Light emitting diode packaging structure

Abstract

A light emitting diode packaging structure comprises: a base layer; the light emitting diode is arranged on the base layer; the shell is arranged on the base layer; the first light-transmitting layer is arranged on the light-emitting diode; the second light-transmitting layer is arranged on the first light-transmitting layer; wherein the first light-transmitting layer is clamped between the light-emitting diode and the second light-transmitting layer; a sealed space is defined by the base layer, the shell and the second light-transmitting layer, and the light-emitting diode is located in the sealed space. Therefore, the surface of the light emitting diode is protected, the brightness is improved, the luminous efficiency is improved, the reliability is maintained, and the service life is prolonged.

Description

Technical Field

[0001] This utility model relates to the field of light-emitting diode technology, and in particular to a light-emitting diode packaging structure. Background Technology

[0002] Visible light emitting diode (LED) chips can be fabricated into LED packages for applications in lighting, displays, decoration, and medical fields. Infrared LED chips can be fabricated into infrared LED packages for applications in remote control, night vision photography, facial recognition, distance sensing, and communication. A typical visible light LED package or infrared LED package includes a substrate, an LED, and an organic colloid. The organic colloid protects the LED chip.

[0003] Ultraviolet (UV) light-emitting diode (LED) chips can be fabricated into UV LED packaging structures for applications such as sterilization, air purification, curing, medical treatment, identification, testing, and semiconductor manufacturing. However, because the UV light emitted by the LED chip can damage organic colloids, UV LED chips cannot be encapsulated using organic colloids. Therefore, a typical UV LED packaging structure includes a substrate, the UV LED, a housing, and quartz glass. This packaging method protects the UV LED chip through quartz glass and air, ensuring that the quartz glass and air are not damaged by UV light.

[0004] However, when a typical ultraviolet light-emitting diode (UVLED) package emits UV light, the UV light is reflected at the interfaces between the UVLED and air, the air and quartz glass, and the quartz glass and external air. This significantly reduces the proportion of UV light emitted from the UVLED package, resulting in poor brightness and luminous efficiency.

[0005] Furthermore, the substrate and quartz glass bonding joints of a typical ultraviolet (UV) light-emitting diode (LED) package structure can be damaged by UV light, resulting in poor reliability and a short lifespan for typical UV LED packages.

[0006] Therefore, improving the brightness and luminous efficiency of LED packaging structures while maintaining their reliability and increasing their lifespan is one of the urgent problems to be solved. Utility Model Content

[0007] This invention provides a light-emitting diode (LED) packaging structure that can protect the LED surface, improve brightness, increase luminous efficiency, maintain reliability, and extend service life.

[0008] This utility model provides a light-emitting diode (LED) packaging structure, including: a base layer; an LED disposed on the base layer; a housing disposed on the base layer; a first light-transmitting layer disposed on the LED; and a second light-transmitting layer disposed on the first light-transmitting layer; wherein the first light-transmitting layer is sandwiched between the LED and the second light-transmitting layer; the base layer, the housing, and the second light-transmitting layer enclose a sealed space, and the LED is located within the sealed space.

[0009] In some embodiments, the refractive index of the first light-transmitting layer is between 0.85 times the refractive index of the second light-transmitting layer and 1.15 times the refractive index of the light-emitting diode.

[0010] In some embodiments, the material of the first light-transmitting layer is an elastic material.

[0011] In some embodiments, the first light-transmitting layer is a non-stick light-transmitting layer.

[0012] In some embodiments, the light-emitting diode package structure further includes an adhesive layer sandwiched between the housing and the second light-transmitting layer.

[0013] In some embodiments, the adhesive layer is a heat-resistant adhesive material.

[0014] In some embodiments, the light-emitting diode package structure further includes: an adhesive layer disposed on the housing; and an inorganic layer sandwiched between the adhesive layer and the second light-transmitting layer.

[0015] In some embodiments, the inorganic layer has substantially zero light transmittance across the light-emitting bands of the LED.

[0016] In some embodiments, the inorganic layer is made of gold, silver, nickel, copper, tin, or lead.

[0017] In some embodiments, the light-emitting diode is an ultraviolet light-emitting diode; the housing material is ceramic, metal, or quartz; and the material of the second light-transmitting layer is quartz, magnesium fluoride, calcium fluoride, glass, or polytetrafluoroethylene.

