Crystal ingot separation device based on thermal stress induction

Abstract

The utility model discloses a crystal ingot separating device based on thermal stress induction, which comprises a crucible upper cover main body, the crucible upper cover main body comprises a gas guide ring, the bottom of the gas guide ring is fixedly provided with a seed crystal seat, and the surface of the gas guide ring is provided with an annular nick. Compared with traditional mechanical cutting, thermal stress is used for inducing separation, possible damage to crystal ingots is avoided, the surface roughness of the crystal ingots separated through thermal stress induction is low, the efficiency of crystal ingot separation is greatly improved, the operation time of crystal ingot separation is greatly shortened, chemical pollution is avoided, dust and waste liquid are not generated, and the production cost is reduced. The problem that according to traditional crystal ingot separation, after crystal growth is finished, crystal ingots are separated by mechanically cutting an upper cover of a cylindrical crucible, but the crystal ingots are prone to being damaged in the separation mode is solved.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide crystal growth equipment technology, specifically a crystal ingot separation device based on thermal stress-induced separation. Background Technology

[0002] Traditional ingot separation involves mechanically cutting the top of a cylindrical crucible after crystal growth, but this method can easily damage the ingot. Utility Model Content

[0003] To address the problems mentioned in the background art, the purpose of this utility model is to provide a crystal ingot separation device based on thermal stress induction. This device utilizes thermal stress to separate the connection between the crystal ingot and the crucible, avoiding the damage that may occur with traditional separation methods. The U-shaped notch can also separate the crucible cover from the crystal ingot. This solves the problem that traditional crystal ingot separation involves mechanically cutting the cylindrical crucible cover after crystal growth, which can easily damage the crystal ingot.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a crystal ingot separation device based on thermal stress-induced separation, comprising a crucible cover body, the crucible cover body comprising a gas guide ring, a seed crystal seat fixedly installed at the bottom of the gas guide ring, and annular grooves formed on the surface of the gas guide ring.

[0005] As a preferred embodiment of this invention, the groove thickness is 3.3 mm, the length is 60 mm, and the groove angle is 60°.

[0006] As a preferred embodiment of this invention, the groove thickness is 5mm, the length is 60mm, and the groove angle is 90°.

[0007] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0008] 1. This utility model utilizes thermal stress-induced separation, which avoids potential damage to the crystal ingot compared to traditional mechanical cutting. Furthermore, the surface roughness of the crystal ingot obtained through thermal stress-induced separation is lower, greatly improving the efficiency of crystal ingot separation and significantly reducing the operation time. It produces no chemical pollution, dust, or waste liquid, and solves the problem that traditional crystal ingot separation involves mechanically cutting the cylindrical crucible cover after crystal growth, which easily damages the crystal ingot. This invention achieves the goal of separating the connection between the crystal ingot and the crucible using thermal stress, avoiding the damage that may be caused by traditional separation. The U-shaped notch can also effectively separate the crucible cover from the crystal ingot.

[0009] 2. This invention features a 4mm thick, 60mm long, and 60° etched groove. The grooves consist of four radial grooves and three concentric circular grooves, each 4mm deep and spaced 20mm apart. After crystal growth, the crucible lid and top cover are removed. A flexible pipe is placed around the pre-drilled circular grooves on the gas guide ring, and liquid nitrogen is poured evenly along the pipe at a rate of 0.3L / min. Rapid cooling of the etched area within a short time ensures that the stress exceeds the crucible's strength, allowing the ingot to completely separate from the top cover without any damage.

[0010] 3. This invention features a 5mm thick, 60mm long, and 90° etched groove. The grooves consist of four radial grooves and three concentric circular grooves, each 4mm deep and spaced 20mm apart. After crystal growth, the crucible lid and top cover are removed. A flexible pipe is then placed around the pre-drilled circular grooves on the gas guide ring. Liquid nitrogen is poured evenly along the pipe at a rate of 0.3L / min. This rapid cooling of the etched area within a short time ensures that the stress exceeds the crucible's strength, allowing the ingot to completely separate from the top cover without any damage. The separation speed is significantly accelerated. Attached Figure Description

[0011] Figure 1 This is a first-person perspective three-dimensional structural diagram of the present invention.

[0012] Figure 2 This is a schematic diagram of the overall three-dimensional structure of the present invention from a second perspective;

[0013] Figure 3 This is a schematic diagram of the overall three-dimensional structure of this utility model from a third-view perspective.

