Deposition system

Abstract

The utility model discloses a deposition system. The deposition system comprises a device body, an electrode assembly, a gas-electric feed-in piece and a radio frequency module. The equipment body is provided with a process cavity. The electrode assembly is arranged in the process cavity. The pneumoelectric feed-in piece is arranged on one side of the equipment main body, the pneumoelectric feed-in piece comprises a first pipeline and a plurality of second pipelines, the first pipeline and the second pipelines penetrate through one side wall of the equipment main body and are in gas conduction and electric conduction with the electrode assembly, the second pipelines are uniformly arranged around the first pipeline, and the second pipelines and the first pipeline are arranged at intervals; the distances between the different second pipelines and the first pipeline are the same, and the first pipeline and the second pipelines are arranged in a communicating mode. The radio frequency module is electrically connected with the first pipeline, and the first pipeline is connected with the second pipeline through a cable. In this way, the uniformity of film coating of the deposition system can be improved.

Description

Technical Field

[0001] This application relates to the field of thin film deposition technology, and in particular to deposition systems. Background Technology

[0002] Deposition equipment uses ionized process gases to deposit films onto substrates on a carrier plate. With the continuous development of deposition technology, the demand for deposition equipment capacity is increasing, and the size of deposition equipment is also growing. In related technologies, the large size of deposition equipment can lead to problems such as standing wave effects and uneven diffusion of process gases, resulting in uneven film deposition. Utility Model Content

[0003] Embodiments of this application provide a deposition system that can improve the uniformity of the film deposited by the deposition system.

[0004] This application provides a deposition system. The deposition system includes a device body, an electrode assembly, a gas-electric feeder, and a radio frequency (RF) module. The device body has a process cavity. The electrode assembly is disposed within the process cavity. The gas-electric feeder is disposed on one side of the device body and includes a first conduit and multiple second conduits. The first and second conduits pass through one side wall of the device body and are in gas and electrical communication with the electrode assembly. The second conduits are uniformly arranged around the first conduit, spaced apart from it, with each second conduit equidistant from the first conduit. The first and second conduits are connected. The RF module is electrically connected to the first conduit, and the first and second conduits are connected via cables.

[0005] Optionally, the first conduit and the second conduit are connected by coaxial cables of equal length.

[0006] Optionally, the second pipeline is connected to the first pipeline via a connecting pipeline, and the connecting pipeline is equipped with a regulating valve.

[0007] Optionally, on the part of the main body of the equipment corresponding to the second pipeline, a functional groove is provided around the second pipeline, and multiple functional grooves are provided in the direction away from the second pipeline.

[0008] Optionally, only one first pipeline is provided, and it is centrally located on the main body of the equipment. Four second pipelines are provided, and the lines connecting adjacent second pipelines can form a rectangle, with the diagonal of the rectangle passing through the first pipeline.

[0009] Optionally, the deposition system also includes a vent seat, which is installed on and connected to the first pipeline. A heat-insulating gasket is provided between the vent seat and the first pipeline, and the vent seat and the first pipeline are insulated from each other.

[0010] Optionally, the deposition system further includes an air intake assembly connected to a vent seat. The air intake assembly includes an air intake duct and a first cooling element and a second cooling element surrounding the air intake duct. The length of the first cooling element is shorter than the length of the second cooling element. The first cooling element is disposed on the side of the second cooling element away from the vent seat. The air intake assembly also includes a magnetic ring surrounding the outer periphery of the second cooling element.

[0011] Optionally, the radio frequency used in the deposition system is greater than or equal to 40.68 MHz, and at least one edge of the electrode assembly is greater than or equal to 1.5 m.

[0012] Optionally, the electrode assembly includes a first electrode plate and a second electrode plate. The second electrode plate is located on the side of the first electrode plate away from the gas-electric feeder. The first electrode plate and the second electrode plate surround a diffusion cavity. A first pipeline and a second pipeline are connected to the first electrode plate and are electrically connected to the first electrode plate. The second electrode plate is mounted on the first electrode plate and is electrically connected to the first electrode plate. The first pipeline and the second pipeline are connected to the diffusion cavity. The second electrode plate has multiple connecting holes that connect the diffusion cavity and the process cavity.

