Large-area functional layer thin film deposition device

Abstract

The utility model belongs to the technical field of thin film deposition equipment, and relates to a large-area functional layer thin film deposition device which comprises a liquid storage tank, a carrier gas inlet pipeline, an atomization mixing system, a dispersion system, a heating system, a quartz reaction cavity and an exhaust system, the liquid storage tank is provided with a feeding port, the atomization mixing system is communicated with the quartz reaction cavity through the dispersion system, the exhaust system is communicated with the quartz reaction cavity, a substrate to be deposited is placed on a deposition platform in the quartz reaction cavity, and the heating system is arranged in the deposition platform. And an inlet and an outlet convenient for substrates to enter and exit are respectively formed in the side surfaces of the quartz reaction cavity. According to the utility model, by optimizing the distribution of reaction sources, the uniformity and batch repeatability of deposited films are obviously improved, and the deposition process is carried out under normal pressure, so that the attenuation of the photovoltaic module caused by long-term vacuum environment is avoided.

Description

Technical Field

[0001] This utility model belongs to the technical field of thin film deposition equipment, and specifically relates to a large-area functional layer thin film deposition device. Background Technology

[0002] To achieve surface passivation, bulk passivation, and high-performance functional layer films in perovskite and other photovoltaic modules, adjustments to material formulations are often required. Existing methods for preparing these functional layer films typically employ solution coating, plating, and chemical vapor deposition (CVD). However, these methods still have many drawbacks and limitations in preparing large-area films. For example, in CVD, even small changes in gas flow rate and pressure can significantly affect film uniformity and thickness. In plating, the solution storage and liquid delivery system are difficult to clean, the substrate is in an open environment, and surface temperature and other uniformities are difficult to control. Consequently, the uniformity, crystal morphology, and thickness of the prepared functional layer films are difficult to control, further impacting the performance of the photovoltaic modules. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a large-area functional layer thin film deposition device. By optimizing the distribution of reaction sources, the uniformity and batch repeatability of the deposited thin film are significantly improved. Moreover, the deposition process is carried out under normal pressure, avoiding the degradation caused by long-term vacuum environment of photovoltaic modules.

[0004] This invention is implemented as follows: a large-area functional thin film deposition apparatus is provided, comprising a liquid storage tank, a carrier gas inlet pipeline, an atomizing and mixing system, a dispersion system, a heating system, a quartz reaction chamber, and an exhaust system. The liquid storage tank and the carrier gas inlet pipeline are respectively connected to the atomizing and mixing system. A feed port is provided on the liquid storage tank. The dispersion system connects the atomizing and mixing system to the quartz reaction chamber. The exhaust system is connected to the quartz reaction chamber. The substrate to be deposited is placed on the deposition platform inside the quartz reaction chamber. The heating system is located inside the deposition platform. An inlet and an outlet are respectively provided on the side of the quartz reaction chamber to facilitate the entry and exit of the substrate.

[0005] Furthermore, the atomizing mixing system includes a mixing chamber, a gas distributor, an ultrasonic atomizer, a stirring magnet, and a temperature control device. The gas distributor, ultrasonic atomizer, and stirring magnet are respectively disposed in the mixing chamber. The ultrasonic atomizer and stirring magnet are respectively located at the bottom of the mixing chamber. The temperature control device is disposed on the outer periphery of the mixing chamber. The end of the carrier gas inlet pipe is connected to the air inlet of the mixing chamber, the front end of the carrier gas inlet pipe is connected to the gas source, and the gas distributor is connected to the air inlet.

[0006] Furthermore, the storage tank is connected to the mixing chamber via a delivery pipeline, and a peristaltic pump is installed on the delivery pipeline.

[0007] Furthermore, the distributed system includes a gas pipeline, a motor booster unit, a porous metal fiber filter unit, and a high-density ceramic filter unit, which are sequentially arranged on the gas pipeline.

