A flexible plasma-assisted atomic layer deposition apparatus
By using a flexible plasma-assisted atomic layer deposition apparatus, employing CCEP mild plasma and an elastic limiting mechanism, the problems of damage to two-dimensional boron nitride films and cumbersome disassembly and assembly of take-up rollers in existing devices have been solved, thereby improving film quality and processing efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- XIAOKRLI (SUZHOU) SEMICONDUCTOR TECHNOLOGY CO LTD
- Filing Date
- 2025-06-05
- Publication Date
- 2026-05-29
AI Technical Summary
Existing atomic layer deposition equipment is prone to damaging two-dimensional boron nitride films during plasma coating, and the disassembly and assembly of the take-up roller is cumbersome, affecting processing efficiency.
A flexible plasma-assisted atomic layer deposition device is used, employing CCEP mild plasma for deposition processing. The assembly and disassembly process of the take-up roller is simplified through an elastic limiting mechanism and a transmission mechanism, and an inert gas storage chamber is set up to ensure gas cleaning effect.
It improves the quality of two-dimensional boron nitride films, reduces the risk of film damage, simplifies the replacement process of the take-up roller, improves processing efficiency, and ensures the cleaning effect of inert gas.
Smart Images

Figure CN224299349U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of two-dimensional boron nitride thin film strengthening processing technology, specifically a flexible plasma-assisted atomic layer deposition device. Background Technology
[0002] Two-dimensional boron nitride (BN) is a material with unique physical and chemical properties, widely used in electronics, optoelectronics, and nanotechnology. It is a single-atom-layer structure formed by nitrogen and boron atoms through covalent bonds, similar to the layered structure of graphene. To improve the quality of BN thin films during processing, atomic layer deposition (ALD) devices are used for coating. However, current ALD devices still have the following shortcomings:
[0003] The plasma commonly used in existing atomic layer deposition (ALD) equipment during plasma coating can easily damage two-dimensional boron nitride (BN) films, thus interfering with subsequent processing and use. In addition, the disassembly and assembly procedures of the take-up rollers in existing ALD equipment are relatively cumbersome, requiring workers to spend a long time replacing them, which in turn affects the processing efficiency of the workers. Utility Model Content
[0004] The purpose of this invention is to provide a flexible plasma-assisted atomic layer deposition device to solve the problems mentioned in the background art.
[0005] To achieve the above objectives, this utility model provides the following technical solution: a flexible plasma-assisted atomic layer deposition (ALD) device, comprising an ALD deposition chamber, a transmission mechanism, and a gas injection mechanism. The ALD deposition chamber is symmetrically and fixedly equipped with partition plates, the upper section of which has through holes. First sealing doors are symmetrically installed on the front and rear sides of the ALD deposition chamber. A feeding assembly is rotatably installed inside the ALD deposition chamber, and a receiving assembly is also rotatably installed inside the ALD deposition chamber. The transmission mechanism is installed on the back of the ALD deposition chamber, and symmetrically installed on the front side of the ALD deposition chamber... The atomic layer deposition (ALD) chamber is equipped with a second sealing door and an inert gas storage chamber is symmetrically fixedly installed on the back side. A first suction pump is fixedly installed on the top of the inert gas storage chamber, and a connecting pipe is fixedly connected to the side of the first suction pump. The gas injection mechanism is fixedly installed on the top inner surface of the ALD chamber, and a suction pipe is fixedly connected to the back of the ALD chamber. A second suction pump is fixedly installed at the end of the suction pipe, and the top of the second suction pump is fixedly connected to the bottom of the inert gas storage chamber. A flexible plasma atomic layer deposition (ALD) system is fixedly installed on the top inner surface of the ALD chamber.
[0006] Furthermore, the receiving assembly includes a connecting shaft, and an elastic limiting mechanism is installed inside the connecting shaft. A bearing column is fixedly connected to the end of the elastic limiting mechanism, and a limiting groove is opened at the end of the bearing column. At the same time, a bearing mechanism is movably installed at the end of the bearing column.
[0007] Furthermore, the end of the elastic limiting mechanism is fixedly connected to the inner surface of the connecting shaft, and the other end of the elastic limiting mechanism is fixedly connected to the end of the bearing column, and the bearing column forms an elastic structure with the connecting shaft through the elastic limiting mechanism.
[0008] Furthermore, the carrying mechanism includes a take-up roller, and a fixed column is fixedly connected through the inside of the take-up roller, and docking blocks are symmetrically fixedly installed at both ends of the fixed column.