[0013] Optionally, an insulating flange is provided between the first pipeline and the main body of the equipment, and an insulating flange is provided between the second pipeline and the main body of the equipment; the first pipeline is integrally formed with the first electrode plate, and the second pipeline is integrally formed with the first electrode plate.

[0014] The beneficial effects of this application are as follows: Unlike the prior art, the first conduit can feed current and process gas into the central part of the equipment body, while multiple second conduits surrounding the first conduit can feed current and process gas into the parts of the equipment body closer to the edge. By setting up second conduits around the first conduit, multiple feed points for feeding current and process gas can be formed on the equipment body, thereby reducing the standing wave effect of current feeding and increasing the uniformity of process gas flow. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of an embodiment of the deposition system of this application;

[0016] Figure 2 yes Figure 1 A schematic diagram of the structure of the second pipeline of the deposition system in conjunction with the main body of the equipment;

[0017] Figure 3 This is a top view of an embodiment of the deposition system of this application;

[0018] Figure 4 This is a top view of another embodiment of the deposition system of this application;

[0019] Figure 5 This is a top view of yet another embodiment of the deposition system of this application;

[0020] Figure 6 This is a top view of yet another embodiment of the deposition system of this application;

[0021] Figure 7 This is a schematic diagram of the structure of an embodiment of the air intake component of this application. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0023] Currently, photovoltaic plasma vapor deposition equipment is becoming increasingly large-scale, with cathodes reaching considerable sizes and employing very high frequency (VHF) processes. Furthermore, with large cathode sizes and high process frequencies, the wavelength corresponding to the process frequency matches the cathode size, leading to standing wave (SWR) effects. This means current electrode feeding methods are no longer sufficient to meet the uniformity requirements of large-area cathodes and VHF processes. For example, with radio frequency (RF) frequencies exceeding 40.68 MHz, 1 / 4λ of a 40.68 MHz RF electromagnetic wave is 1.84 meters. When the cathode size is close to 1.84 meters, SWR effects are easily generated during electrode feeding current. On the other hand, with larger equipment sizes, center-feeding of the process gas increases the diffusion distance of the process gas, causing the concentration to gradually decrease from the center to the edges, resulting in uneven coating. To improve these technical problems, this application provides the following embodiments.

[0024] Combination Figures 1 to 6 This application provides a deposition system 1. The deposition system 1 includes a device body 10, an electrode assembly 20, a gas-electric feeder 30, and a radio frequency module 40. The device body 10 has a process cavity 101. The electrode assembly 20 is disposed within the process cavity 101. The process cavity 101 contains parallel electrode assemblies 20 and electrode plates. The electrode assembly 20 is disposed above the electrode plates. The gas-electric feeder 30 is disposed on one side of the device body 10. The gas-electric feeder 30 passes through the device body 10 and connects to the electrode assembly 20. Optionally, the gas-electric feeder 30 is disposed on the side of the device body 10 corresponding to the electrode assembly 20. The gas-electric feeder 30 may be disposed above the device body 10.

[0025] Specifically, the gas-electric feeder 30 includes a first conduit 31 and multiple second conduits 32. The first conduit 31 and the second conduits 32 pass through one side wall of the equipment body 10 and are in gas and electrical communication with the electrode assembly 20. There can be at least two, three, or more conduits. The second conduits 32 are evenly arranged around the first conduit 31. The second conduits 32 are spaced apart from the first conduit 31. Both the first conduit 31 and the second conduit 32 can introduce process gas into the process chamber 101. The first conduit 31 and the second conduit 32 can feed current into the electrode assembly 20. The first conduit 31 can feed current and process gas to the central part of the equipment body 10, while the multiple second conduits 32 surrounding the first conduit 31 can feed current and process gas to the parts of the equipment body 10 near the edges. By providing a second pipe 32 surrounding the first pipe 31, multiple feed points for current and process gas can be formed on the equipment body 10, thereby reducing the standing wave effect of the current feed and improving the uniformity of the process gas flow. Optionally, the axial direction of the first pipe 31 and the axial direction of the second pipe 32 are parallel. Optionally, the minimum distance of the second pipe 32 from the edge of the equipment body 10 is less than the distance of the second pipe 32 from the first pipe 31. Optionally, combined with... Figure 5 The second pipeline 32 can be set at the edge of the main body 10 of the equipment.