[0008] Furthermore, the exhaust system includes an exhaust pipe and a purifier, with the purifier installed on the exhaust pipe.

[0009] Compared with existing technologies, the large-area functional layer thin film deposition apparatus of this invention includes a liquid storage tank, a carrier gas inlet pipeline, an atomizing and mixing system, a dispersion system, a heating system, a quartz reaction chamber, and an exhaust system. The liquid storage tank and the carrier gas inlet pipeline are respectively connected to the atomizing and mixing system. The dispersion system connects the atomizing and mixing system to the quartz reaction chamber. The exhaust system is connected to the quartz reaction chamber. The substrate to be deposited is placed on the deposition platform inside the quartz reaction chamber, and the heating system is located inside the deposition platform. This invention significantly improves the uniformity and batch repeatability of the deposited thin film by optimizing the distribution of the reaction source. Moreover, the deposition process is carried out under normal pressure, avoiding the degradation caused by long-term vacuum environment of photovoltaic modules. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of a preferred embodiment of the present invention.

[0011] In the diagram: 1. Storage tank; 11. Feed port; 12. Liquid delivery pipeline; 2. Carrier gas inlet pipeline; 3. Atomizing mixing system; 31. Mixing chamber; 32. Gas distributor; 33. Ultrasonic atomizer; 34. Stirring magnet; 35. Temperature control device; 36. Air inlet; 4. Dispersion system; 41. Gas delivery pipeline; 42. Motor booster unit; 43. Porous metal fiber filter unit; 44. High-density ceramic filter unit; 5. Peristaltic pump; 6. Quartz reaction chamber; 61. Inlet; 62. Outlet; 7. Exhaust system; 71. Exhaust pipeline; 72. Purifier; 8. Deposition platform; A. Substrate. Detailed Implementation

[0012] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0013] Please refer to Figure 1 As shown, a preferred embodiment of the large-area functional layer thin film deposition device of this utility model includes a liquid storage tank 1, a carrier gas inlet pipeline 2, an atomization mixing system 3, a dispersion system 4, a heating system (not shown in the figure), a quartz reaction chamber 6, and an exhaust system 7.

[0014] The storage tank 1 and the carrier gas inlet pipe 2 are respectively connected to the atomizing mixing system 3, and a feed port 11 is provided on the storage tank 1. The dispersion system 4 connects the atomizing mixing system 3 to the quartz reaction chamber 5, and the exhaust system 7 connects to the quartz reaction chamber 6. The substrate A to be deposited is placed on the deposition platform 8 inside the quartz reaction chamber 6, and the heating system is located inside the deposition platform 8. An inlet 61 and an outlet 62 are respectively provided on the side of the quartz reaction chamber 6 to facilitate the entry and exit of the substrate. In this embodiment, the quartz reaction chamber 6 is not connected to a vacuum system because the deposition process of this device can be carried out under normal pressure.

[0015] The atomizing mixing system 3 includes a mixing chamber 31, a gas distributor 32, an ultrasonic atomizer 33, a stirring magnet 34, and a temperature control device 35. The gas distributor 32, ultrasonic atomizer 33, and stirring magnet 34 are respectively disposed within the mixing chamber 31, with the ultrasonic atomizer 33 and stirring magnet 34 located at the bottom of the mixing chamber 31. The temperature control device 35 is disposed on the outer periphery of the mixing chamber 31. The end of the carrier gas inlet pipe 2 is connected to the air inlet 36 of the mixing chamber 31, and the front end of the carrier gas inlet pipe 2 is connected to a gas source. The gas distributor 32 is connected to the air inlet 36. The external gas source is an inert gas or other gas.

[0016] The storage tank 1 is connected to the mixing chamber 31 through the infusion pipeline 12, and a peristaltic pump 5 is installed on the infusion pipeline 12.

