Lead frame for semiconductor

Abstract

The lead frame comprises a bottom plate, an inner connecting frame is arranged on the upper surface of the bottom plate, a semiconductor chip is placed in the inner connecting frame, a bottom plate glue injection groove is arranged on the outer vertical face of the inner connecting frame in the circumferential direction, the bottom plate is provided with a top plate in a matched mode, and an outer connecting frame matched with the inner connecting frame is arranged on the lower surface of the top plate. A top plate glue injection groove is formed in the inner vertical face of the outer connecting frame in the circumferential direction, the bottom plate glue injection groove and the top plate glue injection groove are matched to form a cavity, heat-conducting glue is injected into the cavity, glue injection channels are arranged on the two sides of the top plate, the glue injection channels are communicated with the cavity, and glue injection openings are formed in the glue injection channels and located in the upper surface of the top plate. The bottom plate glue injection groove and the top plate glue injection groove are arranged and matched to form the cavity, and the heat-conducting glue is injected into the cavity, so that the purpose of sealing connection between the top plate and the bottom plate is achieved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor equipment, especially relates to the lead frame for semiconductor. BACKGROUND

[0002] The lead frame is a key component in semiconductor packaging, mainly used for connecting internal circuits of a chip with external circuits, and providing mechanical support and heat dissipation function.

[0003] The utility model discloses a kind of lead frames for semiconductor, by being inserted into the inside of connecting frame with semiconductor chip, by making the convex strip of semiconductor chip side is inserted into auxiliary positioning of card slot, it is convenient to install, simultaneously by abutting with the top of semiconductor chip with heat conduction plate, make rectangular frame is connected in the outside of semiconductor chip, by using fixed part to be fixedly connected with connecting rod and connecting hole, by rectangular frame down pressure limits semiconductor chip, simultaneously make the sealing ring of connecting frame inner side is stressed and is attached to the outside of semiconductor chip, to improve sealing performance and heat dissipation performance. Currently in order to achieve sealing effect, lead frame bottom plate and lead frame top plate are usually fixedly connected together using fixed part, once fixed part loosens, or several fixed parts are inconsistent in tightness, it will lead to the contact surface of lead frame bottom plate and lead frame top plate produce gap, reduce the sealing performance of lead frame. UTILITY MODEL CONTENTS

[0004] The utility model discloses a kind of lead frames for semiconductor, by being inserted into the inside of connecting frame with semiconductor chip, by making the convex strip of semiconductor chip side is inserted into auxiliary positioning of card slot, it is convenient to install, simultaneously by abutting with the top of semiconductor chip with heat conduction plate, make rectangular frame is connected in the outside of semiconductor chip, by using fixed part to be fixedly connected with connecting rod and connecting hole, by rectangular frame down pressure limits semiconductor chip, simultaneously make the sealing ring of connecting frame inner side is stressed and is attached to the outside of semiconductor chip, to improve sealing performance and heat dissipation performance. Currently in order to achieve sealing effect, lead frame bottom plate and lead frame top plate are usually fixedly connected together using fixed part, once fixed part loosens, or several fixed parts are inconsistent in tightness, it will lead to the contact surface of lead frame bottom plate and lead frame top plate produce gap, reduce the sealing performance of lead frame.

[0005] The specific technical scheme of the utility model is as follows:

[0006] A kind of lead frame for semiconductor, bottom plate upper surface is equipped with inner connecting frame, semiconductor chip is placed in the inside of inner connecting frame, inner connecting frame outer facade is equipped with bottom plate glue injection groove perimetrically, bottom plate is equipped with top plate, top plate lower surface is equipped with the outer connecting frame of adaptation with inner connecting frame, outer connecting frame inner facade is equipped with top plate glue injection groove perimetrically, bottom plate glue injection groove and top plate glue injection groove cooperate to form cavity, heat-conducting glue is injected in cavity, top plate both sides are equipped with glue injection channel, glue injection channel is communicated with cavity, glue injection channel is equipped with glue injection port, glue injection port is located on top plate upper surface.

