Ion implanter and semiconductor processing system

Abstract

The utility model provides an ion implanter and a semiconductor processing system, and relates to the technical field of ion implanters. The ion implanter comprises a cavity, an exhaust pipeline, a one-way valve, an isolating valve and a tail gas treatment device, the cavity is communicated with the tail gas treatment device through the exhaust pipeline, and the one-way valve and the isolating valve are installed on the exhaust pipeline; wherein when the ion implanter is in an exhaust state, the isolation valve is conducted; when the suction force of the tail gas treatment device is greater than or equal to a threshold value, the one-way valve is switched on; when the suction force of the tail gas treatment device is smaller than a threshold value, the one-way valve is switched off; and when the ion implanter is in a non-exhaust state, the isolating valve is switched off. The ion implanter and the semiconductor processing system provided by the utility model have the advantage of being capable of effectively preventing waste gas from flowing back into the cavity.

Description

Technical Field

[0001] This application relates to the field of ion implanter technology, and more specifically, to an ion implanter and a semiconductor processing system. Background Technology

[0002] Ion implanters are a type of high-voltage miniature accelerator with the widest range of applications. They obtain the desired ions from an ion source, accelerate them to produce an ion beam with energy of several hundred kiloelectron volts, and use them for ion implantation of semiconductor materials, large-scale integrated circuits and devices, as well as for surface modification and film formation of metallic materials.

[0003] After the ion implanter is used, nitrogen gas is injected into the ion source chamber to bring it to atmospheric pressure. Simultaneously, the exhaust valve automatically opens to release excess gas, which is then treated in the exhaust gas purification device. The ion source chamber undergoes multiple extractions and nitrogen injections to desalinate and discharge the waste gas.

[0004] When exhausting waste gas from the ion source chamber, a dry pump or molecular pump is used to extract the waste gas. However, when the dry pump or molecular pump malfunctions, the isolation valve, which only has two states (open and closed), may not close or may have a delay even if it does, failing to achieve passive isolation. This allows impurities in the exhaust pipe to flow back into the ion source chamber, contaminating the chamber and causing problems such as short circuits, arcing, and decreased vacuum pressure in the internal power devices.

[0005] In summary, existing technologies have the problem that waste gas may flow back into the ion source cavity. Utility Model Content

[0006] The purpose of this application is to provide an ion implanter and a semiconductor processing system to solve the problem that waste gas may flow back into the ion source cavity in the prior art.

[0007] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows:

[0008] On one hand, embodiments of this application provide an ion implanter, which includes a cavity, an exhaust pipe, a one-way valve, an isolation valve, and an exhaust gas treatment device. The cavity is connected to the exhaust gas treatment device through the exhaust pipe, and the one-way valve and the isolation valve are installed on the exhaust pipe; wherein,

[0009] When the ion implanter is in the exhaust state, the isolation valve is turned on; and when the suction force of the exhaust gas treatment device is greater than or equal to the threshold, the one-way valve is turned on; when the suction force of the exhaust gas treatment device is less than the threshold, the one-way valve is turned off.

[0010] The isolation valve is closed when the ion implanter is in a non-venting state.

[0011] Optionally, the one-way valve includes a housing, a valve core, an adjusting spring, and a base. The valve core, the adjusting spring, and the base are all located inside the housing. An air port is provided inside the housing. The valve core is located at the air port. One end of the adjusting spring is connected to the valve core, and the other end of the adjusting spring is connected to the base.

[0012] When the suction force of the exhaust gas treatment device is greater than or equal to the force of the regulating spring, the valve core moves away from the air port to form an air gap between the valve core and the air port.

[0013] When the suction force of the exhaust gas treatment device is less than the force of the adjusting spring, the valve core cover is positioned at the gas inlet.

[0014] Optionally, the one-way valve further includes a limiting rod connected to the valve core, and the limiting rod passes through the adjusting spring so that the adjusting spring is arranged around the limiting rod.

[0015] Optionally, the base is provided with a buffer part, the position of which corresponds to the limiting rod;

[0016] When the suction force of the exhaust gas treatment device is greater than or equal to the force of the adjusting spring, the valve core moves away from the gas port, and the limiting rod abuts against the buffer part.

