Deposition ring, process assembly and process chamber

Abstract

The utility model provides a deposition ring, a process assembly and a process chamber. The deposition ring comprises a deposition groove, wherein the deposition groove comprises a first convex ring part located on the inner side, a second convex ring part located on the outer side and a bottom wall between the first convex ring part and the second convex ring part; the bearing part is located on the outer side of the deposition groove, the top of the bearing part is provided with an abutting face, the plane where the abutting face is located is lower than the top of the second convex ring part, and an annular groove is formed in the abutting face. The deposition ring in the embodiment of the utility model is used for being matched with a shielding ring in a process chamber, as shown in the figure, when the deposition ring is matched with the shielding ring, the abutting surface abuts against the shielding ring, and the annular groove is formed in the abutting surface, so that a labyrinth structure can be formed between the abutting surface and the deposition ring; the target material particles are not prone to entering the abutting position of the abutting face and the deposition ring, and therefore the probability that the shielding ring adheres to the deposition ring is reduced.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, specifically to a deposition ring, a process component, and a process chamber. Background Technology

[0002] Currently, physical vapor deposition (PVD) is an important process for preparing metal thin films in semiconductors, and sputtering is one of the most commonly used and technologically mature methods of PVD.

[0003] In some thin film fabrication processes, target particles can easily enter tiny gaps, especially metals with high self-ionization rates such as copper. These particles can enter between deposition rings, causing the shielding ring to stick to the deposition ring. When the wafer is transported, the substrate moves downwards. The deposition ring, which should move downwards with the substrate, will not follow because it is stuck to the shielding ring. This causes the deposition ring to hit the wafer, preventing wafer transport and potentially damaging it. Utility Model Content

[0004] This invention aims to at least solve the problem in the prior art where target particles enter between deposition rings, causing the shielding ring and deposition ring to stick together. It proposes a deposition ring, a process component, and a process chamber.

[0005] To achieve the purpose of this utility model, a deposition ring is provided for a process chamber. The deposition ring includes: a deposition tank, which includes a first convex ring portion located on the inner side, a second convex ring portion located on the outer side, and a bottom wall between the first convex ring portion and the second convex ring portion; and a support portion located on the outer side of the deposition tank, the top of the support portion having an abutment surface, the plane of which the abutment surface is located is lower than the top of the second convex ring portion, and an annular groove is formed on the abutment surface.

[0006] In some embodiments, the width of the deposition tank in the radial direction of the deposition ring is D1, and the thickness of the bottom wall of the deposition tank is D2, where 2≤D2 / D1≤8.

[0007] In some embodiments, the annular groove is located near the second convex ring portion.

[0008] In some embodiments, it further includes: a bottom ring, comprising an annular portion and a support portion, the annular portion being connected to the bottom of the support portion, and the support portion being connected to the inner peripheral wall of the annular portion to support the support portion.

[0009] In some embodiments, the support portion includes at least three support columns, all of which are spaced apart in the circumferential direction of the deposition ring, the top of each support column being connected to the bottom of the bearing portion, and the outer side of each support column being connected to the inner side of the annular portion.

[0010] In some embodiments, the annular portion is connected to the outer periphery of the bottom of the support portion, the bottom of the support portion is provided with a relief groove, the relief groove is located inside the annular portion, and the outer periphery of the support portion is provided with a limiting groove corresponding to and communicating with the relief groove.

[0011] In some embodiments, there are multiple limiting grooves, which are spaced apart circumferentially along the deposition ring. There are also multiple clearance grooves, which correspond one-to-one with the limiting grooves. The clearance grooves are connected to the corresponding limiting grooves.

[0012] In some embodiments, a limiting structure is provided on the annular portion.

[0013] In some embodiments, the deposition tank, the support portion, and the bottom ring are integrally formed.

[0014] In some embodiments, the outer periphery of the bearing portion is provided with a first guide surface for guiding and fitting, the first guide surface forming a first angle A1 with the vertical direction, and the value of the first angle A1 is in the range of 3°-60°.

[0015] According to a second aspect of the present invention, a process assembly for a process chamber is also disclosed, the process assembly comprising: the aforementioned deposition ring and shielding ring, the shielding ring being fitted onto the outer periphery of the deposition ring.

[0016] In some embodiments, the shielding ring includes: an abutting portion abutting against the abutting surface of the shielding ring; an annular shielding portion, the inner periphery of which is located above the deposition tank, the outer periphery of which is connected to the abutting portion, a first gap being formed between the bottom of the annular shielding portion and the top of the second convex ring portion, the length of the first gap in the radial direction of the deposition ring being D3, the height of the first gap in the vertical direction being D4, and D3 / D4 > 2.

[0017] In some embodiments, a second gap communicating with the annular groove is formed between the outer peripheral wall of the second convex ring portion and the inner peripheral wall of the abutting portion, the first gap and the second gap are communicating, and the first gap, the second gap and the annular groove form a labyrinth structure.

[0018] In some embodiments, the shielding ring further includes a shielding cover, comprising a third convex ring portion located on the inner side, a fourth convex ring portion located on the outer side, and a top wall between the third convex ring portion and the fourth convex ring portion, wherein the third convex ring portion is connected to the abutment portion.

