Load locking chamber and semiconductor process equipment

Abstract

The utility model provides a load locking chamber and semiconductor process equipment, and the load locking chamber comprises a chamber body which is internally provided with a bearing surface for bearing a wafer; and the cooling spray head is arranged in the chamber body and located above the bearing surface, the orthographic projection of the cooling spray head on the bearing surface covers the orthographic projection of the wafer on the bearing surface, and the cooling spray head is used for being connected with a gas source and spraying cooling gas to the surface of the wafer. According to the load locking chamber provided by the utility model, the cooling nozzle is arranged in the chamber body, the cooling gas with lower temperature is blown to the surface of the wafer through the cooling nozzle, and heat generated by the high-temperature wafer is taken away by utilizing the temperature difference between the cooling gas with lower temperature and the high-temperature wafer, so that the purpose of cooling the wafer is achieved. And compared with a wafer natural cooling mode, the efficiency is higher. Moreover, residual corrosive gas on the surface of the wafer can be cleaned, and corrosion to the internal structure of the chamber body is reduced.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, specifically to a load-locking chamber and semiconductor process equipment. Background Technology

[0002] In the High Selective Chemical Etch (HSE) process, the process chamber temperature needs to be heated to 200-300°C. After the high-temperature process, the wafer is transferred to the load locking chamber, where the wafer temperature will generally be above 200°C. The part of the atmospheric robot that contacts the wafer is usually made of rubber. High temperatures can easily cause irreversible deformation of the contact part, causing the wafer to slip during the transfer process, thus affecting the transfer speed and accuracy of the atmospheric robot.

[0003] Therefore, it is necessary to cool the high-temperature wafer within the load-locking chamber to reduce its temperature to a preset range, thereby preventing it from affecting the atmospheric robotic arm. Typically, natural cooling is used to cool the wafer. However, natural cooling is slow, increasing process latency and reducing production efficiency. Utility Model Content

[0004] This invention aims to at least solve the problem that the natural cooling method used in the prior art is slow, which increases the waiting time of process steps and leads to a decrease in production efficiency. It proposes a load-locking chamber and semiconductor process equipment.

[0005] To achieve the purpose of this utility model, a load locking chamber is provided, comprising: a chamber body having a bearing surface inside for bearing a wafer; a cooling nozzle disposed within the chamber body and above the bearing surface, wherein the orthographic projection of the cooling nozzle on the bearing surface covers the orthographic projection of the wafer on the bearing surface, and the cooling nozzle is used to connect to a gas source and spray cooling gas onto the wafer surface; a uniform flow cavity is provided inside the cooling nozzle, and the surface of the cooling nozzle is provided with jet holes and an air inlet respectively communicating with the uniform flow cavity; there are multiple jet holes evenly distributed on the side of the cooling nozzle facing the bearing surface, and the air inlet is used to communicate with the gas source; the relationship between the diameter D2 of the air inlet, the number n of all jet holes, and the diameter D3 of each jet hole satisfies that D2 2 / (n×D3 2 The value range of ) is 4-64.

[0006] In some embodiments, the bottom of the chamber body is provided with a pressure detection hole, a cleaning gas outlet, an exhaust hole, and a cleaning gas inlet, respectively; the pressure detection hole, the cleaning gas outlet, the exhaust hole, and the cleaning gas inlet are distributed circumferentially at intervals.

[0007] In some embodiments, the cooling nozzle includes: an upper cover disposed within the chamber body and fixedly connected to the chamber body, wherein the upper cover has an air inlet on the side facing away from the bearing surface; and an air distribution plate disposed on the side of the upper cover facing the bearing surface, wherein the upper cover is fastened to the air distribution plate and forms the air distribution cavity, and a plurality of jet holes are evenly disposed on the air distribution plate.

[0008] In some embodiments, the top cover is provided with a diffusion groove on the side facing the bearing surface, the air inlet extends to the bottom of the diffusion groove, the surface of the air distribution plate facing away from the bearing surface and the diffusion groove form the flow distribution cavity, and the depth H2 of the diffusion groove is in the range of 2mm≤H2≤8mm.

[0009] In some embodiments, all the jet holes are divided into multiple jet hole groups, the jet holes in the same jet hole group are distributed at intervals in the circumferential direction of the air distribution disk, and different jet hole groups are distributed at intervals from the inside to the outside in the radial direction of the air distribution disk, and the number of jet holes in the jet hole group further out is greater.

[0010] In some embodiments, the load locking chamber further includes a diffuser, which communicates with the cooling nozzle, the diffuser being used to provide cooling gas into the cooling nozzle and diffuse the provided cooling gas into the interior of the cooling nozzle.

[0011] In some embodiments, the diffuser includes: a body having an inlet and an outlet, the inlet of the body being connected to an air source, and the outlet of the body being connected to the cooling nozzle; the body having a diffuser cavity inside, the inlet and outlet of the body being connected to the diffuser cavity respectively, and the cross-sectional area of ​​the diffuser cavity gradually increasing in the direction from the inlet to the outlet of the body.

[0012] In some embodiments, the inlet diameter of the body part is D4, the outlet diameter of the body part is D5, and the value range of D5 / D4 is 3≤D5 / D4≤18.

[0013] In some embodiments, the diffusion cavity has a variable diameter section and a constant diameter section connected sequentially in its axial direction. The variable diameter section extends to a first end of the diffusion cavity, and the constant diameter section extends to a second end of the diffusion cavity and communicates with the outlet of the body portion. The inner wall of the variable diameter section forms an angle A with the end face of the first end of the diffusion cavity, and 90°≤A<180°.

[0014] According to a second aspect of the present invention, a semiconductor process apparatus is also disclosed, comprising a semiconductor equipment front-end module, a transmission chamber, a process chamber, and the aforementioned load-locking chamber, wherein the load-locking chamber is connected between the transmission chamber and the semiconductor equipment front-end module, and the process chamber is connected to the transmission chamber.