[0007] Further, inner connecting frame upper surface is equipped with first sealing convex strip, top plate lower surface is equipped with the first sealing groove of adaptation with first sealing convex strip, outer connecting frame lower surface is equipped with second sealing convex strip, bottom plate upper surface is equipped with the second sealing groove of adaptation with second sealing convex strip.

[0008] Further, the first sealing convex strip and the second sealing convex strip are made of insulating rubber.

[0009] Further, the lower surface of the top plate is provided with a heat-conducting silica gel layer, the heat-conducting silica gel layer covers the top of the semiconductor chip, the lower surface of the heat-conducting silica gel layer is attached to the upper surface of the semiconductor chip, and the upper surface of the top plate is provided with a heat dissipation channel.

[0010] Further, the heat dissipation channel array is distributed with a plurality of heat dissipation channels, and the cross section of the heat dissipation channel is circular.

[0011] Further, the bottom of the heat dissipation channel is in contact with the heat-conducting silica gel layer.

[0012] Further, the lower surface of the bottom plate is provided with a plurality of pins, and the pins are electrically connected to the semiconductor chip.

[0013] Further, the end of the pin is spherical.

[0014] Further, the two glue injection channels are oppositely arranged at the middle positions of the two sides of the top plate.

[0015] Further, the top plate is in the shape of a cube, the periphery of the top plate is provided with a chamfer, and the glue injection port is located on the inclined surface of the chamfer.

[0016] Compared with the prior art, the utility model has the following beneficial effects:

[0017] In use, the semiconductor chip is placed in the inner connecting frame, the top plate is covered, the first sealing convex strip is inserted into the first sealing groove, the second sealing convex strip is inserted into the second sealing groove, the contact between the semiconductor chip and the external environment is isolated, the attachment of the top plate and the bottom plate is positioned, then the heat-conducting glue is injected into the cavity formed by the bottom plate glue injection groove and the top plate glue injection groove through the glue injection channel, the inner connecting frame and the outer connecting frame are bonded together by the heat-conducting glue, the top plate and the bottom plate are bonded together, the contact between the external environment and the semiconductor chip is further isolated by the heat-conducting glue, and the overall sealing property of the lead frame is improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 It is a three-dimensional structure schematic view of the utility model embodiment;

[0019] Figure 2 It is an assembly explosion view of the bottom plate, the top plate and the semiconductor chip in the utility model embodiment;

[0020] Figure 3 It is Figure 2 It is a local enlarged schematic view of position A in the middle;

[0021] Figure 4 It is a sectional structure schematic view of the utility model embodiment;

[0022] Figure 5A bottom structure schematic view of the bottom plate in the embodiment of the utility model;

[0023] Figure 6 A bottom structure schematic view of the top plate in the embodiment of the utility model;

[0024] Reference signs:

[0025] 1, bottom plate; 11, inner connecting frame; 111, bottom plate glue injection groove; 112, first sealing convex strip; 12, second sealing groove;

[0026] 2, top plate; 21, outer connecting frame; 211, top plate glue injection groove; 212, second sealing convex strip; 22, glue injection channel; 221, glue injection port; 23, first sealing groove; 24, heat-conducting silica gel layer; 25, heat dissipation channel;

[0027] 3, semiconductor chip;

[0028] 4, pin;

[0029] 5, heat-conducting glue. Specific implementation:

[0030] In order to better understand the purpose, structure and function of the utility model, the technical scheme in the embodiment of the utility model will be clearly and completely described below in combination with the drawings.

