Static var generator with heat dissipation function

By setting up independent air ducts and heat sinks in the static var generator, the problem of poor heat dissipation of MOSFETs was solved, achieving efficient heat dissipation and improving the stability and reliability of the system.

CN224069003UActive Publication Date: 2026-03-31BEIJING IN POWER ELECTRIC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-01
Publication Date
2026-03-31

AI Technical Summary

Technical Problem

In existing static var generators, the heat dissipation of MOSFETs is poor, and they are easily interfered with by other heat-generating components, affecting their performance and lifespan.

Method used

An air duct housing is installed inside the static var generator housing. The air duct housing and the bottom surface of the inner cavity of the housing form an independent air duct. The MOSFET is located inside the air duct housing, and the fan faces the air duct housing. Combined with components such as heat sinks and ceramic pads, efficient heat dissipation of the MOSFET is achieved.

Benefits of technology

It effectively isolates the MOSFET from interference with other heat-generating components, improves the heat dissipation of the MOSFET, ensures that it operates within a suitable temperature range, and enhances the stability and reliability of the circuit system.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a static var generator with a heat dissipation function, which belongs to the technical field of power electronic equipment and comprises a shell, a support plate, a fan, an air duct shell and an MOS (metal oxide semiconductor) tube. The supporting plate is fixed in the shell, and the fan is fixedly mounted on the supporting plate; the air duct shell is a U-shaped piece, the air duct shell and the bottom face of an inner cavity of the outer shell form an independent air duct, the air inlet end of the air duct shell is connected with the supporting plate, and the MOS tube is located in the air duct shell. According to the static var generator with the heat dissipation function, the air channel shell is installed in the outer shell, the air channel shell and the bottom face of the inner cavity of the outer shell form an independent air channel, the MOS tube is located in the air channel shell, the draught fan is right opposite to the air channel shell, the MOS tube is physically isolated from other heating elements through the air channel shell, and therefore heat dissipation is achieved. The interference of other heating elements on the MOS tube is greatly reduced, and the fan directly dissipates heat of the MOS tube, so that the heat dissipation effect of the MOS tube is improved.
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Description

Technical Field

[0001] This utility model belongs to the field of power electronic equipment technology, and more specifically, it relates to a static var generator with heat dissipation function. Background Technology

[0002] A Static Var Generator (SVG) is a dynamic reactive power compensation device based on power electronics technology. It connects to the power grid via a self-commutated bridge circuit to adjust the phase and amplitude of the AC output voltage, or directly control the AC current, to dynamically absorb or generate reactive power, thereby improving the power factor of the power grid, stabilizing voltage, and suppressing harmonics. Its core consists of power devices such as MOSFETs, possessing fast response and bidirectional continuous adjustment capabilities. MOSFETs are typically installed inside a housing. During operation, MOSFETs generate heat, which can lead to performance degradation or even damage. Therefore, a fan needs to be installed at the air inlet of the housing to dissipate heat from the MOSFETs. Conventional air cooling relies on the overall airflow within the housing, making the MOSFETs susceptible to interference from other heat-generating components, thus affecting their heat dissipation efficiency. Utility Model Content

[0003] The purpose of this invention is to provide a static var generator with heat dissipation function, which aims to solve the problem of poor heat dissipation of MOSFETs in existing static var generators.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is as follows: a static var generator with heat dissipation function is provided, comprising: a shell, a support plate, a fan, a duct shell, and a MOSFET; the support plate is fixed inside the shell, and the fan is fixedly mounted on the support plate; the duct shell is a U-shaped component, and the duct shell and the bottom surface of the inner cavity of the shell form an independent duct, the air inlet end of the duct shell is connected to the support plate, the fan faces the independent duct, and the MOSFET is located inside the duct shell.

[0005] In one possible implementation, a radiator is also installed inside the air duct housing.

[0006] In one possible implementation, the MOS transistor is fixedly mounted on the heat sink.

[0007] In one possible implementation, the heat sink includes a heat sink substrate and heat sink fins, the heat sink fins being disposed on the two side walls of the heat sink substrate, and the MOS transistor being located below the heat sink fins.