[0015] This invention's load-locking chamber incorporates cooling nozzles within the chamber itself. These nozzles blow cooler gas onto the wafer surface, utilizing the temperature difference between the cooler gas and the high-temperature wafer to remove heat generated by the wafer, thus achieving wafer cooling. This method is more efficient than natural wafer cooling. Furthermore, it can clean any residual corrosive gases on the wafer surface, reducing corrosion to the internal structure of the chamber. Attached Figure Description

[0016] Figure 1 This is a schematic diagram showing the connection between the front-end module of a semiconductor device and the load locking chamber in related technologies.

[0017] Figure 2 This is a schematic diagram showing the connection between the liquid cooling device and the lifting motor in the load locking chamber of the related technology.

[0018] Figure 3 This is a schematic diagram of the structure of a liquid cooling device for a load-locking chamber in related technologies;

[0019] Figure 4 This is a schematic diagram of the load locking chamber according to an embodiment of the present invention;

[0020] Figure 5 This is a schematic diagram of the load locking chamber in use according to an embodiment of the present invention;

[0021] Figure 6 This is a schematic diagram of the cooling nozzle of the load locking chamber according to an embodiment of the present invention;

[0022] Figure 7 for Figure 6 A magnified view of part B in the middle section;

[0023] Figure 8 This is a perspective view of the cooling nozzle of the load locking chamber according to an embodiment of the present invention;

[0024] Figure 9 This is an exploded view of the load locking chamber according to an embodiment of the present invention;

[0025] Figure 10 This is a schematic diagram of the structure of the diffusion section of the load locking chamber according to an embodiment of the present invention;

[0026] Figure 11This is a schematic diagram of the structure of the base of the load locking chamber according to an embodiment of the present invention;

[0027] List of reference numerals in the attached diagram:

[0028] 10. Chamber body; 11. Top cover; 111. First side; 112. Second side; 113. Connecting hole; 12. Side wall; 13. Base; 131. Pressure detection hole; 132. Clean gas outlet; 133. Exhaust hole; 134. Clean gas inlet; 20. Nozzle; 21. Top cover; 211. Air inlet; 212. Diffusion groove; 213. Second sealing groove; 22. Gas equalization plate; 221. Air jet hole; 23. Flow equalization chamber; 30. Diffusion section; 31. Body section; 311. Inlet; 312. Outlet; 313. Diffusion chamber; 313a. Variable diameter section; 313b. Constant diameter section; 314. First sealing groove; 32. Quick connector; 33. Connecting nut; 40. Filter; 50. Flow controller; 100. Wafer. Detailed Implementation

[0029] To enable those skilled in the art to better understand the technical solution of this utility model, the load locking chamber and semiconductor process equipment provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0030] With the development of integrated circuit technology, the integration density of semiconductor devices is increasing, the number of etching processes is constantly increasing, and the process technology is becoming more and more refined. Correspondingly, in the chip manufacturing process, the influence of wafer temperature and some residual gas are becoming increasingly sensitive to the process of complex morphologies. Therefore, as advanced processes are continuously developed, temperature and residual gas have an increasingly significant impact on the process. As a result, rapid temperature control and minimal residual gas play a crucial role in improving product yield.

[0031] like Figure 1 As shown, in the semiconductor equipment, the EquipmentFront EndModule 1a is connected to the Transfer Module 3a via two Load Lock Chambers 2a. In operation, an atmospheric manipulator 4a first places the wafer from the EquipmentFront EndModule 1a into one of the Load Lock Chambers 2a. After the Load Lock Chamber 2a is evacuated, a vacuum manipulator 5a removes the wafer from the Load Lock Chamber 2a and places it into the Process Module 6a via the Transfer Module for etching. After the etching process is complete, the vacuum manipulator 5a removes the wafer from the Process Module 6a and places it into the other Load Lock Chamber 2a via the Transfer Module 3a. After inflation, the atmospheric manipulator 4a places the wafer back into the EquipmentFront EndModule 1a. The Load Lock Chamber 2a switches between vacuum and atmospheric environments through venting and inflation.

[0032] In processes such as High Selective Chemical Etch, the process chamber temperature needs to be heated to a high temperature of 200-300°C. After the high-temperature process, the wafer is transferred to the load locking chamber, where the wafer temperature will generally be above 200°C. The part of the atmospheric robot that contacts the wafer is generally made of rubber. High temperature can easily cause irreversible deformation of the contact part, causing the wafer to slip during the transfer process, thus affecting the transfer speed and accuracy of the atmospheric robot.

[0033] Therefore, it is necessary to cool the high-temperature wafer within the load-locking chamber to reduce the wafer temperature to a preset range, thereby avoiding interference with the atmospheric robotic arm. Typically, natural cooling or liquid cooling methods are used to cool the wafer.

[0034] Natural cooling is a slow process, which increases the waiting time for process steps and reduces production efficiency.

[0035] like Figure 2 and Figure 3 As shown, liquid cooling is employed, requiring a liquid cooling device 7a to be installed within the load locking chamber 2a to cool the high-temperature wafer. The liquid cooling device 7a uses cooling water as the cooling medium and has an inlet 8a and an outlet 9a at its lower end. The liquid cooling device 7a is connected to a lifting motor 10a, which controls its movement. When a wafer enters, the liquid cooling device 7a rises and comes into contact with the wafer, thereby cooling it.

[0036] Compared with natural cooling, using liquid cooling device 7a to cool the wafer can greatly shorten the cooling time. However, this method not only makes the structure of the load locking chamber 2a more complex, but also makes the control process more complex because the liquid cooling device 7a needs to be raised and lowered to achieve cooling.

