Packaging structure of gallium nitride-based core
Through innovative design of the base, heat sink, clamping frame, thermal pad, and electrode assembly, the problems of low heat dissipation efficiency, thermal stress concentration, and unstable electrical connection in gallium nitride-based chip packaging structures have been solved, resulting in a packaging structure that is highly efficient in heat dissipation, structurally stable, and easy to assemble and maintain.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2026-03-31
AI Technical Summary
Existing gallium nitride-based chip packaging structures suffer from problems such as low heat dissipation efficiency, concentrated thermal stress, unstable electrical connections, and complex structures that are difficult to assemble and maintain.
The design incorporates a base, heat sink, clamping frame, thermal pad, and electrode assembly. The base is made of aluminum alloy, the heat sink is made of copper and features a grid-like microgroove and heat dissipation pillars, the clamping frame is made of ceramic and features positioning protrusions and positioning grooves, the thermal pad is made of thermally conductive silicone with a high thermal conductivity, and the electrode pins feature an L-shaped design and are connected by metal wires.
A gallium nitride-based core packaging structure with efficient heat dissipation, structural stability, reliable electrical connection, and easy assembly and maintenance has been achieved, which significantly improves heat dissipation efficiency and service life, and enhances mechanical stability and electrical connection reliability.
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Figure CN224069088U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of semiconductor chip packaging technology, and more specifically, relates to a packaging structure for a gallium nitride-based chip. Background Technology
[0002] With the development of electronic technology, gallium nitride (GaN)-based chips have been widely used in power electronics, radio frequency communication, and optoelectronic displays due to their excellent characteristics such as high power density, high switching frequency, and low on-resistance. However, GaN-based chips generate a large amount of heat during operation, and inadequate heat dissipation can lead to performance degradation or even damage. Existing GaN-based chip packaging structures mainly employ direct mounting on metal substrates or ceramic substrate packaging. These methods suffer from problems such as low heat dissipation efficiency, thermal stress concentration, and unstable electrical connections. While direct mounting on metal substrates offers good thermal conductivity, its poor insulation can easily lead to short circuits. Ceramic substrate packaging provides good insulation, but its low thermal conductivity makes it difficult to meet the heat dissipation requirements of high-power-density chips. Furthermore, existing packaging structures are complex, demanding in assembly processes, and difficult to maintain, increasing production and usage costs. In addition, the connection between electrode pins and the chip in existing packaging structures also suffers from insufficient reliability, easily breaking or loosening under temperature changes and mechanical vibration, affecting the normal operation of the GaN-based chip. Utility Model Content
[0003] In view of this, the present invention provides a packaging structure for a gallium nitride-based chip, which can solve the problems of low heat dissipation efficiency, concentrated thermal stress, unstable electrical connection and complex structure that are difficult to assemble and maintain in existing packaging structures.
[0004] This utility model is implemented as follows:
[0005] This invention provides a packaging structure for a gallium nitride (GaN)-based chip, comprising a base, a heat sink, a clamping frame, a thermal pad, and an electrode assembly. The base is rectangular, with a mounting groove in the central area of its upper surface. A base plate is formed between the bottom of the mounting groove and the lower surface of the base. The heat sink is fixedly mounted on the bottom of the mounting groove. The clamping frame is rectangular and annular, with its inner wall abutting against the side wall of the mounting groove. The thermal pad is placed inside the clamping frame and abuts against the upper surface of the heat sink. The electrode assembly includes at least four electrode pins, one end of which is embedded in the side wall of the base and electrically connected to the edge of the thermal pad, while the other end extends to the outside of the base. The upper surface of the heat sink has multiple heat dissipation pillars that pass through the thermal pad and abut against the lower surface of the clamping frame. The upper surface of the clamping frame has four corner fixing holes with fixing bolts inserted into them. One end of each fixing bolt is threaded to the upper surface of the base to fix the clamping frame to the base.
