Nondestructive and pollution-free silicon carbide particle mixing device

Abstract

The utility model discloses a lossless and pollution-free silicon carbide particle mixing device and relates to the technical field of silicon carbide crystals. Comprising a magnetic oscillator, a mixing grid plate, a base and a cylindrical side wall with upper and lower openings, the base is adsorbed on the magnetic oscillator; the multiple cylindrical side walls are sequentially stacked on the base from bottom to top, and the cylindrical side walls are detachably connected with the base and detachably connected with the base. A material mixing grid plate is placed at the insertion port of each cylindrical side wall, a gap exists at the joint of every two adjacent cylindrical side walls, and SiC powder and a doping agent are placed on the material mixing grid plates; the particle size of the SiC powder and the particle size of the doping agent are both larger than the mesh aperture of the mixed material mesh plate; the silicon carbide powder mixing device can realize lossless, efficient and pollution-free mixing of silicon carbide powder, and improves the consistency of substrates.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide crystal technology, specifically to a non-destructive and pollution-free silicon carbide particle mixing device. Background Technology

[0002] SiC (Silicon Carbide) materials possess characteristics such as a large bandgap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, making them ideal materials for fabricating high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting, and optoelectronic integrated devices. Large-particle, high-purity SiC powder is a key raw material for SiC single crystal growth, and its mixing uniformity with dopants plays a crucial role in the crystallization quality of SiC crystals: If the powder particle size is too small, it easily floats with the airflow in the growth cavity, generating inclusion defects in the crystal; low powder purity leads to the introduction of numerous deep-level defects into the substrate, causing device leakage; low mixing uniformity between the powder and dopants easily results in uneven decomposition of the dopant at different stages of crystal growth, causing excessive P or N at different growth stages. Therefore, SiC powder with controllable particle size, purity, and uniform mixing with dopants is needed to meet the requirements of SiC single crystal growth, thereby improving the quality of SiC single crystal growth.

[0003] High-purity semi-insulating SiC materials required for the fabrication of radio frequency devices often compensate for the small amount of nitrogen in the background through appropriate P-type doping. However, existing powder mixing devices use mechanical stirring to mix the powder evenly. During the mixing process, the powder particles are broken by the impact of the robotic arm, resulting in smaller particle sizes. Furthermore, the robotic arm and mixing chamber are mostly made of metal, which leads to an increase in the concentration of metal impurities in the powder during the mixing process. Manual mixing is inefficient and produces poor mixing results.

[0004] Therefore, there is an urgent need for a mixing device for silicon carbide powder to achieve non-destructive, efficient, and pollution-free mixing of silicon carbide powder and improve the consistency of the substrate. Utility Model Content

[0005] This invention overcomes the shortcomings of the prior art and proposes a non-destructive and pollution-free silicon carbide particle mixing device; the purpose is to achieve non-destructive, efficient and pollution-free mixing of silicon carbide powder and improve the consistency of the substrate.

[0006] This utility model is achieved through the following technical solution:

[0007] A non-destructive and pollution-free silicon carbide particle mixing device includes a magnetic oscillator, a mixing grid plate, a base, and cylindrical sidewalls with open top and bottom. The base is adsorbed onto the magnetic oscillator. Multiple cylindrical sidewalls are stacked on the base from bottom to top, and the cylindrical sidewalls and the base form a mixing cavity. The upper and lower end faces of the cylindrical sidewalls are provided with stepped insertion interfaces. The cylindrical sidewalls are detachably connected to the base and to the base through the insertion interfaces.

[0008] A mixing grid plate is placed at the insertion port of each cylindrical sidewall. A gap exists at the connection between two adjacent cylindrical sidewalls, providing space for the mixing grid plate to vibrate vertically. The mixing grid plate is used to place SiC powder and dopant; the particle size of the SiC powder and dopant is larger than the mesh aperture of the mixing grid plate.

[0009] Furthermore, a cover plate is inserted above the cylindrical sidewall at the top.

[0010] Furthermore, a low-pressure device is connected to the lowest cylindrical sidewall, and the low-pressure device is connected to a dust collection box.

[0011] Furthermore, the low-pressure device is a vacuum pump.

[0012] Furthermore, the mixing grid plate is coated with a polytetrafluoroethylene coating.

[0013] Furthermore, the inner wall of the cylindrical sidewall is coated with a polytetrafluoroethylene coating.

[0014] The beneficial effects of this utility model compared to the prior art are as follows:

[0015] 1. The cavity, mixing grid plate and other areas of the device of this utility model are all wrapped with polytetrafluoroethylene material to avoid metal contamination caused by powder contact with metal during the powder mixing process.

[0016] 2. The grid plate of this utility model can vibrate up and down under the action of a magnetic oscillator, which improves the efficiency of the powder mixing process.

[0017] 3. This utility model uses a low-pressure device and a dust collection bag, which can collect the dust generated during the powder mixing process into the dust collection bag, thereby reducing dust pollution in the air.

[0018] 4. Compared with traditional powder mixing devices, this utility model uses a mixing grid plate, which can avoid the impact of metal agitator on powder particles and reduce the destructive effect of the mixing process on the particle size of powder.

[0019] 5. Compared with traditional powder mixing devices, this utility model uses a mixing grid plate, which can avoid contamination of the powder by contact between the metal stirring paddle and the powder, and avoid the introduction of metal impurities during the powder mixing process. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of an embodiment of the present utility model;

[0021] Figure 2 This is an enlarged view of the connection between the mixing grid plate and the cylindrical sidewall in the embodiment;

[0022] Figure 3 This is a top view of the mixing grid plate in the embodiment;

[0023] Figure 4 This is a comparison chart showing the effects of manual mixing and the mixing device described in this embodiment on mixing SiC powder and dopants.

