Polycrystalline silicon deposition furnace tube
By setting up a flow equalization component and a heating component inside the polycrystalline silicon deposition furnace tube, the problem of uneven distribution of process gas was solved, resulting in a more uniform polycrystalline silicon deposition effect and improving production efficiency and experimental accuracy.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
- Filing Date
- 2025-04-23
- Publication Date
- 2026-05-19
AI Technical Summary
The uneven distribution of process gases in existing polycrystalline silicon deposition furnace tubes leads to poor deposition uniformity.
A flow equalization component is installed inside the furnace tube, including a built-in flow equalization tube and spiral blades. The flow equalization component equalizes the gas output from the inlet pipe. The gas distribution is further equalized by the flow equalization inlet hole and spray hole. The gas uniformity is optimized by combining the annular heating rod and vacuum device.
This method achieves uniform distribution of process gases within the furnace tube, improves the uniformity of polysilicon deposition, and avoids resource waste and experimental misguidance.
Smart Images
Figure CN224258852U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor fabrication technology, and in particular to a polycrystalline silicon deposition furnace tube. Background Technology
[0002] Polycrystalline silicon deposition refers to the process of forming a thin film of polycrystalline silicon on a substrate during semiconductor manufacturing using methods such as chemical vapor deposition (CVD). Due to its excellent electrical conductivity and good compatibility with silicon, polycrystalline silicon is widely used in integrated circuits, solar cells, and other fields.
[0003] Polycrystalline silicon deposition furnaces are key pieces of equipment used in chemical vapor deposition (CVD) processes to form thin films of polycrystalline silicon on substrates. This equipment is commonly used in multiple stages of semiconductor manufacturing processes, including the production of integrated circuits and solar cells.
[0004] Current polycrystalline silicon deposition furnace tubes suffer from poor deposition uniformity due to uneven distribution of process gases within the tube. Utility Model Content
[0005] The purpose of this application is to provide a polycrystalline silicon deposition furnace tube that can make the process gas more evenly distributed inside the furnace tube, thereby making the deposition effect more uniform.
[0006] The embodiments of this application can be implemented as follows:
[0007] In a first aspect, the present invention provides a polycrystalline silicon deposition furnace tube, including a furnace tube and an inlet pipe and a flow equalization assembly disposed within the furnace tube; the furnace tube has a reaction zone, the flow equalization assembly surrounds the reaction zone, the inlet pipe is located between the flow equalization assembly and the furnace tube, and the flow equalization assembly is used to homogenize the gas output from the inlet pipe and send it into the reaction zone.
[0008] In an optional embodiment, the flow equalization component includes a built-in flow equalization tube, and the tube wall of the built-in flow equalization tube is provided with a plurality of flow equalization inlet holes.
[0009] In an optional embodiment, the flow equalization assembly further includes helical blades that are wound around the built-in flow equalization tube.
[0010] In an optional embodiment, the helical blade is a counter-rotating double helical blade.
[0011] In an optional embodiment, the tilt angle of the helical blade is 30 to 50°.
[0012] In an optional embodiment, each of the uniform flow inlet holes is divided into multiple groups arranged at equal intervals along the axial direction of the built-in uniform flow tube, and multiple uniform flow inlet holes in each group are arranged at equal intervals along the circumference of the built-in uniform flow tube.
[0013] In an optional embodiment, the air inlet pipe is provided with a plurality of evenly distributed spray holes facing the flow equalization component to spray gas onto the flow equalization component.
[0014] In an optional embodiment, the air inlet pipe includes two spray ring pipes and a spray straight pipe connected between the two spray ring pipes. The two spray ring pipes are located at both ends of the furnace tube. The spray straight pipe is provided with a plurality of spray holes at equal intervals along its own length direction, and the spray ring pipe is provided with a plurality of spray holes at equal intervals along its own circumference.
[0015] In an optional embodiment, the polycrystalline silicon deposition furnace tube further includes a heating assembly, which includes an annular heating rod surrounding the furnace tube and auxiliary heating elements at both ends of the furnace tube. The number of annular heating rods is multiple and they are arranged at intervals along the axial direction of the furnace tube.
[0016] In an optional embodiment, the polysilicon deposition furnace tube further includes a vacuum pumping device connected to one end of the furnace tube.