[0006] The technical advantages of the gallium nitride (GaN)-based chip packaging structure provided by this utility model are as follows: By setting up a base, heat sink, clamping frame, thermal pad, and electrode assembly, a compact GaN-based chip packaging structure with high heat dissipation efficiency is formed; the abutment design between the clamping frame and the side wall of the mounting slot ensures the stability of the packaging structure; the abutment between the heat sink column passing through the thermal pad and the lower surface of the clamping frame enhances the heat conduction efficiency; the arrangement of the electrode pins ensures the reliability of the electrical connection; and the connection method of fixing bolts passing through the clamping frame and the base facilitates the assembly and maintenance of the entire packaging structure, improving the practicality and reliability of the packaging structure.
[0007] Based on the above technical solution, the packaging structure of the gallium nitride-based chip of this utility model can be further improved as follows:
[0008] The base is made of aluminum alloy, and there are mounting feet at the four corners of the bottom of the base. The mounting feet have through holes for fixing the base to external equipment. The depth of the mounting groove is 1 / 4 to 1 / 2 of the height of the base. There are stepped structures on the four inner side walls of the mounting groove, and the bottom of the outer side wall of the clamping frame abuts against the upper surface of the stepped structure.
[0009] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by using a base made of aluminum alloy, it has good thermal conductivity and mechanical strength, while having a low density, which makes it easy to reduce the overall weight; by setting mounting feet at the bottom of the base, it is easy to fix the packaging structure to external equipment, which improves the convenience and stability of installation; by designing the depth of the mounting groove and the stepped structure on the side wall, the clamping frame can be firmly installed on the base, which improves the mechanical strength and sealing performance of the packaging structure.
[0010] Furthermore, the heat sink is made of copper, and its thickness is 1 / 5 to 1 / 4 of the depth of the mounting groove; the upper surface of the heat sink is provided with a grid-like microgroove, the depth of which is □ to 1 / 8 of the thickness of the heat sink; the heat dissipation pillars are evenly distributed along the edge of the upper surface of the heat sink, and the height of the heat dissipation pillars is 80% to 90% of the thickness of the clamping frame.
[0011] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by using a copper heat sink, the high thermal conductivity of copper is utilized to accelerate the conduction and dissipation of heat; the grid-like microgrooves set on the upper surface of the heat sink increase the heat dissipation area and improve the heat dissipation efficiency; by making the heat dissipation pillars evenly distributed along the edge of the heat sink, not only are the heat conduction channels increased, but mechanical support is also provided. The height design of the heat dissipation pillars allows them to fit tightly with the clamping frame, ensuring that heat can be effectively conducted to the outside of the packaging structure and improving the heat dissipation efficiency.
[0012] Furthermore, the clamping frame is made of ceramic, and its thickness is 1 / 4 to 1 / 2 of the depth of the mounting groove. The inner wall of the clamping frame is provided with multiple positioning protrusions, which abut against the edge of the heat-conducting pad. The lower surface of the clamping frame is provided with positioning grooves corresponding to the heat dissipation column, and the top of the heat dissipation column is inserted into the positioning groove and abuts against the inner wall of the positioning groove.
[0013] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by using a ceramic material for the clamping frame, it has good insulation performance and high temperature resistance, preventing short circuits and ensuring the stability of the packaging structure in high temperature environments; the positioning protrusions on the inner wall of the clamping frame can accurately position the thermal pad, preventing displacement of the thermal pad during use; by making the positioning groove on the lower surface of the clamping frame cooperate with the heat dissipation column, the stability of the structure is further enhanced, while also ensuring close contact between the heat dissipation column and the clamping frame, improving heat conduction efficiency.
[0014] Furthermore, the thermal pad has a rectangular structure, and its thickness is 1 / 4 to 1 / 3 of the thickness of the clamping frame; a chip mounting area is provided in the central area of the upper surface of the thermal pad, and the area of the chip mounting area is 40% to 60% of the area of the thermal pad; the material of the thermal pad is thermally conductive silicone, and the thermal conductivity of the thermally conductive silicone is λ≥4W / (m·K).
[0015] The beneficial effects of adopting the above-mentioned improved scheme are as follows: the rectangular structure design of the thermal pad matches the internal space of the clamping frame, and the thickness design ensures that the thermal pad can fully exert its thermal conductivity without generating excessive thermal resistance; the chip mounting area set on the upper surface of the thermal pad provides clear position guidance for the installation of the gallium nitride substrate, ensuring that the chip is in the optimal heat dissipation position; the selection of thermally conductive silicone with a thermal conductivity of not less than 4W / (m·K) as the thermal pad material can ensure good thermal conductivity and effectively conduct the heat generated by the gallium nitride substrate to the heat sink.