[0014] In the figure: 1. Crucible top cover body; 101. Gas guide ring; 102. Seed crystal seat; 103. Circular groove. Detailed Implementation

[0015] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0016] like Figures 1 to 3 As shown, the present invention provides a crystal ingot separation device based on thermal stress induced by the present invention, including a crucible cover body 1, the crucible cover body 1 including a gas guide ring 101, a seed crystal seat 102 fixedly installed at the bottom of the gas guide ring 101, and annular grooves 103 formed on the surface of the gas guide ring 101.

[0017] refer to Figure 1 The etch mark thickness is 3.3mm, the length is 60mm, and the etch mark angle is 60°.

[0018] As a technical optimization of this utility model, the scoring thickness is set to 4mm, the length to 60mm, and the scoring angle to 60°. The scoring consists of four radial scoring lines, plus three concentric scoring rings. Figure 2 The depth is 4mm, and the spacing is 20mm. After crystal growth, remove the crucible cover and the top cover plate. Wrap the flexible pipe around the pre-drilled circular grooves on the gas guide ring 101, and pour liquid nitrogen evenly along the pipe at a rate of 0.3L / min. By rapidly cooling the grooved area in a short time, the stress is made greater than the strength of the crucible itself, thus achieving complete separation of the ingot from the top cover without any damage.

[0019] refer to Figure 1 The etch mark thickness is 5mm, the length is 60mm, and the etch mark angle is 90°.

[0020] As a technical optimization of this utility model, the scoring is set to a thickness of 5mm, a length of 60mm, and a scoring angle of 90°. The scoring consists of four radial scoring lines and three concentric circular scoring rings, with a depth of 4mm and a spacing of 20mm. After crystal growth, the crucible lid and top cover are removed. A flexible pipe is placed around the pre-drilled circular scoring on the gas guide ring 101, and liquid nitrogen is poured evenly along the pipe at a rate of 0.3L / min. This rapid cooling of the scoring area within a short time ensures that the stress exceeds the crucible's strength, thus achieving complete separation of the ingot from the top cover without any damage, and significantly accelerating the separation speed.

[0021] The working principle and usage process of this utility model are as follows: In use, the crucible cover body 1 consists of a gas guide ring 101, a seed crystal seat 102, and a detachable cover plate. The purpose is to separate the seed crystal seat 102 from the gas guide ring 101 to obtain the crystal ingot. A V-shaped groove is pre-reserved on the gas guide ring 101. The thickness of the groove is 20%-30% of its own thickness. The greater the thickness, the worse the stability of the crucible cover. The length is three-quarters of the crucible cover's length. The center position of the V-shaped groove is determined by the center of the circle. The width is consistent with the thickness of the gas guide ring 101, and the included angle is 60°-90°. The larger the angle, the greater the stress concentration and the shorter the separation time. The depth of the circular groove is consistent with the V-shaped groove. Four V-shaped grooves are set every 90° in ring 101, and three concentric circular grooves are set every 20mm. The grooves mechanically create stress concentration points. A ring-shaped cooling pipe is set on the side wall of the gas guide ring 101. After crystal growth, liquid nitrogen is poured evenly along the ring grooves through a flexible pipe at a rate of 0.3L / min to locally cool the crucible cover. By rapidly cooling the reserved groove area, the thermal conductivity at the grooves changes rapidly, causing stress concentration. When the stress exceeds the strength of the crucible cover itself, the crucible and the ingot are separated without damage. After separation, the ingot is removed by a vacuum chuck to prevent damage to the ingot or the operator.

[0022] In summary, this ingot separation device based on thermal stress induces separation, which avoids potential damage to the ingot compared to traditional mechanical cutting. Furthermore, the surface roughness of the ingot separated by thermal stress induces separation is lower, significantly improving the efficiency of ingot separation and greatly reducing the operation time. It also eliminates chemical pollution, dust, and waste liquid, solving the problem that traditional ingot separation, which involves mechanically cutting the top of a cylindrical crucible after crystal growth, is prone to damaging the ingot.

[0023] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0024] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A crystal ingot separation device based on thermal stress-induced separation, comprising a crucible cover body (1), characterized in that: The crucible cover body (1) includes a gas guide ring (101), a seed crystal seat (102) is fixedly installed at the bottom of the gas guide ring (101), and an annular groove (103) is opened on the surface of the gas guide ring (101).

2. The ingot separation device based on thermal stress-induced separation according to claim 1, characterized in that: The groove is 3.3 mm thick, 60 mm long, and the groove angle is 60°.

3. The ingot separation device based on thermal stress-induced separation according to claim 1, characterized in that: The groove is 5mm thick, 60mm long, and the groove angle is 90°.

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