Deposition apparatus and deposition device
By adding a deposition plate and heating elements to the deposition apparatus to preheat the process gas, the problem of process gas condensation and blockage was solved, and the uniformity of the deposited film was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FOREHOPE SEMICONDUCTOR (NINGBO) CO LTD
- Filing Date
- 2025-07-04
- Publication Date
- 2026-07-07
AI Technical Summary
In existing deposition equipment, the process gas condenses and blocks the pores, resulting in uneven film thickness on the substrate surface and affecting the deposition effect.
A deposition plate and a heating element are added to the deposition apparatus. The heating element preheats the incoming process gas to prevent condensation and blockage, and improves the uniformity of film thickness.
It effectively prevents process gas condensation and blockage, improves the uniformity of the deposited film thickness, and ensures the deposition effect.
Smart Images
Figure CN224467911U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of deposition technology, and more specifically, to a deposition apparatus and deposition equipment. Background Technology
[0002] Chemical vapor deposition is a chemical technology commonly used in the semiconductor field. This chemical technology mainly uses one or more gaseous compounds or elements containing thin film elements for deposition. Each precursor will saturate the substrate surface to form an atomic layer, thus depositing a thin film or coating. Finally, a chemical reaction is carried out on the substrate surface to generate a thin film.
[0003] Currently, after the precursor enters the pores, it will further cool down and condense due to the high flow rate and low pressure. The condensed gas will block the pores, resulting in a lower film thickness at the corresponding position on the substrate, while the film thickness at the corresponding position of the unblocked pores will be higher. This will lead to uneven film thickness on the substrate surface. Utility Model Content
[0004] The purpose of this invention is to provide a deposition apparatus and deposition equipment that can avoid pore blockage caused by cooling and condensation, and improve the uniformity of the deposited film thickness.
[0005] The embodiments of this utility model are implemented as follows:
[0006] In one aspect, embodiments of the present invention provide a deposition apparatus and a deposition device, comprising:
[0007] A support cover plate, which covers the opening of the process chamber;
[0008] A boss is provided on the bearing cover plate, and the boss is assembled at the opening;
[0009] A deposition disk is disposed on the protrusion, and the deposition disk is provided with a deposition guide hole communicating with the process chamber;
[0010] A nozzle structure disposed in the boss, the nozzle structure corresponding to the deposition guide hole, is configured to inject process gas into the process chamber through the deposition guide hole;
[0011] A heating element, disposed in a boss and on the nozzle structure, is configured to heat the process gas entering the deposition guide hole.
[0012] In an optional embodiment, there are two deposition disks and two heating elements. The nozzle structure includes multiple first nozzles and multiple second nozzles. The boss is provided with a first receiving groove and a second receiving groove spaced apart. The multiple first nozzles are disposed in the first receiving groove, and the multiple second nozzles are disposed in the second receiving groove. The two deposition disks are respectively disposed in the first receiving groove and the second receiving groove. The two heating elements are distributed corresponding to the two deposition disks and are respectively disposed in the first receiving groove and the second receiving groove. The first nozzles and the second nozzles are configured to inject different process gases.
[0013] In an optional embodiment, the heating element is disc-shaped and has a plurality of clearance holes, which correspond to a plurality of first nozzles or a plurality of second nozzles.
[0014] In an optional embodiment, each of the first nozzles and the second nozzles is further provided with a support step at its root, the size of which is larger than the size of the corresponding clearance hole, and the support step is configured to support the heating element and the deposition plate.
[0015] In an optional embodiment, both the first and second receiving grooves are circular grooves, and the plurality of first nozzles are radially divergently distributed, as are the plurality of second nozzles.
[0016] In an optional embodiment, the boss is further provided with a plurality of heat dissipation grooves, which are evenly distributed between the first receiving groove and the second receiving groove.
[0017] In an optional embodiment, each of the heat dissipation slots extends through the boss and is oval in shape.
[0018] In an optional embodiment, each of the deposition disks is further provided with a mixing chamber, the deposition guide hole being connected to the mixing chamber, and the mixing chamber being configured to communicate with the process chamber.
[0019] In an optional embodiment, the size of the boss is smaller than the size of the bearing cover plate, the edge of the bearing cover plate is spaced apart from the edge of the boss, and the edge of the bearing cover plate is also provided with a pressure relief groove, which passes through the bearing cover plate.
[0020] In another embodiment of the present invention, a deposition apparatus is provided, including a process chamber and the aforementioned deposition device, wherein the process chamber has an opening, a support cover plate covers the opening, and a boss extends into and is fitted into the opening.