[0016] Furthermore, the electrode assembly includes eight electrode pins, which are evenly distributed along the four sidewalls of the base. The outer ends of the electrode pins are bent in an L-shape to form welding ends parallel to the bottom surface of the base. The inner ends of the electrode pins are connected to the edge of the heat-conducting pad by metal wires, the diameter of which is 1 / 10 to 1 / 5 of the diameter of the electrode pins.
[0017] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: By designing the electrode pins to be evenly distributed along the four side walls of the base, the layout of the electrode pins is more reasonable, which facilitates the connection of external circuits; by adopting the L-shaped bending design at the outer end of the electrode pins, a welding end parallel to the bottom surface of the base is formed, which facilitates the surface mount process of the PCB board and improves the compatibility of the package structure; by designing the inner end of the electrode pins to be connected to the edge of the thermal pad through a metal wire, the stability and reliability of the electrical connection are ensured, and the design of the wire diameter ensures that the wire has sufficient mechanical strength and conductivity.
[0018] Furthermore, the top of the heat dissipation column is a hemispherical structure, the diameter of which is larger than the diameter of the heat dissipation column. There are 16 heat dissipation columns, which are equidistantly distributed along the edge of the heat sink.
[0019] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by adopting a hemispherical structure design at the top of the heat sink, the contact area between the heat sink and the clamping frame is increased, thereby improving the heat conduction efficiency; the diameter of the hemispherical structure is larger than the diameter of the heat sink, forming an "umbrella-like" structure, which increases the mechanical strength of the heat sink and prevents the heat sink from bending or breaking during use; the design of sixteen heat sinks evenly distributed along the edge of the heat sink ensures that the heat on the heat sink can be evenly conducted to the outside of the packaging structure, thereby improving the overall heat dissipation efficiency.
[0020] Furthermore, the width of the mesh-like microgrooves is 1 / 20 to 1 / 15 of the thickness of the heat sink, and the depth of the mesh-like microgrooves is 1 / 10 to 1 / 8 of the thickness of the heat sink.
[0021] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by precisely designing the width and depth of the grid-like microgrooves, the microgrooves can increase the heat dissipation area without excessively weakening the mechanical strength of the heat sink; by designing the size of the microgrooves, more heat dissipation channels can be formed on the surface of the heat sink, improving heat exchange efficiency; at the same time, the presence of microgrooves can also reduce air flow resistance, promote air convection, further enhance the heat dissipation effect, and extend the service life of gallium nitride core.
[0022] Furthermore, the height of the positioning protrusions is 1 / 10 to 1 / 8 of the thickness of the clamping frame, and there are 8 positioning protrusions, which are evenly distributed on the inner wall of the clamping frame.
[0023] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: by designing the height of the positioning protrusions, they can effectively position the thermal pad without causing excessive pressure on it; the design of the eight positioning protrusions being evenly distributed on the inner wall of the clamping frame ensures that the thermal pad can be evenly positioned and supported in all directions, preventing the thermal pad from shifting or deforming during use. It can also form a small gap between the clamping frame and the thermal pad, which facilitates heat dissipation and reduces thermal stress concentration, thereby improving the reliability of the packaging structure.
[0024] Furthermore, the depth of the positioning groove is 1 / 5 to 1 / 4 of the thickness of the clamping frame, and the diameter of the positioning groove is 105% to 110% of the diameter of the hemispherical structure at the top of the heat sink.
[0025] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the depth design of the positioning groove ensures that the top of the heat sink can be stably inserted into the groove; the diameter of the positioning groove is slightly larger than the diameter of the hemispherical structure at the top of the heat sink, forming a clearance fit, which can not only ensure close contact between the heat sink and the groove, but also provide a certain buffer space during thermal expansion, preventing structural damage caused by thermal stress, and further improving the stability and reliability of the packaging structure under temperature change conditions.
