Bidirectional switch semiconductor packaging device, AC / DC converter and automobile
By employing an isolated switch chip and heat dissipation substrate structure in a bidirectional switching semiconductor package device, and adding a creepage path extension on the surface of the plastic casing, the problems of large size and insufficient creepage distance of bidirectional switches are solved, achieving a balance between miniaturization and insulation safety.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SUZHOU INOSA UNITED POWER SYST CO LTD
- Filing Date
- 2025-04-08
- Publication Date
- 2026-05-22
AI Technical Summary
The bidirectional switches in existing single-stage matrix converters consist of two semiconductor switching devices connected top to top, resulting in a large number of devices, a large space occupation, and difficulty in meeting the creepage distance requirements of semiconductor switching devices.
The first and second switch chips are isolated and disposed on one side of the heat dissipation substrate and electrically connected through the heat dissipation substrate. A creepage path extension is provided on the surface of the plastic package to increase the creepage distance between the pins and the heat dissipation substrate, reduce the package size, and ensure insulation performance.
This approach achieves a reduction in the size of the bidirectional switch while meeting creepage distance requirements, avoiding insulation safety issues caused by excessively small size, and improving power output control and heat dissipation.
Smart Images
Figure CN224267269U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power supply technology, and in particular to a bidirectional switching semiconductor package device, an AC / DC converter, and an automobile. Background Technology
[0002] Existing single-stage matrix converters typically use bidirectional switches composed of two semiconductor switching devices connected top-to-top, resulting in a large number of switching devices and a large footprint. However, with the development of the automotive industry, the demand for smaller internal components is decreasing, consequently reducing the space required for bidirectional switches within single-stage matrix converters. Furthermore, insulation performance is a crucial indicator of semiconductor switching device performance, and the creepage distance between two different conductive components on a semiconductor switching device is a key characteristic for assessing insulation performance. Creepage distance is the shortest path along the insulating surface between two conductive components or between a conductive component and the protective interface of the device. Therefore, in some applications, sufficient creepage distance must be maintained between the two conductive components to ensure that semiconductor switching devices meet insulation safety standards. Thus, how to reduce the size of bidirectional switches while simultaneously meeting the creepage distance requirements between the two conductive components in semiconductor switching devices has become a pressing technical problem for the industry. Utility Model Content
[0003] The main objective of this application is to provide a bidirectional switching semiconductor packaged device, an AC / DC converter, and an automotive device, aiming to solve the technical problem of how to reduce the size of the bidirectional switch while taking into account the creepage distance requirements between the two conductive components in the semiconductor switching device.
[0004] To achieve the above objectives, this application provides a bidirectional switching semiconductor package device, which includes: a first switching chip, a second switching chip, a plastic encapsulation shell, and a heat dissipation substrate;
[0005] The first switch chip and the second switch chip are isolated on one side of the heat dissipation substrate, and the drain / source of the first switch chip and the corresponding drain / source of the second switch chip are electrically connected through the heat dissipation substrate.
[0006] The heat dissipation substrate is encapsulated in the plastic encapsulation housing, and one side of the heat dissipation substrate where the first switch chip and the second switch chip are disposed is covered by the plastic encapsulation housing, while at least a portion of the other side of the heat dissipation substrate is not covered by the plastic encapsulation housing;
[0007] A set of pins is provided on each side of the plastic encapsulation housing. One end of the pin is encapsulated in the plastic encapsulation housing and electrically connected to any electrode of the first switch chip or the second switch chip. The other end of the pin protrudes out of the plastic encapsulation housing.
[0008] The plastic-encapsulated housing has one side with the heat dissipation substrate, and a creepage path extension is formed between the heat dissipation substrate and any set of pins to increase the creepage distance between the pins and the heat dissipation substrate, so that the creepage distance is greater than the shortest spatial distance between the two.
