Power semiconductor modules and their driving circuits, electronic devices
By setting up parallel power semiconductor device groups and independent control signal pins in the power semiconductor module, the problems of thermal effects and current imbalance in a single half-bridge circuit design in high-power systems are solved, achieving efficient heat dissipation and current balancing, and improving the reliability and stability of the module.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN SANRISE TECH CO LTD
- Filing Date
- 2025-05-28
- Publication Date
- 2026-05-26
AI Technical Summary
In the existing technology, the power semiconductor module designed with a single half-bridge circuit is difficult to meet the ever-increasing demand of high-power systems, and generates significant thermal effects under high-power operating conditions, causing the chip temperature to rise sharply, which in turn leads to device performance degradation or even permanent damage.
The design employs parallel power semiconductor device groups and independent control signal pins. By setting parallel power semiconductor device groups on the substrate for current shunting, the power capacity and heat dissipation efficiency of the system are improved. Each power semiconductor device is individually controlled through independent control signal pins to ensure current balance and avoid circuit oscillation.
This improves the module's current carrying capacity and heat dissipation efficiency, reduces thermal stress, enhances the system's reliability and stability, avoids device damage, and improves the module's reliability and lifespan.
Smart Images
Figure CN224289596U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a power semiconductor module and its driving circuit and electronic equipment. Background Technology
[0002] As a core component of modern power electronics technology, power semiconductor devices are finding increasingly diverse applications. Among these, power semiconductor modules are high-performance devices that integrate and package multiple power semiconductor devices through a specific circuit topology. With the rapid development of the electric vehicle industry and the continuous upgrading of onboard power grid systems, the application scope of power semiconductor modules is expanding, leading to significant market demand growth.
[0003] However, in practical applications, power semiconductor modules designed with a single half-bridge circuit have relatively limited current carrying capacity and power handling capabilities, making it difficult to meet the ever-increasing demands of high-power systems. Furthermore, under high-power operating conditions, a single half-bridge circuit generates significant thermal effects, especially in high-frequency switching modes, which can cause a sharp rise in chip temperature, leading to device performance degradation or even permanent damage. Utility Model Content
[0004] In view of this, the present application provides a power semiconductor module and its driving circuit and electronic device, which can effectively solve the problems that the power semiconductor module with a single half-bridge circuit design in the prior art is difficult to meet the ever-increasing demand of high-power systems, and will generate significant thermal effects, causing the chip temperature to rise sharply, thereby causing device performance degradation or even permanent damage.
[0005] In a first aspect, embodiments of this application provide a power semiconductor module, the power semiconductor module including at least two groups of power semiconductor devices, a substrate and a plurality of control signal pins;
[0006] Each of the power semiconductor device groups includes two power semiconductor devices for forming a bridge arm structure, and the power semiconductor device groups are connected in parallel;
[0007] Each of the power semiconductor devices is disposed on the substrate;
[0008] Each of the power semiconductor devices has its control terminal connected to a corresponding control signal pin.
[0009] In some embodiments, each of the power semiconductor devices is mounted on the substrate.
[0010] In some embodiments, the power semiconductor module further includes a plurality of power transmission pins;
[0011] The output terminals of each of the power semiconductor device groups are interconnected to serve as the module output terminal, the positive input terminals of each of the power semiconductor device groups are interconnected to serve as the module positive input terminal, and the negative input terminals of each of the power semiconductor device groups are interconnected to serve as the module negative input terminal.
[0012] Each of the power transmission pins is respectively connected to the positive input terminal of the module, the negative input terminal of the module, and the output terminal of the module.
[0013] In some embodiments, each of the power transmission pins is disposed on a first side of the substrate, and each of the control signal pins is disposed on a second side of the substrate, with the first side and the second side being disposed opposite to each other.
[0014] In some embodiments, the power semiconductor module further includes at least one temperature detection pin for connecting a temperature detection element to detect the temperature of the power semiconductor module.
[0015] In some embodiments, the temperature sensing element is disposed on the substrate and electrically connected to the corresponding temperature sensing pin.
[0016] In a second aspect, the present invention provides a driving circuit for a power semiconductor module. The driving circuit for the power semiconductor module is applied to at least one power semiconductor module as described in the first aspect above. The driving circuit includes: a plurality of control signal generation modules equal in number to the power semiconductor devices of the power semiconductor module.
[0017] Each of the power semiconductor devices has its control terminal connected to a control signal generation module via a control signal pin.