[0019] In some embodiments, the inner peripheral wall of the third convex ring portion is positioned to engage with the outer peripheral wall of the deposition ring, so that the shielding ring and the deposition ring are concentric.

[0020] In some embodiments, the outer peripheral side of the bearing portion is provided with a first guide surface for guiding and engaging with the inner peripheral wall of the third convex ring portion. The first guide surface and the inner peripheral wall of the third convex ring portion are in clearance engagement. The distance D7 between the first guide surface and the inner peripheral wall of the third convex ring portion ranges from 0.02 to 3 mm.

[0021] In some embodiments, the deposition ring further includes: a bottom ring, including an annular portion and a support portion, the support portion being connected to the inner peripheral wall of the annular portion, the support portion being used to support on a carrier, so that a receiving space is formed between the bottom wall of the deposition tank and the carrier; the process assembly further includes: a pressure ring, disposed within the receiving space.

[0022] According to a second aspect of the present invention, a process chamber is also disclosed, comprising: a chamber body, a wafer carrier device, and the aforementioned process components, wherein the wafer carrier device and the process components are both disposed within the chamber body.

[0023] In some embodiments, the wafer carrier includes: a chuck, with the deposition ring disposed around the chuck; and a base on which the deposition ring is supported.

[0024] In the embodiments of this utility model, the deposition ring is used to cooperate with the shielding ring in the process chamber. As shown in the figure, when the deposition ring and the shielding ring are cooperated, the contact surface abuts against the shielding ring. By setting an annular groove on the contact surface, a labyrinth structure can be formed between the contact surface and the deposition ring, making it difficult for target particles to enter the contact position between the contact surface and the deposition ring, thereby reducing the probability of the shielding ring and the deposition ring sticking together. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of semiconductor process equipment in related technologies;

[0026] Figure 2 This is a schematic diagram of the structure of semiconductor process equipment in another related technology;

[0027] Figure 3 This is a schematic diagram of the deposition ring structure according to an embodiment of the present invention;

[0028] Figure 4 for Figure 3 Sectional view along axis AA;

[0029] Figure 5 for Figure 3 BB-direction sectional view;

[0030] Figure 6 This is a schematic diagram of the deposition ring structure according to an embodiment of the present invention;

[0031] Figure 7 This is a schematic diagram of the structure of the process components according to an embodiment of the present utility model;

[0032] Figure 8 for Figure 7 A magnified view of part A in the middle;

[0033] Figure 9 This is a schematic diagram of the structure of the process chamber in an embodiment of the present invention;

[0034] List of reference numerals in the attached diagram:

[0035] 10. Deposition ring; 11. Deposition tank; 111. First convex ring portion; 112. Second convex ring portion; 113. Bottom wall; 12. Supporting portion; 121. Abutting surface; 122. Annular groove; 123. Groove; 124. Limiting groove; 125. First guide surface; 13. Bottom ring; 131. Annular portion; 1311. Limiting structure; 132. Support portion; 1321. Support column; 20. Shielding ring; 21. Annular shielding portion; 211. First... 1. Mating surface; 22. Abutting part; 23. Shielding cover; 231. Third convex ring part; 232. Fourth convex ring part; 233. Top wall; 30. Accommodation space; 41. First gap; 42. Second gap; 50. Wafer carrier; 51. Chuck; 511. Annular boss; 52. Base; 54. Limiting component; 541. Connecting plate; 542. Vertical plate; 543. Clamping plate; 70. Process space; 80. Wafer; 90. Pressure ring. Detailed Implementation

[0036] To enable those skilled in the art to better understand the technical solution of this utility model, the deposition ring, process components and process chamber provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0037] In such Figure 1 In the related technologies shown, taking a PVD equipment as an example, the process chamber may include: a chamber body 10a, a base 20a, a target material 30a, an insulating ring 50a, a support 60a, and a process assembly 90a. The base 20a is used to support the wafer 40a, the vacuum pump 70a is used to evacuate the chamber body 10a, and the gas source 80a is used to introduce process gas into the chamber body 10a. The process assembly 90a mainly includes a deposition ring 91a, a shielding ring 92a, and a shielding component 93a. The base 20a, the target material 30a, and the process assembly 90a enclose a process space. By applying radio frequency power to the target material 30a, the process gas within the process space is excited to generate plasma. The plasma bombards the target material 30a, and the target particles sputtered down are deposited on the surface of the wafer 40a to form a thin film. Simultaneously, the target particles are also deposited indiscriminately throughout the process chamber.

[0038] The deposition ring 91a is usually made of ceramic, which has a small coefficient of expansion. The target particles used for deposition are usually made of metal, which has a large coefficient of expansion. During the process, as the temperature changes, both the deposit formed by the target particles and the deposition ring 91a will expand and contract with the temperature. However, since the deposit formed by the target particles has a larger coefficient of expansion, the degree of thermal expansion and contraction of the deposit formed by the target particles is greater. Therefore, stress will be applied to the deposition ring.

