Radiator capable of directly packaging semiconductor chip

Abstract

The utility model relates to the field of radiators, and discloses a radiator capable of directly packaging a semiconductor chip, which comprises a bottom plate, the upper surface of the bottom plate is provided with a mounting hole, the inner wall of the bottom plate is fixedly connected with a radiating column, the upper surface of the bottom plate is provided with a copper coating, the upper surface of the copper coating is provided with a copper-clad ceramic plate, and the upper surface of the copper coating is provided with a copper-clad ceramic plate. The interior of the bottom plate is hollow, and the upper surface of the bottom plate is a plane, a convex surface or a concave surface. According to the utility model, the copper coating is processed on the surface of the radiator in a cold spraying manner, and the coating realizes integral tin soldering or copper and silver sintering of the power device, the copper-clad ceramic plate and the radiator, so that a planar substrate and heat-conducting silicone grease in the original process are removed, and the interface thermal resistance between the power device and the radiator is broken; the heat dissipation efficiency of the power device is effectively improved, the effect of reducing the working temperature of the power device is achieved, and then the operation reliability and stability of the device are improved.

Description

Technical Field

[0001] This utility model relates to the field of heat sinks, and more particularly to a heat sink that can directly encapsulate semiconductor chips. Background Technology

[0002] Power electronic modules such as IGBTs experience power loss during operation, with the lost electrical energy dissipated into the surrounding environment as heat. Because semiconductor materials are sensitive to temperature, insufficient heat dissipation can lead to performance degradation or even module burnout. Furthermore, power modules are constructed from multiple layers of different materials with varying properties, including thermal conductivity, specific heat capacity, Poisson's ratio, and coefficient of thermal expansion. When temperature changes occur, the cyclic thermal stress generated between these layers due to differences in thermal expansion coefficients can cause solder cracking, pin detachment, ceramic layer breakage, and chip fracture, ultimately leading to chip failure.

[0003] Therefore, effective methods are needed to alleviate the thermal stress caused by temperature changes when the power module is working. Currently, the traditional method is to encapsulate the chip on a planar substrate to fix the chip and enhance its heat dissipation. The substrate material is mainly pure copper, aluminum silicon carbide, etc. Thermal grease is filled between the power semiconductor device and the aluminum heat sink, and then bolts are used to lock it for heat dissipation.

[0004] However, since the substrate has a certain thickness and is prone to heat expansion during use, there is an interfacial thermal resistance between the power device and the heat sink, which affects the heat dissipation effect.

[0005] To address this issue, a heat sink that can directly encapsulate semiconductor chips is proposed. Utility Model Content

[0006] To overcome the above shortcomings, this utility model provides a heat sink that can directly encapsulate semiconductor chips, aiming to improve the problem that interface thermal resistance affects heat dissipation in widely used traditional installation methods.

[0007] To achieve the above objectives, the present invention adopts the following technical solution: a heat sink that can directly encapsulate semiconductor chips, including a base plate, an installation hole on the upper surface of the base plate, a heat dissipation column fixedly connected to the inner wall of the base plate, a copper coating on the upper surface of the base plate, and a copper-clad ceramic plate on the upper surface of the copper coating.

[0008] As a further description of the above technical solution:

[0009] The interior of the base plate is hollow, and the upper surface of the base plate is flat, convex, or concave.

[0010] As a further description of the above technical solution:

[0011] Water pipes are fixedly connected to the left and right ends of the lower surface of the base plate.

[0012] As a further description of the above technical solution:

[0013] The copper-clad ceramic plate includes a ceramic layer, and a copper layer is fixedly connected to the upper surface of the ceramic layer.

[0014] As a further description of the above technical solution:

[0015] The copper layer is fixedly connected to the upper surface of the copper coating.

[0016] As a further description of the above technical solution:

[0017] The thickness of the copper coating is 0.1-2mm, and the thickness of the base plate is 1.5mm-30mm.