[0018] Each of the power semiconductor devices is driven independently by its corresponding control signal generation module.
[0019] In some embodiments, the driving circuit of the power semiconductor module further includes a current detection module, which is electrically connected to the power semiconductor module and is used to detect the current of the power semiconductor module in real time.
[0020] In some embodiments, the driving circuit of the power semiconductor module further includes two power signal generation modules;
[0021] The first power signal generation module is used to be electrically connected to the first power semiconductor device of each of the power semiconductor device groups, and to provide a power signal to each of the first power semiconductor devices;
[0022] The second power signal generation module is electrically connected to the second power semiconductor device of each of the power semiconductor device groups to provide a power signal to each of the second power semiconductor devices.
[0023] Thirdly, the present invention provides an electronic device, the electronic device comprising: at least one power semiconductor module as described in the first aspect or a driving circuit for at least one power semiconductor module as described in the second aspect.
[0024] The embodiments of this application have the following beneficial effects:
[0025] The power semiconductor module of this application includes at least two groups of power semiconductor devices, a substrate, and multiple control signal pins. Each power semiconductor device group includes two power semiconductor devices forming a bridge arm structure, and the power semiconductor device groups are connected in parallel. Each power semiconductor device is mounted on the substrate. The control terminal of each power semiconductor device is connected to a corresponding control signal pin. By using parallel power semiconductor device groups in the power semiconductor module for current shunting, the power capacity of the system is greatly improved, while heat is distributed, thermal stress is reduced, and heat dissipation efficiency is improved. Furthermore, by connecting the control terminals of each power semiconductor device to the control signal pins, individual control of each power semiconductor device is achieved, ensuring current balance among the parallel power semiconductor device groups, avoiding circuit oscillation, and greatly improving the reliability of the module. Attached Figure Description
[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 A first circuit diagram of a power semiconductor module according to an embodiment of this application is shown;
[0028] Figure 2 A first package schematic diagram of a power semiconductor module according to an embodiment of this application is shown;
[0029] Figure 3 A second circuit diagram of a power semiconductor module according to an embodiment of this application is shown;
[0030] Figure 4 A first layout schematic diagram of a power semiconductor module according to an embodiment of this application is shown;
[0031] Figure 5A first structural schematic diagram of the driving circuit of the power semiconductor module according to an embodiment of this application is shown;
[0032] Figure 6 A second structural schematic diagram of the driving circuit of the power semiconductor module according to an embodiment of this application is shown.
[0033] Explanation of key component symbols: 11: Temperature detection element; 12: Control signal generation module; 13: Current detection module; 131: Current sensor; 14: First power signal generation module; 15: Second power signal generation module. Detailed Implementation
[0034] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.
[0035] The components of the embodiments of this application described and illustrated in the accompanying drawings can be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of this application provided in the drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0036] In the following text, the terms "comprising," "having," and their cognates, which may be used in various embodiments of this application, are intended only to indicate a particular feature, number, step, operation, element, component, or combination thereof, and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, or adding the possibility of one or more combinations thereof. Furthermore, the terms "first," "second," "third," etc., are used only for distinguishing descriptions and should not be construed as indicating or implying relative importance.
[0037] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this application pertain. Terms (such as those defined in commonly used dictionaries) shall be interpreted as having the same meaning as in their contextual meaning in the relevant technical field and shall not be construed as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this application.
[0038] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0039] Considering that existing power semiconductor modules with single half-bridge circuit designs are insufficient to meet the ever-increasing demands of high-power systems and generate significant thermal effects, leading to a sharp rise in chip temperature, resulting in device performance degradation and even permanent damage, this application provides a power semiconductor module and its driving circuit and electronic equipment. By setting up parallel power semiconductor device groups in the power semiconductor module for current shunting, the system's power capacity is greatly improved, while heat is dispersed, thermal stress is reduced, and heat dissipation efficiency is improved. Furthermore, by connecting the control terminals of each power semiconductor device to control signal pins, individual control of each power semiconductor device is achieved, ensuring current balance among the parallel power semiconductor device groups, avoiding circuit oscillation, and greatly improving the module's reliability.
[0040] The power semiconductor module will be described below with reference to some specific embodiments.
[0041] The embodiments of this application do not specifically limit the specific application scenarios of the power semiconductor module. For example, it can be applied to power systems, such as photovoltaic power generation systems, wind power systems, computer power supplies, or energy storage systems; it can also be applied to electric vehicles, such as on-board chargers and inverters; it can also be used in industrial control fields such as motor drives and power conversion; and it can also be used in household appliances.
