Water ion generator

Abstract

The utility model provides a water ion generator. The water ion generator comprises a semiconductor refrigerator; the dielectric barrier discharge plasma generator covers the cold end face of the semiconductor cooler, the dielectric barrier discharge plasma generator comprises a discharge upper polar plate, a discharge lower polar plate and a dielectric layer between the discharge upper electrode and the discharge lower electrode, the discharge upper polar plate is a patterned electrode, and the discharge lower polar plate is a patterned electrode. The dielectric layer is exposed and is used for collecting condensed water condensed on the cold end surface and exciting the condensed water into water ions. Due to the adoption of the plane structure design, the discharge area is greatly increased, and a traditional point-shaped area of needle tip discharge is changed into a large-area plane area, so that the positive and negative ion generation efficiency is remarkably improved. Meanwhile, the condensation area of the plane structure is far larger than that of the needle point structure, more condensate water can be collected, and the generation amount of water ions is further increased.

Description

Technical Field

[0001] This utility model relates to the field of MEMS, and in particular to a water ion generator. Background Technology

[0002] Water ion technology, as a novel air purification and treatment technology, has received widespread attention in recent years. Traditional water ion generators primarily employ a needle-tip discharge method, using high voltage to generate corona discharge at the needle tip, ionizing the surrounding air and causing it to combine with water molecules to form water ions. However, this technology has several drawbacks:

[0003] Low ion generation efficiency: Needle tip discharge is a partial discharge mode with a small discharge area, resulting in a limited amount of positive and negative ions generated, which is difficult to meet the needs of large-scale air purification or efficient water treatment.

[0004] Insufficient condensate collection: The small condensation area of ​​the needle-tip structure can only collect a small amount of condensate, which limits the amount of water ions generated, and the performance drops significantly, especially in low humidity environments.

[0005] The manufacturing process is complex: the needle tip discharge structure has extremely high requirements for electrode precision. The manufacturing process requires precise control of the needle tip shape and spacing, which is difficult, has high production costs, and low yield.

[0006] Poor stability: The tip is prone to discharge performance degradation due to contamination or wear, requiring frequent maintenance and replacement, and has a short service life.

[0007] High ozone generation: Excessive ozone is easily generated during high-voltage needle tip discharge, and ozone is a harmful gas that has adverse effects on human health and the environment.

[0008] Therefore, a new type of water ion generator is needed that can overcome the above-mentioned defects, improve the efficiency and stability of water ion generation, and at the same time reduce manufacturing costs and ozone generation. Summary of the Invention

[0009] The technical problem to be solved by this utility model is to provide a water ion generator based on planar dielectric barrier discharge, which can significantly improve the water ion generation efficiency, simplify the manufacturing process, reduce costs, and reduce ozone generation to meet a wider range of application needs.

[0010] To address the aforementioned problems, this utility model provides a water ion generator, comprising: a semiconductor cooler; and a dielectric barrier discharge plasma generator covering the cold end face of the semiconductor cooler. The dielectric barrier discharge plasma generator includes an upper discharge electrode, a lower discharge electrode, and a dielectric layer between the upper and lower discharge electrodes. The upper discharge electrode is a patterned electrode to expose the dielectric layer for collecting condensate water condensed on the cold end face and exciting it into water ions.

[0011] Optionally, the semiconductor cooler includes: a thermoelectric element comprising P-type and N-type semiconductor elements, or a metallic material selected from bismuth telluride, aluminum, nickel, or their alloys; a cold-end cooling upper electrode and a hot-end cooling lower electrode for connecting the thermoelectric element to allow driving current to flow into the thermoelectric element to drive it; and a cold-end surface disposed on the surface of the cooling upper electrode for collecting condensate. The thermoelectric element comprises a thermopile of multiple P-type and N-type semiconductor elements forming a series PN junction. The semiconductor cooler also includes a heat sink disposed on the hot-end surface of the cooling lower electrode. The materials of the cold-end cooling upper electrode and the hot-end cooling lower electrode are metal, silver paste, or solder. The semiconductor cooler also includes a support layer disposed on the hot-end surface of the cooling lower electrode, the material of which is ceramic or silicon wafer.

[0012] Optionally, the dielectric layer material is a hydrophilic ceramic or a hydrophilic polymer material. The dielectric layer is an organic dielectric, and its material includes polyimide or pyrene. The dielectric layer is an inorganic dielectric, and its material includes ceramic, silicon oxide, or silicon nitride.

