Medium-low-transmittance temperable double-silver Low-E glass
By adding a NiCr barrier protective layer and a transition protective layer to Low-E glass, the problem of weak bonding between the ZnAlOx dielectric film and the Ag low-emissivity functional layer was solved, thereby improving the stability and yield of the film.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- HUNAN QIBIN ENERGY SAVING GLASS CO LTD
- Filing Date
- 2025-04-29
- Publication Date
- 2026-05-05
AI Technical Summary
In existing Low-E glass, after tempering, the ZnAlOx dielectric film layer and the Ag low-emissivity functional layer are not firmly bonded, leading to film peeling and burning, which affects production efficiency and yield.
NiCr barrier protective layers are added before and after the first low-emissivity functional layer of Low-E glass, and a transition protective layer, including TiZnOx and Cr layers, is set between the second dielectric layer and the first barrier protective layer to enhance the adhesion and stability of the film.
It improves the adhesion of the film layers in Low-E glass during the tempering process, preventing peeling and burning, and increasing product yield and production efficiency.
Smart Images
Figure CN224199298U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of coated glass technology, and in particular to a medium-low transmittance tempered double silver Low-E glass. Background Technology
[0002] Low-E glass, with its attractive colors, good texture, and excellent energy-saving properties, has been widely used in the building curtain wall industry. Among them, temperable Low-E glass, suitable for large-area production and possessing the most efficient production process currently available, allows for subsequent processing such as cutting, grinding, steeling, and clamping, thus attracting widespread attention and becoming a major trend in the future development of Low-E glass. However, temperable double-silver Low-E glass requires tempering processing, especially bending, which involves long heating times and high temperatures. This places high demands on the heat resistance, toughness, and film stress of the Low-E glass's film layer. Existing Low-E glass suffers from unstable metal oxide layer properties during high-temperature processing, resulting in poor heat resistance, insufficient toughness, and weak bonding with the silver metal layer, leading to problems such as film peeling and film burning.
[0003] In the existing technology, in order to overcome the above-mentioned technical problems, the glass substrate is generally tempered first, and then coated. However, the preparation process of tempering first and then coating is inefficient and wasteful. Tempered glass requires manual loading and unloading, which requires a sufficient number of operators and increases labor costs. At the same time, the speed of manual loading and unloading also restricts the coating speed. On the other hand, the process of bending and tempering the glass substrate before coating is complicated and cumbersome, resulting in low production efficiency.
[0004] To solve the above technical problems, it is necessary to develop a Low-E glass that will not have problems such as weak adhesion and peeling of the coating or burning of the coating after the coated glass substrate is tempered. Utility Model Content
[0005] The main purpose of this invention is to propose a low-to-medium transmittance tempered double-silver Low-E glass, which aims to prevent defects such as film peeling and film burning caused by weak bonding between the second dielectric layer and the first low-emissivity functional layer after tempering, thereby improving the product yield.
[0006] To achieve the above objectives, the present invention proposes a low-to-medium transmittance tempered double-silver Low-E glass, comprising a glass substrate layer and a coating layer, wherein the coating layer is deposited on one side of the glass substrate layer, and the coating layer comprises a first composite layer, wherein the first composite layer comprises a first dielectric combination layer, a first low-emissivity functional layer and a first crystal bed dielectric layer stacked sequentially, and the first dielectric combination layer is disposed adjacent to the glass substrate layer;
[0007] The first composite layer further includes a first barrier protection layer and a second barrier protection layer respectively disposed on adjacent sides of the first low-emissivity functional layer. The first barrier protection layer is disposed between the first dielectric composite layer and the first low-emissivity functional layer, and the second barrier protection layer is disposed between the first low-emissivity functional layer and the first crystal bed dielectric layer.
[0008] In one embodiment, the first barrier layer is a NiCr layer; and / or, the second barrier layer is a NiCr layer.
[0009] In one embodiment, the thickness of the first barrier layer is 1 nm to 2 nm; and / or, the thickness of the second barrier layer is 1 nm to 2 nm.
[0010] In one embodiment, the first dielectric composite layer comprises a first dielectric layer and a second dielectric layer sequentially along one side of the glass substrate layer;
[0011] Wherein, the first dielectric layer is a SiNx layer, and the second dielectric layer is a ZnAlOx layer; and / or, the thickness of the first dielectric layer is 20nm to 30nm; and / or, the thickness of the second dielectric layer is 10nm to 15nm.
[0012] In one embodiment, the first low-emissivity functional layer is an Ag layer; and / or, the first crystal bed dielectric layer is an AZO layer; and / or, the thickness of the first low-emissivity functional layer is 2nm to 4nm; and / or, the thickness of the first crystal bed dielectric layer is 5nm to 10nm.