[0009] In one embodiment, the creepage path extension is at least one groove formed on the surface of the plastic encapsulation housing, and at least one of the grooves is located between the heat dissipation substrate and any set of the pins.
[0010] In one embodiment, the cross-section of the groove is either a semicircle or a polygon.
[0011] In one embodiment, when at least two grooves are formed on the surface of the plastic-encapsulated housing, the cross-sectional area of the at least two grooves is either a semicircle or a polygon; or, the cross-sectional area of the at least two grooves is a combination of at least two shapes, either a polygon or a semicircle.
[0012] In one embodiment, the drain, source, and gate of the first switch chip are respectively connected to the first drain pin, the first source pin, and the first gate pin in one of a set of pins;
[0013] The drain, source, and gate of the second switching chip are respectively connected to the second drain pin, the second source pin, and the second gate pin in another set of pins;
[0014] The first gate pin and the second gate pin are arranged opposite each other on both sides of the plastic encapsulation housing, and are located at either end of the plastic encapsulation housing or adjacent to either end of the plastic encapsulation housing.
[0015] In one embodiment, the electrodes of the first switch chip and the second switch chip are electrically connected to their respective pins via metal wires or metal solder strips.
[0016] In one embodiment, any set of pins has a bent portion at one end protruding from the plastic encapsulation housing, the bending direction of the bent portion being towards the side of the plastic encapsulation housing where the heat dissipation substrate is disposed; or, the bending direction of the bent portion being away from the side of the plastic encapsulation housing where the heat dissipation substrate is disposed.
[0017] Furthermore, to achieve the above objectives, this application also proposes an AC / DC converter, which includes: a transformer, an AC / AC circuit electrically connected to the primary side of the transformer, and an AC / DC circuit disposed on and electrically connected to the secondary side of the transformer.
[0018] The AC / AC circuit includes several bidirectional switches, which employ bidirectional switch semiconductor packaging devices as described above.
[0019] Furthermore, to achieve the above objectives, this application also proposes an automobile that employs the AC / DC converter described above.
[0020] This application provides a bidirectional switching semiconductor package device, an AC / DC converter, and an automobile. The bidirectional switching semiconductor package device includes: a first switching chip, a second switching chip, a plastic encapsulation housing, and a heat dissipation substrate. The first switching chip and the second switching chip are isolated on one side of the heat dissipation substrate, and the drain / source of the first switching chip and the corresponding drain / source of the second switching chip are electrically connected through the heat dissipation substrate. The heat dissipation substrate is encapsulated in the plastic encapsulation housing, and the side of the heat dissipation substrate where the first switching chip and the second switching chip are disposed is covered by the plastic encapsulation housing, while at least a portion of the other side of the heat dissipation substrate is not covered by the plastic encapsulation housing. A set of pins is respectively disposed on both sides of the plastic encapsulation housing. One end of the pin is encapsulated in the plastic encapsulation housing and electrically connected to any electrode of the first switching chip or the second switching chip, and the other end of the pin protrudes outside the plastic encapsulation housing. On the side of the plastic encapsulation housing where the heat dissipation substrate is disposed, a creepage path extension portion is formed between the heat dissipation substrate and any set of pins to increase the creepage distance between the pin and the heat dissipation substrate, so that the creepage distance is greater than the shortest spatial distance between the two.
[0021] In a bidirectional switching semiconductor package, the drain or source of the first switching chip and the corresponding drain or source of the second switching chip are electrically connected through the same heat sink substrate. This forms a common-drain or common-source bidirectional switching structure and allows for simultaneous heat dissipation of both switching chips using a single heat sink substrate, reducing the overall package size. Simultaneously, on one side of the plastic package where the heat sink substrate is located, a creepage path extension is provided between the heat sink substrate and any set of pins located on either side of the plastic package to increase the creepage distance, ensuring that the creepage distance is greater than the shortest spatial distance between them. This structure allows the bidirectional switching semiconductor package to maintain a minimal package size while preventing issues related to power output control, heat dissipation, and electrical safety caused by excessively small package sizes. Attached Figure Description
[0022] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.