[0031] Reference Figures 1 to 6 , the embodiment discloses a lead frame for semiconductor, which comprises a bottom plate 1, the upper surface of the bottom plate 1 is provided with an inner connecting frame 11, the inner connecting frame 11 is internally placed with a semiconductor chip 3, the outer vertical surface of the inner connecting frame 11 is circumferentially provided with a bottom plate glue injection groove 111, the bottom plate 1 is provided with a top plate 2, the lower surface of the top plate 2 is provided with an outer connecting frame 21 matched with the inner connecting frame 11, the inner vertical surface of the outer connecting frame 21 is circumferentially provided with a top plate glue injection groove 211, the bottom plate glue injection groove 111 and the top plate glue injection groove 211 cooperate to form a cavity, the cavity is filled with heat-conducting glue 5, the two sides of the top plate 2 are provided with glue injection channels 22, the glue injection channels 22 are communicated with the cavity, the glue injection channels 22 are provided with glue injection ports 221, the glue injection ports 221 are located on the upper surface of the top plate 2, the heat-conducting glue 5 is injected into the cavity formed by the bottom plate glue injection groove 111 and the top plate glue injection groove 211 through the glue injection channels 22, the heat-conducting glue 5 bonds the inner connecting frame 11 and the outer connecting frame 21 together, thereby bonding the top plate 2 and the bottom plate 1 together, and the heat-conducting glue 5 can further isolate the external environment from contacting the semiconductor chip 3, thereby improving the overall sealing performance of the lead frame, two glue injection channels 22 are arranged, the heat-conducting glue 5 is injected through one of the glue injection channels 22, when the cavity is filled with the heat-conducting glue 5, the heat-conducting glue 5 will overflow from the other glue injection channel 22, which is convenient for an operator to judge whether the cavity is filled with the heat-conducting glue 5 or not, and when one of the glue injection channels 22 injects the heat-conducting glue 5, the other one will exhaust, so that the heat-conducting glue 5 can enter the cavity more smoothly.

[0032] The inner connecting frame 11 is provided with a first sealing protrusion 112 on the upper surface, the top plate 2 is provided with a first sealing groove 23 matched with the first sealing protrusion 112 on the lower surface, the outer connecting frame 21 is provided with a second sealing protrusion 212 on the lower surface, and the bottom plate 1 is provided with a second sealing groove 12 matched with the second sealing protrusion 212 on the upper surface, thereby preventing the semiconductor chip 3 from contacting the external environment and positioning the top plate 2 and the bottom plate 1.

[0033] The first sealing protrusion 112 and the second sealing protrusion 212 are made of insulating rubber, which has good elasticity, wear resistance and tear resistance.

[0034] The top plate 2 is provided with a heat-conducting silica gel layer 24 on the lower surface, which covers the top of the semiconductor chip 3, and the lower surface of the heat-conducting silica gel layer 24 is attached to the upper surface of the semiconductor chip 3. The heat-conducting silica gel layer 24 can effectively transfer heat, reduce equipment temperature, has good electrical insulation performance, is soft and compressible, can fill the small gap between the top plate 2 and the semiconductor chip 3, and ensure that the top plate 2 and the semiconductor chip 3 can be in good contact. The top plate 2 is provided with a heat dissipation channel 25 on the upper surface, which increases the heat dissipation area and improves the heat dissipation effect.

[0035] The heat dissipation channel 25 is arranged in an array and has a circular cross section. The circular cross section makes the heat distribution more uniform and avoids local overheating. The gas flow resistance in the circular channel is small, the heat dissipation efficiency is higher, and the circular structure can better withstand internal and external pressure, reduce deformation and damage of the top plate 2. The bottom of the heat dissipation channel 25 is in contact with the heat-conducting silica gel layer 24, which can effectively transfer the heat on the heat-conducting silica gel layer 24.

[0036] The bottom plate 1 is provided with a plurality of pins 4 on the lower surface, which are electrically connected to the semiconductor chip 3. The pins 4 have a spherical end, which is a BGA packaging type, and can meet the demand of more I / O ports and expand more functions.

[0037] The two glue injection channels 22 are oppositely arranged at the middle positions of the two sides of the top plate 2, which can make the heat-conducting glue 5 more evenly fill the cavity.

[0038] The top plate 2 is in the shape of a cube, and the top plate 2 is provided with a chamfer around the edge. The glue injection port 221 is located on the chamfered slope, which can prevent the heat-conducting glue 5 from overflowing from the glue injection channel 22 and not being cleaned, thereby affecting the flatness of the top of the lead frame and the assembly of the lead frame in the later stage.