[0037] In addition, after the process is completed, some corrosive gases such as hydrogen fluoride and ammonia will remain on the wafer. During the cooling process, these residual corrosive gases will also volatilize in the load locking chamber 2a, which will cause certain corrosion to the internal structure of the load locking chamber 2a and the robot arm. Neither natural cooling nor liquid cooling can remove these gases, nor can it avoid the problem of corrosion of the internal structure of the load locking chamber 2a.

[0038] To solve the above technical problems, such as Figures 4 to 6As shown, this utility model discloses a load locking chamber, including: a chamber body 10 and a cooling nozzle 20. The chamber body 10 has a bearing surface for bearing a wafer 100 inside; the cooling nozzle 20 is disposed inside the chamber body 10 and above the bearing surface, the orthographic projection of the cooling nozzle 20 on the bearing surface covers the orthographic projection of the wafer 100 on the bearing surface, and the cooling nozzle 20 is used to connect to a gas source and spray cooling gas onto the surface of the wafer 100.

[0039] When using, such as Figure 5 As shown, after the high-temperature wafer 100 is placed on the support surface, a lower-temperature cooling gas can be sprayed onto the surface of the wafer 100 through the cooling nozzle 20. Upon contact with the surface of the wafer 100, the cooling gas exchanges heat with the wafer 100, thereby lowering the surface temperature. Simultaneously, because the cooling nozzle 20 continuously sprays low-temperature gas onto the surface of the wafer 100, new cooling gas continuously exchanges heat with the wafer 100, and the cooled gas that has undergone heat exchange is displaced by the new cooling gas, thus continuously lowering the temperature of the wafer 100. Furthermore, during the flow of the cooling gas, volatile corrosive gases on the surface of the wafer 100 can be blown away, thereby cleaning the surface of the wafer 100. Moreover, the corrosive gases are diluted by the cooling gas, reducing corrosion to the internal structure of the chamber body 10.

[0040] In actual machine testing, under the same initial temperature, the wafer 100 was cooled to the same temperature by the existing natural cooling, liquid cooling and the gas cooling method of this invention. The cooling time of this invention is between that of natural cooling and liquid cooling. Although the cooling time of this invention is longer than that of liquid cooling, the difference is not significant. Compared with the time of natural cooling, it is shortened by nearly two-thirds. At the same time, the structure is simpler than that of liquid cooling, and there is no need for complex processes such as separate control of liquid cooling system such as lifting motor. It has lower cost and higher reliability.

[0041] The load-locking chamber of this invention uses cooling nozzles 20 installed within the chamber body 10 to blow cooler gas onto the surface of the wafer 100. The temperature difference between the cooler gas and the high-temperature wafer 100 effectively removes heat generated by the wafer, thus cooling it. Compared to water-cooling structures, this invention has a simpler structure and requires no complex control processes. Furthermore, it is more efficient than natural cooling of the wafer 100, reducing overall manufacturing costs while increasing production efficiency.

[0042] Furthermore, by installing cooling nozzles 20 inside the chamber body 10, the cooling gas ejected from the cooling nozzles 20 can also clean the corrosive gases remaining on the surface of the wafer 100, reducing corrosion to the internal structure of the chamber body 10 and components such as the robotic arm. This prevents the spread of corrosive gases, reduces corrosion to other mechanisms of the machine and contamination of the process wafer 100 with impurities, and improves the overall service life of the machine.

[0043] like Figure 6 As shown, the cooling nozzle 20 has a flow equalization cavity 23 inside, and the surface of the cooling nozzle 20 has jet holes 221 and air inlets 211 that are respectively connected to the flow equalization cavity 23. Multiple jet holes 221 are evenly distributed on the side of the cooling nozzle 20 facing the bearing surface, and the air inlets 211 are used to connect to a gas source. By providing multiple jet holes 221 on the side of the cooling nozzle 20 facing the bearing surface, and by ensuring that the multiple jet holes 221 are evenly distributed, the cooling gas can flow evenly to the wafer 100, forming a uniform airflow field above the wafer 100, thereby uniformly cooling the wafer 100. The temperature of the flowing cooling gas is approximately 22-23°C, while the temperature of the high-temperature wafer 100 is approximately 200°C. Using a cooling gas with a temperature difference significantly greater than that of the wafer 100 can effectively improve the cooling efficiency of the wafer 100 and shorten the cooling time.

[0044] By setting a uniform flow cavity 23 inside the cooling nozzle 20, the high-pressure cooling gas entering the cooling nozzle 20 can be depressurized and diffused through the uniform flow cavity 23, thereby making the cooling gas blown out by the cooling nozzle 20 more uniform. In addition, by setting multiple jet holes 221, the flow rate of the cooling gas blown out by the cooling nozzle 20 can be avoided to be too high, reducing the risk of the wafer 100 being displaced under the action of the cooling gas.

[0045] like Figure 6 As shown, the cooling nozzle 20 includes an upper cover 21 and an air distribution plate 22. The upper cover 21 is disposed inside the chamber body 10 and fixedly connected to the chamber body 10. An air inlet 211 is provided on the side of the upper cover 21 facing away from the bearing surface. The air distribution plate 22 is disposed on the side of the upper cover 21 facing the bearing surface. The upper cover 21 is fastened onto the air distribution plate 22 to form a uniform flow cavity 23. Multiple air jet holes 221 are evenly disposed on the air distribution plate 22. Compared with the liquid cooling method in the prior art, the cooling nozzle 20 of this utility model has a simpler structure and higher cooling efficiency.

[0046] It is understandable that the top cover 21 has a diffusion groove 212 on the side facing the bearing surface, the air inlet 211 extends to the bottom of the diffusion groove 212, and the surface of the air distribution plate 22 facing away from the bearing surface and the diffusion groove 212 form a flow distribution cavity 23.

