Rapid atomic layer deposition equipment

Abstract

The utility model belongs to the technical field of atomic layer rapid deposition, and relates to atomic layer rapid deposition equipment, which comprises a first gas input assembly, a second gas input assembly and a third gas input assembly, the second gas input assembly is used for inputting second reaction gas; the reaction assembly is used for providing a reaction space; the reaction assembly is respectively connected with the first gas input assembly and the second gas input assembly; the extraction assembly is used for extracting impurities in the reaction assembly; the extraction assembly is connected with the reaction assembly. According to the atomic layer rapid deposition equipment provided by the invention, the effective adsorption efficiency is improved, and the source feeding and purging time of a precursor can be greatly shortened at a process end, so that the overall speed is greatly increased; and the use frequency of a bottle of precursor source can be prolonged economically, and the cost is saved.

Description

Technical Field

[0001] This utility model relates to the field of rapid atomic layer deposition technology, and in particular to a rapid atomic layer deposition device. Background Technology

[0002] Atomic layer deposition (ALD), also known as atomic layer epitaxy (ALE) or atomic layer chemical vapor deposition (ALCVD), was first proposed by Finnish scientists in 1974. It boasts advantages such as sequential deposition of single atomic layers, extremely uniform layer thickness, and high three-dimensional conformal properties, and has become a key step in the development of advanced semiconductor process technology.

[0003] In atomic layer deposition (ALD), the chemical reactions of new atomic layers are directly related to those of previous layers. ALD involves alternately introducing two or more gaseous precursor sources into a reactor, where they undergo chemisorption reactions on the substrate surface to form a deposited thin film. This is achieved by utilizing chemical bonds to alternately adsorb substances A and B, enabling surface-level reactive growth. ALD is self-limiting; within each pulse cycle, the gaseous precursor reacts only at the atomic bonding sites on the substrate surface, precisely covering the substrate surface with saturation. This allows for repeatable growth, atomically layer by layer, over a very wide process window.

[0004] Conventional ALD (Alternating Current Deposition) processes have significantly slower deposition rates compared to CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition). For example, in the preparation of alumina, the ALD deposition rate is typically only around 0.1 nanometers per minute; in the preparation of tool coatings using magnetron sputtering, the PVD deposition rate can reach several hundred nanometers per hour; and in microwave PECVD (Plasma Enhanced Chemical Vapor Deposition), the CVD rate can reach as high as ten nanometers per second. While ALD offers excellent thickness control, it requires a significant amount of time to prepare thicker films. Utility Model Content

[0005] In view of this, the present invention provides an atomic layer rapid deposition device.

[0006] Specifically, this utility model is achieved through the following technical solution:

[0007] According to a first aspect of the present invention, an atomic layer rapid deposition apparatus is provided, comprising:

[0008] The first gas input component is used to input the first reaction gas;

[0009] The second gas input component is used to input the second reaction gas;

[0010] A reaction assembly for providing a reaction space; the reaction assembly is connected to the first gas input assembly and the second gas input assembly respectively.

[0011] An extraction component is used to extract impurities from the reaction component; the extraction component is connected to the reaction component.

[0012] Optionally, the first gas input component includes a first pipe and a first precursor source bottle, wherein the outlet of the first pipe is connected to the reaction component, and the first precursor source bottle is connected to the first pipe.

[0013] Optionally, the first gas input component further includes a first regulating valve, which is disposed on the first pipeline.

[0014] Optionally, the second gas input component includes: a second pipe and a second precursor source bottle, wherein the outlet of the second pipe is connected to the reaction component, and the second precursor source bottle is connected to the second pipe.

[0015] Optionally, the second gas input component further includes a second regulating valve, which is disposed on the second pipeline.

[0016] Optionally, the reaction assembly includes a reaction chamber and a heating wire, wherein the reaction chamber is connected to the outlet of the first pipe in the first gas input assembly, the outlet of the second pipe in the second gas input assembly, and the extraction assembly, and the heating wire is embedded in the inner bottom wall of the reaction chamber.

[0017] Optionally, the top of the reaction chamber is provided with a first air inlet, a second air inlet, and an exhaust port, and the first air inlet, the second air inlet, and the exhaust port are respectively connected to the air outlet of the first pipe in the first gas input component, the air outlet of the second pipe in the second gas input component, and the extraction component.

[0018] Optionally, the inner wall of the reaction chamber is provided with adjustment grooves for inserting partition plates.

[0019] Optionally, a placement groove is provided on the inner bottom wall of the reaction chamber, and the placement groove is located directly above the heating wire.