[0018] This utility model has the following beneficial effects:

[0019] 1. In this utility model, a copper coating is processed on the surface of the heat sink by cold spraying. This coating enables the power device and the copper-clad ceramic plate to be integrally soldered or sintered with copper and silver with the heat sink. This eliminates the planar substrate and thermal grease of the original process, breaks the interfacial thermal resistance between the power device and the heat sink, effectively improves the heat dissipation efficiency of the power device, achieves the effect of reducing the operating temperature of the power device, and thus improves the reliability and stability of the device operation.

[0020] 2. In this utility model, the ceramic layer has good insulation properties, which can effectively prevent short circuits. Its high thermal conductivity can also assist in the directional transfer of heat and ensure heat dissipation. The copper layer and copper coating have excellent thermal conductivity, which can further broaden the heat transfer path and improve heat dissipation efficiency. Attached Figure Description

[0021] Figure 1 This is a front view of the three-dimensional structure of the overall device in this utility model;

[0022] Figure 2 This is a three-dimensional cross-sectional diagram of the bottom plate and the copper-clad ceramic plate of this utility model.

[0023] Figure 3 This is a three-dimensional structural diagram of the base plate and copper-clad ceramic plate in Embodiment 2 of this utility model.

[0024] Figure 4 This is a front view of the first three-dimensional structure of the overall device in Embodiment 3 of this utility model;

[0025] Figure 5 This is a front view schematic diagram of the second three-dimensional structure of the overall device in Embodiment 3 of this utility model.

[0026] Legend:

[0027] 1. Base plate; 101. Mounting hole; 2. Connecting water pipe; 3. Heat dissipation column; 4. Copper coating; 5. Copper-clad ceramic plate; 51. Ceramic layer; 52. Copper layer; 6. Heat dissipation fins. Detailed Implementation

[0028] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0029] Example 1:

[0030] Reference Figure 1 - Figure 2 This utility model provides an embodiment of a heat sink that can directly encapsulate semiconductor chips. The heat sink includes an aluminum base plate 1 for low cost and light weight. Mounting holes 101 are provided on the upper surface of the base plate 1, covering both the front and rear sides of the upper surface and penetrating the base plate 1 to facilitate subsequent installation. Multiple heat sink columns 3 are fixedly connected to the inner wall of the base plate 1. These columns can be cylindrical, elliptical, or sheet-like, and are arranged in an array or cross pattern along the inner wall of the base plate 1. The upper and lower surfaces of the heat sink columns 3 contact the upper and lower inner walls of the base plate 1. The upper surface of the base plate 1... A copper coating 4 is provided, which can be made of pure copper or copper-tungsten alloy. A copper-clad ceramic plate 5 is provided on the upper surface of the copper coating 4. The copper-clad ceramic plate 5 is a composite material, which can be DBC (composed of ceramic and copper layers) or AMB (composed of ceramic and metal layers). In this utility model, DBC (composed of ceramic and copper layers) is used as an example. During subsequent installation, the copper coating 4 enables the power device and the copper-clad ceramic plate to be integrally soldered or sintered with copper and silver with the heat sink. This eliminates the need for the original planar substrate and thermal grease, and breaks the interface thermal resistance between the power device and the heat sink.

[0031] Reference Figure 1 - Figure 2The interior of the base plate 1 is hollow, and the upper surface of the base plate 1 is flat, convex or concave. The copper coating 4 is applied to the flat, convex or concave surface by cold spraying, and is integrated with the base plate 1 to facilitate heat transfer. The left and right ends of the lower surface of the base plate 1 are connected to the connecting water pipes 2. One set of connecting water pipes 2 is connected to the external water inlet pipe joint, and the other set of connecting water pipes 2 is connected to the external water outlet pipe joint. In use, water will pass through multiple sets of heat dissipation columns 3, carrying away the heat on the multiple sets of heat dissipation columns 3 to achieve heat dissipation.

