Spraying device and deposition equipment

Abstract

The utility model provides a spraying device and deposition equipment, comprising: a spraying cavity, which is hollow and is provided with a plurality of spraying holes at the bottom at intervals; the partition plate is arranged in the spraying cavity and divides the space in the spraying cavity into an upper-layer space and a lower-layer space, a plurality of flow guide pieces are arranged on the bottom face of the partition plate at intervals, the flow guide pieces penetrate through the lower-layer space and stretch into the corresponding spraying holes, slits are formed between the flow guide pieces and the hole walls of the spraying holes, and the slits are communicated with the lower-layer space; the channel penetrates through the partition plate and the flow guide part and is communicated with the upper-layer space. Process gas in the lower-layer space can enter the reaction chamber through the slits between the flow guide pieces and the hole walls of the spraying holes, and process gas in the upper-layer space can enter the spraying holes through the channels and then enter the reaction chamber. The single spraying hole can serve as a circulation channel of process gas in the upper-layer space and the lower-layer space at the same time, and the deposition rate and uniformity are prevented from being affected by optimizing the circulation path of the process gas.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a spraying device and a deposition device. Background Technology

[0002] In deposition processes, such as atomic layer deposition (ALD), because precursor gases and reactive gases need to be introduced separately, the spray plate typically has a separate precursor gas chamber and a separate precursor gas channel for the precursor gas, and a separate reactive gas chamber and a separate reactive gas channel for the reactive gas. The inlets of both the precursor gas channel and the reactive gas channel are located on the bottom surface of the spray plate. When the precursor gas is introduced, it passes through the precursor gas chamber and the precursor gas channel, and then enters the reactive chamber through the inlet of the precursor gas channel. When the reactive gas is introduced, it passes through the reactive gas chamber and the reactive gas channel, and then enters the reactive chamber through the inlet of the reactive gas channel.

[0003] Because the precursor gas channel and the reactant gas channel are designed separately, with the inlets of the precursor gas channel and the reactant gas channel each occupying a portion of the bottom surface of the spray plate, the number and distribution of the inlets are limited, and the gas flow rate and velocity are also restricted, which in turn affects the deposition rate and may even cause uneven gas distribution, thus affecting the uniformity of deposition.

[0004] In view of this, it is necessary to propose a spraying device and a sedimentation equipment to solve the above problems. Utility Model Content

[0005] The purpose of this invention is to provide a spraying device and a deposition equipment to improve the problem that the existing separate design of the precursor gas channel and the reaction gas channel affects the deposition rate and deposition uniformity.

[0006] This utility model provides a spraying device, including:

[0007] The spray chamber is hollow inside and has several spray holes spaced apart at the bottom;

[0008] A partition plate is disposed in the spray chamber and divides the space inside the spray chamber into an upper space and a lower space. A plurality of flow guides are provided at intervals on the bottom surface of the partition plate. Each flow guide is corresponding to a spray hole. The flow guide passes through the lower space and extends into the corresponding spray hole. A slit is formed between the flow guide and the wall of the spray hole. The slit communicates with the lower space.

[0009] Each channel is configured in a corresponding manner to the flow guide, the channel passes through the partition plate and the corresponding flow guide, and the channel is connected to the upper space.

[0010] The beneficial effects of the spray device provided by this utility model are as follows: the space inside the spray chamber is divided into an upper space and a lower space by a partition plate, and the guide members on the partition plate extend into the corresponding spray holes. On the one hand, the process gas in the lower space can enter the reaction chamber through the slit between the guide member and the wall of the spray hole; on the other hand, the process gas in the upper space can enter the reaction chamber through the channel on the guide member located in the spray hole. With this design, a single spray hole can simultaneously serve as a flow channel for process gas in both the upper and lower spaces, and by optimizing the flow path of the process gas, it avoids affecting the deposition rate and deposition uniformity.

[0011] In one possible embodiment, the upper space is provided with P first guide plates, and the first guide plates are provided with a plurality of first guide holes at intervals. When P is greater than 1, the P first guide plates are distributed at intervals in the vertical direction, where P is a positive integer.