[0017] Optionally, the housing includes an air inlet chamber and an air outlet chamber, the air inlet chamber being connected to the cavity body, and the air outlet chamber being connected to the exhaust gas treatment device through the exhaust pipe; the air inlet is located at the connection between the air inlet chamber and the air outlet chamber, and the diameter of the air inlet chamber is smaller than the diameter of the air outlet chamber.

[0018] Optionally, the diameter of the air port gradually increases in the direction from the air inlet chamber to the air outlet chamber, and the size of the valve core matches the size of the air port.

[0019] Optionally, one end of the one-way valve is connected to the cavity, the other end of the one-way valve is connected to one end of the isolation valve, and the other end of the isolation valve is connected to the exhaust gas treatment device through the exhaust pipe.

[0020] Optionally, the one-way valve is located near the cavity.

[0021] Optionally, the cavity is further provided with an air inlet, and the cavity is connected to an air intake device through the air inlet.

[0022] On the other hand, embodiments of this application also provide a semiconductor processing system, which includes the ion implanter described above.

[0023] Compared with the prior art, this application has the following advantages:

[0024] This application provides an ion implanter and a semiconductor processing system. The ion implanter includes a cavity, an exhaust pipe, a one-way valve, an isolation valve, and a tail gas treatment device. The cavity is connected to the tail gas treatment device through the exhaust pipe. The one-way valve and the isolation valve are installed on the exhaust pipe. When the ion implanter is in the exhaust state, the isolation valve is open. When the suction force of the tail gas treatment device is greater than or equal to a threshold, the one-way valve is open. When the suction force of the tail gas treatment device is less than the threshold, the one-way valve is closed. When the ion implanter is not in the exhaust state, the isolation valve is closed. Because the ion implanter provided in this application is equipped with a one-way valve, when the dry pump or molecular pump malfunctions, its suction force will be less than the threshold, causing the one-way valve to close quickly, effectively preventing waste gas from flowing back into the cavity.

[0025] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the implantation ion machine provided in an embodiment of this application.

[0028] Figure 2 This is a schematic diagram of the one-way valve provided in an embodiment of this application.

[0029] In the picture:

[0030] 110-Cavity; 120-One-way valve; 121-Outer shell; 1211-Inlet chamber; 1212-Outlet chamber; 1213-Air port; 122-Valve core; 1221-Main body; 1222-Sealing ring; 123-Adjusting spring; 124-Base; 125-Limit rod; 130-Isolation valve; 140-Exhaust pipe; 150-Exhaust gas treatment device. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0033] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0034] It should be noted that in this paper, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0035] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0036] As described in the background section, in current traditional ion implanters, only an isolation valve is installed on the exhaust pipe. When exhaust gas needs to be discharged, the isolation valve needs to be opened, and the dry pump or molecular pump in the exhaust gas treatment device needs to be controlled to draw gas, thereby discharging the exhaust gas. Then, the drawing stops, nitrogen is introduced into the ion source chamber, and the drawing continues, thereby desalinizing and discharging the exhaust gas at the end of the ion source chamber.

[0037] However, in actual use, dry pumps or molecular pumps may malfunction, such as stopping or a sudden decrease in pumping force. In such cases, if the isolation valve does not close or even if it does close, there will be a delay. In this case, the exhaust gas in the exhaust pipe or tail gas treatment device will flow back into the ion source cavity, causing impurities to enter the cavity. This may further lead to problems such as short circuits, arcing, and decreased vacuum pressure in the power devices inside the cavity. At the same time, too many impurities brought into the cavity can cause damage or breakage of the rotating fan blades of the molecular pump.

[0038] In view of this, in order to prevent exhaust gas from flowing back into the cavity, this application provides an ion implanter that effectively avoids exhaust gas backflow by adding a one-way valve.

