Light-emitting device structure capable of being controlled by regions

Abstract

The utility model relates to a light-emitting device structure capable of being controlled in different areas, which at least comprises two independent areas, one independent area at least comprises two light-emitting units, and an isolation groove is arranged between the light-emitting units. No isolation groove exists between the light-emitting units in the other independent area; the two areas are connected through electrodes to achieve independent light emitting or simultaneous light emitting. The first electrode is internally connected with a second electrode, the second electrode is externally connected with a third electrode, and the third electrode is internally connected with a fourth electrode, so that the light-emitting units in the marginal area emit light simultaneously; the fifth electrode is internally connected with a sixth electrode to realize luminescence in the middle area; when the electrodes of the edge area and the middle area are connected at the same time, simultaneous light emitting is achieved, and the isolation grooves do not emit light. According to the utility model, independent light emitting in different areas can be realized, light emitting can also be realized simultaneously, the controllability of the device is increased, and the application of the device is wider.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor light-emitting diode technology, and in particular to a light-emitting device structure that can be controlled by different regions. Background Technology

[0002] Existing high-voltage LEDs emit light as a whole; that is, when the output power is guaranteed and a given current is applied, all the series-connected light-emitting units emit light simultaneously, making it impossible to achieve regionally adjustable light emission. This invention designs a light-emitting device structure that allows for regionally controlled light emission, enabling different regions to emit light independently or simultaneously, increasing the device's controllability and broadening its applications. Utility Model Content

[0003] Based on the technical problems existing in the background technology, this utility model proposes a light-emitting device structure that can be controlled in different areas, enabling simultaneous short-distance and long-distance lighting, thereby expanding the lighting range and field of view.

[0004] The present invention proposes a light-emitting device structure that can be controlled by different regions, comprising at least two separate regions, wherein one separate region comprises at least two light-emitting units with an isolation groove between the light-emitting units; and the other separate region has no isolation groove between the light-emitting units.

[0005] The two regions are connected by electrodes to achieve independent or simultaneous light emission; as detailed below:

[0006] Edge region light emission: The first electrode is connected to the second electrode, the second electrode is connected to the third electrode, and the third electrode is connected to the fourth electrode, so that the edge region light emission unit can emit light simultaneously;

[0007] Light emission in the middle region: The sixth electrode is connected inside the fifth electrode to achieve light emission in the middle region;

[0008] When the electrodes in the edge region and the middle region are connected at the same time, they can emit light simultaneously. The isolation groove does not emit light, and the horizontal blank area does not emit light due to internal wiring issues.

[0009] Preferably, one of the individual regions includes light-emitting unit A and light-emitting unit B, and there is an isolation groove between the light-emitting units;

[0010] Each light-emitting unit also includes a first conductive layer that forms an ohmic contact with the first semiconductor layer, a reflective layer that forms an electrical connection with the first conductive layer, and a second conductive layer that forms an electrical connection with the reflective layer.

[0011] Each light-emitting unit also includes a recess that penetrates the first semiconductor layer and the active layer and extends into the interior of the second semiconductor layer, as well as a third conductive layer that forms an electrical connection with the second semiconductor layer through the recess.

[0012] The third conductive layer of light-emitting unit A is electrically connected to the second conductive layer of light-emitting unit B, thus connecting the light-emitting units in series.

[0013] A first insulating layer exists between the surfaces of the first conductive layer and the reflective layer portions;

[0014] A second insulating layer is applied to the surface of the reflective layer, and the area of ​​the reflective layer surface without the first insulating layer is covered by the second insulating layer;

[0015] At the series connection position of the light-emitting units, there is a third insulating layer between the third conductive layer of light-emitting unit A and the surface of part of the second conductive layer of light-emitting unit B;

[0016] A fourth insulating layer that covers the surface of the third conductive layer, is in contact with part of the surface of the third insulating layer, and isolates the light-emitting unit A from the light-emitting unit B;

[0017] The first conductive layer, the reflective layer, the second conductive layer, electrode A, and the third conductive layer together constitute the light-emitting unit A;

[0018] The third conductive layer bridges the light-emitting unit B, which is composed of the third conductive layer, the second conductive layer, the reflective layer, the first conductive layer, and the electrode B.

[0019] The fourth insulating layer is connected to the substrate through a bonding layer to form a high-voltage chip structure, with the substrate serving as the bonding surface for packaging.