[0009] Furthermore, the external dimensions of the docking block perfectly match the internal dimensions of the limiting groove, and the docking block forms a locking structure with the bearing column through the limiting groove.
[0010] Furthermore, the transmission mechanism includes a drive motor, and the output shaft of the drive motor is mounted with a transmission shaft via a coupling. A connecting gear is fixedly connected to the outer surface of the transmission shaft, and a transmission belt is meshed with the outer surface of the connecting gear.
[0011] Furthermore, there are two drive shafts, and the ends of the two drive shafts are respectively fixedly connected to the ends of the feeding assembly and the receiving assembly.
[0012] Furthermore, the air injection mechanism includes a hollow connecting plate, and connecting columns are symmetrically fixedly installed on the top of the hollow connecting plate, and air injection nozzles are symmetrically installed on the bottom of the hollow connecting plate. A three-way pipe is fixedly connected to the top of the hollow connecting plate, and the other end of the three-way pipe is fixedly connected to the side of the first air pump.
[0013] Furthermore, the bottom of the connecting column is fixedly connected to the top of the hollow connecting plate, and the top of the connecting column is fixedly connected to the top inner surface of the atomic layer deposition coating chamber. The hollow connecting plate and the atomic layer deposition coating chamber form a fixed structure through the connecting column.
[0014] This invention provides a flexible plasma-assisted atomic layer deposition device, which has the following advantages:
[0015] 1. This utility model uses CCEP mild plasma for atomic deposition processing. Since CCEP mild plasma is a flexible plasma, the device improves the utilization rate of the gas source during deposition processing and also significantly reduces damage to the film, thereby improving the quality of the two-dimensional boron nitride film.
[0016] 2. This utility model, through its elastic limiting mechanism, allows the bearing column to automatically move inward toward the connecting shaft when the operator presses it against one end of the bearing mechanism. This facilitates the operator's engagement of the docking block at the other end. Furthermore, since the external dimensions of the docking block perfectly match the internal dimensions of the limiting groove, the operator can quickly engage the docking block and the bearing column. This also facilitates the operator's disassembly and assembly of the receiving component. Additionally, since the components of the feeding component and the receiving component are identical, the feeding component can also be quickly disassembled and assembled by the operator. This avoids situations where the operator needs to spend a long time changing the winding roller, which would interfere with the operator's processing efficiency.
[0017] 3. This utility model, through the connection gears and transmission belts, enables the drive motor to drive the two transmission shafts to rotate synchronously during operation. This allows the feeding and receiving components to move synchronously as well, ensuring that the feeding and receiving components do not cause excessive stretching of the film during roll-to-roll film transport. This prevents the film from breaking during film transport. Simultaneously, the two sets of inert gas storage chambers allow for the alternating use of inert gas, providing sufficient purification time and ensuring that the inert gas supplied to the atomic layer deposition coating chamber does not carry precursor molecules, thus ensuring the effective cleaning of the chamber by the inert gas. Attached Figure Description
[0018] Figure 1 This is a frontal three-dimensional structural diagram of a flexible plasma-assisted atomic layer deposition device according to the present invention;
[0019] Figure 2 This is a rear-view three-dimensional structural diagram of a flexible plasma-assisted atomic layer deposition device according to the present invention;
[0020] Figure 3 This invention relates to a flexible plasma-assisted atomic layer deposition device. Figure 2 Enlarged schematic diagram of the structure at point A in the middle;
[0021] Figure 4 This is a schematic diagram of the open structure of a flexible plasma-assisted atomic layer deposition device according to the present invention;
[0022] Figure 5 This is a three-dimensional structural diagram of the connecting shaft-bearing mechanism of a flexible plasma-assisted atomic layer deposition device according to the present invention;
[0023] Figure 6This is a three-dimensional structural diagram of the hollow connecting plate-flexible plasma atomic layer deposition system of a flexible plasma-assisted atomic layer deposition device according to the present invention.
[0024] Figure 7 This is a three-dimensional structural diagram of the inert gas storage chamber and the first pump of a flexible plasma-assisted atomic layer deposition device according to the present invention.