[0013] In one embodiment, the coating layer further includes a second composite layer; the second composite layer includes a second dielectric composite layer, a second low-emissivity functional layer, a third barrier protective layer, and a second crystal bed dielectric layer stacked sequentially, wherein the second dielectric composite layer and the first crystal bed dielectric layer are disposed adjacent to each other.
[0014] In one embodiment, the second dielectric composite layer comprises a third dielectric layer and a fourth dielectric layer sequentially along one side of the first crystal bed dielectric layer;
[0015] Wherein, the third dielectric layer is a SiNx layer, and the fourth dielectric layer is a ZnAlOx layer; and / or, the thickness of the third dielectric layer is 50nm to 70nm; and / or, the thickness of the fourth dielectric layer is 5nm to 10nm.
[0016] In one embodiment, the second low-emissivity functional layer is an Ag layer; and / or, the third barrier protective layer is a NiCr layer; and / or, the second crystal bed dielectric layer is an AZO layer; and / or, the thickness of the second low-emissivity functional layer is 9 nm to 14 nm; and / or, the thickness of the third barrier protective layer is 2 nm to 5 nm; and / or, the thickness of the second crystal bed dielectric layer is 5 nm to 10 nm.
[0017] In one embodiment, the coating layer further includes a fifth dielectric layer; the fifth dielectric layer is disposed on the side of the second composite layer away from the first composite layer;
[0018] Wherein, the fifth dielectric layer is a SiNx layer; and / or, the thickness of the fifth dielectric layer is 25nm to 40nm.
[0019] In one embodiment, the low-transparency tempered double-silver Low-E glass is made by sequentially coating and bending the glass substrate layer. During the bending process, the coated glass is heated to 695°C at a constant rate for 500 seconds.
[0020] In one embodiment, the coating layer further includes a transition protection layer; the transition protection layer is disposed between the second dielectric layer and the first barrier protection layer;
[0021] The transition protection layer includes a first transition layer and a second transition layer sequentially along one side of the second dielectric layer;
[0022] The first transition layer is a TiZnOx layer with a thickness of 4nm to 8nm; the second transition layer is a Cr layer with a thickness of 1nm to 2nm.
[0023] The technical solution of this utility model adds a NiCr barrier protective layer before and after the first low-emissivity functional layer in a medium-low transmittance temperable double-silver Low-E glass, ensuring stable bonding of the second dielectric layer, the first barrier protective layer, and the first low-emissivity functional layer after tempering. Furthermore, to further enhance the bonding strength between the second dielectric layer and the first barrier protective layer, this utility model also adds a transition protective layer, in which TiZnO is incorporated. xThe first layer and the second dielectric layer have a good interfacial bond, which can further reduce the risk of film cracking during the tempering process. In addition, the Cr layer in the transition protective layer during tempering can form stable Cr-O-Zn bonds at the interface under oxidation, which can alleviate the difference in the coefficient of thermal expansion (CTE) between ZnAlOx (brittle oxide) and NiCr (metal) and prevent interface peeling during tempering or temperature changes. Thus, the low-transmittance temperable double silver Low-E glass of this utility model can meet the requirements of being resistant to wiping, not easy to peel off, and not easy to burn during the tempering process while maintaining the product's transmittance, emissivity and other parameters without significant changes. Attached Figure Description
[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0025] Figure 1 This is a schematic diagram of the structure of a low-transparency tempered double-silver Low-E glass according to an embodiment of the present invention. Attached image description:
[0027] 1. Glass substrate layer; 2. Coating layer; 21. First composite layer; 211. First dielectric layer; 212. Second dielectric layer; 213. First barrier protection layer; 214. First low-emissivity functional layer; 215. Second barrier protection layer; 216. First crystal bed dielectric layer; 22. Second composite layer; 221. Third dielectric layer; 222. Fourth dielectric layer; 223. Second low-emissivity functional layer; 224. Third barrier protection layer; 225. Second crystal bed dielectric layer; 23. Fifth dielectric layer.
[0028] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0029] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.
[0030] It should be noted that if the embodiments of this utility model involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.
[0031] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," such descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features.
[0032] Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.
[0033] In conventional medium-low transmittance tempered double silver coated glass, the ZnAlOx dielectric layer and Ag low-emissivity functional layer in the composite layer near the glass substrate are not firmly bonded. Due to the long bending and tempering time in subsequent processes, the coating layer is prone to delamination and burn-out after tempering.
[0034] To solve the above-mentioned technical problems, this utility model provides a medium-low transparency tempered double silver Low-E glass.