[0047] For example, the diffusion groove 212 is a circular groove, the diameter of which is slightly smaller than the diameter of the gas distribution disk 22, such as... Figure 7 As shown, the depth H2 of the diffusion groove 212 is 2-8 mm. If H2 < 2 mm, the uniform flow cavity 23 formed between the upper cover 21 and the uniform flow plate 22 is too narrow, resulting in greater resistance during cooling gas diffusion, which is not conducive to cooling gas diffusion. If H2 > 8 mm, the uniform flow cavity 23 formed between the upper cover 21 and the uniform flow plate 22 is too large, therefore, the cooling gas diffusion speed is slow, which also affects the diffusion effect. Therefore, by setting the depth H2 of the diffusion groove 212 to 2-8 mm, it can be ensured that the cooling gas can diffuse quickly and effectively, making the gas output from each jet hole 221 more uniform. Preferably, H2 = 5 mm.

[0048] When the cooling gas enters the uniform flow cavity 23 from the air inlet 211, the cross-sectional area of ​​the uniform flow cavity 23 increases, which slows down and buffers the cooling gas and allows it to diffuse fully within the uniform flow cavity 23. This ensures that the cooling gas flows evenly from the air jet 221, so that the cooling effect is consistent at every location on the surface of the wafer 100. In other words, the overall cooling rate of the wafer 100 is consistent, thus avoiding problems such as deformation, bouncing, and displacement of the wafer 100 caused by inconsistent cooling.

[0049] like Figure 8 As shown, all jet holes 221 are divided into multiple jet hole groups. Jet holes 221 within the same jet hole group are spaced apart circumferentially on the gas distribution disk 22. Different jet hole groups are spaced apart radially from the inside to the outside on the gas distribution disk 22, with the outermost jet hole groups containing more jet holes 221. By setting multiple jet hole groups, the cooling gas can be ejected more evenly, resulting in a more uniform airflow field and thus more uniform cooling of the wafer 100, thereby improving the quality of the wafer 100. Furthermore, since the cooling gas diffuses from the center outwards within the flow distribution cavity 23, by increasing the number of jet holes 221 in the jet hole groups closer to the outer periphery of the gas distribution disk 22, the total cross-sectional area of ​​all jet holes 221 near the outer periphery of the gas distribution disk 22 is increased. This makes the flow rate of the cooling gas between the center and the outer periphery of the gas distribution disk 22 more consistent, resulting in a more uniform cooling effect.

[0050] Furthermore, according to the fluid dynamics formula Q = V × S, which relates gas velocity to cross-sectional area, where Q is the fluid volumetric flow rate, V is the fluid velocity, and S is the cross-sectional area of ​​the pipe, when the fluid velocity is less than the speed of sound, the larger the cross-sectional area of ​​the pipe, the lower the velocity; conversely, the smaller the cross-sectional area of ​​the pipe, the higher the velocity. For example... Figure 6As shown, cooling gas enters the uniform flow chamber 23 through the inlet 211, diffuses, and exits the uniform flow chamber 23 through the jet hole 221. Within the same time interval, whenever new cooling gas enters the uniform flow chamber 23, some cooling gas is ejected from the jet hole 221. That is, within the same time interval, the volumetric flow rate of cooling gas entering the uniform flow chamber 23 through the inlet 211 and the volumetric flow rate of cooling gas exiting the uniform flow chamber 23 through the jet hole 221 are the same. Therefore, with the diameter D2 of the inlet 211 remaining constant, increasing the number of jet holes 221 (n) and / or increasing the diameter D3 of each jet hole 221 can increase the total cross-sectional area of ​​all jet holes 221. This reduces the flow velocity of the cooling gas in each jet hole 221 relative to before the number of jet holes 221 increases, thereby preventing excessive flow velocity from causing wafer 100 to shift. Conversely, with a greater number of jet holes 221 n and a constant diameter D3 for each jet hole 221, a smaller diameter D2 for the air inlet 211 can also reduce the flow rate of cooling gas in each jet hole 221 relative to the air inlet 211 before it becomes smaller, thereby preventing excessive flow rate from causing wafer 100 to shift.

[0051] Therefore, to ensure that the cooling gas flow rate of each jet hole 221 can both blow away the corrosive gas on the surface of the wafer 100 and prevent the wafer 100 from being deflected, the relationship between the diameter D2 of the air inlet 211, the number n of all jet holes 221, and the diameter D3 of each jet hole 221 must satisfy the following condition: D2 2 / (n×D3 2 The value range of ) is 4-64.

[0052] The gas distribution disk 22 is the same size as the wafer 100, with a diameter D1 ranging from 100 to 300 mm. If the size of the gas distribution disk 22 is less than 100 mm, it cannot cover the smallest wafer 100, and the corresponding jet holes 221 cannot cover the wafer, resulting in uneven cooling of the wafer 100 by the cooling gas. If the size of the gas distribution disk 22 is greater than 300 mm, although it will not have an adverse effect on the diffusion of the cooling gas, it will lead to increased costs and may also interfere with other components of the load locking chamber, which is not conducive to installation and maintenance.

[0053] exist Figure 6 and Figure 7 In the illustrated embodiment, the number of jet hole groups ranges from 15 to 30, and the total number of jet holes 221 in all jet hole groups is n, where n ranges from 100 to 350. The same jet hole group is arranged in a ring to ensure the uniformity of the cooling gas in the circumferential direction. The number of jet holes in different jet hole groups can be the same or different. For example, in this embodiment, in the radial direction of the air distribution disk 22, the jet hole groups closer to the center have fewer jet holes 221, while the jet hole groups closer to the outer edge have more jet holes 221.