[0025] In the diagram: 1. Atomic layer deposition coating chamber; 2. Separator plate; 3. Through hole; 4. First sealing door; 5. Feeding assembly; 6. Receiving assembly; 61. Connecting shaft; 62. Elastic limiting mechanism; 63. Support column; 64. Limiting groove; 65. Supporting mechanism; 651. Rewinding roller; 652. Fixed column; 653. Connecting block; 7. Transmission mechanism; 71. Drive motor; 72. Transmission shaft; 73. Connecting gear; 74. Transmission belt; 8. Second sealing door; 9. Inert gas storage chamber; 10. First vacuum pump; 11. Connecting pipe; 12. Gas injection mechanism; 121. Hollow connecting plate; 122. Connecting column; 123. Gas injection nozzle; 124. T-pipe; 13. Second vacuum pump; 14. Vacuum pipe; 15. Flexible plasma atomic layer deposition system. Detailed Implementation
[0026] The embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of this utility model.
[0027] like Figures 1-7As shown, a flexible plasma-assisted atomic layer deposition (ALD) apparatus includes an ALD deposition chamber 1, a transmission mechanism 7, and a gas injection mechanism 12. A partition plate 2 is symmetrically fixedly installed inside the ALD deposition chamber 1, and a through hole 3 is provided in the upper section of the partition plate 2. First sealing doors 4 are symmetrically installed on the front and rear sides of the ALD deposition chamber 1. A feeding assembly 5 is rotatably installed inside the ALD deposition chamber 1, and a receiving assembly 6 is rotatably installed inside the ALD deposition chamber 1. The receiving assembly 6 includes a connecting shaft 61, and an elastic limiting mechanism 62 is installed inside the connecting shaft 61. A bearing column 63 is fixedly connected to the end of the elastic limiting mechanism 62, and the end of the elastic limiting mechanism 62 is flush with the inner surface of the connecting shaft 61. The support column 63 is fixedly connected to the other end of the elastic limiting mechanism 62, and the support column 63 forms an elastic structure with the connecting shaft 61 through the elastic limiting mechanism 62. By configuring the support column 63 and connecting shaft 61 as an elastic structure, the support column 63 can automatically move towards the interior of the connecting shaft 61 when the worker squeezes one end of the support column 63 through the support mechanism 65. A limiting groove 64 is provided at the end of the support column 63, and the support mechanism 65 is movably installed at the end of the support column 63. The support mechanism 65 includes a take-up roller 651, and a fixed column 652 is fixedly connected through the inside of the take-up roller 651. A mating block 653 is symmetrically fixedly installed at both ends of the fixed column 652. The external dimensions of the mating block 653 perfectly match the internal dimensions of the limiting groove 64, and the mating block 653 forms a locking structure with the bearing column 63 through the limiting groove 64. By setting the mating block 653 and the bearing column 63 into a locking structure, the mating block 653 can easily be inserted into the interior of the bearing column 63 to complete the quick installation work. The transmission mechanism 7 is installed on the back of the atomic layer deposition coating tank 1. The transmission mechanism 7 includes a drive motor 71, and the output shaft of the drive motor 71 is mounted with a transmission shaft 72 through a coupling. There are two transmission shafts 72. The ends of the two transmission shafts 72 are fixedly connected to the ends of the feeding assembly 5 and the receiving assembly 6, respectively. A connecting gear 73 is fixedly connected to the outer surface of the transmission shaft 72, and the outer surface of the connecting gear 73 meshes with the outer surface of the transmission shaft 72. A drive belt 74 is connected to the atomic layer deposition (ALD) tank 1. A second sealing door 8 is symmetrically installed on the front side of the ALD tank 1. An inert gas storage tank 9 is symmetrically fixedly installed on the back side of the ALD tank 1. A first suction pump 10 is fixedly installed on the top of the inert gas storage tank 9, and a connecting pipe 11 is fixedly connected to the side of the first suction pump 10. A gas injection mechanism 12 is fixedly installed on the inner top surface of the ALD tank 1. The gas injection mechanism 12 includes a hollow connecting plate 121, and connecting columns 122 are symmetrically fixedly installed on the top of the hollow connecting plate 121. The bottom of the connecting columns 122 is fixedly connected to the top of the hollow connecting plate 121, and the top of the connecting columns 122 is fixedly connected to the inner top surface of the ALD tank 1.Furthermore, the hollow connecting plate 121 forms a fixed structure with the atomic layer deposition (ALD) tank 1 via the connecting column 122. This fixed structure ensures that the hollow connecting plate 121 will not loosen when carrying inert gas. Gas injection nozzles 123 are symmetrically installed at the bottom of the hollow connecting plate 121, and a three-way pipe 124 is fixedly connected to the top of the hollow connecting plate 121. The other end of the three-way pipe 124 is fixedly connected to the side of the first suction pump 10. A suction pipe 14 is fixedly connected to the back of the ALD tank 1, and a second suction pump 13 is fixedly installed at the end of the suction pipe 14. The top of the second suction pump 13 is fixedly connected to the bottom of the inert gas storage tank 9. A flexible plasma atomic layer deposition (ALD) system 15 is fixedly installed on the inner top surface of the ALD tank 1.
