemical filter 5A does not have an organic filter section 55, but is composed of an alkali filter section 54 and an acid filter section 53 stacked on top of each other. The arrangement order of the alkali filter section 54 and the acid filter section 53 is the same as that of the chemical filter 5. The acid filter section 53 is located downstream of the flow path 52 compared to the alkali filter section 54, so that the acetic acid 62 generated in the alkali filter section 54 can be removed using the acid filter section 53. As described in the description of the chemical filter 5, in the wafer processing system 1, the area below the flow path 52 where the chemical filter is located is downstream; therefore, the acid filter section 53 is positioned below the alkali filter section 54.

[0101] As described above, the chemical filter 5A does not have an organic filter section 55. Therefore, when the chemical filter 5 or the chemical filter 5A is selectively arranged within a predetermined height of space in the flow path 52, the thickness of the chemical filter 5A can be made larger for the thickness of the acid filter section 53 and / or the thickness of the alkali filter section 54. Furthermore, for this... Figure 9 The chemical filter 5A shown has a thickness similar to... Figure 4 The chemical filters 5 shown have the same thickness, and for the respective thicknesses of the acid filter section 53 and the alkali filter section 54, the thickness of the chemical filter 5A is greater than that of the chemical filter 5. An example of the relationship between the thicknesses of the filter sections of the chemical filters will be further explained below.

[0102] <Third Example of a Chemical Filter>

[0103] Figure 10 This is a longitudinal sectional side view of the chemical filter 5B according to the third embodiment. Like the chemical filter 5, the chemical filter 5B is constructed by stacking an acid filter section 53, an alkali filter section 54, and an organic filter section 55. The acid filter section 53, the organic filter section 55, and the alkali filter section 54 are arranged sequentially towards the downstream side of the flow path 52.

[0104] Furthermore, in chemical filter 5B, the thickness of the organic filter section 55 is greater than the thickness of the acid filter section 53 and the alkali filter section 54. By setting the thickness in this way, the period from the start of use of chemical filter 5B to the end of the lifespan of the organic filter section 55 is extended. During this extended period, even if PGMEA 61 is supplied to chemical filter 5B, it will not reach the alkali filter section 54. Therefore, the formation of acetic acid 62 in the alkali filter section 54 and the release of acetic acid 62 from chemical filter 5B can be prevented. Thus, like chemical filter 5, chemical filter 5B can also reduce the frequency of replacement even when used in environments with relatively high organic matter concentrations.

[0105] Furthermore, assuming that organic matter other than PGMEA, or compounds generated from the decomposition of such organic matter, affects the CD of the resist pattern, if the thickness of the organic filter section 55, like that of the chemical filter 5B, is relatively large, the organic matter can be collected for a longer period of time. That is, in the case where organic matter other than PGMEA causes changes in the CD of the resist pattern, the structure of the chemical filter 5B, based on the aforementioned relationship between the thicknesses of the filter sections 53 and 55, can suppress the frequency of replacement of the chemical filter 5B, and is therefore preferred. Furthermore, for Figure 4 The chemical filter 5 described herein can also further suppress the frequency of replacement by making the thickness of the organic filter section 55 greater than the thickness of the acid filter section 53 and the alkali filter section 54.

[0106] <Other examples of chemical filter configurations>

[0107] For each chemical filter, flow path 52 is shown as being configured to pass through the atmosphere that forms a downdraft, but this configuration is not limited to. Figure 11 The example shown illustrates a flow path 71 located on the side wall of the junction box 2, equipped with a chemical filter 5. Using a fan 72, air drawn in from outside the wafer processing system 1 flows laterally through the flow path 71 and passes through the chemical filter 5, creating a laterally oriented airflow within the housing 20. Therefore, filter sections 53-55 are arranged laterally. Figure 11 As shown in the example, the system structure is not limited to supplying gas to the chemical filter from above; the orientation of the chemical filter and the supply direction of the gas through the chemical filter can be arbitrarily set. In stations other than the box transfer station 2, the chemical filter can also be installed in a manner that allows gas to flow laterally within the housing to pass through.

[0108] in addition, Figure 12 An example is shown where a gas supply system 73 is connected to a wafer processing system 1. The gas supply system 73 is an external system of the wafer processing system 1 and includes a supply mechanism 74 that supplies gas with its temperature and humidity adjusted to be controlled within a specified range. The gas supply system 73 and the processing unit 70 located in the processing station 3 are connected via piping 75. In the gas supply system 73, a chemical filter 5 is disposed in a flow path 76 located upstream of the piping 75. Gas supplied from the supply mechanism 74 passes through the chemical filter 5 and is then supplied to the processing station 3 via piping 75.

[0109] The gas for which temperature and humidity are adjusted is, for example, an inert gas such as nitrogen. Furthermore, the processing apparatus 70 to which this inert gas is supplied has a housing 77, within which a processing space for processing the wafer W is formed, and the inert gas is supplied to this processing space. Therefore, this processing space is a space formed within the housing 30 of the processing station 3 by the housing 77, and is separated from the wafer transport area 32, which is supplied with atmosphere from the top chemical filter 5. Examples of processing apparatus 70 include pattern forming film forming apparatuses and heating apparatuses.