[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1 A schematic diagram of a structure provided in Embodiment 1 of the bidirectional switching semiconductor packaged device of this application;
[0025] Figure 2 This is another structural schematic diagram provided for Embodiment 1 of the bidirectional switching semiconductor packaged device of this application;
[0026] Figure 3 An equivalent circuit structure diagram is provided for Embodiment 1 of the bidirectional switching semiconductor packaged device of this application;
[0027] Figure 4 This is a schematic diagram of the structure of the AC / DC converter embodiment 1 of this application.
[0028] The purpose, features, and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0029] It should be understood that the specific embodiments described herein are merely illustrative of the technical solutions of this application and are not intended to limit this application.
[0030] To better understand the technical solution of this application, a detailed description will be provided below in conjunction with the accompanying drawings and specific implementation methods.
[0031] This application presents a bidirectional switching semiconductor packaged device according to a first embodiment. Please refer to... Figure 1 , Figure 2 as well as Figure 3 The bidirectional switching semiconductor packaged device includes: a first switching chip 10, a second switching chip 20, a plastic encapsulation housing 30, and a heat dissipation substrate 40;
[0032] The first switch chip 10 and the second switch chip 20 are isolated on one side of the heat dissipation substrate 40, and the drain / source of the first switch chip 10 and the corresponding drain / source of the second switch chip 20 are electrically connected through the heat dissipation substrate 40.
[0033] The heat dissipation substrate 40 is encapsulated within the plastic encapsulation housing 30, and one side of the heat dissipation substrate 40 where the first switch chip 10 and the second switch chip 20 are disposed is covered by the plastic encapsulation housing 30, while at least a portion of the other side of the heat dissipation substrate 40 is not covered by the plastic encapsulation housing 30.
[0034] A set of pins 50 is provided on each side of the plastic encapsulation housing 30. One end of the pin is encapsulated in the plastic encapsulation housing 30 and electrically connected to any electrode of the first switch chip 10 or the second switch chip 20. The other end of the pin protrudes out of the plastic encapsulation housing 30.
[0035] The plastic-encapsulated housing 30 has one side of the heat dissipation substrate 40. A creepage path extension portion 31 is formed between the heat dissipation substrate 40 and any set of pins 50 to increase the creepage distance between the pins and the heat dissipation substrate 40, so that the creepage distance is greater than the shortest spatial distance between the two.
[0036] It should be understood that, in this embodiment, the first switch chip 10 refers to a wafer with switch control function, which has a gate, a source, and a drain. The gate is a control terminal used to control the on / off state of the current transmission channel between the source and drain. By adjusting the magnitude of the voltage or current received at the gate, the magnitude of the voltage or current transmitted between the source and drain can be controlled, thereby controlling the power output. The function and structure of the second switch chip 20 are basically the same as those of the first switch chip 10, and will not be described in detail here.
[0037] It should be noted that the molding shell 30 refers to a skeleton structure formed of an insulating material that is resistant to high temperatures and corrosion, has thermoplasticity, and is chemically stable. It is used to encapsulate microcircuit structures such as chips, protecting internal electrical connections and providing heat dissipation. It is typically made of epoxy molding compound (EMC). In this embodiment, the molding shell 30 can constitute the encapsulation shell of a bidirectional switching semiconductor device. To enable electrical connection between the microcircuit structures (first switch chip 10 and second switch chip 20) inside the encapsulation shell and the outside, several pins are typically provided at each end of the encapsulation shell. The molding shell 30 can encapsulate one end of each pin, allowing the other end of each hardware component to protrude outside the molding shell 30. Through these pins, an electrical connection can be established between the inside and outside of the molding shell 30.
[0038] It is easy to understand that the heat dissipation substrate 40 can be a substrate structure made of a metal material with excellent heat dissipation and conductivity properties. Typically, devices that need heat dissipation can be placed on the heat dissipation substrate 40, which provides them with excellent heat dissipation.
