Atomic layer deposition equipment
By integrating substrate delivery, preheating, thin film deposition, and cooling functions, the problems of production continuity and uneven heating have been solved, achieving efficient and uniform thin film deposition and improving production efficiency and thin film quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN XINQIBIN TECHNOLOGY DEVELOPMENT CO LTD
- Filing Date
- 2025-05-27
- Publication Date
- 2026-05-05
AI Technical Summary
Existing atomic layer deposition equipment suffers from poor production continuity and functional integration, and uneven substrate heating results in poor film thickness uniformity.
Design an atomic layer deposition equipment that integrates substrate transport, preheating, thin film deposition and cooling functions. The preheating chamber, process chamber and cooling chamber operate independently. The uniformity of substrate heating is ensured by the transport device and heating elements. The heating method combines radiation and heat conduction.
It improves production efficiency and substrate heating uniformity, enhances film formation quality and manufacturing efficiency, and ensures consistent film thickness.
Smart Images
Figure CN224199471U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to an atomic layer deposition apparatus. Background Technology
[0002] Atomic layer deposition (ALD) is a technique that controls thin film growth at the atomic level. Thin films deposited using this technique are of excellent quality, have high density, few defects, and are suitable for deposition on complex surfaces. It is widely used in the semiconductor and photovoltaic manufacturing industries.
[0003] In related technologies, atomic layer deposition (ALD) mainly involves multiple processes such as substrate preheating, ALD film deposition, substrate cooling, and substrate transport. Existing equipment suffers from poor production continuity and functional integration, which affects ALD efficiency. Furthermore, substrate preheating is typically achieved through external heating elements via radiation, and this indirect heating method leads to uneven temperature distribution on the substrate, resulting in poor uniformity of the deposited ALD film thickness. In addition, most commercially available ALD equipment is currently an independent operating structure, unable to meet the requirements of continuous and automated production. Utility Model Content
[0004] The purpose of this invention is to provide an atomic layer deposition equipment that integrates functions such as substrate conveying, preheating, thin film deposition, and cooling. Each process is carried out independently without affecting the others, thereby improving production efficiency and effectively enhancing the uniformity and reliability of substrate heating.
[0005] To achieve this objective, the present invention adopts the following technical solution:
[0006] An atomic layer deposition apparatus, comprising:
[0007] A preheating chamber, having a preheating cavity for heating the substrate;
[0008] The process chamber has a reaction chamber for depositing an atomic layer thin film on the heated substrate, and a first gate valve is provided between the reaction chamber and the preheating chamber;
[0009] A cooling chamber is provided for cooling the substrate after the atomic layer film has been deposited, and a second valve is provided between the cooling chamber and the reaction chamber;
[0010] A conveying device is used to sequentially convey the substrate between the preheating chamber, the reaction chamber and the cooling chamber, and the conveying device is provided with a first heating element for heating the substrate.
[0011] Preferably, the preheating chamber includes a first chamber body, a second heating element, and a first vacuum pump. The preheating chamber is opened in the first chamber body, the second heating element is disposed in the preheating chamber, and the first vacuum pump is used to evacuate the preheating chamber.
[0012] Preferably, the second heating element is located at the top of the preheating chamber, and the second heating element is configured as a heating wire.
[0013] Preferably, the conveying device includes a moving part and a carrier plate, the carrier plate is disposed on the moving part, the first heating element is disposed on the carrier plate, the substrate is loaded on the first heating element and in contact with the first heating element, and the moving part is used to drive the carrier plate to move so as to move the substrate sequentially to the preheating chamber, the reaction chamber and the cooling chamber.
[0014] Preferably, the moving part is configured to be rotatably connected to a plurality of drive wheels on the carrier plate.
[0015] Preferably, the process chamber includes a second chamber body, a spray head, and a second vacuum pump. The reaction chamber is located within the second chamber body, and the second chamber body has an exhaust channel communicating with the reaction chamber. The spray head is located within the reaction chamber and is used to spray precursor gas into the reaction chamber. The second vacuum pump is used to evacuate the reaction chamber.
