Tea golden coating structure and low-emissivity glass
By using an alternating arrangement of silicon nitride dielectric and functional layers in a tea-gold coating structure, the problems of limited color and insufficient performance of existing tea-gold glass are solved, achieving diversified color adjustment and improved low-radiation performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2026-03-13
AI Technical Summary
Existing tinted glass is formed through a coloring process, resulting in a single color and poor reflectivity and heat insulation performance, making it difficult to meet diverse color requirements and energy-saving needs.
A tea-gold plating structure with multiple silicide dielectric layers and functional layers interleaved is formed by magnetron sputtering. The thickness of the silicide dielectric layer gradually increases, and it is combined with a zirconium oxide layer and an aluminum-doped zinc oxide layer to improve color adjustment and low radiation performance.
It achieves diverse color adjustment capabilities and excellent low-emissivity of the tea-gold coating structure, enhancing the market adaptability and energy-saving effect of the glass.
Smart Images
Figure CN223991056U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electroplating technology, and in particular to a tea-gold plating structure and low-emissivity glass. Background Technology
[0002] In today's increasingly innovative construction industry, different types and colors of glass are needed to make buildings more magnificent and beautiful, considering the overall appearance of the city and the harmony of building complexes. Having a variety of color coating technologies means having better market adaptability and the ability to meet customer needs.
[0003] Tea gold usually gives people a gorgeous visual aesthetic, and its application in the construction industry is gradually increasing. At present, tea gold glass on the market is usually achieved by coloring the glass, that is, by adding colorants such as metal oxides and metal colloidal particles to ordinary glass. These particles can color the glass during the high-temperature melting process.
[0004] However, such colored glass mainly presents its color by absorbing light, resulting in a single color that is difficult to control. At the same time, its reflective and heat insulation properties are poor, thus contributing little to energy conservation. Utility Model Content
[0005] The main purpose of this application is to provide a tea-gold coating structure and low-emissivity glass, which aims to improve the color adjustment capability of the tea-gold coating structure and facilitate the diversification of product categories.
[0006] To achieve the above objectives, embodiments of this application provide a tea-gold plating structure, which includes multiple silicide dielectric layers and functional layers, wherein the functional layer is connected to at least one silicide dielectric layer; the multiple silicide dielectric layers and the functional layer are staggered and stacked, and the thickness of the multiple silicide dielectric layers gradually increases along the stacking direction.
[0007] In some embodiments, the plurality of silicide dielectric layers include a first dielectric layer, a second dielectric layer and a third dielectric layer, wherein the thickness ratio of the first dielectric layer, the second dielectric layer and the third dielectric layer is 1:(1.1-1.3):(3-3.5).
[0008] In some embodiments, the thickness of the first dielectric layer is 27 nm to 29 nm.
[0009] In some embodiments, the thickness of the first dielectric layer is 27.6 nm, the thickness of the second dielectric layer is 31.4 nm, and the thickness of the third dielectric layer is 95.4 nm.
[0010] In some embodiments, the thickness of the first dielectric layer is 28.6 nm, the thickness of the second dielectric layer is 33.4 nm, and the thickness of the third dielectric layer is 95.4 nm.
[0011] In some embodiments, the tea-gold plating structure further includes a zirconium oxide layer disposed on the surface of the third dielectric layer opposite to the second dielectric layer.
[0012] In some embodiments, the number of functional layers is two, and the thickness of the functional layer disposed between the first dielectric layer and the second dielectric layer is less than the thickness of the functional layer disposed between the second dielectric layer and the third dielectric layer.
[0013] In some embodiments, the tea-gold plating structure further includes an aluminum-doped zinc oxide layer disposed between the nitrosilicide dielectric layer and the functional layer.
[0014] In some embodiments, the functional layer is a nickel-chromium alloy layer or a silver layer.
[0015] This application also provides a low-emissivity glass, which includes a glass substrate and a tea-gold plating structure as provided in any of the foregoing embodiments, wherein the tea-gold plating structure is deposited on the surface of the glass substrate.
