Monocrystalline silicon production and processing equipment

Abstract

The utility model discloses monocrystalline silicon production and processing equipment which comprises a lower furnace chamber and an upper furnace chamber, a crucible is fixed in the lower furnace chamber, and an electric heater is mounted between the crucible and the inner wall of the lower furnace chamber; according to the utility model, the spiral heat exchange pipe is arranged on the inner wall of the upper furnace chamber and is communicated with the snake-shaped heat exchange pipe in the preheating box, the water pump in the water tank is started to enable the water pump to pump water in the water tank into the snake-shaped heat exchange pipe, then the water is guided into the spiral heat exchange pipe through the snake-shaped heat exchange pipe, and the spiral heat exchange pipe absorbs heat of the upper furnace chamber; and then the heat is diffused into the preheating box through a plurality of heat conduction fins arranged on the surface of the S-shaped heat exchange pipe in parallel, and the fluidity of air in the preheating box is maintained through an air blower, so that the heat dissipated by the heat conduction fins can be fully diffused, and preheating treatment of the polycrystalline silicon raw materials in the material storage drawer is facilitated. Reasonable utilization of heat energy of the upper furnace chamber is achieved, crystal cooling is accelerated, and preheating of polycrystalline silicon raw materials is easy.

Description

Technical Field

[0001] This utility model relates to the field of monocrystalline silicon production and processing technology, and in particular to monocrystalline silicon production and processing equipment. Background Technology

[0002] Monocrystalline silicon is the substrate material for most semiconductor devices. The production of monocrystalline silicon involves six processing steps: charging, melting, necking growth, shoulder growth, constant diameter growth, and tail growth. Polycrystalline silicon material is melted in a quartz crucible. Then, a seed crystal is brought into contact with the melt, allowing the molten silicon at the solid-liquid interface to cool and crystallize along the seed crystal. Growth is achieved by slowly pulling out the seed crystal. After necking, the crystal growth diameter is increased by reducing the pulling speed and melt temperature until the target diameter is reached. After shouldering, the crystal growth enters the "constant diameter growth" stage by controlling the pulling speed and melt temperature. Finally, the diameter of the crystal growth surface is gradually reduced by increasing the pulling speed and melt temperature to form a tail cone until the crystal leaves the melt surface, thus completing the growth of the monocrystalline silicon rod.

[0003] When using crystal pulling furnaces for monocrystalline silicon production, the internal cooling measures are generally inert gas or water cooling. However, this single cooling method has a low cooling effect and cannot fully cool the monocrystalline silicon. During the cooling process, the heat of the crystal cannot be recovered and utilized. Furthermore, there is no preheating structure for polycrystalline silicon raw materials, resulting in significant energy consumption during the process of raising the polycrystalline silicon in the crucible from room temperature to melting.

[0004] To address this, a monocrystalline silicon production and processing equipment has been proposed, which has the advantages of accelerating crystal cooling, preheating raw materials, and reducing energy consumption, thereby solving the problems mentioned in the background technology. Utility Model Content

[0005] The purpose of this invention is to address the shortcomings of existing technologies by proposing a single-crystal silicon production and processing equipment.

[0006] To achieve the above objectives, this utility model adopts the following technical solution: a monocrystalline silicon production and processing equipment, including a lower furnace chamber and an upper furnace chamber. A crucible is fixed inside the lower furnace chamber, and an electric heater is installed between the crucible and the inner wall of the lower furnace chamber. The upper furnace chamber is installed on the top of the lower furnace chamber, and an isolation valve is installed at the connection between the lower and upper furnace chambers. A lifting and rotating mechanism is fixedly installed on the top of the upper furnace chamber, and a suspension wire extending to the upper furnace chamber is provided inside the lifting and rotating mechanism. A seed crystal is fixedly installed at the bottom end of the suspension wire through a clamp, and the seed crystal is suspended and installed on... Above the crucible in the lower furnace chamber, a preheating box is fixed on the right side of the top surface of the upper furnace chamber, and a serpentine heat exchange tube is installed on the inner wall of the preheating box. A spiral heat exchange tube is installed on the inner wall of the upper furnace chamber, and the spiral heat exchange tube and the serpentine heat exchange tube are connected by a flange. A water tank is installed on the lower surface of the serpentine heat exchange tube, and a water pump connected to the serpentine heat exchange tube is installed inside the water tank. A receiving shell is fixedly installed on the top of the water tank, and a material storage drawer is pulled out and installed inside the receiving shell. Several heat-conducting fins are welded and installed on the surface of the serpentine heat exchange tube corresponding to the receiving shell.

[0007] As a further description of the above technical solution: a horn cover is welded to the lower inner side of the upper furnace chamber, and the horn cover is inverted as a whole. The small opening at the top of the horn cover extends to the inner side of the spiral heat exchange tube. Two mounting holes are opened on the right side wall of the upper furnace chamber corresponding to the spiral heat exchange tube.