[0020] Optionally, the extraction assembly includes a vacuum pump and an exhaust pipe, wherein the two ends of the exhaust pipe are respectively connected to the reaction chamber in the reaction assembly and the vacuum pump.

[0021] The technical solution provided by this utility model brings at least the following beneficial effects:

[0022] The atomic layer rapid deposition equipment provided in this application improves the effective adsorption efficiency and can greatly reduce the source and purging time of the precursor at the process end, thereby greatly speeding up the overall process. It can also extend the number of times a bottle of precursor source can be used, saving costs. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the present invention and, together with the description, serve to explain the principles of the present invention.

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 A schematic diagram of the structure of an atomic layer rapid deposition apparatus provided in an embodiment of this utility model;

[0026] Figure 2 A schematic diagram of the internal structure of the reaction chamber in an atomic layer rapid deposition apparatus provided for an embodiment of this utility model;

[0027] Figure 3 This is a top view of the reaction chamber in an atomic layer rapid deposition apparatus provided for an embodiment of the present invention. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0029] Figure 1 An atomic layer rapid deposition apparatus suitable for embodiments of the present invention is illustrated schematically.

[0030] Reference Figure 1-3 As shown, this application provides an atomic layer rapid deposition apparatus, comprising:

[0031] The first gas input component 10 is used to input the first reaction gas;

[0032] The second gas input component 20 is used to input the second reaction gas;

[0033] A reaction assembly 30 is used to provide a reaction space; the reaction assembly 30 is connected to the first gas input assembly 10 and the second gas input assembly 20 respectively.

[0034] An extraction component 40 is used to extract impurities from the reaction component 30; the extraction component 40 is connected to the reaction component 30.

[0035] In this embodiment, the first and second reactant gases are respectively input into the reaction assembly 30 through the first gas input component 10 and the second gas input component 20, and react with the sample. After the reaction, the product remains in the reaction assembly 30, and impurities are discharged through the extraction component 40. This embodiment introduces an atomic layer rapid deposition (ALD) apparatus, which achieves a highly efficient and rapid deposition process through the optimized design of a series of components, and brings economic benefits.

[0036] First Gas Input Component: Used to input the first reactant gas. In the ALD process, the first reactant gas is typically a precursor gas containing the desired element. Connection: Connected to the reaction assembly to ensure accurate gas entry into the reaction space.

[0037] Second gas input component: Used to input the second reactant gas. This is typically another precursor gas or a gas used to promote the reaction (such as an oxidizing agent or reducing agent). Connection: Also connected to the reaction assembly, it is introduced into the reaction space alternately or simultaneously with the first reactant gas.

[0038] Reaction Components: Providing the reaction space, these are the core areas where chemical reactions occur during the ALD process. The structure and materials of the reaction components must ensure effective containment and isolation of gases, while providing good thermal conductivity and temperature control. Connections: Connected to the first and second gas input components, and also to the extraction components, to enable gas input and impurity extraction.

[0039] Extraction Unit: Used to extract impurities from the reaction unit, including unreacted gases, byproducts, and other contaminants. Connection: Connected to the reaction unit to achieve impurity removal via a suitable pump or evacuation system.

[0040] The advantages of this equipment are: Improved effective adsorption efficiency: By precisely controlling the gas input and extraction, the gas concentration and reaction time within the reaction space are ensured, thereby improving the effective adsorption efficiency of the precursor on the substrate. Reduced precursor ingress and purge time: Through optimized design of the reaction components and gas input / extraction components, the precursor ingress and purge time can be significantly reduced at the process end, thus accelerating the overall deposition rate. Extended precursor source utilization: Due to the improved effective adsorption efficiency and reduced waste, the utilization rate of a single precursor source bottle can be extended, thereby reducing costs.

[0041] In summary, the atomic layer rapid deposition apparatus provided in this application achieves a highly efficient and rapid deposition process while also offering significant economic savings. This apparatus has broad application prospects in semiconductor manufacturing, materials synthesis, and other fields.

[0042] For example, the first gas input component 10 includes a first pipe 11 and a first precursor source bottle 12, wherein the outlet of the first pipe 11 is connected to the reaction component 30, and the first precursor source bottle 12 is connected to the first pipe 11.

[0043] In this embodiment, the first reaction gas enters the reaction assembly 30 via the first pipe 11, and the first reaction gas carries the first precursor in the first precursor source bottle 12 into the reaction assembly 30 at the same time.

[0044] For example, the first gas input component 10 further includes a first regulating valve 13, which is disposed on the first pipe 11.

[0045] In this embodiment, the first regulating valve 13 can regulate the fluid flow rate in the first pipe 11.