[0026] Compared with existing technologies, the beneficial effects of the gallium nitride-based chip packaging structure provided by this utility model are as follows: By setting up a base, heat sink, clamping frame, thermal pad, and electrode assembly, it effectively solves the technical problems of low heat dissipation efficiency, concentrated thermal stress, unstable electrical connection, and complex structure that are difficult to assemble and maintain in existing technologies. Specifically, the base is made of aluminum alloy, which has good thermal conductivity and appropriate mechanical strength; the heat sink is made of copper, with a grid-like microgroove and multiple heat dissipation pillars on its surface, significantly increasing the heat dissipation area and heat conduction channels; the clamping frame is made of ceramic, which has good insulation and high-temperature resistance; the positioning protrusions on its inner wall and the positioning grooves on its lower surface ensure the precise positioning of the thermal pad and heat dissipation pillars; the thermal pad is made of thermally conductive silicone material with a high thermal conductivity, effectively conducting chip heat; the L-shaped design of the electrode pins and the metal wire connection method ensure the stability and reliability of the electrical connection. The above structural design forms a packaging structure with a short heat conduction path, large heat dissipation area, stable structure, and easy assembly and maintenance, which significantly improves the heat dissipation efficiency and service life of gallium nitride core, while enhancing the mechanical stability and electrical connection reliability of the packaging structure. Attached Figure Description
[0027] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0028] Figure 1 This is a schematic diagram of a packaging structure for a gallium nitride-based chip;
[0029] Figure 2 for Figure 1 Enlarged view of section A;
[0030] Figure 3 This is a top view schematic diagram of a gallium nitride-based chip packaging structure;
[0031] The attached diagram lists the components represented by each number as follows:
[0032] 10. Base; 11. Heat sink; 12. Clamping frame; 13. Thermal pad; 14. Electrode assembly; 15. Electrode pins; 16. Heat sink; 17. Mounting foot; 18. Positioning protrusion; 19. Positioning groove. Detailed Implementation
[0033] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings.
[0034] like Figure 1-3 The diagram shows an embodiment of a gallium nitride (GaN)-based chip packaging structure provided by this invention. In this embodiment, it includes a base 10, a heat sink 11, a clamping frame 12, a thermal pad 13, and an electrode assembly 14. The base 10 is rectangular, with a mounting groove in the central region of its upper surface. A base plate is formed between the bottom of the mounting groove and the lower surface of the base 10. The heat sink 11 is fixedly mounted at the bottom of the mounting groove. The clamping frame 12 is rectangular and annular, with its inner wall abutting against the side wall of the mounting groove. The thermal pad 13 is placed inside the clamping frame 12 and flush with the upper surface of the heat sink 11. The electrode assembly 14 includes at least four electrode pins 15. One end of each electrode pin 15 is embedded in the side wall of the base 10 and electrically connected to the edge of the thermal pad 13. The other end of each electrode pin 15 extends to the outside of the base 10. The upper surface of the heat sink 11 is provided with a plurality of heat dissipation columns 16. The heat dissipation columns 16 pass through the thermal pad 13 and abut against the lower surface of the clamping frame 12. The upper surface of the clamping frame 12 is provided with fixing holes at the four corners. Fixing bolts are inserted into the fixing holes. One end of the fixing bolts is threaded to the upper surface of the base 10 to fix the clamping frame 12 to the base 10.
[0035] In the above technical solution, the base 10 is made of aluminum alloy, and mounting feet 17 are provided at the four corners of the bottom of the base 10. The mounting feet 17 are provided with through holes for fixing the base 10 to an external device. The depth of the mounting groove is 1 / 3 to 1 / 2 of the height of the base 10. The four inner side walls of the mounting groove are provided with stepped structures, and the bottom of the outer side wall of the clamping frame 12 abuts against the upper surface of the stepped structure.
[0036] Furthermore, in the above technical solution, the heat sink 11 is made of copper, and the thickness of the heat sink 11 is 1 / 5 to 1 / 4 of the depth of the mounting groove; the upper surface of the heat sink 11 is provided with a grid-like microgroove, and the depth of the grid-like microgroove is 1 / 10 to 1 / 8 of the thickness of the heat sink 11; the heat dissipation pillars 16 are evenly distributed along the edge of the upper surface of the heat sink 11, and the height of the heat dissipation pillars 16 is 80% to 90% of the thickness of the clamping frame 12.
