Vapor phase growth equipment

Abstract

The utility model discloses vapor phase growth equipment. The vapor phase growth equipment comprises a process chamber, a base, a spraying main body, a rotary gas supply device and a rotary heat conduction assembly, the spraying main body is positioned in the process chamber and is opposite to the base, and the rotary gas supply device is arranged at the top of the process chamber in a dynamic sealing manner, extends towards the spraying main body and is communicated with the spraying main body, so that the spraying main body rotates in the process of providing process gas, and the injection direction of the process gas can be flexibly controlled and dynamically adjusted to improve the uniformity of film growth. Besides, the rotary heat-conducting assembly is arranged at the bottom of the process chamber in a motive seal mode and extends towards the base to the position below the base, the heating device is arranged below the base, and the heat-conducting device is arranged at the top of the rotary heat-conducting assembly and located between the base and the heating device, so that the rotary heat-conducting assembly drives the heat-conducting device to rotate in the rotating process. The uniformity of a temperature field between the base and the heating device is facilitated, so that the uniformity of film growth is further improved by improving the temperature uniformity of the surface of the substrate.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor equipment technical field especially relates to a gas phase growth equipment. BACKGROUND

[0002] The gas injection device on the gas phase growth equipment, such as MOCVD equipment, has many functions, it not only controls the gas flow and distribution accurately, promotes gas mixing and reaction, also is related to the film quality and uniformity.

[0003] The traditional gas phase growth equipment usually adopts fixed gas injection device, and the fixed gas injection device sprays process gas to the heated wafer to generate semiconductor film. However, because the process gas injection direction is fixed, it is not conducive to flexible control to realize the uniformity of film growth due to the influence of gas distribution, temperature gradient and other factors.

[0004] In addition, in the gas phase growth equipment, a heater is arranged below the susceptor to heat the susceptor, and the heat transfer of the susceptor to the wafer realizes the heating of the wafer. Similarly, due to the influence of factors such as temperature field and gas flow field, the temperature of the wafer surface in the process has non-uniformity, which will affect the film forming quality of the wafer surface.

[0005] Therefore, it is necessary to provide a new gas phase growth equipment to solve the above problems existing in the prior art. UTILITY MODEL CONTENT

[0006] The utility model aims at providing a kind of gas phase growth equipment, it is favorable to improve film uniformity.

[0007] To achieve the above object, the technical scheme of the utility model is as follows:

[0008] A kind of gas phase growth equipment, including process chamber;

[0009] Susceptor, be in the process chamber, for carrying substrate;

[0010] Spray main body, located in the process chamber, with the susceptor is oppositely arranged, to provide process gas to the substrate;

[0011] Rotary gas supply device, dynamic seal is located at the top of the process chamber, extends towards the spray main body, with the spray main body is communicated, to provide the process gas to the spray main body;

[0012] Rotary heat conduction component, dynamic seal is located at the bottom of the process chamber, extends to the susceptor below towards the susceptor;

[0013] Heating device, be located below the susceptor, the rotary heat conduction component top includes heat conduction device, the heat conduction device is located between the susceptor and the heating device.

[0014] By adopting the technical scheme, the spray body is located in the process chamber and arranged opposite to the susceptor, the rotary gas supply device is arranged in the top of the process chamber and extends towards the spray body to communicate with the spray body, so that the spray body rotates in the process of supplying process gas, the injection direction of the process gas can be dynamically adjusted and flexibly controlled, thereby optimizing the distribution of reactants in the process chamber and improving the uniformity of film growth. In addition, the rotary heat conduction assembly is arranged in the bottom of the process chamber and extends towards the susceptor below the susceptor, the heating device is arranged below the susceptor, the top of the rotary heat conduction assembly comprises a heat conduction device, and the heat conduction device is located between the susceptor and the heating device, so that the heat conduction device rotates in the process of rotating the rotary heat conduction assembly, which is beneficial to the uniformity of the temperature field between the susceptor and the heating device, thereby further improving the uniformity of film growth by improving the temperature uniformity of the substrate surface.

[0015] Optionally, the rotary gas supply device comprises a top rotary sealing device and a gas supply pipeline; the top rotary sealing device surrounds the gas supply pipeline and is arranged in the top of the process chamber to drive the spray body to move around the axis of the gas supply pipeline; and the gas supply pipeline penetrates the top of the process chamber and is connected and communicated with the spray body.

[0016] Optionally, the top rotary sealing device comprises a magnetic fluid sealing assembly.