[0039] Working principle: when using, the semiconductor chip 3 is placed in the inner connecting frame 11, the top plate 2 is covered, the first sealing convex strip 112 is inserted into the first sealing groove 23, the second sealing convex strip 212 is inserted into the second sealing groove 12, the contact of the semiconductor chip 3 and the external environment is isolated, the top plate 2 and the bottom plate 1 can be positioned, then the heat-conducting glue 5 is injected into the cavity formed by the bottom plate glue injection groove 111 and the top plate glue injection groove 211 through the glue injection channel 22, the heat-conducting glue 5 bonds the inner connecting frame 11 and the outer connecting frame 21 together, then the top plate 2 and the bottom plate 1 are bonded together, and the heat-conducting glue 5 can further isolate the contact of the external environment and the semiconductor chip 3, and the overall sealing property of the lead frame is improved.

[0040] The above merely describes a preferred embodiment of the present application, but the protection scope of the present application is not limited to this. Any skilled person in the art, according to the technical scheme and concept of the present application, can make equivalent replacement or change within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A lead frame for a semiconductor, characterized by: The utility model provides a semiconductor chip heat dissipation structure, including bottom plate (1), bottom plate (1) upper surface is equipped with inner connecting frame (11), and the inside of inner connecting frame (11) is placed with semiconductor chip (3), and the outer vertical surface of inner connecting frame (11) is equipped with bottom plate glue injection groove (111), and bottom plate (1) is equipped with top plate (2), and top plate (2) lower surface is equipped with the outer connecting frame (21) of adaptation with inner connecting frame (11), and the inner vertical surface of outer connecting frame (21) is equipped with top plate glue injection groove (211), and bottom plate glue injection groove (111) and top plate glue injection groove (211) cooperate and form cavity, and cavity is injected with heat conducting glue (5), and top plate (2) both sides are equipped with glue injection channel (22), and glue injection channel (22) is through with cavity, and glue injection channel (22) is equipped with glue injection port (221), and glue injection port (221) is located top plate (2) upper surface.

2. The lead frame for a semiconductor according to claim 1, characterized by The upper surface of the inner connecting frame (11) is provided with a first sealing protrusion (112), and the lower surface of the top plate (2) is provided with a first sealing groove (23) matched with the first sealing protrusion (112). The lower surface of the outer connecting frame (21) is provided with a second sealing protrusion (212), and the upper surface of the bottom plate (1) is provided with a second sealing groove (12) matched with the second sealing protrusion (212).

3. The lead frame for a semiconductor according to claim 2, characterized by The first sealing protrusion (112) and the second sealing protrusion (212) are made of insulating rubber.

4. The lead frame for a semiconductor according to claim 1, characterized by The lower surface of the top plate (2) is provided with a heat-conducting silicone layer (24) covering the top of the semiconductor chip (3), and the lower surface of the heat-conducting silicone layer (24) is attached to the upper surface of the semiconductor chip (3). The upper surface of the top plate (2) is provided with a heat dissipation channel (25).

5. The lead frame for a semiconductor according to claim 4, wherein The heat dissipation channel (25) is arrayed with a plurality of heat dissipation channels, and the cross section of the heat dissipation channel (25) is circular.

6. The lead frame for a semiconductor according to claim 5, wherein The bottom of the heat dissipation channel (25) is in contact with the heat-conducting silicone layer (24).

7. The lead frame for a semiconductor according to claim 1, wherein The lower surface of the bottom plate (1) is provided with a plurality of pins (4) electrically connected to the semiconductor chip (3).

8. The lead frame for a semiconductor according to claim 7, characterized by The end of the pin (4) is spherical.

9. The lead frame for a semiconductor according to claim 1, characterized by Two glue injection channels (22) are oppositely arranged at the middle positions of the two sides of the top plate (2).

10. The lead frame for a semiconductor according to claim 8, wherein The top plate (2) is a cube, and the four edges of the top plate (2) are provided with chamfers, and the glue injection port (221) is located on the chamfered surface.

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