[0008] In one possible implementation, a ceramic pad is installed between the MOS transistor and the heat dissipation substrate.

[0009] In one possible implementation, the MOS transistor and the ceramic pad are bonded together using thermally conductive silicone putty.

[0010] In one possible implementation, a capacitor board is also included, with the heat dissipation substrate mounted on the capacitor board.

[0011] In one possible implementation, the bottom of the heat dissipation substrate is provided with pins that are connected to the capacitor plate, and an insulating plate is installed between the heat dissipation substrate and the capacitor plate, and the insulating plate is provided with positioning through holes that match the pins.

[0012] In one possible implementation, a support plate is detachably mounted on the sidewall of the heat dissipation substrate, and multiple MOS transistors are mounted on the support plate.

[0013] In one possible implementation, the support plate has heat dissipation holes facing the fan.

[0014] Compared with the prior art, the static var generator with heat dissipation function of this utility model, as shown in the embodiments of this application, has an air duct shell installed inside the outer shell. The air duct shell and the bottom surface of the inner cavity of the outer shell form an independent air duct. The MOSFET is located inside the air duct shell and the fan is directly facing the air duct shell. The air duct shell physically isolates the MOSFET from other heat-generating components, greatly reducing the interference of other heat-generating components on the MOSFET. Furthermore, the fan directly dissipates heat from the MOSFET, thereby improving the heat dissipation effect of the MOSFET. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A three-dimensional structural diagram of a static var generator with heat dissipation function provided for an embodiment of this utility model;

[0017] Figure 2 A three-dimensional structural diagram of a static var generator with heat dissipation function (with the outer casing hidden) provided for an embodiment of this utility model;

[0018] Figure 3 A schematic diagram of the assembly structure of the heat sink and MOSFET provided in an embodiment of this utility model;

[0019] Figure 4Explosion of the heat sink and MOSFET provided in the embodiments of this utility model Figure 1 ;

[0020] Figure 5 Explosion of the heat sink and MOSFET provided in the embodiments of this utility model Figure 2 .

[0021] In the diagram: 101, outer casing; 102, support plate; 103, fan; 104, air duct casing; 105, MOSFET; 106, heat sink; 107, heat dissipation substrate; 108, heat dissipation fins; 109, ceramic pad; 110, capacitor plate; 111, pin; 112, insulating plate; 113, positioning through hole; 114, support plate; 115, heat dissipation hole; 116, mounting groove; 117, flexible limiting ring; 118, annular limiting groove. Detailed Implementation

[0022] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0023] Please refer to the following: Figures 1 to 3 The present invention provides a static var generator with heat dissipation function. The static var generator with heat dissipation function includes: a housing 101, a support plate 102, a fan 103, a duct housing 104, and a MOSFET 105; the support plate 102 is fixed inside the housing, and the fan 103 is fixedly mounted on the support plate 102; the duct housing 104 is a U-shaped component, and the duct housing 104 and the bottom surface of the inner cavity of the housing 101 form an independent duct; the air inlet end of the duct housing 104 is connected to the support plate 102; the fan 103 faces the independent duct; and the MOSFET 105 is located inside the duct housing 104.

[0024] This embodiment provides a static var generator with heat dissipation function. Compared with the prior art, a duct housing 104 is installed inside the outer casing 101. The duct housing 104 and the bottom surface of the inner cavity of the outer casing 101 form an independent air duct. The MOSFET 105 is located inside the duct housing 104 and the fan 103 is directly facing the duct housing 104. The duct housing 104 physically isolates the MOSFET 105 from other heat-generating components, greatly reducing the interference of other heat-generating components to the MOSFET 105. Furthermore, the fan 103 directly dissipates heat from the MOSFET 105, thereby improving the heat dissipation effect of the MOSFET 105.

[0025] In some embodiments, please refer to Figures 1 to 3A heat sink 106 is also installed inside the air duct housing 104. In this embodiment, the heat sink 106 can improve the heat dissipation effect on the MOSFET 105.