[0017] The beneficial effects of the embodiments of this application include, for example:
[0018] By installing a flow equalization component inside the furnace tube, the process gas input through the inlet pipe is homogenized, resulting in a more uniform distribution of the process gas within the furnace tube. This homogenized process gas then enters the reaction zone for deposition, leading to a more uniform deposition effect. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0020] Figure 1 This is a schematic diagram of a polysilicon deposition furnace tube according to an embodiment of this application;
[0021] Figure 2 This is a schematic diagram of the flow equalization component according to an embodiment of this application;
[0022] Figure 3 This is a schematic diagram of the intake pipe according to an embodiment of this application;
[0023] Figure 4 for Figure 2 A schematic diagram showing the tilt angle of the helical blades relative to the tangential direction of the built-in flow equalizer;
[0024] Figure 5 This is a schematic diagram of the heating assembly according to an embodiment of this application.
[0025] Icons: 100-Polycrystalline silicon deposition furnace tube; 110-Furnace tube; 120-Inlet pipe; 121-Spray ring pipe; 122-Spray straight pipe; 123-Spray hole; 130-Helical blade; 140-Built-in flow equalizer; 141-Flow equalizer inlet; 150-Annular heating rod; 151-Auxiliary heating. Detailed Implementation
[0026] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0027] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0028] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0029] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0030] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0031] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0032] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0033] refer to Figures 1 to 3 This application discloses a polycrystalline silicon deposition furnace tube 100, which includes a furnace tube 110 and an inlet pipe 120 and a flow equalization component disposed within the furnace tube 110. The furnace tube 110 has a reaction zone, the flow equalization component surrounds the reaction zone, and the inlet pipe 120 is located between the flow equalization component and the furnace tube 110. The flow equalization component is used to equalize the gas output from the inlet pipe 120 and send it into the reaction zone.
[0034] In this way, by setting a flow equalization component inside the furnace tube 110, the process gas input from the gas inlet pipe 120 is homogenized by the flow equalization component, and the process gas is more evenly distributed inside the furnace tube 110. Thus, the homogenized process gas can enter the reaction zone for deposition, resulting in a more uniform deposition effect.
[0035] Specifically, the flow equalization component includes a built-in flow equalization tube 140, and multiple flow equalization inlet holes 141 are provided on the tube wall of the built-in flow equalization tube 140. This can force the process gas to enter the built-in flow equalization tube 140 from each flow equalization inlet hole 141 and then reach the reaction zone, thereby achieving the effect of equalizing the gas intake.
[0036] Optionally, the flow equalization assembly also includes a spiral blade 130, which is wound around the built-in flow equalization tube 140. In this way, the process gas output from the intake pipe 120 is first homogenized by the spiral blade 130 and then enters the built-in flow equalization tube 140 through the flow equalization intake pipe 120 on the built-in flow equalization tube 140, and finally reaches the reaction zone, thereby further improving the uniformity of the intake.
[0037] Among them, the spiral blade 130 is a counter-rotating double spiral blade 130, which means that two sets of spiral blades 130 rotate in opposite directions. This design helps to better homogenize the gas and also helps to quickly mix and homogenize various process gases.
[0038] Combination Figure 4 The tilt angle α of the helical blade 130 is 30 to 50°, for example 30°, to help homogenize gas convection.
[0039] In this embodiment, each uniform flow inlet 141 is divided into multiple groups that are equally spaced along the axial direction of the built-in uniform flow tube 140. In each group, multiple uniform flow inlets 141 are equally spaced along the circumference of the built-in uniform flow tube 140. In this way, the uniform arrangement of each uniform flow inlet 141 on the built-in uniform flow tube 140 is conducive to the uniform entry of gas into the built-in uniform flow tube 140 and reaching the reaction zone.
[0040] Continue to refer to Figure 3 The air inlet pipe 120 is provided with multiple evenly distributed spray holes 123, which face the flow equalization component to spray process gas onto the flow equalization component. By spraying the gas out of the flow equalization component, the gas can be initially dispersed, further improving the uniformity of the gas reaching the reaction zone.
[0041] The air inlet pipe 120 includes two spray ring pipes 121 and a spray straight pipe 122 connected between the two spray ring pipes 121. The two spray ring pipes 121 are located at both ends of the furnace tube 110. The spray straight pipe 122 is provided with multiple spray holes 123 at equal intervals along its own length direction. The spray ring pipes 121 are provided with multiple spray holes 123 at equal intervals along their own circumference. In this way, the air inlet air is sprayed inward from both ends and downward from the top, which disperses the airflow and improves the uniformity of gas distribution.
