Silicon optical chip structure integrated with various components
By setting grooves and through holes on the silicon-based carrier plate, using metal heat-conducting pillars and thermally conductive insulating silicone grease to conduct heat, and adding a metal heat-conducting material layer and heat dissipation fins on the lower surface, the problems of long connection distance between silicon photonics chips and components and difficult heat dissipation are solved, achieving a highly efficient heat conduction and heat dissipation effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-10
- Publication Date
- 2026-03-20
AI Technical Summary
The long connection distance between silicon photonics chips and other electronic components results in large integrated devices with low efficiency and difficulty in heat dissipation during high-speed, high-power transmission.
Grooves and through holes are set on the silicon-based carrier plate layer, and heat is conducted by metal heat-conducting pillars and thermally insulating silicone grease. A metal thermally conductive material layer and heat dissipation fins are composited on the lower surface to increase the heat dissipation area.
This achieves efficient heat conduction and dissipation of silicon photonic chips and components, avoids heat accumulation, and improves the heat dissipation efficiency and reliability of integrated devices.
Smart Images
Figure CN224020036U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to silicon optical chip technical field especially, it relates to a kind of silicon optical chip structure of integrated multiple components. BACKGROUND
[0002] In prior art, silicon optical chip and other electronic components are usually connected by wire, the distance is longer, causing the size of integrated electronic device is larger, and the efficiency is lower.Silicon optical chip is prone to generate higher heat under high speed, high power transmission, how to effectively dissipate heat is one of the main problems that silicon optical chip faces in the integration process. SUMMARY
[0003] Therefore, in view of the above problems, the utility model provides a kind of silicon optical chip structure of integrated multiple components, can effectively conduct heat dissipation.
[0004] To achieve the above object, the utility model adopts the following technical scheme:
[0005] A kind of silicon optical chip structure of integrated multiple components, including silicon-based bearing plate layer;
[0006] The upper surface of the silicon-based bearing plate layer is provided with a groove, the bottom of the groove is provided with a press-welding point for welding silicon optical chip and multiple components, and a plurality of through holes penetrating the silicon-based bearing plate layer are provided in the area outside each press-welding point on the bottom of the groove;
[0007] Each through hole of the silicon-based bearing plate layer is provided with a metal heat-conducting column matched with the aperture of the through hole;
[0008] When silicon optical chip and each component are welded on each press-welding point respectively, heat-conducting insulating silicone grease is applied in the groove, and the heat-conducting insulating silicone grease is at least in contact with the surface of the metal heat-conducting column, and the bottom of each silicon optical chip and each component.
[0009] Further, the lower surface of the silicon-based bearing plate layer is compounded with a metal heat-conducting material layer, and each metal heat-conducting column is in contact with the metal heat-conducting material layer.
[0010] Further, the projection area of the metal heat-conducting material layer on the lower surface of the silicon-based bearing plate layer is greater than or equal to the area of the bottom of the groove.
[0011] Further, the multiple components include Driver chip and / or DSP chip and / or TIA chip.
[0012] Further, the silicon-based bearing plate layer is further provided with a waveguide, the waveguide is arranged on the silicon-based bearing plate layer in the area outside the groove, and the waveguide is not in contact with silicon optical chip and each component.
[0013] Further, the lower surface of the metal heat-conducting material layer extends downward to form a plurality of spaced heat dissipation fins.
[0014] By adopting the foregoing technical scheme, the present application has the following beneficial effects:
[0015] The silicon optical chip structure integrating various components has the following advantages: the recess is formed on the upper surface of the silicon base support plate layer, which facilitates the taking of the silicon optical chip and other components; and the recess facilitates the application of the heat-conducting and insulating silicone grease at the bottom of the recess. The metal heat-conducting column is arranged in the recess of the silicon base support plate layer to conduct heat. In use, the heat generated by the silicon optical chip and other components is conducted to the lower surface of the silicon base support plate layer through the heat-conducting and insulating silicone grease and the metal heat-conducting column, thereby avoiding the accumulation of the heat generated by the silicon optical chip and other components on the silicon base support plate layer.
[0016] Further, the lower surface of the metal heat-conducting material layer extends downward to form a plurality of spaced heat dissipation fins. BRIEF DESCRIPTION OF DRAWINGS
[0017] Figure 1 is a structural schematic view of the present application;
[0018] Figure 2 is a sectional view of the present application. DETAILED DESCRIPTION
[0019] The present application will be further described in combination with the drawings and specific embodiments.
[0020] Reference Figure 1 and Figure 2 The present embodiment provides a silicon optical chip structure integrating various components, which comprises a silicon base support plate layer 100 and a metal heat-conducting material layer 200 compounded on the lower surface of the silicon base support plate layer 100. The lower surface of the metal heat-conducting material layer 200 extends downward to form a plurality of spaced heat dissipation fins 201 to increase the heat dissipation area. The silicon base support plate layer 100 is a material existing in the art, which will not be described in detail here. The silicon base support plate layer 100 is made of a metal material with good heat-conducting effect, such as a copper alloy plate or an aluminum alloy plate.
