Semiconductor photonic device

Abstract

The semiconductor photonic device includes a first dielectric layer, a plurality of second dielectric layers on the first dielectric layer, and a semiconductor photonic circuit in the first dielectric layer. The semiconductor photonic circuit includes one or more waveguide structures and an optical modulator structure coupled to the one or more waveguide structures. The semiconductor photonic device includes a modulation heater structure at least partially in the first dielectric layer, wherein the modulation heater structure includes one or more heater portions laterally adjacent an optical modulator structure in the first dielectric layer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a semiconductor photonic device. BACKGROUND

[0002] Semiconductor devices can be configured to use optical signals for high-speed and secure data transmission between integrated circuits and / or semiconductor dies of the semiconductor devices. The optical signals can be transmitted through waveguides in the semiconductor devices. The waveguides can confine the optical signals, reduce optical loss, and increase transmission efficiency of the optical signals. Data can be encoded into the optical signals by modulating light into optical pulses through optical modulators. The optical pulses are then transmitted to the waveguides for transmission to other regions of the semiconductor devices. SUMMARY

[0003] Some embodiments of the present disclosure provide a semiconductor photonic device including a first dielectric layer, a plurality of second dielectric layers on the first dielectric layer, a semiconductor photonic circuit in the first dielectric layer, and a modulation heater structure at least partially in the first dielectric layer. The semiconductor photonic circuit includes one or more waveguide structures and an optical modulator structure coupled to the one or more waveguide structures. The modulation heater structure includes one or more heater portions laterally adjacent to the optical modulator structure in the first dielectric layer.

[0004] Some embodiments of the present disclosure provide a semiconductor photonic device including a first dielectric layer, a plurality of second dielectric layers on the first dielectric layer, a semiconductor photonic circuit in the first dielectric layer, and a modulation heater structure in one or more of the second dielectric layers. The semiconductor photonic circuit includes one or more waveguide structures and an optical modulator structure coupled to the one or more waveguide structures. The modulation heater structure includes a heater portion, the optical modulator structure includes an optical modulator segment, the heater portion is respectively on the optical modulator segment of the optical modulator structure, and one of the heater portions includes a heater segment, the heater segment is arranged along a first direction and extends toward a second direction, the second direction is approximately perpendicular to the first direction.

[0005] Some embodiments of the present disclosure provide a semiconductor photonic device including a substrate, a dielectric layer above the substrate, an optical modulator structure above the dielectric layer, an additional dielectric layer surrounding the optical modulator structure above the dielectric layer, one or more sides of the optical modulator structure in the additional dielectric layer, a recess in the additional dielectric layer adjacent to the one or more sides of the optical modulator structure, and a modulation heater portion in the recess. BRIEF DESCRIPTION OF DRAWINGS

[0006] Aspects of the disclosure, can best be understood with reference to the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the features are not necessarily drawn to scale. In fact, the dimensions can be arbitrarily increased or decreased for the sake of discussion. Embodiments will be described with reference to a variety of specific details that can be implemented by one of ordinary skill in the art. Those of ordinary skill in the art will appreciate that the various aspects can be practiced without such specific details, which are given for purposes of explanation only. Embodiments shown in drawings are intended to be illustrative rather than restrictive.

[0007] Figure 1 is a schematic diagram of an example of a photonic integrated circuit as described herein;

[0008] Figure 2A and Figure 2B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0009] Figures 3A-3G is a schematic diagram of an example of forming a semiconductor photonic device as described herein;

[0010] Figure 4A and Figure 4B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0011] Figures 5A-5G is a schematic diagram of an example of forming a semiconductor photonic device as described herein;

[0012] Figure 6A and Figure 6B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0013] Figures 7A-7H is a schematic diagram of an example of forming a semiconductor photonic device as described herein;

[0014] Figure 8A and Figure 8B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0015] Figures 9A-9H is a schematic diagram of an example of forming a semiconductor photonic device as described herein;

[0016] Figure 10A and Figure 10B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0017] Figure 11A and Figure 11B is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0018] Figures 12A-12C is a schematic diagram of an example of a photonic integrated circuit and a semiconductor photonic device comprising the photonic integrated circuit;

[0019] Figures 13A-13H is a schematic diagram of an example of forming a semiconductor photonic device as described herein;

[0020] Figure 14A and Figure 14B are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits;

[0021] Figures 15A-15C are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits;

[0022] Figure 16A and Figure 16B are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits;

[0023] Figure 17A and Figure 17B are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits;

[0024] Figure 18 is a flowchart of an example process related to forming a semiconductor photonic device as described herein.

[0025] NOTATION

[0026] 100, 200, 214, 300, 400, 414, 500, 600, 614, 700, 800, 814, 900, 1000, 1014, 1100, 1114, 1200, 1214, 1236, 1300, 1400, 1414, 1500, 1514, 1536, 1600, 1614, 1700, 1714: examples

[0027] 102, 202, 402, 602, 802, 1002, 1102, 1202, 1402, 1502, 1602, 1702: photonic integrated circuits

[0028] 104, 108, 204, 208, 404, 408, 604, 608, 804, 808, 1004, 1008, 1104, 1108, 1204, 1208, 1404, 1408, 1504, 1508, 1604, 1608, 1704, 1708: waveguide structures

[0029] 106, 206, 406, 606, 806, 1006, 1106, 1206, 1406, 1506, 1606, 1706: optical modulator structures

[0030] 110a, 110b, 210a, 210b, 410a, 410b, 610a, 610b, 810a, 810b, 1010a, 1010b, 1110a, 1110b, 1210a, 1210b, 1410a, 1410b, 1510a, 1510b, 1610a, 1610b, 1710a, 1710b: optical modulator section

[0031] 212, 412, 612, 812, 1012, 1112, 1212, 1412, 1512, 1612, 1712: modulating heater structure

[0032] 212a, 212b, 212c, 412a, 412b, 412c, 612a, 612b, 612c, 812a, 812b, 812c, 1012a, 1012b, 1012c, 1112a, 1112b, 1112c, 1412a, 1412b, 1512a, 1512b, 1612a, 1612b, 1712a, 1712b: heater portion

[0033] 216, 416, 616, 816, 1016, 1116, 1216, 1416, 1516, 1616, 1716: semiconductor photonic device

[0034] 218, 220, 222, 224, 418, 420, 422, 424, 618, 620, 622, 624, 818, 820, 822, 824, 1018, 1020, 1022, 1024, 1118, 1120, 1122, 1124, 1218, 1220, 1222, 1224, 1418, 1420, 1422, 1424, 1518, 1520, 1522, 1524, 1618, 1620, 1622, 1624, 1718, 1720, 1722, 1724: dielectric layer

[0035] 226, 426, 626, 826, 1026, 1126, 1226, 1426, 1526, 1626, 1726: metallization layer

[0036] 302, 502, 702, 902, 1302: substrate

[0037] 304, 504, 704, 904, 1304: semiconductor substrate

[0038] 306, 506, 706, 906, 1306: semiconductor layer

[0039] 308, 310, 312, 508, 510, 512, 708, 710, 712, 908, 910, 912, 1308, 1310: recess

[0040] 612d, 812d, 1012d, 1012e, 1112d, 1112e: heater portion

[0041] 714, 914: heater layer

[0042] 1028, 1128, 1228, 1428, 1528: segment

[0043] 1030, 1130, 1230, 1430, 1530: connecting segment

[0044] 1212a, 1212b: heater portion

[0045] 1232, 1432, 1532: dielectric spacer

[0046] 1234, 1434, 1534: top surface

[0047] 1436: oxide pattern layer

[0048] 1728, 1730: heater segment

[0049] 1800: process

[0050] 1810, 1820, 1830, 1840: tile

[0051] x, y, z: direction

[0052] A-A, B-B, C-C, D-D, E-E, F-F, G-G, H-H, I-I, J-J, K-K: line DETAILED DESCRIPTION

[0053] The following disclosure provides many different embodiments, or examples, for implementing various characteristics of the provided subject matter. The specific examples of elements and arrangements described below are intended to be examples only. Of course, other elements and arrangements can be utilized, and not just those described below. For example, in the following description, forming a first feature on or over a second feature can include embodiments in which the first feature and the second feature are formed directly contacting each other, and can also include embodiments in which an additional feature is formed between the first feature and the second feature, such that the first feature and the second feature can not directly contact each other. Additionally, the present disclosure can refer to subject matter in various examples using the same reference numbers and / or terminology. This repetition is for the purpose of simplicity and clarity and does not necessarily serve as a primary guide for a skilled artisan to follow in order to make and use various embodiments and / or configurations of the subject matter described herein.

[0054] Moreover, spatially relative terms, such as "beneath", "below", "lower", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0055] A photonic integrated circuit of a semiconductor photonic device can include a waveguide structure and an optical modulator structure. The waveguide structure and the optical modulator structure can be included in one or more dielectric layers of the semiconductor photonic device. The resonance wavelength of the optical modulator structure can be very sensitive to variations in the process and operating temperature. To stabilize the resonance wavelength of the optical modulator structure, a modulation heater structure can be disposed proximate to the optical modulator structure to provide heat to the optical modulator structure. The heat provided by the modulation heater structure can enable the operating temperature of the optical modulator structure to be maintained at a constant operating temperature during operation of the semiconductor photonic device.

[0056] When some of the heat generated by the modulation heater structure is transported to the optical modulator structure, the dielectric layer surrounding the modulation heater structure can also absorb the heat generated by the modulation heater structure (e.g., heat that would otherwise be used to heat the optical modulator structure). This can result in the modulation heater structure being less efficient in operation, requiring a greater amount of heat to be generated to compensate for the heat loss due to the absorption of heat in the dielectric layer, thereby increasing the power consumption of the semiconductor photonic device.

[0057] In some embodiments described herein, a semiconductor photonic device includes an optical modulator structure and a modulation heater structure. In some embodiments, the modulation heater structure includes one or more heater portions that are disposed side-by-side with the optical modulator structure, rather than (or in addition to) being disposed above or below the optical modulator structure. The horizontal arrangement of the optical modulator structure and the modulation heater structure can enable the modulation heater structure to be disposed closer to the optical modulator structure, enabling more of the heat generated by the modulation heater structure to be provided to the optical modulator structure. The horizontal arrangement of the optical modulator structure and the modulation heater structure can increase the operational efficiency of the modulation heater structure, enabling lower heat loss despite the absorption of heat in the dielectric layer surrounding the optical modulator structure, thereby reducing the power consumption of the semiconductor photonic device.

[0058] Additionally and / or alternatively, in some embodiments, the modulated heater structure described herein includes an upper view shape and / or one or more materials that improve the heating efficiency of the modulated heater structure. Examples of such upper view shapes include a coil shape, a square wave shape, a rectangular wave shape, and / or other types of upper view shapes having a plurality of segments to increase the surface area from which heat is radiated from the modulated heater structure. Examples of such materials include doped semiconductor materials, metal silicide materials, graphene, and / or p-type and n-type materials (e.g., heating based on the thermoelectric effect), among others. The upper view shapes and / or materials described herein can enable the modulated heater structure to efficiently heat the optical modulator structure to control the resonant wavelength of the optical modulator structure, reduce power consumption, and increase power supply power in a semiconductor photonic device having the modulated heater structure.

[0059] Figure 1 is a schematic diagram of an example 100 of the photonic integrated circuit 102 described herein. Figure 1 is an upper view of the photonic integrated circuit 102. The photonic integrated circuit 102 includes a waveguide structure 104 optically and / or physically coupled to an optical modulator structure 106. The photonic integrated circuit 102 can also include other waveguide structures 108, where the waveguide structure 104 and the waveguide structure 108 are coupled to the optical modulator structure 106 at opposite ends of the optical modulator structure 106.

[0060] The photonic integrated circuit 102 can include a Mach-Zehnder modulator (MZM) structure or other type of optical modulation integrated circuit that couples optical signals (e.g., an input optical signal, a modulated optical signal) between one or more waveguides (e.g., the waveguide structure 104 and / or the waveguide structure 108) and the optical modulator structure 106. The waveguide structure 104 can correspond to an input waveguide to provide the optical signal to the optical modulator structure 106, and the waveguide structure 108 can correspond to an output waveguide to receive the modulated optical signal from the optical modulator structure 106. Thus, the optical signal is transmitted in the x-direction through the photonic integrated circuit 102. Figure 1 The x-direction shown can be transmitted through the photonic integrated circuit 102.

[0061] Each of the waveguide structures 104 and 108 can include a substantially straight structure of silicon (Si), germanium (Ge), and / or other waveguide material capable of transmitting an optical signal. Each of the waveguide structures 104 and 108 can extend in the x-direction.