[0035] Reference Figure 1 The low-to-medium transmittance double-silver Low-E glass of this invention includes a glass substrate layer 1 and a coating layer 2. The coating layer 2 is deposited on one side of the glass substrate layer 1 and includes a first composite layer 21. The first composite layer 21 includes a first dielectric composite layer, a first low-emissivity functional layer 214 and a first crystal bed dielectric layer 216 stacked sequentially. The first dielectric composite layer is adjacent to the glass substrate layer 1. The first composite layer 21 also includes a first barrier protection layer 213 and a second barrier protection layer 215 respectively disposed on adjacent sides of the first low-emissivity functional layer 214. The first barrier protection layer 213 is disposed between the first dielectric composite layer and the first low-emissivity functional layer 214, and the second barrier protection layer 215 is disposed between the first low-emissivity functional layer 214 and the first crystal bed dielectric layer 216.
[0036] In one embodiment, the first barrier protective layer 213 is a NiCr layer. The NiCr layer has a strong bonding ability with the ZnAlOx dielectric layer and the Ag low-emissivity functional layer. Therefore, in the steel bending process, the second dielectric layer 212, the first barrier protective layer 213, and the first low-emissivity functional layer 214 can be tightly bonded together, and problems such as film peeling and film burning will not occur.
[0037] Optionally, the second protective layer 215 is a NiCr layer. Compared with Ni or Cr, the NiCr alloy layer has better overall performance and density, and can effectively prevent Ag in the low-emissivity functional layer from being corroded by oxygen in the air or free oxygen in the crystal bed medium layer, thereby enabling the low-emissivity functional layer to function better and improving the durability of the medium-low transmittance steel double silver Low-E glass of this invention.
[0038] In one embodiment, the thickness of the first barrier layer 213 is 1 nm to 2 nm. The main difference between the low-transmittance tempered double-silver Low-E glass provided in this embodiment and existing Low-E glass is the addition of the first barrier layer 213 between the second dielectric layer 212 and the first low-emissivity functional layer 214, while simultaneously reducing the thickness of the second barrier layer 215. The main reason for reducing the thickness of the second barrier layer 215 is that the total thickness of the NiCr layer in the first composite layer 21 has a significant impact on parameters such as the transmittance and emissivity of the Low-E glass. Therefore, to maintain the product color of the Low-E glass and ensure that the transmittance of the Low-E glass is not affected, it is necessary to control the thickness of the first barrier layer 213 and the second barrier layer 215. To ensure that the setting of the first barrier layer 213 does not affect the optical properties of the Low-E glass, such as the transmittance and emissivity, the thickness of the first barrier layer 213 can be 1 nm, 1.5 nm, or 2 nm.
[0039] Optionally, the thickness of the second barrier layer 215 is 1-2 nm. In order for the second barrier layer 215 to protect the first low-emissivity functional layer 214, the thickness of the second barrier layer 215 is 1-2 nm, which can be 1 nm, 1.5 nm, or 2 nm.
[0040] In one embodiment, the first dielectric composite layer sequentially includes a first dielectric layer 211 and a second dielectric layer 212 along one side of the glass substrate layer 1. The first dielectric layer 211 is a SiNx layer. The dense structure of the silicon nitride layer effectively improves the flatness of the film and the adhesion between the layers, and also prevents ion penetration through the glass, avoiding damage to the low-emissivity functional layer. Simultaneously, the SiNx layer also serves as an anti-reflection layer, uniformly reflecting light on both sides and improving the anti-reflection effect of the coated glass. In this embodiment, the second dielectric layer 212 is a ZnAlOx layer. The ZnAlOx layer has good density, a small lattice structure, and smooth film formation, which provides excellent bonding. Optionally, the thickness of the first dielectric layer 211 is 20nm to 30nm; in order to give the first dielectric layer 211 a certain strength and effectively improve the adhesion between film layers and prevent ion penetration of glass, the thickness of the first dielectric layer 211 in this embodiment can be 20nm, 21nm, 23nm, 25nm, 27nm, or 30nm; Optionally, the thickness of the second dielectric layer 212 is 10nm to 15nm; in order to enable the second dielectric layer 212 to function, the thickness of the second dielectric layer 212 can be 10nm, 11nm, 12nm, 13nm, 14nm, or 15nm.
[0041] In one embodiment, the first low-emissivity functional layer 214 is an Ag layer. The Ag nanolayer exhibits high transmittance and low emissivity to visible light, satisfying both natural lighting requirements and good heat insulation. Optionally, the first crystal bed dielectric layer 216 is an AZO layer. It should be noted that AZO is aluminum-doped zinc oxide, with a smooth surface and dense structure. The use of an AZO layer can improve the adhesion of the film layers, allowing the silver layer to grow more smoothly and uniformly, thereby improving the overall stability and durability of the coating layer. Optionally, the thickness of the first low-emissivity functional layer 214 is 2nm to 4nm. To maintain the low emissivity and high transmittance of the Ag nanolayer, thus satisfying both indoor lighting and heat insulation effects, the thickness of the first low-emissivity functional layer 214 in this embodiment can be 2nm, 2.5nm, 3nm, or 4nm. Optionally, the thickness of the first crystal bed dielectric layer 216 is 5nm to 10nm; in order to ensure that the first crystal bed dielectric layer 216 can function, the thickness of the first crystal bed dielectric layer 216 in this embodiment can be 5nm, 6nm, 6.5nm, 7nm, 8nm, 9nm and 10nm.