[0017] Optionally, the rotary heat conduction assembly further comprises a bottom rotary sealing device, the bottom rotary sealing device penetrates and is arranged in the bottom of the process chamber, extends below the susceptor, and the middle of the heat conduction device is connected to the top of the bottom rotary sealing device to rotate under the driving of the bottom rotary sealing device.

[0018] Optionally, the bottom rotary sealing device comprises: a driving shaft, one end of which is rotatably arranged on the bottom wall of the process chamber, and the heat conduction device is arranged at the other end of the driving shaft; a rotary sealing assembly, which is arranged in the bottom wall of the process chamber and extends towards the susceptor, is connected with the driving shaft, and is used to drive the driving shaft to rotate so as to rotate the heat conduction device; and a bottom driving device, which is located outside the process chamber and connected with the rotary sealing assembly, is used to provide driving force.

[0019] Optionally, the rotary sealing assembly comprises a magnetic fluid sealing assembly.

[0020] Optionally, the heat conduction device extends radially along the susceptor, and the heating device is accommodated in the space between the heat conduction device and the bottom wall of the process chamber.

[0021] Optionally, the heat conduction device comprises a graphite plate.

[0022] Optionally, at least part of the surface of the heat conducting device is coated with a heat conducting coating.

[0023] Optionally, the susceptor comprises a substrate carrier for carrying the substrate, and a side support device surrounding the bottom of the substrate carrier and extending towards the bottom wall of the process chamber, and the heating device and the heat conducting device are located in a containing space surrounded by the susceptor, the side support device and the bottom wall of the process chamber. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 A structure schematic view of a gas phase growth equipment according to an embodiment of the present application;

[0025] Figure 2 A structure schematic view of a gas injection device according to an embodiment of the present application;

[0026] Figure 3 An assembly structure schematic view of a bottom rotary sealing device and a process chamber bottom plate according to an embodiment of the present application;

[0027] Figure 4 A structure schematic view of another gas phase growth equipment according to an embodiment of the present application.

[0028] REFERENCE NUMERALS:

[0029] 100, process chamber; 110, susceptor; 111, substrate carrier; 112, side support device; 120, heating device; 130, heat conducting device; 200, rotary gas supply device; 210, spraying main body; 220, top rotary sealing device; 230, gas supply pipeline; 240, top driving device; 300, rotary heat conducting assembly; 310, bottom rotary sealing device; 320, driving shaft; 330, rotary sealing assembly; 340, bottom driving device. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings by those skilled in the art to which the present application belongs. The similar words such as "comprise" used herein mean that the elements or objects before the words cover the elements or objects listed after the words and their equivalents, but do not exclude other elements or objects.

[0031] The specific embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

[0032] Embodiments of the present application provide a vapor growth apparatus for growing a semiconductor material layer by performing a vapor deposition reaction on a substrate. The vapor growth apparatus can be a chemical vapor deposition (CVD) device or a physical vapor deposition (PVD) device. The CVD device can be a plasma-enhanced chemical vapor deposition (PECVD) device, a metal-organic chemical vapor deposition (MOCVD) device, or the like. The present application will be described below with reference to a MOCVD device. It should be understood that the device is merely exemplary and the present application is not limited to this device.

[0033] The present application will be described in detail below with reference to the accompanying drawings. Figures 1 to 4 The present application will be described in detail below with reference to the accompanying drawings.

[0034] The vapor growth apparatus includes a process chamber 100, a susceptor 110 disposed in the process chamber 100, and a substrate support.

[0035] A spray body 210 is disposed in the process chamber 100 opposite the susceptor 110 and is configured to provide process gas to the substrate.

[0036] A rotary gas supply device 200 is disposed at the top of the process chamber 100 and extends toward the spray body 210, and is in communication with the spray body 210, and is configured to provide process gas to the spray body 210.

[0037] A rotary heat conduction assembly 300 is disposed at the bottom of the process chamber 100 and extends toward the susceptor 110 below the susceptor 110.

[0038] A heating device 120 is disposed below the susceptor 110, and the rotary heat conduction assembly 300 includes a heat conduction device 130 disposed at the top of the rotary heat conduction assembly 300 and located between the susceptor 110 and the heating device 120.

[0039] In some embodiments, the present application will be described in detail below with reference to the accompanying drawings. Figure 1The heating device 120 is fixedly arranged inside the process chamber 100 and is arranged between the susceptor 110 and the bottom wall of the process chamber 100, i.e. is arranged below the susceptor 110 and is arranged opposite to the susceptor 110. The fixing mode of the heating device 120 can be bolt fixing or clamping fixing, which is not limited herein, and it is necessary that the heating device 120 can provide heat to the susceptor 110 in the process chamber 100 to heat the susceptor 110.