[0008] As a further description of the above technical solution: several columns are welded and installed between the water tank and the housing shell, and a water inlet is provided at the corner of the top surface of the water tank.

[0009] As a further description of the above technical solution: the housing is U-shaped, and a set of slide rails is provided on each side of the inner wall of the housing. Slide bars that are slidably connected to the slide rails are provided on the left and right sides of the storage drawer.

[0010] As a further description of the above technical solution: the side wall of the upper furnace chamber is connected to an inert gas injection nozzle, and the right side wall of the lower furnace chamber is connected to a vacuum pump, which is connected to an external vacuum pump.

[0011] As a further description of the above technical solution: a blower is embedded in the left side wall of the preheating box, and the air outlet of the blower is set towards the heat-conducting fins. Several round holes are opened on the surface of several heat-conducting fins, and two adjacent heat-conducting fins are arranged in parallel.

[0012] As a further description of the above technical solution: the surface of the preheating box is coated with a polyurethane insulation coating, and the surface of the preheating box is fitted with a door by hinges.

[0013] This utility model has the following beneficial effects:

[0014] In this invention, a spiral heat exchange tube is installed on the inner wall of the upper furnace chamber, and the spiral heat exchange tube is connected to a serpentine heat exchange tube in the preheating box. By starting the water pump in the water tank, the water in the water tank is pumped into the serpentine heat exchange tube, and then guided into the spiral heat exchange tube. The spiral heat exchange tube absorbs the heat from the upper furnace chamber, and then the heat is diffused into the preheating box through several heat-conducting fins arranged parallel to each other on the surface of the serpentine heat exchange tube. The air flow inside the preheating box is maintained by a blower, so that the heat emitted by the heat-conducting fins can be fully diffused, so as to preheat the polycrystalline silicon raw material in the storage drawer. Compared with the prior art, this invention not only realizes the rational utilization of the heat energy in the upper furnace chamber and accelerates crystal cooling, but also facilitates the preheating of polycrystalline silicon raw material and reduces the energy consumption of the furnace body.

[0015] In this invention, a horn cover is welded and installed on the lower side of the upper furnace chamber, and the small opening at the top of the horn cover extends to the inside of the spiral heat exchange tube. When the suspension wire lifts the crystal through the clamp and the seed crystal, the horn cover can provide guidance for the crystal, so that the crystal can accurately extend into the inside of the spiral heat exchange tube, avoiding the situation where the crystal collides with the spiral heat exchange tube and causes leakage of the internal medium, thereby improving the safety and reliability of the furnace body. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the monocrystalline silicon production and processing equipment of this utility model;

[0017] Figure 2 This is a schematic diagram of the internal structure of the preheating box;

[0018] Figure 3 This is an internal sectional view of the preheating chamber (without the housing shell installed);

[0019] Figure 4 A three-dimensional diagram of the containing shell;

[0020] Figure 5 This is a schematic diagram of the upper furnace chamber.

[0021] Legend:

[0022] 1. Lower furnace chamber; 2. Upper furnace chamber; 3. Crucible; 4. Electric heater; 5. Seed crystal; 6. Lifting and rotating mechanism; 7. Inert gas injection nozzle; 8. Spiral heat exchange tube; 9. Isolation valve; 10. Vacuum pipe; 11. Preheating box; 12. Box door; 13. Serpentine heat exchange tube; 14. Heat-conducting fins; 15. Water tank; 16. Housing shell; 17. Slide rail; 18. Material storage drawer; 19. Water pump; 20. Water inlet; 21. Blower; 22. Sliding strip; 23. Horn cover; 24. Suspension line; 25. Mounting hole. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0024] According to an embodiment of the present invention, a monocrystalline silicon production and processing equipment is provided.