[0012] In one possible embodiment, the lower space is provided with Q second guide plates, and the second guide plates are provided with a plurality of second guide holes at intervals. The second guide holes are provided in a one-to-one correspondence with the guide members. The guide members pass through the corresponding second guide holes and a gap is formed between the guide members and the hole walls of the second guide holes. When Q is greater than 1, the second guide plates are distributed at intervals in the vertical direction, and Q is a positive integer.

[0013] Its beneficial effects are as follows: the first guide hole on the first guide plate can promote the uniform diffusion of the process gas in the upper space; the second guide hole on the second guide plate can promote the uniform diffusion of the process gas in the lower space.

[0014] In one possible embodiment, the flow guide has a first distance between it and the bottom surface of the spray cavity.

[0015] Its beneficial effects are as follows: the design of having a first gap between the guide component and the bottom surface of the spray cavity allows the spray device to be applied not only to processing processes in which process gases are introduced separately, but also to processing processes in which two process gases are introduced in combination, so that the spray device can adapt to different process requirements and improve adaptability and flexibility.

[0016] In one possible embodiment, the spray hole includes a first segment communicating with the lower space and a second segment communicating with the first segment, wherein the diameter of the second segment is smaller than the diameter of the first segment.

[0017] The flow guide is located within the first orifice section.

[0018] Its beneficial effect is that, for processing processes in which two process gases are mixed and introduced, since the aperture of the second orifice is smaller than that of the first orifice, the aperture of the spray hole becomes smaller, which helps the process gas flowing out from the slit and the process gas flowing out from the channel to be fully mixed at the second orifice before entering the reaction chamber.

[0019] In one possible embodiment, the spray hole further includes a third hole segment communicating between the first hole segment and the second hole segment, the diameter of the third hole segment gradually decreasing from the first hole segment to the second hole segment.

[0020] Its beneficial effect is that by setting a third orifice between the first orifice and the second orifice, the gradual change in the orifice diameter of the third orifice can avoid the sudden change in the flow rate of the process gas due to the sudden change in orifice diameter, thereby avoiding turbulence and eddy currents.

[0021] In one possible embodiment, the flow guide includes a main body section disposed on the bottom surface of the partition plate and a variable diameter section disposed at the bottom end of the main body section, wherein the cross-sectional dimension of the variable diameter section gradually decreases from one end near the main body section to one end away from the main body section;

[0022] The main body segment is located within the first hole segment, and the first slit portion of the slit is formed between the main body segment and the hole wall of the first hole segment;

[0023] The variable diameter section is located within the third hole section, and the second slit portion of the slit is formed between the variable diameter section and the hole wall of the third hole section.

[0024] Its beneficial effect is that the cross-sectional size of the variable diameter section gradually decreases to match the gradually decreasing aperture of the third aperture section, so as to achieve a gradual transition from the first aperture section with a larger aperture to the second aperture section with a smaller aperture, so that the flow velocity of the process gas can change smoothly when passing through the third aperture section, ensuring the stability of the process gas flow.

[0025] In one possible embodiment, the flow guide has a second spacing between it and the second orifice segment.

[0026] Its beneficial effect is that, for a processing process in which two process gases are mixed and introduced, the second gap provides a space for the process gas flowing out from the slit and the process gas flowing out from the channel to mix initially. After the initial mixing at the second gap, the gas is further mixed thoroughly through the second orifice before entering the reaction chamber, ensuring that the different process gases can be mixed fully and uniformly.

[0027] In one possible embodiment, the channel includes a first connecting segment and a second connecting segment connected to each other, the first connecting segment being connected to the upper space and the second connecting segment being connected to the spray hole;

[0028] The aperture of the first connecting segment is larger than the aperture of the second connecting segment.

[0029] Its beneficial effects are as follows: For processing processes in which two process gases are mixed and introduced, the channel is designed with a first connecting section with a larger aperture and a second connecting section with a smaller aperture to match the variable diameter design of the spray hole. By reducing the aperture, the flow rate of the process gas in the channel and the process gas at the slit entering the second connecting section is controlled, ensuring that the process gas flowing out of the slit and the process gas flowing out of the channel can be fully and uniformly mixed.

[0030] In one possible embodiment, the top of the spray chamber is provided with an air inlet, which communicates with the upper space;

[0031] The spraying device also includes an outer tube connected to the air inlet and an inner tube disposed inside the outer tube. The inner tube extends into the upper space and is connected to the partition plate. The partition plate is provided with perforations, which communicate with the inner tube and the lower space respectively.