[0026] The combined structure of the air duct housing 104 and the heat sink 106 provides a strong guarantee for the stable operation of the MOSFET 105. In practical applications, the MOSFET 105 generates a large amount of heat during operation. If heat dissipation is not timely, it will affect its performance and even shorten its service life. The heat sink 106 inside the air duct housing 104 can quickly conduct away the heat generated by the MOSFET 105 through an efficient heat dissipation mechanism. The heat sink fins of the heat sink 106 are ingeniously designed to increase the contact area with the air, allowing heat to be carried away more quickly when air flows in the air duct. At the same time, the structure of the air duct housing 104 also helps to guide the airflow to the heat sink 106. The two complement each other, ensuring that the MOSFET 105 is always within a suitable operating temperature range, further improving the stability and reliability of the entire circuit system and reducing the risk of failure due to excessive temperature.

[0027] In some embodiments, please refer to Figure 3 The MOSFET 105 is fixedly mounted on the heat sink 106. In this embodiment, since the MOSFET 105 is directly fixed on the heat sink substrate 107, the heat of the MOSFET 105 can be quickly conducted to the heat sink substrate 107, thereby rapidly cooling the MOSFET 105.

[0028] In some embodiments, please refer to Figure 3 The heat sink 106 includes a heat sink substrate 107 and heat sink fins 108. The heat sink fins 108 are respectively disposed on the two side walls of the heat sink substrate 107, and the MOSFET 105 is located below the heat sink fins 108. In this embodiment, the heat sink substrate 107 is elongated, and the length direction of the heat sink substrate 107 is consistent with the airflow direction. The heat sink fins 108 are disposed on the two long side walls of the heat sink substrate 107. The heat sink fins 108 are located in the upper half of the heat sink substrate 107, while the MOSFET 105 is fixedly mounted on the heat sink substrate 107 and located in the lower half of the heat sink substrate 107, so the MOSFET 105 is located below the heat sink fins 108. The MOSFET 105 can be fixedly connected to the heat sink substrate 107 by screws or adhesive.

[0029] The heat dissipation substrate 107 is made of a high thermal conductivity material, such as aluminum alloy, which can efficiently dissipate the heat transferred from the MOSFET 105. A special heat dissipation fin structure 108 is also designed on the surface of the heat dissipation substrate 107, which greatly increases the contact area between the heat dissipation substrate 107 and the air. When the MOSFET 105 generates heat during operation, the heat is rapidly transferred to the heat dissipation substrate 107, and then exchanged with the surrounding air through the heat dissipation fins 108, further accelerating the heat dissipation rate and ensuring that the MOSFET 105 always operates at a suitable temperature, thereby improving the stability and reliability of the entire circuit system.

[0030] In some embodiments, please refer to Figure 3 and Figure 5 A ceramic pad 109 is installed between the MOSFET 105 and the heat sink substrate 107. In this embodiment, the outer contour of the ceramic pad 109 is greater than or equal to the outer contour of the MOSFET 105, thus preventing direct contact between the MOSFET 105 and the heat sink substrate 107. Furthermore, the ceramic pad 109 has good thermal conductivity, allowing the heat generated by the MOSFET 105 to be conducted to the heat sink substrate 107 through the ceramic pad 109.

[0031] Meanwhile, the ceramic pad 109 also provides insulation. In the circuit system, the MOSFET 105 may be affected by various complex electrical environments during operation. Because the ceramic pad 109 isolates the MOSFET 105 from the heat sink 107, it effectively prevents electrical faults such as leakage or short circuits that could occur due to direct contact between the two. This not only ensures the normal operation of the MOSFET 105 but also improves the stability and safety of the entire circuit system. Furthermore, the installation process of the ceramic pad 109 is relatively simple, requiring no special tools or complex procedures. This allows for efficient assembly of the MOSFET 105 and the heat sink 107 in mass production, further reducing production costs and time.