[0039] In this embodiment, please refer to Figure 1 The first switch chip 10 and the second switch chip 20 can be simultaneously disposed on one side of the heat dissipation substrate 40. The side of the heat dissipation substrate 40 on which the first switch chip 10 and the second switch chip 20 are disposed is covered by the plastic encapsulation shell 30, while at least a part of the other side of the heat dissipation substrate 40 is not covered by the plastic encapsulation shell 30 (not shown in the figure). In this way, the plastic encapsulation shell 30 can physically protect the overall structure formed by the first switch chip 10, the second switch chip 20 and the heat dissipation substrate 40.
[0040] It should be noted that, please refer to... Figure 3 To understand ( Figure 3 (Only the equivalent circuit of the common-drain bidirectional switch structure is shown.) The drains of the first switch chip 10 and the second switch chip 20 are respectively connected to the heat sink substrate 40. Since the heat sink substrate 40 also has excellent conductivity, the sources of the first switch chip 10 and the second switch chip 20 can be electrically connected through the heat sink substrate 40 to form a common-source bidirectional switch structure, or the drains of the first switch chip 10 and the second switch chip 20 can be electrically connected through the heat sink substrate to form a common-drain bidirectional switch structure. When the above-mentioned common-drain or common-source bidirectional switch structure enters the off state, the first switch chip 10 and the second switch chip 20 respectively cut off two current transmission channels in opposite directions, greatly reducing the leakage current transmitted in both directions when the bidirectional switch semiconductor package device is turned off. The situation for the common-source structure is similar to that described above and will not be repeated here.
[0041] It is easy to understand that since the first switch chip 10 and the second switch chip 20 can be cooled by the same heat dissipation substrate 40, and the heat dissipation substrate 40 can also serve as an electrical connection conductor between the two, the volume of the overall structure composed of the heat dissipation substrate 40, the first switch chip 10, and the second switch chip 20 can be greatly reduced, and the volume of the plastic package 30 is also greatly reduced. However, the reduction in the volume of the plastic package 30 may lead to the creepage distance between each pin and the internal heat dissipation substrate 40 being too small, which may easily cause insulation safety problems. To address the above problem, in this embodiment, a creepage path extension portion 31 is provided on the surface of the plastic package 30 between the heat dissipation substrate 40 and any set of pins 50 to increase the creepage distance between the corresponding pin and the heat dissipation substrate 40. The creepage path extension portion 31 makes the creepage distance between each pin and the heat dissipation substrate 40 greater than the shortest spatial distance (i.e., the straight-line distance in space) between them, thereby ensuring that the package volume of the bidirectional switching semiconductor package device is kept as small as possible, while also preventing insulation safety problems caused by the excessively small package volume.
[0042] Furthermore, in this embodiment, the creepage path extension 31 is at least one groove formed on the surface of the plastic encapsulation housing 30, and at least one of the grooves is located between the heat dissipation substrate 40 and any set of the pins.
[0043] It should be noted that, in this embodiment, the creepage path extension 31 can specifically be a groove-shaped structure disposed on the surface of the plastic encapsulation housing 30, positioned between each pin and the heat sink substrate 40, and its number is not specifically limited. In specific implementations, the creepage distance between the heat sink substrate 40 and the corresponding pin can be adjusted by adjusting the depth and width of the groove.
[0044] Furthermore, in this embodiment, the cross-section of the groove is either a semi-circle or a polygon.
[0045] It should be noted that, in this embodiment, the cross-sectional shape of the groove can be set to a semi-circle, a rectangle, or other polygons. In specific implementations, the creepage distance between the heat dissipation substrate 40 and the corresponding pin can also be adjusted by adjusting the cross-sectional shape (side length) of the groove.