[0042] In one embodiment, the coating layer 2 further includes a second composite layer 22; the second composite layer 22 includes a second dielectric composite layer, a second low-emissivity functional layer 223, a third barrier protective layer 224, and a second crystal bed dielectric layer 225 stacked sequentially, with the second dielectric composite layer and the first crystal bed dielectric layer 216 disposed adjacent to each other. The applicant found that the probability of the second composite layer 22 delaminating or burning during the bending and tempering process is very low. Therefore, the original structure of the second composite layer was retained in the design to prevent a decrease in the optical properties of the coated glass, such as light transmittance, due to the addition of the barrier protective layer.
[0043] In one embodiment, the second dielectric composite layer includes a third dielectric layer 221 and a fourth dielectric layer 222 sequentially along one side of the first crystal bed dielectric layer 216. Specifically, the third dielectric layer 221 is a SiNx layer. It should be noted that the dense structure of the silicon nitride layer can effectively improve the flatness of the film and the firmness between the film layers, and can also prevent ion penetration of the glass, avoiding damage to the low-emissivity functional layer. At the same time, the SiNx layer also serves as an anti-reflection layer, which can uniformly reflect the light between its two sides, improving the anti-reflection effect of the coated glass. Specifically, the fourth dielectric layer 222 is a ZnAlOx layer. The ZnAlOx layer has a good density, and its small lattice structure and smooth film formation can play a good bonding role. Optionally, the thickness of the third dielectric layer 221 is 50nm to 70nm. It should be noted that the thickness of the third dielectric layer 221 is significantly greater than that of the first dielectric layer 211. This is because when light shines from the outside in, the third dielectric layer 221 is penetrated by the light before the first dielectric layer 211. Furthermore, the third dielectric layer 221 is located between two low-emissivity functional layers. To ensure the anti-reflection effect of the coated glass and improve the adhesion between the film layers, the thickness of the third dielectric layer 221 can be 50nm, 53nm, 55nm, 58nm, 60nm, 63nm, 65nm, 68nm, and 70nm. Optionally, the thickness of the fourth dielectric layer 222 is 5nm to 10nm. Specifically, to ensure that the fourth dielectric layer 222 provides good adhesion between the film layers, the thickness of the fourth dielectric layer 222 can be 5nm, 6nm, 8nm, 9nm, and 10nm.
[0044] In one embodiment, the second low-emissivity functional layer 223 is an Ag layer. The Ag nanolayer has high transmittance and low emissivity to visible light, which can meet the requirements of natural lighting and has a good heat insulation effect. Optionally, the third barrier protective layer 224 is a NiCr layer. The NiCr alloy layer has better comprehensive performance and density than the Ni layer or Cr, which can effectively prevent the Ag in the low-emissivity functional layer from being corroded by oxygen in the air or free oxygen in the crystal bed dielectric layer, so that the low-emissivity functional layer can play a better role. Optionally, the second crystal bed dielectric layer 225 is an AZO layer. The use of the AZO layer can improve the bonding of the film layer, so that the silver layer can grow more smoothly and uniformly, thereby improving the overall stability and durability of the coating layer.
[0045] Optionally, the thickness of the second low-emissivity functional layer 223 is 9nm to 14nm. To better enable the second low-emissivity functional layer 223 to perform its light-transmitting and heat-insulating effects, the thickness of the second low-emissivity functional layer 223 can be 9nm, 10nm, 11nm, 12nm, 13nm, or 14nm. Optionally, the thickness of the third barrier protective layer 224 is 2nm to 5nm. To enable the third barrier protective layer 224 to perform its protective function against the low-emissivity functional layer, the thickness of the third barrier protective layer 224 can be 2nm, 3nm, 3.5nm, 4nm, or 5nm. Optionally, the thickness of the second crystal bed dielectric layer 225 is 5nm to 10nm. To enable the second crystal bed dielectric layer to function, the thickness of the second crystal bed dielectric layer 225 can be 5nm, 6nm, 8nm, or 10nm.