[0025] The present invention will now be further described in conjunction with the accompanying drawings and specific embodiments, such as... Figure 1-5 As shown, the monocrystalline silicon production and processing equipment according to an embodiment of the present invention includes a lower furnace chamber 1 and an upper furnace chamber 2. A crucible 3 is fixed inside the lower furnace chamber 1, and an electric heater 4 is installed between the crucible 3 and the inner wall of the lower furnace chamber 1. The upper furnace chamber 2 is installed on the top of the lower furnace chamber 1, and an isolation valve 9 is installed at the connection between the lower furnace chamber 1 and the upper furnace chamber 2. A lifting and rotating mechanism 6 is fixedly installed on the top of the upper furnace chamber 2, and a suspension wire 24 extending to the upper furnace chamber 2 is provided inside the lifting and rotating mechanism 6. A seed is fixedly installed at the bottom end of the suspension wire 24 through a clamp. Seed crystal 5 is suspended above crucible 3 in lower furnace chamber 1. A preheating box 11 is fixed to the right side of the top surface of upper furnace chamber 2, and a serpentine heat exchange tube 13 is installed on the inner wall of the preheating box 11. A spiral heat exchange tube 8 is installed on the inner wall of upper furnace chamber 2, and the spiral heat exchange tube 8 is connected to the serpentine heat exchange tube 13 via a flange. A water tank 15 is installed on the lower surface of the serpentine heat exchange tube 13, and a water pump 19 connected to the serpentine heat exchange tube 13 is installed inside the water tank 15. A receiving shell 16 is fixedly installed on the top of the water tank 15, and it contains... A material storage drawer 18 is installed inside the shell 16 by a pull-out mechanism. Several heat-conducting fins 14 are welded and installed on the surface of the serpentine heat exchange tube 13 corresponding to the shell 16. The lower furnace chamber 1 and the upper furnace chamber 2 are specifically monocrystalline silicon growth furnaces. The rising and rotating mechanism 6 includes a winding motor for winding the lifting wire 24 (steel cable) and a rotating motor for rotating the monocrystalline silicon. It is a well-known structure of monocrystalline silicon growth furnaces and will not be described in detail. The monocrystalline silicon growth furnace is also equipped with a control system for controlling the start-up of the electric heater 4 and the rising and rotating mechanism 6. In this patent, we only use it without improving its structure and function. Its setting method, installation method and electrical connection method can be debugged and operated by those skilled in the art as long as they follow the requirements of its instruction manual. Therefore, we will not go into details here. The feeding and discharging of the crystal are based on the crucible 3. The feeding port and discharging port of the furnace body are located at the top and bottom of the crucible 3 respectively (not shown in the figure, but it is a conventional structure of single crystal silicon growth furnace, and we will not go into details).

[0026] In one embodiment, a horn cover 23 is welded to the lower inner side of the upper furnace chamber 2, and the horn cover 23 is inverted. The small opening at the top of the horn cover 23 extends to the inner side of the spiral heat exchange tube 8. Two mounting holes 25 are opened on the right side wall of the upper furnace chamber 2 corresponding to the spiral heat exchange tube 8. With this structure, the crystal can be accurately inserted into the inner side of the spiral heat exchange tube 8, avoiding the situation where the crystal collides with the spiral heat exchange tube 8 and causes leakage of the internal medium.

[0027] In one embodiment, several columns are welded and installed between the water tank 15 and the housing shell 16, and a water inlet 20 is provided at the corner of the top surface of the water tank 15. With this structure, it is easy to install and support the housing shell 16, and it is convenient to add new water through the water inlet 20.

[0028] In one embodiment, the housing 16 is U-shaped, and a set of slide rails 17 is provided on each side of the inner wall of the housing 16. Slide strips 22 that are slidably connected to the slide rails 17 are provided on the left and right sides of the storage drawer 18. With this structure, the storage drawer 18 is easy to pull out and move, and the storage drawer 18 is easy to load and unload.

[0029] In one embodiment, the side wall of the upper furnace chamber 2 is connected to an inert gas injection nozzle 7, and the right side wall of the lower furnace chamber 1 is connected to a vacuum pipe 10, which is connected to an external vacuum pump. With this structure, the upper furnace chamber 2 can be cooled by air isolation through inert gas, and the vacuum pipe 10 and the external vacuum pump can achieve a vacuum state in the lower furnace chamber 1, which is beneficial to improving the quality of monocrystalline silicon production.

[0030] In one embodiment, a blower 21 is embedded in the left side wall of the preheating box 11, and the air outlet of the blower 21 is set towards the heat-conducting fins 14. Several round holes are opened on the surface of several heat-conducting fins 14, and two adjacent heat-conducting fins 14 are arranged in parallel. The setting of the blower 21 helps to accelerate the air flow inside the preheating box 11 and increase the temperature constantness of each area. The setting of several heat-conducting fins 14 makes it easy to increase the heat conduction effect, which is beneficial to the rapid preheating of polycrystalline silicon raw materials.

[0031] In one embodiment, the surface of the preheating box 11 is coated with a polyurethane insulation coating, and the surface of the preheating box 11 is hinged to a door 12. This structure facilitates the insulation of the preheating box 11 and the handling of polycrystalline silicon raw materials.