[0110] Furthermore, the inactive gas supplied from the gas supply system 73 via the chemical filter 5 is not limited to the processing apparatus supplied to the wafer W. For example, within the processing station 3, a standby device for suspending multiple wafers W can be provided in a standby space divided from the wafer transport area 32 by a housing 77. The inactive gas can also be supplied to this standby space. Furthermore, the standby device can also be provided at stations other than the processing station 3, such as the cassette transfer station 2. Additionally, the destination for the supply of the inactive gas can be the cassette mounting plate 21 of the cassette transfer station 2, through a gas supply port (not shown) on the cassette mounting plate 21 to supply the inactive gas to the interior of the cassette C where the wafer W is standing. The cassette C is, for example, a transport container called a FOUP (Front Opening Unify Pod), and is configured to supply gas from the outside to the inside. As described above, the destination for the supply of the inactive gas from the gas supply system 73 is not limited to the processing station 3.

[0111] exist Figure 11 , Figure 12 The example given is the use of chemical filter 5, but chemical filters 5A, 5B, and the following chemical filters can also be used instead of chemical filter 5. Furthermore, for this gas supply system 73, chemical filters 5A, 5B, and the following chemical filters can also be used instead of chemical filter 5. Additionally, as... Figure 12 As shown in the example, the gas supplied to each chemical filter is not limited to the atmosphere. In addition, the location of the chemical filter can be separate from the transport path of the wafer W and the housing of the processing device 70.

[0112] <Another structural example of a chemical filter>

[0113] Figure 13This is a longitudinal sectional side view of the chemical filter 5C according to the fourth embodiment. Like the chemical filter 5, the chemical filter 5C is constructed by arranging an organic filter section 55, an alkaline filter section 54, and an acid filter section 53 towards the downstream side of the flow path 52. However, gaps 57 and 58 are formed between the organic filter section 55 and the alkaline filter section 54, and between the alkaline filter section 54 and the acid filter section 53, respectively. Therefore, the chemical filter 5C is configured such that a gap is provided between one filter section and another filter section disposed behind that filter section when the flow path 52 is viewed downstream. Furthermore, reference numeral 59 in the figure refers to a cylindrical frame surrounding the side periphery of the filter sections 53-55 and forming the flow path 52, supporting the filter sections 53-55 in such a way as forming gaps 57 and 58. Figure 13 In the example shown, gaps 57 and 58 have the same width, but these widths can also be different. Figure 14 The image shows an example where the width of gap 57 is smaller than the width of gap 58.

[0114] Thus, adjacent filter sections 53-55 can be arranged without contacting each other. However, as mentioned above, the lifespan of a filter section corresponds to its thickness. From the viewpoint of arranging chemical filters within the limited space of the system and in a way that maximizes the lifespan of each filter section, it is preferable that adjacent filter sections contact each other.

[0115] Figure 15 This is a side view of the chemical filter 5D according to the fifth embodiment. Like the chemical filter 5C, the chemical filter 5D is configured with an organic filter section 55, an alkali filter section 54, and an acid filter section 53 arranged downstream of the flow path 52. However, since the flow path 52 is formed laterally, the filter sections 53 to 55 are also arranged laterally. Furthermore, the filter sections 53 to 55 are arranged relatively far apart within the frame 59. It can also be seen that... Figure 13 , Figure 14 The gaps 57 and 58 described in the text are relatively wide.

[0116] Such as Figure 15 As shown in the example, the filter sections are not limited to being close to each other and can be relatively far apart. In the case of such a relatively far apart arrangement, a chemical filter can be constructed by using the filter sections arranged from the upstream side of the gravity flow path (organic filter section 55 in this example) to the filter section arranged from the downstream side (acid filter section 53 in this example).

[0117] Figure 16 This is a side view of the chemical filter 5E according to the sixth embodiment. The chemical filter 5E is... Figure 13The chemical filter 5C shown has a substantially similar structure, but as a difference, protrusions 50 are provided in the alkali filtration section 54 and the acid filtration section 53. These protrusions 50 protrude upstream and downstream of the flow path 52, respectively. These protrusions 50 create unevenness on the main surfaces of the alkali filtration section 54 and the acid filtration section 53, thereby increasing the surface area of ​​these main surfaces and improving the removal performance of chemical substances. Furthermore, these protrusions 50 are not unavoidable during the manufacturing process of the filter section, and their height is, for example, 0.5 mm or more.

[0118] Furthermore, in the chemical filter 5E, when viewed in the direction of gas flow, the protrusions 50 on the opposing surfaces 54A of the alkali filter section 54 and the acid filter section 53 do not overlap. Therefore, a larger gap 58 between the acid filter section 53 and the alkali filter section 54 is prevented, thus preventing the chemical filter 5E from becoming too large, which is preferable.

[0119] In the chemical filter 5E, the organic filter section 55 does not have a protrusion 50, but it may also be provided with a protrusion 50 in the organic filter section 55, similar to the alkali filter section 54 and the acid filter section 53. Furthermore, the thickness of the filter sections 53 to 55 in this configuration with protrusion 50 refers to the thickness of the portion without protrusion 50.