[0039] The ion implanter provided in this application is described below by way of example:

[0040] As an optional implementation, please refer to Figure 1 The ion implanter includes a cavity 110, an exhaust pipe 140, a one-way valve 120, an isolation valve 130, and an exhaust gas treatment device 150. The cavity 110 is connected to the exhaust gas treatment device 150 through the exhaust pipe 140. The one-way valve 120 and the isolation valve 130 are installed on the exhaust pipe 140. When the ion implanter is in the exhaust state, the isolation valve 130 is open. When the suction force of the exhaust gas treatment device 150 is greater than or equal to a threshold, the one-way valve 120 is open. When the suction force of the exhaust gas treatment device 150 is less than the threshold, the one-way valve 120 is closed. When the ion implanter is in the non-exhaust state, the isolation valve 130 is closed.

[0041] Understandably, on the one hand, because a check valve 120 is provided in this application, dual shut-off of the passage can be achieved (shutdown is achieved simultaneously through the check valve 120 and the isolation valve 130), making the entire passage more effectively shut off when not in the exhaust state. On the other hand, with the addition of the check valve 120, when exhaust gas recirculates and the isolation valve 130 cannot close in time, the valve core 122 automatically rebounds under the push of the airflow to block the pipeline, avoiding damage caused by airflow back pressure. Furthermore, the structure of adding the check valve 120 is relatively simple, and the cost of use and maintenance is low.

[0042] It should be noted that the ion implanter has an air inlet and an air outlet on its chamber 110. The chamber 110 is connected to the air intake device through the air inlet and to the exhaust pipe 140 through the air outlet, which in turn connects to the exhaust gas treatment device 150. During the removal of waste gas from the chamber 110, nitrogen is first introduced into the chamber 110 through the air inlet. Then, the air inlet is closed, and the air pump in the exhaust gas treatment device 150 draws out the mixture of nitrogen and waste gas from the chamber 110. Next, nitrogen is introduced into the air inlet again, and the mixture of nitrogen and waste gas is drawn out again, thus achieving the effect of desalinating and discharging the waste gas from the chamber 110.

[0043] Furthermore, in practical applications, one end of the one-way valve 120 is connected to the cavity 110, and the other end of the one-way valve 120 is connected to one end of the isolation valve 130. The other end of the isolation valve 130 is connected to the exhaust gas treatment device 150 through the exhaust pipe 140. Based on this, the one-way valve 120 is positioned close to the cavity 110. For example, the one-way valve 120 is directly connected to the outlet of the cavity 110. In the specific connection, the end of the one-way valve 120 is threaded, and the outlet of the cavity 110 is also threaded, allowing for direct threaded connection between the two, meeting airtightness requirements and simplifying installation.

[0044] In another implementation, the one-way valve 120 can also be installed after the isolation valve 130, that is, one end of the isolation valve 130 is connected to the cavity 110, the other end of the isolation valve 130 is connected to one end of the one-way valve 120, and the other end of the one-way valve 120 is connected to the exhaust gas treatment device 150.

[0045] As an optional implementation, please refer to Figure 2 The one-way valve 120 includes a housing 121, a valve core 122, an adjusting spring 123, and a base 124. The valve core 122, the adjusting spring 123, and the base 124 are all located inside the housing 121. An air port 1213 is provided inside the housing 121. The valve core 122 is located at the air port 1213, and one end of the adjusting spring 123 is connected to the valve core 122, while the other end of the adjusting spring 123 is connected to the base 124. When the suction force of the exhaust gas treatment device 150 is greater than or equal to the force of the adjusting spring 123, the valve core 122 moves away from the air port 1213 to form an air gap between the valve core 122 and the air port 1213. When the suction force of the exhaust gas treatment device 150 is less than the force of the adjusting spring 123, the valve core 122 covers the air port 1213.

[0046] The threshold value mentioned in this application is the force threshold value of the adjusting spring 123, and the force threshold value of the adjusting spring 123 is determined by the spring force. Furthermore, the valve core 122 includes a main body 1221 and a sealing ring 1222 sleeved on the main body 1221. When the valve core 122 is positioned over the air port 1213, a seal is achieved through the sealing ring 1222.

[0047] Furthermore, the one-way valve 120 also includes a limiting rod 125, which is connected to the valve core 122 and passes through the adjusting spring 123, so that the adjusting spring 123 is arranged around the limiting rod 125. By setting the limiting rod 125, the range of motion of the adjusting spring 123 can be limited, thereby preventing the adjusting spring 123 from deviating during movement.