[0039] Normally, the strength of the existing deposition ring can withstand the stress generated by the target particle deposits during a typical maintenance cycle. However, as the maintenance cycle is extended and there are more deposits in the deposition cavity, the stress on the deposition ring will also increase accordingly, which can easily lead to damage to the deposition ring.

[0040] exist Figure 2 The related technology shown discloses a process component including a deposition ring 10b and a shielding ring 20b. In some thin film fabrication processes, target particles can easily enter tiny gaps, especially metals with high self-ionization rates such as copper. This can lead to... Figure 2 As indicated by the arrow, the shielding ring 20b enters the outer protrusion 13b of the deposition ring 10b, causing it to adhere to the deposition ring 10b. When transferring the wafer 40b, the shielding ring 20b is supported by the shielding component 93b, and the base 30b moves the wafer 40b downwards. At this time, the deposition ring 10b should follow the base 30b downwards. However, when the shielding ring 20b adheres to the deposition ring 10b, the deposition ring 10b will not move downwards with the base 30b, thus hitting the wafer 40b and preventing its transfer. In severe cases, this can damage the wafer 40b.

[0041] In addition, a deposition cavity 11b is provided on the deposition ring 10b. The thickness between the bottom surface 111b of the deposition cavity 11b and the lower surface 12b of the deposition ring 10b is small, which reduces the strength of the deposition ring 10b and makes it unable to withstand excessive stress. Therefore, when the maintenance cycle is extended, the stress caused by the target particles on the deposition ring 10b is greater, and the deposition ring 10b is more easily damaged. As a result, the deposition ring 10b in the related technology cannot withstand a longer maintenance cycle, which increases the maintenance cost.

[0042] To solve the above technical problems, such as Figures 3 to 8In the illustrated embodiment, a deposition ring 10 is disclosed, comprising a deposition tank 11 and a support portion 12. The deposition tank 11 includes a first convex ring portion 111 located on the inner side, a second convex ring portion 112 located on the outer side, and a bottom wall 113 between the first convex ring portion 111 and the second convex ring portion 112; the support portion 12 is located on the outer side of the deposition tank 11, and the top of the support portion 12 has an abutment surface 121, the plane of which the abutment surface 121 is located is lower than the top of the second convex ring portion 112, and an annular groove 122 is formed on the abutment surface 121.

[0043] In embodiments of this invention, the deposition ring 10 is used to cooperate with the shielding ring 20 in the process chamber, such as... Figure 7 As shown, when the deposition ring 10 and the shielding ring 20 are engaged, the contact surface 121 abuts against the shielding ring 20. By providing an annular groove 122 on the contact surface 121, a labyrinth structure can be formed between the contact surface 121 and the shielding ring 20, making it difficult for target particles to enter the contact position between the contact surface 121 and the shielding ring 20, thereby reducing the probability of the shielding ring 20 and the deposition ring 10 sticking together.

[0044] In some embodiments, such as Figure 3 and Figure 4 As shown, the deposition ring 10 further includes a bottom ring 13. The bottom ring 13 includes an annular portion 131 and a support portion 132. The annular portion 131 is connected to the bottom of the support portion 12, and the support portion 132 is connected to the inner peripheral wall of the annular portion 131 to support the support portion 12.

[0045] like Figure 3 As shown, the support portion 132 is connected to the inner side of the annular portion 131 and is located at the bottom of the support portion 12. In use, as... Figure 7 As shown, the deposition ring 10 is supported on the wafer carrier 50 by the support portion 132, so that a receiving space 30 for accommodating the pressure ring 90 is formed between the bottom of the deposition ring 10 and the wafer carrier 50. In other words, as Figure 3 As shown, the support portion 132 is provided on the side of the deposition ring 10 facing downwards during use. Therefore, the deposition ring 10 can be supported on the wafer carrier device 50 by the support portion 132.

[0046] For example, such as Figure 4 As shown, the support portion 132 includes three support pillars 1321, which are spaced apart circumferentially around the deposition ring 10. The top of each support pillar 1321 is connected to the bottom of the support portion 12, and the outer side of each support pillar 1321 is connected to the inner side of the annular portion 131. The bottom of each support pillar 1321 is used to support the wafer carrier device 50. Figure 3As shown, three support pillars 1321 are evenly spaced in the circumferential direction of the deposition ring 10 so that a receiving space 30 for accommodating the pressure ring 90 is formed between the deposition ring 10 and the wafer carrier device 50.

[0047] During assembly, such as Figure 7 As shown, since there is a receiving space 30 below the deposition ring 10, the pressure ring 90 can be installed in the receiving space 30, so that the pressure ring 90 presses the chuck 51 down onto the base 52. This makes the base 52 more stable and also protects the pressure ring 90 from damage by the deposition ring 10. In addition, each support post 1321 is located below the abutment surface 121. Therefore, the support post 1321 can directly apply a supporting force to the shielding ring 20 through the abutment surface 121, thereby effectively supporting the shielding ring 20. The weight of the shielding ring 20 can be transferred to the wafer carrier device 50 through the support post 1321, thereby preventing the suspended area of ​​the deposition ring outside the support post 1321 from being crushed by the shielding ring 20.