[0016] Preferably, the second chamber body has a scavenging hole communicating with the reaction chamber, the scavenging hole being used to introduce inert gas to purge excess precursor gas on the substrate.
[0017] Preferably, the cooling chamber includes a third chamber body, a cooling component, and a third vacuum pump. The cooling chamber is located within the third chamber body, the cooling component is located within the cooling chamber, and the third vacuum pump is used to evacuate the cooling chamber.
[0018] Preferably, the cooling element is located at the top of the cooling cavity, and the cooling element is configured as a cooling air vent.
[0019] Preferably, it also includes:
[0020] A loading stage is used to place the substrate to be preheated, and a third valve is provided between the preheating chamber and the loading stage;
[0021] The substrate unloading platform is used to place the cooled substrate, and a fourth valve is provided between the cooling chamber and the substrate unloading platform.
[0022] Beneficial effects:
[0023] The atomic layer deposition apparatus provided by this invention includes a preheating chamber, a process chamber, and a cooling chamber arranged sequentially, and also includes a conveying device. The preheating chamber has a preheating cavity, the process chamber has a reaction cavity, and the cooling chamber has a cooling cavity. The conveying device is capable of loading a substrate and sequentially conveying the substrate between the preheating chamber, the reaction chamber, and the cooling chamber. A first valve is provided between the preheating chamber and the reaction chamber, and a second valve is provided between the reaction chamber and the cooling chamber. When the preheating chamber, the reaction chamber, and the cooling chamber are operating independently, the first and second valves are closed. The preheating chamber preheats the substrate before film deposition, the reaction chamber deposits the preheated substrate, and the cooling chamber cools the deposited substrate. The three chambers operate simultaneously and independently without interference. When the work in the preheating chamber, reaction chamber, and cooling chamber is completed and the substrate needs to be transported to the downstream process, the first valve and the second valve open. The substrate in the preheating chamber is transported to the reaction chamber, the substrate in the reaction chamber is transported to the cooling chamber, and the substrate in the cooling chamber is transported out of the cooling chamber. The upstream and downstream processes can be continuously connected, effectively improving functional integration and manufacturing efficiency.
[0024] In addition, the conveying device is equipped with a first heating element. During the preheating stage of the substrate, the preheating cavity can heat the substrate together with the first heating element. The substrate is placed inside the preheating cavity, and the preheating cavity heats the substrate by radiation heating. The first heating element placed on the conveying device simultaneously heats the substrate by heat conduction, ensuring the uniformity and reliability of substrate heating and ensuring the film quality of subsequent deposited thin films. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the main components of the atomic layer deposition equipment provided by this utility model;
[0026] Figure 2 This is a schematic diagram of the preheating chamber provided by this utility model;
[0027] Figure 3 This is a schematic diagram of the structure of the process chamber provided by this utility model;
[0028] Figure 4 This is a schematic diagram of the structure of the spray head provided by this utility model;
[0029] Figure 5 This is a partial structural diagram of the spray hole portion provided by this utility model;
[0030] Figure 6 This is a partial structural schematic diagram of the scavenging hole portion provided by this utility model;
[0031] Figure 7 This is a schematic diagram of the cooling chamber structure provided by this utility model;
[0032] Figure 8 This is a structural schematic diagram of the cooling component provided by this utility model.
[0033] In the picture:
[0034] 1. Preheating chamber; 101. Preheating chamber; 11. First chamber body; 12. Second heating element; 13. First vacuum pump;
[0035] 2. Process chamber; 201. Reaction chamber; 21. Second chamber body; 211. Exhaust duct; 212. Scavenging port; 2121. Conical orifice; 2122. First stepped orifice; 2123. Second stepped orifice; 22. Spray head; 2201. First flow space; 2202. Second flow space; 2203. Upper shell; 2204. Lower plate; 221. Air inlet; 222. Spray chamber; 223. Spray hole; 2231. First hole; 2232. Buffer chamber; 2233. Second hole; 224. Guide plate; 2241. Guide hole; 2242. Fixing column; 23. Second vacuum pump;
[0036] 3. Cooling chamber; 301. Cooling chamber; 31. Third chamber body; 32. Cooling component; 321. Air outlet; 33. Third vacuum pump;
[0037] 4. Conveying device; 41. Moving part; 42. Carrier plate; 43. First heating element;
[0038] 5. Loading the film;
[0039] 6. Unloading platform;
[0040] 71. First valve; 72. Second valve; 73. Third valve; 74. Fourth valve. Detailed Implementation
[0041] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.