[0054] Furthermore, the number of all jet hole groups is positively correlated with the number of all jet holes 221. In other words, the fewer the number of jet holes 221, the fewer the jet hole groups, and the more the number of jet holes 221, the more the jet hole groups. For example, if the number of jet holes 221, n, is 100, it can be divided into 15 jet hole groups; if the number of jet holes 221, n, is 350, it can be divided into 30 jet hole groups. The purpose of this arrangement is to ensure that the spacing between adjacent jet hole groups is within the range of 5-10 mm. This maximizes the radial uniformity of the airflow and prevents the wafer 100 from being displaced due to the concentrated force of the cooling gas.

[0055] If the number of jet hole groups is less than 15, on the one hand, the gap between the corresponding jet hole groups will be greater than 10mm, which will result in some areas on wafer 100 not being cooled by the cooling gas, resulting in uneven cooling effect. On the other hand, it may also lead to a decrease in the number of jet holes 221. If the number of jet hole groups is greater than 30, the corresponding jet hole group spacing will be less than 5mm, which will make the distance between the jet hole groups too concentrated.

[0056] In this embodiment, the value of D2 ranges from 75 to 80 mm, and the diameter D3 of each jet hole 221 ranges from 1 to 2 mm. When D2 = 75 mm, D3 = 2 mm, and n = 350, D2 2 / (n×D3 2 The ratio is 4; at this time, the difference between the total cross-sectional area of ​​all jet holes 221 and the cross-sectional area of ​​the inlet 211 is minimal. If the ratio is less than 4, the flow rate of the cooling gas in each jet hole 221 will be too low, failing to blow away the corrosive gas remaining on the surface of wafer 100, thus hindering the cleaning of the wafer 100 surface. When D2 = 80, D3 = 1mm, and n = 100, D2 2 / (n×D3 2 The ratio is 64. At this time, the total cross-sectional area of ​​all jet holes 221 differs from that of the air inlet 211 by the largest difference. If the ratio is greater than 64, it will cause the cooling gas flow rate in each jet hole 221 to be too high, thereby increasing the risk of the wafer 100 being blown off course.

[0057] In other words, by setting the diameter D2 of the air inlet 211 to 75-80mm, the number of air jets 221 to n = 100-350, and the diameter D3 of each air jet 221 to 1-2mm, the system ensures that the wafer 100 is covered, resulting in more uniform cooling. Simultaneously, the system ensures that the cooling gas flow rate will not deflect the wafer 100, and that the cooling gas will also remove any corrosive gases remaining on the surface of the wafer 100, thus guaranteeing a cleanliness effect.

[0058] For example, the gas distribution disk 22 has a diameter D1 = 300 mm, consistent with the size of the wafer 100. It contains 29 groups of jet holes, totaling 336 jet holes 221, each with a diameter D3 of 1 mm. The jet holes are arranged in a ring shape, spaced apart from the inside out, to ensure the uniformity of the cooling gas in the circumferential direction. The spacing between adjacent jet hole groups is 10 mm.

[0059] like Figure 9 As shown, the load locking chamber also includes a diffuser 30, a filter 40, and a flow controller 50, which are connected in sequence via pipelines.

[0060] The diffuser section 30 is connected to the cooling nozzle 20. The diffuser section 30 is used to provide cooling gas into the cooling nozzle 20 and diffuse the provided cooling gas into the interior of the cooling nozzle 20. That is, the diffuser section 30 is used to provide cooling gas into the uniform flow cavity 23. By setting the diffuser section 30, the cooling gas with higher pressure and flow rate can be initially buffered and diffused by the diffuser section 30 before entering the uniform flow cavity 23 of the cooling nozzle 20 for secondary buffering and diffusion, so that the gas sprayed from the cooling nozzle 20 is more uniform, thereby enabling the wafer 100 to be cooled uniformly.

[0061] For example, such as Figure 10 As shown, the diffuser 30 includes: a body 31, which has an inlet 311 and an outlet 312. The inlet 311 of the body 31 is used to communicate with an air source, and the outlet 312 of the body 31 is used to communicate with a cooling nozzle 20. The body 31 has a diffuser cavity 313 inside, and the inlet 311 and the outlet 312 of the body 31 are respectively connected to the diffuser cavity 313. In the direction from the inlet 311 to the outlet 312 of the body 31, the cross-sectional area of ​​the diffuser cavity 313 gradually increases.

[0062] In other words, such as Figure 10 As shown, the body portion 31 has a first end and a second end. The inlet 311 of the body portion 31 is located at the first end, and the outlet 312 of the body portion 31 is located at the second end. The diffuser cavity 313 forms a funnel shape from the first end to the second end of the body portion 31. According to the relationship between fluid velocity and cross-sectional area, when the fluid velocity is less than the speed of sound, the larger the cross-sectional area of ​​the pipe through which the fluid flows, the lower the velocity; conversely, the smaller the cross-sectional area of ​​the pipe through which the fluid flows, the higher the velocity. Therefore, the diffuser cavity 313 can reduce the velocity of the cooling gas entering the cooling nozzle 20.

[0063] Specifically, such as Figure 10As shown, the cooling gas enters the diffusion chamber 313 from the inlet 311 of the main body 31 and leaves the diffusion chamber 313 from the outlet 312 of the main body 31 after diffusion. Therefore, in this embodiment, the diameter D4 of the inlet 311 of the main body 31 is smaller than the diameter D5 of the outlet 312 of the main body 31, that is, D4 < D5. By adjusting the ratio relationship between D4 and D5, the flow rate of the cooling gas at the outlet 312 of the main body 31 can be controlled. When D5 / D4 increases, it means that the diameter gap between the inlet 311 and the outlet 312 of the main body 31 increases. Therefore, the cross-sectional area gap between the inlet 311 and the outlet 312 also increases, resulting in a further decrease in the flow rate of the cooling gas; conversely, when D5 / D4 decreases, it means that the diameter gap between the inlet 311 and the outlet 312 of the main body 31 decreases. Therefore, the cross-sectional area gap between the inlet 311 and the outlet 312 also decreases, resulting in a further increase in the flow rate of the cooling gas.