[0046] For example, the second gas input component 20 includes a second pipe 21 and a second precursor source bottle 22, wherein the outlet of the second pipe 21 is connected to the reaction component 30, and the second precursor source bottle 22 is connected to the second pipe 21.

[0047] In this embodiment, the second reaction gas enters the reaction assembly 30 via the second pipe 21, and the second reaction gas carries the second precursor in the second precursor source bottle 12 into the reaction assembly 30 at the same time.

[0048] For example, the second gas input component 20 further includes a second regulating valve 23, which is disposed on the second pipe 21.

[0049] In this embodiment, the second regulating valve 23 can regulate the fluid flow rate in the second pipe 21.

[0050] For example, the reaction assembly 30 includes a reaction chamber 31 and a heating wire 32, wherein the reaction chamber 31 is connected to the outlet of the first pipe 11 in the first gas input assembly 10, the outlet of the second pipe 21 in the second gas input assembly 20 and the extraction assembly 40, and the heating wire 32 is embedded in the inner bottom wall of the reaction chamber 31.

[0051] In this embodiment, a sample is placed in the reaction chamber 31, and the heating wire 32 can heat the sample, the first gas, and the second gas together to generate a product.

[0052] Exemplarily, the top of the reaction chamber 31 is provided with a first air inlet 33, a second air inlet 34, and an exhaust port 35. The first air inlet 33, the second air inlet 34, and the exhaust port 35 are respectively connected to the outlet of the first pipe 11 in the first gas input assembly 10, the outlet of the second pipe 21 in the second gas input assembly 20, and the extraction assembly 40. In this embodiment, the first gas enters the reaction chamber 31 through the first pipe 11 and the first air inlet 33, the second gas enters the reaction chamber 31 through the second pipe 21 and the second air inlet 34, and impurities in the reaction chamber 31 enter the extraction assembly 40 through the exhaust port 35.

[0053] For example, an adjustment groove 36 is arranged on the inner side wall of the reaction chamber 31, and the adjustment groove 36 is used to insert a partition plate.

[0054] In this embodiment, the adjustment groove 36 is provided at multiple positions and heights on the inner wall of the reaction chamber 31 as needed, and the partition plate is inserted into the adjustment groove 36, thereby changing the size of the space for reaction in the reaction chamber 31.

[0055] For example, a placement groove 37 is provided on the inner bottom wall of the reaction chamber 31, and the placement groove 37 is located directly above the heating wire 32.

[0056] In this embodiment, the placement groove 37 is used to place the sample. The depth and area of ​​the placement groove 37 can be selected as needed. The heat generated by the heating wire 32 is directly conducted to the sample in the placement groove 37.

[0057] For example, the extraction assembly 40 includes a vacuum pump 41 and an exhaust pipe 42, wherein the two ends of the exhaust pipe 42 are respectively connected to the reaction chamber 31 in the reaction assembly 30 and the vacuum pump 41.

[0058] In this embodiment of the application, the vacuum pump 41 extracts impurities, such as unreacted gas, from the reaction chamber 31 via the exhaust pipe 42 and then discharges them.

[0059] In this embodiment, the reaction chamber 31 is capsule-shaped in top view. The entire reaction chamber 31 is made of SiC composite ceramic material, with a 6-inch sample placement area in the middle of the inner bottom wall. The first pipe 11 and the second pipe 21 are also made of SiC composite ceramic material. A heating wire 32 is embedded directly below the placement slot 37 of the reaction chamber 31 to provide the temperature required for experimental deposition. The exhaust pipe 42 can be made of SiC composite ceramic material or stainless steel. The precursor source, consisting of inert gas, enters the reaction chamber 31 sequentially through the first pipe 11 and the second pipe 21, depositing a thin film in the reaction area of ​​the 6-inch deep placement slot 37. Reaction byproducts and excess gas are extracted through the exhaust port 35. Five aligned adjustment slots 36, each 1mm × 2mm in size, are provided on the inner wall of the reaction chamber 31. The distance between two adjacent adjustment slots 36 is 0.3cm, and the distance between the lowest adjustment slot 36 and the inner bottom surface of the reaction chamber 31 is 0.5cm. The adjustment slot 36 can be inserted with a retractable SiC ceramic plate partition to control the volume of the reaction chamber 31 during the reaction. A circular sample area with a depth of 1 mm and a radius of 15 cm is cut into the bottom of the reaction chamber 31, serving as a placement slot 37, which can hold samples up to 6 inches in size and is downward compatible. Due to the varying volume of the reaction chamber 31 from the lowest to the highest adjustment slot 36, it can accommodate fast ALD reactions at different rates.