[0026] In some embodiments, the second conduits 32 are evenly spaced circumferentially from the first conduits 31. The distance between each second conduit 32 and the first conduit 31 is the same. In this way, during the feeding of current and process gas, the paths of current flowing into different second conduits 32 and the diffusion paths of process gas into different second conduits 32 are minimized, allowing for a more symmetrical feeding of current and process gas. This results in a more uniform feeding of current and process gas into the equipment body 10, which is beneficial for improving the uniformity of the coating.

[0027] In some embodiments, the first pipeline 31 and the second pipeline 32 are connected in series. The first pipeline 31 and the second pipeline 32 may be connected in parallel. The process gas may first be introduced into the first pipeline 31 corresponding to the middle of the equipment body 10, and then diffused evenly into a plurality of second pipelines 32 that are evenly spaced from the first pipeline 31.

[0028] In some embodiments, the radio frequency module 40 is electrically connected to the first conduit 31, and the first conduit 31 is connected to the second conduit 32 via a cable 80. The current of the radio frequency module 40 can first flow into the first conduit 31 corresponding to the middle of the device body 10, and then be connected to the multiple second conduits 32 via the cable 80 respectively.

[0029] In some embodiments, the radio frequency used by the deposition system 1 during operation is greater than or equal to 40.68 MHz, and at least one edge of the electrode assembly 20 is greater than or equal to 1.5 μm. Using a high-frequency operating frequency and a large-size electrode assembly 20 can improve the deposition efficiency of the film, which is beneficial for increasing the equipment's throughput.

[0030] In some embodiments, the first conduit 31 and the second conduit 32 are connected by a coaxial cable of equal length. In related technologies, copper electrodes are typically used to transmit electromagnetic waves. However, with large electrode areas, long transmission distances, and multiple feed points, copper electrodes suffer from greater power loss and are susceptible to interference and heat generation. This application significantly reduces the transmission distance of exposed electrodes by using a coaxial cable of equal length to connect the first conduit 31 and the second conduit 32. Furthermore, the presence of a shielding layer between the two conductors in the coaxial cable effectively reduces power loss and external interference during electromagnetic wave transmission, improving transmission quality, safety, and reliability. Coaxial cables also offer advantages such as simple construction, easy maintenance, and relatively low operating costs. Optionally, combined with… Figure 4 and Figure 6 The first conduit 31 and the multiple second conduits 32 can be connected by a separate coaxial cable. Alternatively, the first conduit 31 can be extended to the space between two second conduits 32 by first setting an electrode plate, and then the electrode plate and the second conduit 32 can be connected by a coaxial cable.

[0031] In some embodiments, the second pipeline 32 is connected to the first pipeline 31 via a connecting pipeline 70, and the connecting pipeline 70 is provided with a regulating valve 71. By providing the regulating valve 71 in the connecting pipeline 70, the process gas flow rate of each connecting pipeline 70 can be independently adjusted, so that the process gas is fed into the cavity quickly and uniformly, and has an adjustable means. Thus, the process gas flow rate of the second pipeline 32 can be adjusted by adjusting the flow rate of the connecting pipeline 70 through the regulating valve 71, so as to promote the gas fed into each second pipeline 32 to be relatively uniform.

[0032] Combination Figure 3 and Figure 4In some embodiments, functional grooves 11 are provided around the second conduit 32 on the portion of the device body 10 corresponding to the second conduit 32. Multiple functional grooves 11 are provided in the direction away from the second conduit 32. By processing multiple functional grooves 11 around the second conduit 32 on the device body 10, the distribution of the current on the electrode surface can be changed using the distribution of these functional grooves 11, which can effectively suppress the logarithmic singularity effect of the potential near the electrode feed port. The functional grooves 11 can be annular or rectangular grooves, without specific limitations. Specifically, due to the logarithmic singularity effect of the potential at the electrode feed point, the electric field strength weakens from the center to the edge. Processing multiple segmented functional grooves 11 near the second conduit 32, and using the distribution of these functional grooves 11 to change the distribution of the current on the electrode surface, can effectively suppress the logarithmic singularity effect of the potential near the second conduit 32, improve the uniformity of the electric field distribution within the electrode, and thus improve the uniformity of thin film deposition. Multiple functional grooves 11 can be provided at intervals in the direction away from the second conduit 32. Multiple functional slots 11 can be provided at intervals around the second pipe 32.