[0032] Working principle:

[0033] In operation, the electric heater 4 in the lower furnace chamber 1 is first turned on, heating and melting the polycrystalline silicon raw material in the crucible 3. The seed crystal 5, installed at the bottom of the suspension wire 24 via a clamp, is immersed in the molten polycrystalline silicon raw material, allowing the molten silicon at the solid-liquid interface to cool and crystallize along the seed crystal 5. The seed crystal 5 is then slowly pulled out by the rising and rotating mechanism 6 to grow. The water pump 19 in the water tank 15 is then activated, causing the water to flow into the serpentine heat exchange tube 13. From there, the water is guided into the spiral heat exchange tube 8. The spiral heat exchange tube 8 absorbs the heat from the upper furnace chamber 2, and then the heat is diffused to the preheating box 11 through several parallel heat-conducting fins 14 on the surface of the serpentine heat exchange tube 13. Inside, the airflow inside the preheating box 11 is maintained by the blower 21, so that the heat radiated by the heat-conducting fins 14 can be fully diffused for the preheating treatment of polysilicon raw materials in the storage drawer 18. When polysilicon raw materials are taken out, the box door 12 of the preheating box 11 is opened, and then the storage drawer 18, which is slidably installed in the receiving shell 16, is pulled out. Then, the polysilicon raw materials can be put into the crucible 3 through the furnace opening set on the surface of the lower furnace chamber 1 shell. At the same time, when the lifting wire 24 lifts the crystal through the clamp and the seed crystal 5, the horn cover 23 can provide guidance for the crystal, so that the crystal can accurately extend into the inner side of the spiral heat exchange tube 8, avoiding the situation where the crystal collides with the spiral heat exchange tube 8 and causes internal medium leakage.

[0034] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A single crystal silicon production processing apparatus comprising a lower furnace chamber (1) and an upper furnace chamber (2), characterized by: A crucible (3) is fixed inside the lower furnace chamber (1), and an electric heater (4) is installed between the crucible (3) and the inner wall of the lower furnace chamber (1). An upper furnace chamber (2) is installed on the top of the lower furnace chamber (1), and an isolation valve (9) is installed at the connection between the lower furnace chamber (1) and the upper furnace chamber (2). A lifting and rotating mechanism (6) is fixedly installed on the top of the upper furnace chamber (2), and a suspension wire (24) extending to the upper furnace chamber (2) is provided inside the lifting and rotating mechanism (6). A seed crystal (5) is fixedly installed at the bottom end of the suspension wire (24) through a clamp, and the seed crystal (5) is suspended above the crucible (3) in the lower furnace chamber (1). A preheating box is fixed on the right side of the top surface of the upper furnace chamber (2). 11), and a serpentine heat exchange tube (13) is installed on the inner wall of the preheating box (11), and a spiral heat exchange tube (8) is installed on the inner wall of the upper furnace chamber (2), and the spiral heat exchange tube (8) and the serpentine heat exchange tube (13) are connected by a flange. A water tank (15) is installed on the lower surface of the serpentine heat exchange tube (13), and a water pump (19) connected to the serpentine heat exchange tube (13) is installed inside the water tank (15). A receiving shell (16) is fixedly installed on the top of the water tank (15), and a storage drawer (18) is pulled out and installed inside the receiving shell (16). Several heat-conducting fins (14) are welded and installed on the surface of the serpentine heat exchange tube (13) corresponding to the receiving shell (16).

2. The single crystal silicon production apparatus according to claim 1, wherein: The lower inner side of the upper furnace chamber (2) is welded with a horn cover (23), and the horn cover (23) is inverted as a whole. The small opening at the top of the horn cover (23) extends to the inner side of the spiral heat exchange tube (8). The right side wall of the upper furnace chamber (2) has two mounting holes (25) corresponding to the spiral heat exchange tube (8).

3. The single crystal silicon production apparatus according to claim 1, wherein: Several columns are welded and installed between the water tank (15) and the housing shell (16), and a water inlet (20) is provided at the corner of the top surface of the water tank (15).

4. The single crystal silicon production apparatus according to claim 1, wherein: The housing (16) is U-shaped, and a set of slide rails (17) is provided on each side of the inner wall of the housing (16). The left and right sides of the storage drawer (18) are respectively provided with slide bars (22) that are slidably connected to the slide rails (17).

5. The single crystal silicon production apparatus according to claim 1, wherein: The side wall of the upper furnace chamber (2) is connected to an inert gas injection nozzle (7), and the right side wall of the lower furnace chamber (1) is connected to a vacuum pipe (10), which is connected to an external vacuum pump.

6. The single crystal silicon production apparatus according to claim 1, wherein: A blower (21) is embedded in the left side wall of the preheating box (11), and the air outlet of the blower (21) is set towards the heat-conducting fins (14). Several round holes are opened on the surface of several heat-conducting fins (14), and two adjacent heat-conducting fins (14) are arranged in parallel.

7. The single crystal silicon production apparatus according to claim 1, wherein: The surface of the preheating box (11) is coated with a polyurethane insulation coating, and the surface of the preheating box (11) is hinged with a door (12).

Images