Multi-chamber diamond growth equipment integrated with doping process

Abstract

The utility model relates to the technical field of diamond growth equipment, in particular to multi-chamber diamond growth equipment integrated with a doping process. The device comprises a shell, the interior of the shell is divided into a plurality of growth cavities through a plurality of partition plates, a front door is installed in front of each growth cavity, a rotating assembly is installed at the bottom in each growth cavity, a base plate is installed on each rotating assembly, and a heating structure is arranged in each base plate; an air inlet pipe connected to external air supply equipment and a vacuum pipe connected to external vacuum equipment are connected to the rear part of the shell, the vacuum pipe and the air inlet pipe are respectively connected to each growth cavity through branch pipes, and a microwave unit is arranged on each branch pipe of the air inlet pipe; according to the utility model, through the design of a plurality of independent chambers, the common gas inlet and vacuum equipment, each chamber can be independently controlled to operate, and the rotating assembly is designed, so that the diamond can be driven to continuously rotate at a low speed in the deposition and growth process of the diamond, the uniformity of contact with gas is improved, the non-uniform doping of the diamond is prevented, and the product quality is ensured.

Description

Technical Field

[0001] This utility model relates to the technical field of diamond growth equipment, specifically to a multi-chamber diamond growth equipment with integrated doping process. Background Technology

[0002] Diamond possesses extremely high hardness, excellent thermal conductivity, wide bandgap semiconductor properties, and good biocompatibility, making it a commonly used material in modern industry, optics, and other sectors. However, natural diamond resources are scarce and expensive, thus requiring artificial synthesis. Chemical vapor deposition (CVD) is currently the mainstream preparation technology for diamond.

[0003] Introducing doping elements such as boron, nitrogen, and phosphorus during diamond growth can significantly alter the electrical conductivity, luminescence properties, or other functional properties of diamond. However, traditional diamond growth equipment is typically a single-chamber design, resulting in low production efficiency. Furthermore, multiple machines require their own gas supply and vacuum equipment, leading to higher costs and the potential for uneven doping during multiple batches of production. Utility Model Content

[0004] The purpose of this invention is to address the shortcomings and deficiencies of existing technologies by providing a rationally designed multi-chamber diamond growth device with integrated doping process, which can solve the aforementioned defects.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: It includes a shell, the shell is divided into multiple growth chambers by multiple partitions, each growth chamber has a front door installed in front, each growth chamber has a rotating assembly installed at the bottom, a substrate is installed on the rotating assembly, a heating structure is provided in the substrate, an air inlet pipe connected to an external gas supply device and a vacuum pipe connected to an external vacuum device are connected to the rear of the shell, the vacuum pipe and the air inlet pipe are respectively connected to each growth chamber through branch pipes, and each branch pipe of the air inlet pipe is provided with a microwave unit.

[0006] Preferably, the rotating assembly includes a deceleration base installed at the bottom of the growth chamber, a rotating shaft rotatably connected to the deceleration base, a base plate disposed at the top of the rotating shaft, and a drive motor installed above the deceleration base.

[0007] Preferably, a cover is provided above the deceleration base and the drive motor, the rotating shaft moves through the top of the cover, and a rotary seal is provided at the connection between the two.

[0008] Preferably, a control valve and a one-way valve are installed on the vacuum tube and each branch of the inlet pipe. The airflow direction of the one-way valve on the inlet pipe is set towards the growth chamber, while the one-way valve on the vacuum tube is set towards the opposite direction of the growth chamber.

[0009] Preferably, the heating structure includes multiple annular heating rings embedded in the substrate, with the multiple heating rings arranged in a nested manner.

[0010] Preferably, the control valve on the vacuum tube is a solenoid valve.

[0011] Preferably, the control valve on the intake pipe is a flow valve.

[0012] The beneficial effects of this utility model after adopting the above structure are:

[0013] This invention features a design with multiple independent chambers, allowing for the sharing of air intake and vacuum equipment. Each chamber can be independently controlled and will not affect the others. A rotating component is designed to drive the diamond to rotate continuously at low speed during the diamond deposition and growth process, improving the uniformity of contact with the gas, preventing uneven diamond doping, and ensuring product quality. The multi-ring nested heating structure ensures uniform heating of the substrate. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the external structure of this utility model;

[0015] Figure 2 This is a rear view of the present invention;

[0016] Figure 3 This is a schematic diagram of the internal structure of the casing in this utility model;

[0017] Figure 4 This is a longitudinal cross-sectional view of the substrate in this utility model;

[0018] Figure 5 This is a cross-sectional view of the substrate in this utility model.

[0019] Explanation of reference numerals in the attached figures:

[0020] 1. Shell; 2. Growth chamber; 3. Front door; 4. Cover; 5. Reduction base; 6. Drive motor; 7. Rotation shaft; 8. Substrate; 9. Heating ring; 10. Inlet pipe; 11. Vacuum tube; 12. Control valve; 13. One-way valve; 14. Microwave unit. Detailed Implementation

[0021] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0022] See Figures 1-5 As shown, it includes a housing 1, which is divided into multiple growth chambers 2 by multiple partitions. Each growth chamber 2 has a front door 3 installed in front to facilitate operation and observation of the internal growth process. Each growth chamber 2 has a rotating assembly installed at the bottom, and a substrate 8 is installed on the rotating assembly. The substrate 8 has a heating structure for uniform heating to control the temperature. The rear of the housing 1 is connected to an air inlet pipe 10 connected to an external gas supply device and a vacuum pipe 11 connected to an external vacuum device. The vacuum pipe 11 and the air inlet pipe 10 are respectively connected to each growth chamber 2 through branch pipes. Each branch pipe of the air inlet pipe 10 is equipped with a microwave unit 14 for exciting gas molecules to carry out a reaction.