[0062] The optical modulator structure 106 can include silicon or other type of semiconductor material, and can be coupled to the waveguide structure 104 and the waveguide structure 108 in the x-direction. Figure 1The y-direction shown can include optical modulator segments 110a and 110b that are separated from each other. The endpoints of the optical modulator segments 110a and 110b are coupled to the waveguide structure 104, and an optical signal received from the waveguide structure 104 is split between the optical modulator segments 110a and 110b. This enables different voltage inputs to be used for transmitting the optical signal through the optical modulator segments 110a and 110b. Each of the optical modulator segments 110a and 110b can include a P-N (p-type / n-type) junction that enables a voltage input to modulate the refractive index in the optical modulator segment 110a and 110b, thus enabling the optical modulator structure 106 to modulate the optical signal transmitted through the optical modulator segments 110a and 110b. The modulated optical signals can be combined and provided to the waveguide structure 108.

[0063] As described above, Figure 1 An example is provided. Other examples can and Figure 1 vary from the described example.

[0064] Figure 2A and Figure 2B are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices including photonic integrated circuits. Figure 2A is a top view of an example 200 of a photonic integrated circuit 202. The photonic integrated circuit 202 is similar to the photonic integrated circuit 102 shown in Figure 1 , and includes a waveguide structure 204, an optical modulator structure 206, and a waveguide structure 208. The optical modulator structure 206 includes optical modulator segments 210a and 210b.

[0065] As Figure 2A further shown, the example 200 further includes a modulation heater structure 212 proximate to the optical modulator structure 206. The modulation heater structure 212 can be configured to provide heat to the optical modulator structure 206 to stabilize an operating temperature of the optical modulator structure 206, enabling a resonance wavelength of the optical modulator structure 206 to be stable during operation of the optical modulator structure 206. The modulation heater structure 212 includes heater portions 212a-212c, each of which is positioned at least one side of an optical modulator segment 210a and / or 210b of an adjacent optical modulator structure 206. For example, the heater portion 212a can be positioned outside of an adjacent (or alongside) optical modulator segment 210a. As another example, the heater portion 212b can be positioned outside of an adjacent (or proximate to) optical modulator segment 210b. As another example, the heater portion 212c can be positioned inside of adjacent (or alongside) optical modulator segments 210a and 210b.

[0066] The heater portions 212a-212c can extend along the sides of the optical modulator sections 210a and 210b in the x-direction. An electrical input such as a voltage and / or a current can be provided to each of the heater portions 212a-212c, and the heater portions 212a-212c can dissipate the electrical input in the form of heat from the heater portions 212a-212c to the optical modulator sections 210a and 210b. The heater portions 212a-212c can include one or more materials capable of generating heat from the electrical input. In some embodiments, each of the heater portions 212a-212c can include one or more metals such as tungsten (W), copper (Cu), aluminum (Al), other metals, and / or alloys thereof. In some embodiments, the heater portions 212a-212c can include other materials such as silicon, silicon doped with one or more dopant types (e.g., p-type dopants such as boron (B), aluminum (Al), and / or gallium (Ga), etc.; n-type dopants such as phosphorus (P), arsenic (As), and / or antimony (Sb), etc.), metal silicides (e.g., tungsten silicide (WSi), titanium silicide (TiSi)), graphene, and / or barrier metals such as tantalum nitride (TaN) and / or titanium nitride (TiN), etc.

[0067] Figure 2B is an example 214 of a semiconductor photonic device 216 including the photonic integrated circuit 202 and its associated modulating heater structure 212. Figure 2B is a cross-sectional view along the line A-A in Figure 2A . In particular, the cross-sectional view is across the optical modulator sections 210a and 210b and the heater portions 212a-212c in the y-direction. Thus, Figure 2B is a cross-sectional view of the semiconductor photonic device 216 in the y-z plane.

[0068] As Figure 2BAs shown, the semiconductor photonic device 216 can include a plurality of dielectric layers, including dielectric layers 218, 220, 222, and / or 224, among others. The dielectric layer 218 can be considered a shallow trench isolation (STI) layer and can provide electrical and / or optical isolation between the optical modulator sections 210a and 210b of the optical modulator structure 206, and / or between the optical modulator sections 210a and 210b and the heater portions 212a-212c, among others. The dielectric layers 220 and 222 can include etch stop layers (ESLs), passivation layers, insulating layers, and / or other types of dielectric layers. The dielectric layer 224 can include an interlayer dielectric (ILD) layer in which one or more metallization layers are formed. On the dielectric layer 224 can be included a metallization layer 226, which can be configured to provide electronic signals and / or power to the optical modulator structure 206 and / or the modulation heater structure 212, among others, and / or the metallization layer 226 can be configured to obtain electronic signals and / or power from the optical modulator structure 206 and / or the modulation heater structure 212, among others.

[0069] The dielectric layers 218, 220, 222, and / or 224 can include one or more dielectric materials, such as silicon oxide (SiOx), silicon nitride (SixNy), silicon oxynitride (SiON), tetraethyl orthosilicate oxide, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silica glass (FSG), carbon-doped silicon oxide, and / or other dielectric materials. In some embodiments, two or more of the dielectric layers 218, 220, 222, and / or 224 include the same dielectric material and / or the same composition of dielectric material. In some embodiments, two or more of the dielectric layers 218, 220, 222, and / or 224 include different dielectric materials and / or different compositions of dielectric material.

[0070] The metallization layer 226 can include one or more electrically conductive metals, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), or gold (Au), among others. The metallization layer 226 can include one or more vias, one or more trenches, one or more contact plugs, one or more conductive traces, and / or other types of electrically conductive structures.

[0071] AsFigure 2B Further shown, the optical modulator sections 210a and 210b and the heater portions 212a-212c are contained in the dielectric layer 218. In the semiconductor photonic device 216, the heater portions 212a-212c are laterally adjacent to the optical modulator sections 210a and 210b in the y-direction, rather than being located above the optical modulator sections 210a and 210b in the dielectric layer 224. This enables the heater portions 212a-212c to directly radiate heat laterally towards the optical modulator sections 210a and 210b in the dielectric layer 218, rather than vertically radiating heat towards the optical modulator sections 210a and 210b via the dielectric layers 220, 222, and 224. This can improve the heating efficiency of the modulation heater structure 212.

[0072] The top surfaces of the optical modulator sections 210a and 210b and the heater portions 212a-212c can be coplanar in the dielectric layer 218. In some embodiments, the bottom surfaces of the optical modulator sections 210a and 210b and the heater portions 212a-212c can be coplanar in the dielectric layer 218. In some embodiments, in the semiconductor photonic device 216, the bottom surfaces of the heater portions 212a-212c can be disposed at a lower position in the z-direction than the bottom surfaces of the optical modulator sections 210a and 210b. In some embodiments, in the semiconductor photonic device 216, the bottom surfaces of the optical modulator sections 210a and 210b can be disposed at a lower position in the z-direction than the bottom surfaces of the heater portions 212a-212c.

[0073] As described above, Figure 2A and Figure 2B Examples are provided. Other examples can differ Figure 2A and Figure 2B as described.

[0074] Figures 3A-3G is a schematic diagram of an example 300 of forming the semiconductor photonic device 216 described herein. In particular, the example 300 includes an example of forming the photonic integrated circuit 202 and its associated modulation heater structure 212 in the semiconductor photonic device 216. In some embodiments, in the example 300, the semiconductor photonic device 216 is formed using one or more semiconductor processing tools, such as a deposition tool, an exposure tool, a development tool, an etching tool, an electroplating tool, a planarization tool, an ion implantation tool, a wafer / wafer transfer tool, and / or other types of semiconductor processing tools. Figures 3A-3G The one or more semiconductor processing operations described in

[0075] Returning to Figure 3AA substrate 302 is provided. The substrate 302 may comprise a silicon-on-insulator (SOI) substrate, which includes a semiconductor substrate 304 (such as a silicon substrate and / or other types of semiconductor substrates), a portion of a dielectric layer 218 (such as a buried oxide or bottom oxide (BOX) layer and / or other types of insulating layer) on and / or above the semiconductor substrate 304, and a semiconductor layer 306 (such as a silicon layer and / or other types of semiconductor layer) on and / or above the portion of the dielectric layer 218. Alternatively, the semiconductor substrate 304 may be provided as a semiconductor wafer, and a portion of the dielectric layer 218 may be formed on and / or above the semiconductor substrate 304 using deposition tools, and the semiconductor layer 306 may be formed on and / or above the portion of the dielectric layer 218. A portion of the dielectric layer 218 can be deposited using deposition tools employing chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation techniques (such as thermal oxidation), and / or other types of deposition techniques. A semiconductor layer 306 can be formed using epitaxial techniques and / or other types of deposition techniques.

[0076] like Figure 3B As shown, an optical modulator structure 206 (including optical modulator segments 210a and 210b) can be formed in the semiconductor layer 306, such that the optical modulator structure 206 is located on a portion of the dielectric layer 218. Waveguide structures 204 and 208 (not shown in the cross-sectional view along line AA) can also be formed in the semiconductor layer 306 on the portion of the dielectric layer 218 along the optical modulator structure 206.

[0077] In some embodiments, a hard mask layer may be formed on and / or over the semiconductor layer 306. Patterns in the hard mask layer may be used to etch the semiconductor layer 306 to form an optical modulator structure 206 (and waveguide structures 204 and 208). Deposition tools may be used to deposit the hard mask layer on the semiconductor layer 306 (e.g., using CVD, PVD, and / or other types of deposition techniques), and to deposit a photoresist layer on the hard mask layer (e.g., using spin-coating and / or other types of deposition techniques). The hard mask layer may comprise silicon nitride (SixNy, such as Si3N4) or other hard mask materials. The photoresist layer may comprise a photosensitive material, which may be patterned using exposure tools such as deep ultraviolet (DUV) lithography tools and / or extreme ultraviolet (EUV) lithography tools.

[0078] Exposure tools can be used to expose a photoresist layer to a radiation source to form a pattern within the photoresist layer. Developing tools can be used to develop and remove portions of the photoresist layer to expose the pattern. Etching tools can be used to etch a hard mask layer to transfer the pattern from the photoresist layer to the hard mask layer. Subsequently, etching tools can be used to etch the semiconductor layer 306 based on the pattern in the hard mask layer to remove material from the semiconductor layer 306 to form the optical modulator structure 206 (and waveguide structures 204 and 208). In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or other types of etching operations. In some embodiments, photoresist removal tools remove the remaining portion of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or other techniques).

[0079] like Figure 3C As shown, additional material for dielectric layer 218 may be deposited around optical modulator structure 206 (and waveguide structures 204 and 208) using CVD, PVD, oxidation, and / or other types of deposition techniques. In some embodiments, additional material for dielectric layer 218 may also be deposited on optical modulator structure 206 (and waveguide structures 204 and 208), and planarization operations (e.g., chemical mechanical polishing / planarization, CMP) may be performed using planarization tools to planarize dielectric layer 218 such that the top surface of dielectric layer 218 and the top surface of optical modulator structure 206 (and waveguide structures 204 and 208) are approximately coplanar.

[0080] likeFigure 3D As shown, recesses 308, 310, and 312 are formed in the dielectric layer 218 proximate to the optical modulator sections 210a and 210b of the optical modulator structure 206. For example, the recess 308 can be formed on the outside of the optical modulator section 210a in the adjacent dielectric layer 218. As another example, the recess 310 can be formed on the outside of the optical modulator section 210b in the adjacent dielectric layer 218. As another example, the recess 312 can be formed on the inside of the optical modulator sections 210a and 210b in the adjacent dielectric layer 218.

[0081] In some embodiments, the pattern in the photoresist layer is used to etch the dielectric layer 218 to form the recesses 308, 310, and / or 312. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric layer 218. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric layer 218 based on the pattern to form the recesses 308, 310, and / or 312 in the dielectric layer 218. In some embodiments, the etching operation includes a plasma etching operation, a wet chemical etching operation, and / or other types of etching operations. In some embodiments, a photoresist removal tool can be used to remove remaining portions of the photoresist layer (e.g., using a chemical stripper, a plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique to etch the dielectric layer 218 based on the pattern.

[0082] In some embodiments, the bottom surface of the recesses 308, 310, and / or 312 is approximately coplanar with the bottom surface of the optical modulator sections 210a and / or 210b. In some embodiments, in the semiconductor photonic device 216, the bottom surface of the recesses 308, 310, and / or 312 is lower in the z-direction than the bottom surface of the optical modulator sections 210a and / or 210b. In some embodiments, in the semiconductor photonic device 216, the bottom surface of the recesses 308, 310, and / or 312 is higher in the z-direction than the bottom surface of the optical modulator sections 210a and / or 210b.

[0083] As Figure 3EAs shown, a modulation heater structure 212 is formed in recesses 308, 310, and / or 312, such that the modulation heater structure 212 is formed at a position laterally adjacent (or side-by-side) to the optical modulator structure 206 in the dielectric layer 218. A heater portion 212a of the modulation heater structure 212 may be formed in recess 308, such that the heater portion 212a is located outside of the optical modulator segment 210a laterally adjacent in the dielectric layer 218. A heater portion 212b of the modulation heater structure 212 may be formed in recess 310, such that the heater portion 212b is located outside of the optical modulator segment 210b laterally adjacent in the dielectric layer 218. A heater portion 212c of the modulation heater structure 212 may be formed in recess 312, such that the heater portion 212c is located inside the optical modulator segments 210a and 210b laterally adjacent in the dielectric layer 218.