[0064] In some preferred embodiments, the value range of D5 / D4 is 3 ≤ D5 / D4 ≤ 18. Among them, the diameter D4 of the inlet 311 of the diffusion chamber 313 ranges from 5 - 10 mm, and the diameter D5 of the outlet 312 of the diffusion chamber 313 ranges from 30 - 90 mm. Exemplarily, D4 = 6 mm and D5 = 60 mm.

[0065] As Figure 10 shown, in this embodiment, the diffusion chamber 313 forms a horn-shaped hole from the first end to the second end of the main body 31. In other words, the diffusion chamber 313 has a reduced-diameter section 313a and an equal-diameter section 313b that are sequentially connected in its axial direction. The reduced-diameter section 313a extends to the first end of the diffusion chamber 313, and the equal-diameter section 313b extends to the second end of the diffusion chamber 313 and is connected to the outlet 312 of the main body 31. By providing the reduced-diameter section 313a, the cooling gas can be guided to avoid the formation of eddy currents during the diffusion process, which would cause energy loss of the air flow and affect the diffusion effect. By providing the equal-diameter section 313a, the air flow can be guided to form a uniform flow field, which is beneficial to the diffusion of the cooling gas after it enters the uniform flow chamber 23.

[0066] As Figure 10As shown, the inner wall of the variable diameter section 313a forms an angle A with the first end face of the diffuser cavity 313, and 90°≤A<180°. It can be seen that the inner wall of the variable diameter section 313a forms a right angle or an obtuse angle with the first end face of the diffuser cavity 313, thereby reducing the vortices formed when the airflow passes through the angle A. In some embodiments, the angle A ranges from 120° to 150°, for example: 120°, 145°, 150°. Furthermore, the height H1 of the diffuser cavity 313 ranges from 3 to 10 mm. If the height H1 of the diffuser cavity 313 is too small, the variable diameter section 313a is too short, and it cannot adequately guide the cooling gas, which is detrimental to the diffusion of the cooling gas. If the height H1 of the diffuser cavity 313 is too large, the angle A will become smaller, making it easier for vortices to be generated within the diffuser cavity 313, resulting in energy loss of the cooling gas. Therefore, the height H1 of the diffuser cavity 313 ranges from 3 to 10 mm.

[0067] If the cooling gas velocity entering the uniform flow cavity 23 is too high, the cooling gas inside the uniform flow cavity 23 will not be able to effectively buffer and diffuse, causing airflow disturbance inside the uniform flow cavity 23. This leads to uneven pressure inside the cooling nozzle 20, resulting in uneven distribution of the cooling gas ejected from the cooling nozzle 20, affecting the heat dissipation efficiency of the wafer 100, and may even cause damage to the wafer 100 due to uneven heat dissipation. However, by setting up the diffusion cavity 313, the gas velocity at the outlet 312 of the body 31 can be reduced from 7-8 m / s to about 3-5 m / s. By reducing the velocity of the cooling gas entering the uniform flow cavity 23, it is beneficial for the secondary diffusion of the cooling gas inside the uniform flow cavity 23, making the pressure inside the cooling nozzle 20 more uniform, thus making the distribution of the cooling gas ejected from the cooling nozzle 20 more uniform, and ensuring the uniformity of heat dissipation of the wafer 100.

[0068] By combining the diffuser 313 and the uniform flow 23, the flow velocity of the cooling gas in the jet orifice 221 can be reduced to the optimal flow velocity of 3 m / s, effectively cooling the wafer 100 while preventing wafer 100 from shifting.

[0069] In actual machine testing, under the same initial temperature, the wafer 100 was cooled to the same temperature using existing natural cooling, liquid cooling, and the gas cooling method of this invention. Natural cooling took 106 seconds, liquid cooling took 22 seconds, while the gas cooling method of this invention, at a pressure of 80 psg and a flow rate of 1000 sccm, took 37 seconds. This shows that although the cooling method of this invention takes longer than liquid cooling, the difference is not significant. Compared to natural cooling, it reduces the time by nearly two-thirds. Furthermore, the structure is simpler than liquid cooling, eliminating the need for complex processes such as separate control of the liquid cooling system (e.g., lifting motors), resulting in lower cost and higher reliability. Figure 10 As shown, the diffuser 30 also includes a quick connector 32 and a connecting nut 33. The quick connector 32 is connected to the inlet 311 of the body 31 and fixed by the connecting nut 33. The inlet 311 of the body 31 is connected to the filter 40 through the quick connector 32.

[0070] It is understandable that, such as Figure 4 As shown, the chamber body 10 includes a top cover 11, a side wall 12, and a base 13. The base 13 has a support surface for supporting the wafer 100. The top cover 11 is disposed above the base 13, that is, the base 13 is disposed below the top cover 11. The side wall 12 connects the base 13 and the top cover 11. The base 13, the side wall 12, and the top cover 11 form the chamber body 10.

[0071] For example, such as Figure 9 As shown, the top cover 11 has a first side 111 facing the bearing surface and a second side 112 away from the bearing surface. The top cover 11 is provided with a connecting hole 113 extending from its first side 111 to its second side 112. The cooling nozzle 20 is fixedly connected to the first side 111 of the top cover 11, and the diffuser 30 is located on the second side 112 of the top cover 11. The diffuser 30 and the cooling nozzle 20 are connected through the connecting hole 113.