[0018] As described above, the LED packaging structure of this utility model has a base layer, a shell, and a second light-transmitting layer enclosing a sealed space, which can protect the surface of the LED to facilitate surface-mount technology (SMT) and prevent moisture, dust, and other debris from falling on the LED, causing problems such as cracking, burning, discoloration, scratches, light blocking, and affecting heat dissipation.

[0019] Furthermore, the LED packaging structure of this invention has a first light-transmitting layer, which increases the brightness and luminous efficiency of the LED packaging structure. The refractive index of the first light-transmitting layer can, for example, be between 0.85 times the refractive index of the second light-transmitting layer and 1.15 times the refractive index of the LED, thereby reducing reflection caused by large changes in refractive index and increasing the brightness and luminous efficiency of the LED packaging structure. The first light-transmitting layer can, for example, be a non-stick light-transmitting layer, thereby preventing its structure from being damaged by ultraviolet light. The material of the first light-transmitting layer can, for example, be an elastic material, ensuring that there are no air bubbles between the first light-transmitting layer and the LED, and also no air bubbles between the first and second light-transmitting layers, thereby preventing light reflection caused by air bubbles. The above features of the LED packaging structure of this invention can increase the brightness and luminous efficiency of the LED packaging structure by 3% to 20%.

[0020] In addition, this invention has an adhesive layer and an inorganic layer. The inorganic layer can protect the adhesive layer from damage by ultraviolet light and other rays, thereby increasing the structural stability of the LED packaging structure, maintaining reliability and increasing service life. Attached Figure Description

[0021] Details of one or more embodiments of the subject matter described herein are set forth in the following drawings and description. Other features, aspects, and advantages of the subject matter of this specification will become apparent from the description, drawings, and claims, wherein:

[0022] Figure 1 This is a schematic diagram of a known LED package structure.

[0023] Figure 2 This is a schematic diagram of the light-emitting diode packaging structure according to the first embodiment of the present invention.

[0024] Figure 3 This is a schematic diagram of the manufacturing process of the light-emitting diode packaging structure according to the first embodiment of this utility model.

[0025] Figure 4 This is a spectrum of light transmittance of the second light-transmitting layer in a light-emitting diode (LED) package structure.

[0026] Figure 5 This is a schematic diagram of the light-emitting diode packaging structure according to the second embodiment of the present invention.

[0027] Explanation of symbols in the attached diagram:

[0028] 1: Light-emitting diode (LED) package structure;

[0029] 1A: Light-emitting diode package structure;

[0030] 1B: Light-emitting diode package structure;

[0031] 10: Grassroots level;

[0032] 11: Conductive layer;

[0033] 20: Light-emitting diode;

[0034] 21: Conductive layer;

[0035] 30: Shell;

[0036] 40: First light-transmitting layer;

[0037] 50: Second light-transmitting layer;

[0038] 51: Ultra-high purity quartz;

[0039] 52: High-purity quartz;

[0040] 53: Standard Quartz;

[0041] 54: Optical glass;

[0042] 61: Adhesive layer;

[0043] 62: Inorganic layer;

[0044] 90: Sealed space;

[0045] L1: First refracted light;

[0046] L2: Second refracted light;

[0047] L3: Third refracted light;

[0048] R1: First reflected light;

[0049] R2: Second reflected light;

[0050] R3: Third reflected light;

[0051] U1: Band. Detailed Implementation

[0052] The detailed description and technical content of this utility model are explained below with reference to the accompanying drawings. However, the accompanying drawings are provided for reference and illustration only and are not intended to limit this utility model.

[0053] As used herein, terms such as "first" and "second" describe various components, parts, regions, layers, and / or portions, which should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or portion from another. Unless the context clearly indicates otherwise, terms such as "first" and "second" as used herein do not imply order or sequence.

[0054] Figure 1 This is a schematic diagram of a known LED package structure. Figure 2 This is a schematic diagram of the LED packaging structure according to the first embodiment of this utility model. Please refer to... Figure 1 and Figure 2 As shown, the LED packaging structure 1A of the first embodiment differs from the known LED packaging structure 1. The LED packaging structure 1A of the first embodiment includes a base layer 10, an LED 20, a housing 30, a first light-transmitting layer 40, and a second light-transmitting layer 50.