[0046] Furthermore, in this embodiment, the drain, source, and gate of the first switch chip 10 are respectively connected to the first drain pin, the first source pin, and the first gate pin in one of the sets of pins 50;
[0047] The drain, source, and gate of the second switch chip 20 are respectively connected to the second drain pin, the second source pin, and the second gate pin in another set of pins 50.
[0048] The first gate pin and the second gate pin are arranged opposite each other on both sides of the plastic encapsulation housing, and are located at either end of the plastic encapsulation housing or adjacent to either end of the plastic encapsulation housing.
[0049] It should be noted that, in this embodiment, as Figure 1 As shown, the plastic encapsulation housing 30 can be a three-dimensional structure with a rectangular shape on the horizontal plane. Two sets of pins 50 are provided on both sides of the plastic encapsulation housing 30. One set of pins 50 on one side includes a first drain pin for connecting to the drain of the first switch chip 10, a first source pin for connecting to the source of the first switch chip 10, and a first gate pin for connecting to the gate of the first switch chip 10. On the other side of the plastic encapsulation housing 30, a set of pins 50 includes a second drain pin for connecting to the drain of the second switch chip 20, a second source pin for connecting to the source of the second switch chip 20, and a second gate pin for connecting to the gate of the second switch chip 20.
[0050] It is easy to understand that, Figure 2The specific settings of the two sets of pins 50 not shown in the plastic-encapsulated housing are available for reference. Figure 1 In this embodiment, the pins connected to the first switch chip 10 and the second switch chip 20 can be divided into two groups of pins 50. For example... Figure 1 The corresponding set of pins 50 on the left side can be seen to actually consist of three parts. One pin connected by a thicker metal wire can be understood as the drain pin. The other two parts are the source pin and the gate pin, respectively. The two pins located on the outermost sides of the plastic package 50 (located at the two corners of the plastic package 50) can be considered as the first gate pin and the second gate pin, respectively. They are arranged opposite each other and located on the same side or adjacent side of the plastic package 50, which facilitates subsequent routing on the circuit board.
[0051] Furthermore, in this embodiment, each electrode of the first switch chip 10 and the second switch chip 20 is electrically connected to its corresponding pin through a metal conductor.
[0052] It should be noted that, in this embodiment, the source, drain, and gate of the first switch chip 10 are electrically connected to the first source pin, the first drain pin, and the first gate pin respectively through corresponding metal conductors, thereby establishing an electrical connection between this set of pins 50 and the first switch chip 10. Similarly, the source, drain, and gate of the second switch chip 20 are also electrically connected to the second source pin, the second drain pin, and the second gate pin respectively through corresponding metal conductors, thereby establishing an electrical connection between another set of pins 50 and the second switch chip 20.
[0053] It is worth noting that, in this embodiment, the specific form of the metal conductor can be any of the following: linear, strip, or ribbon-like, i.e., any of the following: metal wire or metal solder ribbon. If it is linear, it can be formed by bonding a metal wire between the corresponding pin and the corresponding electrode on the corresponding switch chip using a wire bonding (WB) process. If it is strip or strip-like, it can be formed by soldering a solder rod or solder ribbon of the corresponding metal material between the corresponding pin and the corresponding electrode on the corresponding switch chip using a soldering process. As a preferred embodiment, the material of the metal conductor can be any of the following metals with excellent conductivity: copper, silver, gold, etc.
[0054] Furthermore, in this embodiment, any set of pins 50 has a bent portion at one end protruding from the plastic encapsulation housing 30, and the bending direction of the bent portion is toward the side of the plastic encapsulation housing 30 on which the heat dissipation substrate 40 is disposed; or, the bending direction of the bent portion is away from the side of the plastic encapsulation housing 30 on which the heat dissipation substrate 40 is disposed.