[0042] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0043] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0044] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.
[0045] This embodiment provides an atomic layer deposition apparatus. (Refer to...) Figures 1 to 8 As shown, the atomic layer deposition equipment includes a preheating chamber 1, a process chamber 2, a cooling chamber 3, and a transport chamber. The preheating chamber 1 has a preheating cavity 101 for heating the substrate. The process chamber 2 has a reaction chamber 201 for depositing an atomic layer thin film on the heated substrate. A first valve 71 is provided between the reaction chamber 201 and the preheating chamber 101. The cooling chamber 3 has a cooling chamber 301 for cooling the substrate after atomic layer film deposition. A second valve 72 is provided between the cooling chamber 301 and the reaction chamber 201. A transport device 4 is used to sequentially transport the substrate between the preheating chamber 101, the reaction chamber 201, and the cooling chamber 301. The transport device 4 is equipped with a first heating element 43 for heating the substrate.
[0046] In this embodiment, the atomic layer deposition apparatus includes a preheating chamber 1, a process chamber 2, and a cooling chamber 3 arranged sequentially, and also includes a conveying device 4. The preheating chamber 1 has a preheating cavity 101, the process chamber 2 has a reaction cavity 201, and the cooling chamber 3 has a cooling cavity 301. The conveying device 4 can load a substrate and sequentially convey the substrate between the preheating cavity 101, the reaction cavity 201, and the cooling chamber 301. A first valve 71 is provided between the preheating cavity 101 and the reaction cavity 201, and a second valve 72 is provided between the reaction cavity 201 and the cooling chamber 301. When the preheating cavity 101, the reaction cavity 201, and the cooling chamber 301 are operating independently, the first valve 71 and the second valve 72 are closed. The preheating cavity 101 preheats the substrate before film deposition, the reaction cavity 201 deposits a film on the preheated substrate, and the cooling chamber 301 cools the deposited substrate. The three chambers operate simultaneously and independently without interference. When the work in the preheating chamber 101, reaction chamber 201, and cooling chamber 301 is completed and the substrate needs to be transported to the downstream process, the first valve 71 and the second valve 72 are opened. The substrate in the preheating chamber 101 is transported to the reaction chamber 201, the substrate in the reaction chamber 201 is transported to the cooling chamber 301, and the substrate inside the cooling chamber 301 is transported out of the cooling chamber 301. The upstream and downstream processes can be continuously connected, effectively improving functional integration and manufacturing efficiency.
[0047] In addition, the conveying device 4 is equipped with a first heating element 43. During the preheating stage of the substrate, the preheating cavity 101 and the first heating element 43 can heat the substrate together. The substrate is placed inside the preheating cavity 101, and the preheating cavity 101 heats the substrate by radiation heating. The first heating element 43 placed on the conveying device 4 simultaneously heats the substrate by heat conduction, ensuring the uniformity and reliability of the substrate heating and ensuring the film quality of the subsequent deposited thin film.
[0048] In this embodiment, the preheating chamber 1 includes a first chamber body 11, a second heating element 12, and a first vacuum pump 13. The preheating chamber 101 is formed within the first chamber body 11, the second heating element 12 is disposed within the preheating chamber 101, and the first vacuum pump 13 is used to evacuate the preheating chamber 101. Specifically, the substrate is heated by the first heating element 43 and the second heating element 12 working together. The first heating element 43 heats the substrate through contact heat conduction, while the second heating element 12 heats the substrate through thermal radiation, effectively ensuring the uniformity and reliability of the substrate heating. Furthermore, the first vacuum pump 13 is used to evacuate the preheating chamber 101, thereby providing a vacuum environment within the preheating chamber 101.
[0049] For example, the first vacuum pump 13 is selected from either a dry pump or a rotary vane pump.