[0055] The substrate 10 may include, for example, a first surface and a second surface disposed opposite to each other, and the substrate 10 may include through-holes penetrating the first surface and the second surface. The through-holes may be formed, for example, by drilling through the substrate 10 using a drill bit or laser. In some embodiments, the through-holes may be plated with copper; however, this is not a limitation. In some embodiments, the substrate 10 is an insulating material. The glass transition temperature of the substrate 10 may be, for example, greater than or equal to 235 or 280 degrees Celsius, thereby allowing the substrate 10 to maintain its structure without deformation during the reflow soldering process. The material of the base layer 10 may be a polymer material, such as FR4, CAN3, polyimide (PI), polyphenylene sulfide (PPS), polyamide-imide (PAI), polyetheretherketone (PEEK), liquid crystal polymer (LCP), carbon fiber reinforced polymer (CFRP), or bismaleimide-triazine resin (BT Resin), however, it is not limited thereto.

[0056] A light-emitting diode 20 is disposed on a substrate 10. The light-emitting diode 20 may include a conductive layer 21 in contact with the substrate 10. The conductive layer 21 may, for example, contact copper plating on a via of the substrate 10 to form an electrical connection. In this embodiment, the light-emitting diode 20 is an ultraviolet light-emitting diode, which can emit ultraviolet light with a wavelength greater than or equal to 100 nanometers and less than or equal to 420 nanometers. Examples of ultraviolet light-emitting diodes include diamond, aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and aluminum gallium indium nitride (AlGaInN). In other embodiments, the light-emitting diode 20 may include, for example, a red light-emitting diode (e.g., aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), indium gallium aluminum phosphide (AlGaInP), gallium phosphide-doped zinc oxide (GaP:ZnO)), an orange light-emitting diode (e.g., gallium arsenide phosphide (GaAsP), indium gallium aluminum phosphide (AlGaInP), gallium phosphide-doped X (GaP:X)), or a yellow light-emitting diode (e.g., gallium arsenide phosphide (GaAsP), indium gallium aluminum phosphide (AlGaInP)). Gallium phosphide doped with nitrogen (GaP:N) can be used to produce light-emitting diodes (LEDs), such as green LEDs (e.g., indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum indium gallium phosphide (AlGaInP), and aluminum gallium phosphide (lGaP)), blue LEDs (e.g., zinc selenide (ZnSe), indium gallium nitride (InGaN), and silicon carbide (SiC)), violet LEDs (e.g., indium gallium nitride (InGaN)), or infrared LEDs (e.g., gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs)). The form of the LED can also include organic light-emitting diodes (OLEDs), however, this is not a limitation.

[0057] The housing 30 is disposed on the base layer 10. The housing 30 and the light-emitting diode 20 may, for example, be disposed on the same side of the base layer 10, and the housing 30 may, for example, surround the light-emitting diode 20. The height of the housing 30 may, for example, be greater than the height of the light-emitting diode 20. In some embodiments, the material of the housing 30 may be, for example, ceramic, metal, or quartz, wherein the metal may be, for example, aluminum, and the quartz may be, for example, transparent quartz; however, this is not limiting.

[0058] A first light-transmitting layer 40 is disposed on the light-emitting diode 20; the first light-transmitting layer 40 is sandwiched between the light-emitting diode 20 and the second light-transmitting layer 50. The first light-transmitting layer 40 may cover part or all of a surface of the light-emitting diode 20 and be in contact with the second light-transmitting layer 50. The first light-transmitting layer 40 may be transparent, for example, within the light emission bands of the light-emitting diode 20; for instance, the light transmittance of the first light-transmitting layer 40 may be greater than or equal to 80% within the light emission bands of the light-emitting diode 20.

[0059] In some embodiments, the refractive index of the first light-transmitting layer 40 may be, for example, between 0.85 times the refractive index of the second light-transmitting layer 50 and 1.15 times the refractive index of the light-emitting diode 20. The refractive index of the second light-transmitting layer 50 may be, for example, 1.5, the refractive index of the light-emitting diode 20 may be, for example, 2.5, and the refractive index of the first light-transmitting layer 40 may be, for example, greater than or equal to 1.275 and less than or equal to 2.875. The refractive index of the first light-transmitting layer 40 may be, for example, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, or 2.8. Therefore, the proportion of first reflected light R1 formed at the interface between the light-emitting diode 20 and the first light-transmitting layer 40 is relatively low, and the proportion of second reflected light R2 formed at the interface between the first refracted light L1 and the second light-transmitting layer 50 is relatively low, thereby increasing the proportion of third refracted light L3 emitted from the light-emitting diode package structure 1A to the outside. As a result, the energy of the light emitted from the light-emitting diode package structure 1A in the first embodiment can be increased compared to the energy of the light emitted from the known light-emitting diode package structure 1.