[0028] The operation steps are as follows:
[0029] S1. Loading process: The staff opens the first sealing door 4, and then installs the feeding assembly 5, which carries the two-dimensional boron nitride film to be coated, into the atomic layer deposition coating chamber 1. Then, the two-dimensional boron nitride film passes through the through hole 3 and enters the coating chamber. Then, it passes through the partition plate 2 on the right side and is fixed to the outer surface of the take-up roller 651. After the two-dimensional boron nitride film is fixed, the first sealing door 4 and the second sealing door 8 are both closed and the interior of the atomic layer deposition coating chamber 1 is evacuated to a vacuum state.
[0030] S2, Coating treatment: Next, the staff turns on the flexible plasma atomic layer deposition system 15 through remote control, so that the flexible plasma atomic layer deposition system 15 automatically attaches CCEP mild plasma to the surface of the two-dimensional boron nitride film during operation, thereby performing atomic layer deposition treatment on the two-dimensional boron nitride film.
[0031] S3. First cleaning: When the atomic deposition time of the two-dimensional boron nitride thin film in the chamber reaches the set value, the flexible plasma atomic layer deposition system 15 is turned off and the first air pump 10 at the top of the left inert gas storage chamber 9 is turned on. When the first air pump 10 starts running, the inert gas in the inert gas storage chamber 9 is transported into the interior of the hollow connecting plate 121 through the cooperation of the connecting pipe 11 and the three-way pipe 124. Then, the inert gas is evenly sprayed out through the gas injection nozzle 123, thereby achieving the purpose of cleaning the chamber and removing unreacted precursor molecules in the chamber.
[0032] S4. Secondary deposition: After the cleaning of the chamber is completed, the second air pump 13 at the bottom of the corresponding inert gas storage chamber 9 is opened, so that the air pump pipe 14 extracts the inert gas in the atomic layer deposition coating chamber 1 to ensure the cleanliness of the chamber. Then, the flexible plasma atomic layer deposition system 15 is remotely opened for secondary deposition coating treatment.
[0033] S5. Secondary cleaning: When the atomic deposition time of the two-dimensional boron nitride thin film in the chamber reaches the set value, the flexible plasma atomic layer deposition system 15 is turned off and the first air pump 10 at the top of the right inert gas storage chamber 9 is turned on, so that the inert gas in the right inert gas storage chamber 9 is injected into the interior of the atomic layer deposition coating chamber 1 for secondary cleaning, so as to remove unreacted precursor molecules in the chamber, thereby achieving the purpose of layer-by-layer deposition of thin films.
[0034] S6. Roll-to-roll conveying: After the two-dimensional boron nitride film in the coating chamber is coated, the drive motor 71 is turned on. When the drive motor 71 starts running, the two drive shafts 72 drive the feeding assembly 5 and the receiving assembly 6 to rotate synchronously inside the atomic layer deposition coating chamber 1 through the cooperation of the connecting gear 73 and the transmission belt 74. This allows the coated two-dimensional boron nitride film to be automatically wound onto the outer surface of the carrying mechanism 65. At the same time, the unprocessed two-dimensional boron nitride film is conveyed from the outer surface of the feeding assembly 5 to the coating chamber for coating treatment, thereby achieving the purpose of intermittent processing.
[0035] S7. Unloading process: After all the two-dimensional boron nitride films have been coated, the staff opens the first sealing door 4, then grasps the bearing mechanism 65 and pushes it towards the connecting shaft 61 at one end, so that the bearing column 63 pushes the elastic limiting mechanism 62 towards the inside of the connecting shaft 61, thereby causing the docking block 653 at the other end to move out of the limiting groove 64 at the end of the bearing column 63 at the other end, so as to achieve the purpose of quickly disassembling the receiving component 6. Similarly, when installing the discharging component 5 and the receiving component 6, the installation work can be quickly completed by pressing the bearing column 63 at one end.
[0036] The embodiments of this utility model are given for illustrative and descriptive purposes only, and are not intended to be exhaustive or to limit the utility model to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described in order to better illustrate the principles and practical applications of this utility model, and to enable those skilled in the art to understand this utility model and design various embodiments with various modifications suitable for a particular purpose.