[0120] As shown in the example of chemical filter 5E, the filter sections 53 to 55 are not limited to being flat as in the examples of chemical filters 5, 5A to 5D. Figure 17 As an example of a chemical filter where the filter sections 53-55 are not flat, a longitudinal sectional side view of the chemical filter 5F of the seventh embodiment is shown. In this chemical filter 5F, the filter sections 53-55 are each plate-shaped, consisting of repeated mountain-shaped and valley-shaped folds from one end to the other, thus forming a wavy shape when viewed from the side. Furthermore, in Figure 17 In the example, the filter section 53-55 is made into a so-called pleated shape by having creases, but it can also be made into a wavy shape when viewed from the side by not having creases.

[0121] As described above, by arranging the filter sections 53-55 in a wavy shape when viewed from the side, the surface area on the side facing the upstream side of the flow path 52 is increased, thereby improving the removal performance of chemical substances. Furthermore, in this… Figure 16 In the example, gaps 57 and 58 are provided between the filter sections 53 and 55, but the structure may also be without gaps 57 and 58.

[0122] Figure 18 This is a longitudinal sectional side view of the chemical filter 5G of the seventh embodiment. The chemical filter 5G is... Figure 13 The chemical filter 5C is constructed in a similar manner, but the difference is that the gap 57 between the filter sections 54 and 55 is not provided.

[0123] Due to variations in the supply of organic matter at different locations within the organic filter section 55, some locations reach the end of their service life earlier than others, and PGMEA 61 is supplied to the alkaline filter section 54 from these locations. In other words, PGMEA 61 is supplied locally from a portion of the organic filter section 55 to the alkaline filter section 54. In this case, acetic acid 62 is generated locally in the alkaline filter section 54 and is released towards the acid filter section 53, as indicated by the relatively thick arrow in the figure. However, the acetic acid 62 diffuses through the gap 58 between the acid filter section 53 and the alkaline filter section 54, thus inhibiting its supply to the localized location in the acid filter section 53. In other words, by providing the gap 58, the localized location in the acid filter section 53 is prevented from reaching the end of its service life earlier than other locations, thus preventing the removal of acetic acid 62. Consequently, the replacement frequency of the chemical filter 5G can be reduced.

[0124] Furthermore, for each of the previously described chemical filters that, like the chemical filter 5G, have a gap 58 between the alkali filter section 54 and the acid filter section 53, the same effect as the chemical filter 5G described above can also be obtained. Additionally, as... Figure 13 Similar to the chemical filter 5C, in the case where a gap 57 is also provided between the organic filter section 55 and the alkaline filter section 54, PGMEA 61 is also supplied to the alkaline filter section 54 after diffusing through this gap 57. Therefore, it is preferable to more reliably suppress the shortening of the lifespan of the acid filter section 53 at local locations.

[0125] <Setting up different chemical filters within the same system>

[0126] Furthermore, among the chemical filters described, the same chemical filter can be installed in the wafer processing system 1, but different chemical filters can also be installed. Appropriate chemical filters can be selectively configured considering factors such as the size of the installation space for each chemical filter within the system and the concentration of various chemical substances around the installation location. More specifically, each chemical filter installed in a flow path connected to a separately defined space can also have a different structure. Examples of such filters will be described below with reference to the accompanying drawings.

[0127] Figure 19 In the example shown, in wafer processing system 1, flow path 52 (first flow path) at the top of cassette transfer station 2 is provided with Figure 9 The chemical filter 5A described herein, and the flow path 52 (second flow path) at the top of the processing station 3 is provided with Figure 4The chemical filter 5 is described in the text. Furthermore, air is supplied from the chemical filter 5A (first chemical filter) and the chemical filter 5 (second chemical filter) to the housing 20, which serves as the first space, and the housing 30, which serves as the second space, respectively.

[0128] In this example, considering the high concentration of various organic substances around the treatment station 3 where organic solvents are used, a chemical filter 5 including an organic filtration section 55 is provided at the top of the treatment station 3 to improve its removal efficiency. On the other hand, considering the lower concentration of organic substances around the box transfer station 2 compared to the area around the treatment station 3, a chemical filter 5A without an organic filtration section 55 is provided at the top of the box transfer station 2. Since it does not include an organic filtration section 55, the acid filtration section 53 and the alkali filtration section 54 of the chemical filter 5A are configured to be relatively thick to effectively utilize the space and thus achieve a longer lifespan. Specifically, the thickness of the acid filtration section 53 and the thickness of the alkali filtration section 54 are configured such that the thickness of the chemical filter 5A is greater than that of the chemical filter 5, thereby achieving a longer lifespan for the chemical filter 5A.

[0129] exist Figure 20 Other setup examples are shown below. Figure 20 In the wafer processing system 1, the height of the area where the chemical filter can be installed is relatively large for processing station 3. Chemical filters 5 are installed on the top of both the cassette transfer station 2 and the processing station 3. However, the thickness of the organic filter section 55 in processing station 3 is greater than that in cassette transfer station 2, thus effectively utilizing the aforementioned installable area. This achieves a longer lifespan for the chemical filter 5 in processing station 3.