[0048] It should be noted that in this embodiment, there are three support columns 1321, but this is not limiting. In some other embodiments not shown in the figure, there may be two, four, five, etc., support columns 1321, which are not limited here.

[0049] like Figures 3 to 5 As shown, the annular portion 131 is connected to the outer periphery of the bottom of the support portion 12. The bottom of the support portion 12 is provided with a relief groove 123, which is located inside the annular portion 131. The outer periphery of the support portion 12 is provided with a limiting groove 124 that corresponds to and communicates with the relief groove 123.

[0050] like Figure 9 As shown, during assembly, the clearance groove 123 and the limiting groove 124 can be detachably connected to the limiting member 54 in the process assembly. The limiting member 54 is vertically positioned with the wafer carrier 50 to prevent the deposition ring 10 from detaching from the wafer carrier 50 during its ascent. In other words, even if the deposition ring 10 adheres to the shielding ring 20, the limiting groove 124 and the limiting member 54 can restrict the deposition ring 10 from rising relative to the wafer carrier 50 when the wafer carrier 50 descends. This allows the deposition ring 10 to descend with the wafer carrier 50, thereby releasing it from adhesion to the shielding ring 20 and preventing collision with the wafer 80.

[0051] For example, such as Figure 3 As shown, the clearance groove 123 and the limiting groove 124 ( Figure 3(Not shown in the image) There are three sets of grooves, each corresponding to the other and connected. The three sets of clearance grooves 123 and limiting grooves 124 are arranged at intervals along the circumference of the deposition ring 10, which can disperse stress. Therefore, the deposition ring 10 is subjected to more uniform force, making the limiting effect more stable.

[0052] It should be noted that, in this embodiment, although there are three clearance slots 123 and three limiting slots 124, this is not a limitation. In some other embodiments not shown in the figure, there may be two, four, five, etc. clearance slots 123 and three limiting slots 124. This is not a limitation here.

[0053] It should also be noted that, in cases such as Figure 6 In another embodiment shown, a deposition ring 10 is also disclosed, which has the same structure as the above embodiment. The difference is that in this embodiment, there is no clearance groove 123 and a limiting groove 124. Instead, a limiting structure 1311 is provided on the annular portion 131. By adopting this method, the step of providing clearance groove 123 on the supporting portion 12 can be eliminated, simplifying the manufacturing process of the deposition ring 10.

[0054] For example, the limiting structure 1311 may be a through hole radially penetrating the annular portion 131. Further, there may be multiple limiting structures 1311, which are circumferentially spaced on the annular portion 131. In this embodiment, there are three limiting structures 1311, but this is not limiting. In some other embodiments not shown in the figures, there may be two, four, five, etc., limiting structures 1311, and this is not a limitation here.

[0055] In this embodiment, by providing an annular portion 131 and connecting the support portion 132 to the inner side of the annular portion 131, the support portion 132 and the annular portion 131 can form an integral whole, thereby supporting each other and improving the overall strength.

[0056] In some embodiments, such as Figure 3 and Figure 4 As shown, the deposition tank 11, the support portion 12, and the bottom ring 13 are integrally formed. By connecting the deposition tank 11, the support portion 12, and the bottom ring 13 to form a whole, the overall strength of the deposition ring 10 is improved.

[0057] In some embodiments, the outer periphery of the support portion 12 is provided with a first guide surface 125 for guiding and engaging with the shielding ring 20. By providing the first guide surface 125, the shielding ring 20 can be guided, thereby making it easier for the shielding ring 20 and the deposition ring 10 to achieve positioning and engagement. In this embodiment, the first guide surface 125 forms a first angle A1 with the vertical direction, and the value of the first angle A1 is in the range of 3°-60°. For example, the first angle A1 can be 3°, 10°, 15°, 20°, 25°, 30°, 45°, 60°, etc.

[0058] like Figure 4 As shown, the width of the sedimentation tank 11 in the radial direction of the sedimentation ring 10 is D1, and the thickness of the bottom wall 113 of the sedimentation tank 11 is D2, where 2≤D2 / D1≤8.

[0059] like Figure 4 As shown, in this embodiment, the deposition tank 11 is annular and located at the top of the deposition ring 10. Therefore, the radial direction of the deposition tank 11 is the same as the radial direction of the deposition ring 10. In other words, the width D1 of the deposition tank 11 in the radial direction of the deposition ring 10 is the same as the radial width of the deposition tank 11. Figure 4 As shown, the thickness D2 of the bottom wall 113 of the deposition tank 11 is equivalent to the thickness of the deposition ring 10 at the bottom of the deposition tank 11. At the bottom of the deposition tank 11, i.e., at the bottom wall 113, the deposition ring 10 is relatively thin and has lower strength. Under the stress of the target particle deposits, it is prone to fracture at the bottom of the deposition tank 11. By limiting the radial width D1 of the deposition tank 11 of the deposition ring 10 and the thickness D2 of the bottom wall 113 of the deposition tank 11, making the range of D2 / D1 2 ≤ D2 / D1 ≤ 8, the thickness of the deposition ring 10 at the bottom of the deposition tank 11 is increased to improve strength. Simultaneously, as the dimension D1 increases, D2 also increases with the increase in the width D1 of the deposition tank 11. This allows the deposition tank 11 to accommodate a sufficient number of target particles while maintaining high strength, enabling it to withstand the stress of more target particles and even target particle materials with higher stress levels. In some preferred embodiments, the range of D2 / D1 is 4 ≤ D2 / D1 ≤ 6.