[0021] The beneficial effects of this utility model embodiment include:
[0022] The deposition apparatus and equipment provided in this embodiment of the invention have a supporting cover plate placed over the opening of the process chamber. A boss is provided on the supporting cover plate and assembled at the opening. A deposition disk is placed on the boss, and a deposition guide hole communicating with the process chamber is provided on the deposition disk. A nozzle structure is disposed in the boss, corresponding to the deposition guide hole, thereby allowing process gas to be injected into the process chamber through the deposition guide hole. A heating element is disposed in the boss and on the nozzle structure, capable of heating the process gas entering the deposition guide hole. Compared to the prior art, this embodiment of the invention, by adding a deposition disk and a heating element, allows the heating element to preheat the gas flowing into the deposition guide hole, thereby preventing the formation of cooling substances at the front end of the process gas, which could lead to blockage of the deposition guide hole. This avoids pore blockage caused by cooling and condensation, and improves the uniformity of the deposited film thickness. Attached Figure Description
[0023] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1 A schematic diagram of the deposition apparatus provided in an embodiment of this utility model;
[0025] Figure 2 An exploded view of the deposition apparatus provided in an embodiment of this utility model;
[0026] Figure 3 for Figure 2 A structural diagram of the boss in the middle from a first-view perspective;
[0027] Figure 4 for Figure 2 A schematic diagram of the boss in the middle from a second perspective.
[0028] icon:
[0029] 100-Deposition device; 110-Supporting cover plate; 120-Boss; 121-First receiving tank; 122-Second receiving tank; 130-Deposition plate; 131-Deposition guide hole; 140-Nozzle structure; 141-First nozzle; 142-Second nozzle; 143-Supporting step; 150-Heating element; 151-Avoiding hole; 160-Heat dissipation groove; 170-Pressure relief groove. Detailed Implementation
[0030] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0032] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0034] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0035] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0036] As disclosed in the background art, existing deposition apparatuses typically use vents to introduce process gases. However, as the precursor enters the vents, the flow rate is high and the pressure is low, which causes it to cool down and condense. This can block the vents, resulting in a reduced flow rate and consequently, a lower film thickness at the corresponding location on the substrate. This leads to uneven film thickness on the substrate surface and affects the deposition effect.
[0037] Furthermore, existing deposition devices typically use a single flow channel, where different process gases flow in through the same channel. When mixing different process gases is required, they must be mixed before being introduced. For some special processes, this can easily lead to reactions within the pipe, causing pipe blockage or reducing the effective components entering the process chamber, which also affects the subsequent deposition effect.
[0038] To address the aforementioned problems, this utility model provides a deposition apparatus and deposition device. The specific structure and working principle of the deposition apparatus will be described in detail below.
[0039] See Figures 1 to 4 This utility model provides a deposition apparatus 100 that can preheat process gases, thereby avoiding pore blockage caused by cooling and condensation, improving the uniformity of the deposited film thickness, and ensuring the deposition effect. Simultaneously, the deposition apparatus 100 can achieve back-end mixing of different process gases, realizing gas mixing within the process chamber, avoiding the problems caused by mixing before introducing the gases into the process chamber.
[0040] This utility model embodiment provides a deposition apparatus 100, which includes a support cover plate 110, a boss 120, a deposition disk 130, a nozzle structure 140, and a heating element 150. The support cover plate 110 covers the opening of the process chamber; the boss 120 is disposed on the support cover plate 110 and can be assembled at the opening; the deposition disk 130 is disposed on the boss 120 and has a deposition guide hole 131 communicating with the process chamber; the nozzle structure 140 is disposed in the boss 120 and corresponds to the deposition guide hole 131, and is configured to inject process gas into the process chamber through the deposition guide hole 131; the heating element 150 is disposed in the boss 120 and on the nozzle structure 140, and is configured to heat the process gas entering the deposition guide hole 131.
[0041] It should be noted that the basic structure and working principle of the process chamber here can refer to a conventional deposition chamber. The support cover plate 110 covers the opening of the process chamber, the boss 120 can be installed and extend into the opening, and the deposition plate 130 is exposed in the process chamber. The nozzle structure 140 is set in the boss 120 and connected to the external gas pipe, so that process gas can be injected into the process chamber through the deposition guide hole 131. The heating element 150 is set in the boss 120 and powered by a wire or a power source in the boss 120. The heating element 150 can preheat the process gas entering the deposition guide hole 131. Therefore, by adding the deposition plate 130 and the heating element 150, this embodiment of the present invention can preheat the gas flowing into the deposition guide hole 131, thereby preventing the formation of cooling material at the front end of the process gas and causing blockage of the deposition guide hole 131, avoiding the phenomenon of pore blockage caused by cooling and condensation, and improving the uniformity of the deposited film thickness.