[0130] Figure 21 Another example of the setup is shown. In this example, it can also be configured such that a chemical filter 5 is installed at the top of the box transfer station 2, and on the other hand, a chemical filter 5 is installed at the top of the processing station 3. Figure 10 The chemical filter 5B shown has an organic filter section 55 with a thickness greater than the thickness of the other filter sections, thereby making the chemical filter of the treatment station 3 have a long service life.

[0131] As described above, among the chemical filters located at different positions within the wafer processing system 1, it is possible to make the inclusion of an organic filter section 55 different, to make the arrangement order of the included filter sections in the flow path different, or to make the thickness of any of the included filter sections different.

[0132] Furthermore, for chemical filters where the thickness of the filter section varies at different locations in the wafer processing system 1, an example is shown where the thickness of the organic filter section 55 is different, but it is also possible for the thicknesses of the alkali filter section 54 and / or the acid filter section 53 to be different. Additionally, for ease of explanation, it is assumed that the concentration of organic matter around the processing station 3 is high, and it is shown that the processing station 3 is equipped with an organic filter section 55 or configured as a long-life chemical filter, but this configuration is not limited to this. That is, the chemical filter described in the manner of being configured in the processing station 3 can also be configured in the cassette transfer station 2, and the chemical filter described in the manner of being configured in the cassette transfer station 2 can also be configured in the processing station 3. Moreover, it is shown that the structures of the chemical filters are different between the cassette transfer station 2 and the processing station 3, but it is also possible for the structures of the chemical filters to be different between other stations.

[0133] <System Partition Structure>

[0134] The wafer processing system 1, as a substrate processing apparatus, performs a series of pattern formations from the formation of the patterning film to development, as described above, but is not limited to this system structure. It can also be configured with multiple apparatus sections within a cleaning chamber, each undertaking a different part of this series of pattern formations. Furthermore, the wafer processing system can be configured such that a cassette C is sequentially transported between apparatus sections using a transport mechanism within the cleaning chamber, and a wafer W taken from the cassette C is transported and processed within each apparatus section, thereby performing pattern formation processing. The substrate processing apparatus is a device that processes the wafer W delivered from the cassette C and returns it to the cassette C; therefore, the multiple apparatus sections correspond to individual substrate processing apparatuses. Thus, the substrate processing apparatus can be configured to perform a part of the pattern formation process, and each apparatus section can be equipped with the described chemical filter.

[0135] To further explain the apparatus section, if it is not connected to the exposure apparatus, it is configured to include a cassette transfer station 2 and a processing station 3 for transporting wafer W between the apparatus section and cassette C. The processing station 3 only needs to include the necessary processing equipment described above. Alternatively, if it is connected to the exposure apparatus, it is configured to include a cassette transfer station 2 and an interface station 4, enabling the transport of wafer W between cassette C and the exposure apparatus via these stations. If the apparatus section also performs processing other than exposure, the processing station 3 is also provided.

[0136] Furthermore, pattern formation can involve repeated PEB (Post Exposure Bake) and development processes. The second and subsequent PEB and development processes are used to shape the pattern formed on the resist film using the first PEB and development. The described chemical filters can also be used in the apparatus for performing the second and subsequent PEB and development processes. The pattern formation process refers to the process from forming the resist film to developing that resist film; however, in the case of repeated PEB and development, this development is equivalent to the final development. Moreover, during repeated PEB and development, the etching of the underlying film (lower layer film) is not performed until the shaping is complete. In other words, the process from the formation of the resist film to the final development before the initial etching of the lower layer film is equivalent to pattern formation.

[0137] It has been explained that the inactive gas, obtained through the chemical filter described in each embodiment, can be supplied to the cartridge C and the standby device located within the station. By supplying the inactive gas in this way in a system that utilizes multiple device sections for pattern forming, even with a time delay in the transport mechanism reaching a device section, it is possible to suppress the deterioration of the resist film caused by the wafer W remaining idle in the cartridge C of a device section for an extended period, which is therefore preferable. Furthermore, the objective is not to allow wafers W transported to different device sections to remain idle, but rather to more reliably suppress the deterioration of the resist film before transporting the wafer W to its destination when transporting it within the same device section, by supplying the inactive gas to the cartridge C and the standby device.

[0138] Furthermore, while the materials constituting the filter sections 53 to 55 have been exemplified, each material can remove different chemical substances, and therefore, the process is not limited to the exemplified materials. For example, activated carbon with added alkaline substances such as potassium carbonate can be used for acid filter section 53, and activated carbon with added acidic substances such as phosphoric acid can be used for alkali filter section 54. Additionally, the filter sections 53 to 55 are not limited to the described configuration; for example, filter sections configured such as those formed by sandwiching numerous granular activated carbon particles in a non-woven fabric layer can also be used. Moreover, the substrate to be processed is not limited to a wafer; for example, it can be a substrate used in flat panel display manufacturing or a mask substrate used in manufacturing exposure masks. Therefore, rectangular substrates can be processed.