[0032] Its beneficial effect is that by setting an air inlet on the spray chamber and through the outer and inner pipes of the double-layer pipe structure, separate ventilation of the upper and lower spaces can be achieved.

[0033] In one possible embodiment, the spraying device further includes:

[0034] A first exhaust assembly, connected to the upper space and used for exhausting air from the upper space; and / or,

[0035] The second exhaust assembly is connected to the lower space and is used to exhaust air from the lower space.

[0036] Its beneficial effects are as follows: after the process gas is introduced, purging gas needs to be introduced to purge the pipeline, the spray device and the reaction chamber. During the purging process, the first exhaust assembly and the second exhaust assembly respectively exhaust the upper space and the lower space to assist in the exhaust, saving purging time and improving purging efficiency and purging effect.

[0037] This utility model also provides a deposition device, including: a spraying device as described in any of the above embodiments. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of another embodiment of the spraying device of this utility model.

[0039] Figure 2 This is a partial enlarged view of one embodiment of the spraying device of this utility model.

[0040] Figure 3 This is a schematic diagram of the first guide plate in the spray device of this utility model.

[0041] Figure 4 This is a schematic diagram of the second guide plate in the spray device of this utility model.

[0042] Explanation of reference numerals in the attached drawings: 110, Spray chamber; 111, Upper space; 1111, First sub-chamber; 112, Lower space; 1121, Second sub-chamber; 113, Spray hole; 1131, First hole section; 1132, Second hole section; 1133, Third hole section; 114, Slit; 1141, First slit section; 1142, Second slit section; 115, Air inlet; 120, Partition plate; 121, Perforation; 130, Flow guide; 131, Main body section; 132, Variable diameter section; 1 40. Channel; 141. First connecting section; 142. Second connecting section; 150. First guide plate; 151. First guide hole; 160. Second guide plate; 161. Second guide hole; 1611. Gap; 171. Outer tube; 172. Inner tube; 180. First exhaust assembly; 181. First exhaust chamber; 182. First exhaust pipe; 183. First exhaust component; 190. Second exhaust assembly; 191. Second exhaust chamber; 192. Second exhaust pipe; 193. Second exhaust component. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0044] To address the problems existing in the prior art, embodiments of this utility model provide a spraying device and a deposition equipment, see [link to relevant documentation]. Figure 1 and Figure 2 The spraying device includes a spraying chamber 110, a partition plate 120, and a channel 140. The spraying chamber 110 is hollow inside and has a number of spraying holes 113 spaced apart at the bottom. The partition plate 120 is located inside the spraying chamber 110 and divides the space inside the spraying chamber 110 into an upper space 111 and a lower space 112. The bottom surface of the partition plate 120 is provided with a plurality of flow guides 130 at intervals. The flow guides 130 are integrally formed or fixedly connected to the partition plate 120. The flow guides 130 are arranged one-to-one with the spray holes 113. The flow guides 130 pass through the lower space 112 and extend into the corresponding spray holes 113. A slit 114 is formed between the flow guides 130 and the hole wall of the spray holes 113. The slit 114 communicates with the lower space 112. The channel 140 is arranged one-to-one with the flow guides 130. The channel 140 passes through the partition plate 120 and the flow guides 130. The channel 140 communicates with the upper space 111.

[0045] The space within the spray chamber 110 is divided into an upper space 111 and a lower space 112 by a partition plate 120. A flow guide 130 is provided on the partition plate 120, extending into the corresponding spray hole 113. On one hand, a slit 114 is formed between the flow guide 130 and the hole wall of the spray hole 113, allowing the process gas in the lower space 112 to enter the reaction chamber through the slit 114 at the spray hole 113. On the other hand, a channel 140 is provided in the flow guide 130, allowing the process gas in the upper space 111 to enter the reaction chamber through the channel 140 on the flow guide 130 located in the spray hole 113. This achieves the goal of allowing process gas to flow through both the upper space 111 and the lower space 112 at a single spray hole 113. By optimizing the flow path of the process gas, the flow path of the process gas can be arranged more densely and uniformly, avoiding any impact on the deposition rate and deposition uniformity.