[0042] In addition, combined Figure 5 The polycrystalline silicon deposition furnace tube 100 also includes a heating assembly, which includes an annular heating rod 150 surrounding the furnace tube 110 and auxiliary heating elements 151 located at both ends of the furnace tube 110. The number of annular heating rods 150 is multiple, and they are arranged at intervals along the axial direction of the furnace tube 110 so that the reaction zone inside the furnace tube 110 has a suitable temperature for deposition reaction.
[0043] The polycrystalline silicon deposition furnace tube 100 also includes a vacuum pumping device connected to one end of the furnace tube 110. When the furnace tube 110 returns to atmospheric pressure, inert gas enters the furnace tube 110 from both ends simultaneously. When vacuuming, only the spray ring tube 121 at one end works, while the other end is pumped out through the vacuum pumping device, which can completely remove the residual process gas in the furnace tube 110.
[0044] In summary, the embodiments of this application disclose a polycrystalline silicon deposition furnace tube 100, which can significantly improve uniformity and avoid the problems that previously resulted in only a small portion of the entire vessel achieving the expected effect due to uniformity issues, wasting resources and misleading experiments.
[0045] Finally, it should be noted that in this document, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0046] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A polycrystalline silicon deposition furnace tube, characterized in that, It includes a furnace tube (110) and an inlet pipe (120) and a flow equalization assembly disposed within the furnace tube (110); the furnace tube (110) has a reaction zone, the flow equalization assembly surrounds the reaction zone, the inlet pipe (120) is located between the flow equalization assembly and the furnace tube (110), and the flow equalization assembly is used to equalize the gas output from the inlet pipe (120) and send it into the reaction zone.
2. The polycrystalline silicon deposition furnace tube according to claim 1, characterized in that, The flow equalization component includes a built-in flow equalization tube (140), and the built-in flow equalization tube (140) has a plurality of flow equalization air inlets (141) on its tube wall.
3. The polycrystalline silicon deposition furnace tube according to claim 2, characterized in that, The flow equalization assembly also includes a helical blade (130) that is wound around the built-in flow equalization tube (140).
4. The polycrystalline silicon deposition furnace tube according to claim 3, characterized in that, The helical blade (130) is a counter-rotating double helical blade (130).
5. The polycrystalline silicon deposition furnace tube according to claim 3 or 4, characterized in that, The inclination angle of the helical blade (130) is 30-50°.
6. The polycrystalline silicon deposition furnace tube according to claim 2, characterized in that, Each of the uniform flow inlet holes (141) is divided into multiple groups that are equally spaced along the axial direction of the built-in uniform flow tube (140), and multiple uniform flow inlet holes (141) in each group are equally spaced along the circumference of the built-in uniform flow tube (140).
7. The polycrystalline silicon deposition furnace tube according to claim 1, characterized in that, The air inlet pipe (120) is provided with a plurality of uniformly distributed spray holes (123), which are oriented toward the flow equalization component to spray gas onto the flow equalization component.
8. The polycrystalline silicon deposition furnace tube according to claim 7, characterized in that, The air inlet pipe (120) includes two spray ring pipes (121) and a spray straight pipe (122) connected between the two spray ring pipes (121). The two spray ring pipes (121) are located at both ends of the furnace tube (110). The spray straight pipe (122) is provided with a plurality of spray holes (123) at equal intervals along its own length direction. The spray ring pipe (121) is provided with a plurality of spray holes (123) at equal intervals along its own circumference.
9. The polycrystalline silicon deposition furnace tube according to claim 1, characterized in that, The polycrystalline silicon deposition furnace tube also includes a heating assembly, which includes an annular heating rod (150) surrounding the furnace tube (110) and auxiliary heating elements (151) at both ends of the furnace tube (110). The number of the annular heating rods (150) is multiple, and they are arranged at intervals along the axial direction of the furnace tube (110).
10. The polycrystalline silicon deposition furnace tube according to claim 1, characterized in that, The polycrystalline silicon deposition furnace tube also includes a vacuum pumping component, which is connected to one end of the furnace tube (110).