[0060] In this embodiment, a capsule-shaped reaction chamber 31 is made of a novel composite ceramic material (SiC ceramic) instead of the original rectangular stainless steel or aluminum reaction chamber 31. All pipes are also made of the novel composite ceramic material (SiC ceramic). SiC ceramic possesses excellent mechanical properties, heat resistance, and corrosion resistance, characteristics that perfectly match the requirements of ALD coating. Furthermore, due to its low gas adsorption capacity, it can significantly reduce the adhesion of air molecules. During the reaction, the precursor source can adhere to the substrate surface more efficiently, reaching a saturated adsorption state more quickly, thereby increasing the reaction rate. Simultaneously, this characteristic also reduces aerosol adsorption in the pipes, reducing precursor source loss in the pipes and allowing more to enter the chamber, further improving adsorption efficiency. Furthermore, the cavity was redesigned, changing the rectangular cavity into a capsule shape to reduce gas backflow. A 1mm deep placement groove 37 was opened at the bottom of the reaction chamber 31 to reduce sample circumferential coating and maintain flow field stability. The volume of the reaction chamber 31 was further compressed to a maximum height of 3cm. This height can be further adjusted by the adjustment groove 36 inside the reaction chamber 31. This allows the precursor source to react on the substrate surface in a very limited space.

[0061] In the embodiments of this application, after the above changes, the effective adsorption efficiency is improved, and the source and purging time of the precursor can be greatly reduced at the process end, thereby greatly speeding up the overall process and extending the number of uses of a bottle of precursor source, saving costs.

[0062] In this embodiment, taking the deposition of alumina thin film as an example, a conventional 6-inch thermal atomic layer deposition (ALD) device was used for 300 cycles at an experimental temperature of 100°C, a flow rate of 30 sccm on both sides, and a process pressure of 0.1 torr. The process involved a 0.1s inlet of trimethylaluminum source, a 30s purge, a 0.03s inlet of deionized water, and a 30s purge, repeated 300 times to complete the deposition. The average film thickness was 28.4 nm, with a non-uniformity of 1.3%. However, the entire process took more than 5 hours, which was very time-consuming. Using the rapid ALD device provided in this application, at the same temperature, the inlet of trimethylaluminum source could be reduced to 0.03s, followed by a 2s purge, a 0.02s inlet of deionized water, and a 2s purge, repeated for 300 cycles. The test showed that the average film thickness reached 40 nm, with a non-uniformity of 2.1%, and the entire process took only 20 minutes. The film growth rate was significantly improved, and the difference in film thickness uniformity was minimal. This experiment was repeated multiple times, and the results were similar to those of the previous experiment. Under the same conditions, the purging time was reduced to 1 second, and growth was continued for 300 cycles. The average film thickness was measured to be 47 nm, and the uniformity was 2.3%. The experiment could be completed in just over 10 minutes, and repeated experiments yielded similar results. Therefore, it is demonstrated that the atomic layer rapid deposition equipment provided in this application can complete the preparation of rapid ALD films.

[0063] The following is a summary and analysis of the components and functions of this atomic layer rapid deposition (ALD) equipment:

[0064] I. Gas Input Component

[0065] First gas input assembly 10: includes a first pipe 11, a first precursor source bottle 12, and a first regulating valve 13. Function: used to input the first reaction gas and carry the first precursor into the reaction assembly 30. Regulation: the first regulating valve 13 controls the fluid flow rate to ensure accurate gas input.

[0066] Second gas input assembly 20: includes a second pipe 21, a second precursor source bottle 22, and a second regulating valve 23. Function: used to input the second reaction gas and carry the second precursor into the reaction assembly 30. Regulation: the second regulating valve 23 can also control the fluid flow rate to achieve precise gas input.

[0067] II. Reaction components: reaction chamber 31 and heating wire 32.

[0068] Reaction chamber 31: Provides reaction space, and its top is provided with a first air inlet 33, a second air inlet 34, and an exhaust port 35, which are respectively connected to the first pipe 11, the second pipe 21, and the extraction assembly 40. Heating wire 32: Embedded in the inner bottom wall of the reaction chamber 31, used to heat the sample and reaction gas to promote the chemical reaction.

[0069] The reaction chamber 31, viewed from above, is capsule-shaped and constructed of SiC composite ceramic material, exhibiting excellent heat resistance and corrosion resistance. The inner bottom wall has a placement groove 37 for placing samples; the depth and area can be selected as needed. An adjustment groove 36 is provided on the inner side wall, into which a partition plate can be inserted to change the size of the reaction space, accommodating ALD reactions at different rates.