[0046] In one embodiment, the coating layer 2 further includes a fifth dielectric layer 23; the fifth dielectric layer 23 is disposed on the side of the second composite layer 22 away from the first composite layer 21; specifically, the fifth dielectric layer 23 is a SiNx layer, the fifth dielectric layer 23 is the surface coating of the coated glass, and the NiCr alloy layer has better comprehensive performance, better density, and high hardness than the Ni layer or Cr, thereby ensuring that the film layer has good wear and scratch resistance, and also increasing the stability of the film layer, so that the coated glass can be tempered both flat and bent, and after tempering, the film layer is smooth and free from defects such as cracking and delamination; optionally, the thickness of the fifth dielectric layer 23 is 25nm to 40nm. In order to enable the fifth dielectric layer 23 to play a better supporting and protective role for the coated glass, the thickness of the fifth dielectric layer 23 can be 25nm, 28nm, 30nm, 31nm, 33nm, 36nm, 38nm, and 40nm.
[0047] In a preferred embodiment, the coating layer further includes a transition protection layer; the transition protection layer is disposed between the second dielectric layer and the first barrier protection layer; the transition protection layer includes a first transition layer and a second transition layer sequentially along one side of the second dielectric layer; further, the first transition layer is a TiZnOx layer with a thickness of 4nm to 8nm; the second transition layer is a Cr layer with a thickness of 1nm to 2nm.
[0048] It should be noted that the TiZnO in the transition protective layer x The first dielectric layer exhibits good interfacial compatibility with the second dielectric layer. The spinel structure of TiZnOx combines hardness and toughness, serving as a transition layer to suppress crack propagation and enhance the impact resistance of the film. During tempering, the Cr layer, due to oxidation, forms stable Cr-O-Zn bonds at the interface while simultaneously generating a dense Cr2O3 film. The ductility of the Cr layer alleviates the difference in the coefficient of thermal expansion (CTE) between the second dielectric layer and the first barrier protective layer, preventing interfacial delamination during tempering or temperature changes. Furthermore, the TiZnOx layer in the transition protective layer exhibits selective absorption and reflection characteristics for visible light. By adjusting its thickness, the visible light transmittance can be adjusted, resulting in a neutral, natural gray hue for the coated glass.
[0049] Furthermore, in the first transition layer, the weight percentage of Zn in the TiZnOx layer is 20% to 30%. It should be noted that under this ratio, a more prominent spinel structure can be formed in the TiZnOx layer, which further suppresses crack propagation and enhances the impact resistance of the film.
[0050] In one embodiment, the coating layer has good low-emissivity properties, and the color is basically the same when viewed from the side and from the front, resulting in a good aesthetic appearance.
[0051] In one specific embodiment, the fabrication process of medium-low transmittance temperable double-silver Low-E glass is as follows:
[0052] (1) Sputter deposition of the first dielectric layer 211 on the glass substrate layer 1:
[0053] Number of targets: 2-3 AC rotating targets; target material configuration: silicon-aluminum (SiAl); process gas ratio: argon and nitrogen, with an argon to nitrogen ratio of 1:1.2; sputtering pressure: 2.5-8.5 × 10⁻⁶. -3 mbar; coating thickness is 20-30nm;
[0054] (2) Sputtering a second dielectric layer 212 onto the first dielectric layer 211:
[0055] Number of targets: 1-2 AC rotating targets; target material configuration: zinc-aluminum (ZnAl); process gas ratio: argon to oxygen ratio of 1:1.3, sputtering pressure of 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 10-15nm;
[0056] (3) Sputtering and depositing a first barrier protective layer 213 on the second dielectric layer 212:
[0057] Number of targets: 1 DC planar target; target configuration: NiCr; process gas: pure argon, sputtering pressure: 2.5-5.5 × 10⁻⁶. -3 mbar; coating thickness is 1-2 nm;
[0058] (4) Sputter-deposit a first low-emissivity functional layer 214 on the first barrier protective layer 213:
[0059] Target quantity: 1 DC planar target; target material configuration: silver (Ag); process gas: pure argon, sputtering pressure: 2.5-5.5×10⁻⁶. -3 mbar; coating thickness is 2-4 nm;
[0060] (5) Sputter-deposit a second barrier protective layer 215 on the first low-emissivity functional layer 214:
[0061] Number of targets: 1 DC planar target; target configuration: NiCr; process gas: pure argon, sputtering pressure: 2.5-5.5 × 10⁻⁶. -3 mbar; coating thickness is 1-2 nm;
[0062] (6) Sputtering and depositing the first crystal bed dielectric layer 216 on the second barrier protective layer 215:
[0063] Target quantity: 1 AC rotating target; target material configuration: aluminum zinc oxide (AZO); process gas: pure argon, sputtering pressure: 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 5-10nm;
[0064] (7) Sputtering and depositing a third dielectric layer 221 on the first crystal bed dielectric layer 216:
[0065] Number of targets: 6-8 AC rotating targets; target material configuration: silicon-aluminum (SiAl); process gas: argon and nitrogen in a ratio of 1:1.3, sputtering pressure: 2.5-8.5 × 10⁻⁶. -3 mbar; coating thickness is 50-70nm;
[0066] (8) Sputter deposition of a fourth dielectric layer 222 on the third dielectric layer 221:
[0067] Number of targets: 1-2 AC rotating targets; target material configuration: zinc-aluminum (ZnAl); process gas: argon to oxygen ratio of 1:1.3, sputtering pressure of 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 5-10nm;
[0068] (9) Sputter deposit a second low-emissivity functional layer 223 on the fourth dielectric layer 222:
[0069] Target quantity: 1 DC planar target; target material configuration: silver (Ag); process gas ratio: pure argon, sputtering pressure: 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 9-14nm;
[0070] (10) Sputter-deposit a third barrier protective layer 224 on the second low-emissivity functional layer 223:
[0071] Target quantity: 1 DC planar target; target configuration: NiCr; process gas: pure argon, sputtering pressure: 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 2-5nm;
[0072] (11) Sputter deposition of a second bed dielectric layer 225 on the third barrier protective layer 224:
[0073] Target quantity: 1 AC rotating target; target material configuration: aluminum zinc oxide (AZO); process gas: pure argon, sputtering pressure: 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 5-10nm;
[0074] (12) Sputter-deposit a first dielectric layer 23 on the second crystal bed dielectric layer 225;
[0075] Number of targets: 3-6 AC rotating targets; target material configuration: silicon-aluminum (SiAl); process gas ratio: argon to nitrogen ratio of 1:1.3, sputtering pressure of 2.5-8.5×10⁻⁶. -3 mbar; coating thickness is 25-40nm.