[0017] The sedimentation feed liquid is added to the storage tank 1 through the feed port 11. The sedimentation feed liquid in the storage tank 1 is then fed into the mixing chamber 31 through the peristaltic pump 5 on the delivery pipeline 12. The ultrasonic atomizer 33 atomizes the sedimentation feed liquid stored in the mixing chamber 31, and the stirring magnetic particle 34 stirs the sedimentation feed liquid to prevent it from settling and separating.

[0018] The carrier gas from an external gas source enters the mixing chamber 31 through the carrier gas inlet pipe 2 and the inlet 36. After being distributed by the gas distributor 32, it is fully mixed with the atomized deposition raw material liquid gas to obtain the carrier gas of the mixed raw material liquid. The temperature control device 35 controls the internal temperature of the mixing chamber 31 to maintain the carrier gas of the raw material liquid in a gaseous state and prevent it from condensing in the mixing chamber 31.

[0019] The dispersion system 4 includes a gas pipeline 41, a motor booster unit 42, a porous metal fiber filter unit 43, and a high-density ceramic filter unit 44, which are respectively arranged on the gas pipeline 41.

[0020] The carrier gas of the mixed raw material solution enters the quartz reaction chamber 6, and the deposition material is deposited onto the substrate surface. Before deposition, the heating system is turned on to preheat the quartz reaction chamber 6. The air intake can be precisely adjusted by changing the motor speed of the motor booster unit 42, and the concentration of the carrier gas of the mixed raw material solution can be precisely controlled by changing the porosity of the porous metal fiber filter unit 43 and the high-density ceramic filter unit 44. With the thin film deposition device of this invention, efficient, uniform, and repeatable preparation of large-area functional thin films can be achieved.

[0021] The exhaust system 7 includes an exhaust pipe 71 and a purifier 72, with the purifier 72 installed on the exhaust pipe 71. The purifier 72 purifies the exhaust gas discharged from the quartz reaction chamber 6.

[0022] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A large-area functional layer thin film deposition apparatus, characterized in that, The system includes a liquid storage tank, a carrier gas inlet pipeline, an atomizing and mixing system, a dispersion system, a heating system, a quartz reaction chamber, and an exhaust system. The liquid storage tank and the carrier gas inlet pipeline are connected to the atomizing and mixing system. A feed port is provided on the liquid storage tank. The dispersion system connects the atomizing and mixing system to the quartz reaction chamber. The exhaust system is also connected to the quartz reaction chamber. The substrate to be deposited is placed on the deposition platform inside the quartz reaction chamber. The heating system is located inside the deposition platform. An inlet and an outlet are provided on the side of the quartz reaction chamber to facilitate the entry and exit of the substrate.

2. The large-area functional layer thin film deposition apparatus as described in claim 1, characterized in that, The atomizing mixing system includes a mixing chamber, a gas distributor, an ultrasonic atomizer, a stirring magnet, and a temperature control device. The gas distributor, ultrasonic atomizer, and stirring magnet are respectively disposed in the mixing chamber. The ultrasonic atomizer and stirring magnet are respectively located at the bottom of the mixing chamber. The temperature control device is disposed on the outer periphery of the mixing chamber. The end of the carrier gas inlet pipe is connected to the air inlet of the mixing chamber, the front end of the carrier gas inlet pipe is connected to the gas source, and the gas distributor is connected to the air inlet.

3. The large-area functional layer thin film deposition apparatus as described in claim 2, characterized in that, The storage tank is connected to the mixing chamber via a delivery pipeline, and a peristaltic pump is installed on the delivery pipeline.

4. The large-area functional layer thin film deposition apparatus as described in claim 1, characterized in that, The distributed system includes a gas pipeline, a motor booster unit, a porous metal fiber filter unit, and a high-density ceramic filter unit, which are sequentially arranged on the gas pipeline.

5. The large-area functional layer thin film deposition apparatus as described in claim 1, characterized in that, The exhaust system includes an exhaust pipe and a purifier, with the purifier installed on the exhaust pipe.

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