[0060] In some embodiments, the first light-transmitting layer 40 is a non-adhesive light-transmitting layer. Non-adhesive means it has no adhesiveness or very low adhesiveness, making it impossible to bond the light-emitting diode 20 and the second light-transmitting layer 50. Materials that are transparent and adhesive in the ultraviolet light band are typically damaged by ultraviolet light. In some embodiments, when the light-emitting diode 20 is an ultraviolet light-emitting diode, to avoid damage to the first light-transmitting layer 40 by ultraviolet light, the first light-transmitting layer 40 is a non-adhesive light-transmitting layer, preventing the light-emitting diode 20 and the second light-transmitting layer 50 from being directly bonded through the first light-transmitting layer 40. In some embodiments, an adhesive layer may be sandwiched between the housing 30 and the second light-transmitting layer 50 to bond the housing 30 and the second light-transmitting layer 50; however, this is not a limitation.

[0061] Figure 3 This is a schematic diagram illustrating the manufacturing process of the light-emitting diode (LED) package structure according to the first embodiment of this utility model. Please refer to... Figure 2 and Figure 3As shown, in some embodiments, the material of the first light-transmitting layer 40 may be, for example, an elastic material; however, this is not a limitation. During manufacturing, the first light-transmitting layer 40 may be coated onto one surface of the light-emitting diode 20, and may be slightly higher than the housing 30. Next, a second light-transmitting layer 50 is disposed on the first light-transmitting layer 40 and the housing 30, so that the first light-transmitting layer 40 is compressed and uniformly contacts the light-emitting diode 20 and the second light-transmitting layer 50, expelling gas between the first light-transmitting layer 40 and the light-emitting diode 20, and between the first light-transmitting layer 40 and the second light-transmitting layer 50, ensuring that there are no air bubbles between the first light-transmitting layer 40 and the light-emitting diode 20, and also between the first light-transmitting layer 40 and the second light-transmitting layer 50, thereby preventing light reflection caused by air bubbles. In some embodiments, an adhesive layer may be sandwiched between the housing 30 and the second light-transmitting layer 50 to bond the housing 30 and the second light-transmitting layer 50 together. An adhesive layer may be sandwiched between the housing 30 and the base layer 10 to bond the housing 30 and the base layer 10, however, this is not a limitation.

[0062] The second light-transmitting layer 50 is disposed on the housing 30. The second light-transmitting layer 50 may be transparent, for example, within the emission wavelength range of the light-emitting diode 20. For instance, the light transmittance of the second light-transmitting layer 50 within the emission wavelength range of the light-emitting diode 20 may be greater than or equal to 80%. In some embodiments, the material of the second light-transmitting layer 50 may be, for example, quartz, magnesium fluoride, calcium fluoride, glass, or polytetrafluoroethylene (PTFE / Teflon), but this is not limiting.

[0063] Figure 4 This is a spectrum diagram showing the light transmittance of the second light-transmitting layer in a light-emitting diode (LED) package structure. Please refer to... Figure 2 and Figure 4 As shown, the transmittance of ultraviolet light varies with its wavelength and the material of the second light-transmitting layer 50. In this embodiment, the light-emitting diode 20 is an ultraviolet light-emitting diode, emitting ultraviolet light with a wavelength greater than or equal to 100 nanometers and less than or equal to 420 nanometers. The material of the second light-transmitting layer 50 can be, for example, ultra-high purity quartz 51. In other embodiments, the light-emitting diode 20 is an ultraviolet light-emitting diode, emitting ultraviolet light with a wavelength greater than or equal to 265 nanometers and less than or equal to 280 nanometers, such as... Figure 4 At the mid-band U1 marking location, the material of the second light-transmitting layer 50 can be, for example, ultra-high purity quartz 51, high purity quartz 52, or standard quartz 53. In other embodiments, the light-emitting diode 20 is an ultraviolet light-emitting diode that emits ultraviolet light with a wavelength greater than or equal to 310 nanometers and less than or equal to 400 nanometers, and the material of the second light-transmitting layer 50 can be, for example, ultra-high purity quartz 51, high purity quartz 52, standard quartz 53, or optical glass 54.