[0016] The technical solution of this application, by setting multiple silicon nitride dielectric layers and functional layers alternately, can utilize the selective reflection and absorption of light by silicon nitride to make the coating appear tea-gold. Furthermore, the setting of multiple silicon nitride dielectric layers enhances the ability to adjust the tea-gold color, thereby meeting the different color needs of more users. At the same time, setting multiple silicon nitride dielectric layers is beneficial to improving the low-emissivity performance of the coating structure, so that the glass substrate with the tea-gold coating structure has good low-emissivity performance. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0018] Figure 1 This is a cross-sectional structural schematic diagram of a tea-gold plating structure provided in an embodiment of this application;
[0019] Figure 2 This is a schematic cross-sectional view of a low-emissivity glass provided in an embodiment of this application;
[0020] Figure 3 yes Figure 2The enlarged view of part A of the low-emissivity glass shown.
[0021] Explanation of reference numerals: 1000, low-emissivity glass; 200, glass substrate;
[0022] 100. Tea-gold plating structure; 10. Nitrogen silicon oxide dielectric layer; 11. First dielectric layer; 12. Second dielectric layer; 13. Third dielectric layer; 20. Functional layer; 30. Zirconia layer; 40. Aluminum-doped zinc oxide layer.
[0023] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0025] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.
[0026] Furthermore, the use of terms such as "first" and "second" in this application is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed in this application.
[0027] In today's increasingly innovative construction industry, different types and colors of glass are needed to make buildings more magnificent and beautiful, considering the overall appearance of the city and the harmony of building complexes. Having a variety of color coating technologies means having better market adaptability and the ability to meet customer needs.
[0028] Tea gold usually gives people a gorgeous visual aesthetic, and its application in the construction industry is gradually increasing. At present, tea gold glass on the market is usually achieved by coloring the glass, that is, by adding colorants such as metal oxides and metal colloidal particles to ordinary glass. These particles can color the glass during the high-temperature melting process.
[0029] However, such colored glass mainly presents its color by absorbing light, resulting in a single color that is difficult to control. At the same time, its reflective and heat insulation properties are poor, thus contributing little to energy conservation.
[0030] Please see Figure 1 This application provides a tea-gold plating structure 100, which includes a plurality of silicide dielectric layers 10 and a functional layer 20. The functional layer 20 is connected to at least one silicide dielectric layer 10. The plurality of silicide dielectric layers 10 and the functional layer 20 are staggered and stacked, and the thickness of the plurality of silicide dielectric layers 10 gradually increases along the stacking direction.
[0031] The tea-gold plating structure 100 aims to create a tea-gold plating structure with good low-emissivity through the interaction of multiple plating layers, providing people with a wider range of color choices in the construction industry.
[0032] In these embodiments of the present application, the tea-gold plating structure 100 can be deposited by magnetron sputtering to deposit different layers of the tea-gold plating structure 100 onto the substrate surface in sequence to form a stacked tea-gold plating structure 100.
[0033] The silicide dielectric layer 10 is a coating layer that plays a role in color adjustment and control in the tea-gold plating structure 100. During the production stage, the target material used for the cathode can be set to be a silicon-aluminum target, and the silicide dielectric layer 10 can be formed by introducing high-purity argon and high-purity nitrogen in the sputtering process.
[0034] Specifically, the silicon nitride in the silicide dielectric layer 10 mainly serves as an auxiliary function for connecting and protecting the functional layer 20. The industrial gas used and its ratio can be determined according to different usage requirements. For example, in these embodiments of this application, the ratio of high-purity argon gas to high-purity nitrogen gas can be set to 1:1 for sputtering to form the aforementioned silicide dielectric layer 10.
[0035] The function of the functional layer 20 is to enhance the low-emissivity performance of the tea-gold plating structure 100 and to provide some protection for the silicon nitride dielectric layer 10.
[0036] The functional layer 20 is connected to at least one silicide dielectric layer 10, meaning that the functional layer 20 can be disposed on the top or bottom layer of the tinted gold plating structure 100. In this case, the functional layer 20 is connected to the silicide dielectric layer 10. In some embodiments, after a functional layer 20 is deposited on a silicide dielectric layer 10 by sputtering, another silicide dielectric layer 10 can also be deposited on the functional layer 20 by sputtering. In this case, the two end faces of the functional layer 20 are respectively connected to the two silicide dielectric layers 10.