[0055] It should be noted that in this embodiment, any set of pins 50 has a bent portion at the end protruding from the plastic casing 30, such as... Figure 1 As shown, the bending direction of the bent portion can be towards the side of the plastic-encapsulated housing 30 where the heat dissipation substrate 40 is located; or as shown... Figure 2 As shown, the bending direction of the bent portion can also be opposite to the side of the plastic-encapsulated housing 30 where the heat dissipation substrate 40 is located. These two different configurations can be selected according to different mounting space requirements.
[0056] Furthermore, in this embodiment, the first switch chip 10 and the second switch chip 20 are both N-type switch chips or both P-type switch chips.
[0057] It should be noted that an N-type switch chip is a semiconductor switch chip that turns on when a high voltage is received at the gate and turns off when a low voltage is received at the gate. Correspondingly, a P-type switch chip is a semiconductor switch chip that turns on when a low voltage is received at the gate and turns off when a high voltage is received at the gate. In this embodiment, the control logic of the first switch chip 10 and the second switch chip 20 can be designed to be the same, so that the first switch chip 10 and the second switch chip 20 can be controlled to synchronously switch on and off states through the same set of high-level or low-level control signals. That is, the first switch chip 10 and the second switch chip 20 can both be N-type switch chips or both be P-type switch chips.
[0058] Furthermore, in this embodiment, the first switch chip 10 and the second switch chip 20 are any one of SiC semiconductor, GaN semiconductor and MOSFET semiconductor.
[0059] It should be noted that, in this embodiment, the first switch chip 10 and the second switch chip 20 can be made of the same material, specifically, they can be any one of SiC semiconductors made of SiC material, GaN semiconductors made of GaN material, and MOSFET semiconductors made of metal oxide material. SiC semiconductors are suitable for high-power, high-voltage applications, GaN semiconductors are suitable for high-power-density, high-bandgap, and high-frequency applications, while MOSFET semiconductors are suitable for conventional electrical applications.
[0060] This application provides a bidirectional switching semiconductor package device, comprising: a first switching chip, a second switching chip, a plastic encapsulation housing, and a heat dissipation substrate. In this bidirectional switching semiconductor package device, the drain or source of the first switching chip and the corresponding drain or source of the second switching chip are electrically connected through the same heat dissipation substrate, forming a common-drain or common-source bidirectional switching structure. Furthermore, a single heat dissipation substrate can simultaneously dissipate heat from both switching chips. Simultaneously, on the surface of the plastic encapsulation housing, a creepage path extension is provided between the heat dissipation substrate and any set of pins located on either side of the plastic encapsulation housing to increase the creepage distance. This structure allows the package size of the bidirectional switching semiconductor package device to be kept as small as possible, while preventing problems related to power output control, heat dissipation, and electrical safety caused by excessively small package size.
[0061] Furthermore, this application also proposes an AC / DC converter, please refer to... Figure 4 The AC / DC converter includes: a transformer T, an AC / AC circuit Br1 electrically connected to the primary side of the transformer T, and an AC / DC circuit Br2 disposed on the secondary side of the transformer T and electrically connected to the secondary side of the transformer T.
[0062] The AC / AC circuit Br1 includes several bidirectional switches 100, which employ bidirectional switch semiconductor packaging devices as described above.
[0063] It should be noted that, in this embodiment, the three-phase power supply Us can be a motor device driven by three-phase AC power, specifically a drive motor of an electric vehicle; the DC load Load can be a battery that outputs DC power and can be charged by DC power, specifically a power battery of an electric vehicle.
[0064] In one specific scenario, when the electric vehicle is moving normally, the battery can provide DC power. The converter proposed in this embodiment can convert the DC power into three-phase AC power with high conversion efficiency and transmit the three-phase AC power to the motor to drive the electrode device to continuously provide power to the electric vehicle. In this case, the motor device can be regarded as an AC load driven by three-phase AC power, while the battery can be regarded as a DC power source providing DC power.