[0033] In some embodiments, only one first pipe 31 is provided, centrally located on the device body 10, and four second pipes 32 are provided. The lines connecting adjacent second pipes 32 can form a rectangle, the diagonal of which passes through the first pipe 31. In this way, a pneumatic-electric feed method can be formed with a central point (corresponding to the first pipe 31) and four edge points (corresponding to the second pipes 32). This method can significantly improve the standing wave effect of electromagnetic waves and the problems of slow and uneven single-point air intake velocity.

[0034] In some embodiments, the deposition system 1 further includes a vent seat 50, which is installed on and communicates with the first pipeline 31. The vent seat 50, being connected to the first pipeline 31, serves as a transition component for communication between the first pipeline 31 and other components. The vent seat 50 may have an annular channel inside, allowing for the cooling of the gas inside by introducing coolant. Specifically, the RF module 40 may generate high temperatures during the current feeding process into the first pipeline 31, and the process gas itself may also have a high temperature after generation. The vent seat 50 can effectively cool the process gas.

[0035] Furthermore, a heat-insulating gasket 90 is provided between the vent seat 50 and the first pipe 31, thus insulating the vent seat 50 from the first pipe 31. Coolant flows through the vent seat 50, and during the coolant circulation process, grounding may occur. Additionally, the air intake assembly 60 connected to the vent seat 50 may also be grounded. If the first pipe 31 and the vent seat 50 are electrically connected, current cannot be effectively fed into the main body 10 of the equipment. By providing the heat-insulating gasket 90, heat conduction can be reduced, and the vent seat 50 can be insulated from the first pipe 31.

[0036] Combination Figure 1 and Figure 7 In some embodiments, the deposition system 1 further includes an air intake assembly 60, which is connected to the vent seat 50. The air intake assembly 60 includes an air intake pipe 61 and a first cooling element 62 and a second cooling element 63 surrounding the air intake pipe 61. The length of the first cooling element 62 is shorter than the length of the second cooling element 63. The first cooling element 62 is disposed on the side of the second cooling element 63 away from the vent seat 50. The air intake assembly 60 also includes a magnetic ring 64, which surrounds the outer periphery of the second cooling element 63. The end of the air intake pipe 61 near the second cooling element 63 is connected to the vent seat 50 (or the first pipe 31). Coolant can be introduced into the first cooling element 62 and the second cooling element 63 to cool the air intake pipe 61.

[0037] Specifically, the intake assembly 60 can be connected to a remote plasma gas source to allow the introduction of process gas. The process gas generated by the remote plasma gas source has a high temperature, and the first cooling element 62 can initially cool the process gas. The second cooling element 63 can further cool the process gas. By setting the first cooling element 62 and the second cooling element 63, the intake assembly 60 can independently control the cooling effect of the first cooling element 62 and the second cooling element 63 according to the different temperature distributions of the process gas.

[0038] When the remote plasma gas source and the radio frequency module 40 are simultaneously feeding current into the device body 10, radio frequency interference will occur between them. By setting up a magnetic ring 64, the radio frequency interference generated by the radio frequency module 40 can be suppressed, achieving electromagnetic shielding and helping to improve the operational stability of the remote plasma gas source and the radio frequency module 40.

[0039] Combination Figure 1In some embodiments, the electrode assembly 20 includes a first electrode plate 21 and a second electrode plate 22. The second electrode plate 22 is located on the side of the first electrode plate 21 away from the gas-electric feeder 30. The first electrode plate 21 and the second electrode plate 22 surround and form a diffusion cavity 201. A first conduit 31 and a second conduit 32 are connected to the first electrode plate 21 and are electrically conductive with it. The second electrode plate 22 is mounted on the first electrode plate 21 and is electrically conductive with it. The first conduit 31 and the second conduit 32 communicate with the diffusion cavity 201. The second electrode plate 22 has multiple connecting holes 221, which connect the diffusion cavity 201 and the process chamber 101. The first electrode plate 21 and the second electrode plate 22 can form a chamber for the diffusion of process gas, thereby allowing the process gas to diffuse uniformly first. The connecting holes 221 on the second electrode plate 22 enable the second electrode plate 22 to act as a spray plate, thereby uniformly introducing the diffused process gas into the coating area.