[0046] In one embodiment, see Figure 1 , Figure 2 as well as Figure 3The upper space 111 is provided with P first guide plates 150, and each first guide plate 150 has a number of first guide holes 151 spaced apart. When P is greater than 1, the P first guide plates 150 are distributed vertically at intervals, dividing the upper space 111 into several first sub-chambers 1111. The first guide holes 151 connect adjacent first sub-chambers 1111. P is a positive integer. It should be noted that the number, arrangement, and aperture size of the first guide holes 151 are not limited here and can be flexibly set according to actual process requirements. For example, the number of first guide holes 151 can be evenly distributed on the first guide plates 150 to ensure that the process gas in the upper space 111 can diffuse evenly.

[0047] The design of the first guide hole 151 allows the process gas to be diverted to different areas within the upper space 111 as it flows through the several first guide holes 151. This diversion design avoids the phenomenon of localized accumulation of process gas. The process gas in the upper space 111 can be evenly diffused within the spray device before entering the reaction chamber, thus improving the uniformity of gas distribution.

[0048] In another embodiment, see Figure 1 , Figure 2 as well as Figure 4 The lower space 112 is provided with Q second guide plates 160. The second guide plates 160 are provided with a number of second guide holes 161 at intervals. The second guide holes 161 are provided in a one-to-one correspondence with the guide members 130. The guide members 130 pass through the corresponding second guide holes 161 and a gap 1611 is formed between the guide members 130 and the hole wall of the second guide holes 161. When Q is greater than 1, the second guide plates 160 are distributed at intervals in the vertical direction. The lower space 112 is divided into a number of second sub-chambers 1121 by the Q second guide plates 160. The gaps 1611 make adjacent two second sub-chambers 1121 connected. Q is a positive integer. It should be noted that the number, arrangement and diameter of the second guide holes 161 are not limited here, and can be flexibly set according to actual process requirements. For example, several second guide holes 161 are evenly distributed on the second guide plate 160 to ensure that the process gas in the lower space 112 can diffuse evenly.

[0049] The second guide hole 161 is used for passing through the guide member 130 on one hand, and for the flow of process gas on the other hand. When the process gas flows in the lower space 112, it is diverted to different areas in the lower space 112 through several second guide holes 161. This diversion design avoids the phenomenon of local process gas accumulation. The process gas in the lower space 112 can be evenly diffused in the spray device before entering the reaction chamber, thereby improving the uniformity of gas distribution.

[0050] In one specific embodiment, see Figure 1 and Figure 2 The first guide plate 150 is one unit, and the second guide plate 160 is one unit. The spray device forms a double-layer four-chamber structure, providing a larger diffusion space for the process gas.

[0051] In one embodiment, see Figure 2 The guide member 130 and the bottom surface of the spray chamber 110 have a first distance H. In this embodiment, because the guide member 130 and the bottom surface of the spray chamber 110 have a first distance H, that is, the bottom end of the guide member 130 is a certain distance away from the opening of the spray hole 113 on the bottom surface of the spray chamber 110, this structural design allows the spray device to be applied not only to processing processes in which process gases are introduced separately, but also to processes in which process gases are introduced separately. For example, process gas is first introduced into the lower space 112, and the process gas in the lower space 112 enters the reaction chamber through the slit 114 and the spray hole 113 located below the guide member 130. After purging and exhausting, another process gas is introduced into the upper space 111, and the process gas in the upper space 111... The gas enters the reaction chamber through channel 140 and the spray hole 113 located below the guide member 130. This spray device can also be applied to processing processes where two process gases are mixed. For example, different process gases can be simultaneously introduced into the lower space 112 and the upper space 111. The process gas in the lower space 112 enters the spray hole 113 located below the guide member 130 through slit 114, while the process gas in the upper space 111 enters the spray hole 113 located below the guide member 130 through channel 140. The two process gases mix in the spray hole 113 located below the guide member 130 before entering the reaction chamber. The above application scenarios are for illustrative purposes only and do not constitute a limitation on the actual process flow of this spray device.