[0040] In some embodiments, the heating device 120 and the susceptor 110 have a spacing therebetween so that the movement of the susceptor 110 does not interfere with the heating device 120.

[0041] In some embodiments, the heating device 120 and the bottom wall of the process chamber 100 have a spacing therebetween.

[0042] In an embodiment, the heating device 120 is selected as a resistance heater.

[0043] In some embodiments, the rotary heat conduction assembly 300 can support the heat conduction device 130 so that the heat conduction device 130 can be located between the heating device 120 and the susceptor 110.

[0044] In some embodiments, the heat conduction device 130 is rotatably arranged between the susceptor 110 and the heating device 120, the rotary heat conduction assembly 300 can drive the heat conduction device 130 to rotate in the process chamber 100, and the heat conduction device 130 has a spacing with the susceptor 110 and has a spacing with the heating device 120. The heat conduction device 130 is arranged opposite to the susceptor 110 so as to make the temperature between the susceptor 110 and the heating device 120 uniform, and the structure for driving the heat conduction device 130 to rotate is described later.

[0045] In some embodiments, the spray body 210 is arranged inside the process chamber 100, is arranged opposite to the susceptor 110, and can rotate in the process chamber 100.

[0046] In some embodiments, the rotary gas supply device 200 is dynamically sealed at the top of the process chamber 100, extends towards the spray body 210, is in communication with the spray body 210, and supplies gas to the inside of the spray body 210, so that the process gas can be supplied into the process chamber 100 through the spray body 210.

[0047] The rotary gas supply device 200 includes a top rotary sealing device 220 and a gas supply pipeline 230.

[0048] The top rotary sealing device 220 surrounds the gas supply pipeline 230 and is dynamically sealed at the top of the process chamber 100 to drive the spray body 210 to move around the axis of the gas supply pipeline 230. The gas supply pipeline 230 penetrates the top of the process chamber 100, is connected to and in communication with the spray body 210.

[0049] In some embodiments, referring to Figure 1 and Figure 2 , a top rotary sealing device 220 is disposed on a top wall of the process chamber 100 and connected to the shower body 210 to drive the shower body 210 to rotate in the process chamber 100; a gas supply pipe 230 is disposed in the top rotary sealing device 220 and penetrates through the top of the process chamber 100 and is in communication with the shower body 210 to provide process gas flowing into the process chamber 100 through the gas supply pipe 230.

[0050] In some embodiments, the top rotary sealing device 220 comprises a magnetic fluid sealing assembly which is sleeved on the top rotary sealing device 220 and connected to the process chamber to keep the top rotary sealing device 220 sealed with the process chamber 100 during rotation of the top rotary sealing device 220. The specific structure and installation of the magnetic fluid sealing assembly are conventional technical means in the art, which will not be described here.

[0051] In some embodiments, the top of the process chamber 100 is provided with a top driving device 240 which is connected to the top rotary sealing device 220 to provide driving force. In some embodiments, the top driving device 240 can be a motor or other device capable of driving. In some embodiments, the top driving device 240 can be directly connected to the top rotary sealing device 220, for example, the rotating shaft of the motor is keyed connected to the top rotary sealing device 220. In some embodiments, the top driving device 240 can be indirectly connected to the top rotary sealing device 220, for example, the rotating shaft of the motor is connected to the rotary gas supply device 200 pulley.

[0052] In some embodiments, one end of the top rotary sealing device 220 is connected to the shower body 210, so that rotation of the top rotary sealing device 220 can drive the shower body 210 to rotate. In some embodiments, the gas supply pipe 230 is directly disposed in the top rotary sealing device 220 to supply gas to the shower body 210.

[0053] In some embodiments, one of the top rotary sealing device 220 and the shower body 210 penetrates through the top plate and the two are connected to facilitate the top rotary sealing device 220 to drive the shower body 210 to rotate. In some embodiments, the top driving device 240 is connected to the top rotary sealing device 220. In some specific embodiments, the top driving device 240 is connected to the top rotary sealing device 220 by indirect connection, for example, pulley transmission.

[0054] The shower body 210 is divided into a plurality of air chambers from top to bottom, and the gas supply pipe 230 communicates with the plurality of air chambers to provide process gas flowing to the susceptor 110 through the air chambers.

[0055] In some embodiments, one end of the gas supply pipeline 230 is in communication with the plurality of gas cavities, and the other end is in communication with an external gas supply device. The gas supply device provides process gas, which flows through the gas supply pipeline 230 into the plurality of gas cavities and enters the process chamber 100 through the gas cavities. In this process, the spray body 210 rotates to make the process gas uniform, thereby improving the uniformity of film formation on the surface of the substrate.