[0064] The base layer 10, housing 30, and second light-transmitting layer 50 enclose a sealed space 90, within which the light-emitting diode 20 is located. The base layer 10, housing 30, and second light-transmitting layer 50 are in close contact with each other, preventing the sealed space 90 from communicating with the outside of the light-emitting diode package structure 1A, thus preventing external air and other substances from entering the sealed space 90. When the conductive layer 11 of the base layer 10 is connected to a power source, the light-emitting diode 20 emits light. At the interface between the light-emitting diode 20 and the first light-transmitting layer 40, the light emits a first refracted light L1 and a first reflected light R1. At the interface between the first light-transmitting layer 40 and the second light-transmitting layer 50, the first refracted light L1 emits a second refracted light L2 and a second reflected light R2. At the interface between the second light-transmitting layer 50 and the external air or other medium of the light-emitting diode package structure 1A, the second refracted light L2 emits a third refracted light L3 and a third reflected light R3. In this way, the light-emitting diode package structure 1A can project light to the outside.

[0065] As described above, the LED packaging structure 1A of this embodiment has a base layer 10, a housing 30 and a second light-transmitting layer 50 enclosing a sealed space 90, which can protect the surface of the LED 20 to facilitate surface-mount technology (SMT) and prevent moisture, dust and other debris from falling on the LED 20, causing problems such as cracking, burning, discoloration, scratches, light blocking and affecting heat dissipation.

[0066] Furthermore, the LED package structure 1A of this embodiment has a first light-transmitting layer 40, which increases the brightness and luminous efficiency of the LED package structure 1A. The refractive index of the first light-transmitting layer 40 can, for example, be between 0.85 times the refractive index of the second light-transmitting layer 50 and 1.15 times the refractive index of the LED 20, thereby reducing reflection caused by large changes in refractive index and increasing the brightness and luminous efficiency of the LED package structure 1A. The first light-transmitting layer 40 can, for example, be a non-adhesive light-transmitting layer, thereby preventing the structure of the first light-transmitting layer 40 from being damaged by ultraviolet light. The material of the first light-transmitting layer 40 can, for example, be an elastic material, ensuring that there are no air bubbles between the first light-transmitting layer 40 and the LED 20, and also no air bubbles between the first light-transmitting layer 40 and the second light-transmitting layer 50, thereby preventing light reflection caused by air bubbles. The above-mentioned features of the LED package structure 1A of this embodiment can increase the brightness and luminous efficiency of the LED package structure 1A by 3% to 20%.

[0067] Figure 5 This is a schematic diagram of the light-emitting diode package structure according to a second embodiment of the present invention. (Refer to...) Figure 5 As shown, the LED package structure 1B of the second embodiment and the LED package structure 1A of the first embodiment (as shown) Figure 2The difference (shown) is that the LED package structure 1B further includes an adhesive layer 61 and an inorganic layer 62. The base layer 10, LED 20, housing 30, first light-transmitting layer 40 and second light-transmitting layer 50 of the second embodiment are similar to those of the first embodiment, and will not be described again here.

[0068] An adhesive layer 61 is disposed on the housing 30. The adhesive layer 61 is adhesive and can bond the housing 30 and the inorganic layer 62. The adhesive layer 61 can cover part or all of a surface of the housing 30. In some embodiments, the adhesive layer 61 is a heat-resistant adhesive, meaning an adhesive that will not decompose during the reflow soldering process. In some embodiments, the reflow soldering process temperature is greater than or equal to 235 degrees Celsius and less than or equal to 280 degrees Celsius. The adhesive layer 61 can be, for example, silicone, epoxy resin, Teflon, or double-sided tape.

[0069] An inorganic layer 62 is sandwiched between the adhesive layer 61 and the second light-transmitting layer 50. The inorganic layer 62 may cover part or all of a surface of the adhesive layer 61 and be in contact with the second light-transmitting layer 50. In some embodiments, the light transmittance of the inorganic layer 62 in the light emission band of the light-emitting diode 20 is substantially zero. Substantially zero light transmittance means that the inorganic layer 62 blocks sufficient light rays such as the third reflected light R3 in the light emission band of the light-emitting diode 20, preventing the adhesive layer 61 from being irradiated by the third reflected light R3 and thus degraded, leading to the disintegration of the light-emitting diode package structure 1B. In some embodiments, the material of the inorganic layer 62 may be, for example, gold, silver, nickel, copper, tin, or lead, and it is deposited on the second light-transmitting layer 50 using a metal plating process.

[0070] As described above, the LED package structure 1B of this embodiment, in addition to having the LED package structure 1A (such as...), Figure 2 In addition to the functions shown, the LED package structure 1B also has an adhesive layer 61 and an inorganic layer 62. The inorganic layer 62 can protect the adhesive layer 61 from damage by ultraviolet light and other light, thereby increasing the structural stability of the LED package structure 1B, maintaining reliability and increasing service life.