[0050] Specifically, the preset heating temperature within the preheating chamber 101 is typically 100-300°C. The vacuum level within the preheating chamber 101 is maintained at 10... -2 -10 -1 mbar.
[0051] For example, a first heating element 43 is disposed on a conveying device and is configured as a contact substrate heater. A second heating element 12 is located at the top of the preheating chamber 101 and is configured as a heating wire. Specifically, the first heating element 43 is disposed at the bottom of the substrate and the second heating element 12 is disposed at the top of the substrate, thereby enabling uniform heating of the substrate.
[0052] In this embodiment, the conveying device 4 includes a moving part 41 and a carrier plate 42. The carrier plate 42 is disposed on the moving part 41, and a first heating element 43 is disposed on the carrier plate 42. The substrate is loaded onto and in contact with the first heating element 43. The moving part 41 is used to drive the carrier plate 42 to move so that the substrate is sequentially moved to the preheating chamber 101, the reaction chamber 201, and the cooling chamber 301. Driven by the moving part 41, the carrier plate 42 can be moved, thereby sequentially conveying the loaded substrate between the preheating chamber 101, the reaction chamber 201, and the cooling chamber 301.
[0053] For example, a groove is provided on the carrier plate 42, and the substrate is embedded in the groove.
[0054] For example, the first heating element 43 is located below the substrate and is capable of direct heat conduction heating of the lower side of the substrate.
[0055] In this embodiment, the moving part 41 is configured as a plurality of drive wheels rotatably connected to the carrier plate 42. Specifically, the drive wheels rotate via a motor or other drive component, thereby driving the carrier plate 42 to move.
[0056] This embodiment is not limited to this. The moving part 41 can also be configured as multiple conveyor belts. The multiple conveyor belts are respectively placed in the preheating chamber 101, the reaction chamber 201 and the cooling chamber 301. The carrier plate 42 is placed on the conveyor belts. The directional transport of the carrier plate 42 and the substrate can also be realized by multiple conveyor belts.
[0057] In this embodiment, the process chamber 2 includes a second chamber body 21, a spray head 22, and a second vacuum pump 23. The reaction chamber 201 is located within the second chamber body 21, which has an exhaust duct 211 communicating with the reaction chamber 201. The spray head 22 is located within the reaction chamber 201 and is used to spray precursor gas into the reaction chamber 201. The second vacuum pump 23 is used to evacuate the reaction chamber 201. Specifically, a first valve 71 is located between the preheating chamber 101 and the reaction chamber 201. The first chamber body 11 and the second chamber body 21 can share a common wall, and the first valve 71 is located on this wall. The second vacuum pump 23 provides a vacuum environment for the reaction chamber 201, allowing gas within the reaction chamber 201 to be discharged through the second vacuum pump 23 and the exhaust duct 211, preventing cross-contamination of precursor gas and inert gas during substrate movement. The precursor gas is sprayed into the reaction chamber 201 via the spray head 22, ensuring smooth thin film deposition.
[0058] For example, the second vacuum pump 23 is selected from either a dry pump or a rotary vane pump.
[0059] For example, the vacuum level inside the reaction chamber 201 is maintained at 10. -2 -10 -1 mbar.
[0060] Specifically, the spray head 22 has an air inlet 221, a spray chamber 222, and multiple spray holes 223. The air inlet 221 is connected to the spray chamber 222, and the spray chamber 222 is connected to the reaction chamber 201 through the spray holes 223. The precursor gas enters the spray chamber 222 through the air inlet 221 and is finally sprayed out through the spray holes 223 and enters the reaction chamber 201.
[0061] Furthermore, a guide plate 224 is provided inside the spray chamber 222. The guide plate 224 is located between the air inlet 221 and multiple spray holes 223. The guide plate 224 is used to disperse and guide the gas introduced through the air inlet 221 to the multiple spray holes 223. By providing the guide plate 224 inside the spray chamber 222, the guide plate 224 can disperse the precursor gas introduced through the air inlet 221 and guide it to the multiple spray holes 223. This allows the precursor gas in the spray chamber 222 to be sprayed more evenly from the multiple spray holes 223, effectively improving the undesirable effect of a larger flow rate in the spray holes 223 in the middle position of the precursor gas and a smaller flow rate in the spray holes 223 at the surrounding edges. This effectively improves the uniformity of the precursor gas spray, enhances the consistency of the atomic layer film thickness on the substrate, and ensures the formation effect of the atomic layer film.