[0042] Furthermore, this application does not specifically limit the number of power semiconductor devices included in the power semiconductor module. For example, the power semiconductor module may include two power semiconductor devices, four power semiconductor devices, or a greater number of power transistors. The number of power semiconductor devices in the power semiconductor module can be set according to the actual application scenario. For example, the power semiconductor module may include power semiconductor devices corresponding to two half-bridge circuits, or it may include power semiconductor devices corresponding to more than one half-bridge circuit. Each half-bridge circuit corresponds to at least two power semiconductor devices.
[0043] Exemplarily, the power semiconductor module includes: at least two groups of power semiconductor devices, a substrate, and multiple control signal pins. Each group of power semiconductor devices includes two power semiconductor devices for forming a bridge arm structure, with the bridge arms connected in parallel.
[0044] As an alternative solution, Figure 1 The diagram shown is a circuit schematic of a power semiconductor module. Accordingly, Figure 2 As shown Figure 1This is a schematic diagram of a power semiconductor module package. This embodiment uses two groups of power semiconductor devices as an example, where the two groups are packaged together as a single unit, forming a power semiconductor module. The two power semiconductor devices in each group form a half-bridge structure. Specifically, the first power semiconductor device group includes power semiconductor devices Q1 and Q3, and the second power semiconductor device group includes power semiconductor devices Q2 and Q4.
[0045] The drain of power semiconductor device Q1 is connected to the drain of power semiconductor device Q2, the source of power semiconductor device Q1 is connected to the drain of power semiconductor device Q3, the source of power semiconductor device Q3 is connected to the source of power semiconductor device Q4, the drain of power semiconductor device Q4 is connected to the source of power semiconductor device Q2, and the source of power semiconductor device Q1 is connected to the source of power semiconductor device Q2.
[0046] By setting up a parallel half-bridge circuit in the power semiconductor module, the current carrying capacity of the module is improved, the risk of device damage due to overcurrent is reduced, the thermal stress of the module is reduced, and the reliability of the system is enhanced.
[0047] Each power semiconductor device has its control terminal connected to a corresponding control signal pin. Specifically, the control terminal of power semiconductor device Q1 is connected to the first control signal pin P1, the control terminal of power semiconductor device Q2 is connected to the second control signal pin P2, the control terminal of power semiconductor device Q3 is connected to the third control signal pin P3, and the control terminal of power semiconductor device Q4 is connected to the fourth control signal pin P4.
[0048] The number of control signal pins can be set according to the actual application. For example, the control signal pins may also include pins connected to the source, that is, the source of power semiconductor device Q1 and power semiconductor device Q2 is connected to the fifth control signal pin P5, and the source of power semiconductor device Q3 and power semiconductor device Q4 is connected to the sixth control signal pin P6.
[0049] Furthermore, the power device can be a power device with a Kelvin source. The fifth control signal pin P5 is connected to the Kelvin sources of power semiconductor devices Q1 and Q2, and the sixth control signal pin P6 is connected to the Kelvin sources of power semiconductor devices Q3 and Q4, thereby reducing the influence of parasitic inductance on the control terminal voltage and improving the stability and reliability of the power semiconductor device at high frequencies.
[0050] That is, the switching state of power semiconductor device Q1 depends on the level of the external signal at the control terminal and source of power semiconductor device Q1. Similarly, the switching state of power semiconductor device Q2 depends on the level of the external signal at the control terminal and source of power semiconductor device Q2; the switching state of power semiconductor device Q3 depends on the level of the external signal at the control terminal and source of power semiconductor device Q3; and the switching state of power semiconductor device Q4 depends on the level of the external signal at the control terminal and source of power semiconductor device Q4.
[0051] By bringing out the control terminals of each power semiconductor device through pins, and controlling each parallel half-bridge circuit individually, the control accuracy of the module can be improved, current balance can be enhanced, more uniform current distribution can be achieved, and thermal stress and reliability issues caused by current imbalance can be reduced. This improves the stability and lifespan of the system.
[0052] The power semiconductor module includes a substrate, power semiconductor devices, and control signal pins, with each power semiconductor device disposed on the substrate. The substrate can be implemented as direct copper bonding (DBC). This application does not specifically limit the concrete implementation of the substrate; the embodiments are merely for ease of description and understanding by those skilled in the art, using a DBC substrate as an example.