[0072] like Figure 6 As shown, the cooling nozzle 20 is connected to the top cover 11. Specifically, the upper cover 21 is fixedly connected to the first side 111 of the top cover 11. A second sealing groove 213 is provided on the side of the upper cover 21 away from the bearing surface. The second sealing groove 213 surrounds the upper air inlet 211, and a sealing ring is installed inside the second sealing groove 213. During assembly, the air inlet 211 aligns with and connects to the connecting hole 113, and the sealing ring abuts against the second sealing groove 213 and the first side 111 of the top cover 11, thereby achieving a sealed fit between the upper cover 21 and the top cover 11 and preventing cooling gas leakage.

[0073] like Figure 10As shown, a first sealing groove 314 is provided at the second end of the main body 31. The first sealing groove 314 surrounds the outlet 312 of the main body 31, and a sealing ring is installed in the first sealing groove 314. During assembly, the second end of the main body 31 abuts against the second side 112 of the top cover 11, the outlet 312 of the main body 31 mates with and connects to the connecting hole 113, and the sealing ring abuts between the main body 31 and the top cover 11, thereby achieving a sealed fit between the main body 31 and the top cover 11 and preventing the leakage of cooling gas.

[0074] It is understood that in this embodiment, the main body 31 abuts against the top cover 11 under the action of external force, thereby achieving relative fixation. However, this is not limiting. In some other embodiments not shown in the figure, the main body 31 and the top cover 11 can also be fixedly connected by threads. Any connection method that can achieve relative fixation between the main body 31 and the top cover 11 is within the protection scope of this utility model.

[0075] like Figure 9 As shown, filter 40 is connected between diffuser 30 and gas source for filtering cooling gas. By setting filter 40, impurity particles carried in the cooling gas can be filtered out, preventing impurity particles from clogging jet hole 221 or scratching wafer 100.

[0076] like Figure 9 As shown, the flow controller 50 is connected between the diffuser 30 and the gas source to control the flow rate of the cooling gas, so that the flow rate of the cooling gas ejected from the cooling nozzle 20 is within a preset range. For example, the flow controller 50 is a mass flow controller 50, which can accurately control the flow rate through the pipeline by setting a mass flow meter, ensuring that the cooling time of the wafer 100 is controllable.

[0077] Understandably, the load-locking chamber also includes a control device. This control device is connected to the flow controller 50, which allows the flow controller 50 to adjust the pressure of the cooling gas to a suitable preset range, such as 85–120 psig, thereby achieving optimal purging performance.

[0078] For example, the control device can be a host computer, and the flow meter can receive control commands from the host computer through the DeviceNet communication protocol to enable or disable the flow function and achieve precise gas flow control.

[0079] It is understandable that, such as Figure 11 As shown, the bottom of the chamber body 10 is provided with a pressure detection hole 131, a clean gas outlet 132, an exhaust hole 133 and a clean gas inlet 134 respectively; the pressure detection hole 131, the clean gas outlet 132, the exhaust hole 133 and the clean gas inlet 134 are distributed circumferentially at intervals.

[0080] Specifically, the base 13 of the chamber body 10 is provided with a pressure detection hole 131, a cleaning gas outlet 132, an exhaust hole 133, and a cleaning gas inlet 134. A rectangular groove is provided on the base 13, and the pressure detection hole 131, cleaning gas outlet 132, exhaust hole 133, and cleaning gas inlet 134 are located at the bottom of the rectangular groove and distributed at its four corners. The cleaning gas inlet 134 is used to fill the chamber body 10 with cleaning gas, and the cleaning gas and particulate impurities are discharged through the cleaning gas outlet 132. During the cooling of the wafer 100, the cooling gas after heat exchange with the wafer 100 can be discharged through the exhaust hole 133, so that the pressure inside the chamber body 10 is maintained within a preset range. This distribution method can maintain the pressure stability inside the chamber body 10 during the cooling process, avoiding excessive pressure fluctuations that could cause wafer displacement or damage.

[0081] The dimensions of the pressure detection port 131 range from 37 to 47 mm, the dimensions of the clean gas outlet port 132 range from 21 to 31 mm, the dimensions of the exhaust port 133 range from 45 to 55 mm, and the dimensions of the clean gas inlet port 134 range from 21 to 31 mm.

[0082] It should be noted that the size of the cleaning gas outlet 132 and the cleaning gas inlet 134 are the same, and the distance between the cleaning gas outlet 132 and the cleaning gas inlet 134 is not less than 200mm. By making the size of the cleaning gas outlet 132 and the cleaning gas inlet 134 the same, it can be ensured that the intake and exhaust volumes are basically consistent when cleaning the inside of the chamber body 10, thereby maintaining the pressure stability inside the chamber body 10. In addition, by ensuring that the distance between the cleaning gas outlet 132 and the cleaning gas inlet 134 is not less than 200mm, it can be prevented that the cleaning gas entering from the cleaning gas inlet 134 can be directly discharged from the cleaning gas outlet 132.

[0083] For example, the size range of pressure detection port 131 is 42 mm, the size range of clean gas outlet port 132 is 26 mm, the size range of exhaust port 133 is 50 mm, and the size range of clean gas inlet port 134 is 26 mm.

[0084] The distance between the clean gas outlet 132 and the clean gas inlet 134 can be 200mm, 210mm, 220mm, etc.

[0085] According to another aspect of the present invention, a semiconductor process apparatus is also disclosed, comprising a semiconductor equipment front-end module, a transmission chamber, a process chamber, and the aforementioned load-locking chamber, wherein the load-locking chamber is connected between the transmission chamber and the semiconductor equipment front-end module, and the process chamber is connected to the transmission chamber.

[0086] According to another aspect of the present invention, a method for inflating the load-locking chamber described above is also disclosed, wherein air is inflated into the chamber body 10 through a cooling nozzle 20 and the wafer 100 is cooled.