[0032] In some embodiments, the MOSFET 105 and the ceramic pad 109 are bonded together using thermally conductive silicone putty. In this embodiment, the MOSFET 105 and the ceramic pad 109 are connected by adhesive bonding, eliminating the need for connectors and reducing the number of components. The thermally conductive silicone putty bonds the MOSFET 105 and the ceramic pad 109 together, forming a single unit that facilitates assembly onto the heat dissipation substrate 107. The thermally conductive silicone putty not only has good adhesion, ensuring the connection strength between the MOSFET 105 and the ceramic pad 109, but also good thermal conductivity, thus ensuring heat transfer.

[0033] Furthermore, the thermal conductivity of the thermally conductive silicone putty effectively prevents the performance degradation of the MOSFET 105 caused by heat accumulation. In practical applications, when the MOSFET 105 generates heat during operation, the heat can be quickly transferred to the ceramic pad 109 through the thermally conductive silicone putty. The ceramic pad 109, due to its own heat dissipation capacity, further dissipates the heat. Simultaneously, because the ceramic pad 109 has good contact with the heat sink 107, the heat can be smoothly conducted to the heat sink 107, ultimately achieving a highly efficient heat dissipation process. This method of bonding the MOSFET 105 and the ceramic pad 109 to the heat sink 107 using thermally conductive silicone putty ensures structural stability while significantly improving heat dissipation efficiency, providing a strong guarantee for the stable operation of the entire electronic device.

[0034] In some embodiments, please refer to Figures 1 to 3 It also includes a capacitor plate 110, and a heat dissipation substrate 107 is mounted on the capacitor plate 110. In this embodiment, the capacitor plate 110 is used to store and provide electrical energy. By mounting the heat dissipation substrate 107 on the capacitor plate 110, the structure inside the housing 101 is made more compact, and the heat generated by the capacitor plate 110 is conducted to the heat dissipation substrate 107, thereby achieving heat dissipation of the capacitor plate 110.

[0035] The heat dissipation substrate 107 is made of a material with high thermal conductivity, such as copper or aluminum. These materials have excellent thermal conductivity, enabling them to quickly dissipate the heat transferred from the capacitor plate 110. Several heat dissipation fins 108 are also provided on the surface of the heat dissipation substrate 107. These fins 108 increase the contact area between the heat dissipation substrate 107 and the air, allowing heat to dissipate more quickly into the surrounding environment when airflow is present. To further improve heat dissipation efficiency, ventilation holes are provided on the outer casing 101 at positions corresponding to the heat dissipation fins 108. This allows cool air from outside to enter the casing 101, carrying away heat from the heat dissipation fins 108, while hot air can also be smoothly exhausted. Furthermore, the capacitor plate 110 and the heat dissipation substrate 107 are connected using thermally conductive silicone. This silicone not only fills the tiny gaps between them but also effectively improves heat conduction efficiency, ensuring that the heat generated by the capacitor plate 110 during operation is transferred and dissipated by the heat dissipation substrate 107 in a timely and efficient manner, thereby ensuring the stable operation of the entire device.

[0036] In some embodiments, please refer to Figure 4 and Figure 5The bottom of the heat dissipation substrate 107 is provided with pins 111 that connect to the capacitor plate 110. An insulating plate 112 is installed between the heat dissipation substrate 107 and the capacitor plate 110. The insulating plate 112 has positioning through holes 113 that match the pins 111. In this embodiment, the pins 111 are used to fix the heat dissipation substrate 107 to the capacitor plate 110. The pins 111 are usually made of metal and have a certain strength and toughness, which can withstand the weight of the heat sink 106 and the vibration generated during the operation of the device. The insulating plate 112 is located between the heat dissipation substrate 107 and the capacitor plate 110. The insulating plate 112 not only isolates the direct electrical connection between the heat sink 106 and the capacitor plate 110, but also prevents external electromagnetic interference from being conducted to the capacitor plate 110 through the heat sink 106, avoiding interference with the normal charging and discharging process of the capacitor plate 110, protecting the capacitor plate 110 and related circuit components from the influence of electrical interference, ensuring that the signal transmission and processing of the device are not interfered with, and maintaining the stable performance of the device. The positioning through-hole 113 matches the pin 111, enabling the heat sink 107 to quickly find the correct mounting position. After the pin 111 passes through the positioning through-hole 113, it is fixed to the capacitor plate 110 by soldering.