[0024] Wherein: 1 is the magnetic oscillator, 2 is the mixing grid plate, 3 is the base, 4 is the cylindrical sidewall, 5 is the insertion interface, 6 is the gap, 7 is the cover plate, 8 is the dust collection box, and 9 is the vacuum pump. Detailed Implementation

[0025] To make the technical problem to be solved, the technical solution, and the beneficial effects of this utility model clearer, this utility model will be further described in detail with reference to the embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of this utility model and are not intended to limit it. The technical solution of this utility model will be described in detail below with reference to the embodiments and accompanying drawings, but the scope of protection is not limited thereto.

[0026] See Figures 1 to 3 This embodiment proposes a non-destructive and pollution-free silicon carbide particle mixing device, including a magnetic oscillator 1, a mixing grid plate 2, a base 3, and cylindrical sidewalls 4 with open top and bottom. The base 3 is made of magnetic material and is adsorbed onto the magnetic oscillator 1. Four cylindrical sidewalls 4 are stacked on the base from bottom to top, forming a mixing cavity with the base 3. Each cylindrical sidewall 4 has an insertion interface 5 on its upper end face and an insertion block that mates with the insertion interface 5 on its lower end face. Adjacent cylindrical sidewalls 4 are detachably connected through the insertion interface 5 and the insertion block. The base 3 also has an insertion interface 5 on its edge, and the bottommost cylindrical sidewall 4 is connected to the insertion interface 5 on the base 3 through the insertion block at its bottom. The insertion connection allows for rapid assembly and disassembly of the mixing cavity and facilitates the placement of the mixing grid plate 2 and the loading and unloading of materials into the mixing cavity.

[0027] In this embodiment, the insertion interface 5 has a stepped structure. A mixing grid plate 2 is placed at the insertion interface 5 of each cylindrical sidewall 4. The mixing grid plate 2 is limited by the upper and lower cylindrical sidewalls 4. There is a gap 6 at the connection between two adjacent cylindrical sidewalls 4, which provides space for the vertical vibration of the mixing grid plate 2. SiC powder and dopant are placed on the mixing grid plate 2. The particle size of the SiC powder and dopant is larger than the mesh aperture of the mixing grid plate 2. The SiC powder and dopant to be mixed are placed directly on the mixing grid plate 2. The magnetic oscillator 1 drives the mixing grid plates 2 of each layer to vibrate vertically. During the vibration, the SiC powder and dopant are mixed, and fine impurities are filtered out at the same time.

[0028] To improve the sealing performance of the device, a cover plate 7 is inserted above the top cylindrical sidewall 4. The cover plate 7 is also inserted into the top cylindrical sidewall 4.

[0029] In this embodiment, the mixing grid plate 2 and the inner wall of the cylindrical sidewall 4 are coated with a polytetrafluoroethylene coating to avoid metal contamination caused by the SiC powder and dopant coming into contact with the metal during the mixing process.

[0030] In this embodiment, a vacuum pump 9 is connected to the lowermost cylindrical sidewall 4, and the vacuum pump is connected to a dust collection box 8. Dust generated during the mixing of SiC powder and dopants can be collected in the dust collection box 8, reducing airborne dust pollution.

[0031] Figure 4 The figure shows a comparison of the mixing effects of manual mixing and the mixing device described in this embodiment on SiC powder and dopants. As can be seen from the figure, the mixing effect of the mixing device described in this embodiment is higher than that of manual mixing and existing mixing devices, which are mechanical stirring mixers.

[0032] The above description is a further detailed explanation of the present invention in conjunction with specific preferred embodiments. It should not be considered that the specific embodiments of the present invention are limited to this. For those skilled in the art, several simple deductions or substitutions can be made without departing from the present invention, and all such deductions or substitutions should be considered to fall within the scope of patent protection determined by the submitted claims.

Claims

1. A non-destructive and pollution-free silicon carbide particle mixing device, characterized in that, It includes a magnetic oscillator (1), a mixing grid plate (2), a base (3), and cylindrical sidewalls (4) with open top and bottom; the base (3) is attached to the magnetic oscillator (1); multiple cylindrical sidewalls (4) are stacked on the base from bottom to top, and the cylindrical sidewalls (4) and the base (3) form a mixing cavity; the upper end face of each cylindrical sidewall (4) is provided with an insertion interface (5), and the lower end face of each cylindrical sidewall (4) is provided with a plug-in block that cooperates with the insertion interface (5); the cylindrical sidewalls (4) are detachably connected to the base (3) and the cylindrical sidewalls (4) through the insertion interface (5) and the plug-in block; A mixing grid plate (2) is placed at the insertion port (5) of each cylindrical sidewall (4), and there is a gap (6) at the connection between two adjacent cylindrical sidewalls (4), which provides space for the up and down vibration of the mixing grid plate (2); The mixing grid plate (2) is used to place SiC powder and dopants; the particle size of the SiC powder and dopants is larger than the mesh aperture of the mixing grid plate (2).

2. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 1, characterized in that, A cover plate (7) is inserted above the cylindrical sidewall (4) at the top.

3. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 1, characterized in that, The lowest cylindrical sidewall (4) is connected to a low-pressure device, which is connected to a dust collection box (8).

4. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 3, characterized in that, The low-pressure device is a vacuum pump (9).

5. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 1, characterized in that, The mixing grid plate (2) is coated with polytetrafluoroethylene.

6. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 5, characterized in that, The inner wall of the cylindrical sidewall (4) is coated with polytetrafluoroethylene.

7. The non-destructive and pollution-free silicon carbide particle mixing device according to claim 1, characterized in that, The insertion interface (5) has a stepped structure.

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