[0076] The travel speed of the sputtering chamber is controlled at 3-4.5 m / min.
[0077] The present invention will be further described below through specific embodiments and corresponding performance:
[0078] Example 1
[0079] In this embodiment, the low-transmittance tempered double-silver Low-E glass has a coating layer consisting of a first composite layer, a second composite layer, and a fifth dielectric layer stacked sequentially along one side of the glass substrate layer. The first composite layer includes a first dielectric layer, a second dielectric layer, a first barrier protective layer, a first low-emissivity functional layer, a second barrier protective layer, and a first crystal bed dielectric layer stacked sequentially along one side of the glass substrate layer. The second composite layer and the first crystal bed dielectric layer are adjacent to each other. The second composite layer includes a third dielectric layer, a fourth dielectric layer, a second low-emissivity functional layer, a third barrier protective layer, and a second crystal bed dielectric layer stacked sequentially along one side of the first composite layer. The fifth dielectric layer is adjacent to the second crystal bed dielectric layer.
[0080] In this embodiment, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first barrier layer is a NiCr layer with a thickness of 1 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier layer is a NiCr layer with a thickness of 2 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the second low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier layer is a NiCr layer with a thickness of 4 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0081] Example 2
[0082] The low-transmittance tempered double-silver Low-E glass in this embodiment is based on Example 1, with the difference being that the thickness of each film layer in the coating layer in Example 2 is different from that in Example 1, as specifically shown below:
[0083] In this embodiment, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first barrier layer is a NiCr layer with a thickness of 2 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier layer is a NiCr layer with a thickness of 1 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the second low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier layer is a NiCr layer with a thickness of 4 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0084] Example 3
[0085] The low-transmittance tempered double-silver Low-E glass in this embodiment is based on Example 1, with the difference being that the thickness of each film layer in the coating layer in Example 3 differs from that in Example 1, as specifically shown below:
[0086] In this embodiment, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first barrier protective layer is a NiCr layer with a thickness of 2 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier protective layer is a NiCr layer with a thickness of 2 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier protective layer is a NiCr layer with a thickness of 5 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0087] Example 4
[0088] The low-to-medium transmittance tempered double-silver Low-E glass in this embodiment is based on Embodiment 1, with the difference being that: in Embodiment 4, a transition protective layer is further provided between the second dielectric layer and the first barrier protective layer in the coating layer, wherein the first transition layer is TiZnO. x The first layer is 8 nm thick; the second transition layer is a Cr layer with a thickness of 1.5 nm.
[0089] The preparation process of Example 4 is based on Example 1, and also includes:
[0090] The fabrication parameters for the first transition layer are:
[0091] Number of targets: 1-2 AC rotating targets; target configuration: zinc-titanium (ZnTi, where the molar ratio of Zn to Ti is approximately (1.5-2):1); process gas: argon and oxygen in a ratio of 1:1.3, sputtering pressure 2.5-8.5 × 10⁻⁶. -3 mbar; coating thickness is 8nm.
[0092] The preparation parameters for the second transition layer are:
[0093] Target quantity: 1 DC planar target; target material configuration: Cr; process gas ratio: pure argon, sputtering pressure: 2.5-8.5×10⁻⁶ -3 mbar; coating thickness is 1.5nm.