[0037] This forms a structure in which multiple silicon nitride dielectric layers 10 and functional layers 20 are staggered and stacked. In some embodiments, the functional layers 20 may also be configured to have good reflectivity for certain colors of light, so as to improve the low-emissivity performance of the tea-gold plating structure 100 while reducing the probability of affecting the color of the tea-gold plating structure 100.
[0038] In these embodiments of this application, by setting the number of silicon nitride dielectric layers 10 to be multiple, the number of structural layers of the tea-gold plating structure 100 can be increased, thereby increasing the number of functional layers 20. This facilitates the differentiation of the functions of different functional layers 20, enabling the tea-gold plating structure 100 to obtain better low-radiation performance.
[0039] Meanwhile, in these embodiments of the present application, the thickness of multiple nitrosilicide dielectric layers 10 can be gradually increased to make the tea gold plating structure 100 form a structure with a thinner plating at one end and a thicker plating at the other end along the stacking direction. This is beneficial to improve the structural consistency of the multilayer tea gold plating structure 100 and make it more reliable.
[0040] According to the tea-gold coating structure 100 provided in the embodiments of this application, by setting multiple silicon nitride dielectric layers 10 and functional layers 20 alternately, the selective reflection and absorption of light by silicon nitride can be utilized to make the coating appear tea-gold. Moreover, the setting of multiple silicon nitride dielectric layers 10 improves the ability to adjust the tea-gold color, thereby meeting the different color needs of more users. At the same time, setting multiple silicon nitride dielectric layers 10 is beneficial to improving the low-emissivity performance of the coating structure, so that the glass substrate coated with the tea-gold coating structure 100 has good low-emissivity performance.
[0041] In some embodiments, the plurality of silicide dielectric layers 10 include a first dielectric layer 11, a second dielectric layer 12 and a third dielectric layer 13, and the thickness ratio of the first dielectric layer 11, the second dielectric layer 12 and the third dielectric layer 13 is 1:(1.1-1.3):(3-3.5).
[0042] The plurality of silicon nitride dielectric layers 10 include a first dielectric layer 11, a second dielectric layer 12 and a third dielectric layer 13. This means that in these embodiments of the present application, the number of silicon nitride dielectric layers 10 is three, and the thickness of the first dielectric layer 11, the second dielectric layer 12 and the third dielectric layer 13 gradually increases.
[0043] In these embodiments of this application, a thin first dielectric layer 11 can be deposited on the surface of the substrate firstly to create a good connection between the first dielectric layer 11 and the substrate. After a functional layer 20 is deposited on the surface of the first dielectric layer 11 away from the substrate, a slightly thicker second dielectric layer 12 can be deposited on the surface of the functional layer 20 away from the first dielectric layer 11 to further improve the structural consistency between the tea-gold plating structure 100 and the substrate. After a functional layer 20 is deposited on the surface of the second dielectric layer 12 away from the substrate, a third dielectric layer 13 can be deposited on the surface of the functional layer 20 away from the second dielectric layer 12 to regulate the overall color state of the tea-gold plating structure 100. In this way, the tea-gold plating structure 100 can achieve good structural consistency with the substrate while adjusting the color to the customer's requirements.
[0044] In these embodiments of the present application, by controlling the thickness ratio of the first dielectric layer 11, the second dielectric layer 12 and the third dielectric layer 13 to be 1:(1.1-1.3):(3-3.5), the influence of each silicon nitride dielectric layer 10 on light transmittance can be reduced and better processing performance can be obtained.
[0045] In some embodiments, the thickness of the first dielectric layer 11 is 27 nm to 29 nm. Therefore, the thickness of the second dielectric layer 12 should be between 29.7 nm and 37.7 nm; and the thickness of the third dielectric layer 13 should be between 81 nm and 101.5 nm. This ensures that the tea-gold plating structure 100 possesses good mechanical properties and light transmittance.
[0046] For example, in some embodiments, the thickness of the first dielectric layer 11 may be set to 27.3 nm, 27.6 nm, 27.9 nm, 28.2 nm, 28.5 nm or 28.8 nm.