[0060] The deposition ring of this invention limits the value range of D2 / D1 to a certain range, which on the one hand increases the thickness of the bottom of the deposition tank 11, thereby improving the strength of the deposition ring 10 at the position of the deposition tank 11. Moreover, as the size of D1 increases, D2 will also increase with the increase of the width D1 of the deposition tank 11. This allows the deposition tank 11 to have high strength while accommodating a sufficient number of target particles, and can withstand the stress of more target particles, as well as target particle materials with higher stress. Even if the maintenance cycle is extended, the deposition ring will not be damaged.

[0061] For example, in such Figure 4 As shown, arc-shaped transition surfaces are formed at the connection points of the first convex ring portion 111 and the bottom wall 113, and at the connection points of the second convex ring portion 112 and the bottom wall 113. By providing arc-shaped transition surfaces, the connection strength between the first convex ring portion 111 and the bottom wall 113, and the connection strength between the second convex ring portion 112 and the bottom wall 113, can be increased, thereby improving the overall strength of the deposition ring 10. The deposition ring 10 can mate with the wafer 80 through the first convex ring portion 111, and can also have a clearance fit with the shielding ring 20 through the second convex ring portion 112, thereby extending the service life of the deposition ring 10.

[0062] The following section will further explain the cooperation between the deposition ring 10, the wafer carrier device 50, the wafer 80, and the shielding ring 20, based on specific application scenarios of the deposition ring 10.

[0063] According to a second aspect of this utility model, a process assembly is also disclosed for use with a wafer carrier 50 in a process chamber, such as... Figure 7 As shown, the process components include: the aforementioned deposition ring 10 and shielding ring 20, with the shielding ring 20 being fitted onto the outer periphery of the deposition ring 10.

[0064] like Figures 7 to 9 As shown, the shielding ring 20 includes an annular shielding portion 21 and an abutting portion 22. The abutting portion 22 abuts against the abutting surface 121 of the shielding ring 20; the inner periphery of the annular shielding portion 21 is located above the deposition tank 11, and the outer periphery of the annular shielding portion 21 is connected to the abutting portion 22. The annular shielding portion 21 has a first mating surface 211, which is located inside the abutting portion 22 and faces the deposition ring 10. The first mating surface 211 and the top surface of the second convex ring portion 112 form a first gap 41. The length of the first gap 41 in the radial direction of the deposition ring 10 is D3, and the height of the first gap 41 in the vertical direction is D4, where D3 / D4 > 2.

[0065] like Figures 7 to 9 As shown, the length of the first gap 41 in the radial direction of the deposition ring 10 is D3. Since the radial dimension of the first mating surface 211 is greater than the radial dimension of the top surface of the second convex ring 112, the radial dimension of the top surface of the second convex ring 112 determines the radial width of the first gap 41. In other words, the radial dimension of the top surface of the second convex ring 112 is equivalent to the length D3 of the first gap 41 in the radial direction of the deposition ring 10. The distance between the first mating surface 211 and the top surface of the second convex ring 112 is D4.

[0066] For example, such as Figures 7 to 9As shown, when the wafer carrier 50 rises to the process position, the deposition ring 10 and the shielding ring 20 are in a mutually abutting position, thereby forming a process space 70 within the chamber body. At this time, the annular shielding portion 21 is disposed above the deposition ring 10, and the abutting portion 22 is connected to the side of the annular shielding portion 21 facing the deposition ring 10. The annular shielding portion 21 abuts against the abutting surface 121 of the deposition ring 10 through the abutting portion 22, thereby achieving support. The abutting surface 121 is located outside the second convex ring portion 112. In other words, the first gap 41 is located inside the abutting surface 121 and the abutting portion 22. Therefore, the first gap 41 is located between the process space 70 and the abutting portion 22, which can block the target particles and prevent the target particles from diffusing to the outside of the second convex ring portion 112.

[0067] However, in some related technologies, although a structure similar to the first gap 41 exists, the vertical height of the first gap 41 is too large, or the radial length is insufficient. Therefore, target particles can still pass through the first gap 41, causing the contact portion 22 to adhere to the contact surface 121. In the embodiments of this utility model, by limiting the ratio of the length to the radial height of the first gap 41, the first gap 41 becomes more elongated, thereby increasing the difficulty for target particles to pass through the first gap 41. This effectively ensures that target particles do not deposit excessively on the contact portion 22 or the contact surface 121, thereby reducing the overflow of target particles during the process, preventing adhesion between the two, and avoiding particle contamination. In some embodiments, D4 ≤ 1 mm, thereby reducing the probability of target particles passing through the first gap 41.