[0084] Deposition tools and / or electroplating tools may be used to deposit the heater portions 212a-212c of the modulated heater structure 212 using CVD, PVD, atomic layer deposition (ALD), electroplating, and / or other suitable deposition techniques. The heater portions 212a-212c of the modulated heater structure 212 may be deposited in one or more deposition operations. In some embodiments, a seed layer is first deposited, and the heater portions 212a-212c of the modulated heater structure 212 are deposited on the seed layer. In some embodiments, after depositing the heater portions 212a-212c of the modulated heater structure 212, a planarization tool may be used to planarize the heater portions 212a-212c of the modulated heater structure 212.

[0085] like Figure 3F As shown, a dielectric layer 220 may be formed on and / or above dielectric layer 218. Dielectric layer 220 may also be formed on and / or above optical modulator sections 210a and 210b of optical modulator structure 206, and on and / or above heater portions 212a-212c of modulated heater structure 212. A dielectric layer 222 may be formed on and / or above dielectric layer 220. A dielectric layer 224 may be formed on and / or above dielectric layer 222.

[0086] Deposition tools can be used to deposit dielectric layers 220, 222, and / or 224 using CVD, PVD, ALD, oxidation, and / or other suitable deposition techniques. Each dielectric layer 220, 222, and / or 224 can be deposited in one or more deposition operations. In some embodiments, after depositing dielectric layers 220, 222, and / or 224, a planarization tool can be used to planarize the dielectric layers 220, 222, and / or 224.

[0087] like Figure 3G As shown, a metallization layer 226 may be formed on the dielectric layer 224. Additionally and / or alternatively, a recess in the dielectric layer 224 may form the metallization layer 226. In some embodiments, one or more metallization layers (not shown in the cross-sectional view along line AA) are formed in the dielectric layer 224 as contacts for the optical modulator structure 206 and / or the modulator heater structure 212. Deposition tools and / or electroplating tools deposit the metallization layer 226 using CVD, PVD, ALD, electroplating, and / or other suitable deposition techniques. The metallization layer 226 may be deposited in one or more deposition operations. In some embodiments, a seed layer is first deposited, and the metallization layer 226 is deposited on the seed layer. In some embodiments, after depositing the metallization layer 226, a planarization tool may be used to planarize the metallization layer 226.

[0088] As mentioned above, Figure 3A and Figure 3G Examples are provided. Other examples are available. Figure 3A and Figure 3G The differences are explained.

[0089] Figure 4A and Figure 4B This is a schematic diagram of an example relating to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits. Figure 4A This is a top view of Example 400 of the photonic integrated circuit 402. The photonic integrated circuit 402 and... Figure 1 The photonic integrated circuit 102 shown is similar and includes a waveguide structure 404, an optical modulator structure 406, and a waveguide structure 408. The optical modulator structure 406 includes optical modulator segments 410a and 410b. (As shown...) Figure 4A As further shown, Example 400 further includes a modulation heater structure 412 adjacent to the optical modulator structure 406. The modulation heater structure 412 includes heater portions 412a-412c, which are arranged in a top view configuration similar to that of heater portions 212a-212c.

[0090] Figure 4B Example 414 is a semiconductor photonic device 416 that may include a photonic integrated circuit 402 and its associated modulation heater structure 412. Figure 4B It is along Figure 4A A cross-sectional view of line BB in the diagram. Specifically, this cross-sectional view spans the optical modulator sections 410a and 410b and the heater sections 412a-412c in the y-direction. Therefore, Figure 4B This is a cross-sectional view in the yz plane of the semiconductor photonic device 416.

[0091] likeFigure 4B As shown, the semiconductor photonic device 416 is similar to the semiconductor photonic device 216 and includes dielectric layers 418, 420, 422, and / or 424 and a metallization layer 426. Moreover, the optical modulator sections 410a and 410b and the heater portions 412a-412c are arranged in the semiconductor photonic device 416 similar to the optical modulator sections 210a and 210b and the heater portions 212a-212c in the semiconductor photonic device 216, except that the heater portions 412a-412c extend in the z-direction through the dielectric layers 420, 422, and 424 to the metallization layer 426. This enables the formation of the heater portions 412a-412c to be combined with the formation of electrical contacts in the semiconductor photonic device 416 (e.g., electrical contacts for the photonic integrated circuit 402), reducing manufacturing costs, time, and / or complexity for forming the semiconductor photonic device 416.

[0092] As described above, Figure 4A and Figure 4B Examples are provided. Other examples can differ Figure 4A and Figure 4B as described.

[0093] Figures 5A-5G is a schematic diagram of an example 500 of forming the semiconductor photonic device 416 described herein. In particular, the example 500 includes forming the photonic integrated circuit 402 and its associated modulated heater structure 412 in the semiconductor photonic device 416. In some embodiments, one or more semiconductor process operations described in the example 500 are performed using one or more semiconductor process tools, such as a deposition tool, an exposure tool, a development tool, an etch tool, a plating tool, a planarization tool, an ion implantation tool, a wafer / wafer transfer tool, and / or other types of semiconductor process tools. Figures 5A-5G is a schematic diagram of an example 500 of forming the semiconductor photonic device 416 described herein. In particular, the example 500 includes forming the photonic integrated circuit 402 and its associated modulated heater structure 412 in the semiconductor photonic device 416. In some embodiments, one or more semiconductor process operations described in the example 500 are performed using one or more semiconductor process tools, such as a deposition tool, an exposure tool, a development tool, an etch tool, a plating tool, a planarization tool, an ion implantation tool, a wafer / wafer transfer tool, and / or other types of semiconductor process tools.

[0094] Returning to Figure 5A , a substrate 502 is provided. The substrate 502 can include an SOI substrate including a semiconductor substrate 504, a portion of a dielectric layer 418 on and / or over the semiconductor substrate 504, and a semiconductor layer 506 on and / or over the portion of the dielectric layer 418. Alternatively, the semiconductor substrate 504 can be provided as a semiconductor wafer, and the portion of the dielectric layer 418 can be formed on and / or over the semiconductor substrate 504 using a deposition tool, and the semiconductor layer 506 can be formed on and / or over the portion of the dielectric layer 418.

[0095] As Figure 5B and Figure 5CAs shown, an optical modulator structure 406 (including optical modulator segments 410a and 410b) can be formed in the semiconductor layer 506, such that the optical modulator structure 406 is located on a portion of the dielectric layer 418. Waveguide structures 404 and 408 (not shown in a cross-sectional view along line BB) can also be formed in the semiconductor layer 506 on the portion of the dielectric layer 418, along the optical modulator structure 406. Additional material of the dielectric layer 418 can be deposited around the optical modulator structure 406 (and waveguide structures 404 and 408). Figure 3B and Figure 3C The similar process operations and / or techniques described above can be used as additional materials to form the optical modulator structure 406 and the dielectric layer 418.

[0096] like Figure 5D As shown, with Figure 3F The similar method described above can form dielectric layer 420 on and / or above dielectric layer 420, dielectric layer 422 on and / or above dielectric layer 422, and dielectric layer 424 on and / or above dielectric layer 422. However, dielectric layer 420 is formed on and / or above optical modulator sections 410a and 410b of optical modulator structure 406 before the formation of heater portions 412a-412c of modulator heater structure 412. This is because heater portions 412a-412c of modulator heater structure 412 are formed as part of the contact formation process of semiconductor photonic device 416.

[0097] like Figure 5E and Figure 5F As shown, a contact forming process can be performed to form heater portions 412a-412c and contacts (not shown in the cross-sectional view along line BB) of a modulation heater structure 412 for a photonic integrated circuit 402. Heater portions 412a-412c can also serve as contacts for the modulation heater structure 412.

[0098] like Figure 5E As shown, the contact forming process may include forming recesses 508, 510, and 512 that extend through dielectric layers 424, 422, and 420 and into a portion of dielectric layer 418 adjacent to optical modulator sections 410a and 410b of the optical modulator structure 406. For example, recess 508 may be formed outside optical modulator section 410a in the adjacent dielectric layer 418. As another example, recess 510 may be formed outside optical modulator section 410b in the adjacent dielectric layer 418. As another example, recess 512 may be formed inside optical modulator sections 410a and 410b in the adjacent dielectric layer 418.

[0099] In some embodiments, the pattern in the photoresist layer is used to etch dielectric layers 418, 420, 422, and / or 424 to form recesses 508, 510, and / or 512. In these embodiments, a deposition tool can be used to form the photoresist layer on dielectric layer 424. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch dielectric layers 418, 420, 422, and / or 424 based on the pattern to form recesses 508, 510, and / or 512. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or other types of etching operations. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using a chemical stripper, plasma ashing agent, and / or other techniques). In some embodiments, a hard mask layer is used based on the pattern as an alternative technique for forming recesses 508, 510, and / or 512.

[0100] In some embodiments, the bottom surfaces of recesses 508, 510, and / or 512 are approximately coplanar with the bottom surfaces of optical modulator sections 410a and / or 410b. In some embodiments, in the semiconductor photonic device 416, the bottom surfaces of recesses 508, 510, and / or 512 are lower than the bottom surfaces of optical modulator sections 410a and / or 410b in the z-direction. In some embodiments, in the semiconductor photonic device 416, the bottom surfaces of recesses 508, 510, and / or 512 are higher than the bottom surfaces of optical modulator sections 410a and / or 410b in the z-direction.

[0101] like Figure 5F As shown, a modulation heater structure 412 is formed in recesses 508, 510, and / or 512, such that the modulation heater structure 412 extends through dielectric layers 420, 422, and 424 and into dielectric layer 418. A heater portion 412a of the modulation heater structure 412 is formed in recess 508, such that the heater portion 412a is laterally adjacent to the outer side of the optical modulator segment 410a in dielectric layer 418. A heater portion 412b of the modulation heater structure 412 is formed in recess 510, such that the heater portion 412b is laterally adjacent to the outer side of the optical modulator segment 410b in dielectric layer 418. A heater portion 412c of the modulation heater structure 412 is formed in recess 512, such that the heater portion 412c is laterally adjacent to the inner side of the optical modulator segments 410a and 410b in dielectric layer 418.

[0102] like Figure 5GAs shown, a metallization layer 426 can be formed on the dielectric layer 424. Additionally and / or alternatively, recesses in the dielectric layer 424 can form the metallization layer 426. The partial metallization layer 426 is formed on the heater portions 412a-412c of the modulating heater structure 412 such that the heater portions 412a-412c of the modulating heater structure 412 are electrically and / or physically coupled to the metallization layer 426. The metallization layer 426 can be formed of any suitable material, such as copper, silver, gold, aluminum, and / or the like. The metallization layer 426 can be formed by any suitable process, such as electroplating, electroless plating, sputtering, and / or the like. Figure 3G The metallization layer 226 is formed in a similar manner as described.

[0103] As described above, Figure 5A and Figure 5G Examples are provided. Other examples can use Figure 5A and Figure 5G are described.

[0104] Figure 6A and Figure 6B are schematic diagrams of examples related to photonic integrated circuits and semiconductor photonic devices including photonic integrated circuits. Figure 6A is a top view of an example 600 of a photonic integrated circuit 602. The photonic integrated circuit 602 is similar to the photonic integrated circuit 102 shown in Figure 1 and includes a waveguide structure 604, an optical modulator structure 606, and a waveguide structure 608. The optical modulator structure 606 includes optical modulator sections 610a and 610b.

[0105] As Figure 6A further shown, the example 600 further includes a modulating heater structure 612 proximate to the optical modulator structure 606. The modulating heater structure 612 includes heater portions 612a-612c arranged in a similar top view configuration as the heater portions 212a-212c. However, the modulating heater structure 612 further includes a connecting heater portion 612d above the heater portions 612a-612c. The connecting heater portion 612d extends in the y-direction across the optical modulator sections 610a and 610b and the heater portions 612a-612c. The connecting heater portion 612d connects the heater portions 612a-612c to form a continuous structure of the modulating heater structure 612.

[0106] Figure 6B is an example 614 of a semiconductor photonic device 616 that can include the photonic integrated circuit 602 and its associated modulating heater structure 612. Figure 6B is a cross-sectional view along line C-C in Figure 6A . In particular, this cross-sectional view is across the optical modulator sections 610a and 610b and the heater portions 612a-612c in the y-direction. Thus, Figure 6BThis is a cross-sectional view in the yz plane of the semiconductor photonic device 616.