[0048] Meanwhile, in this application, the other end of the limiting rod 125 is suspended, and the base 124 is provided with a venting gap. In order to prevent the valve core 122 from moving too far under the action of suction, the base 124 is provided so that when the valve core 122 moves, the limiting rod 125 and the base 124 abut against each other to limit the range of movement of the valve core 122.

[0049] It should be noted that when the valve core 122 moves, the actual limiting rod 125 will impact the base 124. During prolonged operation of the one-way valve 120, the base 124 is prone to damage because the limiting rod 125 impacts the same position on the base 124. Therefore, the base 124 provided in this application is equipped with a buffer section, the position of which corresponds to the limiting rod 125. Consequently, when the suction force of the exhaust gas treatment device 150 is greater than or equal to the force of the adjusting spring 123, the valve core 122 moves away from the air port 1213, and the limiting rod 125 abuts against the buffer section.

[0050] By incorporating a buffer section, the impact force between the limiting rod 125 and the base 124 is reduced, thereby effectively protecting the base 124 and extending the service life of the one-way valve 120. As one implementation, the buffer section can be made of plastic. Furthermore, the base 124 has a blind hole at the point of impact with the limiting rod 125, and the buffer section is disposed within this blind hole, ensuring that the limiting rod 125 directly contacts the buffer section upon each impact, reducing the impact force borne by the base 124.

[0051] In one implementation, the outer casing 121 includes an intake chamber 1211 and an exhaust chamber 1212. The intake chamber 1211 is connected to the cavity 110, and the exhaust chamber 1212 is connected to the exhaust gas treatment device 150 through an exhaust pipe 140. An air port 1213 is located at the connection between the intake chamber 1211 and the exhaust chamber 1212, and the diameter of the intake chamber 1211 is smaller than the diameter of the exhaust chamber 1212. By setting the diameter of the intake chamber 1211 to be smaller than the diameter of the exhaust chamber 1212, a significant diameter difference exists at the connection between the intake chamber 1211 and the exhaust chamber 1212. This allows the diameter of the valve core 122 to be larger than the diameter of the intake chamber 1211, thereby ensuring that the valve core 122 can stably cover the position of the air port 1213, improving the overall sealing performance of the one-way valve 120.

[0052] Furthermore, in actual use, after an air gap is formed between the valve core 122 and the air port 1213, if the pumping force of the air pump is less than the force of the adjusting spring 123, the valve core 122 will return to the position of the air port 1213 under the action of the adjusting spring 123. At this time, the valve core 122 will have a large impact on the position of the air port 1213, that is, the valve core 122 will have a large impact on the connection between the air inlet chamber 1211 and the air outlet chamber 1212. Under long-term use, the one-way valve 120 is prone to failure.

[0053] Therefore, in this application, the diameter of the air port 1213 gradually increases in the direction from the air inlet chamber 1211 to the air outlet chamber 1212, and the size of the valve core 122 matches the size of the air port 1213. For example, the cross-section of the air port 1213 is arc-shaped. This arrangement allows the valve core 122 to have a larger contact area when it impacts the air port 1213, resulting in more dispersed force distribution at the air port 1213, making it less prone to failure and extending the service life of the one-way valve 120. In one implementation, the main body 1221 of the valve core 122 is set as an inclined surface, and the sealing ring 1222 in the valve core 122 is also fitted onto the entire inclined surface, further improving the sealing performance.

[0054] Therefore, the exhaust gas discharge principle of the ion implanter provided in this application is as follows:

[0055] When exhaust gas needs to be discharged, the ion implanter is in the exhaust state. At this time, the isolation valve 130 is open. When the air pump of the exhaust gas treatment device 150 starts to pump air, if the pumping force is greater than the force of the spring, the valve core 122 of the one-way valve 120 moves upward to form an air gap, and the exhaust gas can be discharged normally.

[0056] When the air pump malfunctions and causes gas backflow, the spring will quickly rebound and hold the valve core 122 against the air port 1213, thereby achieving a seal and preventing exhaust gas from entering the cavity 110.

[0057] When there is no need to exhaust gas, the isolation valve 130 is closed, and the one-way valve 120 is also closed, achieving double sealing and better sealing effect.