[0094] Comparative Example 1
[0095] The low-to-medium transmittance tempered double-silver Low-E glass in Comparative Example 1 is based on Example 2, with the difference being that the coating layer in Comparative Example 1 does not have a first barrier protective layer, and the thickness of the second barrier protective layer is the sum of the thicknesses of the first and second barrier protective layers in Example 2. The specific structure of the coating layer in Comparative Example 1 is as follows:
[0096] The coating layer comprises a first composite layer, a second composite layer, and a fifth dielectric layer stacked sequentially along one side of the glass substrate layer; the first composite layer includes a first dielectric layer, a second dielectric layer, a first low-emissivity functional layer, a second barrier protective layer, and a first crystal bed dielectric layer stacked sequentially along one side of the glass substrate layer; the second composite layer is disposed adjacent to the first crystal bed dielectric layer, and the second composite layer includes a third dielectric layer, a fourth dielectric layer, a second low-emissivity functional layer, a third barrier protective layer, and a second crystal bed dielectric layer stacked sequentially along one side of the first crystal bed dielectric layer; the fifth dielectric layer is disposed adjacent to the second crystal bed dielectric layer.
[0097] In Comparative Example 1, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier protective layer is a NiCr layer with a thickness of 3 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier protective layer is a NiCr layer with a thickness of 4 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0098] Comparative Example 2
[0099] The low-to-medium transmittance tempered double-silver Low-E glass in Comparative Example 2 is based on Example 2, with the difference being that the coating layer in Comparative Example 2 does not have a first barrier protective layer, and the thickness of the second barrier protective layer is greater than the sum of the thicknesses of the first and second barrier protective layers in Example 2. The specific structure of the coating layer in Comparative Example 2 is as follows:
[0100] In Comparative Example 2, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier protective layer is a NiCr layer with a thickness of 5 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the second low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier protective layer is a NiCr layer with a thickness of 4 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0101] Comparative Example 3
[0102] The low-transparency tempered double-silver Low-E glass in Comparative Example 3 is based on Example 2, with the difference that: the first barrier protective layer is not provided in the coating layer of Comparative Example 3, while the thickness of the second barrier protective layer remains unchanged. The specific structure of the coating layer in Comparative Example 3 is as follows:
[0103] In Comparative Example 3, the thickness of the glass substrate layer is 6 mm; the first dielectric layer is a SiNx layer with a thickness of 20 nm; the second dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the first low-emissivity functional layer is an Ag layer with a thickness of 3 nm; the second barrier protective layer is a NiCr layer with a thickness of 1 nm; the first crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; the third dielectric layer is a SiNx layer with a thickness of 50 nm; the fourth dielectric layer is a ZnAlOx layer with a thickness of 10 nm; the second low-emissivity functional layer is an Ag layer with a thickness of 10 nm; the third barrier protective layer is a NiCr layer with a thickness of 4 nm; the second crystal bed dielectric layer is an AZO layer with a thickness of 10 nm; and the fifth dielectric layer is a SiNx layer with a thickness of 25 nm.
[0104] Performance testing:
[0105] 1. The emissivity ε, SHGC, and visible light transmittance Tv of the low-to-medium transmittance double-silver Low-E glass prepared in Examples 1-3 and Comparative Examples 1-3 were measured, and the measurement results were analyzed.
[0106] 2. The low-to-medium transmittance temperable double-silver Low-E glass prepared in Examples 1-3 and Comparative Examples 1-3 were subjected to bending and tempering treatment, the specific process of which included:
[0107] Adjust the curvature of the curved air grating according to the required curvature. After adjustment, lower the curved air grating and wait for the glass to fully enter the curved air grating after heating. Then lift it up. Place the 6mm medium-low transparency temperable double silver Low-E glass with the coating layer facing upwards into the horizontal tempering furnace. Set the tempering furnace temperature to 770℃. After heating the glass for 500 seconds, uniformly heat it to 695℃, and then quickly put it into the curved air grating section. After the glass is fully inside the curved air grating section, quickly lift the curved air grating according to the preset curvature. Then open the air grating fan damper to uniformly cool the glass at a cooling rate of 20-30℃ / s. The glass will oscillate back and forth inside the curved air grating at a oscillation speed of 100-200mm / s. After the glass cools to 30-60℃, you will obtain 6mm medium-low transparency temperable double silver Low-E glass.
[0108] The appearance of 6mm medium-low transparency tempered double silver Low-E glass after bending and tempering was observed to check whether its appearance was good and whether the film layer had peeled off or burned.
[0109] In the above embodiments or comparative performance testing process, the average value or common phenomenon was taken by repeating the test 10 times. The performance test results are shown in Table 1.