[0023] The rotating assembly includes a reduction base 5 installed at the bottom of the growth chamber 2. The reduction base 5 is equipped with a reduction gear set. A rotating shaft 7 is rotatably connected to the reduction base 5. The substrate 8 is located at the top of the rotating shaft 7. A drive motor 6 is installed above the reduction base 5 to provide power, ensuring that the substrate 8 rotates smoothly and improving the uniformity of growth. A cover 4 is provided above the reduction base 5 and the drive motor 6. The rotating shaft 7 moves through the top of the cover 4, and a rotation seal is provided at the connection between the two to effectively prevent gas leakage and keep the inside of the chamber clean, thereby preventing substances generated during the reaction from affecting the components of the rotating assembly.

[0024] Control valves 12 and one-way valves 13 are installed on the vacuum tube 11 and each branch of the gas inlet pipe 10. The gas flow direction of the one-way valve 13 on the gas inlet pipe 10 is set towards the growth chamber 2 to ensure one-way gas flow. The one-way valve 13 on the vacuum tube 11 is set towards the opposite direction of the growth chamber 2 to prevent gas backflow. The heating structure includes multiple annular heating rings 9 embedded in the substrate 8. The multiple heating rings 9 are nested to provide a uniform and adjustable temperature distribution.

[0025] The control valve 12 on the vacuum tube 11 is a solenoid valve, which can respond quickly and control the vacuum level precisely; the control valve 12 on the inlet pipe 10 is a high-precision flow valve, which is used to precisely adjust the gas flow rate to ensure the stability and controllability of the growth process.

[0026] In use, each growth chamber 2 can be independently controlled by the control valve 12 of the vacuum tube 11, and each growth chamber 2 can be controlled by the control valve 12 on the air inlet pipe 10. A high-precision flow valve is used to control the air inlet speed of each growth chamber 2 to meet the needs of diamond growth. The incoming working gas is excited by the microwave unit 14 to generate plasma and produce a high-quality thin film. During this process, the added gas is controlled to incorporate the required elements, so that doping can be completed during the deposition growth process. The drive motor 6 can drive the rotating shaft 7 to rotate after being reduced in speed by the reduction gear set in the reduction base 5, which in turn drives the substrate 8 to rotate. This allows the diamond to maintain a low speed rotation during the growth process, thereby increasing the contact with the gas and preventing differences in the effective gas available to different parts of the diamond due to the air inlet angle, thus ensuring the uniformity of the diamond product material.

[0027] It should be understood that the above-described specific embodiments of this utility model are merely illustrative or explanatory of the principles of this utility model and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of this utility model should be included within the protection scope of this utility model. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

Claims

1. A multi-chamber diamond growth apparatus incorporating a doping process, comprising a housing (1), characterised in that: The shell (1) is divided into multiple growth cavities (2) by multiple partitions, a front door (3) is installed in front of each growth cavity (2), a rotating assembly is installed at the bottom of each growth cavity (2), a substrate (8) is installed on the rotating assembly, a heating structure is arranged in the substrate (8), an air inlet pipe (10) connected to an external air supply device and a vacuum pipe (11) connected to an external vacuum device are connected to the rear of the shell (1), the vacuum pipe (11) and the air inlet pipe (10) are respectively connected to each growth cavity (2) through branch pipes, and a micro pump unit (14) is arranged on each branch pipe of the air inlet pipe (10).

2. An integrated doped process multi-chamber diamond growth apparatus as defined in claim 1, wherein: The rotating assembly comprises a deceleration base (5) installed at the bottom of the growth cavity (2), a rotating shaft (7) rotatably connected to the deceleration base (5), and the substrate (8) arranged at the top end of the rotating shaft (7), and a drive motor (6) installed above the deceleration base (5).

3. An integrated doped process multi-chamber diamond growth apparatus as defined in claim 2, wherein: A cover (4) is arranged above the deceleration base (5) and the drive motor (6), the rotating shaft (7) passes through the top of the cover (4) and is rotatably connected to the cover (4).

4. The integrated doped process multi-chamber diamond growth apparatus of claim 1, wherein: A control valve (12) and a one-way valve (13) are arranged on the vacuum pipe (11) and each branch pipe of the air inlet pipe (10), the air flow direction of the one-way valve (13) on the air inlet pipe (10) is arranged towards the growth cavity (2), and the one-way valve (13) on the vacuum pipe (11) is arranged towards the opposite direction of the growth cavity (2).

5. The integrated doped process multi-chamber diamond growth apparatus of claim 1, wherein: The heating structure comprises multiple annular heating rings (9) embedded in the substrate (8), and the multiple heating rings (9) are arranged in a nested manner.

6. An integrated doped process multi-chamber diamond growth apparatus as defined in claim 4, wherein: The control valve (12) on the vacuum pipe (11) is an electromagnetic valve.

7. The integrated doped process multi-chamber diamond growth apparatus of claim 4, wherein: The control valve (12) on the air inlet pipe (10) is a flow valve.

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