[0062] In this embodiment, the spray chamber 222 is located below the air inlet 221, and the multiple spray holes 223 are located below the spray chamber 222. That is, the air inlet 221, the spray chamber 222, and the multiple spray holes 223 are arranged sequentially from top to bottom.
[0063] Specifically, in this embodiment, the spray head 22 includes an upper shell 2203 and a lower plate 2204. The upper shell 2203 has an air inlet 221, and the lower plate 2204 has multiple spray holes 223. The upper shell 2203 and the lower plate 2204 are fixedly connected and together form a spray chamber 222. Specifically, the upper shell 2203 is generally made of quartz glass, aluminum alloy, or ceramic. The lower plate 2204 is made of metal.
[0064] In this embodiment, the first end of the guide plate 224 facing the air inlet 221 and the inner wall of the spray chamber 222 together form a first flow space 2201, and the second end of the guide plate 224 facing the air inlet 221 and the inner wall of the spray chamber 222 together form a second flow space 2202. A plurality of guide holes 2241 are spaced apart on the guide plate 224, and the plurality of guide holes 2241 together form a third flow space. Specifically, the first end of the guide plate 224 facing the air inlet 221 corresponds to... Figure 4 The area to the left below the central air intake 221, indicated by the arrow pointing to the left below the air intake 221, is the first flow space 2201; the second end of the guide vane 224 facing the side of the air intake 221 corresponds to... Figure 4 The area to the right below the central air inlet 221, indicated by the arrow pointing downwards to the right below the air inlet 221, is the second flow space 2202; while the multiple guide holes 2241 below the air inlet 221 together form the third flow space. Specifically, after the precursor gas enters the spray chamber 222 from the air inlet 221, it is roughly divided into three parts. The first part of the precursor gas reaches the first flow space 2201. Figure 4 The gas exits through the spray hole 223 on the lower left side, and the precursor gas from the second flow space 2202 arrives at the outlet. Figure 4 The gas exits through the spray hole 223 on the lower right side of the middle section. The precursor gas of the third part passes through multiple guide holes 2241 on the guide plate 224, that is, after passing through the third flow space, it exits from... Figure 4 The gas is discharged through the spray hole 223 at the lower center. The above structural configuration can effectively improve the undesirable effect of the high flow rate of the spray hole 223 in the middle of the precursor gas and the low flow rate of the spray hole 223 at the surrounding edges, thus effectively improving the uniformity of the precursor gas ejection.
[0065] Optionally, the shape of the deflector 224 can be set as a straight plate or as an inclined plate with a certain curvature, which can be adapted according to the actual situation.
[0066] In this embodiment, a fixing post 2242 is provided on the guide plate 224, and the fixing post 2242 is fixedly disposed on the inner wall of the reaction chamber 201. Specifically, the fixing post 2242 can reliably fix the guide plate 224 inside the reaction chamber 201.
[0067] Optionally, one end of the fixing post 2242 is welded to the guide plate 224, and the other end of the fixing post 2242 is welded to the inner wall of the reaction chamber 201. This arrangement ensures a reliable and stable connection.
[0068] Optionally, one end of the fixing column 2242 is detachably connected to the guide plate 224 via bolts or other connecting parts, and the other end of the fixing column 2242 is detachably connected to the inner wall of the reaction chamber 201 via bolts or other connecting parts. This arrangement facilitates the replacement of the guide plate 224.