[0056] The rotating heat conduction assembly 300 further comprises a bottom rotating sealing device 310, which is disposed through and dynamically sealed at the bottom of the process chamber 100, extends below the susceptor 110, and is connected to the top of the heat conduction device 130 in the middle to rotate under the driving of the bottom rotating sealing device 310.

[0057] The drive shaft 320 is disposed at one end of the heat conduction device 130 and rotatably disposed at the bottom wall of the process chamber 100 at the other end;

[0058] The rotating sealing assembly 330 is dynamically sealed and disposed at the bottom wall of the process chamber 100 and connected to the drive shaft 320 for driving the drive shaft 320 to rotate to rotate the heat conduction device 130;

[0059] The bottom driving device 340 is connected to the rotating sealing assembly 330 to provide driving force.

[0060] In some embodiments, referring to Figure 3 , one end of the drive shaft 320 is rotatably connected to the bottom wall of the process chamber 100, and the other end is fixedly connected to the heat conduction device 130. Specifically, when the heat conduction device 130 is disposed between the susceptor 110 and the heating device 120, one end of the drive shaft 320 is rotatably connected to the bottom wall of the process chamber 100.

[0061] In some embodiments, the cooperation between the bottom rotating sealing device 310 and the bottom wall of the process chamber 100 is necessary to ensure the sealing performance of the chamber and to realize the rotation of the heat conduction device 130 driven by the drive shaft 320.

[0062] In some embodiments, the heat conduction device 130 and the drive shaft 320 are detachably connected, for example, bolted, and the specific detachable connection mode is not limited here, as long as the drive shaft 320 can drive the heat conduction device 130 to rotate.

[0063] In some embodiments, the rotating sealing assembly 330 is dynamically sealed and disposed at the process chamber 100 and connected to the drive shaft 320 to drive the drive shaft 320 to rotate. In some embodiments, the rotating sealing assembly 330 is disposed outside the process chamber 100.

[0064] In some embodiments, the rotating sealing assembly 330 comprises a magnetic fluid sealing assembly, and the top rotating sealing device 220 is sleeved on the rotating sealing assembly 330 and connected with the process chamber 100 to keep the rotating sealing assembly 330 sealed with the process chamber 100 during rotation of the rotating sealing assembly 330. The specific installation of the magnetic fluid sealing assembly is the prior art, which is not described here.

[0065] In some embodiments, the bottom driving device 340 is selected as a motor.

[0066] In some specific embodiments, the bottom driving device 340 is directly connected with the rotating sealing assembly 330, for example, the rotating shaft of the motor is keyed connected with the driving shaft.

[0067] In some specific embodiments, the bottom driving device 340 is indirectly connected with the rotating sealing assembly 330, for example, pulleys are fixedly arranged on the rotating shaft of the motor and the driving shaft, and the two pulleys are connected by belt transmission.

[0068] The heat conducting device 130 extends radially along the base 110, and the heating device 120 is accommodated in the space between the heat conducting device 130 and the bottom wall of the process chamber 100, so as to heat the inside of the process chamber 100 and facilitate the mixing of the temperature field of the heat conducting device 130.

[0069] In some embodiments, the heat conducting device 130 is connected with the driving shaft 320 to absorb and uniformly conduct heat to the base 110.

[0070] In some embodiments, the heat conducting device 130 absorbs heat radiated by the heating device 120 and transmits the heat to the base 110.

[0071] In some specific embodiments, the heat conducting device 130 can be a graphite plate. The heat conducting device 130 (such as a graphite plate) absorbs heat from the heating device 120 and transmits the heat to the base 110, which improves the utilization efficiency of heat energy and reduces heat loss.

[0072] In some specific embodiments, at least part of the surface of the heat conducting device 130 is coated with a heat conducting coating.

[0073] In some more specific embodiments, the surface of the heat conducting device 130 can also be coated with a heat conducting coating, such as silicon carbide.

[0074] In some embodiments, the heat conducting device 130 and the driving shaft 320 are integrated.

[0075] The base 110 comprises a substrate carrier 111 and a side support 112 extending from the bottom of the substrate carrier 111 and towards the bottom wall of the process chamber 100. The heating device 120 and the heat conducting device 130 are located in a containing space surrounded by the base 110, the side support 112 and the bottom wall of the process chamber 100.

[0076] In some embodiments, with reference to Figure 4 The side support 112 is in a cylindrical shape, and one end of the side support 112 is connected to the substrate carrier 111 and the other end is connected to the bottom wall of the process chamber 100. In some specific embodiments, the top end of the side support 112 is connected to the edge of the substrate carrier 111, so that the substrate carrier 111, the side support 112 and the bottom wall of the process chamber 100 form a containing space. In some specific embodiments, the heating device 120 is arranged in the space surrounded by the substrate carrier 111, the side support 112 and the bottom wall of the process chamber 100.