[0013] When the thermoelectric cooler operates, the temperature of the cold end face decreases, and moisture in the surrounding air condenses at the cold end face, forming condensate. This condensate diffuses through the hydrophilic dielectric layer and covers the exposed area on the surface of the dielectric layer. Simultaneously, a high voltage is applied between the upper and lower discharge plates, forming a uniform dielectric barrier discharge plasma due to the barrier effect of the dielectric layer. The high-energy electrons and ions generated during the discharge process interact with the condensate, exciting and ionizing water molecules to form plasma rich in hydroxyl radicals (·OH) and superoxide anions (O2). - ), hydrogen ions (H) + It generates water ions containing active ingredients such as hydrogen peroxide (H₂O). Due to its planar structure design, the discharge area is significantly increased, transforming from the point-like area of ​​traditional needle-tip discharge to a large planar area, thus significantly improving the efficiency of positive and negative ion generation. Simultaneously, the condensation area of ​​the planar structure is much larger than that of the needle-tip structure, enabling the collection of more condensate and further enhancing the amount of water ions generated. Attached Figure Description

[0014] Appendix Figure 1 The diagram shown is a structural schematic of the water ion generator according to a specific embodiment of this utility model. Detailed Implementation

[0015] The specific embodiments of the water ion generator provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0016] Appendix Figure 1The diagram shown is a structural schematic of a water ion generator according to a specific embodiment of the present invention, including: a semiconductor cooler 10; a dielectric barrier discharge plasma generator 20, covering the cold end face 14 of the semiconductor cooler. The dielectric barrier discharge plasma generator includes an upper discharge electrode 21, a lower discharge electrode 22, and a dielectric layer 23 between the upper and lower discharge electrodes. The upper discharge electrode 21 is a patterned electrode to expose the dielectric layer 23 for collecting condensate water condensed on the cold end face and exciting it into water ions.

[0017] After the semiconductor cooler 10 is powered on, the temperature of the cold end face 14 drops rapidly. When it falls below the air dew point temperature, water vapor in the air condenses on the cold end face and the exposed dielectric layer 23 to form liquid water. The hydrophilic dielectric layer material allows the condensate to spread rapidly, forming a uniform water film. A driving current is applied between the upper electrode 21 and the lower electrode 22, and a uniform dielectric barrier discharge is formed between the electrodes due to the obstruction of the dielectric layer 23. The high-energy electrons generated by the discharge collide with the water film, exciting and ionizing water molecules to generate a mixture rich in hydroxyl radicals (·OH) and superoxide anions (O2). - ), hydrogen ions (H) + It contains water ions of active ingredients such as hydrogen peroxide (HO).

[0018] The dielectric barrier discharge plasma generator 20 employs an electrode structure. Compared to a needle-tip-centered structure, where the electric field is highly concentrated in a very small area and the discharge is point-like, the upper discharge electrode of the dielectric barrier discharge plasma generator is a patterned electrode, forming a large-area planar structure with the lower discharge electrode and the dielectric layer. The larger discharge area results in a more uniform electric field distribution, which can excite more water molecules and generate a denser and more uniformly distributed plasma.

[0019] Furthermore, the dielectric layer 23 of the dielectric barrier discharge is made of a hydrophilic material, such as hydrophilic ceramics, polyimide, or pyrene, which allows the condensate collected on the cold end of the semiconductor cooler to spread rapidly and form a uniform water film. The large-area water film is in full contact with the discharge area, increasing the chance of water molecules being excited into water ions.

[0020] Furthermore, the electrode fabrication for needle tip discharge requires precise machining to create a sharp needle tip shape, demanding extremely high processing accuracy. This often necessitates specialized equipment and complex processes, resulting in high costs and low production efficiency. In contrast, the upper and lower electrodes for dielectric barrier discharge are relatively simple to fabricate. The patterned electrode of the upper electrode can be manufactured using conventional micromachining processes such as photolithography, etching, and screen printing, while the lower electrode is a standard flat plate, making fabrication easier. These processes are widely used in semiconductor manufacturing, printed circuit board fabrication, and ceramic substrate production, and are technologically mature and easily scalable for mass production.

[0021] Furthermore, the aforementioned structure is a planar stacked structure. Compared to traditional complex structures, its electrode fabrication does not require high-precision machining; patterned electrodes can be manufactured using conventional processes. During assembly, the planar components are easy to position and fit, reducing alignment difficulties. The entire production process is simplified, reducing production steps and time, thereby significantly reducing process difficulty and substantially improving manufacturing efficiency.

[0022] The dielectric layer 23 can be made of hydrophilic ceramic or hydrophilic polymer material.

[0023] The dielectric layer 23 can be made of hydrophilic ceramic. Hydrophilic ceramic has excellent hydrophilicity, which means that it can quickly and in large quantities adsorb and retain condensate. Moreover, the ceramic material itself has good insulation properties, which can effectively block current and prevent short circuits between the upper and lower discharge plates, ensuring the stable operation of the dielectric barrier discharge process.

[0024] The dielectric layer 23 can be made of a hydrophilic polymer material. Polyimide is a high-performance polymer material that not only has good hydrophilicity but also excellent mechanical properties and high-temperature resistance. Its molecular structure contains polar groups, which endow polyimide with the ability to interact with water molecules, enabling it to effectively adsorb condensate. Pyrelin is another commonly used organic dielectric material with extremely low water absorption and excellent moisture-proof properties. In some humidity-sensitive applications, the moisture-proof properties of Pyrelin play an important role. In high-humidity environments, Pyrelin can prevent excessive moisture from penetrating the dielectric layer, avoiding electrical performance degradation or material damage caused by moisture accumulation.

