Monolithic integrated multi-channel fin-shaped gate HEMT and groove SBD and preparation method thereof

By using a monolithic integrated multi-channel fin gate HEMT and grooved SBD fabrication method, the multi-channel fin gate HEMT and Si SBD are integrated on the same substrate layer, solving the problems of high reverse conduction loss, loose connection between devices and low system stability in the prior art. This achieves device miniaturization and cost reduction, and improves system stability and reliability.

CN121665666APending Publication Date: 2026-03-13XIDIAN UNIV
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Patent Information

Application Number
CN202511777983.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-28
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Existing gallium nitride-based power electronic systems suffer from significant reverse conduction losses and are prone to loosening at connection points between devices, leading to reduced system stability and reliability, as well as high device size and cost.

Method used

A monolithic integrated multi-channel fin gate HEMT and grooved SBD fabrication method is adopted to integrate the multi-channel fin gate HEMT and Si SBD on the same substrate. The low turn-on voltage of Si SBD is used to reduce reverse conduction loss and reduce parasitic inductance and resistance of external connections. Device design is optimized through dielectric layer and metal interconnect.

Benefits of technology

It significantly reduces reverse conduction loss, reduces device size and cost, improves system stability and reliability, reduces signal transmission delay and interference, and adapts to complex working environments.

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Abstract

The invention provides a monolithic integration multi-channel fin-shaped gate HEMT and a groove SBD and a preparation method thereof. The monolithic integration multi-channel fin-shaped gate HEMT comprises a substrate layer, a multi-channel fin-shaped gate HEMT and a groove anode SBD, the multi-channel fin-shaped gate HEMT comprises a first buffer layer, a first barrier layer, a first channel layer, a p-GaN layer, a source electrode, a drain electrode, a dielectric layer, a gate electrode and a plurality of grooves, wherein the first barrier layer and the first channel layer are stacked repeatedly. The plurality of grooves are arranged at intervals along the parallel direction from the source electrode to the drain electrode, are arranged in the middle region of the p-GaN layer at intervals, and sequentially penetrate through the p-GaN layer, the first channel layer and the first barrier layer to enter the first buffer layer; the trench anode SBD includes a second buffer layer, a second barrier layer and a second channel layer repeatedly stacked, a cathode, an anode, and an anode trench. Therefore, reverse conduction loss can be remarkably reduced, parasitic parameters are reduced, the size of the power conversion unit is reduced, the overall cost of a product is reduced, and the stability and reliability of a system are improved.
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