[0139] <Supplementary Information on MOR>

[0140] Further explanation of the MOR resist film is provided. In the resist film, ligands located at Sn atoms detach from the Sn atoms at the sites exposed by the exposure apparatus, and many of the detached Sn atoms bond together via oxygen (O) atoms. That is, Sn is oxidized to form a cross-linked structure, creating a structure like -Sn-O-Sn-O-Sn-O- in the exposed regions of the resist film. Furthermore, the ratio of Sn atoms to O atoms in the cross-linked structure is not limited to 1:1. Through the formation of this cross-linked structure, the exposed sites become insoluble relative to the developing fluid, and PEB promotes the formation of this cross-linked structure. During development, the unexposed areas where no cross-linked structure has formed are removed.

[0141] <Other structural examples of wafer processing systems>

[0142] Figure 22 The image shows a top view of the wafer processing system 1A. The wafer processing system 1A is constructed in a largely similar manner to the wafer processing system 1; the following description focuses on the differences between the two systems. In the description of the wafer processing system 1A, the side where the junction box 2 is located and the side where the interface station 4 is located are designated as the left and right sides, respectively; the side where the first module G1 is located and the side where the second module is located are designated as the front side and the rear side, respectively.

[0143] Chemical filters 5H are installed at junction station 2, processing station 3, and interface station 4, replacing chemical filter 5. Additionally, a wafer processing system 1A is connected to... Figure 12 The gas supply system 73 is described in the diagram. A chemical filter 5H is also provided in the flow path 76 of this gas supply system 73 instead of the chemical filter 5.

[0144] The chemical filters 5H installed at each station are located within the flow path 82 of a rectangular cylinder 81, which is internally configured as a gas flow path 82. Like the chemical filter 5, the chemical filter 5H includes an acid filter section 53, an alkali filter section 54, and an organic filter section 55, but the arrangement of these filter sections differs from that of the chemical filter 5. Details regarding the chemical filter 5H will be described later.

[0145] In box transfer station 2, a cylinder 81 is provided on the left side wall of the housing 20, above the box mounting plate 21. The upstream side of the flow path 82 formed by the cylinder 81 faces left and towards the external space of the housing 20. In each processing station 3, a cylinder 81 is provided on the upper wall of the housing 30. The upstream side of the flow path 82 formed by the cylinder 81 faces upward and towards the external space of the housing 30. In interface station 4, a cylinder 81 is provided protruding forward and backward from the front side wall and the rear side wall of the housing 40, respectively. The upstream side of the flow path 82 formed by the front cylinder 81 faces forward and towards the external space of the housing 40, while the upstream side of the flow path 82 formed by the rear cylinder 81 faces backward and towards the external space of the housing 40.

[0146] Thus, stations 2, 3, and 4 are each equipped with a cylinder 81 containing a chemical filter 5H. Furthermore, at each of stations 2, 3, and 4, external air from the wafer processing system 1A is drawn in via the chemical filter 5H located at that station, and this air is supplied to the housings 20, 30, and 40 constituting the station. This air intake and supply is performed using a fan 51 located downstream of the chemical filter 5H in the airflow path formed at each station. Alternatively, instead of drawing in external air from the wafer processing system 1A, air can be drawn in, for example, by connecting a supply pipe to the housing 81 to supply air whose temperature or humidity has been adjusted using external equipment.

[0147] Additionally, a filter 90 for removing foreign matter from the atmosphere is provided downstream of the fan 51 in the atmospheric flow path, through which the atmosphere is supplied to the housing. This filter 90 is, for example, an ULPA (Ultra Low Penetration Air) filter. As described above, a flow path is formed at each station, in which a chemical filter 5H, a fan 51, and a filter 90 are provided downstream, and the aforementioned cylinder 81 forms part of this flow path. For convenience, the filter 90 is sometimes referred to as a foreign matter removal filter 90.

[0148] The processing station 3 will be further explained. Atmosphere is supplied from above to the wafer transport area 32 within the processing station 3 via a flow path comprising a chemical filter 5H, a fan 51, and a foreign matter removal filter 90, all housed in the aforementioned housing 30. Furthermore, as... Figure 12 As illustrated, the gas supply system 73 supplies gas with adjusted temperature and humidity to the processing devices 70 included in the first module G1 and the second module G2 respectively via the chemical filter 5H of the gas supply system 73.

[0149] Next, in Figure 23 Longitudinal section front view and Figure 24The box transfer station 2 is described in detail in the cross-sectional top view. Furthermore, the structure of the chemical filter 5H and the cylinder 81 is also described in further detail. The cylinder 81 is constructed by connecting individual metal cylinders 81A and 81B axially to each other via a connecting member 83. Cylinder 81A forms the upstream side of the flow path 82, and cylinder 81B forms the downstream side of the flow path 82. The connecting member 83 is an elastic member formed in a ring shape along the circumference of cylinders 81A and 81B; specifically, it is, for example, a seal.