[0042] In some embodiments, there are two deposition disks 130 and two heating elements 150. The nozzle structure 140 includes a plurality of first nozzles 141 and a plurality of second nozzles 142. The boss 120 is provided with a first receiving groove 121 and a second receiving groove 122 spaced apart. The plurality of first nozzles 141 are disposed in the first receiving groove 121, and the plurality of second nozzles 142 are disposed in the second receiving groove 122. The two deposition disks 130 are respectively disposed in the first receiving groove 121 and the second receiving groove 122. The two heating elements 150 are distributed corresponding to the two deposition disks 130 and are respectively disposed in the first receiving groove 121 and the second receiving groove 122. The first nozzles 141 and the second nozzles 142 are configured to inject different process gases. Specifically, the plurality of first nozzles 141 can be simultaneously connected to an external first gas pipe to realize the introduction of a first process gas; the plurality of second nozzles 142 can be simultaneously connected to an external second gas pipe to realize the introduction of a second process gas. Furthermore, the arrangement of the first receiving groove 121 and the second receiving groove 122 allows the two deposition disks 130 to be embedded into the first receiving groove 121 and the second receiving groove 122 respectively, thus avoiding the phenomenon of local air leakage caused by the protruding arrangement of the deposition disks 130.
[0043] Furthermore, the heating element 150 is disc-shaped and has multiple clearance holes 151, which correspond to multiple first nozzles 141 or multiple second nozzles 142. Specifically, the heating element 150 can be a resistance heating structure that generates heat when energized. The first nozzles 141 or second nozzles 142 can pass through the clearance holes 151, allowing the heating element 150 to be arranged in a ring around the first nozzles 141 or second nozzles 142, achieving peripheral heating. Moreover, since the heating element 150 is also located within the first receiving groove 121 or second receiving groove 122, heating can be achieved in a relatively enclosed environment, allowing heat to be transferred to the first nozzles 141 or second nozzles 142 more quickly, thus achieving better preheating.
[0044] It should be noted that the heating element 150 and the nozzle are heated by heat conduction. When the first nozzle 141 or the second nozzle 142 is heated, the process gas passing through the nozzle is preheated, avoiding the pore blockage caused by cooling and condensation in conventional processes.
[0045] In some embodiments, a support step 143 is further provided at the root of each first nozzle 141 and second nozzle 142. The size of the support step 143 is larger than the size of the corresponding clearance hole 151. The support step 143 is configured to support the heating element 150 and the deposition plate 130. Specifically, the support step 143 can support the heating element 150 and ensure that the heating element 150 is in contact with the support step 143, thereby better realizing heat transfer.
[0046] In some embodiments, both the first receiving groove 121 and the second receiving groove 122 are circular grooves, and the plurality of first nozzles 141 are radially divergently distributed, as are the plurality of second nozzles 142. Specifically, the distribution pattern of the plurality of first nozzles 141 is the same as the distribution pattern of the plurality of second nozzles 142, while the distribution pattern of the clearance holes 151 on the heating element 150 is adapted to the distribution pattern of the first nozzles 141 or the second nozzles 142.
[0047] In some embodiments, the boss 120 is further provided with a plurality of heat dissipation grooves 160, which are evenly distributed between the first receiving groove 121 and the second receiving groove 122. Specifically, the provision of a plurality of heat dissipation grooves 160 can significantly increase the surface area of the boss 120, thereby increasing the cooling speed after the support cover plate 110 is opened, so that the boss 120 can cool down quickly.
[0048] Furthermore, each heat dissipation groove 160 penetrates the boss 120 and is oval in shape. Specifically, the bottom wall of each heat dissipation groove 160 is a supporting cover plate 110, and the long axis of the oval shape is parallel to the direction of the line connecting the centers of the first receiving groove 121 and the second receiving groove 122, thereby enabling the arrangement of more heat dissipation grooves 160. Of course, in other preferred embodiments of this utility model, the heat dissipation groove 160 may also be other shapes, such as rectangular or rhomboid, etc., which are not specifically limited here.
[0049] In some embodiments, each deposition disk 130 is further provided with a mixing chamber (not shown), and deposition guide holes 131 are connected to the mixing chamber, which is configured to communicate with the process chamber. Specifically, the mixing chamber can play a role in mixing or diluting, so that the process gas parameters that finally enter the process chamber meet the deposition requirements.
[0050] It is worth noting that the multiple deposition guide holes 131 are also distributed radially, and the ring of deposition guide holes 131 located at the edge can directly enter the process chamber without passing through the mixing chamber, thus separating the gas that needs to be mixed from the gas that does not need to be mixed.
[0051] In some embodiments, the size of the boss 120 is smaller than the size of the support cover plate 110. The edge of the support cover plate 110 is spaced apart from the edge of the boss 120, and the edge of the support cover plate 110 is also provided with a pressure relief groove 170 that penetrates through the support cover plate 110. Specifically, the pressure relief groove 170 can be a blind groove structure, located between the edge of the support cover plate 110 and the edge of the boss 120, thereby improving airflow when the support cover plate 110 is opened, which can break the seal and facilitate better opening of the support cover plate 110.