[0065] In another specific scenario, when an electric vehicle brakes, the current kinetic energy of the motor can be converted into electrical energy (three-phase alternating current). Using the converter proposed in this embodiment, the three-phase alternating current is then converted into direct current (DC), and the converted DC is transmitted to the battery for charging, thereby improving the battery's range. In this case, the motor can be considered a power source that generates three-phase alternating current, while the battery can be considered a load driven by DC.
[0066] As is readily understood, in this embodiment, the converter is constructed from an AC / AC circuit Br1, a transformer T, and an AC / DC circuit Br2. The first terminal of the AC / AC circuit Br1 is connected to the three-phase power supply Us, and the second terminal of the AC / AC circuit Br1 is connected to the primary coil of the transformer T. The secondary coil of the transformer T is connected to the AC side of the AC / DC circuit Br2, and the DC side of the AC / DC circuit Br2 is connected to the DC load Load. Based on this connection method, the AC / AC circuit Br1 can cooperate with the AC / DC circuit Br2 to control the direction of power transmission, voltage conversion, and power magnitude, converting the three-phase AC power on the three-phase power supply Us side into DC power of a specific voltage and transmitting it to the DC load Load, or converting the DC power on the DC load Load side into three-phase AC power of a specific amplitude and transmitting it to the three-phase power supply Us.
[0067] In specific implementation, please refer to Figure 4 In the AC / AC circuit Br1, at least six bidirectional switches 100 are included. Figure 4 (The controller and its connection to each bidirectional switch 100 are not shown in the diagram.) Each bidirectional switch 100 forms three sets of bridge arms. The midpoint of each set of bridge arms is the first terminal of the AC / AC circuit Br1, which is connected to the three-phase power supply Us. The upper bridge arm of each set of bridge arms is connected to the first terminal of the primary coil of transformer T through the positive terminal of the busbar, and the lower bridge arm of each set of bridge arms is connected to the first terminal of the first inductor L1 through the negative terminal of the busbar. The second terminal of the first inductor L1 is connected to the second terminal of the primary coil of transformer T. The first inductor L1 can be the magnetizing inductance of transformer T.
[0068] The AC / DC circuit Br2 includes at least four bidirectional switches 100, each forming two sets of bridge arms. The midpoint of each set of bridge arms is the AC side of the AC / DC circuit Br2, connected to the first and second terminals of the secondary winding of transformer T, respectively. The upper bridge arm of each set is connected to the first terminal of the DC load Load via the positive bus, and the lower bridge arm of each set is connected to the second terminal of the DC load Load via the negative bus. Furthermore, a bus capacitor C1 for voltage regulation is provided between the positive and negative bus terminals in the AC / DC circuit Br2.
[0069] With the above specific structure, the direction of power transmission between the three-phase power supply Us and the DC load Load, the phase difference between current and voltage (power factor), and the voltage across the converter can be adjusted by controlling the on / off state of each bidirectional switch 100 in the AC / AC circuit Br1 and the AC / DC circuit Br2.
[0070] It is easy to understand that in this embodiment, each bidirectional switch 100 used to construct the AC / AC circuit Br1 or the AC / DC circuit Br2 can be a bidirectional switch semiconductor packaged device as described in the above embodiment. Therefore, while ensuring that the function of the converter is not affected, the physical volume of each bidirectional switch 100 can be made as small as possible, which in turn indirectly makes the overall volume of the entire converter as small as possible.
[0071] This application provides an AC / DC converter, comprising: a transformer; an AC / AC circuit electrically connected to the primary side of the transformer; and an AC / DC circuit disposed on and electrically connected to the secondary side of the transformer. The AC / AC circuit includes a plurality of bidirectional switches, which employ bidirectional switch semiconductor packaged devices as described above. Therefore, the AC / DC converter proposed in this application should possess at least all the technical features of all embodiments of the bidirectional switch semiconductor packaged devices described above, and thus should also possess all the beneficial effects brought about by all embodiments of the bidirectional switch semiconductor packaged devices described above, which will not be elaborated further here.