[0021] The upper surface of the silicon base support plate layer 100 is provided with a recess 101. The projection area of the metal heat-conducting material layer 200 on the lower surface of the silicon base support plate layer 100 is greater than or equal to the bottom area of the recess 101. The greater the area of the metal heat-conducting material layer 200, the better the heat-conducting effect.
[0022] The bottom of the groove 101 is provided with a press welding point 103 for welding a silicon optical chip and various components, and the bottom of the groove 101 is provided with a plurality of through holes (not marked in the figure, but those skilled in the art should understand the position of the through holes according to the description and the drawings) penetrating the silicon-based carrier plate layer 100 in the area outside each press welding point 103; each through hole of the silicon-based carrier plate layer 100 is provided with a metal heat-conducting column 102 matched with the aperture of the through hole, and each metal heat-conducting column 102 is in contact with the metal heat-conducting material layer 200. The metal heat-conducting column 102 is made of a copper alloy plate or an aluminum alloy plate or other metal materials with good heat-conducting effect.
[0023] In use, when the silicon optical chip and each component (not shown in the figure) are respectively welded on each press welding point 103, a heat-conducting insulating silicone grease (not shown in the figure, but those skilled in the art should understand the position and method of applying the heat-conducting insulating silicone grease according to the description and the drawings, and the heat-conducting insulating silicone grease is a material known in the art and will not be described in detail here) is applied in the groove 101, and the heat-conducting insulating silicone grease is at least in contact with the surface of the metal heat-conducting column 102 and the bottom of each silicon optical chip and each component. Through this structure, the heat generated by the silicon optical chip and other components is conducted to the metal heat-conducting material layer 200 and the heat dissipation fins 201 on the lower surface of the silicon-based carrier plate layer 100 through the heat-conducting insulating silicone grease and the metal heat-conducting column 102, avoiding the accumulation of heat generated by the silicon optical chip and other components on the silicon-based carrier plate layer 100.
[0024] The silicon-based carrier plate layer 100 is also provided with a waveguide 104, which is arranged on the silicon-based carrier plate layer 100 in the area outside the groove 101 and does not come into contact with the silicon optical chip and each component, so that the heat generated by the silicon optical chip and each component can be greatly reduced to avoid affecting the waveguide 104 (the waveguide 104 will expand and contract due to temperature changes, affecting performance).
[0025] The various components include a Driver chip and / or a DSP chip and / or a TIA chip.
[0026] The integrated silicon optical chip structure with various components can effectively conduct and dissipate heat.
[0027] In actual setting, if the power of the silicon optical chip and each component is low, the metal heat-conducting material layer 200 and the heat dissipation fins 201 can also not be provided. Without the metal heat-conducting material layer 200 and the heat dissipation fins 201, the heat dissipation effect will be significantly reduced.
[0028] Although the utility model is specifically shown and introduced in combination with the preferred embodiments, it should be understood by those skilled in the art that various changes can be made to the utility model in form and details without departing from the spirit and scope of the utility model defined in the appended claims, and all of them are within the protection scope of the utility model.
Claims
1. A silicon photonics chip structure integrating multiple components, characterized in that: Including silicon-based carrier layers; The upper surface of the silicon-based carrier plate is provided with a groove, and the bottom of the groove is provided with a bonding point for welding silicon photonic chips and various components. The bottom of the groove, in the area outside the bonding points, is provided with multiple through holes penetrating the silicon-based carrier plate. Each of the silicon-based support plate layers has a metal heat-conducting pillar that matches the diameter of the through hole. After the silicon photonics chip and each component are respectively soldered to the corresponding bonding points, thermally conductive insulating silicone grease is applied in the groove. The thermally conductive insulating silicone grease is in contact with at least the surface of the metal heat-conducting pillar and the bottom of each silicon photonics chip and each component.
2. The silicon photonics chip structure integrating multiple components according to claim 1, characterized in that: The lower surface of the silicon-based support plate is coated with a metal thermally conductive material layer, and each of the metal thermally conductive pillars is in contact with the metal thermally conductive material layer.
3. The silicon photonics chip structure integrating multiple components according to claim 2, characterized in that: The projected area of the metal thermally conductive material layer on the lower surface of the silicon-based carrier plate layer is greater than or equal to the area of the bottom of the groove.
4. The silicon photonics chip structure integrating multiple components according to claim 1, characterized in that: The various components include driver chips and / or DSP chips and / or TIA chips.
5. A silicon photonics chip structure integrating multiple components according to claim 1, characterized in that: A waveguide is also provided on the silicon-based carrier plate layer. The waveguide is located in the area outside the groove on the silicon-based carrier plate layer, and the waveguide does not come into contact with the silicon photonic chip and other components.
6. A silicon photonics chip structure integrating multiple components according to claim 2, characterized in that: The lower surface of the metal thermally conductive material layer extends downward to form multiple spaced heat dissipation fins.