[0068] In some preferred embodiments, D3 / D4≥4 and 0.1mm≤D4≤0.6mm can greatly reduce the probability of target particles passing through the first gap 41.

[0069] like Figure 8 As shown, a second gap 42 is formed between the outer peripheral wall of the second convex ring portion 112 and the inner peripheral wall of the abutment portion 22, which communicates with the annular groove 122. The first gap 41 communicates with the second gap 42, and the first gap 41, the second gap 42 and the annular groove 122 form a labyrinth structure.

[0070] like Figure 7 As shown, on the outside of the first gap 41, an annular groove 122 is provided on the deposition ring 10. After the abutting part 22 abuts against the abutting surface 121, a portion of the abutting part 22 is located at the opening of the annular groove 122, thereby forming a labyrinth structure. This, together with the first gap 41, can further reduce the occurrence of target particle overflow. Moreover, since a portion of the abutting part 22 is located at the opening of the annular groove 122, it is difficult for target particles to enter the abutting position between the abutting part 22 and the abutting surface 121, thereby effectively reducing the overflow of target particles during the process and preventing the two from sticking together.

[0071] For example, the radial length of the abutment portion 22 at the opening of the annular groove 122 is D5, and the distance between the abutment portion 22 and the bottom of the annular groove 122 is D6, where D5 / D6≥2 and D6≤1mm. In some preferred embodiments, D5 / D6≥4 and 0.1mm≤D6≤0.6mm.

[0072] It should be noted that in this embodiment, both the first gap 41 and the annular groove 122 are horizontal, but this is not limiting. In some other embodiments not shown in the figure, the first gap 41 and the annular groove 122 can also be vertical, inclined, or a combination of the above. The first mating surface 211, the top surface of the second convex ring 112, and the inner surface of the annular groove 122 can be straight surfaces, curved surfaces, or a combination of the above. This is not limited here.

[0073] It should also be noted that in this embodiment, the annular groove 122 is disposed on the deposition ring 10, but this is not limiting. In some other embodiments not shown in the figure, the annular groove 122 may also be disposed on the shielding ring 20, or partially disposed on the deposition ring 10 and partially disposed on the shielding ring 20. This is not a limitation.

[0074] like Figure 7 As shown, the shielding ring 20 also includes a shielding cover 23. The shielding cover 23 includes a third protruding ring portion 231 located on the inner side, a fourth protruding ring portion 232 located on the outer side, and a top wall 233 between the third protruding ring portion 231 and the fourth protruding ring portion 232. The third protruding ring portion 231 is connected to the abutment portion 22. By providing the shielding cover 23, as... Figure 7 As shown, the shield 23 can be fitted with the inner liner to form a labyrinth gap structure, reducing the leakage of process gases.

[0075] In some embodiments, the inner peripheral wall of the third convex ring portion 231 is positioned and engaged with the outer peripheral wall of the deposition ring 10 to make the shielding ring 20 concentric with the deposition ring 10. This, in turn, makes the shielding ring 20 concentric with the wafer 80. By positioning and engaging the inner peripheral wall of the third convex ring portion 231 with the outer peripheral wall of the deposition ring 10, the deposition ring 10 and the guide ring can be positioned more precisely, improving their concentricity with the wafer 80.

[0076] like Figure 7As shown, the outer periphery of the bearing portion 12 is provided with a first guide surface 125 for guiding and engaging with the inner peripheral wall of the third convex ring portion 231. The first guide surface 125 and the inner peripheral wall of the third convex ring portion 231 are in clearance fit, and the distance D7 between the first guide surface 125 and the inner peripheral wall of the third convex ring portion 231 ranges from 0.02 to 3 mm. As previously stated, in this embodiment, the first guide surface 125 forms a first included angle A1 with the vertical direction, and the value of the first included angle A1 ranges from 3° to 60°. For example, the first included angle A1 can be 3°, 10°, 15°, 20°, 25°, 30°, 45°, 60°, etc.

[0077] In some related technologies, although a guiding mechanism is also provided, this mechanism can usually only guide the engagement of the deposition ring 10 and the shielding ring 20, but cannot guide the shielding ring 20 to be concentric with the wafer 80. This results in an inconsistent gap between the inner periphery of the shielding ring 20 and the outer periphery of the wafer 80, causing poor process uniformity at the edge of the wafer 80. Moreover, for the fabrication of certain metal thin films, the inner diameter of the shielding ring 20 should be close to that of the wafer 80. If the shielding ring 20 is not concentric with the wafer 80, the portion of the shielding ring 20 closest to the wafer 80 will experience gas breakdown in the plasma environment, causing arcing and damage to the wafer 80. The longer the work cycle, the more target particles are deposited on the inner periphery of the shielding ring 20. When the shielding ring 20 is not concentric with the wafer 80, the closest position between the shielding ring 20 and the wafer 80 becomes closer due to the deposition of target particles, until it comes into contact with the wafer 80, that is, the shielding ring 20 and the wafer 80 adhere to each other, causing damage to the wafer 80.