[0070] III. Extraction components: vacuum pump 41 and exhaust pipe 42.

[0071] Function: To remove impurities, such as unreacted gases and byproducts, from the reaction chamber 31 via vacuum pump 41 and exhaust pipe 42.

[0072] Materials: The exhaust pipe 42 can be made of SiC composite ceramic material or stainless steel to adapt to high temperature and corrosive environments.

[0073] IV. Equipment Features and Advantages

[0074] Highly efficient adsorption: SiC ceramic materials have low gas adsorption capacity, reducing the adhesion of air molecules and improving the effective adsorption efficiency of precursors on the substrate surface. Rapid reaction: Optimized reaction chamber design and gas input / extraction system significantly reduce precursor loading and purging time, increasing the overall deposition rate. Cost-effective: Extends the number of precursor source uses, reducing costs. Flexible and adjustable: The adjustment tank 36 and placement tank 37 within the reaction chamber allow the equipment to adapt to samples of different sizes and shapes, as well as ALD reactions at different rates.

[0075] V. Experimental Verification

[0076] Coating experiment: Taking the deposition of alumina thin film as an example, the deposition time on a conventional 6-inch thermal ALD equipment is more than 5 hours, while on the equipment provided in this application, the deposition time is only 20 minutes under the same conditions, and the film thickness uniformity is good. After further reducing the purging time, the deposition time can be shortened to more than 10 minutes, which again verifies the rapid deposition capability of the equipment.

[0077] In summary, this atomic layer rapid deposition (ALD) equipment, through a series of innovative designs and technological optimizations, achieves a highly efficient, rapid, and economical ALD deposition process, possessing broad application prospects and significant technological advantages. The ALD equipment provided in this application improves effective adsorption efficiency and significantly reduces precursor feed and purging time at the process end, thereby greatly accelerating the overall process speed. Economically, it also extends the number of uses of a single precursor source, saving costs.

[0078] It should be noted that in this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0079] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0080] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0081] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0082] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. An atomic layer rapid deposition apparatus, characterized by, The utility model relates to a kind of vacuum coating machine, including: First gas input component for inputting first reaction gas; Second gas input component for inputting second reaction gas; Reaction component for providing reaction space;The reaction component is connected with the first gas input component and the second gas input component respectively; Extraction component for extracting impurities in the reaction component;The extraction component is connected with the reaction component.

2. An atomic layer rapid deposition apparatus according to claim 1, characterized in that, The first gas input component includes: first pipeline and first precursor source bottle, wherein the gas outlet of the first pipeline is connected with the reaction component, and the first precursor source bottle is connected with the first pipeline.

3. An atomic layer rapid deposition apparatus according to claim 2, characterized in that, The first gas input component further includes: first regulating valve, and the first regulating valve is arranged on the first pipeline.

4. The atomic layer rapid deposition apparatus of claim 1, wherein, The second gas input component includes: second pipeline and second precursor source bottle, wherein the gas outlet of the second pipeline is connected with the reaction component, and the second precursor source bottle is connected with the second pipeline.

5. An atomic layer rapid deposition apparatus according to claim 4, characterized in that, The second gas input component further includes: second regulating valve, and the second regulating valve is arranged on the second pipeline.

6. The atomic layer rapid deposition apparatus of claim 1, wherein, The reaction component includes: reaction chamber and heating wire, wherein the reaction chamber is connected with the gas outlet of the first pipeline in the first gas input component, the gas outlet of the second pipeline in the second gas input component and the extraction component respectively, and the heating wire is embedded in the inner bottom wall of the reaction chamber.

7. An atomic layer rapid deposition apparatus according to claim 6, characterized in that, The top of the reaction chamber is provided with first gas inlet, second gas inlet and air outlet, and the first gas inlet, the second gas inlet and the air outlet are connected with the gas outlet of the first pipeline in the first gas input component, the gas outlet of the second pipeline in the second gas input component and the extraction component respectively.

8. The atomic layer rapid deposition apparatus according to claim 6, characterized by Adjusting groove is arranged on the inner side wall of the reaction chamber, and the adjusting groove is used for inserting partition plate.

9. The atomic layer rapid deposition apparatus of claim 6, wherein, The inner bottom wall of the reaction chamber is provided with placing groove, and the placing groove is located directly above the heating wire.

10. The atomic layer rapid deposition apparatus of claim 1, wherein, The extraction component includes: vacuum pump and exhaust pipe, wherein the two ends of the exhaust pipe are connected with the reaction chamber in the reaction component and the vacuum pump respectively.

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