[0107] like Figure 6B As shown, semiconductor photonic device 616 is similar to semiconductor photonic device 216 and includes dielectric layers 618, 620, 622 and / or 624 and a metallization layer 626. Furthermore, the arrangement of optical modulator segments 610a and 610b and heater portions 612a-612c in semiconductor photonic device 616 is similar to that in semiconductor photonic device 216, except that heater portions 612a-612c extend through dielectric layer 620 in the z-direction. Additionally, a connecting heater portion 612d is contained in dielectric layer 622 and extends above optical modulator segments 610a and 610b, and is connected to heater portions 612a-612c. This results in the modulation heater structure 612 having an approximately trident shape in a cross-sectional view along line CC, wherein heater portions 612a-612c extend downward along the z-direction from the connecting heater portion 612d along the optical modulator sections 610a and 610b of the optical modulator structure 606. This allows the modulation heater structure 612 to radiate heat to at least three sides of the optical modulator sections 610a and 610b, which allows the heat generated by the modulation heater structure 612 to be more evenly distributed on the optical modulator structure 606. Specifically, heater portions 612a and 612c can radiate heat to the outer and inner sides of the optical modulator section 610a, respectively, and the connecting heater portion 612d can radiate heat to the top side of the optical modulator section 610a. Similarly, heater portions 612b and 612c can radiate heat to the outer and inner sides of the optical modulator section 610b, respectively, and the heater portion 612d can radiate heat to the top side of the optical modulator section 610b.

[0108] As mentioned above, Figure 6A and Figure 6B Examples are provided. Other examples are available. Figure 6A and Figure 6B The differences are explained.

[0109] Figures 7A-7H This is a schematic diagram of an example 700 illustrating the formation of a semiconductor photonic device 616. Specifically, example 700 includes the formation of a photonic integrated circuit 602 and its associated modulation heater structure 612 within the semiconductor photonic device 616. In some embodiments, in Figures 7A-7H The one or more semiconductor process operations described herein are performed using one or more semiconductor process tools, such as deposition tools, exposure tools, development tools, etching tools, electroplating tools, planarization tools, ion implantation tools, wafer / wafer transfer tools and / or other types of semiconductor process tools.

[0110] Returning to Figure 7A The substrate 702 can be provided. The substrate 702 can include an SOI substrate including the semiconductor substrate 704, the portion of the dielectric layer 618 on and / or over the semiconductor substrate 704, and the semiconductor layer 706 on and / or over the portion of the dielectric layer 618. Alternatively, the semiconductor substrate 704 can be provided as a semiconductor wafer, and the portion of the dielectric layer 618 can be formed on and / or over the semiconductor substrate 704 using a deposition tool, and the semiconductor layer 706 can be formed on and / or over the portion of the dielectric layer 618.

[0111] As shown in Figure 7B and Figure 7C the optical modulator structure 606 (including the optical modulator segments 610a and 610b) can be formed in the semiconductor layer 706 on the portion of the dielectric layer 618. The waveguide structures 604 and 608 (not shown in the cross-sectional view along line C-C) can also be formed in the semiconductor layer 706 on the portion of the dielectric layer 618 along the optical modulator structure 606. Additional material of the dielectric layer 618 can be deposited around the optical modulator structure 606 (and the waveguide structures 604 and 608). Figure 3B and Figure 3C Similar process operations and / or techniques described can be used to form the optical modulator structure 606 and the additional material of the dielectric layer 618.

[0112] As further shown in Figure 7C the dielectric layer 620 can be formed on and / or over the dielectric layer 618 and the optical modulator structure 606. In Figure 3F Similar methods described can be used to form the dielectric layer 620, except that the dielectric layer 620 is formed on and / or over the optical modulator segments 610a and 610b of the optical modulator structure 606 prior to formation of the heater portions 612a-612c of the modulation heater structure 612.

[0113] As shown in Figure 7D the recesses 708, 710, and 712 through the dielectric layer 620 and into the portion of the dielectric layer 618. The recesses 708, 710, and 712 extend along the optical modulator segments 610a and 610b of the optical modulator structure 606. For example, the recess 708 can be formed outside of the optical modulator segment 610a in the adjacent dielectric layer 618. As another example, the recess 710 can be formed outside of the optical modulator segment 610b in the adjacent dielectric layer 618. As another example, the recess 712 can be formed inside of the optical modulator segments 610a and 610b in the adjacent dielectric layer 618.

[0114] In some embodiments, the pattern in the photoresist layer is used to etch dielectric layers 618 and / or 620 to form recesses 708, 710, and / or 712. In these embodiments, a deposition tool can be used to form the photoresist layer on dielectric layer 620. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch dielectric layers 618 and / or 620 based on the pattern to form recesses 708, 710, and / or 712. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or other types of etching operations. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using chemical strippers, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used based on the pattern as an alternative technique for forming recesses 708, 710, and / or 712.

[0115] In some embodiments, the bottom surfaces of recesses 708, 710, and / or 712 are approximately coplanar with the bottom surfaces of optical modulator sections 610a and / or 610b. In some embodiments, in the semiconductor photonic device 616, the bottom surfaces of recesses 708, 710, and / or 712 are lower than the bottom surfaces of optical modulator sections 610a and / or 610b in the z-direction. In some embodiments, in the semiconductor photonic device 616, the bottom surfaces of recesses 708, 710, and / or 712 are higher than the bottom surfaces of optical modulator sections 610a and / or 610b in the z-direction.

[0116] like Figure 7E As shown, heater portions 612a-612c of the modulation heater structure 612 are formed in recesses 708, 710, and / or 712, respectively, such that the modulation heater structure 612 extends through the dielectric layer 620 and into the dielectric layer 618. Heater portion 612a of the modulation heater structure 612 is formed in recess 708, such that heater portion 612a is located laterally adjacent to the outer side of optical modulator segment 610a in the dielectric layer 618. Heater portion 612b of the modulation heater structure 612 is formed in recess 710, such that heater portion 612b is located laterally adjacent to the outer side of optical modulator segment 610b in the dielectric layer 618. Heater portion 612c of the modulation heater structure 612 is formed in recess 712, such that heater portion 612c is located laterally adjacent to the inner side of optical modulator segments 610a and 610b in the dielectric layer 618. Figure 7E As further shown, a heater layer 714 may be formed on the dielectric layer 620, such that the heater layer 714 is coupled to the heater portions 612a-612c.

[0117] Deposition tools and / or electroplating tools may be used to deposit heater portions 612a-612c and heater layer 714 using CVD, PVD, ALD, electroplating, and / or other suitable deposition techniques. In some embodiments, a planarization tool may be used to planarize heater layer 714 after deposition.

[0118] like Figure 7F As shown, a portion of the removable heater layer 714 defines the connecting heater portion 612d of the modulation heater structure 612. In some embodiments, a pattern in the hard mask layer is used to remove a portion of the heater layer 714 to define the connecting heater portion 612d of the modulation heater structure 612. In some embodiments, a pattern in the photoresist layer is used to remove a portion of the heater layer 714 to define the connecting heater portion 612d of the modulation heater structure 612. Additionally and / or alternatively, a dielectric layer 622 may be formed on the dielectric layer 620, a recess may be formed in the dielectric layer 622, and the connecting heater portion 612d may be formed in the recess, such that the recess defines the connecting heater portion 612d.

[0119] like Figure 7G As shown, a dielectric layer 622 may be formed on and / or above the connecting heater portion 612d of the dielectric layer 620 and / or the modulated heater structure 612. A dielectric layer 624 may be formed on and / or above the dielectric layer 622. Dielectric layers 622 and 624 may... Figure 3F It is formed using a similar method described in [the text].

[0120] like Figure 7H As shown, a metallization layer 626 can be formed on the dielectric layer 624. Additionally and / or alternatively, a metallization layer 626 can be formed in a recess within the dielectric layer 624. The metallization layer 626 can... Figure 3G The metallization layer 226 is formed using a similar method.

[0121] As mentioned above, Figure 7A and Figure 7H Examples are provided. Other examples are available. Figure 7A and Figure 7H The differences are explained.

[0122] Figure 8A and Figure 8B This is a schematic diagram of an example relating to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits. Figure 8A This is a top view of Example 800 of the photonic integrated circuit 802. The photonic integrated circuit 802 is related to... Figure 1 The photonic integrated circuit 102 shown is similar and includes a waveguide structure 804, an optical modulator structure 806, and a waveguide structure 808. The optical modulator structure 806 includes optical modulator segments 810a and 810b.Figure 8A Further shown, example 800 further includes a modulation heater structure 812 proximate to optical modulator structure 806. Modulation heater structure 812 is similar to modulation heater structure 612 and includes heater portions 812a-812c and a connecting heater portion 812d. Figure 6A and Figure 6B Modulation heater structure 612. Modulation heater structure 812 includes heater portions 812a-812c and a connecting heater portion 812d.

[0123] Figure 8B is an example 814 of a semiconductor photonic device 816 that can include photonic integrated circuit 802 and its associated modulation heater structure 812. Figure 8B is a cross-sectional view along line D-D in Figure 8A Particularly, this cross-sectional view is across optical modulator segments 810a and 810b and heater portions 812a-812c in the y-direction. Thus, Figure 8B is a cross-sectional view in the y-z plane in semiconductor photonic device 816.

[0124] As shown in Figure 8B semiconductor photonic device 816 is similar to semiconductor photonic device 616 and includes dielectric layers 818, 820, 822, and / or 824 and a metallization layer 826. Also, the arrangement of optical modulator segments 810a and 810b, heater portions 812a-812c, and connecting heater portion 812d in semiconductor photonic device 816 is similar to optical modulator segments 610a and 610b, heater portions 612a-612c, and connecting heater portion 612d in semiconductor photonic device 616, respectively. However, in semiconductor photonic device 816, heater portions 812a-812c extend through dielectric layers 820, 822, and 824 in the z-direction. In addition, connecting heater portion 812d is included in dielectric layer 824 (e.g., as opposed to dielectric layer 622 that includes connecting heater portion 612d) and is electrically and / or physically coupled to metallization layer 826. This enables the formation of heater portions 812a-812c and connecting heater portion 812d to be combined with the formation of electrical contacts (e.g., for photonic integrated circuit 802) in semiconductor photonic device 816, reducing manufacturing costs, time, and / or complexity for forming semiconductor photonic device 816.

[0125] As described above, Figure 8A and Figure 8B provide examples. Other examples can differ from what is described. Figure 8A and Figure 8B described.

[0126] Figures 9A-9His a schematic diagram of an example 900 of forming a semiconductor photonic device 816 described herein. In particular, the example 900 includes forming a photonic integrated circuit 802 and its associated modulating heater structure 812 in the semiconductor photonic device 816. In some embodiments, the one or more semiconductor process operations described in Figures 9A-9H The one or more semiconductor process operations described in the

[0127] Returning to Figure 9A , a substrate 902 can be provided. The substrate 902 can include an SOI substrate including a semiconductor substrate 904, a portion of a dielectric layer 818 on and / or over the semiconductor substrate 904, and a semiconductor layer 906 on and / or over the portion of the dielectric layer 818. Alternatively, the semiconductor substrate 904 can be provided as a semiconductor wafer, and a deposition tool can be used to form the portion of the dielectric layer 818 on and / or over the semiconductor substrate 904, and the semiconductor layer 906 can be formed on and / or over the portion of the dielectric layer 818.

[0128] As shown in Figure 9B and Figure 9C , an optical modulator structure 806 (including optical modulator sections 810a and 810b) can be formed in the semiconductor layer 906 such that the optical modulator structure 806 is located on the portion of the dielectric layer 818. Waveguide structures 804 and 808 (not shown in cross-sectional view along line D-D) can also be formed in the semiconductor layer 906 on the portion of the dielectric layer 818 along the optical modulator structure 806. Additional material of the dielectric layer 818 can be deposited around the optical modulator structure 806 (and the waveguide structures 804 and 808). Figure 3B and Figure 3C Similar process operations and / or techniques described can be used to form the optical modulator structure 806 and the additional material of the dielectric layer 818.

[0129] As shown in Figure 9D , similar methods described in Figure 3F may be used to form a dielectric layer 820 on and / or over the dielectric layer 818, a dielectric layer 822 on and / or over the dielectric layer 820, and a dielectric layer 824 on and / or over the dielectric layer 822. However, the dielectric layer 820 is formed on and / or over the optical modulator sections 810a and 810b of the optical modulator structure 806 prior to the formation of the heater portions 812a-812c of the modulating heater structure 812. This is because the heater portions 812a-812c of the modulating heater structure 812 are formed as part of a contact formation process for the semiconductor photonic device 816.

[0130] like Figures 9E-9G As shown, a contact forming process can be performed to form heater portions 812a-812c and connecting heater portion 812d, as well as contacts (not shown in a cross-sectional view along line DD), of a modulation heater structure 812 for use in a photonic integrated circuit 802 and / or other devices in a semiconductor photonic device 816. Heater portions 812a-812c and connecting heater portion 812d can also serve as contacts for the modulation heater structure 812.