[0072] Furthermore, this application also provides a vehicle that employs the AC / DC converter described above. Therefore, the vehicle proposed in this application should also possess at least all the technical features of all embodiments of the AC / DC converter described above, and thus should also possess all the beneficial effects brought about by all embodiments of the AC / DC converter described above, which will not be elaborated upon here.
[0073] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent scope of this application.
Claims
1. A bidirectional switching semiconductor packaged device, characterized in that, The bidirectional switching semiconductor packaged device includes: a first switching chip, a second switching chip, a plastic encapsulation housing, and a heat dissipation substrate; The first switch chip and the second switch chip are isolated on one side of the heat dissipation substrate, and the drain / source of the first switch chip and the corresponding drain / source of the second switch chip are electrically connected through the heat dissipation substrate. The heat dissipation substrate is encapsulated in the plastic encapsulation housing, and one side of the heat dissipation substrate where the first switch chip and the second switch chip are disposed is covered by the plastic encapsulation housing, while at least a portion of the other side of the heat dissipation substrate is not covered by the plastic encapsulation housing; A set of pins is provided on each side of the plastic encapsulation housing. One end of the pin is encapsulated in the plastic encapsulation housing and electrically connected to any electrode of the first switch chip or the second switch chip. The other end of the pin protrudes out of the plastic encapsulation housing. The plastic-encapsulated housing has one side with the heat dissipation substrate, and a creepage path extension is formed between the heat dissipation substrate and any set of pins to increase the creepage distance between the pins and the heat dissipation substrate, so that the creepage distance is greater than the shortest spatial distance between the two.
2. The bidirectional switching semiconductor packaged device as described in claim 1, characterized in that, The creepage path extension is at least one groove formed on the surface of the plastic-encapsulated housing, and at least one of the grooves is located between the heat dissipation substrate and any set of the pins.
3. The bidirectional switching semiconductor packaged device as described in claim 2, characterized in that, The cross-section of the groove can be either a semi-circle or a polygon.
4. The bidirectional switching semiconductor packaged device as described in claim 2, characterized in that, When at least two grooves are formed on the surface of the plastic-encapsulated housing, the cross-sectional area of the at least two grooves is either a semicircle or a polygon; or, the cross-sectional area of the at least two grooves is a combination of at least two shapes, either a polygon or a semicircle.
5. The bidirectional switching semiconductor packaged device according to any one of claims 1-4, characterized in that, The drain, source, and gate of the first switching chip are respectively connected to the first drain pin, the first source pin, and the first gate pin in one of the sets of pins; The drain, source, and gate of the second switching chip are respectively connected to the second drain pin, the second source pin, and the second gate pin in another set of pins; The first gate pin and the second gate pin are arranged opposite each other on both sides of the plastic encapsulation housing, and are located at either end of the plastic encapsulation housing or adjacent to either end of the plastic encapsulation housing.
6. The bidirectional switching semiconductor packaged device according to any one of claims 1-4, characterized in that, The electrodes of the first switch chip and the second switch chip are electrically connected to their respective pins via metal wires or metal solder strips.
7. The bidirectional switching semiconductor packaged device according to any one of claims 1-4, characterized in that, Each set of pins has a bent portion at one end protruding from the plastic encapsulation housing, the bending direction of the bent portion facing the side of the plastic encapsulation housing where the heat dissipation substrate is disposed; or, the bending direction of the bent portion is away from the side of the plastic encapsulation housing where the heat dissipation substrate is disposed.
8. An AC / DC converter, characterized in that, The AC / DC converter includes: a transformer, an AC / AC circuit electrically connected to the primary side of the transformer, and an AC / DC circuit disposed on and electrically connected to the secondary side of the transformer. The AC / AC circuit includes several bidirectional switches, and the bidirectional switches are bidirectional switch semiconductor packaged devices as described in any one of claims 1-7.
9. A car, characterized in that, The vehicle's on-board charger uses the AC / DC converter as described in claim 8.