[0069] In this embodiment, the spray orifice 223 includes a first orifice 2231, a buffer chamber 2232, and a second orifice 2233 connected in sequence. The first orifice 2231 connects to the spray chamber 222, and the second orifice 2233 connects to the reaction chamber 201. The inner wall of the buffer chamber 2232 is arc-shaped, and the minimum orifice diameter of the buffer chamber 2232 is larger than the orifice diameters of the first orifice 2231 and the second orifice 2233. Specifically, to avoid a high concentration of the ejected precursor gas, a certain amount of carrier gas, such as nitrogen, is mixed into the precursor gas. Nitrogen accounts for approximately 1%-2% of the total ejected gas in the spray head 22. The carrier gas and the precursor gas enter the spray chamber 222 together from the air inlet 221 and are finally ejected together from the spray orifice 223. The buffer chamber 2232 serves two purposes: firstly, it slows down the gas flow rate, thus buffering the flow; secondly, it allows the mixture of precursor gas and carrier gas to enter the buffer chamber 2232 through the first orifice 2231, where it can be thoroughly mixed before being discharged into the reaction chamber 201 through the second orifice 2233. Furthermore, the arc-shaped inner wall of the buffer chamber 2232 prevents gas turbulence caused by sharp corners, ensuring the reliability and effectiveness of gas mixing.
[0070] Furthermore, the aperture of the first aperture 2231 is larger than that of the second aperture 2233. Specifically, the aperture of the first aperture 2231 is set slightly larger to ensure that the gas in the spray chamber 222 can enter the buffer chamber 2232 more smoothly and reliably, while the aperture of the second aperture 2233 is set slightly smaller to increase the airflow velocity and form a certain outlet pressure, which to some extent facilitates the chemical adsorption of the precursor gas on the substrate.
[0071] For example, the diameter of the first hole 2231 is set to 2 mm, and the diameter of the second hole 2233 is set to 1 mm.
[0072] In this embodiment, the spray nozzles 223 employ a first orifice 2231, a buffer chamber 2232, and a second orifice 2233. This configuration enables graded control of the precursor gas, increasing the contact area and mixing opportunities between gases. As the gas flows through orifices of different diameters and within the buffer chamber, complex streamlines are generated, allowing for more thorough mixing of the precursor gas and carrier gas, which is beneficial for efficient reaction. Furthermore, the matrix-like uniform distribution of multiple spray nozzles 223 ensures more even gas dispersion on the substrate surface, facilitating large-area, uniform thin film deposition. After sufficient diffusion, the gas is uniformly ejected from the second orifice 2233. The uniformity of ejection directly determines the uniformity of chemical adsorption on the substrate. Since atomic layer deposition is a self-limiting growth mechanism, uneven adsorption of the precursor gas on the substrate surface directly leads to inconsistent film thickness during subsequent growth. Therefore, improving the uniformity of gas ejection from the spray nozzles 22 enhances the consistency of film thickness and prevents wavy defects caused by uneven film thickness.
[0073] In this embodiment, the second chamber body 21 has a scavenging hole 212 communicating with the reaction chamber 201. The scavenging hole 212 is used to introduce an inert gas to purge excess precursor gas on the substrate. Specifically, the scavenging hole 212 can be used to introduce an inert gas, such as nitrogen, to purge and clean excess precursor gas on the substrate surface. The inert gas purging forms an air curtain that isolates different types of precursor gases, preventing the two precursor gases from meeting and undergoing a CVD reaction, which could lead to an excessively fast deposition rate and excessively thick film in some areas of the substrate.
[0074] Specifically, in this embodiment, the second chamber body 21 contains at least two spray heads 22, and a scavenging hole 212 is provided between two adjacent spray heads 22. Specifically, the thin film deposition process includes two half-reactions, requiring two precursor gases, denoted as precursor gas A and precursor gas B. Specifically, the first half-reaction involves introducing precursor gas A into the substrate to generate chemical adsorption, followed by scavenging excess precursor A from the substrate surface with an inert gas. The second half-reaction involves introducing precursor gas B to react chemically with precursor gas A to generate a single atomic-layer thin film. Specifically, taking the example of having two spray heads 22, the two spray heads 22 spray precursor gas A and precursor gas B respectively. A scavenging hole 212 is provided between two adjacent spray heads 22. With this arrangement, the inert gas discharged from the scavenging hole 212 can separate precursor gas A and precursor gas B, that is, separate the two half-reactions, to prevent the two precursor gases from meeting and causing a CVD reaction, which would result in an excessively fast deposition rate in some areas of the substrate and an excessively thick film.