[0131] like Figure 9E As shown, the contact forming process may include forming recesses 908, 910, and 912 that extend through dielectric layers 824, 822, and 820 and into a portion of dielectric layer 818 adjacent to optical modulator sections 810a and 810b of the optical modulator structure 806. For example, recess 908 may be formed outside of optical modulator section 810a in the adjacent dielectric layer 818. As another example, recess 910 may be formed outside of optical modulator section 810b in the adjacent dielectric layer 818. As another example, recess 912 may be formed inside optical modulator sections 810a and 810b in the adjacent dielectric layer 818.

[0132] In some embodiments, the pattern in the photoresist layer is used to etch dielectric layers 818, 820, 822, and / or 824 to form recesses 908, 910, and / or 912. In these embodiments, a deposition tool can be used to form the photoresist layer on dielectric layer 824. An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch dielectric layers 818, 820, 822, and / or 824 based on the pattern to form recesses 908, 910, and / or 912. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or other types of etching operations. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using chemical strippers, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used based on the pattern as an alternative technique for forming recesses 908, 910, and / or 912.

[0133] In some embodiments, the bottom surfaces of recesses 908, 910, and / or 912 are approximately coplanar with the bottom surfaces of optical modulator sections 810a and / or 810b. In some embodiments, in the semiconductor photonic device 816, the bottom surfaces of recesses 908, 910, and / or 912 are lower than the bottom surfaces of optical modulator sections 810a and / or 810b in the z-direction. In some embodiments, in the semiconductor photonic device 816, the bottom surfaces of recesses 908, 910, and / or 912 are higher than the bottom surfaces of optical modulator sections 810a and / or 810b in the z-direction.

[0134] like Figure 9F As shown, heater portions 812a-812c of the modulation heater structure 812 are formed in recesses 908, 910, and / or 912, respectively, such that the heater portions 812a-812c of the modulation heater structure 812 extend through dielectric layers 820, 822, and 824 and into dielectric layer 818. Heater portion 812a of the modulation heater structure 812 is formed in recess 908, such that heater portion 812a is laterally adjacent to the outer side of optical modulator segment 810a in dielectric layer 818. Heater portion 812b of the modulation heater structure 812 is formed in recess 910, such that heater portion 812b is laterally adjacent to the outer side of optical modulator segment 810b in dielectric layer 818. A heater portion 812c of a modulation heater structure 812 is formed in a recess 912, such that the heater portion 812c is located inside the optical modulator segments 810a and 810b that are laterally adjacent in the dielectric layer 818.

[0135] like Figure 9F As further shown, a heater layer 914 may be formed on the dielectric layer 824, such that the heater layer 914 is coupled to the heater portions 812a-812c. Deposition tools and / or electroplating tools may be used to deposit the heater portions 812a-812c and the heater layer 914 using CVD, PVD, ALD, electroplating, and / or other suitable deposition techniques. In some embodiments, a planarization tool may be used to planarize the heater layer 914 after deposition.

[0136] like Figure 9GAs shown, a portion of the heater layer 914 can be removed to define the connecting heater portion 812d of the modulation heater structure 812. In some embodiments, a pattern in the hard mask layer is used to remove a portion of the heater layer 914 to define the connecting heater portion 812d of the modulation heater structure 812. In some embodiments, a pattern in the photoresist layer is used to remove a portion of the heater layer 914 to define the connecting heater portion 812d of the modulation heater structure 812. Additionally and / or alternatively, a recess may be formed in the dielectric layer 824, and the connecting heater portion 812d may be formed in the recess, such that the recess defines the connecting heater portion 812d.

[0137] like Figure 9H As shown, a metallization layer 826 can be formed on the dielectric layer 824. Additionally and / or alternatively, a metallization layer 826 can be formed in a recess in the dielectric layer 824. A portion of the metallization layer 826 can be formed on the connecting heater portion 812d of the modulated heater structure 812, such that the connecting heater portion 812d of the modulated heater structure 812 is electrically and / or physically coupled to the metallization layer 826. The metallization layer 826 can... Figure 3G The metallization layer 226 is formed using a similar method.

[0138] As mentioned above, Figures 9A-9H Examples are provided. Other examples are available. Figures 9A-9H The differences are explained.

[0139] Figure 10A and Figure 10B This is a schematic diagram of an example relating to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits. Figure 10A This is a top view of Example 1000 of the photonic integrated circuit 1002. The photonic integrated circuit 1002 is related to... Figure 1 The photonic integrated circuit 102 shown is similar and includes a waveguide structure 1004, an optical modulator structure 1006, and a waveguide structure 1008. The optical modulator structure 1006 includes optical modulator segments 1010a and 1010b.

[0140] like Figure 10A As further shown, Example 1000 further includes a modulation heater structure 1012 adjacent to the optical modulator structure 1006. The modulation heater structure 1012 and... Figure 6A and Figure 6BThe illustrated modulator heater structure 612 is similar and includes heater portions 1012a-1012c. However, each heater portion 1012a-1012c includes a segment 1028 interconnected by one or more connecting segments 1030. Some segments 1028 and connecting segments 1030 result in one or more of the heater portions 1012a-1012c having an approximately S-shaped top view profile. In some embodiments, one or more of the heater portions 1012a-1012c have an approximately U-shaped top view profile. Additionally, the modulator heater structure 1012 includes a connecting heater portion, a connecting heater portion 1012d including connecting heater portions 1012a and 1012c, and a connecting heater portion 1012e including connecting heater portions 1012b and 1012c. Segments 1028 can be used as heating fins to radiate heat to the optical modulator structure 1006. Specifically, section 1028 and associated connecting section 1030 can provide an increased surface area through which heater sections 1012a-1012c can radiate heat to optical modulator sections 1010a and / or 1010b of optical modulator structure 1006.

[0141] Figure 10B Example 1014 is a semiconductor photonic device 1016 that may include a photonic integrated circuit 1002 and its associated modulation heater structure 1012. Figure 10B It is along Figure 10A A cross-sectional view of line EE in the diagram. Specifically, this cross-sectional view spans the optical modulator sections 1010a and 1010b and the heater sections 1012a-1012c in the y-direction. Therefore, Figure 10B This is a cross-sectional view in the yz plane of the semiconductor photonic device 1016.

[0142] like Figure 10B As shown, semiconductor photonic device 1016 is similar to semiconductor photonic device 616 and includes dielectric layers 1018, 1020, 1022 and / or 1024 and a metallization layer 1026. Furthermore, heater portions 1012a-1012c, similar to heater portions 612a-612c, extend along optical modulator segments 1010a and 1010b in dielectric layer 1018 and pass through dielectric layer 1020. However, heater portions 1012a-1012c include segments 1028 arranged in the y-direction, such as... Figure 10B As shown. In addition, the heater-connecting portions 1012d and 1012e are contained within the dielectric layer 1022.

[0143] The segments 1028 of the heater portions 1012a-1012c can extend at least partially into the dielectric layer 1022 such that the top of the segments 1028 is approximately coplanar with the top of the connecting heater portions 1012d and 1012e. The connecting heater portion 1012d couples the segments 1028 of the heater portion 1012a (e.g., directly or through the connecting segment 1030) and the segments 1028 of the heater portion 1012c (e.g., directly or through the connecting segment 1030). Similarly, the connecting heater portion 1012e couples the segments 1028 of the heater portion 1012b (e.g., directly or through the connecting segment 1030) and the segments 1028 of the heater portion 1012c (e.g., directly or through the connecting segment 1030).

[0144] The semiconductor photonic device 1016 (including the photonic integrated circuit and the modulating heater structure 1012) can be formed by a similar set of process operations as for the semiconductor photonic device 616, as described above. However, the recesses 708, 710, and 712 can be patterned to provide for the formation of the segments 1028 of the heater portions 1012a-1012c and the connecting segments 1030 in the dielectric layers 1018 and 1022. However, the heater layer 714 can be patterned to provide for the formation of the connecting heater portions 1012d and 1012e. Figure 7A-7H

[0145] As described above, Figure 10A and Figure 10B provide examples. Other examples can differ from what is described Figure 10A and Figure 10B without departing from the spirit of the disclosure.

[0146] Figure 11A and Figure 11B are schematic diagrams of examples of photonic integrated circuits and semiconductor photonic devices including photonic integrated circuits. Figure 11A is a top view of an example 1100 of a photonic integrated circuit 1102. The photonic integrated circuit 1102 is similar to the photonic integrated circuit 102 shown in Figure 1 and includes a waveguide structure 1104, an optical modulator structure 1106, and a waveguide structure 1108. The optical modulator structure 1106 includes optical modulator segments 1110a and 1110b.

[0147] As further shown in Figure 11A the example 1100 further includes a modulating heater structure 1112 proximate the optical modulator structure 1106. The modulating heater structure 1112 is similar to Figure 8A and Figure 8B ​The illustrated modulator heater structure 812 is similar and includes heater portions 1112a-1112c. However, each heater portion 1112a-1112c includes segments 1128 interconnected by one or more connecting segments 1130. Some segments 1128 and connecting segments 1130 result in one or more of the heater portions 1112a-1112c having an approximately S-shaped top view profile. In some embodiments, one or more of the heater portions 1112a-1112c have an approximately U-shaped top view profile. Additionally, the modulator heater structure 1112 includes connecting heater portions, including connecting heater portion 1112d connecting heater portions 1112a and 1112c, and connecting heater portion 1112e connecting heater portions 1112b and 1112c. Segments 1128 can be used as heating fins radiating heat to the optical modulator structure 1106. Specifically, section 1128 and associated connecting section 1130 can provide an increased surface area through which heater sections 1112a-1112c can radiate heat to optical modulator sections 1110a and / or 1110b of optical modulator structure 1106.

[0148] Figure 11B Example 1114 is a semiconductor photonic device 1116 that may include a photonic integrated circuit 1102 and its associated modulation heater structure 1112. Figure 11B It is along Figure 11A A cross-sectional view of line FF in the image. Specifically, this cross-sectional view spans the optical modulator sections 1110a and 1110b and the heater sections 1112a-1112c in the y-direction. Therefore, Figure 11B This is a cross-sectional view in the yz plane of the semiconductor photonic device 1116.

[0149] like Figure 11B As shown, semiconductor photonic device 1116 is similar to semiconductor photonic device 816 and includes dielectric layers 1118, 1120, 1122 and / or 1124 and a metallization layer 1126. Furthermore, heater portions 1112a-1112c, similar to heater portions 812a-812c, extend along optical modulator segments 1110a and 1110b in dielectric layer 1118 and pass through dielectric layers 1120, 1122 and 1124 to the metallization layer 1126. However, heater portions 1112a-1112c include segments 1128 arranged in the y-direction, such as... Figure 11B As shown.

[0150] The segments 1128 of the heater portions 1112a-1112c can extend through the dielectric layer 1124 such that the top of the segments 1128 are coupled to the metallization layer 1126 and the top of the segments 1128 are approximately coplanar with the top of the connecting heater portions 1112d and 1112e. The connecting heater portions 1112d and 1112e are contained in the dielectric layer 1124 and are coupled to the metallization layer 1126. The connecting heater portion 1112d is coupled to the segments 1128 of the heater portion 1112a (e.g., directly or through the connecting segments 1130) and is coupled to the segments 1128 of the heater portion 1112c (e.g., directly or through the connecting segments 1130). Similarly, the connecting heater portion 1112e is coupled to the segments 1128 of the heater portion 1112b (e.g., directly or through the connecting segments 1130) and is coupled to the segments 1128 of the heater portion 1112c (e.g., directly or through the connecting segments 1130).

[0151] The semiconductor photonic device 1116 (including the photonic integrated circuit and the modulated heater structure 1112) can be formed by a similar set of process operations as for the semiconductor photonic device 816, as described above. However, the recesses 908, 910, and 912 can be patterned to provide for the formation of the segments 1128 of the heater portions 1112a-1112c and the connecting segments 1130 in the dielectric layers 1118 and 1122. However, the heater layer 914 can be patterned to provide for the formation of the connecting heater segments 1112d and 1112e. Figures 9A-9H

[0152] As described above, Figure 11A and Figure 11B provide examples. Other examples can differ from what is described Figure 11A and Figure 11B as described.

[0153] Figures 12A-12C is a schematic diagram of examples related to photonic integrated circuits and semiconductor photonic devices including photonic integrated circuits. Figure 12A is a top view of an example 1200 of a photonic integrated circuit 1202. The photonic integrated circuit 1202 is similar to the photonic integrated circuit 102 shown in Figure 1 and includes a waveguide structure 1204, an optical modulator structure 1206, and a waveguide structure 1208. The optical modulator structure 1206 includes optical modulator segments 1210a and 1210b.

[0154] As described above, Figure 12A ​Further shown, example 1200 further includes a modulation heater structure 1212 proximate to optical modulator structure 1206, similar to example 200 of modulation heater structure 212. However, modulation heater structure 1212 differs from modulation heater structure 212 in that heater portions 1212a and 1212b of modulation heater structure 1212 are positioned above optical modulator segments 1210a and 1210b, rather than laterally adjacent to optical modulator segments 1210a and 1210b. For example, heater portion 1212a can be positioned above optical modulator segment 1210a, and heater portion 1212b can be positioned above optical modulator segment 1210b.