[0087] After the process is completed, the vacuum robot removes wafer 100 from the process chamber and places it into the load-locking chamber via the transfer chamber. At this time, the load-locking chamber is in a vacuum state and needs to be filled with gas, while wafer 100 is at a high temperature and needs to be cooled. Using the gas filling method of this invention, gas is filled into the chamber body 10 through a cooling nozzle, and cooler gas is blown onto the surface of wafer 100 through a cooling nozzle 20. The temperature difference between the cooler gas and the high-temperature wafer 100 is used to remove the heat generated by the high-temperature wafer 100, thus achieving the purpose of cooling wafer 100. At the same time, the cooling gas can also increase the gas pressure inside the chamber body 10, making the gas pressure inside the process chamber the same as the atmospheric environment, thereby realizing the transition from vacuum to atmospheric environment in the load-locking chamber. This method combines the cooling and gas filling steps into one, thereby simplifying the operation process of the load-locking chamber, reducing waiting time, and improving production efficiency.

[0088] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this utility model, and the utility model is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of this utility model, and these modifications and improvements are also considered to be within the protection scope of this utility model.

Claims

1. A load-locking chamber, characterized in that, include: The chamber body (10) has a support surface inside for supporting the wafer (100); A cooling nozzle (20) is disposed inside the chamber body (10) and located above the bearing surface. The orthographic projection of the cooling nozzle (20) on the bearing surface covers the orthographic projection of the wafer (100) on the bearing surface. The cooling nozzle (20) is used to connect to a gas source and spray cooling gas onto the surface of the wafer (100). The cooling nozzle (20) has a flow equalization cavity (23) inside. The surface of the cooling nozzle (20) is provided with jet holes (221) and air inlets (211) that are respectively connected to the flow equalization cavity (23). There are multiple jet holes (221) and they are evenly distributed on the side of the cooling nozzle (20) facing the bearing surface. The air inlets (211) are used to communicate with the air source. The relationship between the diameter D2 of the air inlet (211), the number n of all jet holes (221), and the diameter D3 of each jet hole (221) satisfies that D2 2 / (n×D3 2 The value range of ) is 4-64.

2. The load-locking chamber according to claim 1, characterized in that, The bottom of the chamber body (10) is provided with a pressure detection hole (131), a clean gas outlet (132), an exhaust hole (133) and a clean gas inlet (134). The pressure detection hole (131), the clean gas outlet (132), the exhaust hole (133), and the clean gas inlet (134) are distributed circumferentially at intervals.

3. The load-locking chamber according to claim 1, characterized in that, The cooling nozzle (20) includes: The upper cover (21) is disposed inside the chamber body (10) and fixedly connected to the chamber body (10). The upper cover (21) has the air inlet (211) on the side opposite to the bearing surface. A uniform air distribution plate (22) is disposed on the side of the upper cover (21) facing the bearing surface. The upper cover (21) is fastened to the uniform air distribution plate (22) and forms the uniform flow cavity (23). A plurality of jet holes (221) are evenly disposed on the uniform air distribution plate (22).

4. The load-locking chamber according to claim 3, characterized in that, The top cover (21) is provided with a diffusion groove (212) on the side facing the bearing surface. The air inlet (211) extends to the bottom of the diffusion groove (212). The surface of the air distribution plate (22) facing away from the bearing surface and the diffusion groove (212) form the flow distribution cavity (23). The depth H2 of the diffusion groove (212) is in the range of 2mm≤H2≤8mm.

5. The load-locking chamber according to claim 4, characterized in that, All the jet holes (221) are divided into multiple jet hole groups. The jet holes (221) in the same jet hole group are distributed at intervals in the circumferential direction of the air distribution disk (22). Different jet hole groups are distributed at intervals from the inside to the outside in the radial direction of the air distribution disk (22), and the jet holes (221) in the jet hole group that is further out are more numerous.

6. The load-locking chamber according to claim 1, characterized in that, The load-locking chamber further includes: A diffuser (30) is connected to the cooling nozzle (20). The diffuser (30) is used to provide cooling gas into the cooling nozzle (20) and diffuse the provided cooling gas into the interior of the cooling nozzle (20).

7. The load-locking chamber according to claim 6, characterized in that, The diffuser (30) includes: The body part (31) has an inlet (311) and an outlet (312), the inlet (311) of the body part (31) is used to communicate with an air source, and the outlet (312) of the body part (31) is used to communicate with the cooling nozzle (20). The body part (31) has a diffusion cavity (313) inside. The inlet (311) and outlet (312) of the body part (31) are respectively connected to the diffusion cavity (313), and the cross-sectional area of ​​the diffusion cavity (313) gradually increases in the direction from the inlet (311) to the outlet (312) of the body part (31).

8. The load-locking chamber according to claim 7, characterized in that, The diameter of the inlet (311) of the body part (31) is D4, the diameter of the outlet (312) of the body part (31) is D5, and the value range of D5 / D4 is 3≤D5 / D4≤18.

9. The load-locking chamber according to claim 7, characterized in that, The diffusion cavity (313) has a variable diameter section (313a) and a constant diameter section (313b) connected in sequence in its axial direction. The variable diameter section (313a) extends to a first end of the diffusion cavity (313), and the constant diameter section (313b) extends to a second end of the diffusion cavity (313) and communicates with the outlet (312) of the body part (31). The inner wall of the variable diameter section (313a) forms an angle A with the first end face of the diffusion cavity (313), and 90°≤A<180°.

10. A semiconductor process apparatus, characterized in that, It includes a semiconductor device front-end module, a transmission chamber, a process chamber, and a load-locking chamber as described in any one of claims 1 to 9, wherein the load-locking chamber is connected between the transmission chamber and the semiconductor device front-end module, and the process chamber is connected to the transmission chamber.

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