[0075] For example, the scavenging port 212 is provided above the reaction chamber 201.
[0076] The diameter of the scavenging port 212 is set to gradually decrease in the direction of approaching the reaction chamber 201.
[0077] Specifically, in this embodiment, the scavenging hole 212 includes a conical hole portion 2121, a first stepped hole portion 2122, and a second stepped hole portion 2123 connected in sequence. The diameter of the conical hole portion 2121 gradually decreases towards the reaction chamber 201, and the diameter of the first stepped hole portion 2122 is larger than the diameter of the second stepped hole portion 2123. Specifically, the air inlet end of the scavenging hole 212 is the conical hole portion 2121, which makes the air inlet diameter larger and the conical surface has a guiding effect to ensure smooth gas entry; the air outlet end is set as a stepped hole structure with progressively decreasing diameters, which can gradually increase the gas flow rate and ejection pressure, and enhance the gas's ability to purge residual gas on the substrate surface.
[0078] In addition, the structure of the aforementioned scavenging hole 212 can reduce the risk of blockage. By changing the hole size and structure, it can prevent larger particles of impurities from directly entering and blocking the scavenging hole 212 to a certain extent, ensuring the smooth flow of the scavenging hole 212 and maintaining the stable operation of the equipment.
[0079] For example, the maximum diameter of the tapered hole 2121 is 4 mm and the minimum diameter is 2 mm. The diameter of the first stepped hole 2122 is 2 mm and the diameter of the second stepped hole 2123 is 1 mm.
[0080] For example, vacuum pump 3 is selected from either a dry pump or a rotary vane pump.
[0081] In this embodiment, the cooling chamber 3 includes a third chamber body 31, a cooling element 32, and a third vacuum pump 33. The cooling chamber 301 is formed within the third chamber body 31, the cooling element 32 is disposed within the cooling chamber 301, and the third vacuum pump 33 is used to evacuate the cooling chamber 301. Specifically, the second chamber body 21 and the third chamber body 31 can share a wall, and the second valve 72 is disposed on this wall. The third vacuum pump 33 provides a vacuum environment for the cooling chamber 301, and the cooling element 32 can reliably cool the substrate located within the cooling chamber 301, allowing the substrate to cool rapidly to room temperature and ensuring smooth thin film deposition.
[0082] For example, the third vacuum pump 33 is selected from either a dry pump or a rotary vane pump.
[0083] For example, the vacuum level inside the cooling chamber 301 is maintained at 10. -2 -10 -1 mbar.
[0084] In this embodiment, the cooling element 32 is disposed at the top of the cooling chamber 301, and the cooling element 32 is configured as a cooling air vent. Specifically, multiple cooling air vents are provided. The cooling air vents are made of stainless steel or aluminum alloy. Nitrogen gas is used for cooling, and it is blown vertically onto the substrate surface through the air outlet to achieve a cooling effect. Specifically, Figure 8 A schematic diagram of the air outlet 321 of the cooling fan grille is shown. The diameter of the air outlet 321 is 0.5-2mm, and the spacing between the outlets is 5-10mm. The cooling gas flow rate can be controlled by a gas flow meter, and the gas flow rate is adjustable from 0-500sccm, and the gas is evenly sprayed out from each air outlet 321.
[0085] This embodiment is not limited to this; the cooling component 32 can also be configured as a cooling fan or other components.
[0086] In this embodiment, the atomic layer deposition apparatus further includes an upper stage 5 and a lower stage 6. The upper stage 5 is used to place the substrate to be preheated, and a third valve 73 is provided between the preheating chamber 101 and the upper stage 5. The lower stage 6 is used to place the substrate after cooling, and a fourth valve 74 is provided between the cooling chamber 301 and the lower stage 6. Specifically, the conveying device 4 is used to sequentially convey the substrate between the upper stage 5, the preheating chamber 101, the reaction chamber 201, the cooling chamber 301, and the lower stage 6. The substrate to be preheated is first placed on the upper stage 5, and then the substrate to be preheated is loaded onto the conveying device 4. Then, the third valve 73 is opened, and the conveying device 4 conveys the substrate to the preheating chamber 101 for preheating. After the substrate has cooled, the fourth valve 74 is opened, and the conveying device 4 conveys the substrate to the lower stage 6. The cooled substrate is then removed from the conveying device 4 and placed on the lower stage 6. It is worth mentioning that the third valve 73 is closed during the preheating process, and the fourth valve 74 is closed during the cooling process.