[0052] Of course, in another embodiment, see Figure 1 The spray device can also be designed such that the bottom surface of the guide member 130 and the bottom surface of the spray chamber 110 are on the same horizontal plane. With this design, the spray device can be applied to processing processes where process gases are introduced separately, but it cannot achieve mixing of different process gases within the spray device. For example, process gas can be introduced into the lower space 112 first, and then enter the reaction chamber through the slit 114. After purging and exhausting, another process gas can be introduced into the upper space 111, and then enter the reaction chamber through the channel 140. The above-described process application scenarios are for illustrative purposes only and do not constitute a limitation on the actual process flow of this spray device.

[0053] In one embodiment, see Figure 2The spray orifice 113 includes a first orifice section 1131 communicating with the lower space 112 and a second orifice section 1132 communicating with the first orifice section 1131. The diameter of the second orifice section 1132 is smaller than the diameter of the first orifice section 1131. The guide element 130 is located within the first orifice section 1131. In this embodiment, for a processing process in which two process gases are mixed and introduced, the process gas in the lower space 112 enters the second orifice section 1132 through the first orifice section 1131, and the process gas in the upper space 111 enters the second orifice section 1132 through the channel 140. The two process gases are mixed in the second orifice section 1132 before entering the reaction chamber. By designing the diameter of the second orifice section 1132 to be smaller than that of the first orifice section 1131, the flow rate of the process gas will be limited according to the basic principles of fluid mechanics when the diameter is reduced, allowing the two process gases to be mixed more fully and uniformly in the second orifice section 1132.

[0054] In one embodiment, see Figure 2 The spray orifice 113 further includes a third orifice 1133 connecting the first orifice segment 1131 and the second orifice segment 1132. The diameter of the third orifice 1133 gradually decreases from the first orifice segment 1131 to the second orifice segment 1132. In this embodiment, the diameters of the first orifice segment 1131 and the second orifice segment 1132 remain unchanged, while the diameter of the second orifice segment 1132 is smaller than that of the first orifice segment 1131. The third orifice 1133 with a changing diameter is provided between the first orifice segment 1131 and the second orifice segment 1132, allowing the process gas to gradually adapt to the change in diameter. This avoids sudden changes in the flow rate of the process gas, making the flow of the process gas more stable and preventing turbulence and eddies.

[0055] In one embodiment, see Figure 2The flow guide 130 includes a main body section 131 disposed on the bottom surface of the partition plate 120 and a variable diameter section 132 disposed at the bottom end of the main body section 131. The cross-sectional dimensions of the variable diameter section 132 gradually decrease from one end near the main body section 131 to the end away from the main body section 131. The main body section 131 is located within the first hole section 1131, and a first slit portion 1141 of a slit 114 is formed between the main body section 131 and the hole wall of the first hole section 1131. The variable diameter section 132 is located within the third hole section 1133, and a second slit portion 1142 of the slit 114 is formed between the variable diameter section 132 and the hole wall of the third hole section 1133. In this embodiment, the variable diameter section 132 of the flow guide 130 is designed to match the gradually decreasing diameter of the third hole section 1133. During the flow of process gas from the first orifice section 1131 to the second orifice section 1132, the process gas first passes through the relatively wide first slit portion 1141 between the main body section 131 and the orifice wall of the first orifice section 1131. Then, it enters the gradually narrowing second slit portion 1142 between the variable diameter section 132 and the orifice wall of the third orifice section 1133, and then enters the second orifice section 1132. Because the cross-sectional size of the variable diameter section 132 gradually decreases, the flow velocity of the process gas can change smoothly when passing through the third orifice section 1133, ensuring the stability of the process gas flow and avoiding turbulence and eddies.

[0056] In one specific embodiment, see Figure 2 The first hole section 1131 and the second hole section 1132 are round holes, the main body section 131 is columnar, and the third hole section 1133 and the variable diameter section 132 are inverted frustum shapes.

[0057] In one embodiment, see Figure 2 A second distance L exists between the flow guide 130 and the second orifice 1132. This can be understood as the second distance L being between the bottom end of the flow guide 130 and the inlet at the top of the second orifice 1132. Process gas flows out of the channel 140 and enters the space at this second distance L. Process gas flowing out of the slit 114 also enters the space at this second distance L. This space at the second distance L serves as a preliminary mixing point for the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140. As can be seen from the aforementioned embodiments, this space at the second distance L can be the bottom of the first orifice 1131 or the bottom of the third orifice 1133. Since the apertures of both the first and third orifices 1131 and 1133 are larger than the aperture of the second orifice 1132, the larger space at the second distance L increases the chances of collisions between process gas molecules, promoting preliminary uniform mixing between different process gases. Then, the pre-mixed process gases enter the second section 1132 with smaller apertures for further mixing, ensuring that the process gases can be mixed more fully and uniformly.