[0052] This utility model embodiment also provides a deposition apparatus, including a process chamber and the aforementioned deposition device 100. The deposition device 100 includes a support cover plate 110, a boss 120, a deposition disk 130, a nozzle structure 140, and a heating element 150. The boss 120 is disposed on the support cover plate 110, and the deposition disk 130 is disposed on the boss 120, with a deposition guide hole 131 communicating with the process chamber. The nozzle structure 140 is disposed in the boss 120 and corresponds to the deposition guide hole 131, configured to inject process gas into the process chamber through the deposition guide hole 131. The heating element 150 is disposed in the boss 120 and on the nozzle structure 140, configured to heat the process gas entering the deposition guide hole 131. The process chamber has an opening, the support cover plate 110 covers the opening, and the boss 120 extends into and is fitted at the opening.
[0053] In summary, the deposition apparatus 100 and deposition equipment provided in this embodiment of the present invention cover a bearing cover 110 over the opening of the process chamber, and a boss 120 is provided on the bearing cover 110. The boss 120 is assembled at the opening, and a deposition disk 130 is provided on the boss 120. The deposition disk 130 is provided with a deposition guide hole 131 communicating with the process chamber, and a nozzle structure 140 is provided in the boss 120. The nozzle structure 140 corresponds to the deposition guide hole 131, so that process gas can be injected into the process chamber through the deposition guide hole 131. The heating element 150 is provided in the boss 120 and on the nozzle structure 140, and can heat the process gas entering the deposition guide hole 131. Compared with the prior art, this utility model embodiment adds a deposition plate 130 and a heating element 150, so that the heating element 150 can preheat the gas flowing into the deposition guide hole 131, thereby preventing the process gas from forming cooling substances at the front end hole and causing blockage of the deposition guide hole 131, avoiding the phenomenon of pore blockage caused by cooling and condensation, and improving the uniformity of the film thickness of the deposited film.
[0054] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
Claims
1. A deposition apparatus, characterized in that, include: A support cover plate, which covers the opening of the process chamber; A boss is provided on the bearing cover plate, and the boss is assembled at the opening; A deposition disk is disposed on the protrusion, and the deposition disk is provided with a deposition guide hole communicating with the process chamber; A nozzle structure disposed in the boss, the nozzle structure corresponding to the deposition guide hole, is configured to inject process gas into the process chamber through the deposition guide hole; A heating element, disposed in a boss and on the nozzle structure, is configured to heat the process gas entering the deposition guide hole.
2. The deposition apparatus according to claim 1, characterized in that, There are two deposition disks and two heating elements. The nozzle structure includes multiple first nozzles and multiple second nozzles. The boss is provided with a first receiving groove and a second receiving groove spaced apart. The multiple first nozzles are disposed in the first receiving groove, and the multiple second nozzles are disposed in the second receiving groove. The two deposition disks are respectively disposed in the first receiving groove and the second receiving groove. The two heating elements are distributed corresponding to the two deposition disks and are respectively disposed in the first receiving groove and the second receiving groove. The first nozzles and the second nozzles are configured to inject different process gases.
3. The deposition apparatus according to claim 2, characterized in that, The heating element is disc-shaped and has multiple clearance holes, which correspond to multiple first nozzles or multiple second nozzles.
4. The deposition apparatus according to claim 3, characterized in that, Each of the first nozzles and the second nozzles is further provided with a bearing step at its root. The size of the bearing step is larger than the size of the corresponding clearance hole. The bearing step is configured to support the heating element and the deposition plate.
5. The deposition apparatus according to claim 2, characterized in that, Both the first and second receiving grooves are circular grooves, and the plurality of first nozzles are distributed radially in a divergent manner, as are the plurality of second nozzles.
6. The deposition apparatus according to claim 2, characterized in that, The protrusion is also provided with a plurality of heat dissipation slots, which are evenly distributed between the first receiving slot and the second receiving slot.
7. The deposition apparatus according to claim 6, characterized in that, Each of the heat dissipation slots extends through the boss and is oval in shape.
8. The deposition apparatus according to claim 2, characterized in that, Each of the deposition disks is further provided with a mixing chamber, and the deposition guide hole is connected to the mixing chamber, which is configured to communicate with the process chamber.
9. The deposition apparatus according to claim 1, characterized in that, The size of the boss is smaller than the size of the bearing cover plate. The edge of the bearing cover plate is spaced apart from the edge of the boss. The edge of the bearing cover plate is also provided with a pressure relief groove, which passes through the bearing cover plate.
10. A deposition apparatus, characterized in that, The device includes a process chamber and a deposition apparatus as described in any one of claims 1-9, wherein the process chamber has an opening, the support cover plate covers the opening, and the boss extends into and is fitted into the opening.