[0155] As Figure 12A Further shown, each of heater portions 1212a and 1212b includes segments 1228 and one or more connecting segments 1230 that couple segments 1228 together. Connecting segments 1230 of heater portion 1212a can be positioned at opposite ends of alternating segments 1228, such that segments 1228 and connecting segments 1230 form a repeating pattern in a top view of modulation heater structure 1212, where the repeating pattern approximately corresponds to a rectangular waveform shape. In example 1200, segments 1228 are aligned in a direction (e.g., the y-direction) that is approximately perpendicular to optical modulator segments 1210a and 1210b, and extend in a direction (e.g., the x-direction) that is approximately parallel to optical modulator segments 1210a and 1210b. Heater portion 1212b can have a similar alignment of segments 1228 and connecting segments 1230.

[0156] Segments 1228 can function as heating fins that radiate heat to optical modulator structure 1206. In particular, segments 1228 and associated connecting segments 1230 can provide increased surface area (e.g., relative to a solid rectangular heater portion) through which heater portions 1212a and 1212b can radiate heat to optical modulator segments 1210a and / or 1210b of optical modulator structure 1206.

[0157] Figure 12B is an example 1214 of a semiconductor photonic device 1216 that can include photonic integrated circuit 1202 and its associated modulation heater structure 1212. Figure 12B is a cross-sectional view along line G-G in Figure 12A Particularly, this cross-sectional view is across optical modulator segments 1210a and 1210b and heater portions 1212a and 1212b in the y-direction. Thus, Figure 12B is a cross-sectional view in the y-z plane in semiconductor photonic device 1216.

[0158] As Figure 12BAs shown, the semiconductor photonic device 1216 is similar to the semiconductor photonic device 216 and includes dielectric layers 1218, 1220, 1222, and / or 1224 and a metallization layer 1226. Also, the optical modulator sections 1210a and 1210b are arranged in the semiconductor photonic device 1216 in a similar manner as the optical modulator sections 210a and 210b in the semiconductor photonic device 216. The heater portions 1212a and 1212b differ from the heater portions 212a-212c in the semiconductor photonic device 216 in that the heater portions 1212a and 1212b are located above the optical modulator sections 1210a and 1210b and are contained in the dielectric layer 1222.

[0159] As Figure 12B Further shown, the sections 1228 of the heater portion 1212a (and the sections 1228 of the heater portion 1212b) are defined by dielectric spacers 1232 formed from the dielectric layer 1222. In addition, the heater portion 1212a and the heater portion 1212b each have a contoured (or non-flat) top surface 1234 (e.g., the top surface 1234 has a contoured cross-sectional profile) due to the omission of a planarization operation for the heater portion 1212a and the heater portion 1212b.

[0160] Figure 12C is an example 1236 of the heater portion 1212a or 1212b. As Figure 12C shown, the sections 1228 of the heater portion 1212a (or the heater portion 1212b) can include elongated structures that extend approximately parallel to each other. The connecting sections 1230 of the heater portion 1212a (or the heater portion 1212b) can couple the ends of adjacent sections 1228 together and can be arranged in an alternating manner. For example, a first connecting section 1230 can connect a first end of a first section 1228 and a first end of an adjacent second section 1228, a second connecting section 1230 can connect a second end (opposite the first end) of the second section 1228 and a second end of an adjacent third section 1228, a third connecting section 1230 can connect a first end (opposite the second end) of the third section 1228 and a first end of an adjacent fourth section 1228, and so on.

[0161] As mentioned above, Figures 12A-12C Examples are provided. Other examples can differ Figures 12A-12C from the examples described.

[0162] Figures 13A-13HThis is a schematic diagram of an example 1300 illustrating the formation of a semiconductor photonic device 1216. Specifically, example 1300 includes the formation of a photonic integrated circuit 1202 and its associated modulation heater structure 1212 within the semiconductor photonic device 1216. In some embodiments, in Figures 13A-13H The one or more semiconductor process operations described herein are performed using one or more semiconductor process tools, such as deposition tools, exposure tools, development tools, etching tools, electroplating tools, planarization tools, ion implantation tools, wafer / wafer transfer tools and / or other types of semiconductor process tools.

[0163] Back Figure 13A A substrate 1302 may be provided. The substrate 1302 may include an SOI substrate, which includes a semiconductor substrate 1304, a portion of a dielectric layer 1218 on and / or above the semiconductor substrate 1304, and a semiconductor layer 1306 on and / or above the portion of the dielectric layer 1218. Alternatively, the semiconductor substrate 1304 may be provided as a semiconductor wafer, and a portion of the dielectric layer 1218 may be formed on and / or above the semiconductor substrate 1304 using a deposition tool, and the semiconductor layer 1306 may be formed on and / or above the portion of the dielectric layer 1218.

[0164] like Figure 13B and Figure 13C As shown, an optical modulator structure 1206 (including optical modulator segments 1210a and 1210b) can be formed in the semiconductor layer 1306, such that the optical modulator structure 1206 is located on a portion of the dielectric layer 1218. Waveguide structures 1204 and 1208 (not shown in a cross-sectional view along line GG) can also be formed in the semiconductor layer 1306 on the portion of the dielectric layer 1218 along the optical modulator structure 1206. Additional material of the dielectric layer 1218 can be deposited around the optical modulator structure 1206 (and waveguide structures 1204 and 1208). Figure 3B and Figure 3C The similar process operations and / or techniques described above can be used as additional materials to form the optical modulator structure 1206 and the dielectric layer 1218.

[0165] like Figure 13D As shown, with Figure 3FA similar method may be used to form a dielectric layer 1220 on and / or above the dielectric layer 1218, and a dielectric layer 1222 on and / or above the dielectric layer 1220. However, prior to the formation of the heater portions 1212a and 1212b of the modulator heater structure 1212, a dielectric layer 1220 is formed on and / or above the optical modulator segments 1210a and 1210b of the optical modulator structure 1206. This is because the dielectric layer 1222 is used to define the shape and / or contour of the heater portions 1212a and 1212b of the modulator heater structure 1212.

[0166] like Figure 13E and Figure 13F As shown, heater portions 1212a and 1212b of a modulated heater structure 1212 are formed in the dielectric layer 1222. Figure 13E As shown, a recess 1310 is formed over the optical modulator section 1210a through the dielectric layer 1222, and a recess 1308 is formed over the optical modulator section 1210b through the dielectric layer 1222. The formation of recesses 1310 and 1308 results in the formation of dielectric spacers 1232 on the dielectric layer 1220.

[0167] In some embodiments, the pattern in the photoresist layer is used to etch the dielectric layer 1222 to form recesses 1310 and 1308. In these embodiments, the photoresist layer can be formed on the dielectric layer 1222 using a deposition tool. The photoresist layer can be patterned by exposing it to a radiation source using an exposure tool. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric layer 1222 based on the pattern to form recesses 1310 and 1308. In some embodiments, the etching operation includes plasma etching, wet chemical etching, and / or other types of etching operations. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using a chemical stripper, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used based on the pattern as an alternative technique for forming recesses 1310 and 1308.

[0168] like Figure 13F As shown, a modulated heater structure 1212 is formed in recesses 1310 and 1308, such that heater portions 1212a and 1212b of the modulated heater structure 1212 are contained in segments 1228 separated by dielectric spacers 1232 in recesses 1310 and 1308. Deposition tools and / or electroplating tools can be used to deposit heater portions 1212a and 1212b using CVD, PVD, ALD, electroplating, and / or other suitable deposition techniques. As described above, omitting planarization of heater portions 1212a and 1212b results in heater portions 1212a and 1212b having a wavy top surface 1234.

[0169] like Figure 13G As shown, a dielectric layer 1224 is formed on and / or above the dielectric layer 1222, such that the dielectric layer 1224 covers the heater portions 1212a and 1212b. The dielectric layer 1224 can be combined with... Figure 3F The dielectric layer 224 described herein is formed using a method similar to that used in the previous section.

[0170] like Figure 13H As shown, a metallization layer 1226 is formed on the dielectric layer 1224. Additionally and / or alternatively, the metallization layer 1226 is formed in a recess in the dielectric layer 1224. The metallization layer 1226 can be combined with... Figure 3G The metallization layer 226 described herein is formed using a method similar to that used in the previous section.

[0171] As mentioned above, Figures 13A-13H Examples are provided. Other examples are available. Figures 13A-13H The differences are explained.

[0172] Figure 14A and Figure 14B This is a schematic diagram of an example relating to photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits. Figure 14A This is a top view of Example 1400 of the photonic integrated circuit 1402. The photonic integrated circuit 1402 is related to... Figure 1 The photonic integrated circuit 102 shown is similar and includes a waveguide structure 1404, an optical modulator structure 1406, and a waveguide structure 1408. The optical modulator structure 1406 includes optical modulator segments 1410a and 1410b.

[0173] like Figure 14AFurther shown, example 1400 further includes a modulation heater structure 1412 proximate to optical modulator structure 1406, similar to example 1200 with modulation heater structure 1212. Also, modulation heater structure 1412 and modulation heater structure 1212 are structurally similar and include heater portions 1412a and 1412b on optical modulator sections 1410a and 1410b, and each heater portion 1412a and 1412b includes sections 1428 and one or more connecting sections 1430 coupling sections 1428 together. Connecting sections 1430 of heater portion 1412a (and heater portion 1412b) can be located at opposite ends of alternating sections 1428, such that sections 1428 and connecting sections 1430 form a repeating pattern in a top view of modulation heater structure 1412, where the repeating pattern approximately corresponds to a rectangular wave shape. In example 1400, sections 1428 are aligned in a direction (e.g., y direction) that is approximately perpendicular to optical modulator sections 1410a and 1410b, and extend in a direction (e.g., x direction) that is approximately parallel to optical modulator sections 1410a and 1410b.

[0174] Figure 14B is an example 1414 of a semiconductor photonic device 1416 that can include photonic integrated circuit 1402 and its associated modulation heater structure 1412. Figure 14B is a cross-sectional view along line H-H in Figure 14A . In particular, this cross-sectional view is across optical modulator sections 1410a and 1410b and heater portions 1412a and 1412b in the y direction. Thus, Figure 14B is a cross-sectional view in the y-z plane in semiconductor photonic device 1416.

[0175] As shown in Figure 14B , semiconductor photonic device 1416 is similar to semiconductor photonic device 1216 and includes dielectric layers 1418, 1420, 1422, and / or 1424 and metallization layer 1426. Also, optical modulator sections 1410a and 1410b are aligned in semiconductor photonic device 1416 similar to optical modulator sections 1210a and 1210b in semiconductor photonic device 1216, and heater portions 1412a and 1412b are located on optical modulator sections 1410a and 1410b, respectively, similar to heater portions 1212a and 1212b. Sections 1428 of heater portions 1412a and 1412b define dielectric spacers 1432.

[0176] Heater portions 1412a and 1412b differ from heater portions 1212a and 1212b in that heater portions 1412a and 1412b (and their associated dielectric spacers 1432) are located in an oxide pattern layer 1436 on dielectric layer 1422, rather than in dielectric layer 1422. This enables dielectric layer 1422 to act as an etch stop when defining dielectric spacers 1432.

[0177] Semiconductor photonic device 1416 can be formed by a similar set of semiconductor process operations as semiconductor photonic device 1216, as described above. Figures 13A-13H An oxide pattern layer 1436 can be formed on and / or over dielectric layer 1422 (e.g., using a deposition tool) rather than forming dielectric spacers 1432 in dielectric layer 1422, and dielectric spacers 1432 can be formed in oxide pattern layer 1436. Then, heater portions 1412a and 1412b can be formed on and / or over dielectric spacers 1432 in oxide pattern layer 1436, such that segments 1428 and associated connection segments 1430 are defined by dielectric spacers 1432. Similar to heater portions 1212a and 1212b, planarization of heater portions 1412a and 1412b can be omitted, resulting in contoured top surfaces 1434 of heater portions 1412a and 1412b.

[0178] As described above, Figure 14A and Figure 14B examples are provided. Other examples can differ from what is described Figure 14A and Figure 14B described.

[0179] Figures 15A-15C is a schematic diagram of examples related to photonic integrated circuits and semiconductor photonic devices that include photonic integrated circuits. Figure 15A is a top view of an example 1500 of a photonic integrated circuit 1502. Photonic integrated circuit 1502 is similar to photonic integrated circuit 102 shown in Figure 1 and includes waveguide structure 1504, optical modulator structure 1506, and waveguide structure 1508. Optical modulator structure 1506 includes optical modulator segments 1510a and 1510b.