[0058] In one embodiment, see Figure 2The channel 140 includes a first connecting segment 141 and a second connecting segment 142 that are connected to each other. The first connecting segment 141 is connected to the upper space 111, and the second connecting segment 142 is connected to the spray hole 113. The diameter of the first connecting segment 141 is larger than the diameter of the second connecting segment 142. In this embodiment, for the processing process in which two process gases are mixed and introduced, due to the gradual reduction in the diameter of the third orifice 1133 and the small diameter design of the second orifice 1132, the flow rate of the process gas flowing out of the slit 114 will be limited when the orifice diameter decreases. In order to ensure that the two process gases are mixed in a certain set ratio, the channel 140 is designed with a first connecting section 141 with a larger orifice diameter and a second connecting section 142 with a smaller orifice diameter, in order to match the variable diameter design of the spray hole 113, ensuring that the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140 reach a preset ratio in terms of flow rate, thereby realizing the mixing of the two process gases in a set ratio, and also ensuring that the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140 can be fully and uniformly mixed.

[0059] In one specific embodiment, see Figure 2 The top end of the first connecting segment 141 is located on the top surface of the partition plate 120, and the bottom end of the first connecting segment 141 is located at or near the connection between the main body segment 131 and the variable diameter segment 132. The top end of the second connecting segment 142 is connected to the bottom end of the first connecting segment 141, and the bottom end of the second connecting segment 142 is located on the bottom surface of the variable diameter segment 132.

[0060] In one embodiment, see Figure 1The top of the spray chamber 110 is provided with an air inlet 115, which is connected to the upper space 111. The spray device also includes an outer tube 171 connected to the air inlet 115 and an inner tube 172 disposed in the outer tube 171. The outer tube 171 and the inner tube 172 are concentrically arranged. The inner tube 172 extends into the upper space 111 and is connected to the partition plate 120. The partition plate 120 is provided with a through hole 121, which is connected to the inner tube 172 and the lower space 112 respectively. In this embodiment, the outer tube 171 and the inner tube 172 form a double-layer tube structure. Only one air inlet 115 needs to be provided on the spray chamber 110. The outer tube 171 and the inner tube 172 are located at the air inlet 115. Since the air inlet 115 is connected to the upper space 111 and the outer tube 171 is connected to the air inlet 115, a process gas can be introduced into the air inlet 115 through the outer tube 171, allowing air to be supplied to the upper space 111 independently. Since the inner tube 172 extends into the upper space 111 and is connected to the lower space 112 through the perforation 121, another process gas can be introduced into the inner tube 172, and the other process gas enters the lower space 112 through the perforation 121, allowing air to be supplied to the lower space 112 independently. Therefore, separate ventilation to the upper space 111 and the lower space 112 can be achieved through a single air inlet 115 and an inner and outer double-layer tube structure, simplifying the structure of the ventilation system.

[0061] In one embodiment, see Figure 1 The spraying device further includes: a first exhaust assembly 180, which communicates with the upper space 111 and is used to exhaust the upper space 111; and / or, a second exhaust assembly 190, which communicates with the lower space 112 and is used to exhaust the lower space 112. In this embodiment, the first exhaust assembly 180 and the second exhaust assembly 190 are provided on the spraying chamber 110. The first exhaust assembly 180 and the second exhaust assembly 190 exhaust the upper space 111 and the lower space 112 separately, respectively. This layered exhaust design can significantly improve the purging efficiency, allowing the remaining gas to be discharged more quickly, thereby shortening the purging time; on the other hand, it avoids the residue of remaining gas in the spraying chamber 110, thus improving the purging effect.