[0037] In actual production, to ensure that pin 111 can pass smoothly through the positioning through hole 113, high precision is required for the machining of the positioning through hole 113. The error in its diameter needs to be controlled within an extremely small range, typically achieved using high-precision drilling equipment. Simultaneously, before installing pin 111, surface treatments such as cleaning and polishing are performed on pin 111 to remove surface oxides and impurities, ensuring the welding quality between pin 111 and capacitor board 110.

[0038] Specific welding equipment and materials are required during the welding process. Tin-lead alloy is generally chosen as the welding material due to its good conductivity and welding performance. During welding, the temperature and time must be strictly controlled. Excessive temperature may cause deformation of pin 111 or damage to the insulating plate 112, while excessive time may affect the weld's strength.

[0039] Furthermore, to further improve the stability of the connection between the heat sink 107 and the capacitor plate 110, a connection strength test is conducted after soldering. Test methods include tensile testing, which determines whether the connection between pin 111 and capacitor plate 110 can withstand various stresses during device operation. If insufficient connection strength is found during testing, the solder joints will be promptly inspected and repaired to ensure the reliability of the entire connection structure, thereby guaranteeing the stable operation of the overall device performance.

[0040] In some embodiments, please refer to Figures 3 to 5A support plate 114 is detachably mounted on the side wall of the heat dissipation substrate 107, and multiple MOSFETs 105 are mounted on the support plate 114. In this embodiment, the support plate 114 is detachably mounted on the side wall of the heat dissipation substrate 107. The support plate 114 is a rectangular plate, and its length direction is consistent with the length direction of the heat dissipation substrate 107. Multiple MOSFETs 105 are mounted on the support plate 114, which facilitates the assembly of the MOSFETs 105.

[0041] Since the MOSFET 105 is mounted on the support plate 114, the stable support plate 114 can effectively prevent the MOSFET 105 from loosening or being damaged due to external factors such as vibration. Furthermore, the rectangular shape of the support plate 114 also helps to rationally arrange the mounting positions of the MOSFET 105. On the support plate 114, multiple MOSFETs 105 are arranged in an orderly manner at a certain spacing, maintaining an appropriate distance between each MOSFET 105. This facilitates heat dissipation of the MOSFETs 105, avoids mutual heat interference between adjacent MOSFETs 105, thereby improving the overall heat dissipation efficiency of the device and ensuring stable operation of the equipment.

[0042] In some embodiments, please refer to Figures 3 to 5 The support plate 114 has heat dissipation holes 115, which face the fan 103. In this embodiment, there are multiple heat dissipation holes 115, which are evenly distributed on the support plate 114. The heat dissipation holes 115 are arranged along the length of the support plate 114, that is, the openings of the heat dissipation holes 115 face the fan 103. Airflow passing through the heat dissipation holes 115 can quickly remove the heat generated by the MOSFET 105, thus improving the heat dissipation effect of the MOSFET 105.

[0043] Meanwhile, to further improve heat dissipation efficiency, the support plate 114 is made of a metal material with good thermal conductivity, such as aluminum alloy. Aluminum alloy not only has excellent thermal conductivity but is also lightweight and high-strength, ensuring the structural stability of the support plate 114 while better conducting heat from the MOSFET 105 to the vicinity of the heat dissipation holes 115. A heat-dissipating coating is also applied to the surface of the support plate 114, further enhancing heat dissipation. Special components in the heat-dissipating coating accelerate heat dissipation through radiation when heat is conducted in, complementing the heat dissipation holes 115 where airflow carries away heat. Furthermore, the speed of the fan 103 can be intelligently adjusted according to the temperature of the MOSFET 105. When the MOSFET 105 temperature is low, the fan 103 operates at a lower speed to reduce energy consumption; when the MOSFET 105 temperature rises, the temperature sensor detects the temperature change and transmits the signal to the controller, which then controls the fan 103 to increase its speed, thereby accelerating airflow and more quickly removing heat, ensuring that the MOSFET 105 always operates within a suitable temperature range.