[0180] As described above, Figure 15AFurther shown, example 1500 further includes a modulation heater structure 1512 proximate to the optical modulator structure 1506, similar to example 1200 of the modulation heater structure 1212. Also, the modulation heater structure 1512 is similar to the modulation heater structure 1212 and includes heater portions 1512a and 1512b, which are located on the optical modulator segments 1510a and 1510b, respectively, and each of the heater portions 1512a and 1512b includes segments 1528 and one or more connecting segments 1530 that couple the segments 1528 together. The connecting segments 1530 of the heater portion 1512a (and the heater portion 1512b) can be located on opposite ends of the alternating segments 1528, such that the segments 1528 and the connecting segments 1530 form a repeating pattern in a top view of the modulation heater structure 1512, where the repeating pattern approximately corresponds to a rectangular wave shape.

[0181] The heater portions 1512a and 1512b and the heater portions 1212a and 1212b differ in that the segments 1528 of each of the heater portions 1512a and 1512b are aligned in a direction (e.g., the x-direction) that is approximately parallel to the optical modulator segments 1510a and 1510b and extend in a direction (e.g., the y-direction) that is approximately perpendicular to the optical modulator segments 1510a and 1510b. The orientation and / or alignment of the segments 1528 and the connecting segments 1530 can enable efficient manufacturing integration for forming the optical modulator segments 1510a and 1510b and other conductive structures in the dielectric layer 1524 proximate to the photonic integrated circuit 1502 in conjunction. For example, the alignment of the segments 1528 in the x-direction and the extension of the segments 1528 in the y-direction enables better integration of the formation of the optical modulator segments 1510a and 1510b into reticles and other process-related equipment and design rules with other conductive structures in the dielectric layer 1524 proximate to the photonic integrated circuit 1502 and also aligned in the x-direction and extending in the y-direction. Similarly, the alignment of the segments 1228 (or the segments 1428) in the y-direction and the extension of the segments 1228 (or the segments 1428) in the x-direction enables better integration of the formation of the optical modulator segments 1210a and 1210b (or the optical modulator segments 1410a and 1410b) into reticles and other process-related equipment and design rules with other conductive structures in the dielectric layer 1224 (or the dielectric layer 1424) proximate to the photonic integrated circuit 1202 (or the photonic integrated circuit 1402) and also aligned in the y-direction and extending in the x-direction.

[0182] Figure 15B is an example 1514 of a semiconductor photonic device 1516 that can include the photonic integrated circuit 1502 and its associated modulation heater structure 1512.Figure 15B is a cross-sectional view along line I-I in Figure 15A . In particular, this cross-sectional view is across the optical modulator segments 1510a and 1510b and the heater portions 1512a and 1512b in the y-direction. Thus, Figure 15B is a cross-sectional view in the y-z plane in the semiconductor photonic device 1516.

[0183] As shown in Figure 15B , the semiconductor photonic device 1516 is similar to the semiconductor photonic device 1216 and includes dielectric layers 1518, 1520, 1522, and / or 1524 and a metallization layer 1526. Also, the arrangement of the optical modulator segments 1510a and 1510b in the semiconductor photonic device 1516 is similar to the arrangement of the optical modulator segments 1210a and 1210b in the semiconductor photonic device 1216, and the heater portions 1512a and 1512b are located on the optical modulator segments 1510a and 1510b, respectively, similar to the heater portions 1212a and 1212b.

[0184] The heater portions 1512a and 1512b differ from the heater portions 1212a and 1212b in that the segments 1528 are oriented approximately 90 degrees relative to the segments 1228. Thus, the cross-sectional view along line I-I shows an example of a connecting segment coupling the segments 1528 at opposite ends of each of the heater portions 1512a and 1512b. The heater portions 1512a and 1512b can extend through the dielectric layer 1522 and into the dielectric layer 1524. The segments 1528 and the connecting segment 1530 of the heater portions 1512a and 1512b can be defined by a dielectric spacer 1532 (not shown in the cross-sectional view along line I-I) formed from the dielectric layer 1522. Alternatively, the heater portions 1512a and 1512b and the associated dielectric spacer 1532 can be located in an oxide pattern layer on the dielectric layer 1522, similar to the heater portions 1412a and 1412b in the semiconductor photonic device 1416. The heater portions 1512a and 1512b can have a contoured top surface 1534, similar to the heater portions 1212a and 1212b and / or the heater portions 1412a and 1412b.

[0185] Figure 15C is an example 1536 of a heater portion 1512a or 1512b. As Figure 15CAs shown, the segments 1528 of the heater portion 1512a (or the heater portion 1512b) can include elongated structures that extend approximately parallel to each other. The connecting segments 1530 of the heater portion 1512a (or the heater portion 1512b) can couple together the end portions of adjacent segments 1528, and can be arranged in an alternating fashion. For example, a first connecting segment 1530 can connect a first end portion of a first segment 1528 and a first end portion of an adjacent second segment 1528, a second connecting segment 1530 can connect a second end portion (opposite the first end portion) of the second segment 1528 and a second end portion of an adjacent third segment 1528, a third connecting segment 1530 can connect a first end portion (opposite the second end portion) of the third segment 1528 and a first end portion of an adjacent fourth segment 1528, and so on.

[0186] As described above, Figures 15A-15C Examples are provided. Other examples can be similarly Figures 15A-15C described differently.

[0187] Figure 16A and Figure 16B is a diagram of examples of a photonic integrated circuit and a semiconductor photonic device including the photonic integrated circuit. Figure 16A is a top view of an example 1600 of a photonic integrated circuit 1602. The photonic integrated circuit 1602 is similar to the photonic integrated circuit 102 shown in Figure 1 and includes a waveguide structure 1604, an optical modulator structure 1606, and a waveguide structure 1608. The optical modulator structure 1606 includes optical modulator segments 1610a and 1610b.

[0188] As Figure 16A Further shown, the example 1600 further includes a modulation heater structure 1612 proximate to the optical modulator structure 1606, similar to the example 1200 of the modulation heater structure 1212. Also, the modulation heater structure 1612 includes heater portions 1612a and 1612b, which are located on the optical modulator segments 1610a and 1610b, respectively, similar to the heater portions 1212a and 1212b. In some embodiments, the heater portions 1612a and 1612b have a top view shape or profile that is approximately rectangular and extend along the x-direction on the optical modulator segments 1610a and 1610b, respectively. In some embodiments, the heater portions 1612a and / or 1612b have a top view shape or profile that is similar to the heater portions 1212a and / or 1212b of the modulation heater structure 1212. In some embodiments, the heater portions 1612a and / or 1612b have a top view shape or profile that is similar to the heater portions 1512a and / or 1512b of the modulation heater structure 1512.

[0189] The heater portions 1612a and 1612b can each include one or more materials other than tungsten (W) or copper (Cu). For example, the heater portions 1612a and 1612b can each include one or more materials having a greater thermal conductivity than tungsten (W) or copper (Cu). This enables the heater portions 1612a and 1612b to be placed further away from the optical modulator structure 1606 while still providing sufficient heat and achieving sufficient thermal efficiency to stabilize the resonant wavelength of the optical modulator structure 1606. Examples of such materials include carbon-based materials, such as graphene or diamond. Additionally and / or alternatively, the heater portions 1612a and 1612b can each include silicon (Si) doped with one or more dopant types (e.g., p-type dopants such as boron (B), aluminum (Al), and / or gallium (Ga), etc.; n-type dopants such as phosphorus (P), arsenic (As), and / or antimony (Sb), etc.), metal silicides (e.g., tungsten silicide (WSi), titanium silicide (TiSi)), and / or barrier metals such as tantalum nitride (TaN) and / or titanium nitride (TiN), etc.

[0190] Figure 16B is an example 1614 of a semiconductor photonic device 1616 that can include the photonic integrated circuit 1602 and its associated modulating heater structure 1612. Figure 16B is a cross-sectional view along line J-J in Figure 16A . In particular, this cross-sectional view is across the optical modulator segments 1610a and 1610b and the heater portions 1612a and 1612b in the y-direction. Thus, Figure 16B is a cross-sectional view in the y-z plane in the semiconductor photonic device 1616.

[0191] As shown in Figure 16B , the semiconductor photonic device 1616 is similar to the semiconductor photonic device 1216 and includes dielectric layers 1618, 1620, 1622, and / or 1624 and a metallization layer 1626. Also, the arrangement of the optical modulator segments 1610a and 1610b in the semiconductor photonic device 1616 is similar to the arrangement of the optical modulator segments 1210a and 1210b in the semiconductor photonic device 1216, and the heater portions 1612a and 1612b are located on the optical modulator segments 1610a and 1610b, respectively, similar to the heater portions 1212a and 1212b.

[0192] Heater portions 1612a and 1612b differ from heater portions 1212a and 1212b in that heater portions 1612a and 1612b are located in dielectric layer 1624 on dielectric layer 1622, rather than being located in dielectric layer 1622. This allows heater portions 1612a and 1612b to be formed as part of the contact formation process, similar to Figures 5A-5G and Figures 9A-9H the processes described above.

[0193] As described above, Figure 16A and Figure 16B examples are provided. Other examples can differ from what is described. Figure 16A and Figure 16B described.

[0194] Figure 17A and Figure 17B are schematic diagrams of examples of photonic integrated circuits and semiconductor photonic devices containing photonic integrated circuits. Figure 17A is a top view of example 1700 of a photonic integrated circuit 1702. Photonic integrated circuit 1702 is similar to photonic integrated circuit 102 shown in Figure 1 and includes waveguide structure 1704, optical modulator structure 1706, and waveguide structure 1708. Optical modulator structure 1706 includes optical modulator sections 1710a and 1710b.

[0195] As further shown in Figure 17A example 1700 further includes modulation heater structure 1712 proximate to optical modulator structure 1706, similar to example 1600 of modulation heater structure 1612. Also, modulation heater structure 1712 includes heater portions 1712a and 1712b, which are located on optical modulator sections 1710a and 1710b, respectively, similar to heater portions 1612a and 1612b. In some embodiments, heater portions 1712a and 1712b have a top view shape or profile that is approximately rectangular and extend along the x-direction on optical modulator sections 1710a and 1710b, respectively.

[0196] Heater portions 1712a and 1712b differ from heater portions 1612a and 1612b in that each of heater portions 1712a and 1712b includes heater sections 1728 and heater sections 1730, which are arranged in an alternating fashion. For example, heater sections 1728 and 1730 of heater portion 1712a and / or heater sections 1728 and 1730 of heater portion 1712b can extend in the x-direction and be arranged in an alternating fashion in the y-direction, as shown in Figure 17AAlternatively, the heater segments 1728 and 1730 of the heater portion 1712a and / or the heater segments 1728 and 1730 of the heater portion 1712b can extend in the y-direction and be arranged in an alternating fashion in the x-direction.

[0197] The heater segments 1728 and 1730 can each include a doped semiconductor material. For example, the heater segments 1728 can each include silicon (Si) doped with one or more n-type dopants such as phosphorus (P), arsenic (As), and / or antimony (Sb), among others; and the heater segments 1730 can each include silicon (Si) doped with one or more p-type dopants such as boron (B), aluminum (Al), and / or gallium (Ga), among others. As other examples, the heater segments 1728 can each include an n-type thermoelectric material such as n-type bismuth telluride (Bi2Te3); and the heater segments 1730 can each include a p-type thermoelectric material such as p-type bismuth telluride (Bi2Te3). Thus, the heater segments 1728 can be considered n-type semiconductor segments, while the heater segments 1730 can be considered p-type semiconductor segments.

[0198] Figure 17B is an example 1714 of a semiconductor photonic device 1716 that can include the photonic integrated circuit 1702 and its associated modulated heater structure 1712. Figure 17B is a cross-sectional view along the line K-K in Figure 17A . In particular, this cross-sectional view is across the optical modulator segments 1710a and 1710b and the heater portions 1712a and 1712b in the y-direction. Thus, Figure 17B is a cross-sectional view in the y-z plane in the semiconductor photonic device 1716.

[0199] As shown in Figure 17B , the semiconductor photonic device 1716 is similar to the semiconductor photonic device 1616 and includes dielectric layers 1718, 1720, 1722, and / or 1724 and a metallization layer 1726. Also, the arrangement of the optical modulator segments 1710a and 1710b in the semiconductor photonic device 1716 is similar to the arrangement of the optical modulator segments 1610a and 1610b in the semiconductor photonic device 1616, and the heater portions 1712a and 1712b are located over the optical modulator segments 1710a and 1710b, respectively, similar to the heater portions 1612a and 1612b.

[0200] The heater segments 1728 and 1730 of the heater portion 1712a (and the heater segments 1728 and 1730 of the heater portion 1712b) can form a thermoelectric cooler that can be used to provide cooling around the modulating heater structure 1712 in the semiconductor photonic device 1716 based on the thermoelectric effect, such as the Peltier effect. This enables heat to be radiated from the heater segments 1728 of the modulating heater structure 1712 to the optical modulator structure 1706, while enabling excess heat radiated from the optical modulator structure 1706 to be absorbed by the heater segments 1730 of the modulating heater structure 1712. This reduces warpage, cracking, and / or other types of damage to the dielectric layer 1724 and other dielectric layers in the semiconductor photonic device 1716. An electrical input can be applied to the heater segments 1728 to generate heat. Thus, the heater segments 1728 can be referred to as the hot plate or hot side of the thermoelectric cooler, while the heater segments 1730 can be referred to as the cold plate or cold side of the thermoelectric cooler. In some embodiments, the electrical input can be applied to the heater segments 1728 through the top of the semiconductor photonic device 1716 (e.g., through the metallization layer 1726). In some embodiments, the electrical input can be applied to the heater segments 1728 through the bottom of the semiconductor photonic device 1716.