[0062] In one specific embodiment, see Figure 1 In the case where the spray device also includes a first exhaust assembly 180, the first exhaust assembly 180 includes: a first exhaust chamber 181 disposed in the spray cavity 110 and communicating with the upper space 111, a first exhaust pipe 182 connected to the first exhaust chamber 181, and a first exhaust component 183 communicating with the first exhaust pipe 182 and used for air extraction.

[0063] In another specific embodiment, see Figure 1In the case where the spray device also includes a second exhaust assembly 190, the second exhaust assembly 190 includes: a second exhaust chamber 191 disposed in the spray chamber 110 and communicating with the lower space 112, a second exhaust pipe 192 connected to the second exhaust chamber 191, and a second exhaust component 193 communicating with the second exhaust pipe 192 and used for air extraction.

[0064] This invention also provides a deposition apparatus, such as an atomic layer deposition (ALD) apparatus, a chemical vapor deposition (CVD) apparatus, or a plasma enhanced chemical vapor deposition (PECVD) apparatus, etc., which includes a spray device as described in any of the above embodiments.

[0065] The following detailed explanation of the process flow of the spray device of this utility model applied to deposition equipment, with reference to specific embodiments, is provided below.

[0066] Taking the spraying device of this utility model applied to an ALD device as an example, a precursor gas is introduced into the inner tube 172, and a purge gas (e.g., an inert gas) is introduced into the outer tube 171 to balance the gas pressure. The precursor gas enters the lower space 112 through the perforation 121 on the partition plate 120, and is uniformly diffused through the second guide hole 161 on the second guide plate 160. The precursor gas then enters the reaction chamber through the slit 114 and the second hole section 1132 to react, and the precursor gas molecules are adsorbed on the substrate surface. The purge gas of the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole section 1132. After the precursor gas is introduced, purge gas is introduced into the inner tube 172 to purge the remaining precursor gas, while purge gas continues to be introduced into the outer tube 171. The purge gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second orifice 1132, while the purge gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second orifice 1132. At the same time, the first exhaust assembly 180 and the second exhaust assembly 190 are activated to accelerate exhaust. After purging, reactive gas is introduced into the outer tube 171, while purge gas continues to be introduced into the inner tube 172. The reactive gas enters the upper space 111 and diffuses evenly through the first guide hole 151 on the first guide plate 150. The reactive gas then enters the reaction chamber through the channel 140 and the second orifice 1132. The reactive gas molecules react chemically with the precursor molecules on the substrate surface to form a monolayer atomic film. The purge gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second orifice 1132. After the reactant gas is introduced, purge gas is introduced into the outer tube 171 to purge the remaining reactant gas. Simultaneously, purge gas continues to be introduced into the inner tube 172. The purge gas in the inner tube 172 passes through the lower space 112, slit 114, and the second orifice 1132 before entering the reaction chamber. The purge gas in the outer tube 171 passes through the upper space 111, channel 140, and the second orifice 1132 before entering the reaction chamber. At the same time, the first exhaust assembly 180 and the second exhaust assembly 190 are activated to accelerate exhaust. The precursor gas and reactant gas are circulated repeatedly according to the aforementioned steps until the desired thin film is obtained. After the reaction is completed, clean gas excited by the remote plasma source is introduced into the inner tube 172 and the outer tube 171. The clean gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second orifice 1132. The clean gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second orifice 1132. At the same time, the first exhaust assembly 180 and the second exhaust assembly 190 are turned on to accelerate exhaust, and the air extraction device of the reaction chamber is turned on to extract air to clean the spray device and the reaction chamber.

[0067] Taking the application of the spray device of this utility model in CVD equipment as an example, a precursor gas is introduced into the inner layer tube 172 and a reaction gas is introduced into the outer layer tube 171 at the same time. The precursor gas enters the lower space 112 through the perforation 121 on the partition plate 120. The precursor gas is uniformly diffused through the second guide hole 161 on the second guide plate 160. The precursor gas enters the second hole section 1132 through the slit 114. The reaction gas enters the upper space 111. The reaction gas is uniformly diffused through the first guide hole 151 on the first guide plate 150. The reaction gas enters the second hole section 1132 through the channel 140. The precursor gas and the reaction gas are mixed in the second hole section 1132 and then enter the reaction chamber to react and deposit on the substrate. After the reaction is completed, clean gas excited by the remote plasma source is introduced into the inner tube 172 and the outer tube 171. The clean gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second orifice 1132. The clean gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second orifice 1132. At the same time, the first exhaust assembly 180 and the second exhaust assembly 190 are turned on to accelerate exhaust, and the air extraction device of the reaction chamber is turned on to extract air to clean the spray device and the reaction chamber.