[0077] In some more specific embodiments, the containing space is not in communication with the interior of the process chamber 100, so that in some application scenarios, the corrosion of the heating device 120 by the corrosive process gas and the influence of the temperature field can be avoided.

[0078] The implementation principle of the vapor phase growth equipment is that the spray body 210 supplies gas into the process chamber 100, and the spray body 210 can rotate to dynamically adjust the injection direction of the process gas, so as to optimize the distribution of the reactants in the process chamber 100 and improve the uniformity of film growth. Further, the heating device 120 is arranged below the base 110, the top of the rotating heat conducting assembly 300 comprises the heat conducting device 130, and the heat conducting device 130 is located between the base 110 and the heating device 120. During the rotation of the rotating heat conducting assembly 300, the heat conducting device 130 is rotated, which is beneficial to the uniformity of the temperature field between the base 110 and the heating device 120, so as to further improve the uniformity of the substrate surface temperature and facilitate the uniformity of film growth.

[0079] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to the embodiments. However, it should be understood that such modifications and changes all belong to the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments, and can be implemented or realized in various ways.

Claims

1. A vapor phase growth apparatus characterized by comprising: The application relates to a process chamber (100) comprising: a base (110) arranged in the process chamber (100) for carrying a substrate; a showerhead (210) arranged in the process chamber (100) opposite the base (110) for providing a process gas to the substrate; a rotary gas supply device (200) arranged in a top portion of the process chamber (100) and extending towards the showerhead (210) for providing the process gas to the showerhead (210); a rotary heat conduction assembly (300) arranged in a bottom portion of the process chamber (100) and extending towards the base (110) below the base (110); a heating device (120) arranged below the base (110), and the rotary heat conduction assembly (300) comprises a heat conduction device (130) arranged between the base (110) and the heating device (120). The rotary gas supply device (200) comprises a top rotary sealing device (220) and a gas supply pipeline (230); 2. The vapor phase growth apparatus according to claim 1, wherein the top rotary sealing device (220) is arranged around the gas supply pipeline (230) and is arranged in a top portion of the process chamber (100) to drive the showerhead (210) to move around an axis of the gas supply pipeline (230); the gas supply pipeline (230) penetrates the top portion of the process chamber (100) and is connected to and communicates with the showerhead (210). The top rotary sealing device (220) comprises a magnetic fluid sealing assembly.

3. The vapor phase growth apparatus according to claim 2, wherein The rotary heat conduction assembly (300) further comprises a bottom rotary sealing device (310) arranged in the bottom portion of the process chamber (100) and extending below the base (110), and the heat conduction device (130) is connected to a top portion of the bottom rotary sealing device (310) to rotate under the driving of the bottom rotary sealing device (310).

4. The vapor phase growth apparatus according to claim 1, wherein The bottom rotary sealing device (310) comprises:

5. The vapor phase growth apparatus according to claim 4, wherein a driving shaft (320) rotatably arranged at one end in a bottom wall of the process chamber (100), and the heat conduction device (130) is arranged at the other end of the driving shaft (320); a rotary sealing assembly (330) arranged in the bottom wall of the process chamber (100) and extending towards the base (110) and connected to the driving shaft (320) to drive the driving shaft (320) to rotate so as to rotate the heat conduction device (130); a bottom driving device (340) arranged outside the process chamber (100) and connected to the rotary sealing assembly (330) to provide a driving force. The rotary sealing assembly (330) comprises a magnetic fluid sealing assembly.

6. The vapor phase growth apparatus according to claim 5, wherein The heat conduction device (130) extends radially along the base (110), and the heating device (120) is accommodated in a space between the heat conduction device (130) and the bottom wall of the process chamber (100).

7. The vapor phase growth apparatus according to claim 1, wherein The heat conduction device (130) comprises a graphite plate.

8. The vapor phase growth apparatus according to claim 1, wherein ​ 9. The vapor phase growth apparatus according to claim 1, wherein At least part of the surface of the heat conducting device (130) is coated with a heat conducting coating.

10. The vapor phase growth apparatus according to claim 1, wherein The base (110) comprises a substrate carrier (111) for carrying the substrate, and a side support device (112) surrounding the bottom of the substrate carrier (111) and extending towards the bottom wall of the process chamber (100), and the heating device (120) and the heat conducting device (130) are located in a containing space surrounded by the base (110), the side support device (112) and the bottom wall of the process chamber (100).

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