[0150] The chemical filter 5H is configured by sequentially arranging an organic filter section 55, an acid filter section 53, and an alkaline filter section 54 towards the downstream side of the flow path 82. The organic filter section 55 and the acid filter section 53 are disposed within a cylinder 81A, and the alkaline filter section 54 is disposed within a cylinder 81B. In this example, the organic filter section 55 is a sheet containing activated carbon, the acid filter section 53 is a sheet containing impregnated activated carbon, and the alkaline filter section 54 is a sheet containing cation exchange resin. These sheets are formed, for example, with fibers woven in them, to divide the flow path 82 into an upstream and downstream side. Moreover, as... Figure 17 As explained in the text, each filter section, which is thus constructed as a thin sheet, is folded into a pleated shape.

[0151] Regarding the mountain-shaped structure formed by bending thin sheets, if the distance between adjacent tops in the flow path 82 direction is defined as the apparent thickness L, in this example, to extend the lifespan of the alkali filter section 54, the apparent thickness L of the alkali filter section 54 is greater than the apparent thickness L of the organic filter section 55 and the acid filter section 53. Furthermore, by making the apparent thickness L relatively large, the volume of the space between the folds formed by the thin sheets of the alkali filter section 54 is also relatively large. As a result, the pressure loss when gas passes through the area in the flow path 82 where the alkali filter section 54 is located is reduced. Therefore, even if the alkali filter section 54, assuming a flat shape, has a relatively high pressure loss, setting the relationship of the apparent thickness L of each filter section as described above is effective not only from the viewpoint of extending the lifespan of the alkali filter section 54, but also from the viewpoint of reducing the pressure loss of the flow path 82. Furthermore, the case where the alkali filter section 54 has a relatively high pressure loss includes cases where the pressure loss is higher than that of the organic filter section 55 or the acid filter section 53, which are also assumed to have a flat shape.

[0152] Furthermore, in this example, because the apparent thickness L of the alkali filter section 54 is relatively large, the cylinder 81 is relatively long. When the cylinder 81 is integrally formed, its size could increase the difficulty of manufacturing and processing. Therefore, as already explained, the cylinder 81 is composed of cylinders 81A and 81B, which are separate components, and these cylinders 81A and 81B are connected via connecting member 83. When each filter section 53 to 55 is provided within such a cylinder 81, the space formed between the acid filter section 53 and the alkali filter section 54 becomes larger, corresponding to the thickness of the connecting member 83, due to the presence of the connecting member 83. Figure 18 As illustrated in the example, this space allows atmospheric diffusion through the acid filter section 53 to supply the alkali filter section 54, thereby suppressing the decline in the lifespan of the alkali filter section 54 at local locations, which is therefore preferable.

[0153] In the box transfer station 2, a plurality of, for example, three cylinders 81 are arranged in a front-back direction at the same height. Each cylinder 81 is arranged such that its axis extends in a left-right direction within the housing 20 constituting the box transfer station 2, and as described above, the upstream side of the flow path 82 opens in the side wall on the left side of the housing 20.

[0154] A suction housing 84 is provided on the right side of each cylinder 81. The suction housing 84 forms a space 85 that is elongated front to back and separated from the surrounding area. The downstream side of the flow path 82 of each cylinder 81 is connected to this space 85. Two fans 51 are provided on the suction housing 84, extending to the left and right along the axis of rotation. These fans 51 are positioned front to back on the right side of the space 85. Each fan 51 can suction the flow path 82 of each cylinder 81 through the space 85. Therefore, multiple fans 51 are used to suction the flow path of a single cylinder 81.

[0155] The upstream ends of the two pipes 86 are arranged in a front-to-back manner on the right side of the suction housing 84 and are respectively connected to the suction housing 84. Air drawn in by the rear fan 51 is supplied to the flow path 87 within the rear pipe 86, and air drawn in by the front fan 51 is supplied to the flow path 87 within the front pipe 86. The downstream side of each pipe 86 extends downwards and then bends to the left. The lower side of the leftward-extending portion of each pipe 86 is open. Furthermore, by providing a foreign matter removal filter 90 that blocks the open portion of the pipe 86 from below, the downstream end of the flow path 87 is positioned above the foreign matter removal filter 90 as a flat space. Therefore, as... Figure 23 As shown, the flow path 87 is in the shape of a horizontally tilted letter L when viewed from the front, and the chemical filter 5H is located above the foreign matter removal filter 90.

[0156] Air supplied from outside the wafer processing system 1A via a chemical filter 5H to the flow path 87 within the pipe 86 by a fan 51 is supplied downwards via a foreign matter removal filter 90. The area below the foreign matter removal filter 90, through which air is supplied in this way, is the area where wafers W are transported using wafer transport devices 22 and 23.

[0157] Thus, a flow path is formed from the chemical filter 5H to the foreign matter removal filter 90 using the cylinder 81, the suction housing 84, and the pipe 86. This flow path is bent in a laterally inclined U-shape. Since the chemical filter 5H has filter sections 53 to 55, it is larger than a chemical filter that only has one or both of these filter sections. However, as described above, by bending the flow path, even if the chemical filter 5H is configured, it is possible to prevent the flow path from becoming too large in the left-right direction. In other words, according to the flow path structure of this example, a relatively large chemical filter 5H can be provided in the flow path direction without causing the flow path to become too large in the left-right direction.