[0040] In some embodiments, an insulating flange is provided between the first conduit 31 and the device body 10, and an insulating flange is provided between the second conduit 32 and the device body 10. By providing insulating flanges, the current in the first conduit 31 and the second conduit 32 can be prevented from grounding through the device body 10. The first conduit 31 and the first electrode plate 21 are integrally formed, and the second conduit 32 and the first electrode plate 21 are integrally formed. The first conduit 31 and the first electrode plate 21 can be integrally formed by welding, and the second conduit 32 and the second electrode plate 22 can also be integrally formed by welding. The integrally formed first conduit 31 and the first electrode plate 21 and the integrally formed second conduit 32 and the second electrode plate 22 form a whole, and the resistance change is small during operation, which is beneficial to improving the working stability of the deposition system 1.

[0041] The above are merely embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A deposition system, characterized in that, include: The main body of the equipment has a process cavity; An electrode assembly, wherein the electrode assembly is disposed within the process cavity; An electrical feeder is disposed on one side of the main body of the device. The electrical feeder includes a first pipe and a plurality of second pipes. The first pipe and the second pipes both pass through one side wall of the main body of the device and are in air and electrical communication with the electrode assembly. The second pipes are evenly arranged around the first pipe. The second pipes are spaced apart from the first pipes, but the distance between the second pipes and the first pipes is the same. The first pipes and the second pipes are connected. The radio frequency module is electrically connected to the first conduit, and the first conduit and the second conduit are connected by a cable.

2. The deposition system according to claim 1, characterized in that: The first conduit and the second conduit are connected by coaxial cables of equal length.

3. The deposition system according to claim 1, characterized in that: The second pipeline is connected to the first pipeline via a connecting pipeline, and the connecting pipeline is equipped with a regulating valve.

4. The deposition system according to claim 1, characterized in that: On the part of the main body of the device corresponding to the second pipeline, a functional slot is provided around the second pipeline, and multiple functional slots are provided in the direction away from the second pipeline.

5. The deposition system according to claim 1, characterized in that: There is only one first pipe, which is centrally located on the main body of the equipment. There are four second pipes, and the lines connecting adjacent second pipes can form a rectangle, the diagonal of which passes through the first pipe.

6. The deposition system according to claim 1, characterized in that: The deposition system further includes a vent seat, which is installed on and connected to the first pipeline. A heat-insulating gasket is provided between the vent seat and the first pipeline, and the vent seat and the first pipeline are insulated from each other.

7. The deposition system according to claim 6, characterized in that: The deposition system further includes an air intake assembly connected to the vent seat. The air intake assembly includes an air intake pipe and a first cooling element and a second cooling element surrounding the air intake pipe. The length of the first cooling element is less than the length of the second cooling element. The first cooling element is disposed on the side of the second cooling element away from the vent seat. The air intake assembly also includes a magnetic ring surrounding the outer periphery of the second cooling element.

8. The deposition system according to claim 1, characterized in that: The deposition system operates at a radio frequency greater than or equal to 40.68 MHz, and at least one edge of the electrode assembly is greater than or equal to 1.5 m.

9. The deposition system according to claim 1, characterized in that: The electrode assembly includes a first electrode plate and a second electrode plate. The second electrode plate is located on the side of the first electrode plate away from the gas-electric feeder. The first electrode plate and the second electrode plate surround a diffusion cavity. The first pipeline and the second pipeline are connected to the first electrode plate and are electrically connected to the first electrode plate. The second electrode plate is mounted on the first electrode plate and is electrically connected to the first electrode plate. The first pipeline and the second pipeline are connected to the diffusion cavity. The second electrode plate has multiple connecting holes, which connect the diffusion cavity and the process cavity.

10. The deposition system according to claim 9, characterized in that: An insulating flange is provided between the first pipeline and the main body of the equipment, and an insulating flange is provided between the second pipeline and the main body of the equipment; the first pipeline is integrally formed with the first electrode plate, and the second pipeline is integrally formed with the first electrode plate.

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