[0037] Furthermore, in the above technical solution, the clamping frame 12 is made of ceramic, and the thickness of the clamping frame 12 is 1 / 3 to 1 / 2 of the depth of the mounting groove; the inner wall of the clamping frame 12 is provided with a plurality of positioning protrusions 18, which abut against the edge of the heat-conducting pad 13; the lower surface of the clamping frame 12 is provided with a positioning groove 19 corresponding to the heat dissipation column 16, and the top end of the heat dissipation column 16 is inserted into the positioning groove 19 and abuts against the inner wall of the positioning groove 19.
[0038] Furthermore, in the above technical solution, the thermal pad 13 has a rectangular structure, and the thickness of the thermal pad 13 is 1 / 4 to 1 / 3 of the thickness of the clamping frame 12; a chip mounting area is provided in the central area of the upper surface of the thermal pad 13, and the area of the chip mounting area is 40% to 60% of the area of the thermal pad 13; the material of the thermal pad 13 is thermally conductive silicone, and the thermal conductivity of the thermally conductive silicone is λ≥4W / (m·K).
[0039] Furthermore, in the above technical solution, the electrode assembly 14 includes 8 electrode pins 15, which are evenly distributed along the 4 sidewalls of the base 10; the outer ends of the electrode pins 15 are bent in an L-shape to form a welding end parallel to the bottom surface of the base 10; the inner ends of the electrode pins 15 are connected to the edge of the heat-conducting pad 13 by a metal wire, the diameter of which is 1 / 10 to 1 / 5 of the diameter of the electrode pins 15.
[0040] Furthermore, in the above technical solution, the top of the heat dissipation column 16 is a hemispherical structure, the diameter of the hemispherical structure is larger than the diameter of the heat dissipation column 16, and the number of heat dissipation columns 16 is 16, which are equidistantly distributed along the edge of the heat sink 11.
[0041] Furthermore, in the above technical solution, the width of the mesh-like microgroove is 1 / 20 to 1 / 15 of the thickness of the heat sink 11, and the depth of the mesh-like microgroove is 1 / 10 to 1 / 8 of the thickness of the heat sink 11.
[0042] Furthermore, in the above technical solution, the height of the positioning protrusion 18 is 1 / 10 to 1 / 8 of the thickness of the pressing frame 12, and the number of positioning protrusions 18 is 8, which are equidistantly distributed on the inner wall of the pressing frame 12.
[0043] Furthermore, in the above technical solution, the depth of the positioning groove 19 is 1 / 5 to 1 / 4 of the thickness of the clamping frame 12, and the diameter of the positioning groove 19 is 105% to 110% of the diameter of the hemispherical structure at the top of the heat dissipation column 16.
[0044] The following is a specific application example of this application:
[0045] In this embodiment, the base is made of AL6061-T6 aluminum alloy, and is rectangular in shape, with a length of 40mm, a width of 30mm, and a height of 10mm. A mounting groove with a length of 30mm, a width of 20mm, and a depth of 5mm is formed in the central area of the upper surface of the base. A base plate with a thickness of 5mm is formed between the bottom of the mounting groove and the lower surface of the base. Mounting feet with a height of 2mm are provided at the four corners of the bottom of the base, and each mounting foot has a through hole with a diameter of 3mm. Each of the four inner sidewalls of the mounting groove has a stepped structure with a height of 1mm and a width of 0.5mm. The heat sink is made of T2 copper, with a length of 29.5mm, a width of 19.5mm, and a thickness of 1mm. A 0.1mm thick layer of thermal grease with a thermal conductivity of 6W / (m·K) is applied between the heat sink and the bottom of the mounting groove.
[0046] The heatsink has a grid-like microgroove on its upper surface, with a groove width of 0.1 mm, a depth of 0.2 mm, and a grid spacing of 1 mm. Sixteen heat dissipation pillars are evenly distributed along the edge of the upper surface of the heatsink. Each pillar has a diameter of 1 mm, a height of 3 mm, and a hemispherical top with a diameter of 1.2 mm. The thermal pad is made of thermally conductive silicone material with a thermal conductivity of 5 Kelvin per meter, and is 28 mm long, 18 mm wide, and 1 mm thick.