[0078] In the embodiments of this utility model, the value of the first included angle A1 is in the range of 3°-60°, which makes it easier for the first guide surface 125 and the inner peripheral wall of the third convex ring 231 to slide relative to each other. In some preferred embodiments, the value of the first included angle A1 is in the range of 10°-20°, 0.1mm≤D7≤0.6mm, which can maximize the precise positioning of the deposition ring 10, effectively avoid adhesion caused by the non-concentricity of the deposition ring 10 and the wafer 80, and at the same time ensure the uniformity of the edge of the wafer 80.

[0079] In some embodiments, a coating of soft metal or easily deformable metal, such as aluminum or aluminum alloy, is provided on the inner wall of the deposition tank 11. Taking advantage of the easily deformable nature of the soft material, it serves as a buffer layer when depositing high-stress target particles to prevent the target particles from falling off and to avoid contamination of the wafer 80.

[0080] According to a third aspect of the present invention, a process chamber is also disclosed, comprising: a chamber body, a wafer carrier 50 and an upper process component, wherein the wafer carrier 50 and the process component are both disposed within the chamber body, and the process component is used to cooperate with the wafer carrier 50 and the inner liner component to form a process space 70.

[0081] like Figure 7 As shown, the wafer carrier device 50 includes a chuck 51 and a base 52. The base 52 is disposed below the chuck 51 to support the chuck 51. The diameter of the chuck 51 is smaller than the diameter of the base 52. A deposition ring 10 is disposed on the base 52 and surrounds the chuck 51. The inner peripheral wall of the deposition ring 10 abuts against the outer peripheral wall of the chuck 51. The support portion 132 of the deposition ring 10 is supported on the outer peripheral side of the base 52. A receiving space 30 is formed between the deposition ring 10 and the base 52. A pressure ring 90 is disposed on the base 52 and located within the receiving space 30. Furthermore, an annular boss 511 is provided at the bottom of the outer peripheral wall of the chuck 51. The pressure arm of the pressure ring 90 presses against the annular boss 511, thereby pressing the chuck 51 onto the base 52.

[0082] like Figure 7 As shown, during the process, the distance between the outer periphery of the wafer 80 and the first convex ring 111 of the deposition tank 11 is D8, 0.1mm≤D8≤5mm. In some preferred embodiments, the value of D8 is 1mm≤D8≤3mm, which can prevent the target particles falling on the surface of the first convex ring 111 of the deposition chamber from adhering to the wafer 80.

[0083] like Figure 9 As shown, the wafer carrier 50 also includes a limiting member 54. The limiting member 54 is connected to the base 52 and detachably connected to the limiting groove 124, so that the deposition ring 10 is vertically positioned with the wafer carrier 50 through the limiting member 54, thereby preventing the deposition ring 10 from detaching from the wafer carrier 50 during upward movement. By providing the cooperation between the limiting groove 124 and the limiting member 54, the limiting member 54 can restrict the deposition ring 10 from rising relative to the wafer carrier 50 when the wafer carrier 50 descends, so that the deposition ring 10 descends together with the wafer carrier 50, thereby releasing the adhesion state with the shielding ring 20 and avoiding collision with the wafer 80.

[0084] For example, the limiting member 54 is a hook. The hook includes a connecting plate 541, a vertical plate 542, and a locking plate 543. The connecting plate 541 is connected to the bottom of the vertical plate 542, and the locking plate 543 is connected to the top of the vertical plate 542 in a Z-shape. The hook is fixedly connected to the base 52 through the connecting plate 541. The locking plate 543 is located in the limiting hole and engages with the bottom wall of the limiting hole in the vertical direction, thereby preventing the sedimentation tank 11 from rising and detaching from the base 52.

[0085] It should be noted that the vertical plate 542 is elastic and is located on the outer periphery of the base 52. There is a certain distance between the vertical plate 542 and the outer periphery of the base 52. Therefore, the clamping plate 543 can be disengaged from the limiting hole by pushing the vertical plate 542 towards the outer periphery of the base 52. After the external force is removed, the clamping plate 543 can be reset under the elastic action of the vertical plate 542, so that the clamping plate 543 can enter the limiting hole, thereby facilitating the installation and removal of the deposition ring 10.

[0086] In this embodiment, the hooks and limiting holes are set in a one-to-one correspondence to ensure the stability of the limiting.

[0087] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this utility model, and the utility model is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of this utility model, and these modifications and improvements are also considered to be within the protection scope of this utility model.

Claims

1. A deposition ring (10) for use in a process chamber, characterized in that, The deposition ring (10) includes: The deposition tank (11) includes a first convex ring portion (111) located on the inner side, a second convex ring portion (112) located on the outer side, and a bottom wall (113) between the first convex ring portion (111) and the second convex ring portion (112); The support portion (12) is located outside the deposition tank (11). The top of the support portion (12) has an abutment surface (121). The plane where the abutment surface (121) is located is lower than the top of the second convex ring portion (112). An annular groove (122) is formed on the abutment surface (121).

2. The deposition ring (10) according to claim 1, characterized in that, The width of the deposition tank (11) in the radial direction of the deposition ring (10) is D1, and the thickness of the bottom wall (113) of the deposition tank (11) is D2, where 2≤D2 / D1≤8.