[0020] Preferably, another separate area light-emitting unit includes;

[0021] A first conductive layer forms an ohmic contact with the first semiconductor layer; a reflective layer forms an electrical connection with the first conductive layer; a second conductive layer forms an electrical connection with the reflective layer; an electrode A forms an electrical connection with the second conductive layer; the first conductive layer, the reflective layer, the second conductive layer, and the electrode A together constitute the first electrical connection layer;

[0022] A recess that penetrates the first semiconductor layer and the active layer and extends into the interior of the second semiconductor layer, and a third conductive layer that forms an electrical connection with the second semiconductor layer through the recess; the third conductive layer forms an electrical connection with a portion of the second conductive layer; the third conductive layer, the second conductive layer, and electrode B together constitute the second connection layer;

[0023] A first insulating layer exists between the surfaces of the first conductive layer and the reflective layer portions;

[0024] A second insulating layer is applied to the surface of the reflective layer, and the area of ​​the reflective layer surface without the first insulating layer is covered by the second insulating layer;

[0025] A third insulating layer covering the recessed sidewall and one side of the first electrical connection layer;

[0026] A fourth insulating layer that covers the surface of the third conductive layer and is in contact with a portion of the surface of the third insulating layer;

[0027] The fourth insulating layer is connected to the substrate through a bonding layer to form a high-voltage chip structure, with the substrate serving as the bonding surface for packaging.

[0028] Preferably, each light-emitting unit is a light-emitting device composed of a first semiconductor layer, a second semiconductor layer and an active layer; the active layer is located between the first semiconductor layer and the second semiconductor layer.

[0029] Preferably, when the first electrode and the fifth electrode do not share a common positive electrode, the area of ​​the lateral dark region is large; when the first electrode and the fifth electrode share a common positive electrode, the area of ​​the lateral dark region is significantly reduced, decreasing by 3% to 15%.

[0030] Preferably, the reflective layer has a multi-layer structure; the second conductive layer, the third conductive layer, electrode A, electrode B, and bonding layer have a multi-layer metal structure.

[0031] The beneficial effects of this invention are as follows: Through chip structure design, controllable independent light emission of the central and edge regions is achieved. The edge region includes a series of connected light-emitting units, while the central region can be an independent light-emitting unit. Together, the central and edge regions form a novel controllable light-emitting device. This allows for independent or simultaneous light emission from different regions, increasing the device's adjustability and broadening its applications. It also enables simultaneous short-range and long-range lighting, expanding the illumination range and field of view. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of one of the light-emitting regions of a light-emitting device structure that can be controlled in different regions according to this utility model.

[0033] Figure 2 This is a schematic diagram of another light-emitting region structure of a light-emitting device structure that can be controlled by different regions according to this utility model;

[0034] Figure 3 Figure 1 shows the layout of the light-emitting area;

[0035] Figure 4 Figure 2 shows the layout of the light-emitting area;

[0036] Figure 5 Figure 3 shows the layout of the light-emitting area;

[0037] Figure 6 Figure 4 shows the layout of the light-emitting area.

[0038] In the figure: 1. First semiconductor layer, 2. Second semiconductor layer, 3. Active layer, 4. First conductive layer, 5. Reflective layer, 6. Second conductive layer, 7. Third conductive layer, 8. First insulating layer, 9. Second insulating layer, 10. Third insulating layer, 11. Fourth insulating layer, 12. Bonding layer, 13. Substrate, 14. First electrode, 15. Second electrode, 16. Third electrode, 17. Fourth electrode, 18. Fifth electrode, 19. Sixth electrode. Detailed Implementation

[0039] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0040] Reference Figure 1-2 A light-emitting device structure that can be controlled by different regions includes at least two separate regions. Each light-emitting unit is a light-emitting device composed of a first semiconductor layer 1, a second semiconductor layer 2 and an active layer 3. The active layer 3 is located between the first semiconductor layer 1 and the second semiconductor layer 2.

[0041] One separate region includes at least two light-emitting units with an isolation groove between them; the other separate region has no isolation groove between the light-emitting units.

[0042] The two regions are connected by electrodes to achieve independent or simultaneous light emission; as detailed below:

[0043] Edge region light emission: The first electrode 14 is connected to the second electrode 15, the second electrode 15 is connected to the third electrode 16, and the third electrode 16 is connected to the fourth electrode 17, so that the edge region light emission unit can emit light simultaneously.

[0044] Light emission in the middle region: The sixth electrode 19 is connected inside the fifth electrode 18 to achieve light emission in the middle region;

[0045] When the electrodes in the edge and middle regions are connected simultaneously, simultaneous light emission is achieved. The isolation groove does not emit light, and the horizontal blank area does not emit light due to internal wiring issues. When the first and fifth electrodes do not share a common positive electrode, the horizontally dark area is large (see reference). Figure 3 and Figure 5 When the first and fifth electrodes share the same positive electrode, the area of ​​the lateral dark region is significantly reduced (refer to...). Figure 4 and Figure 6 The area of ​​the dark zone decreased by 3% to 15%.