[0047] The upper surface of the thermal pad has a central chip mounting area, which occupies 50% of the pad's area. This area is coated with thermal grease for mounting gallium nitride-based chips. The clamping frame is made of 96% alumina ceramic material, with external dimensions of 30mm in length and 20mm in width. The internal opening dimensions are 28mm in length, 18mm in width, and 3mm in thickness.
[0048] The inner wall of the clamping frame has eight positioning protrusions, each 0.3mm high, evenly distributed. The lower surface of the clamping frame has 16 positioning grooves corresponding to the heat dissipation pillars, each groove having a diameter of 1.3mm and a depth of 0.7mm. The upper surface of the clamping frame has four corner fixing holes with a diameter of 2.5mm, into which M2.5 fixing bolts, each 8mm long, are inserted.
[0049] The electrode assembly includes eight electrode leads made of gold-plated phosphor bronze, with a diameter of 0.8 mm and a length of 15 mm. The outer ends of the electrode leads are L-shaped bends, forming a 5 mm long solder end parallel to the bottom surface of the base. The inner ends of the electrode leads are connected to the edge of the thermal pad via 0.1 mm diameter metal wires.
[0050] The gallium nitride-based chip packaging structure in this embodiment has a significant heat dissipation effect in practical applications, with a thermal resistance as low as 0.5℃ / W, which is far lower than the 1.2℃ / W of traditional packaging structures. It has good structural stability, strong vibration resistance, reliable electrical connection, and convenient assembly and maintenance. It is particularly suitable for gallium nitride-based chip packaging with high power density and high frequency operation.
[0051] Specifically, the principle of this invention is as follows: based on the fundamental principles of heat conduction and radiation, a highly efficient heat conduction path and heat dissipation system are formed. Specifically, the base, serving as the supporting foundation of the entire packaging structure, is made of aluminum alloy with excellent thermal conductivity, effectively conducting and dispersing heat. The heat sink uses copper, which has a higher thermal conductivity, improving heat conduction efficiency. The grid-like microgrooves on its surface increase the heat dissipation area, promoting heat radiation and air convection heat transfer. The design of the heat dissipation pillars forms a direct heat conduction channel from the heat sink to the clamping frame, shortening the heat conduction distance. The clamping frame uses ceramic material, which has good insulation properties and can also conduct and radiate heat to a certain extent. The thermal pad uses high thermal conductivity silicone material, effectively conducting the heat generated by the gallium nitride core to the heat sink. Its flexibility buffers stress caused by thermal expansion, preventing thermal stress concentration from causing structural damage. The L-shaped design of the electrode pins and the metal wire connection method not only ensure the stability and reliability of the electrical connection but also reduce the impact of the electrical connection on heat conduction. The entire encapsulation structure is secured with fixing bolts, forming a compact and stable whole. The design of the cooperation between the components ensures the continuity and stability of the heat conduction path, thereby achieving the technical effects of efficient heat dissipation, structural stability and easy assembly and maintenance.
Claims
1. A packaging structure of a gallium nitride-based core, characterized by, The utility model provides a heat dissipation device, which comprises a base, a heat dissipation fin, a compression frame, a heat-conducting pad and an electrode assembly; the base is in the shape of a cuboid, a mounting groove is formed in the central region of the upper surface of the base, and a bottom plate is formed between the bottom of the mounting groove and the lower surface of the base; the heat dissipation fin is fixedly installed at the bottom of the mounting groove; the compression frame is in the shape of a rectangular ring, the inner wall of the compression frame is in abutment with the side wall of the mounting groove; the heat-conducting pad is arranged in the interior of the compression frame and is in abutment with the upper surface of the heat dissipation fin; the electrode assembly comprises at least four electrode pins, one end of each electrode pin is embedded in the side wall of the base and is electrically connected with the edge of the heat-conducting pad, and the other end of each electrode pin extends to the outside of the base; the upper surface of the heat dissipation fin is provided with a plurality of heat dissipation columns, the heat dissipation columns pass through the heat-conducting pad and are in abutment with the lower surface of the compression frame; the upper surface of the compression frame is provided with fixing holes at four corners, fixing bolts are arranged in the fixing holes, one end of each fixing bolt is threadedly connected with the upper surface of the base, and the fixing bolts are used for fixing the compression frame on the base.