[0058] Based on the above implementation, this application also provides a semiconductor processing system, which includes the ion implanter described above.

[0059] In summary, this application provides an ion implanter and a semiconductor processing system. The ion implanter includes a cavity, an exhaust pipe, a one-way valve, an isolation valve, and a tail gas treatment device. The cavity is connected to the tail gas treatment device through the exhaust pipe, and the one-way valve and the isolation valve are installed on the exhaust pipe. When the ion implanter is in the exhaust state, the isolation valve is open; when the suction force of the tail gas treatment device is greater than or equal to a threshold, the one-way valve is open; when the suction force of the tail gas treatment device is less than the threshold, the one-way valve is closed; when the ion implanter is in the non-exhaust state, the isolation valve is closed. Because the ion implanter provided in this application is equipped with a one-way valve, when the dry pump or molecular pump malfunctions, its suction force will be less than the threshold, causing the one-way valve to close quickly, effectively preventing waste gas from flowing back into the cavity.

[0060] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0061] It will be apparent to those skilled in the art that this application is not limited to the details of the exemplary embodiments described above, and that this application can be implemented in other specific forms without departing from the spirit or essential characteristics of this application. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this application is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this application. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. An ion implanter, characterized in that, The ion implanter includes a cavity, an exhaust pipe, a one-way valve, an isolation valve, and an exhaust gas treatment device. The cavity is connected to the exhaust gas treatment device via the exhaust pipe, and the one-way valve and the isolation valve are installed on the exhaust pipe. When the ion implanter is in the exhaust state, the isolation valve is turned on; and when the suction force of the exhaust gas treatment device is greater than or equal to the threshold, the one-way valve is turned on; when the suction force of the exhaust gas treatment device is less than the threshold, the one-way valve is turned off. The isolation valve is closed when the ion implanter is in a non-venting state.

2. The ion implanter as described in claim 1, characterized in that, The one-way valve includes a housing, a valve core, an adjusting spring, and a base. The valve core, the adjusting spring, and the base are all located inside the housing. An air port is provided inside the housing. The valve core is located at the air port. One end of the adjusting spring is connected to the valve core, and the other end of the adjusting spring is connected to the base. When the suction force of the exhaust gas treatment device is greater than or equal to the force of the regulating spring, the valve core moves away from the air port to form an air gap between the valve core and the air port. When the suction force of the exhaust gas treatment device is less than the force of the adjusting spring, the valve core cover is positioned at the gas inlet.

3. The ion implanter as described in claim 2, characterized in that, The one-way valve also includes a limiting rod, which is connected to the valve core and passes through the adjusting spring so that the adjusting spring is arranged around the limiting rod.

4. The ion implanter as described in claim 3, characterized in that, The base is provided with a buffer part, and the position of the buffer part corresponds to the limiting rod. When the suction force of the exhaust gas treatment device is greater than or equal to the force of the adjusting spring, the valve core moves away from the gas port, and the limiting rod abuts against the buffer part.

5. The ion implanter as described in claim 2, characterized in that, The outer casing includes an air inlet chamber and an air outlet chamber. The air inlet chamber is connected to the cavity body, and the air outlet chamber is connected to the exhaust gas treatment device through the exhaust pipe. The air inlet is located at the connection between the air inlet chamber and the air outlet chamber, and the diameter of the air inlet chamber is smaller than the diameter of the air outlet chamber.

6. The ion implanter as described in claim 5, characterized in that, In the direction from the air inlet to the air outlet, the diameter of the air port gradually increases, and the size of the valve core matches the size of the air port.

7. The ion implanter as described in claim 1, characterized in that, One end of the one-way valve is connected to the cavity, and the other end of the one-way valve is connected to one end of the isolation valve. The other end of the isolation valve is connected to the exhaust gas treatment device through the exhaust pipe.

8. The ion implanter as described in claim 1, characterized in that, The one-way valve is located near the cavity.

9. The ion implanter as described in claim 1, characterized in that, The cavity is also provided with an air inlet, and the cavity is connected to the air intake device through the air inlet.

10. A semiconductor processing system, characterized in that, The semiconductor processing system includes an ion implanter as described in any one of claims 1 to 9.

Images