[0068] It should be noted that the above descriptions of process application scenarios are for illustrative purposes only and do not constitute a limitation on the actual process flow of this spraying device.

[0069] In the description of this utility model, it should be understood that the terms "comprising" and "having" as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0070] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0071] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0072] While the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model as set forth in the claims. Furthermore, the utility model described herein may have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by one of ordinary skill in the art to which this utility model pertains.

Claims

1. A spray device, characterized in that The spray device comprises: a spray cavity, which is hollow and provided with a plurality of spray holes at the bottom; a partition plate, which is arranged in the spray cavity and divides the space in the spray cavity into an upper space and a lower space, the bottom surface of the partition plate is provided with a plurality of flow guide members at intervals, the flow guide members are arranged one-to-one with the spray holes, the flow guide members pass through the lower space and extend into the corresponding spray holes, a gap is formed between the flow guide members and the hole wall of the spray hole, and the gap is in communication with the lower space; a channel, which is arranged one-to-one with the flow guide members, passes through the partition plate and the corresponding flow guide member, and is in communication with the upper space.

2. The spray device of claim 1, wherein P first flow guide plates are arranged in the upper space, a plurality of first flow guide holes are arranged on the first flow guide plates at intervals, when P is greater than 1, the P first flow guide plates are arranged at intervals in the vertical direction, and P is a positive integer.

3. The spray device of claim 1, wherein Q second flow guide plates are arranged in the lower space, a plurality of second flow guide holes are arranged on the second flow guide plates at intervals, the second flow guide holes are arranged one-to-one with the flow guide members, the flow guide members pass through the corresponding second flow guide holes, and a gap is formed between the flow guide members and the hole wall of the second flow guide hole, when Q is greater than 1, the second flow guide plates are arranged at intervals in the vertical direction, and Q is a positive integer.

4. The spray device of claim 1, wherein The flow guide member has a first distance from the bottom surface of the spray cavity.

5. The shower assembly of claim 4, wherein, The spray hole comprises a first hole section in communication with the lower space and a second hole section in communication with the first hole section, the hole diameter of the second hole section is smaller than the hole diameter of the first hole section; The flow guide member is located in the first hole section.

6. The spray device of claim 5, wherein The spray hole further comprises a third hole section in communication between the first hole section and the second hole section, the hole diameter of the third hole section gradually decreases from the first hole section to the second hole section.

7. The shower assembly of claim 6, wherein, The flow guide member comprises a main section arranged on the bottom surface of the partition plate and a variable-diameter section arranged at the bottom end of the main section, the cross-sectional dimension of the variable-diameter section gradually decreases from one end close to the main section to one end away from the main section; The main section is located in the first hole section, and the main section and the hole wall of the first hole section form a first gap part of the gap; The variable-diameter section is located in the third hole section, and the variable-diameter section and the hole wall of the third hole section form a second gap part of the gap.

8. The spray device of claim 5, wherein, The flow guide member has a second distance from the second hole section.

9. The shower assembly of claim 4, wherein, The channel comprises a first communication section and a second communication section in communication, the first communication section is in communication with the upper space, and the second communication section is in communication with the spray hole; The hole diameter of the first communication section is greater than the hole diameter of the second communication section.

10. The shower assembly of any one of claims 1-9, wherein, The top of the spray cavity is provided with an air inlet hole in communication with the upper space; The spray device further comprises an outer tube connected with the air inlet hole and an inner tube arranged in the outer tube, the inner tube extends into the upper space and is connected with the partition plate, the partition plate is provided with a perforation, and the perforation is in communication with the inner tube and the lower space, respectively.

11. The shower assembly of any one of claims 1-9, wherein, Further comprising: a first exhaust assembly, which is in communication with the upper space and is used for exhausting the upper space. and / or, A second air exhaust assembly is in communication with the lower space and is used to exhaust air from the lower space.

12. A deposition apparatus, characterized by, Comprising: The spray device of any one of claims 1-11.

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