[0025] The dielectric layer 23 can be made of inorganic dielectric material. Among inorganic dielectric materials, ceramics, in addition to being hydrophilic and insulating, also possess high hardness and wear resistance. Silicon oxide is a common inorganic dielectric material with good insulating properties and chemical stability. The insulating properties of silicon oxide allow it to effectively block current during discharge, preventing short circuits between electrodes. Silicon nitride also has excellent properties; it has high thermal conductivity, which can effectively conduct heat during discharge, avoiding equipment failure due to localized overheating.

[0026] The semiconductor cooler 10 is a thermoelectric conversion device based on the Peltier effect. In this specific embodiment, the semiconductor cooler 10 is disposed on the surface of the support layer 17 and includes a cold-end cooling upper electrode 11, a hot-end cooling lower electrode 12, a thermoelectric element 13, a cold end face 14, and a heat sink 15.

[0027] The thermoelectric element 13 consists of alternating P-type semiconductor elements 131 and N-type semiconductor elements 132, forming a series-connected PN junction thermopile. The thermoelectric element 13 includes P-type and N-type semiconductor elements, or a metallic material selected from bismuth telluride, aluminum, nickel, or their alloys. Bismuth telluride (BiTe) and its alloys are preferred due to their high thermoelectric conversion efficiency. When direct current passes through, the current flows from the N-type to the P-type end, absorbing heat (cold end) and releasing heat (hot end) at the other end.

[0028] The cold-end cooling upper electrode 11 is located at the top of the thermoelectric element and is made of high thermal conductivity metals such as copper or aluminum, or ceramic materials such as aluminum nitride. Its surface is flat to promote uniform distribution of condensate. The hot-end cooling lower electrode 12 is located at the bottom of the thermoelectric element and is connected to the heat sink. Its material selection is similar to that of the cold-end electrode, but it must balance thermal conductivity and structural strength. In this specific embodiment, the materials of the cold-end cooling upper electrode and the hot-end cooling lower electrode are metal, silver paste, or solder.

[0029] The cold end face 14 is the upper surface of the cooling upper electrode 11. When the semiconductor cooler is working, the temperature of the cold end face drops rapidly below the dew point, causing the moisture in the air to condense into liquid water, providing a water source for subsequent plasma excitation.

[0030] The support layer 17 is disposed on the hot end surface of the cooling lower electrode 12, and the material of the support layer 17 is a heat dissipation material such as ceramic or silicon wafer.

[0031] The heat sink 15 is an optional component, mounted on the surface of the lower electrode 12 in the hot-end cooling system. This specific embodiment includes a support layer 17, which is further disposed below the support layer 17. Typically, an aluminum alloy fin structure or heat pipe cooling technology is used to dissipate heat into the environment through forced convection or natural heat dissipation, ensuring that the hot-end temperature of the thermoelectric cooler is maintained within a reasonable range and improving cooling efficiency.

[0032] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A water ion generator, characterized in that, include: Semiconductor coolers; A dielectric barrier discharge plasma generator is provided, covering the cold end face of the semiconductor cooler. The dielectric barrier discharge plasma generator includes an upper discharge electrode, a lower discharge electrode, and a dielectric layer between the upper and lower discharge electrodes. The upper discharge electrode is a patterned electrode to expose the dielectric layer for collecting condensate water condensed on the cold end face and exciting it into water ions.

2. The water ion generator according to claim 1, characterized in that, The semiconductor cooler includes: Thermoelectric elements include P-type semiconductor elements and N-type semiconductor elements, or metallic materials, wherein the metallic materials are selected from one of bismuth telluride, aluminum, nickel, or their alloys; The upper cooling electrode at the cold end and the lower cooling electrode at the hot end are used to connect the thermoelectric element so that the driving current can be passed into the thermoelectric element to drive the thermoelectric element to work. The cold end face is located on the surface of the upper electrode of the refrigeration unit and is used to collect condensate.

3. The water ion generator according to claim 2, characterized in that, The thermoelectric element comprises a thermopile consisting of multiple P-type semiconductor elements and N-type semiconductor elements forming a series PN junction.

4. The water ion generator according to claim 2, characterized in that, The semiconductor cooler also includes a heat sink disposed on the hot end surface of the cooling lower electrode.

5. The water ion generator according to claim 2, characterized in that, The materials of the upper cooling electrode at the cold end and the lower cooling electrode at the hot end are metal, silver paste, or solder.

6. The water ion generator according to claim 2, characterized in that, The semiconductor cooler also includes a support layer disposed on the surface of the hot end of the cooling lower electrode, and the material of the support layer is ceramic or silicon wafer.

7. The water ion generator according to claim 1, characterized in that, The medium layer material is a hydrophilic ceramic or a hydrophilic polymer material.

8. The water ion generator according to claim 7, characterized in that, The medium layer is an organic medium, and its material includes polyimide or phenelzine.

9. The water ion generator according to claim 7, characterized in that, The dielectric layer is an inorganic dielectric, and its material includes ceramics, silicon oxide, or silicon nitride.

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