[0110]
[0111]
[0112] Table 1
[0113] Analysis of the data in Table 1 shows that the third dielectric layer, the first barrier protective layer, and the first low-emissivity functional layer in the coating layer of the low-transmittance temperable double-silvered Low-E glass produced in this invention remain stably bonded after tempering. This ensures that the low-transmittance temperable double-silvered Low-E glass of this invention maintains the same parameters as the product in terms of transmittance and emissivity without significant changes, while also meeting the requirements of being resistant to wiping, not easily peeling off, and not easily burned during the tempering process.
[0114] The above description is merely an exemplary embodiment of the present utility model and does not limit the patent scope of the present utility model. Any equivalent structural transformations made based on the technical concept of the present utility model and the contents of the present utility model specification and drawings, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present utility model.
Claims
1. A medium-low transmittance tempered double-silver Low-E glass, characterized in that, The low-transparency tempered double-silver Low-E glass includes: Glass substrate layer; and A coating layer is deposited on one side of the glass substrate layer. The coating layer includes a first composite layer. The first composite layer includes a first dielectric combination layer, a first low-emissivity functional layer and a first crystal bed dielectric layer stacked sequentially. The first dielectric combination layer is disposed adjacent to the glass substrate layer. The first composite layer further includes a first barrier protection layer and a second barrier protection layer respectively disposed on adjacent sides of the first low-emissivity functional layer. The first barrier protection layer is disposed between the first dielectric composite layer and the first low-emissivity functional layer, and the second barrier protection layer is disposed between the first low-emissivity functional layer and the first crystal bed dielectric layer.
2. The low-transmittance tempered double-silver Low-E glass as described in claim 1, characterized in that, The first barrier protective layer is a NiCr layer; And / or, the second barrier protective layer is a NiCr layer.
3. The low-transmittance tempered double-silver Low-E glass as described in claim 1, characterized in that, The thickness of the first barrier protective layer is 1nm~2nm; And / or, the thickness of the second barrier protective layer is 1nm~2nm.
4. The low-transmittance tempered double-silver Low-E glass as described in claim 1, characterized in that, The first dielectric composite layer includes a first dielectric layer and a second dielectric layer sequentially along one side of the glass substrate layer; Wherein, the first dielectric layer is a SiNx layer, and the second dielectric layer is a ZnAlOx layer; and / or, the thickness of the first dielectric layer is 20nm~30nm; and / or, the thickness of the second dielectric layer is 10nm~15nm.
5. The low-transmittance tempered double-silver Low-E glass as described in claim 1, characterized in that, The first low-emissivity functional layer is an Ag layer; And / or, the first crystal bed dielectric layer is an AZO layer; And / or, the thickness of the first low-emissivity functional layer is 2nm~4nm; And / or, the thickness of the first crystal bed dielectric layer is 5nm~10nm.
6. The low-transmittance tempered double-silver Low-E glass as described in any one of claims 1 to 5, characterized in that, The coating layer also includes a second composite layer; The second composite layer includes a second dielectric composite layer, a second low-emissivity functional layer, a third barrier protective layer, and a second crystal bed dielectric layer stacked sequentially, with the second dielectric composite layer and the first crystal bed dielectric layer disposed adjacent to each other.
7. The low-to-medium transmittance tempered double-silver Low-E glass as described in claim 6, characterized in that, The second dielectric composite layer includes a third dielectric layer and a fourth dielectric layer sequentially along one side of the first crystal bed dielectric layer; Wherein, the third dielectric layer is a SiNx layer, and the fourth dielectric layer is a ZnAlOx layer; and / or, the thickness of the third dielectric layer is 50nm~70nm; and / or, the thickness of the fourth dielectric layer is 5nm~10nm.
8. The low-to-medium transmittance tempered double-silver Low-E glass as described in claim 6, characterized in that, The second low-emissivity functional layer is an Ag layer; And / or, the third barrier protective layer is a NiCr layer; And / or, the second crystal bed dielectric layer is an AZO layer; And / or, the thickness of the second low-emissivity functional layer is 9nm~14nm; And / or, the thickness of the third barrier protective layer is 2nm~5nm; And / or, the thickness of the second crystal bed dielectric layer is 5nm~10nm.
9. The low-to-medium transmittance tempered double-silver Low-E glass as described in claim 6, characterized in that, The coating layer further includes a fifth dielectric layer; the fifth dielectric layer is disposed on the side of the second composite layer away from the first composite layer; Wherein, the fifth dielectric layer is a SiNx layer; and / or, the thickness of the fifth dielectric layer is 25nm~40nm.
10. The low-transmittance tempered double-silver Low-E glass as described in claim 4, characterized in that, The coating layer further includes a transition protection layer; the transition protection layer is disposed between the second dielectric layer and the first barrier protection layer; The transition protection layer includes a first transition layer and a second transition layer sequentially along one side of the second dielectric layer; The first transition layer is TiZnO. x The first layer has a thickness of 4nm to 8nm; the second transition layer is a Cr layer with a thickness of 1nm to 2nm.