3. The deposition ring (10) according to claim 2, characterized in that, The annular groove (122) is located near the second convex ring (112).

4. The deposition ring (10) according to claim 1, characterized in that Also includes: The bottom ring (13) includes an annular portion (131) and a support portion (132). The annular portion (131) is connected to the bottom of the bearing portion (12), and the support portion (132) is connected to the inner peripheral wall of the annular portion (131) to support the bearing portion (12).

5. The deposition ring (10) according to claim 4, characterized in that The support portion (132) includes: At least three support columns (1321) are provided, all of which are spaced apart in the circumferential direction of the deposition ring (10). The top of each support column (1321) is connected to the bottom of the support portion (12), and the outer side of each support column (1321) is connected to the inner side of the annular portion (131).

6. The deposition ring (10) according to claim 4, characterized in that, The annular portion (131) is connected to the outer periphery of the bottom of the support portion (12). The bottom of the support portion (12) is provided with a relief groove (123). The relief groove (123) is located inside the annular portion (131). The outer periphery of the support portion (12) is provided with a limiting groove (124) that corresponds to and communicates with the relief groove (123).

7. The deposition ring (10) according to claim 6, characterized in that, There are multiple limiting grooves (124), which are arranged at intervals along the circumference of the deposition ring (10). There are multiple clearance grooves (123) that correspond one-to-one with the limiting grooves (124), and the clearance grooves (123) are connected to the corresponding limiting grooves (124).

8. The deposition ring (10) according to claim 4, characterized in that, A limiting structure (1311) is provided on the annular portion (131).

9. The deposition ring (10) according to claim 4, characterized in that, The deposition tank (11), the support part (12), and the bottom ring (13) are integrally formed structures.

10. The deposition ring (10) according to claim 7, characterized in that, The outer periphery of the bearing part (12) is provided with a first guide surface (125) for guiding and fitting. The first guide surface (125) forms a first angle A1 with the vertical direction. The value of the first angle A1 is 3°-60°.

11. A process kit for use in a process chamber, comprising: The process components include: a deposition ring (10) and a shielding ring (20) according to any one of claims 1 to 10, wherein the shielding ring (20) is used to be sleeved on the outer periphery of the deposition ring (10).

12. The process kit of claim 11, wherein, The shielding ring (20) includes: The contact part (22) abuts against the contact surface (121) of the shielding ring (20); An annular shielding part (21) has its inner periphery located above the deposition tank (11). The outer periphery of the annular shielding part (21) is connected to the abutment part (22). A first gap (41) is formed between the bottom of the annular shielding part (21) and the top of the second convex ring part (112). The length of the first gap (41) in the radial direction of the deposition ring (10) is D3, and the height of the first gap (41) in the vertical direction is D4, where D3 / D4 > 2.

13. The process component according to claim 12, characterized in that, A second gap (42) communicating with the annular groove (122) is formed between the outer peripheral wall of the second convex ring portion (112) and the inner peripheral wall of the abutting portion (22). The first gap (41) and the second gap (42) communicate with each other. The first gap (41), the second gap (42) and the annular groove (122) form a labyrinth structure.

14. The process kit of claim 12, wherein, The shielding ring (20) also includes: The shield (23) includes a third protruding ring portion (231) located on the inner side, a fourth protruding ring portion (232) located on the outer side, and a top wall (233) between the third protruding ring portion (231) and the fourth protruding ring portion (232), wherein the third protruding ring portion (231) is connected to the abutting portion (22).

15. The process component according to claim 14, characterized in that, The inner peripheral wall of the third convex ring (231) is positioned and engaged with the outer peripheral wall of the deposition ring (10) so that the shielding ring (20) is concentric with the deposition ring (10).

16. The process component according to claim 15, characterized in that, The outer periphery of the bearing portion (12) is provided with a first guide surface (125) for guiding and engaging with the inner peripheral wall of the third convex ring portion (231). The first guide surface (125) and the inner peripheral wall of the third convex ring portion (231) are in clearance engagement. The distance D7 between the first guide surface (125) and the inner peripheral wall of the third convex ring portion (231) is in the range of 0.02≤D7≤3mm.

17. The process kit of claim 11, wherein, The deposition ring (10) also includes: The bottom ring (13) includes an annular portion (131) and a support portion (132), wherein the support portion (132) is connected to the inner peripheral wall of the annular portion (131), and the support portion (132) is used to support the carrier so that a receiving space (30) is formed between the bottom wall (113) of the deposition tank (11) and the carrier; The process components also include: A pressure ring (90) is disposed within the receiving space (30).

18. A process chamber, characterized in that, include: The chamber body, the wafer carrier (50), and the process assembly according to any one of claims 11 to 17, wherein the wafer carrier (50) and the process assembly are both disposed within the chamber body.

19. The process chamber of claim 18, wherein, The wafer carrier device (50) includes: A chuck (51) is provided, and the deposition ring (10) is disposed around the chuck (51); The base (52) on which the deposition ring (10) is supported.

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