[0053] Each power semiconductor device is mounted on the substrate. Specifically, each power semiconductor device adopts a surface mount design and is soldered to the substrate using adhesive materials, thereby reducing lead length, lowering parasitic inductance, and improving the module's performance in high-frequency switching scenarios.
[0054] The terminals of power semiconductor devices can be connected to the pins of the module via bonding materials, improving the reliability of electrical connections, reducing the impact of parasitic parameters on system performance, and increasing efficiency. Simultaneously, it enhances the mechanical strength of the connections and strengthens their resistance to vibration and shock.
[0055] Furthermore, the power semiconductor module also includes multiple power delivery pins. The number of power delivery pins can be set according to the actual application; exemplary, the module includes three power delivery pins.
[0056] Specifically, the output terminals of each power semiconductor device group are interconnected to form the module output terminal, the positive input terminals of each power semiconductor device group are interconnected to form the module positive input terminal, and the negative input terminals of each power semiconductor device group are interconnected to form the module negative input terminal.
[0057] Each power transmission pin is connected to the positive input terminal, negative input terminal, and output terminal of the module, respectively. Specifically, the sources of power semiconductor devices Q1 and Q2 are connected to the AC power transmission pin as the module output terminal; the drains of power semiconductor devices Q1 and Q2 are connected to the DC+ power transmission pin as the module positive input terminal; and the sources of power semiconductor devices Q3 and Q4 are connected to the DC- power transmission pin.
[0058] Taking a half-bridge circuit composed of power semiconductor devices Q1 and Q3 as an example, when power semiconductor device Q1 is turned on and power semiconductor device Q3 is turned off, the current flows through the positive input terminal of the module to the source terminal of power semiconductor device Q1 and is output from the output terminal of the module. During the process of turning off power semiconductor device Q1, since the current at the inductive load cannot change abruptly, the current flows from the negative input terminal of the module to the output terminal of the module. When power semiconductor device Q3 is turned on and power semiconductor device Q1 is turned off, the current flows through the output terminal of the module to the negative input terminal of the module. During the process of turning off power semiconductor device Q3, the current flows through the output terminal of the module to the positive input terminal of the module, thus completing the freewheeling current for the load.
[0059] The output direction of each pin can be set according to the actual application. For example, Figure 2 As shown, each power transmission pin is located on the first side of the substrate, and each control signal pin is located on the second side of the substrate. The first and second sides are arranged opposite to each other.
[0060] Furthermore, the power semiconductor module also includes at least one temperature detection pin, which is used to connect to the temperature sensing element 11 to detect the temperature of the power semiconductor module. The connection relationship between the temperature detection pin and the various power semiconductor devices in the module can be configured according to the actual application. Example: Figure 3 The diagram shows another circuit diagram of a power semiconductor module. The power semiconductor module has a temperature detection pin, which is connected to the source pin of the power semiconductor device Q3. A temperature sensing element 11 can be connected to the temperature detection pin to detect the module's temperature. Exemplarily, the temperature sensing element 11 is a negative temperature coefficient thermistor.
[0061] Understandably, the thermistor can be located within the power semiconductor module or connected to the power semiconductor module via its pins. Exemplary, Figure 4 The diagram shows a layout of a power semiconductor module. A temperature sensing element 11 is mounted on the substrate and electrically connected to a corresponding temperature sensing pin. The module's temperature is monitored via this pin to prevent thermal runaway.
[0062] This application also provides a driving circuit for a power semiconductor module, exemplary, Figure 5 The diagram shows a schematic of a driving circuit for a power semiconductor module. This driving circuit is applied to the aforementioned power semiconductor module. The driving circuit includes multiple control signal generation modules 12, the number of which is equal to the number of power semiconductor devices in the power semiconductor module. Each power semiconductor device's control terminal is connected to a corresponding control signal generation module 12 through its respective control signal pin. Each power semiconductor device is independently driven by its corresponding control signal generation module 12.
[0063] The control signal generation modules 12 can be configured according to the actual application. The structures of each control signal generation module 12 can be identical or different. Exemplarily, the control signal generation module 12 includes a controller, which generates control signals to control the power semiconductor devices. By controlling each power semiconductor device through independent control signal generation modules 12, dynamic current balance is ensured while enhancing the module's flexibility and adaptability.
