Doping device for heavily doping Czochralski single crystal
By introducing a guide portion into the doping device to block and guide escaping gas molecules, the doping area is increased, solving the problem of low doping efficiency in the prior art and achieving efficient single crystal growth and long device life.
CN224186324UActive Publication Date: 2026-05-01HAINA SEMICON (SHANXI) CO LTD
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Patent Information
- Application Number
- CN202520922026.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-12
- Publication Date
- 2026-05-01
- Estimated Expiration
- 2035-05-12
AI Technical Summary
Technical Problem
In the existing technology, unreasonable design of the doping device leads to dopant loss, low doping efficiency, and affects the yield of single crystal growth.
Method used
Design a doping device for heavily doped Czochralski single crystals, including a bell-shaped doping shroud and a guide portion. The guide portion extends radially outward and downward to block and guide escaping gas molecules, increase the doping area, and ensure non-contact doping.
Benefits of technology
It improves doping efficiency and single crystal growth yield, reduces impurity introduction, and extends the lifespan of the device.
✦ Generated by Eureka AI based on patent content.
Abstract
The utility model discloses a doping device for heavily doping a Czochralski single crystal, which comprises a doping bowl suitable for containing a dopant, a doping device for heavily doping a Czochralski single crystal, and a doping device for heavily doping a Czochralski single crystal, the doping cover comprises a doping cover body and a guide part, the doping cover body is bell-shaped, the axial direction of the doping cover body extends in the vertical direction, the doping bowl is coaxial with the doping cover body and is connected with the top of the inner wall of the doping cover body, and the guide part is connected to the bottom end of the doping cover body; the guide part is annular and extends outwards and downwards in the radial direction of the doping cover body, and the guide part and the silicon solution are arranged at an interval in the vertical direction. Therefore, the guide part is connected to the bottom of the doping cover body, so that on the premise of ensuring non-contact doping, the guide part can block and guide a part of escaping gas molecules, the doping area can be increased, the doping efficiency can be improved, and the one-time yield of single crystal growth can be improved.
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