[0046] One of the individual areas includes light-emitting unit A and light-emitting unit B, with an isolation groove between the light-emitting units;

[0047] Each light-emitting unit also includes a first conductive layer 4 that forms an ohmic contact with the first semiconductor layer 1, a reflective layer 5 that forms an electrical connection with the first conductive layer 4, and a second conductive layer 6 that forms an electrical connection with the reflective layer 5.

[0048] Each light-emitting unit also includes a recess that penetrates the first semiconductor layer 1 and the active layer 3 and extends into the interior of the second semiconductor layer 2, as well as a third conductive layer 7 that forms an electrical connection with the second semiconductor layer 2 through the recess.

[0049] The third conductive layer 7 of the light-emitting unit A is electrically connected to the second conductive layer 6 of the light-emitting unit B, thus connecting the light-emitting units in series.

[0050] A first insulating layer 8 exists between the surfaces of the first conductive layer 4 and the reflective layer 5.

[0051] A second insulating layer 9 is applied to the surface of the reflective layer 5, and the area on the surface of the reflective layer 5 without the first insulating layer 8 is covered by the second insulating layer 9;

[0052] At the series connection position of the light-emitting units, there is a third insulating layer 10 between the third conductive layer 7 of the light-emitting unit A and part of the surface of the second conductive layer 6 of the light-emitting unit B;

[0053] A fourth insulating layer 11, covering the surface of the third conductive layer 7 and in contact with part of the surface of the third insulating layer 10, isolates the light-emitting unit A and the light-emitting unit B.

[0054] The first conductive layer 4, the reflective layer 5, the second conductive layer 6, the electrode A, and the third conductive layer 7 together form the light-emitting unit A;

[0055] The third conductive layer bridges the light-emitting unit B, which is composed of the third conductive layer 7, the second conductive layer 6, the reflective layer 5, the first conductive layer 4, and the electrode B.

[0056] The fourth insulating layer 11 is connected to the substrate 13 through the bonding layer 12 to form a high-voltage chip structure, and the substrate 13 serves as the bonding surface for packaging.

[0057] Another separate area light-emitting unit includes;

[0058] A first conductive layer 4 forms an ohmic contact with the first semiconductor layer 1; a reflective layer 5 forms an electrical connection with the first conductive layer 4; a second conductive layer 6 forms an electrical connection with the reflective layer 5; an electrode A forms an electrical connection with the second conductive layer 6; the first conductive layer 4, the reflective layer 5, the second conductive layer 6, and the electrode A together constitute the first electrical connection layer.

[0059] A recess that penetrates the first semiconductor layer 1 and the active layer 3 and extends into the interior of the second semiconductor layer 2, and a third conductive layer 7 that forms an electrical connection with the second semiconductor layer 2 through the recess; the third conductive layer 7 forms an electrical connection with a portion of the second conductive layer 6; the third conductive layer 7, the second conductive layer 6, and the electrode B together constitute the second electrical connection layer;

[0060] A first insulating layer 8 exists between the surfaces of the first conductive layer 4 and the reflective layer 5.

[0061] A second insulating layer 9 is applied to the surface of the reflective layer 5, and the area on the surface of the reflective layer 5 without the first insulating layer 8 is covered by the second insulating layer 9;

[0062] A third insulating layer 10 covering the recessed sidewall and one side of the first electrical connection layer;

[0063] A fourth insulating layer 11 covers the surface of the third conductive layer 10 and is in contact with a portion of the surface of the third insulating layer 10;

[0064] The fourth insulating layer 11 is connected to the substrate 13 through the bonding layer 12 to form a high-voltage chip structure, and the substrate 13 serves as the bonding surface for packaging.

[0065] In this utility model, Figures 3-6 Several embodiments are listed, in which the graphic of the middle area can be a circle, a square or other regular shape. Only one embodiment is listed. Similarly, the graphic of the edge area can also be other regular shapes. Only one embodiment is listed.

[0066] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A light-emitting device structure controllable by different regions, comprising at least two separate regions, characterized in that, One separate region includes at least two light-emitting units with an isolation groove between them; the other separate region has no isolation groove between the light-emitting units. The two regions are connected by electrodes to achieve independent or simultaneous light emission; as detailed below: Edge region light emission: The first electrode (14) is connected to the second electrode (15), the second electrode (15) is connected to the third electrode (16), and the third electrode (16) is connected to the fourth electrode (17), so that the edge region light emission unit can emit light simultaneously; Light emission in the middle region: The sixth electrode (19) is connected inside the fifth electrode (18) to achieve light emission in the middle region; When the electrodes in the edge region and the middle region are connected at the same time, they can emit light simultaneously. The isolation groove does not emit light, and the horizontal blank area does not emit light due to internal wiring issues.