[0064] Furthermore, such as Figure 6 As shown, the driving circuit of the power semiconductor module also includes a current detection module 13, which is electrically connected to the power semiconductor module and used to detect the current of the power semiconductor module in real time. The current detection module 13 can be a resistor or a current sensor 131. Exemplarily, the current detection module 13 is equipped with two current sensors 131. The current sensors 131 collect the current of each power semiconductor device group in each power semiconductor module and feed it back to the control signal generation module 12, enabling the control signal generation module 12 to adjust the control signal, further ensuring current balance and improving circuit reliability.
[0065] The driving circuit of the power semiconductor module also includes two power signal generation modules. The first power signal generation module 14 is electrically connected to the first power semiconductor device of each power semiconductor device group to provide power signals to each first power semiconductor device. The second power signal generation module 15 is electrically connected to the second power semiconductor device of each power semiconductor device group to provide power signals to each second power semiconductor device.
[0066] Understandably, control signals are used to control or regulate the operating state of various semiconductor devices, and have a relatively small voltage range. Power signals, on the other hand, refer to the large current and high voltage signals that actually flow through and are controlled by power semiconductor devices. These signals represent the energy actually transmitted to the load, realizing the conversion, distribution, or regulation of electrical energy. Control signals determine how power signals are transmitted and distributed. The synergistic effect of both enables power semiconductor devices to operate efficiently and stably in various complex scenarios.
[0067] This application also provides an electronic device, exemplary of which the aforementioned power semiconductor module is provided, or the aforementioned power semiconductor module's drive circuit is provided. Specifically, the electronic device can be any type of electronic device, such as an electric vehicle, a household appliance, or a power supply.
[0068] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that, in alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagram and / or flowchart, and combinations of blocks in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.
[0069] In addition, the functional modules or units in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.
[0070] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a smartphone, personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application.
[0071] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.
Claims
1. A power semiconductor module, characterized in that, The power semiconductor module includes at least two groups of power semiconductor devices, a substrate, and multiple control signal pins; Each of the power semiconductor device groups includes two power semiconductor devices for forming a bridge arm structure, and each of the bridge arm structures is connected in parallel; Each of the power semiconductor devices is disposed on the substrate; Each of the power semiconductor devices has its control terminal connected to a corresponding control signal pin.
2. The power semiconductor module according to claim 1, characterized in that, Each of the power semiconductor devices is mounted on the substrate.
3. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module also includes multiple power transmission pins; The output terminals of each of the power semiconductor device groups are interconnected to serve as the module output terminal, the positive input terminals of each of the power semiconductor device groups are interconnected to serve as the module positive input terminal, and the negative input terminals of each of the power semiconductor device groups are interconnected to serve as the module negative input terminal. Each of the power transmission pins is respectively connected to the positive input terminal of the module, the negative input terminal of the module, and the output terminal of the module.
4. The power semiconductor module according to claim 3, characterized in that, Each of the power transmission pins is disposed on a first side of the substrate, and each of the control signal pins is disposed on a second side of the substrate, with the first side and the second side being disposed opposite to each other.
5. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module also includes at least one temperature detection pin, which is used to connect a temperature detection element to detect the temperature of the power semiconductor module.
6. The power semiconductor module according to claim 5, characterized in that, The temperature sensing element is disposed on the substrate and electrically connected to the corresponding temperature sensing pin.
7. A driving circuit for a power semiconductor module, characterized in that, The driving circuit of the power semiconductor module is applied to the power semiconductor module as described in any one of claims 1-6, and the driving circuit includes: a plurality of control signal generation modules equal in number to the power semiconductor devices of the power semiconductor module; Each of the power semiconductor devices has its control terminal connected to a control signal generation module via a control signal pin. Each of the power semiconductor devices is driven independently by its corresponding control signal generation module.
8. The driving circuit of the power semiconductor module according to claim 7, characterized in that, The driving circuit of the power semiconductor module further includes a current detection module, which is electrically connected to the power semiconductor module and is used to detect the current of the power semiconductor module in real time.
9. The driving circuit of the power semiconductor module according to claim 7, characterized in that, The driving circuit of the power semiconductor module also includes two power signal generation modules; The first power signal generation module is used to be electrically connected to the first power semiconductor device of each of the power semiconductor device groups, and to provide a power signal to each of the first power semiconductor devices; The second power signal generation module is electrically connected to the second power semiconductor device of each of the power semiconductor device groups to provide a power signal to each of the second power semiconductor devices.
10. An electronic device, characterized in that, The electronic device includes: a power semiconductor module as described in any one of claims 1-6 or a driving circuit for a power semiconductor module as described in any one of claims 7-9.