Claims
1. A flexible plasma-assisted atomic layer deposition apparatus, comprising an atomic layer deposition coating chamber (1), a transmission mechanism (7), and a gas injection mechanism (12), characterized in that, The atomic layer deposition coating chamber (1) is symmetrically fixedly equipped with partition plates (2), and the upper section of the partition plates (2) is provided with through holes (3). The atomic layer deposition coating chamber (1) is symmetrically equipped with first sealing doors (4) on the front and rear sides. The atomic layer deposition coating chamber (1) is rotatably equipped with a feeding assembly (5) and a receiving assembly (6). The transmission mechanism (7) is installed on the back of the atomic layer deposition coating chamber (1). The atomic layer deposition coating chamber (1) is symmetrically equipped with second sealing doors (8) on the front side. The atomic layer deposition coating chamber (1) is symmetrically fixedly equipped with inert gas storage chambers on the back side. (9), and a first suction pump (10) is fixedly installed on the top of the inert gas storage chamber (9), and a connecting pipe (11) is fixedly connected to the side of the first suction pump (10). The gas injection mechanism (12) is fixedly installed on the top inner surface of the atomic layer deposition coating chamber (1), and a suction pipe (14) is fixedly connected to the back of the atomic layer deposition coating chamber (1). A second suction pump (13) is fixedly installed at the end of the suction pipe (14), and the top of the second suction pump (13) is fixedly connected to the bottom of the inert gas storage chamber (9). A flexible plasma atomic layer deposition system (15) is fixedly installed on the top inner surface of the atomic layer deposition coating chamber (1).
2. The flexible plasma-assisted atomic layer deposition apparatus according to claim 1, characterized in that, The receiving assembly (6) includes a connecting shaft (61), and an elastic limiting mechanism (62) is installed inside the connecting shaft (61). A bearing column (63) is fixedly connected to the end of the elastic limiting mechanism (62), and a limiting groove (64) is opened at the end of the bearing column (63). Meanwhile, a bearing mechanism (65) is movably installed at the end of the bearing column (63).
3. The flexible plasma-assisted atomic layer deposition apparatus according to claim 2, characterized in that, The end of the elastic limiting mechanism (62) is fixedly connected to the inner surface of the connecting shaft (61), and the other end of the elastic limiting mechanism (62) is fixedly connected to the end of the bearing column (63). The bearing column (63) forms an elastic structure with the connecting shaft (61) through the elastic limiting mechanism (62).
4. The flexible plasma-assisted atomic layer deposition apparatus according to claim 2, characterized in that, The carrying mechanism (65) includes a take-up roller (651), and a fixed column (652) is fixedly connected through the inside of the take-up roller (651), and docking blocks (653) are symmetrically fixedly installed at both ends of the fixed column (652).
5. The flexible plasma-assisted atomic layer deposition apparatus according to claim 4, characterized in that, The external dimensions of the docking block (653) are completely matched with the internal dimensions of the limiting groove (64), and the docking block (653) and the bearing column (63) form a locking structure through the limiting groove (64).
6. The flexible plasma-assisted atomic layer deposition apparatus according to claim 1, characterized in that, The transmission mechanism (7) includes a drive motor (71), and the output shaft of the drive motor (71) is mounted with a transmission shaft (72) via a coupling. A connecting gear (73) is fixedly connected to the outer surface of the transmission shaft (72), and a transmission belt (74) is meshed with the outer surface of the connecting gear (73).
7. The flexible plasma-assisted atomic layer deposition apparatus according to claim 6, characterized in that, There are two drive shafts (72), and the ends of the two drive shafts (72) are fixedly connected to the ends of the feeding assembly (5) and the receiving assembly (6), respectively.
8. The flexible plasma-assisted atomic layer deposition apparatus according to claim 1, characterized in that, The air injection mechanism (12) includes a hollow connecting plate (121), and connecting columns (122) are symmetrically fixedly installed on the top of the hollow connecting plate (121), and air injection nozzles (123) are symmetrically installed on the bottom of the hollow connecting plate (121). A three-way pipe (124) is fixedly connected to the top of the hollow connecting plate (121), and the other end of the three-way pipe (124) is fixedly connected to the side of the first air pump (10).
9. A flexible plasma-assisted atomic layer deposition apparatus according to claim 8, characterized in that, The bottom of the connecting column (122) is fixedly connected to the top of the hollow connecting plate (121), and the top of the connecting column (122) is fixedly connected to the inner surface of the top of the atomic layer deposition coating tank (1). The hollow connecting plate (121) and the atomic layer deposition coating tank (1) form a fixed structure through the connecting column (122).