[0047] In some embodiments, the tea-gold plating structure 100 further includes a zirconium oxide layer 30, which is disposed on the surface of the third dielectric layer 13 opposite to the second dielectric layer 11.
[0048] The function of the zirconia layer 30 is to provide protection. Because zirconia itself has the characteristics of high hardness and strong wear resistance, in these embodiments of this application, the zirconia layer 30 is disposed on the surface of the third dielectric layer 13 away from the second dielectric layer 11, that is, the surface of the tea gold plating structure 100 away from the substrate, so as to improve the mechanical properties and scratch resistance of the tea gold plating structure 100, making the tea gold plating structure 100 less likely to be scratched during use. At the same time, it can also improve the thermal stability and oxidation resistance of the tea gold plating structure 100 during heat treatment.
[0049] In some embodiments, the number of functional layers 20 is two, and the thickness of the functional layer 20 disposed between the first dielectric layer 11 and the second dielectric layer 12 is less than the thickness of the functional layer 20 disposed between the second dielectric layer 12 and the third dielectric layer 13.
[0050] In other words, in these embodiments of this application, the functional layer 20 is disposed between adjacent silicon nitride dielectric layers 10, and the thickness of the functional layer 20 gradually increases with the stacking direction of the first dielectric layer 11, the second dielectric layer 12 and the third dielectric layer 13, so as to adapt to different silicon nitride dielectric layers 10.
[0051] In these embodiments of this application, the functional layer 20 can be a nickel-chromium alloy layer or a silver layer. The nickel-chromium alloy functional layer 20 has a certain absorption and reflection effect on visible light, thereby absorbing and reflecting light of a specific wavelength, thus improving the low-emissivity performance of the tea-gold plating structure 100 while ensuring the formation of the tea-gold color.
[0052] It should be noted that in these embodiments of this application, the materials of different functional layers 20 can be the same or different, and can be selected according to actual needs. This application does not limit this.
[0053] In some embodiments, the tea-gold plating structure 100 further includes an aluminum-doped zinc oxide layer 40, which is disposed between the nitrosilicide dielectric layer 10 and the functional layer 20.
[0054] The aluminum-doped zinc oxide layer 40 has a good smooth structure and a good refractive index. In these embodiments of the present application, the aluminum-doped zinc oxide layer 40 is disposed between the silicide dielectric layer 10 and the functional layer 20, which can make the transition and bonding between the silicide dielectric layer 10 and the functional layer 20 better, thereby further enhancing the film quality of the tea gold coating structure 100.
[0055] Meanwhile, the aluminum-doped zinc oxide layer 40 has better oxidation resistance during the tempering process. In the embodiment where the tea-gold coating structure 100 is applied to low-emissivity glass, the yield zinc oxide layer 40 is provided between the nitrosilicide dielectric layer 10 and the functional layer 20, which can improve the tempering performance of low-emissivity glass and reduce the use of nickel and chromium, thereby further improving the transmittance of low-emissivity glass.
[0056] In these embodiments of the present application, the aluminum-doped zinc oxide layer 40 can be disposed between the third dielectric layer 13 and the functional layer 20 (between the third dielectric layer 13 and the second dielectric layer 12) to further enhance the connection strength between the thicker third dielectric layer 13 and the second dielectric layer 12, resulting in better reliability.
[0057] In some embodiments, the thickness of the first dielectric layer 11 is 27.6 nm, the thickness of the second dielectric layer 12 is 31.4 nm, and the thickness of the third dielectric layer 13 is 95.4 nm.
[0058] In these embodiments of this application, a coated glass sheet is formed after depositing a tea-gold coating structure 100 with the above parameters on the surface of the glass substrate. Taking a coated glass sheet with a thickness of 6mm as an example, transmittance and color tests are performed, and the following data can be obtained:
[0059] The functional layer 20 between the first dielectric layer 11 and the second dielectric layer 12, and the functional layer 20 between the second dielectric layer 12 and the third dielectric layer 13 are both made of nickel-chromium alloy, and their thicknesses are set to 3.5 nm and 10.8 nm, respectively.
[0060] The obtained 6mm coated glass monolayer exhibits stable thermal processing performance, without defects such as cracking, oxidation, demolding, or scratches. Specific color and performance indicators are as follows: transmittance T = 27.47%, a* = 1.97, b* = 2.12; glass surface color L = 37.47, a* = 6.99, b* = 6.43; emissivity = 0.24.