[0044] In some embodiments, please refer to Figure 4 and Figure 5 The heat dissipation substrate 107 has a mounting groove 116 on its side wall for mounting the support plate 114, and the outer contour of the mounting groove 116 matches the outer contour of the support plate 114. A flexible limiting ring 117 is fitted and fixed on the outer periphery of the heat dissipation substrate 107, and an annular limiting groove 118 is correspondingly provided on the side wall of the mounting groove 116 to engage with the flexible limiting ring 117.

[0045] After the support plate 114 is inserted into the mounting groove 116, its end fits against the bottom of the mounting groove 116, and the sidewall of the support plate 114 is in close contact with the sidewall of the mounting groove 116. Because the outer contour of the mounting groove 116 matches the outer contour of the support plate 114, the support plate 114 can maintain a stable position within the mounting groove 116. The flexible limiting ring 117 further enhances the stability of the structure. After the support plate 114 is installed in place, the flexible limiting ring 117 engages with the annular limiting groove 118, effectively preventing lateral displacement of the support plate 114 during use. Simultaneously, the flexible limiting ring 117 also provides a certain buffering effect, reducing the impact on the connection structure between the support plate 114 and the heat dissipation substrate 107 when subjected to slight external vibrations or impacts, thereby ensuring the normal operation of the entire heat dissipation system. During the heat dissipation process, the heat generated by the heat dissipation substrate 107 can be conducted through the support plate 114. Since the two are closely attached, the heat conduction efficiency is high, which helps to dissipate the heat in time and prevent the heat dissipation substrate 107 from overheating and affecting its performance.

[0046] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A static var generator having a heat dissipation function, comprising: The shell, the support plate, the fan, the air duct shell and the MOS tube; the support plate is fixed in the shell, the fan is fixedly installed on the support plate; the air duct shell is a U-shaped piece, the air duct shell and the inner cavity bottom surface of the shell constitute an independent air duct, the air inlet end of the air duct shell is connected with the support plate, the fan is opposite to the independent air duct, and the MOS tube is located in the air duct shell.

2. The static var generator with heat radiation function as claimed in claim 1, wherein The inside of the air duct shell is further provided with a radiator.

3. The static var generator with heat radiation function as claimed in claim 2, wherein the heat sink is made of a material having a high thermal conductivity. The MOS tube is fixedly installed on the radiator.

4. The static var generator with heat radiation function as claimed in claim 3, wherein the heat sink is made of a material having a high thermal conductivity. The radiator comprises a radiating base plate and radiating fins, the radiating fins are respectively arranged on the two side walls of the radiating base plate, and the MOS tube is located below the radiating fins.

5. A static var generator with heat radiation function as claimed in claim 4, wherein A ceramic gasket is arranged between the MOS tube and the radiating base plate.

6. A static var generator with heat radiation function as claimed in claim 5, wherein The MOS tube and the ceramic gasket are fixedly bonded by heat-conducting silica gel.

7. The static var generator with heat radiation function as claimed in claim 4, wherein the heat sink is made of a material having a high thermal conductivity. Further comprising a capacitor plate, and the radiating base plate is installed on the capacitor plate.

8. A static var generator with heat radiation function as claimed in claim 7, wherein The bottom of the radiating base plate is provided with a pin connected with the capacitor plate, an insulating plate is arranged between the radiating base plate and the capacitor plate, and a positioning through hole matched with the pin is formed in the insulating plate.

9. The static var generator with heat radiation function as claimed in claim 4, wherein A supporting plate is detachably installed on the side wall of the radiating base plate, and a plurality of MOS tubes are installed on the supporting plate.

10. A static var generator with heat radiation function as claimed in claim 9, wherein A radiating hole is formed in the supporting plate, and the radiating hole is opposite to the fan.