[0087] Specifically, the first valve 71 is set to correspond with the third valve 73, and the second valve 72 is set to correspond with the fourth valve 74.
[0088] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. An atomic layer deposition apparatus, characterized in that, include: The preheating chamber (1) has a preheating cavity (101) for heating the substrate; The process chamber (2) has a reaction chamber (201) for depositing an atomic layer thin film on the heated substrate, and a first gate valve (71) is provided between the reaction chamber (201) and the preheating chamber (101); The cooling chamber (3) has a cooling chamber (301) for cooling the substrate after the atomic layer film has been deposited, and a second gate valve (72) is provided between the cooling chamber (301) and the reaction chamber (201); A conveying device (4) is used to sequentially convey the substrate between the preheating chamber (101), the reaction chamber (201) and the cooling chamber (301), and the conveying device (4) is provided with a first heating element (43) for heating the substrate.
2. The atomic layer deposition apparatus according to claim 1, characterized in that, The preheating chamber (1) includes a first chamber body (11), a second heating element (12) and a first vacuum pump (13). The preheating chamber (101) is opened in the first chamber body (11), the second heating element (12) is disposed in the preheating chamber (101), and the first vacuum pump (13) is used to evacuate the preheating chamber (101).
3. The atomic layer deposition apparatus according to claim 2, characterized in that, The second heating element (12) is located at the top of the preheating chamber (101), and the second heating element (12) is configured as a heating wire.
4. The atomic layer deposition apparatus according to claim 1, characterized in that, The conveying device (4) includes a moving part (41) and a carrier plate (42). The carrier plate (42) is disposed on the moving part (41). The first heating element (43) is disposed on the carrier plate (42). The substrate is loaded on the first heating element (43) and in contact with the first heating element (43). The moving part (41) is used to drive the carrier plate (42) to move so as to move the substrate sequentially to the preheating chamber (101), the reaction chamber (201) and the cooling chamber (301).
5. The atomic layer deposition apparatus according to claim 4, characterized in that, The moving part (41) is configured to be rotatably connected to a plurality of drive wheels on the carrier plate (42).
6. The atomic layer deposition apparatus according to claim 1, characterized in that, The process chamber (2) includes a second chamber body (21), a spray head (22), and a second vacuum pump (23). The reaction chamber (201) is located inside the second chamber body (21). The second chamber body (21) has an exhaust duct (211) that connects to the reaction chamber (201). The spray head (22) is located inside the reaction chamber (201) and is used to spray precursor gas into the reaction chamber (201). The second vacuum pump (23) is used to evacuate the reaction chamber (201).
7. The atomic layer deposition apparatus according to claim 6, characterized in that, The second chamber body (21) has a scavenging hole (212) connected to the reaction chamber (201). The scavenging hole (212) is used to introduce inert gas to purge excess precursor gas on the substrate.
8. The atomic layer deposition apparatus according to claim 1, characterized in that, The cooling chamber (3) includes a third chamber body (31), a cooling component (32) and a third vacuum pump (33). The cooling chamber (301) is opened in the third chamber body (31), the cooling component (32) is disposed in the cooling chamber (301), and the third vacuum pump (33) is used to evacuate the cooling chamber (301).
9. The atomic layer deposition apparatus according to claim 8, characterized in that, The cooling component (32) is located at the top of the cooling cavity (301), and the cooling component (32) is configured as a cooling air vent.
10. The atomic layer deposition apparatus according to claim 1, characterized in that, Also includes: A loading stage (5) is used to place the substrate to be preheated, and a third valve (73) is provided between the preheating chamber (101) and the loading stage (5); The substrate lowering stage (6) is used to place the cooled substrate, and a fourth valve (74) is provided between the cooling chamber (301) and the substrate lowering stage (6).