[0158] Next, refer to Figure 25 The side view illustrates interface station 4. Figure 25 Viewing the interface station 4 from the right. In this example, multiple processing devices 70 are stacked on the rear side within the housing 40 of the interface station 4. The processing performed using these processing devices 70 is not limited, but may include, for example, cleaning the wafer W before exposure using an exposure apparatus. In this interface station 4, air drawn in from different chemical filters 5H is supplied to mutually different areas in a flow path. The air supplied through the chemical filters 5H in the rear-side cylinder 81 is destined for the processing devices 70. Furthermore, the air supplied through the chemical filters 5H in the front-side cylinder 81 is destined for the area moved by the wafer transport devices 41 and 42 outside the processing device 70.

[0159] The front end of the cylindrical body 81 located at the rear of the housing 40 is connected to a pipe 91 that extends obliquely upward from the side wall of the housing 40 when viewed from the side. A flow path 82 within the cylindrical body 81 and a flow path 94 formed by a flow path forming member 93 located inside the housing 40 are connected to each other via the pipe 91. A fan 51 and a foreign matter removal filter 90 are provided on the downstream side of the flow path 94. The downstream end of the flow path forming member 93 is configured as a pipe, for example, and connected to each processing unit 70. According to the above structure, air drawn into the housing 40 by the fan 51 of the flow path 94 via the rear-side chemical filter 5H is supplied to each processing unit 70 via the foreign matter removal filter 90.

[0160] The rear end of the cylindrical body 81 located at the front of the housing 40 is connected to the side wall of the housing 40. The flow path 82 inside the cylindrical body 81 is in communication with the flow path 96 formed by the flow path forming member 95 located inside the housing 40. A fan 51 and a foreign matter removal filter 90 are provided on the downstream side of the flow path 96. According to the above structure, the air drawn into the housing 40 by the fan 51 of the flow path 96 through the chemical filter 5H on the front side is supplied to the moving area of ​​the wafer transport devices 41 and 42 through the foreign matter removal filter 90.

[0161] For interface station 4, the chemical filter 5H can also be located at the upper part of the station housing 40, similar to that of processing station 3. However, as described above, by providing the chemical filter 5H on the side of housing 40, the cylinder 81 is prevented from protruding from the upper wall of housing 40, and as a result, the height of interface station 4 can be suppressed. For example, when the structural members of the exposure apparatus are located above interface station 4, suppressing the height of interface station 4 in this way is effective in preventing interference with these structural members.

[0162] Furthermore, when the cylinder 81 equipped with the chemical filter 5H is placed on the side wall of the housing 40, in the event of interference between the cylinder 81 and the components provided on the side wall of the housing 40, as exemplified by the rear-side cylinder 81, a structure is provided in which the pipe 91 is positioned between the cylinder 81 and the housing 40. This prevents such interference. Therefore, if there is no such interfering element, the pipe 91 can be omitted; if it is necessary, it can be placed between the front-side cylinder 81 and the wall of the housing 40. However, as... Figure 25 As shown, consider replacing the flow path from the housing 81, which is located on the side wall of the housing 40, toward the interior of the housing 40 via the pipe 91, with a flow path where the gas flowing inside the housing 40 flows downward from the side toward the interior. In this case, not only is it easier to prevent the aforementioned interference, but since there is no upward flow path, it is also easier to supply air to each processing device 70 located below the housing 81. If only to prevent the aforementioned interference, the orientation of the pipe 91 could be made horizontal, but it can be said that the example of this disclosure is preferred in terms of efficient air supply. In addition, in this interface station 4, the air supply destination after passing through the rear chemical filter 5H is set to the processing device 70, and the air supply destination after passing through the front chemical filter 5H is set to the wafer W transport area, but the air supply destination can be appropriately set according to the arrangement position of the processing device 70 in the housing 40. Therefore, it is also possible to supply air to the processing device 70 via the front chemical filter 5H.

[0163] also, Figure 23The organic filter section 55 and the acid filter section 53 are shown to be separate from each other, but they can also be in contact. In this example, the apparent thickness L of the alkali filter section 54 among the filter sections 53-55 is greater than the apparent thickness L of the other filter sections, but this is not a limitation; the filter section with the larger apparent thickness L can be determined based on the environment in which the wafer processing system 1A is set. Furthermore, it is not limited to making the apparent thickness L of only a specific filter section greater than the apparent thickness L of the other filter sections. Moreover, when the thickness L of each filter section is relatively small, the cylinder 81 is not limited to being composed of cylinders 81A and 81B, as... Figure 26 As shown, it can also be constructed solely of the cylindrical body 81B. Furthermore, the arrangement order of the filter sections 53-55 is not limited to... Figure 23 , Figure 26 The example shown can also be set up to the arrangement order described in other examples.

[0164] Furthermore, in the previous example of the wafer processing system 1 described above, the chemical filter is located downstream of the fan 51, but it can also be configured such that the chemical filter is located upstream of the fan 51, as in the wafer processing system 1A. Additionally, the foreign matter removal filter 90 is not shown in the wafer processing system 1, but it can be provided in the same manner as in the wafer processing system 1A.