[0201] As described above, Figure 17A and Figure 17B examples are provided. Other examples can differ Figure 17A and Figure 17B as described.

[0202] Figure 18 is a flowchart of an example process 1800 related to forming a semiconductor photonic device as described herein. In some embodiments, Figure 18 one or more process blocks of the process 1800 are performed using one or more semiconductor processing tools, such as a deposition tool, an exposure tool, a development tool, an etching tool, a plating tool, a planarization tool, an ion implantation tool, a wafer / wafer transfer tool, and / or other types of semiconductor processing tools.

[0203] As Figure 18As shown, process 1800 can include forming an optical modulator structure in a semiconductor layer on a dielectric layer of a semiconductor photonic device (block 1810). For example, one or more semiconductor process tools can be used to form an optical modulator structure (e.g., optical modulator structure 106, 206, 406, 606, 806, 1006, and / or 1106) in a semiconductor layer on a dielectric layer (e.g., dielectric layer 218, 418, 618, 818, 1018, and / or 1118) of a semiconductor photonic device (e.g., semiconductor photonic device 216, 416, 616, 816, 1016, and / or 1116), as described herein.

[0204] As Figure 18 Further shown, process 1800 can include depositing additional dielectric material of the dielectric layer such that the dielectric layer surrounds the optical modulator structure (block 1820). For example, one or more semiconductor process tools can be used to deposit additional dielectric material of the dielectric layer such that the dielectric layer surrounds the optical modulator structure, as described herein.

[0205] As Figure 18 Further shown, process 1800 can include forming a recess in the first dielectric layer such that the recess is located at one or more sides of an adjacent optical modulator structure (block 1830). For example, one or more semiconductor process tools can be used to form a recess (e.g., recess 308-312, 508-512, 708-712, 908-912) in the first dielectric layer such that the recess is located at one or more sides of an adjacent optical modulator structure, as described herein.

[0206] As Figure 18 Further shown, process 1800 can include forming a modulation heater portion of a modulation heater structure in the recess (block 1840). For example, one or more semiconductor process tools can be used to form a modulation heater portion (e.g., modulation heater portion 212a-212c, 412a-412c, 612a-612c, 812a-812c, 1012a-1012c, and / or 1112a-1112c) of a modulation heater structure (e.g., modulation heater structure 212, 412, 612, 812, 1012, and / or 1112) in the recess, as described herein.

[0207] Process 1800 can include other embodiments, such as any single embodiment or any combination of embodiments of one or more other processes described below and / or elsewhere herein.

[0208] In a first embodiment, the process 1800 includes forming one or more additional dielectric layers (e.g., dielectric layers 220-224, 420-424, 620-624, 820-824, 1020-1024, and / or 1120-1124) on the optical modulator structure and the modulating heater portion after forming the modulating heater portion.

[0209] In a second embodiment, alone or in combination with the first embodiment, the process 1800 includes forming one or more additional dielectric layers (e.g., dielectric layers 220-224, 420-424, 620-624, 820-824, 1020-1024, and / or 1120-1124) on the optical modulator structure before forming the modulating heater portion, where forming the recess includes forming the recess through the one or more additional dielectric layers, and forming the modulating heater portion includes forming the modulating heater portion in the recess such that the modulating heater portion extends through the one or more additional dielectric layers and into the dielectric layer.

[0210] In a third embodiment, alone or in combination with one or more of the first and second embodiments, the process 1800 includes forming one or more connecting heater portions (e.g., connecting heater portions 612d, 812d, 1012d, 1012e, 1112d, and / or 1112e) that extend between and connect the modulating heater portions.

[0211] Although Figure 18 Example tiles of the process 1800 are shown, but in some embodiments, the process 1800 includes additional tiles, fewer tiles, different tiles, or a different arrangement of tiles than those described in Figure 18 Additionally or alternatively, two or more of the tiles of the process 1800 can be performed in parallel.

[0212] As such, the semiconductor photonic device includes an optical modulator structure and a modulating heater structure. The location of the modulating heater structure, the shape of the modulating heater structure, and / or the material of the modulating heater structure are selected to increase the heating efficiency of the modulating heater structure.

[0213] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a first dielectric layer. The semiconductor photonic device includes a plurality of second dielectric layers on the first dielectric layer. The semiconductor photonic device includes a semiconductor photonic circuit in the first dielectric layer. The semiconductor photonic circuit includes one or more waveguide structures and an optical modulator structure coupled with the one or more waveguide structures. The semiconductor photonic device includes a modulation heater structure at least partially in the first dielectric layer, wherein the modulation heater structure includes one or more heater portions laterally adjacent to the optical modulator structure in the first dielectric layer. In some embodiments, a top surface of the one or more heater portions and a top surface of the optical modulator structure are approximately coplanar. In some embodiments, the one or more heater portions extend into at least a subset of the second dielectric layers. In some embodiments, the one or more heater portions include a first heater portion and a second heater portion. The first heater portion is adjacent to an outer side of a first section of the modulation heater structure, and the second heater portion is adjacent to an outer side of a second section of the modulation heater structure. In some embodiments, the one or more heater portions include a third heater portion between the first section and the second section. In some embodiments, the one or more heater portions include a third heater portion extending between the first heater portion and the second heater portion, wherein the third heater portion is on at least one of the first section or the second section of the modulation heater structure. In some embodiments, the first heater portion includes heating fins connected by one or more connecting sections, wherein in a top view of the first heater portion, the heating fins and the one or more connecting sections are arranged in approximately an S-shape. In some embodiments, a bottom surface of the one or more heater portions is at a lower vertical position in the first dielectric layer compared to a bottom surface of the optical modulator structure.

[0214] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a first dielectric layer. The semiconductor photonic device includes a plurality of second dielectric layers on the first dielectric layer. The semiconductor photonic device includes a semiconductor photonic circuit in the first dielectric layer. The semiconductor photonic circuit includes one or more waveguide structures and an optical modulator structure coupled with the one or more waveguide structures. The semiconductor photonic device includes a modulation heater structure in one or more of the second dielectric layers, wherein the modulation heater structure includes heater portions, wherein the optical modulator structure includes optical modulator segments, the heater portions are respectively on the optical modulator segments of the optical modulator structure, wherein one of the heater portions includes a heater segment, the heater segment is arranged along a first direction and extends along a second direction, the second direction is approximately perpendicular to the first direction. In some embodiments, the individual optical modulator segments extend towards the second direction. In some embodiments, the individual optical modulator segments extend towards the first direction. In some embodiments, adjacent heater segments are connected by a connecting segment of the heater portion. In some embodiments, in a top view of the heater portion, the heater segments and the connecting segment are arranged in a rectangular wave shape. In some embodiments, a top surface of the heater portion has a wavy cross-sectional profile. In some embodiments, the heater segment includes a plurality of n-type semiconductor segments and a plurality of p-type semiconductor segments, wherein the n-type semiconductor segments and the p-type semiconductor segments are arranged in an alternating manner along the first direction. In some embodiments, the heater segment includes at least one of the following: doped silicon, tungsten, silicide, or graphene.

[0215] As described in more detail above, some embodiments described herein provide a method of forming a semiconductor photonic device. The method includes forming optical modulator structures in a semiconductor layer on a dielectric layer of the semiconductor photonic device. The method includes depositing additional dielectric material of the dielectric layer such that the dielectric layer surrounds the optical modulator structures. The method includes forming recesses in the dielectric layer such that the recesses are located on one or more sides of adjacent optical modulator structures. The method includes forming modulating heater portions of a modulating heater structure in the recesses. In some embodiments, the method of forming a semiconductor photonic device further comprises forming one or more additional dielectric layers on the optical modulator structures and the modulating heater portions after forming the modulating heater portions. In some embodiments, the method of forming a semiconductor photonic device further comprises forming one or more additional dielectric layers on the optical modulator structures before forming the modulating heater portions. Forming the recesses includes forming the recesses through the one or more additional dielectric layers. Forming the modulating heater portions includes forming the modulating heater portions in the recesses such that the modulating heater portions extend through the one or more additional dielectric layers and into the dielectric layer. In some embodiments, the method of forming a semiconductor photonic device further comprises forming one or more connecting heater portions that extend between and connect the modulating heater portions.

[0216] As described in more detail above, some embodiments described herein provide a semiconductor photonic device comprising a substrate, a dielectric layer located above the substrate, optical modulator structures located above the dielectric layer, additional dielectric layers surrounding the optical modulator structures above the dielectric layer, recesses in the additional dielectric layers on one or more sides of adjacent optical modulator structures, and modulating heater portions in the recesses. In some embodiments, the recesses are further included in the dielectric layer, the modulating heater portions are in the recesses, wherein the modulating heater portions extend through the additional dielectric layers and into the dielectric layer.

[0217] The terms "about" and "substantially" can mean that a value for a given quantity is within 5% of the value (e.g., ±1%, ±2%, ±3%, ±4%, ±5% of the value). These values are merely examples and are not intended to limit the terms "about" and "substantially." The percentage of a value for a given quantity according to the disclosure can be better understood from the disclosure.

[0218] Many embodiments are described in terms of procedures, steps, and techniques that have been presented in an overview herein. Those skilled in the art will recognize that the embodiments described herein can comprise any number of procedures, steps, and techniques. These and other modifications can be made to the embodiments and any proceeds described herein without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor photonic device, characterized by, Comprising: a first dielectric layer; a plurality of second dielectric layers on the first dielectric layer; a semiconductor photonic circuit in the first dielectric layer, comprising: one or more waveguide structures; and an optical modulator structure coupled to the one or more waveguide structures; and a modulation heater structure, at least part of which is in the first dielectric layer, wherein the modulation heater structure comprises one or more heater portions laterally adjacent to the optical modulator structure in the first dielectric layer.

2. The semiconductor photonic device of claim 1, wherein, wherein the one or more heater portions extend into at least a subset of the plurality of second dielectric layers.

3. The semiconductor photonic device of claim 1, wherein the first and second semiconductor waveguides are formed in a same layer of the semiconductor photonic device. wherein the one or more heater portions comprise: a first heater portion adjacent to an outer side of a first section of the modulation heater structure; and a second heater portion adjacent to an outer side of a second section of the modulation heater structure.

4. The semiconductor photonic device of claim 3, wherein the first and second waveguides are formed in a same layer of the semiconductor photonic device. wherein the first heater portion comprises: a plurality of heating fins connected by one or more connecting sections, wherein in an upper view of the first heater portion, the plurality of heating fins and the one or more connecting sections are arranged in an S-shape.

5. A semiconductor photonic device, characterized by, Comprising: a first dielectric layer; a plurality of second dielectric layers on the first dielectric layer; a semiconductor photonic circuit in the first dielectric layer, comprising: one or more waveguide structures; and an optical modulator structure coupled to the one or more waveguide structures; and a modulation heater structure in one or more of the plurality of second dielectric layers, wherein the modulation heater structure comprises a plurality of heater portions, wherein the optical modulator structure comprises a plurality of optical modulator sections, the plurality of heater portions are respectively on the plurality of optical modulator sections of the optical modulator structure, and wherein one of the plurality of heater portions comprises a plurality of heater sections arranged along a first direction and extending towards a second direction perpendicular to the first direction.

6. The semiconductor photonic device of claim 5, wherein the first and second waveguides are formed in a same layer of the semiconductor photonic device. wherein the respective plurality of optical modulator sections extend towards the second direction.

7. The semiconductor photonic device of claim 5, wherein the first and second waveguides are formed in a same layer of the semiconductor photonic device. wherein the respective plurality of optical modulator sections extend towards the first direction.

8. The semiconductor photonic device of claim 5, wherein, wherein adjacent of the plurality of heater sections are connected by a plurality of connecting sections of the heater portion.

9. A semiconductor photonic device, comprising: Comprising: a substrate; a dielectric layer over the substrate; an optical modulator structure over the dielectric layer; an additional dielectric layer surrounding the optical modulator structure over the dielectric layer; a plurality of recesses in the additional dielectric layer adjacent to one or more sides of the optical modulator structure; and a plurality of modulation heater portions in the plurality of recesses.

10. The semiconductor photonic device of claim 9, wherein the first and second waveguides are formed in a same layer of the semiconductor photonic device. The plurality of recesses further comprise: in the dielectric layer; and The plurality of modulation heater portions in the plurality of recesses, wherein the plurality of modulation heater portions extend through the additional dielectric layer and into the dielectric layer.

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