2. The packaging structure of a gallium nitride-based core according to claim 1, wherein The base is made of aluminum alloy, the bottom of the base is provided with mounting feet at four corners, the mounting feet are provided with through holes, and the through holes are used for fixing the base on an external device; the depth of the mounting groove is 1 / 2-1 / 2 of the height of the base; the four inner side walls of the mounting groove are each provided with a stepped structure, and the bottom of the outer side wall of the compression frame is in abutment with the upper surface of the stepped structure.
3. The packaging structure of a gallium nitride-based core according to claim 2, wherein The heat dissipation fin is made of copper, and the thickness of the heat dissipation fin is 1 / 5-1 / 4 of the depth of the mounting groove; the upper surface of the heat dissipation fin is provided with a grid-shaped micro groove, and the depth of the grid-shaped micro groove is 1 / 10-1 / 8 of the thickness of the heat dissipation fin; the heat dissipation columns are uniformly distributed along the edge of the upper surface of the heat dissipation fin, and the height of the heat dissipation columns is 80%-90% of the thickness of the compression frame.
4. The packaging structure of a gallium nitride-based chip according to claim 3, wherein The compression frame is made of ceramic, and the thickness of the compression frame is 1 / 3-1 / 2 of the depth of the mounting groove; the inner wall of the compression frame is provided with a plurality of positioning protrusions, and the positioning protrusions are in abutment with the edge of the heat-conducting pad; the lower surface of the compression frame is provided with positioning grooves corresponding to the heat dissipation columns, and the top end of each heat dissipation column is inserted into the positioning groove and is in abutment with the inner wall of the positioning groove.
5. The packaging structure of a gallium nitride-based core according to claim 4, wherein The heat-conducting pad is in the shape of a rectangle, the thickness of the heat-conducting pad is 1 / 4-1 / 3 of the thickness of the compression frame, the central region of the upper surface of the heat-conducting pad is provided with a chip mounting area, the area of the chip mounting area is 40%-60% of the area of the heat-conducting pad, and the material of the heat-conducting pad is heat-conducting silica gel with a heat conductivity coefficient λ of greater than or equal to 4 W / (m·K).
6. The packaging structure of a gallium nitride-based chip according to claim 5, wherein The electrode assembly comprises eight electrode pins, and the eight electrode pins are uniformly distributed along the four side walls of the base; the outer end of each electrode pin is bent in the shape of L to form a welding end parallel to the bottom surface of the base; the inner end of each electrode pin is connected with the edge of the heat-conducting pad through a metal wire, and the diameter of the metal wire is 1 / 10-1 / 5 of the diameter of the electrode pin.
7. The packaging structure of a gallium nitride-based chip according to claim 6, wherein The top end of each heat dissipation column is in the shape of a hemisphere, the diameter of the hemisphere is greater than the diameter of the heat dissipation column, the number of the heat dissipation columns is 16, and the 16 heat dissipation columns are equidistantly distributed along the edge of the heat dissipation fin.
8. The packaging structure of a gallium nitride-based chip according to claim 7, wherein The width of the grid-shaped micro groove is 1 / 20-1 / 15 of the thickness of the heat dissipation fin, and the depth of the grid-shaped micro groove is 1 / 10-1 / 8 of the thickness of the heat dissipation fin.
9. The packaging structure of a gallium nitride-based chip according to claim 8, wherein The height of each positioning protrusion is 1 / 10-1 / 8 of the thickness of the compression frame, the number of the positioning protrusions is eight, and the eight positioning protrusions are equidistantly distributed on the inner wall of the compression frame.
10. The packaging structure of a gallium nitride-based chip according to claim 9, wherein The depth of the positioning groove is 1 / 5-1 / 4 of the thickness of the pressing frame, and the diameter of the positioning groove is 105%-110% of the diameter of the hemispherical structure at the top of the heat dissipation column.