[0071] In summary, the LED packaging structure of this utility model has a base layer, a shell, and a second light-transmitting layer forming a sealed space, which can protect the surface of the LED to facilitate surface-mount technology (SMT) and prevent moisture, dust, and other debris from falling on the LED, causing problems such as cracking, burning, discoloration, scratches, light blocking, and affecting heat dissipation.

[0072] Furthermore, the LED packaging structure of this invention has a first light-transmitting layer, which increases the brightness and luminous efficiency of the LED packaging structure. The refractive index of the first light-transmitting layer can, for example, be between 0.85 times the refractive index of the second light-transmitting layer and 1.15 times the refractive index of the LED, thereby reducing reflection caused by large changes in refractive index and increasing the brightness and luminous efficiency of the LED packaging structure. The first light-transmitting layer can, for example, be a non-stick light-transmitting layer, thereby preventing its structure from being damaged by ultraviolet light. The material of the first light-transmitting layer can, for example, be an elastic material, ensuring that there are no air bubbles between the first light-transmitting layer and the LED, and also no air bubbles between the first and second light-transmitting layers, thereby preventing light reflection caused by air bubbles. The above features of the LED packaging structure of this invention can increase the brightness and luminous efficiency of the LED packaging structure by 3% to 20%.

[0073] In addition, this invention has an adhesive layer and an inorganic layer. The inorganic layer can protect the adhesive layer from damage by ultraviolet light and other rays, thereby increasing the structural stability of the LED packaging structure, maintaining reliability and increasing service life.

[0074] Unless otherwise defined, terms such as "substantially" and "approximately" are used to describe and narrate small changes. When used in connection with an event or situation, the term may include the exact moment the event or situation occurred, or an approximate point in time. For example, when used in connection with a numerical value, the term may include a specific range of variation that is less than or equal to that numerical value.

[0075] The foregoing outlines components of several embodiments to enable those skilled in the art to better understand the concepts of the embodiments of this invention. Those skilled in the art should understand that other processes and structures can be designed or modified based on the embodiments of this invention to achieve the same purpose and / or benefits as the embodiments described herein. Those skilled in the art should also understand that these equivalent structures do not depart from the spirit and scope of this invention, and various changes, substitutions, and other options can be made therein without departing from the spirit and scope of this invention. Therefore, the scope of protection of this invention shall be determined by the appended claims.

Claims

1. A light-emitting diode (LED) packaging structure, characterized in that, include: One grassroots level; A light-emitting diode is mounted on this substrate; A housing is installed on this base layer; A first light-transmitting layer is disposed on the light-emitting diode; and A second light-transmitting layer is disposed on the first light-transmitting layer; The first light-transmitting layer is sandwiched between the light-emitting diode and the second light-transmitting layer; the base layer, the housing, and the second light-transmitting layer enclose a sealed space, and the light-emitting diode is located within the sealed space.

2. The light-emitting diode packaging structure according to claim 1, characterized in that, The refractive index of the first light-transmitting layer is between 0.85 times the refractive index of the second light-transmitting layer and 1.15 times the refractive index of the light-emitting diode.

3. The light-emitting diode packaging structure according to claim 1, characterized in that, The material of the first light-transmitting layer is an elastic material.

4. The light-emitting diode packaging structure according to claim 1, characterized in that, Including: An adhesive layer is sandwiched between the housing and the second light-transmitting layer.

5. The light-emitting diode packaging structure according to claim 4, characterized in that, The adhesive layer is a heat-resistant adhesive material.

6. The light-emitting diode packaging structure according to claim 1, characterized in that, Including: An adhesive layer is disposed on the housing; and An inorganic layer is sandwiched between the adhesive layer and the second light-transmitting layer.

7. The light-emitting diode packaging structure according to claim 6, characterized in that, The inorganic layer has a light transmittance of essentially 0 in one emission band of the light-emitting diode.

8. The light-emitting diode packaging structure according to claim 6, characterized in that, The inorganic layer is made of gold, silver, nickel, copper, tin, or lead.

9. The light-emitting diode packaging structure according to claim 1, characterized in that, The light-emitting diode is an ultraviolet light-emitting diode; the housing is made of ceramic, metal or quartz; the second light-transmitting layer is made of quartz, magnesium fluoride, calcium fluoride, glass or polytetrafluoroethylene.

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