[0165] An example is shown where chemical filters 5 and 5H are provided in a wafer processing system for forming a resist film of MOR and in a gas supply system 73 attached to the wafer processing system. However, the chemical filters 5 and 5H are not limited to such a system. Specifically, chemical filters 5 and 5H can also be provided in a wafer processing system for forming a resist film using a chemically amplified resist and in a gas supply system 73 attached to the wafer processing system. The wafer processing system for forming a chemically amplified resist film can be configured similarly to the wafer processing system described, except that the type of resist supplied to the wafer W is different.

[0166] It should be considered that the embodiments disclosed herein are illustrative rather than restrictive in all respects. The above embodiments may be omitted, substituted, modified, and combined in various ways without departing from their technical concept and spirit.

[0167] <Evaluation Experiment>

[0168] The following experiment was conducted: During the patterning process on wafer W, a gas containing an organic compound was supplied to a portion of the surface of wafer W (designated as region 1) at any stage. The size of the CD (displacement coefficient) was compared between the pattern formed in region 1 and the pattern formed in region 2 where the gas was not supplied. The gas supply stage was any one of stages 1 through 4. Stage 1 was before the formation of the resist film composed of MOR (Modal-Organic Resist); Stage 2 was after the formation of the resist film and before exposure using the exposure apparatus; Stage 3 was after exposure and before PEB (Printed Electrode Embedding); and Stage 4 was after PEB and before development. Furthermore, development and PEB were not repeated in this evaluation experiment.

[0169] Furthermore, in this evaluation test, an exposure device using KrF (krypton fluoride) as the light source was used. Moreover, the supplied organic compound gas was varied depending on each wafer W. Specifically, gases were supplied from a mixture of PGMEA and acetic acid, a mixture of PGMEA, acetic acid, propylene glycol monomethyl ether and PEGMEA, hexamethyldisilazane, cyclohexanone, methyl ethyl ketone, and acetone. For the PEGMEA and acetic acid mixture, mixtures containing 2%, 5%, and 40% acetic acid by weight were used, respectively.

[0170] As a result of the evaluation test, for wafer W supplied with gas obtained from a mixture of PEGMEA and acetic acid, or acetic acid gas, in stage 2, stage 3, or stage 4, the CD size differs between region 1 and region 2. More specifically, for wafer W supplied with acetic acid gas in stage 2 or stage 3, the CD size in region 1 is smaller than that in region 2. For wafer W supplied with acetic acid gas in stage 4, the CD size in region 1 is larger than that in region 2. For other wafers W, no significant difference in CD size was found between region 1 and region 2. Based on the results of this evaluation test, it can be inferred that the acetic acid contributes to the variation of the CD size in the pattern. Therefore, as described in the embodiment, it can be said that the method of including an organic filter section 55, an acid filter section 53, and an alkaline filter section 54 in the chemical filter according to the order described in the embodiment to prevent the release of acetic acid generated from decomposed PEGMEA is effective.

Claims

1. A substrate processing apparatus for pattern formation by exposing and developing a metal resist-containing film formed on a substrate, characterized in that, A chemical filter is provided in the gas supply path within the substrate processing apparatus. This chemical filter includes multiple filter sections arranged downstream to remove different substances from the gas. The plurality of filtration sections include an acid filtration section for removing acidic substances and an alkaline filtration section for removing alkaline substances.

2. The substrate processing apparatus according to claim 1, characterized in that, The acid filtration section is located downstream of the alkali filtration section.

3. The substrate processing apparatus according to claim 2, characterized in that, Among the plurality of filtration units is an organic filtration unit that removes organic matter from the gas. The organic filter section is located upstream of the alkali filter section in the flow path.

4. The substrate processing apparatus according to claim 1, characterized in that, Among the plurality of filtration units is an organic filtration unit that removes organic matter from the gas. The acid filtration section, the organic filtration section, and the alkali filtration section are arranged sequentially towards the downstream side.

5. The substrate processing apparatus according to claim 1, characterized in that, As the chemical filter, a first chemical filter and a second chemical filter are provided, which are respectively disposed in a first flow path and a second flow path for supplying the gas to different spaces within the substrate processing apparatus. In the first chemical filter and the second chemical filter, The presence or absence of an organic filter section for removing organic matter from the gas, the arrangement order of the filter sections, and the thickness of the filter sections that remove the same type of organic matter differ in at least one of the following:

6. The substrate processing apparatus according to claim 5, characterized in that, Only the first chemical filter, which is one of the first chemical filters and the second chemical filter, includes the organic filtration section. The thickness of the acid filter section in the second chemical filter is greater than the thickness of the acid filter section in the first chemical filter, or the thickness of the alkali filter section in the second chemical filter is greater than the thickness of the alkali filter section in the first chemical filter.

7. The substrate processing apparatus according to claim 1, characterized in that, A gap is provided between one of the plurality of filter sections and another filter section located behind the first filter section when the flow path is viewed downstream.

8. A chemical filter for substrate processing apparatus for exposing and developing a pattern formed on a substrate containing a metal resist film, characterized in that, The chemical filter includes multiple filtration sections arranged downstream in a gas supply path to the substrate processing apparatus, each removing different substances from the gas. The plurality of filtration sections include an acid filtration section for removing acidic substances and an alkaline filtration section for removing alkaline substances.

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