2. The light-emitting device structure with region-controllable capability according to claim 1, characterized in that, One of the individual areas includes light-emitting unit A and light-emitting unit B, with an isolation groove between the light-emitting units; Each light-emitting unit also includes a first conductive layer (4) that forms an ohmic contact with the first semiconductor layer (1), a reflective layer (5) that forms an electrical connection with the first conductive layer (4), and a second conductive layer (6) that forms an electrical connection with the reflective layer (5). Each light-emitting unit also includes a recess that penetrates the first semiconductor layer (1) and the active layer (3) and extends into the interior of the second semiconductor layer (2), and a third conductive layer (7) that forms an electrical connection with the second semiconductor layer (2) through the recess. The third conductive layer (7) of the light-emitting unit A is electrically connected to the second conductive layer (6) of the light-emitting unit B, thus connecting the light-emitting units in series; A first insulating layer (8) exists between the surfaces of the first conductive layer (4) and the reflective layer (5); A second insulating layer (9) is covered on the surface of the reflective layer (5), and the area on the surface of the reflective layer (5) without the first insulating layer (8) is covered by the second insulating layer (9); At the series connection position of the light-emitting units, there is a third insulating layer (10) between the third conductive layer (7) of the light-emitting unit A and a portion of the surface of the second conductive layer (6) of the light-emitting unit B. The fourth insulating layer (11) covers the surface of the third conductive layer (7) and is in contact with part of the surface of the third insulating layer (10), thus isolating the light-emitting unit A from the light-emitting unit B. The first conductive layer (4), the reflective layer (5), the second conductive layer (6), the electrode A, and the third conductive layer (7) together form the light-emitting unit A; The third conductive layer bridges the light-emitting unit B, which is composed of the third conductive layer (7), the second conductive layer (6), the reflective layer (5), the first conductive layer (4), and the electrode B. The fourth insulating layer (11) is connected to the substrate (13) through the bonding layer (12) to form a high voltage chip structure, and the substrate (13) serves as the bonding surface for packaging.

3. The light-emitting device structure with region-controllable capability according to claim 1, characterized in that, Another separate area light-emitting unit includes; A first conductive layer (4) forms an ohmic contact with the first semiconductor layer (1), a reflective layer (5) forms an electrical connection with the first conductive layer (4), and a second conductive layer (6) forms an electrical connection with the reflective layer (5); an electrode A forms an electrical connection with the second conductive layer (6); the first conductive layer (4), the reflective layer (5), the second conductive layer (6), and the electrode A together constitute the first electrical connection layer; A recess that penetrates the first semiconductor layer (1) and the active layer (3) and extends into the interior of the second semiconductor layer (2) and a third conductive layer (7) that forms an electrical connection with the second semiconductor layer (2) through the recess; the third conductive layer (7) forms an electrical connection with a portion of the second conductive layer (6); the third conductive layer (7), the second conductive layer (6), and the electrode B together form the second electrical connection layer; A first insulating layer (8) exists between the surfaces of the first conductive layer (4) and the reflective layer (5); A second insulating layer (9) is covered on the surface of the reflective layer (5), and the area on the surface of the reflective layer (5) without the first insulating layer (8) is covered by the second insulating layer (9); A third insulating layer (10) covering the recessed sidewall and one side of the first electrical connection layer. A fourth insulating layer (11) is covered on the surface of the third conductive layer (7) and is in contact with a portion of the surface of the third insulating layer (10). The fourth insulating layer (11) is connected to the substrate (13) through the bonding layer (12) to form a high voltage chip structure, and the substrate (13) serves as the bonding surface for packaging.

4. The light-emitting device structure with region-controllable capability according to claim 1, characterized in that, The light-emitting units are all light-emitting devices composed of a first semiconductor layer (1), a second semiconductor layer (2) and an active layer (3); the active layer (3) is located between the first semiconductor layer (1) and the second semiconductor layer (2).

5. The light-emitting device structure with region-controllable capability according to claim 1, characterized in that, When the first electrode (14) and the fifth electrode (18) do not share a common positive electrode, the area of ​​the lateral dark region is large; when the first electrode (14) and the fifth electrode (18) share a common positive electrode, the area of ​​the lateral dark region is greatly reduced, and the area of ​​the dark region decreases by 3% to 15%.

6. A light-emitting device structure with region-controllable characteristics according to claim 2 or 3, characterized in that, The reflective layer (5) is a multilayer structure; the second conductive layer (6), the third conductive layer (7), electrode A, electrode B, and bonding layer (12) are multilayer metal structures.

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