[0061] In some embodiments, the thickness of the first dielectric layer 11 is 28.6 nm, the thickness of the second dielectric layer 12 is 33.4 nm, and the thickness of the third dielectric layer 13 is 95.4 nm.
[0062] In these embodiments of this application, a coated glass sheet is formed after depositing a tea-gold coating structure 100 with the above parameters on the surface of the glass substrate. Taking a coated glass sheet with a thickness of 6mm as an example, transmittance and color tests are performed, and the following data can be obtained:
[0063] The functional layer 20 between the first dielectric layer 11 and the second dielectric layer 12, and the functional layer 20 between the second dielectric layer 12 and the third dielectric layer 13 are both made of nickel-chromium alloy, and their thicknesses are set to 3.5 nm and 10.8 nm, respectively.
[0064] The obtained 6mm coated glass monolayer exhibits stable thermal processing performance, without defects such as cracking, oxidation, demolding, or scratches. Specific color and performance indicators are as follows: transmittance T = 28.3%, a* = 1.67, b* = 2.26; glass surface color L = 37.62, a* = 6.86, b* = 6.54; emissivity = 0.23.
[0065] The tea-gold coating structure 100 in the above two embodiments forms a coated glass sheet with good appearance and quality after being deposited on the glass substrate 200. At the same time, the color can be finely adjusted according to different needs, while maintaining the mechanical properties unchanged, resulting in higher reliability.
[0066] Please refer to the following: Figure 2 and Figure 3 This application also provides a low-emissivity glass 1000, which includes a glass substrate 200 and a tea-gold plating structure 100 as provided in any of the foregoing embodiments, wherein the tea-gold plating structure 100 is deposited on the surface of the glass substrate 200.
[0067] The above description is merely an exemplary embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made based on the technical concept of this application and the contents of the specification and drawings of this application, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this application.
Claims
1. A tea gold plating structure, characterized by, Comprising: a plurality of nitride-silicide dielectric layers; a functional layer connected to at least one of the nitride-silicide dielectric layers; a plurality of the nitride-silicide dielectric layers are stacked with the functional layer interleaved, and the thickness of the plurality of the nitride-silicide dielectric layers gradually increases along the stacking direction; wherein the plurality of the nitride-silicide dielectric layers comprises a first dielectric layer, a second dielectric layer and a third dielectric layer, the thickness of the first dielectric layer, the second dielectric layer and the third dielectric layer gradually increases, the number of the functional layers is two, and the thickness of the functional layer disposed between the first dielectric layer and the second dielectric layer is less than the thickness of the functional layer disposed between the second dielectric layer and the third dielectric layer; the tea-gold plating layer structure further comprises a zirconium oxide layer, the zirconium oxide layer is disposed on the surface of the third dielectric layer away from the second dielectric layer.
2. The tea gold plating structure according to claim 1, wherein The thickness ratio of the first dielectric layer, the second dielectric layer and the third dielectric layer is: 1: (1.1-1.3): (3-3.5).
3. The tea gold plating structure according to claim 2, wherein The thickness of the first dielectric layer is 27nm to 29nm.
4. The tea gold plating structure according to claim 3, wherein The thickness of the first dielectric layer is 27.6nm, the thickness of the second dielectric layer is 31.4nm, and the thickness of the third dielectric layer is 95.4nm.
5. The tea gold plating structure according to claim 3, wherein The thickness of the first dielectric layer is 28.6nm, the thickness of the second dielectric layer is 33.4nm, and the thickness of the third dielectric layer is 95.4nm.
6. The tea gold plating structure according to claim 1, wherein The tea-gold plating layer structure further comprises an aluminum-doped zinc oxide layer, the aluminum-doped zinc oxide layer is disposed between the nitride-silicide dielectric layer and the functional layer.
7. The tea gold plating structure according to claim 1, wherein The functional layer is a nickel-chromium alloy layer or a silver layer.
8. A low-emissivity glass, characterized by, The tea-gold plating layer structure as claimed in any one of claims 1 to 7 is plated on the surface of a glass substrate.