[0032] Reference Figure 1 - Figure 2 The copper-clad ceramic plate 5 includes a ceramic layer 51, which has good insulation properties and can effectively prevent short circuits. A copper layer 52 is fixedly connected to the upper surface of the ceramic layer 51. The copper layer 52 is fixedly connected to the upper surface of the copper coating 4. The thickness of the copper coating 4 is 0.1-2mm. The thickness of the base plate 1 is 1.5mm-30mm. The heat sink material is 6-series aluminum alloy or 1-series pure aluminum and aluminum silicon carbide.

[0033] Example 2:

[0034] Reference Figure 1 , Figure 3 The difference between this second embodiment and the first embodiment is that in the second embodiment, heat dissipation fins 6 are used to replace the connecting water pipe 2 and heat dissipation column 3, and the thickness of the base plate 1 used is thinner.

[0035] Reference Figure 1 , Figure 3 The heat dissipation fins 6 are provided in multiple sets, arranged in a horizontally equidistant manner, and the thickness of the heat dissipation fins 6 is 0.3mm-30mm.

[0036] Example 3:

[0037] Reference Figure 1 , Figure 4 , Figure 5 The difference between this embodiment three and embodiment one is that in embodiment three, the connecting water pipe 2 can be distributed in two sets at the left or right end of the lower or upper surface of the base plate 1.

[0038] Working principle: After the device is installed on the power device, the heat generated by the power device during operation is first transferred to the copper-clad ceramic plate 5. Due to the good thermal conductivity of the ceramic layer 51 and the copper layer 52, the heat can be conducted quickly. Then, the heat is transferred to the base plate 1 through the copper coating layer 4. The good thermal conductivity of the copper coating layer 4, the ceramic layer 51 and the copper layer 52 ensures the high efficiency of heat transfer. In this process, the good insulation of the ceramic layer 51 prevents short circuits.

[0039] The heat transferred to the base plate 1 will accumulate on the base plate 1 and the heat dissipation column 3. When the external water source enters the interior of the base plate 1 through the connecting water pipe 2, the water flows through the heat dissipation column 3. Taking advantage of the high specific heat capacity of water, the water absorbs the heat on the heat dissipation column 3. The heat is carried away by the heat conduction between the materials and the circulation of water, thereby achieving heat dissipation and cooling of the power device and ensuring its stable operation.

[0040] Furthermore, the copper coating 4 and the copper-clad ceramic plate 5 are installed on the base plate 1 and the power device through a cold spraying process, which can break the interface thermal resistance between the power device and the device, improve the heat dissipation efficiency of the power device, and achieve the effect of reducing the operating temperature of the power device.

[0041] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A heat sink for directly encapsulating semiconductor chips, comprising a base plate (1), characterized in that: The upper surface of the base plate (1) is provided with mounting holes (101), the inner wall of the base plate (1) is fixedly connected with heat dissipation columns (3), the upper surface of the base plate (1) is provided with a copper coating (4), and the upper surface of the copper coating (4) is provided with a copper-clad ceramic plate (5).

2. The heat sink for directly encapsulating semiconductor chips according to claim 1, characterized in that: The interior of the base plate (1) is hollow, and the upper surface of the base plate (1) is a plane, a convex surface or a concave surface.

3. A heat sink for directly encapsulating semiconductor chips according to claim 1, characterized in that: Water pipes (2) are fixedly connected to the left and right ends of the lower surface of the base plate (1).

4. A heat sink for directly packaging semiconductor chips according to claim 1, characterized in that: The copper-clad ceramic plate (5) includes a ceramic layer (51), and a copper layer (52) is fixedly connected to the upper surface of the ceramic layer (51).

5. A heat sink for directly encapsulating semiconductor chips according to claim 4, characterized in that: The copper layer (52) is fixedly connected to the upper surface of the copper coating layer (4).

6. A heat sink for directly packaging semiconductor chips according to claim 1, characterized in that: The thickness of the copper coating (4) is 0.1-2 mm, and the thickness of the base plate (1) is 1.5 mm-30 mm.

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